KR20150118760A - Thin film encapsulation unit and method of manufacturing the same - Google Patents

Abstract

Disclosed are a thin film encapsulation unit and a manufacturing method thereof. An embodiment of the present invention provides the thin film encapsulation unit arranged on the upper part of a substrate of an organic solar cell, which comprises: a first thin film position on the substrate and composed of one between a high refractive index material and a low refractive index material; and a second thin film positioned on the first thin film and composed of the other between the high refractive index material and the low refractive index material, and adjusts the thickness of the first thin film and the second thin film to have a photonic band gap (PBG) structure.

Description

TECHNICAL FIELD [0001] The present invention relates to a thin film encapsulation unit and a method of manufacturing the same,

One embodiment of the present invention relates to a thin film encapsulating unit and a method of manufacturing the same.

Organic thin films used in organic devices such as OLED (Organic Light-Emitting Diode), OPV (Organic Photovoltaic) and OTFT (Organic Thin Film Transistor) are very vulnerable to moisture and oxygen in the atmosphere. Optical and mechanical properties are greatly changed, not only the performance of the device is deteriorated but also the lifetime is drastically reduced.

Therefore, a sealing technique for preventing the reduction of the efficiency of the organic device due to the penetration of moisture or oxygen and prolonging the service life is a key factor for commercialization of the organic device.

In the case of mass-produced OLEDs, a sealing technique is used in which a metal substrate with a desiccant or an organic substrate is adhered with an epoxy bond to form a film.

However, since the bag structure is subject to various process steps due to the complexity of the structure, the manufacturing cost is high, flexibility is low, and there is a problem in making the organic device slim.

As an alternative to this, recently, thin film encapsulation technology is attracting attention. The organic device to which the thin film encapsulation technology is applied can not only reduce the manufacturing cost by simplifying the process, but also have flexibility and slimness of the device.

In order to use a thin film as an encapsulating material for an organic device, it is required to manufacture a high-density, defect-free thin film which can effectively prevent permeation of water or oxygen.

However, it is very difficult to fabricate thin films at high density under process conditions that do not affect the organic devices, and therefore defects such as cracks, pinholes, and pores are present in actually formed thin films.

In order to solve this problem, a multilayer thin film bag having a laminate of an inorganic thin film having a low water or oxygen permeability and an organic thin film having relatively few defects but having a high water or oxygen permeability although a defect exists is proposed.

This multi-layer thin film encapsulation has the effect of dramatically increasing the lag-time of the thin film encapsulation by inducing long and complicated paths of moisture and oxygen that have passed through the defects of the inorganic thin film between the inorganic thin films have. As a result, it is known that the moisture permeability can be lowered to a maximum of 10 ^-5 g / m ² / day or less.

However, since the multilayer thin film encapsulation is designed to focus on moisture permeability rather than optical properties, the light transmittance is as low as about 75 to 85%, thereby reducing the optical characteristics of the organic device.

Accordingly, development of multilayer thin film encapsulation with high light transmittance is required without damaging the moisture permeability.

One embodiment of the present invention is to reduce the water permeability (WVTR) and the oxygen permeability (OTR) by making the path of moisture or oxygen in the air into the organic solar cell longer by repeating the lamination of the organic material and the inorganic material, The lamination thickness of the inorganic material is optimized to minimize the reflection caused by the thin film encapsulating unit of the multi-layered structure, thereby maximizing the amount of light incident on the organic solar battery, thereby improving the efficiency and lifetime of the organic solar battery. And a method for manufacturing the same.

One embodiment of the present invention is a thin film encapsulation unit formed on a substrate of an organic solar cell, the thin film encapsulation unit comprising: a first thin film positioned on the substrate and being one of a high refractive index material and a low refractive index material; And a second thin film on the first thin film, the second thin film being another one of a high refractive index material and a low refractive index material, wherein a thickness of the first thin film and a thickness of the second thin film are adjusted to form a photonic band Gap structure is formed on a substrate.

Wherein the substrate is a sapphire substrate, a glass substrate. A silicon substrate on which an insulating layer is deposited, a polymer substrate, or a metal substrate.

