KR20150124210A - Display device and the method of repairing thereof - Google Patents

Abstract

According to an embodiment of the present invention, a display device comprises: a thin film transistor including an oxide semiconductor layer, a gate electrode, a source electrode, and a drain electrode; a pixel electrode connected to the thin film transistor; a gate line including a plurality of gate repair lines which are formed adjacent to the thin film transistor; and a data line including a plurality of data repair lines which are formed adjacent to the thin film transistor. According to the embodiment of the present invention, at least two gate repair lines among the gate repair lines crosses at least two data repair lines among the data repair lines, thereby solving a short-circuit defect of the gate line and the data line.

Description

[0001] DESCRIPTION [0002] DISPLAY DEVICE AND REPEIRING METHOD OF REPAIRING THEREOF [0003]

The present invention relates to a display device and a repair method thereof, and more particularly, to a display device and a repair method thereof capable of improving a short circuit failure between a data line and a gate line.

In general, an active matrix structure using a switching element such as a thin film transistor is used to drive pixels of a display device.

In recent years, interest in high image quality and 3D implementation has increased, and thin film transistors including an oxide semiconductor layer have been attracting attention. The thin film transistor including the oxide semiconductor layer is advantageous for low power consumption because it has high charge mobility and low leakage current compared to a thin film transistor including amorphous silicon (a-Si). In addition, it is also advantageous in improving cross-talk and flicker, thereby contributing to realization of high image quality and quick driving.

1. [Thin Film Transistor Liquid Crystal Display Device] (Patent Application No. 10-2009-0122951)

 Silicon nitride (SiNx) used as an insulating layer of a thin film transistor including a conventional amorphous silicon (a-Si) can be similarly applied to a thin film transistor including an oxide semiconductor layer. However, since silicon nitride (SiNx) has a high hydrogen content, the oxide semiconductor layer that is sensitive to hydrogen may be affected by device driving by silicon nitride (SiNx). That is, when hydrogen flows into the oxide semiconductor layer, the threshold voltage of the thin film transistor shifts, which makes normal element driving difficult. Therefore, when silicon nitride (SiNx) is applied as the upper or lower insulating layer of the oxide semiconductor layer, the thickness of the silicon nitride (SiNx) can be reduced to reduce the specific gravity of hydrogen flowing into the oxide semiconductor layer.

It is difficult to form silicon nitride (SiNx) having an excellent insulating property in a sufficient thickness in a thin film transistor including an oxide semiconductor layer. It is difficult to form a gate wiring formed of the same material as the gate electrode and a gate wiring formed of the same material as the source and drain electrodes The voltage of breakdown of the insulating layer located between the data lines is also lowered. In addition, since the oxide semiconductor layer has high conductivity compared to amorphous silicon (a-Si) and has a high affinity for conductive foreign matter generated during the deposition process, the density of the conductive foreign material around the oxide semiconductor layer is high. For this reason, short-circuit defects between the gate wiring and the data wiring due to a foreign matter or the like have occurred easily.

The inventors of the present invention have recognized such a problem and have come to realize a display device capable of improving a short circuit defect between a gate wiring and a data wiring by considering the structure of a gate wiring and a data wiring formed adjacent to the thin film transistor, .

A problem to be solved according to an embodiment of the present invention is to provide a display device capable of improving a short circuit defect between a gate wiring and a data wiring by forming a gate wiring and a data wiring which are formed adjacent to a thin film transistor so as to intersect with each other.

Another object of the present invention is to provide a method of repairing a display device capable of reducing a short circuit defect ratio between a gate wiring and a data wiring when a short circuit fault occurs in a gate wiring and a data wiring formed in multiple crossings .

The solutions according to one embodiment of the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

A display device according to an embodiment of the present invention includes a thin film transistor including an oxide semiconductor layer, a gate electrode, a source electrode and a drain electrode, and a pixel electrode connected to the thin film transistor. Further, it is composed of a gate wiring including a plurality of gate repair lines formed adjacent to the thin film transistor, and a data wiring including a plurality of data repair lines formed adjacent to the thin film transistor. The display device according to an embodiment of the present invention is characterized in that at least two of the plurality of gate repair lines intersect with at least two data repair lines of the plurality of data repair lines, And provides a display device capable of improving the display quality.

According to an embodiment of the present invention, the gate wiring and the data wiring formed adjacent to the thin film transistor are formed in multiple crossings, thereby improving the short circuit defect between the gate wiring and the data wiring.

