KR20150123538A - Method of growing nitride semiconductor and light emitting device fabricated by using the same - Google Patents

Abstract

Disclosed are a method for growing a nitride semiconductor and a light emitting device manufactured thereby. The light emitting device according to the present invention includes an n-type nitride semiconductor layer which includes an intermediate layer, an active layer which is located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer which is located on the active layer. The intermediate layer includes a super lattice layer which is formed by repetitively stacking a first nitride layer and a second nitride layer with bandgap energy which is smaller than the bandgap energy of the first nitride layer. The first nitride layer is doped with an n-type of doping density over 5 x 1019atoms/cm^3.

Description

TECHNICAL FIELD [0001] The present invention relates to a nitride semiconductor growth method, and a light emitting device using the same. BACKGROUND ART [0002]

The present invention relates to a nitride semiconductor growth method and a light emitting device manufactured using the same, and more particularly, to a nitride semiconductor growth method capable of improving crystallinity including an intermediate layer and a light emitting device having a reduced forward voltage.

Among the group III-V compound semiconductors, nitride semiconductors ((Al, Ga, In) N) have excellent electromagnetic characteristics and are recently used in various fields such as light emitting diodes, photodetectors, and high speed electronic devices. Particularly, gallium nitride (GaN) has an energy band gap of 3.4 eV and has a direct transition type property, so that it is widely used for manufacturing various semiconductor devices.

A similar substrate such as a gallium nitride substrate may be used in the production of a nitride semiconductor, but it is difficult to produce an ingot type because gallium nitride has a melting point of 2000 ° C or higher and a very high nitrogen vapor pressure. Therefore, the nitride semiconductor is generally manufactured using a different substrate such as sapphire (Al ₂ O ₃ ), silicon carbide (SiC), silicon (Si), or the like. Among these different types of substrates, a sapphire substrate having a C plane as a growth surface is the most widely used.

However, nitride semiconductors fabricated using heterogeneous substrates have high defect densities due to differences in lattice constant and thermal expansion coefficient between the growth substrate and the nitride semiconductor. Particularly, stress and strain due to the lattice constant difference are generated in the nitride semiconductor grown on the different substrate, and the piezoelectric polarization is generated accordingly. Furthermore, the nitride semiconductor grown on the C-plane sapphire substrate has the C-plane as the growth plane, and the nitride semiconductor grown in the normal direction to the C-plane has spontaneous polarization.

Such a piezoelectric polarization and a polarization phenomenon by spontaneous polarization cause a phenomenon in which the energy band of the nitride semiconductor bends, which separates the distribution of holes and electrons in the active layer. As a result, the recombination efficiency between the electrons and the electrons is reduced to lower the luminous efficiency, the red shift phenomenon of light emission occurs, and the forward voltage Vf of the light emitting element is increased.

In order to solve the problems occurring in the nitride semiconductor, a technique has been disclosed in which an intermediate layer is inserted into the n-type semiconductor layer to block defects. The intermediate layer includes an AlGaN layer. However, the intermediate layer formed of the AlGaN layer has a bandgap energy larger than that of the n-type GaN layer, thereby interfering with the injection of electrons into the active layer, thereby increasing the forward voltage of the light emitting element.

Therefore, there is a need for an intermediate layer capable of maintaining the electron injection efficiency into the active layer while improving the crystallinity by blocking defects of the nitride semiconductor.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a nitride semiconductor structure and a growth method thereof capable of improving electron injection efficiency into an active layer.

A further object of the present invention is to provide a light emitting device including the nitride semiconductor structure with improved luminous efficiency and low forward voltage.

A light emitting device according to one aspect of the present invention includes: an n-type nitride semiconductor layer including an intermediate layer; An active layer located on the n-type nitride semiconductor layer; And a p-type nitride semiconductor layer disposed on the active layer, wherein the intermediate layer includes a super lattice layer in which a first nitride layer and a second nitride layer having a band gap energy smaller than that of the first nitride layer are repeatedly stacked And the first nitride layer is doped with an n-type doping concentration of 5 x 10 ¹⁹ atoms / cm ³ or more.