The high refractive index material may be an inorganic material or an organic material.

The low refractive index material may be an inorganic material or an organic material.

The inorganic material is _{Al 2 O 3, SiO 2,} B 2 O5, TiO 2, SnO 2, ZnO, In 2 O 3, ZrO 2, GeO 2, and a metal oxide containing AlSiO _x; AlN, a metal nitride including _{Si 3 N 4, TiN, ZrN} , and BN; Metal oxynitrides including AlON, SiON, and AlSiON; And a group consisting of InSnO, SiZnO, InZnO and InGaZnO; Or more.

The organic material may be epoxy; Silicone; Acrylic resin; Polyurethane; Parylene; And groups comprising -N, -C, -D, or -HT; Or more.

A thin film composed of any one of the high refractive index material and the low refractive index material and the other one of the high refractive index material and the low refractive index material is repeatedly laminated on the second thin film to form another thin film of the high refractive index material or the low refractive index material A third, a fourth, or a fifth thin film composed of the first, the second, and the third thin film.

The photonic bandgap structure may be a Bragg grating, a high-pass filter, or a low-pass filter structure.

The Bragg grating structure may have a Bragg grating structure in which the thickness of the thin film including the first thin film and the second thin film is? / 4n (where n is the refractive index of the thin film) with respect to the effective absorption wavelength? have.

The thickness of the first or second thin film made of the high refractive index material may be 100 nm to 1,000 nm.

The thickness of the first or second thin film made of the low refractive index material may be 200 nm to 1,000 nm.

The high-pass filter structure or the low-pass filter structure may have a structure in which the thickness of the first thin film is? / 8n (where n is the thickness of the thin film , The thickness of the second thin film and the third thin film is? / 4n, and the thickness of the fourth thin film and the fifth thin film is? / 8n.

The thickness of the first or second thin film made of the high refractive index material may be 100 nm to 1,000 nm.

The thickness of the first or second thin film made of the low refractive index material may be 200 nm to 1,000 nm.

The moisture permeability may be 10 ^-5 g / m ² / day or less, and the light transmittance may be 90% or more.

Another embodiment of the present invention is a method of manufacturing a thin film encapsulation unit formed on a substrate of an organic solar cell, wherein a first thin film composed of any one of a high refractive index material and a low refractive index material is formed on the substrate, Of a thickness of? / 4n or? / 8n (where n is the refractive index of the thin film). A second thin film composed of the other one of the high refractive index material and the low refractive index material and a third thin film composed of any one of the high refractive index material and the low refractive index material are formed on the first thin film at a thickness of? / 4n of the effective absorption wavelength? ; And a fourth thin film composed of the other one of the high refractive index material and the low refractive index material and a fifth thin film composed of any one of the high refractive index material and the low refractive index material on the third thin film, lambda / 8n, wherein N is an integer of 3 or more.

The high refractive index material may be an inorganic material or an organic material.

The low refractive index material may be an inorganic material or an organic material.

The first or second thin film composed of the inorganic material may be formed by a sputtering method, an electron beam evaporation method, a thermal evaporation method, an atomic layer deposition (ALD), a plasma enhanced chemical vapor deposition (PECVD), a pulsed laser deposition (PLD) .

The first or second thin film composed of the inorganic material may be co-deposited, including co-sputtering, co-PLD, or co-IBD, . ≪ / RTI >

The first or second thin film composed of the organic material may be formed by vapor deposition, thermal deposition, spin coating, inkjet printing, screen printing, doctor blading, or polymer polymerization.

The moisture permeability may be 10 ^-5 g / m ² / day or less, and the light transmittance may be 90% or more.

One embodiment of the present invention is to reduce the water permeability (WVTR) and the oxygen permeability (OTR) by making the path of moisture or oxygen in the air into the organic solar cell longer by repeating the lamination of the organic material and the inorganic material, The lamination thickness of the inorganic material is optimized to minimize the reflection caused by the thin film encapsulating unit of the multi-layered structure, thereby maximizing the amount of light incident on the organic solar battery, thereby improving the efficiency and lifetime of the organic solar battery. And a method of manufacturing the same.