Further, by providing a repair method of a display device capable of reducing the short-circuit defect ratio between the gate wiring and the data wiring, it is possible to reduce the defective rate of the display device and improve the yield.

The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description.

The scope of the claims is not limited by the matters described in the contents of the invention, as the contents of the invention described in the problems, the solutions to the problems and the effects to be solved do not specify essential features of the claims.

1 is a plan view showing a display device according to an embodiment of the present invention.
2 is an enlarged plan view showing the structure of the pixel A of FIG.
3 is a schematic cross-sectional view of a display device cut along a line B-B 'in FIG. 2, according to an embodiment of the present invention.
4A to 4D are plan views showing a repair method according to an embodiment of the present invention.
Fig. 5 is a table showing short-circuit defect rate due to foreign matter in one embodiment of the present invention and a comparative example.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail.

In the case where the word 'includes', 'having', 'done', etc. are used in this specification, other parts can be added unless '~ only' is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

In the case of a description of a temporal relationship, for example, if a temporal posterior relationship is described by 'after', 'after', 'after', 'before', etc., 'May not be contiguous unless it is used.

In the case of a description of the signal flow relationship, for example, even if 'signal is transmitted from node A to node B' And a case where a signal is transmitted to the B-node.

 The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, technically various interlocking and driving, and that the embodiments may be practiced independently of each other, It is possible.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT Hereinafter, a display device and a repair method according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a plan view showing a display device according to an embodiment of the present invention.

1, the display device includes a substrate 100 composed of a display area (DA) and a peripheral area (PA).

A plurality of pixels A including a thin film transistor TFT and a pixel electrode 160 are formed in the display area DA. A data driver unit DU and a gate driver unit (GU) for providing signals to the display area DA are formed in the peripheral area PA. More specifically, a plurality of gate lines 170 connected to the gate driver GU and a plurality of data lines 180 connected to the data driver DU are formed in a matrix to transmit signals to the pixels A.

The data driver DU may be a source driver IC or a flexible printed circuit (FPC) according to the structure of the display device. The gate driver GU may be a Gate Driver IC In Panel (GIP) Circuit (Gate Driver IC).

2 is an enlarged plan view showing the structure of the pixel A of FIG. More specifically, FIG. 1 is a plan view specifically showing a pixel A including a thin film transistor (TFT) and a pixel electrode 160 connected to a gate wiring 170 and a data wiring 180 in FIG.

The thin film transistor TFT is composed of a gate electrode 110, an oxide semiconductor layer 130, a source electrode 142, and a drain electrode 144.

The gate electrode 110, the source electrode 142, and the drain electrode 144 are formed of a conductive material. For example, any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) But it is not limited thereto and may be formed of various materials.

The pixel electrode 160 is connected to a thin film transistor (TFT) to receive a signal.

The pixel electrode 160 may be formed of a transparent conductive material such as ITO or IZO, or may be formed of an opaque conductive material such as a metal or a metal alloy.

The gate wiring 170 and the data wiring 180 are formed so as to cross each other and are connected to the thin film transistor TFT.

The gate wiring 170 includes a plurality of gate repair lines (GRL) formed adjacent to the thin film transistor TFT. 2, the gate wiring 170 includes a first gate repair line GRL1 and a second gate repair line GRL2, and includes a first gate repair line GRL1 and a second gate repair line GRL2. The repair line GRL2 is connected to the gate electrode 110 of the thin film transistor TFT. The same signal as the gate wiring 170 is transferred to the first gate repair line GRL1 and the second gate repair line GRL2 and the transferred signal is provided to the gate electrode 110 of the thin film transistor TFT .

The data line 180 includes a plurality of data repair lines (DRL) formed adjacent to the thin film transistor TFT. 2, the data line 180 includes a first data repair line DRL1 and a second data repair line DRL2, and a first data repair line DRL1 and a second data repair line DRL2. The repair line DRL2 is formed by branching from one data line 180. [ The same signal as the data line 180 is transferred to the first data repair line DRL1 and the second data repair line DRL2 and the source electrode 142 of the thin film transistor TFT is transferred to the second data repair line DRL2). The pixel electrode 160 is connected to the drain electrode 144 of the thin film transistor TFT. The second data repair line DRL2 disposed closest to the thin film transistor TFT among the plurality of data repair lines DRL1 and DRL2 is connected to the source electrode 142 of the thin film transistor TFT, The electrode 160 is connected to the drain electrode 144 which is not connected to the second data repair line DRL2 of the source electrode 142 and the drain electrode 144. [ 2, the source electrode 142 is connected to the second data repair line DRL2 and the drain electrode 144 is connected to the pixel electrode 160. However, depending on the type of the thin film transistor TFT, The first data repair line 144 may be connected to the second data repair line DRL2 and the source electrode 142 may be connected to the pixel electrode 160. [ Although not shown in FIG. 2, a plurality of gate repair lines GRL1 and GRL2 may also be branched in one gate wiring 170 according to the pixel design area.