Thus, the electron injection efficiency into the active layer can be increased.

Further, the first nitride layer may be doped with an n-type doping concentration of 2.9 x 10 ²⁰ atoms / cm ³ or more.

The first nitride layer and the second nitride layer may be a binary to quaternary nitride layer including at least one of Al, Ga, and In.

The first nitride layer is an AlGaN layer, the second nitride layer is a GaN layer or an InGaN layer, and the second nitride layer may be in an undoped state.

In the AlGaN layer, the composition ratio of Al may be 0.02 or more and 0.2 or less.

In the plurality of first nitride layers, the doping concentration of the first nitride layer disposed at a position relatively closer to the active layer is less than the doping concentration of the first nitride layer disposed relatively far from the active layer Can be high.

The light emitting device may further include a first superlattice layer positioned between the n-type nitride semiconductor layer and the active layer.

The first superlattice layer may include a structure in which a GaN layer and an InGaN layer are repeatedly stacked.

The intermediate layer may be located directly below the first superlattice layer.

The light emitting device may further include a second superlattice layer positioned on the first superlattice layer, and the second superlattice layer may include an Al _x Ga _(1-x) N layer (0 < ) And an Al _y Ga _(1-y) N layer (0 <y <1) are repeatedly stacked, and x may be larger than y.

The light emitting device may further include: a substrate located below the n-type semiconductor layer; And an undoped nitride semiconductor layer disposed between the substrate and the n-type semiconductor layer.

Further, a first electrode having a part of the p-type nitride semiconductor layer, the active layer and the n-type nitride semiconductor layer removed and located in a region where the top surface of the n-type semiconductor layer is partially exposed; And a second electrode located on the p-type nitride semiconductor layer.

The light emitting device includes: a first electrode located under the n-type nitride semiconductor layer; And a second electrode located on the p-type nitride semiconductor layer.

According to another aspect of the present invention, there is provided a nitride semiconductor growth method comprising: forming an n-type nitride semiconductor layer including an intermediate layer on a substrate; Forming an active layer on the n-type nitride semiconductor layer; And forming a p-type nitride semiconductor layer on the active layer, wherein the intermediate layer comprises a super lattice layer in which a first nitride layer and a second nitride layer having a smaller band gap energy than the first nitride layer are repeatedly stacked And the first nitride layer may be doped with an n-type doping concentration of 5 x 10 ¹⁹ atoms / cm ³ or more.

The first nitride layer may be doped with an n-type doping concentration of 2.9 x 10 ²⁰ atoms / cm ³ or more.

The intermediate layer may be grown using MOCVD, the first nitride layer may be an AlGaN layer, the second nitride layer may be a GaN layer or an InGaN layer, and the second nitride layer may be undoped.

In the AlGaN layer, the composition ratio of Al may be 0.02 or more and 0.2 or less.

Forming the intermediate layer comprises introducing an Al source gas, a Ga source gas, an N source gas, and an n-type dopant precursor into the MOCVD chamber to grow a first nitride layer; Stopping the introduction of the Al source gas and the n-type dopant precursor; Continuously introducing the Ga source gas and the N source gas into the MOCVD chamber to grow a second nitride layer to form a laminated structure of the first nitride layer and the second nitride layer; And forming a superlattice structure by repeating a process of forming a laminated structure of the first nitride layer and the second nitride layer.

During the growth of the second nitride layer, an In source gas may be additionally introduced, and the Ga source gas may comprise TEGa.

The amount of the n-type dopant precursor can be adjusted so that the doping concentration of the first nitride layer located on the relatively upper portion of the first nitride layers is higher than the doping concentration of the first nitride layer located on the relatively lower portion of the first nitride layers have.

The growth method may further include forming a first superlattice layer on the n-type nitride semiconductor layer before forming the active layer, wherein the first superlattice layer includes a GaN layer and an InGaN layer repeatedly And may include a laminated structure.

The growth method may further include forming a second superlattice layer located on the first superlattice layer, wherein the second superlattice layer comprises an Al _x Ga _(1-x) N layer (0 < x <1) and Al _y Ga _(1-y) N layers (0 <y <1) are repeatedly stacked.