1 is a cross-sectional view of a thin film encapsulation unit according to an embodiment of the present invention.
FIG. 2 is a graph showing the relationship between the thicknesses of Si ₃ N ₄ and parylene layers stacked in five layers in a thin film encapsulation unit fabricated by repeatedly laminating Si ₃ N ₄ and parylene according to an embodiment of the present invention, (400 ~ 700nm) - Incidence angle (0 ~ 50 °) The average reflectivity is calculated.
FIG. 3 is a graph showing the relationship between the wavelength-incident angle of TiO ₂ and parylene deposited on five layers in a thin film encapsulation unit fabricated by repeatedly laminating TiO ₂ and parylene according to an embodiment of the present invention, The average reflectivity is calculated.
4 is a cross-sectional view of a thin film encapsulation unit according to another embodiment of the present invention.
5 is in the thin film sealing unit made of high-pass-filter structure using a Si ₃ N ₄ and the parylene According to another embodiment, the wavelength of the thickness of the Si3N4 and parylene laminated in a total of nine layer-average angle of incidence It is a graph that calculates the reflectivity.
FIG. 6 is a graph showing the relationship between the wavelength-incident angle average reflectance of TiO ₂ and parylene deposited on nine layers in a thin film encapsulation unit fabricated using a high-pass filter structure using TiO ₂ and parylene according to another embodiment of the present invention Is calculated according to the number of layers.
7 is a graph showing the reflectivity of a conventional thin film encapsulating unit (inorganic material 100 nm + parylene 1000 nm), the optical Bragg grating structure of the thin film encapsulation unit according to the embodiment of the present invention, and the minimum wavelength- It is a graph calculated according to the number of layers.

Hereinafter, embodiments of the present invention will be described in detail. However, the present invention is not limited thereto, and the present invention is only defined by the scope of the following claims.

In order to clearly illustrate the present invention, parts not related to the description are omitted, and the same or similar components are denoted by the same reference numerals throughout the specification.

In addition, since the sizes and thicknesses of the respective components shown in the drawings are arbitrarily shown for convenience of explanation, the present invention is not necessarily limited to those shown in the drawings.

In the drawings, the thickness is enlarged to clearly represent the layers and regions. In the drawings, for the convenience of explanation, the thicknesses of some layers and regions are exaggerated. It will be understood that when a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the other portion "directly on" but also the other portion in between.

Also, throughout the specification, the term "on " means to be located above or below a target portion, and does not necessarily mean that the target portion is located on the image side with respect to the gravitational direction.

One embodiment of the present invention is a thin film encapsulation unit provided on a substrate of an organic solar battery, comprising: a first thin film formed on the substrate and composed of any one of a high refractive index material and a low refractive index material; And a second thin film formed on the first thin film and composed of another one of a high refractive index material and a low refractive index material, wherein the thickness of the first thin film and the second thin film is adjusted to form a photonic band gap Band gap structure.

First, the substrate is a sapphire substrate, a glass substrate. A silicon substrate on which an insulating layer is deposited, a polymer substrate, or a metal substrate.

Here, the polymer substrate may be formed of at least one selected from the group consisting of polyethylene (PE), polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), polyethylenenaphthalate (PEN), polyarylate PES), and the like.

The metal substrate may include stainless steel (SUS), aluminum (Al), copper (Cu), or the like.

The high refractive index material may be an inorganic material or an organic material.

At this time, the inorganic material is a metal oxide including _{Al 2 O 3, SiO 2,} B 2 O5, TiO 2, SnO 2, ZnO, In 2 O 3, ZrO 2, GeO 2, AlSiO x , and the like; AlN, a metal nitride including _{Si 3 N 4, TiN, ZrN} , BN and the like; Metal oxynitrides including AlON, SiON, AlSiON and the like; And an oxide including InSnO, SiZnO, InZnO, InGaZnO, and the like; Or more.

As a method for coating the inorganic material, a sputtering deposition method, an electron beam deposition method, a thermal deposition method, an atomic layer deposition (ALD), a plasma enhanced chemical vapor deposition (PECVD), a pulsed laser deposition (PLD), an ion beam deposition .