The plurality of gate repair lines GRL1 and GRL2 and the plurality of data repair lines DRL1 and DRL2 are disposed adjacent to the thin film transistor TFT. Specifically, the thin film transistor TFT is disposed adjacent to a region where the gate wiring 170 and the data wiring 180 intersect with each other to facilitate connection with the gate wiring 170 and the data wiring 180. Therefore, the plurality of gate repair lines GRL1 and GRL2 and the plurality of data repair lines DRL1 and DRL2 formed in the region where the gate wiring 170 and the data wiring 180 intersect are also formed close to the thin film transistor TFT do.

The plurality of repair gates GRL1 and GRL2 and the plurality of data repair lines DRL1 and DRL2 are disposed to intersect with each other to form a plurality of Repair Cross Areas (RCA). That is, as shown in FIG. 2, the first gate repair line GRL1 and the second gate repair line GRL2 are arranged to cross the first data repair line DRL1 and the second data repair line DRL2 A total of four repair intersection areas RCA are formed.

The oxide semiconductor layer 130 of the thin film transistor TFT is sensitive to hydrogen and therefore silicon nitride (SiNx) having an excellent insulating property formed between the gate electrode 110 and the source and drain electrodes 142 and 144 It is difficult to apply it to a sufficient thickness. Therefore, the electrical barrier property of the insulating layer formed between the gate wiring 170 and the data wiring 180 also deteriorates. In addition, since the oxide semiconductor layer 130 has high conductivity compared to the amorphous silicon (a-Si), the generation frequency of conductive foreign matter generated around the oxide semiconductor layer 130 is high, And the short circuit defect of the data wiring 180 is also increased. Such a short circuit failure can be improved by arranging a plurality of gate repair lines GRL1 and GRL2 and a plurality of data repair lines DRL1 and DRL2 crossing each other, which are formed adjacent to the thin film transistor TFT. That is, if one of four repair cross regions RCA formed by crossing a plurality of gate repair lines GRL1 and GRL2 and a plurality of data repair lines DRL1 and DRL2 is short-circuited due to foreign matter or the like, The signal transmission path can be restored through a repair process in which at least one of the gate repair line (GRL) or the data repair line (DRL) corresponding to the cross area in which the failure occurs is disconnected. The repair method of the structure according to an embodiment of the present invention will be described later in more detail with reference to FIG.

Since the plurality of gate repair lines GRL1 and GRL2 and the plurality of data repair lines DRL1 and DRL2 are formed so as to intersect with each other, they may be utilized as a repair structure for improving the short circuit failure. However, It may be effective also for the disconnection failure of the wiring 180. More specifically, since the gate wiring 170 is composed of the plurality of gate repair lines GRL1 and GRL2, even when a break due to defects occurs in one of the plurality of gate repair lines GRL1 and GRL2, The signal is transferred to another gate repair line, so that the operation of the thin film transistor (TFT) is not affected. Likewise, since the data line 180 is also composed of the plurality of data repair lines DRL1 and DRL2, even if a disconnection due to defects occurs in one of the plurality of data repair lines DRL1 and DRL2, The signal is not affected. Given this additional effect, the gate repair line (GRL) or the data repair line (DRL) referred to in one embodiment of the present invention may be referred to as a gate auxiliary line or a data auxiliary line.

In forming the plurality of gate repair lines GRL1 and GRL2 and the plurality of data repair lines DRL1 and DRL2, arranging the thin film transistors (TFTs) vertically may be effective in designing the pixels. 2, the source electrode 142 and the drain electrode 144 of the thin film transistor TFT are parallel to the data line 180 when the pixel is formed in a rectangular shape having a long length. By arranging them in one direction so that the vertical lengths of the plurality of data repair lines DRL1 and DRL2 and the vertical length of the thin film transistor TFT are designed to be similar, the pixels can be efficiently formed. It is also effective to design the pixel so that the number of the plurality of gate repair lines GRL1 and GRL2 and the number of the data repair lines DRL1 and DRL2 are made the same.