The nitride semiconductor structure according to the present invention may include an intermediate layer including a superlattice structure including a high concentration doping layer so as to improve electron injection efficiency into the active layer and prevent defects and the like from propagating to the active layer have.

Further, the light emitting device including the nitride semiconductor structure of the present invention can have a low forward voltage, and further, the current dispersion efficiency can be increased, so that the light emitting efficiency of the light emitting device can be increased.

FIG. 1 and FIG. 2 are cross-sectional views illustrating a structure of a nitride semiconductor according to an embodiment of the present invention and a growth method thereof.
3 is a cross-sectional view illustrating a structure of a nitride semiconductor according to another embodiment of the present invention and a method of growing the same.
4 and 5 are cross-sectional views illustrating a light emitting device according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can sufficiently convey the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, angle, and the like of the components may be exaggerated for convenience. It is also to be understood that when an element is referred to as being "above" or "above" another element, But also includes the case where there are other components in between. Like reference numerals designate like elements throughout the specification.

In embodiments of the present invention, the nitride semiconductor layers may be formed by growing in a MOCVD (Metal Organic Chemical Vapor Deposition) chamber. Therefore, the growth conditions and the like shown in the following description can be applied to the case where the nitride semiconductor layers are grown using MOCVD. However, the present invention is not limited thereto, and the case of growing a nitride semiconductor using MBE (Molecular Beam Epitaxy) or HVPE (Hydride Vapor Phase Epitaxy) may also be included in the scope of the present invention.

FIG. 1 and FIG. 2 are cross-sectional views illustrating a structure of a nitride semiconductor according to an embodiment of the present invention and a growth method thereof. The structures of FIGS. 1 and 2 may be formed by sequentially growing semiconductor layers from bottom to top. Hereinafter, this will be described in detail.

Referring to FIG. 1, the nitride semiconductor structure includes an n-type nitride semiconductor layer 110, an active layer 130, and a p-type nitride semiconductor layer 140. In particular, the n-type nitride semiconductor layer 110 may include an intermediate layer 115. In addition, the nitride semiconductor structure may further include a substrate 210, a buffer layer 220, an undoped nitride semiconductor layer 230, and a first superlattice layer 120.

The substrate 210 is not limited as long as it can grow the nitride semiconductor layer, and may be an insulating or conductive substrate. The substrate 210 may be, for example, a sapphire substrate, a silicon substrate, a silicon carbide substrate, an aluminum nitride substrate, or a gallium nitride substrate. In this embodiment, the substrate 210 may be a patterned sapphire substrate (PSS) having a concavo-convex pattern (not shown) on its upper surface, and the PSS may include a C- have. In the present invention, the substrate 210 may be a substrate different from the nitride semiconductor.

The buffer layer 220 may comprise AlGaN and / or GaN and may be grown on the substrate 210 at a temperature of about 500 to 600 &lt; 0 &gt; C. The buffer layer 220 can function as a nucleus layer in which the nitride semiconductor can grow when the substrate 210 is a substrate different from the nitride semiconductor and also can function as a nitride layer, It may also play a role in relieving stress and strain due to lattice constant mismatch.

However, the buffer layer 220 may be omitted.

The undoped nitride semiconductor layer 230 may be located on the buffer layer 220. The undoped nitride semiconductor layer 230 may include (Al, Ga, In) N, for example, the undoped nitride semiconductor layer 230 may include undoped GaN. The undoped nitride semiconductor layer 230 can be formed by introducing a Group III element source and an N source into the chamber, and growing the semiconductor layer without introducing an n-type or p-type dopant precursor.

Thus, the undoped nitride semiconductor layer 230 may be formed on the buffer layer 220 before the growth of the n-type nitride semiconductor layer 110. Since the undoped nitride semiconductor layer 230 does not contain an impurity such as an n-type or p-type dopant and thus has a relatively high crystal quality, the undoped nitride semiconductor layer 230 may be grown on the undoped nitride semiconductor layer 230, It is possible to improve the quality of crystals.

The n-type nitride semiconductor layer 110 may be located on the undoped nitride semiconductor layer 230. The n-type nitride semiconductor layer 110 may include an n-type layer 111 and an intermediate layer 115.

