KR20150122605A - 소프트 펄싱 - Google Patents

소프트 펄싱 Download PDF

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Publication number
KR20150122605A
KR20150122605A KR1020150057037A KR20150057037A KR20150122605A KR 20150122605 A KR20150122605 A KR 20150122605A KR 1020150057037 A KR1020150057037 A KR 1020150057037A KR 20150057037 A KR20150057037 A KR 20150057037A KR 20150122605 A KR20150122605 A KR 20150122605A
Authority
KR
South Korea
Prior art keywords
state
signal
generator
graph
during
Prior art date
Application number
KR1020150057037A
Other languages
English (en)
Korean (ko)
Inventor
주니어 존 씨. 발코어
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/260,051 external-priority patent/US10157729B2/en
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20150122605A publication Critical patent/KR20150122605A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma Technology (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
KR1020150057037A 2014-04-23 2015-04-23 소프트 펄싱 KR20150122605A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/260,051 2014-04-23
US14/260,051 US10157729B2 (en) 2012-02-22 2014-04-23 Soft pulsing

Publications (1)

Publication Number Publication Date
KR20150122605A true KR20150122605A (ko) 2015-11-02

Family

ID=54453968

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150057037A KR20150122605A (ko) 2014-04-23 2015-04-23 소프트 펄싱

Country Status (3)

Country Link
KR (1) KR20150122605A (zh)
CN (1) CN105047513B (zh)
TW (1) TWI677263B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200086751A (ko) * 2017-12-07 2020-07-17 램 리써치 코포레이션 반도체 rf 플라즈마 프로세싱을 위한 펄싱 내 rf 펄싱

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107321586B (zh) * 2017-06-29 2018-07-03 华中科技大学 一种液电脉冲激波产生装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7480571B2 (en) * 2002-03-08 2009-01-20 Lam Research Corporation Apparatus and methods for improving the stability of RF power delivery to a plasma load
US20050241762A1 (en) * 2004-04-30 2005-11-03 Applied Materials, Inc. Alternating asymmetrical plasma generation in a process chamber
KR20090067301A (ko) * 2007-12-21 2009-06-25 (주)이큐베스텍 임피던스 정합 장치
KR20150017389A (ko) * 2008-05-14 2015-02-16 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ 전력 전달을 위한 시간 분해된 조정 방식을 이용하는 펄스화된 플라즈마 처리를 위한 방법 및 장치
TWI455172B (zh) * 2010-12-30 2014-10-01 Semes Co Ltd 基板處理設備、電漿阻抗匹配裝置及可變電容器
TWI599272B (zh) * 2012-09-14 2017-09-11 蘭姆研究公司 根據三個或更多狀態之功率及頻率調整

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200086751A (ko) * 2017-12-07 2020-07-17 램 리써치 코포레이션 반도체 rf 플라즈마 프로세싱을 위한 펄싱 내 rf 펄싱

Also Published As

Publication number Publication date
CN105047513B (zh) 2018-03-30
TW201607379A (zh) 2016-02-16
TWI677263B (zh) 2019-11-11
CN105047513A (zh) 2015-11-11

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