2, the gate repair line (GRL) and the data repair line (DRL) are shown as two, respectively. However, the material and size of the oxide semiconductor layer (TFT), the pixel design area margin, The number of the gate repair line (GRL) and the data repair line (DRL) can be increased in consideration of the defect frequency and the like.

3 is a schematic cross-sectional view of a display device cut along a line B-B 'in FIG. 2, according to an embodiment of the present invention.

A gate electrode 110, a gate insulating layer 120, an oxide semiconductor layer 130, a source electrode 142, and a drain electrode 144 (not shown) are formed on a substrate 100, And a passivation layer 150 for protecting the thin film transistor (TFT) is formed on the thin film transistor TFT. The pixel electrode 160 is connected to the drain electrode 144 of the thin film transistor TFT through the contact hole of the passivation layer 150. 3, the upper structure of the pixel electrode 160 is not specifically shown, but the pixel electrode 160 may be a pixel electrode of a liquid crystal display device or an anode electrode of an organic light emitting display device, depending on the display device. In addition, although FIG. 3 shows a thin film transistor (TFT) formed in an inverted staggered structure, it may be formed in a coplanar structure.

The first gate repair line GRL1 formed on the substrate 100 is formed of the same material as the gate electrode 110. [ A gate insulating layer 120 is formed on the first gate repair line GRL1 and a first data repair line DRL1 and a second data repair line DRL2 are formed on the gate insulating layer 120, And the drain electrode 144 are formed. The first data repair line (DRL1) and the second data repair line (DRL2) are protected by the passivation layer (150).

The first gate repair line GRL1 and the first data repair line DRL1 and the first gate repair line GRL1 and the second data repair line DRL2 are overlapped with each other, RCA) are formed.

4A to 4D are plan views showing a repair method according to an embodiment of the present invention.

4A, when short-circuit failure occurs in the repair cross region RCA where the first gate repair line GRL1 and the first data repair line DRL1 intersect with each other by the conductive foreign substance 190, A repair process may be performed in which the first gate repair line GRL1 corresponding to the repair cross region RCA is disconnected. In this case, the short circuit failure between the gate wiring 170 and the data wiring 180 is resolved, and only the signal same as the data wiring 180 flows in the repair cross region RCA where a short circuit failure occurs.

Similarly, referring to FIG. 4B, when short-circuit failure occurs in the repair cross region RCA where the first gate repair line GRL1 and the first data repair line DRL1 cross each other by the conductive foreign substance 190, A repair process may be performed to disconnect the first data repair line DRL1 corresponding to the repair intersection area RCA where the failure occurs. In this case, the short circuit defect between the gate wiring 170 and the data wiring 180 is resolved, and only the signal same as the gate wiring 170 flows in the repair cross region RCA where the short circuit defect occurs.

When disconnecting only one repair line as shown in FIG. 4A or 4B, disconnecting the gate repair line (GRL) may be advantageous than disconnecting the data repair line (DRL). When the gate repair line (GRL) or the data repair line (DRL) is disconnected, the charge margin due to the load of the gate wiring 170 or the data wiring 180 is reduced, This can be. In the case of a display device to which a thin film transistor (TFT) having an inverted staggered structure is applied, since the area of the gate electrode 110 connected to the gate wiring 170 can be increased, the filling margin of the gate wiring 170 May be more advantageous than the charge margin of the data line 180. In addition, since the gate wiring 170 performs overlap driving, there is an advantage in that the charging margin due to the load is more advantageous. Therefore, it may be more desirable to disconnect the gate repair line (GRL), considering both structural and drive aspects.