The n-type nitride semiconductor layer 110 may include a nitride semiconductor such as (Al, Ga, In) N, and may further include an n-type dopant such as Si to be doped with n-type. The n-type nitride semiconductor layer 110 may be provided by introducing and growing a Group III element source, an N source, and an n-type dopant precursor into the chamber, and may be formed by growing a Group III element such as GaGa (Trimethylgallium) Source, an N source such as NH ₃ , and an Si dopant precursor may be introduced into the chamber to grow an n-type GaN layer to form an n-type layer 111.

On the other hand, the n-type nitride semiconductor layer 110 includes an intermediate layer 115. The intermediate layer 115 may be located in the n-type nitride semiconductor layer 110 and may be formed to be disposed in an upper region of the n-type nitride semiconductor layer 110. [ In particular, as shown in FIG. 1, the intermediate layer 115 may be formed on the top region of the n-type nitride semiconductor layer 110.

The intermediate layer 115 will be described in detail below with reference to Fig. 2 is a cross-sectional view illustrating the structure of the intermediate layer 115 according to the embodiments of the present invention.

First, referring to FIG. 2A, the intermediate layer 115 includes a super lattice layer in which a first nitride layer 115a and a second nitride layer 115b are repeatedly laminated. The first nitride layer 115a and the second nitride layer 115b may be a binary to quaternary nitride layer including at least one of Al, Ga, and In. The first nitride layer 115a and the second nitride layer 115b may have a band gap The energy may be greater than the band gap energy of the second nitride layer 115b. The first nitride layer 115a may be doped with an n-type dopant, and the doping concentration may be not less than 5 x 10 ¹⁹ atoms / cm ³ , particularly not less than 2.9 x 10 ²⁰ atoms / cm ³ Or more. At this time, the doping concentrations of the first nitride layers 115a may be different from each other or may be the same. On the other hand, the second nitride layer 115b may be in an undoped state.

For example, the first nitride layer 115a may be an n-type AlGaN layer containing Si as a dopant, and the composition ratio of Al may be 0.02 or more and 0.2 or less. The Si concentration of the first nitride layer 115a is 2.9 x 10 ²⁰ atoms / cm ³ Or more. The second nitride layer 115b may be an undoped GaN layer or an InGaN layer, whereby the band gap energy of the second nitride layer 115b is smaller than the band gap energy of the first nitride layer 115a.

As described above, since the superlattice layer is formed as the intermediate layer 115, defects such as dislocations can be prevented from propagating to the active layer 130. Further, since the intermediate layer 115 includes the first nitride layer 115a doped with a relatively high concentration, it is possible to increase the electron injection efficiency into the active layer 130 and prevent the forward voltage of the light emitting element from increasing Rather, it can be lowered. More specifically, the quantum well structure can be formed by forming the first nitride layer 115a having a large band gap energy and the second nitride layer 115b having a relatively small band gap energy in a super lattice structure. At this time, the first nitride layer 115a can be doped with a high concentration to provide a large number of electrons to the intermediate layer, and a large amount of electrons located in the conduction band can move to the active layer without being isolated from the quantum well. Thus, an intermediate layer which can perform the same function as the other defects, such as defect prevention, can be provided while preventing the electron injection efficiency from being lowered by the conventional intermediate layer.

On the other hand, a 2DEG (2-Dimensional Electron Gas) may be formed at each interface by the repetitive lamination structure of the first nitride layer 115a and the second nitride layer 115b. In this case, The movement of electrons in both directions can be facilitated. Therefore, the resistance to both the vertical and horizontal directions is lowered, so that the forward voltage of the light emitting device including the nitride semiconductor layer structure of the present embodiment can be lowered, and the current dispersion efficiency in the device can also be improved.

The intermediate layer 115 is formed by introducing an Al source gas, a Ga source gas, an N source gas, and an n-type dopant precursor into the chamber to grow the first nitride layer 115a and stop the introduction of the Al source gas n-type dopant precursor Thereafter, the Ga source gas and the N source gas are continuously introduced into the chamber to grow the second nitride layer 115b to form a laminated structure of the first nitride layer 115a and the second nitride layer 115b .

Meanwhile, while the second nitride layer 115b is being grown, an In source gas may be further introduced to form an InGaN layer. In this case, TEGa may be used as the Ga source gas. When TEGa is used, the second nitride layer 115b can be formed at a lower growth temperature, and therefore the In content of the InGaN layer can be increased. The mobility of electrons can be improved by increasing the In content in the second nitride layer 115b, so that the luminescent efficiency can be improved if the nitride semiconductor structure of this embodiment is applied to the light emitting device.

2 (b) is a cross-sectional view for explaining the structure of the intermediate layer 115 according to other embodiments.

Referring to FIG. 2 (b), the intermediate layer 115 includes a super lattice layer in which first nitride layers 115c, 115d, and 115e and a second nitride layer 115f are repeatedly laminated. 2B, the doping concentration of the first nitride layers 115c, 115d, and 115e may change sequentially depending on the position, unlike the embodiment of FIG. 2 (a).

Specifically, a first nitride layer 115c disposed closer to the active layer 130 from the first nitride layer 115c disposed at a position distant from the active layer 130 among the first nitride layers 115c, 115d, and 115e The doping concentration can be increased toward the gate electrode 115a. That is, the doping concentration of the first nitride layer 115d is higher than the doping concentration of the first nitride layer 115c and the doping concentration of the first nitride layer 115e may be higher than the doping concentration of the first nitride layer 115d have. Thus, the doping concentration of the first nitride layer disposed on the relatively upper portion can be made higher than the doping concentration of the first nitride layer disposed on the relatively lower portion. Accordingly, injection efficiency of electrons injected into the active layer 130 can be further improved.

The second nitride layer 115f may have similar properties as the second nitride layer 115b of FIG. 2 (a), and the detailed description is omitted hereafter.

In the present embodiment, the intermediate layer 115 is formed by introducing an Al source gas, a Ga source gas, an N source gas, and an n-type dopant precursor into the chamber to grow the first nitride layer 115a, After the introduction of the dopant precursor is stopped, the Ga source gas and the N source gas are continuously introduced into the chamber to grow the second nitride layer 115b to form a laminate of the first nitride layer 115a and the second nitride layer 115b To form a structure. At this time, the doping concentration of the first nitride layer located at the relatively upper portion of the first nitride layers 115c, 115d, and 115e is set to be higher than the doping concentration of the first nitride layer located at the relatively lower portion, Type dopant precursor can be controlled. The n-type dopant may be, for example, Si.

The first superlattice layer 120 may be located on the n-type nitride semiconductor layer 110 and may include a structure in which a plurality of semiconductor layers including (Al, In, Ga) N are stacked. For example, the first superlattice layer 120 may include a structure in which an InGaN layer and a GaN layer are repeatedly stacked.

The first superlattice layer 120 may be grown and grown on the n-type nitride semiconductor layer 110 in the MOCVD chamber. The first superlattice layer 120 may be formed by stacking stress and strain due to lattice mismatch in the active layer 130 and preventing defects such as dislocations from propagating, thereby improving the crystal quality of the active layer 130.

The active layer 130 may include a nitride semiconductor such as (Al, Ga, In) N and may be grown on the n-type nitride semiconductor layer 110 using a technique such as MOCVD, MBE, or HVPE . In addition, the active layer 153 may have a multiple quantum well structure (MQW) including a plurality of barrier layers and a well layer. At this time, the elements constituting the semiconductor layers and the composition thereof can be adjusted so that the semiconductor layers forming the multiple quantum well structure emit light having a desired peak wavelength.

The p-type nitride semiconductor layer 140 may include a nitride semiconductor such as (Al, Ga, In) N and may be grown on the active layer 130 using a technique such as MOCVD, MBE, or HVPE . The p-type nitride semiconductor layer 140 may include a p-type dopant, for example, Mg as a dopant.

By including the intermediate layer 115 in the nitride semiconductor structure of the present embodiment, it is possible to improve the efficiency of injecting electrons into the active layer by doping at a high concentration while blocking diffusion of defects and relieving stress and strain.