Alternatively, the repairing process shown in FIGS. 4A and 4B may be carried out to make the repair crossing area RCA, which has a short-circuited defect, into an island shape. Concretely, by disconnecting both the first gate repair line GRL1 and the first data repair line DRL1 corresponding to the repair cross region RCA in which a short-circuited defect has occurred, the repair cross region RCA in which a short- It can be completely separated from the wiring 170 and the data wiring 180. The short circuit defect between the gate wiring 170 and the data wiring 180 can be solved when only one repair line is disconnected. However, if the signal flowing through the gate wiring 170 or the data wiring 180 is constantly short- Since the crossing area RCA, that is, the conductive foreign matter 190, etc., is transferred through the area where the conductive foreign matter 190 remains, it may cause a secondary problem such as damage due to heat or layer deformation. In consideration of this point, it is more preferable to completely separate the repair cross region RCA in which a short circuit fault occurs through a repair process in which the first gate repair line GRL1 and the first data repair line DRL1 are disconnected . In addition, even if the short circuit due to organic foreign matter is caused, the repair short circuit between the gate wiring 170 and the data wiring 180 can be solved by completely separating the repair cross region RCA where a short circuit defect has occurred.

Although FIGS. 4A and 4B show only the case where the conductive foreign matter 190 is generated in the repair cross region RCA where the first gate repair line GRL1 and the first data repair line DRL1 intersect, The repair GRL and the repair cross area RCA that intersects the plurality of data repair lines DRL. In this case, the repair method described above can be applied in various applications.

Referring to FIGS. 4C and 4D, since the structure according to an embodiment of the present invention is advantageous in disconnection of the source electrode 142 and the data line 180, When the short circuit between the source electrode 110 and the source electrode 142 occurs, the probability of igniting the arm can be increased. More specifically, the source electrode 142 connected to the second data repair line GRL2 of the data line 180 is disconnected from the second data repair line GRL2, and the pixel electrode 160 and the common electrode (not shown) ) Is performed, thereby contributing to enhancement of the cancer ignition probability. For reference, in the dark ignition process, when a few pixels on the black screen emit bright light due to defective bright points, the defective state is clearly visible. On the other hand, even if some pixels on the white screen are darkened to emit light, Which is one of the repair methods of defective pixels.

In the repair process described with reference to FIGS. 4A to 4D, a method using a laser may be utilized, but the present invention is not limited thereto, and various repair processes for disconnecting wiring can be applied.

Fig. 5 is a table showing short-circuit defect rate due to foreign matter in one embodiment of the present invention and a comparative example.

The comparative example has a structure in which the gate wiring and the data wiring do not include a plurality of repair lines according to an embodiment of the present invention. More specifically, in a region adjacent to the thin film transistor, Respectively. In this case, although the short circuit defect ratio between the gate wiring and the data wiring occurred about 5% compared with the total defect ratio, since there is one region where the gate wiring and the data wiring intersect, the repair process was difficult.

The embodiment is a structure in which the gate wiring and the data wiring include a plurality of repair lines according to an embodiment of the present invention, and more particularly, the structure shown in FIG. In this case, the short circuit defect ratio between the gate wiring and the data wiring was about 5%, which is similar to that of the comparative example. However, the short circuit defect ratio was reduced to about 1% and the defect ratio was improved through the repair process. Specifically, a repair process for disconnecting at least one of a gate repair line and a data repair line corresponding to an intersection area where a short circuit fault occurred was performed, and the repair success rate was about 80%. As a result, the short circuit defect ratio between the gate wiring and the data wiring, which had occurred about 5% before the repairing process, was reduced to about 1% after the repairing process.

In a display device according to an embodiment of the present invention, at least two of the plurality of gate sub-lines may be connected to the gate electrode of the thin film transistor.

The display device according to an embodiment of the present invention may apply the same signal to a plurality of gate sub-lines.

A display device according to an embodiment of the present invention may be formed by branching a plurality of data auxiliary lines from one data line.

A display device according to an embodiment of the present invention may apply the same signal to a plurality of data auxiliary lines.

A display device according to an embodiment of the present invention may have a source electrode or a drain electrode of a thin film transistor connected to one of a plurality of data auxiliary lines.

A display device according to an embodiment of the present invention may have a source electrode or a drain electrode of a thin film transistor connected to a data auxiliary line disposed closest to the thin film transistor among the plurality of data auxiliary lines.

In the display device according to an embodiment of the present invention, the pixel electrode may be connected to the source electrode of the thin film transistor or the drain electrode, which is not connected to the data auxiliary line.

A display device according to an embodiment of the present invention may have a source electrode and a drain electrode of a thin film transistor arranged in a direction parallel to the data line.

In the display device according to an embodiment of the present invention, the number of the plurality of gate sub-lines and the number of the plurality of data sub-lines may be the same.