3 is a cross-sectional view illustrating a structure of a nitride semiconductor according to another embodiment of the present invention and a method of growing the same.

The nitride semiconductor structure of FIG. 3 differs from the embodiment described with reference to FIGS. 1 and 2 in that it further includes a second superlattice layer 240. Hereinafter, differences will be described in detail, and a detailed description of the same configuration will be omitted.

The second superlattice layer 240 may be positioned between the active layer 130 and the first superlattice layer 120. The second superlattice layer 240 may include a structure in which an Al _x Ga _{1 -x} N layer and an Al _y Ga _{1 -y} N layer are repeatedly stacked (0 <x <1, 0 <y <1), wherein, x is greater than y, Al _x Ga _(1-x) n layer is an undoped state, Al _y Ga _(1-y) n layer may be doped with n-type. _{Moreover, Al x Ga (1-x} ) The band gap energy of the N layer is greater than the band gap energy of the barrier layer of the active layer 130, Al _y Ga _(1-y), the band gap energy of the N layer is an active layer (130) The composition ratio can be determined so as to be larger than the band gap energy of the well layer. Accordingly, the momentum of electrons in the second superlattice layer 240 is reduced, and the luminous efficiency of the light emitting device to which the nitride semiconductor structure of the present embodiment is applied can be further improved.

4 and 5 are cross-sectional views illustrating a light emitting device according to another embodiment of the present invention.

The light emitting device of Figs. 4 and 5 includes a nitride semiconductor structure according to the embodiment of Figs. Therefore, detailed description of overlapping configurations will be omitted.

Referring to FIG. 4, the light emitting device includes an n-type nitride semiconductor layer 110, an active layer 130, and a p-type nitride semiconductor layer 140. Furthermore, the light emitting device may further include a first superlattice layer 120, a first electrode 251, and a second electrode 253.

The light emitting device of FIG. 4 may be a vertical light emitting device including a nitride semiconductor structure according to embodiments of the present invention. Accordingly, the light emitting device includes a first electrode 251 located under the n-type nitride semiconductor layer 110 and electrically connected to the first electrode 251, and a second electrode 252 located on the p-type nitride semiconductor layer 140 and electrically connected to the n- (253).

The light emitting device of FIG. 4 may be fabricated by removing the substrate 210, the buffer layer 220, and the undoped nitride semiconductor layer 230 in the nitride semiconductor structure according to the embodiments of FIGS. The substrate 210 may be removed from the n-type nitride semiconductor layer 110 by a method of separating the substrate 210 using a method such as laser lift-off, chemical lift-off, or stress lift-off, , A method of removing the substrate 210 by a chemical method may be used.

Referring to FIG. 5, the light emitting device includes an n-type nitride semiconductor layer 110, an active layer 130, and a p-type nitride semiconductor layer 140. Furthermore, the light emitting device may further include a first superlattice layer 120, a first electrode 261, and a second electrode 253.

The light emitting device of FIG. 5 may be a light emitting device having a horizontal structure including the nitride semiconductor structure according to the embodiments of the present invention. Accordingly, the light emitting device is formed by partially removing the p-type nitride semiconductor layer 140, the active layer 130, the first superlattice layer 120, and the n-type nitride semiconductor layer 110, As shown in FIG. The first electrode 261 may be located on the exposed region and the second electrode 263 may be located on the p-type nitride semiconductor layer 140.

The light emitting devices according to embodiments of the present invention have an n-type nitride semiconductor layer 110 including an intermediate layer 115. Accordingly, the active layer 130 having an excellent crystal quality can be provided, and the efficiency with which electrons are injected into the active layer 130 can be improved to have a low forward voltage. Further, the resistance to both the vertical direction and the horizontal direction is lowered by the intermediate layer 115, so that a light emitting device having excellent current dispersion efficiency can be provided while keeping the forward voltage low.

However, the present invention is not limited thereto, and the nitride semiconductor structure of the present invention can also be applied to light emitting devices having various structures.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims (18)

An n-type nitride semiconductor layer including an intermediate layer;
An active layer located on the n-type nitride semiconductor layer; And
And a p-type nitride semiconductor layer located on the active layer,
Wherein the intermediate layer comprises a super lattice layer in which a first nitride layer and a second nitride layer having a smaller band gap energy than the first nitride layer are repeatedly laminated,
Wherein the first nitride layer is doped with an n-type doping concentration of 5 x 10 ¹⁹ atoms / cm ³ or more. The method according to claim 1,
And the first nitride layer is doped with an n-type doping concentration of 2.9 x 10 ²⁰ atoms / cm ³ or more. The method according to claim 1,
Wherein the first nitride layer and the second nitride layer are a binary to quaternary nitride layer including at least one of Al, Ga, and In. The method of claim 3,
Wherein the first nitride layer is an AlGaN layer, the second nitride layer is a GaN layer or an InGaN layer, and the second nitride layer is an undoped state. The method of claim 4,
In the plurality of first nitride layers, the doping concentration of the first nitride layer disposed at a position relatively closer to the active layer is less than the doping concentration of the first nitride layer disposed relatively far from the active layer High luminous element. The method according to claim 1,
And a first superlattice layer positioned between the n-type nitride semiconductor layer and the active layer. The method of claim 6,
Wherein the first superlattice layer comprises a structure in which a GaN layer and an InGaN layer are repeatedly laminated. The method of claim 6,
And the intermediate layer is located immediately below the first superlattice layer. The method of claim 6,
And a second superlattice layer positioned on the first superlattice layer,
The second superlattice layer includes a structure in which an Al _x Ga _1-x N layer (0 <x <1) and an Al _y Ga _(1-y) N layer (0 <y <1) , X is larger than y. Forming an n-type nitride semiconductor layer including an intermediate layer on a substrate;
Forming an active layer on the n-type nitride semiconductor layer; And
And forming a p-type nitride semiconductor layer on the active layer,
Wherein the intermediate layer comprises a super lattice layer in which a first nitride layer and a second nitride layer having a smaller band gap energy than the first nitride layer are repeatedly laminated,
Wherein the first nitride layer is doped with an n-type doping concentration of 5 x 10 ¹⁹ atoms / cm ³ or more. The method of claim 10,
Wherein the first nitride layer is doped with an n-type doping concentration of 2.9 x 10 ²⁰ atoms / cm ³ or more. The method of claim 10,
Wherein the intermediate layer is grown using MOCVD, the first nitride layer is an AlGaN layer, the second nitride layer is a GaN layer or an InGaN layer,
Wherein the second nitride layer is in an undoped state. The method of claim 12,
Wherein the composition ratio of Al in the AlGaN layer is 0.02 or more and 0.2 or less. The method of claim 12,
The formation of the above-
Introducing an Al source gas, a Ga source gas, an N source gas, and an n-type dopant precursor into the MOCVD chamber to grow a first nitride layer;
Stopping the introduction of the Al source gas and the n-type dopant precursor;
Continuously introducing the Ga source gas and the N source gas into the MOCVD chamber to grow a second nitride layer to form a laminated structure of the first nitride layer and the second nitride layer;
And forming a superlattice structure by repeating a process of forming a laminated structure of the first nitride layer and the second nitride layer. 15. The method of claim 14,
During the growth of the second nitride layer, an additional source of In source gas is introduced,
Wherein the Ga source gas comprises TEGa. 15. The method of claim 14,
The doping concentration of the n-type dopant precursor is adjusted so that the doping concentration of the first nitride layer located on the relatively upper portion of the first nitride layers is higher than the doping concentration of the first nitride layer located on the relatively lower portion of the first nitride layers A method for growing a nitride semiconductor. The method of claim 10,
Further comprising forming a first superlattice layer on the n-type nitride semiconductor layer before forming the active layer,
Wherein the first superlattice layer includes a structure in which a GaN layer and an InGaN layer are repeatedly stacked. 18. The method of claim 17,
Further comprising forming a second superlattice layer located on the first superlattice layer,
The second superlattice layer includes a structure in which an Al _x Ga _1-x N layer (0 <x <1) and an Al _y Ga _(1-y) N layer (0 <y <1) , Wherein x is greater than y.

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