A repair method of a display device according to another embodiment of the present invention is a repair method for a display device, comprising: forming a thin film transistor including an oxide semiconductor layer, a gate line including at least two gate repair lines, and a data line including at least two data repair lines Wherein at least two gate repair lines and at least two data repair lines intersect each other to form at least four repair crossing areas. And a repair step of disconnecting at least one of a gate repair line or a data repair line corresponding to a crossing area where a short circuit fault occurs when a short circuit fault occurs in one of the at least four repair crossing areas.

In the repairing method of a display device according to another embodiment of the present invention, when repairing a gate repair line corresponding to a repair crossing area where a short circuit defect has occurred in the repairing step, the repair crossing area where a short- Lt; / RTI >

In the repair method for a display device according to another embodiment of the present invention, when a repair repair line corresponding to a repair crossing area where a short circuit failure occurs in the repairing step is disconnected, Lt; / RTI >

In the repair method of the display device according to another embodiment of the present invention, the repair step may further include a step of disconnecting both the data repair line and the gate repair line corresponding to the repair crossing area where the short circuit fault occurs.

Although the embodiments of the present invention have been described in detail with reference to the accompanying drawings, it is to be understood that the present invention is not limited to those embodiments and various changes and modifications may be made without departing from the scope of the present invention. . Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of protection of the present invention should be construed according to the claims, and all technical ideas within the scope of equivalents should be interpreted as being included in the scope of the present invention.

100: substrate
110: gate electrode
120: gate insulating layer
130: oxide semiconductor layer
142: source electrode
144: drain electrode
150: Passivation layer
160: pixel electrode
170: gate wiring
180: Data wire
A: pixel
DA: Display area
PA: peripheral area
DU:
GU: Gate driver
GRL1: First gate repair line
GRL2: Second gate repair line
DRL1: first data repair line
DRL2: second data repair line
RCA: repair cross area

Claims (14)

A thin film transistor including an oxide semiconductor layer, a gate electrode, a source electrode, and a drain electrode;
A pixel electrode connected to the thin film transistor;
A gate line including a plurality of gate sub-lines formed adjacent to the thin film transistor; And
And a data line including a plurality of data auxiliary lines formed adjacent to the thin film transistor,
Wherein at least two gate sub-lines of the plurality of gate sub-lines cross at least two data sub-lines of the plurality of data sub-lines. The method according to claim 1,
And at least two of the plurality of gate sub-lines are connected to the gate electrode of the thin film transistor. 3. The method of claim 2,
And the plurality of gate sub-lines are supplied with the same signal. The method according to claim 1,
And the plurality of data auxiliary lines are branched from one data line. 5. The method of claim 4,
Wherein the plurality of data auxiliary lines receive the same signal. 6. The method of claim 5,
And a source electrode or a drain electrode of the thin film transistor is connected to one of the plurality of data auxiliary lines. The method according to claim 6,
Wherein a source electrode or a drain electrode of the thin film transistor is connected to a data auxiliary line disposed closest to the thin film transistor among the plurality of data auxiliary lines. The method according to claim 6,
Wherein the pixel electrode is connected to an electrode not connected to the data auxiliary line among a source electrode or a drain electrode of the thin film transistor. The method according to claim 1,
Wherein a source electrode and a drain electrode of the thin film transistor are arranged in a direction parallel to the data line. The method according to claim 1,
Wherein the number of the plurality of gate sub-lines is equal to the number of the plurality of data sub-lines. Forming a thin film transistor comprising an oxide semiconductor layer on a substrate, a gate line including at least two gate repair lines, and a data line including at least two data repair lines;
Forming at least four repair repair areas by at least two repair lines and the at least two repair repair lines; And
And a repair step of disconnecting at least one of the gate repair line and the data repair line corresponding to the crossing area in which the short circuit fault has occurred when a short circuit fault occurs in one of the at least four repair crossing areas Repair method of the device. 12. The method of claim 11,
Wherein the same repair signal line as the data line is applied to the repair crossing area where the short circuit failure occurs when the repair line corresponding to the repair crossing area in which the short circuit defect has occurred is disconnected in the repairing step. 12. The method of claim 11,
And a repair signal line corresponding to the repair crossing area where the short-circuit defect has occurred is disconnected in the repairing step, the same signal as the gate line is applied to the repair crossing area where the short-circuit defect has occurred. 12. The method of claim 11,
Wherein the repairing step further comprises disconnecting both the data repair line and the gate repair line corresponding to the repair crossing area where the short circuit fault has occurred.

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