As a method for the coating, a co-deposition process such as co-sputtering, co-PLD, co-IBD, etc. may be used have.

On the other hand, the organic material may include epoxy; Silicone; Acrylic resin; Polyurethane; Parylene; And groups comprising -N, -C, -D, or -HT; Or more.

At this time, vapor deposition, thermal deposition, spin coating, inkjet printing, screen printing, doctor blading, polymer polymerization, and the like can be used for the coating of the organic material.

Meanwhile, the photonic bandgap structure may include a Bragg grating, a high-pass filter, and a low-pass filter structure. A more detailed description thereof will be described later.

As described above, when the thin film encapsulation unit according to an embodiment of the present invention is applied to an organic solar cell, there is an advantage that the transmittance can be increased with respect to a wide effective absorption wavelength region and an incident angle of sunlight.

Hereinafter, the thin-film encapsulating unit according to various embodiments of the present invention and a method of manufacturing the same will be described in detail with reference to the drawings.

1 is a cross-sectional view of a thin film encapsulating unit 201 according to an embodiment of the present invention.

1, a thin film encapsulating unit 201 according to an embodiment of the present invention includes a first thin film 211 formed on a substrate (not shown) and composed of a high refractive index material, And a second thin film 212 formed of a low refractive index material.

At this time, the first thin film 211 and the second thin film 212 are repeatedly laminated in this order on the second thin film 212, An Nth thin film (where N is an integer of 3 or more) may be formed, in which case the first to Nth thin films form a light-Bragg grating structure.

Here, the optical Bragg grating is a lattice structure having a condition (maximizing interference) that a diffracted ray can exist at a maximum when a ray is irradiated to a certain three-dimensional solid crystal, and selectively reflects light of a specific wavelength according to the change period of the refractive index There is a characteristic of reflection or removal.

In order to form the optical Bragg grating structure in the thin film encapsulation unit 201 according to one embodiment of the present invention, a first thin film 211 composed of a high refractive index material is formed on a substrate (not shown) (= Lambda / 4n, n: refractive index of the thin film) of the target wavelength, that is, a quarter of the effective absorption wavelength (?) Of sunlight.

In the case where the high refractive index material is an inorganic substance, the deposition method may be a sputtering deposition method, an electron beam deposition method, a thermal deposition method, an atomic layer deposition (ALD), a plasma enhanced chemical vapor deposition (PECVD), a pulsed laser deposition (PLD) Co-deposition processes such as ion beam deposition (IBD), co-sputtering, co-pulsed laser deposition (co-PLD), and co-IBD .

At this time, since the effective absorption wavelength (?) Of sunlight includes approximately 290 to 4,000 nm, the deposition thickness may vary depending on the refractive index n of the high refractive index material used. However, the thin film encapsulation unit It is preferable that the deposition thickness of the first thin film 211 in the substrate 201 is in the range of 100 nm to 1,000 nm.

If the deposition thickness of the first thin film 211 is less than 100 nm, a required encapsulation effect can not be obtained. If the deposition thickness is more than 1,000 nm, the light transmittance is lowered as the thickness of the first thin film 211 increases, There is a problem in that it is impossible to obtain an improvement in light transmittance due to the interference effect.

When a first thin film 211 made of a high refractive index material is deposited on a substrate (not shown), a second thin film 212 made of a low refractive index material is formed on the first thin film 211 to have a target wavelength, (= Λ / 4n, n: refractive index of the thin film) of the effective absorption wavelength (λ).

In the case where the low refractive index material is an organic material, vapor deposition, thermal deposition, spin coating, inkjet printing, screen printing, doctor blading, polymer polymerization, or the like may be used as the deposition method.

In this case, since the effective absorption wavelength (?) Of sunlight includes approximately 290 to 4,000 nm, the deposition thickness may vary depending on the refractive index n of the low refractive index material used. However, the thin film encapsulation unit 201 preferably has a thickness in the range of 200 nm to 1,000 nm.

If the thickness of the second thin film 212 composed of the low refractive index material is less than 200 nm, a desired encapsulation effect can not be obtained. If the thickness is more than 1,000 nm, There is a problem that the transmittance is lowered and the improvement in light transmittance due to the interference effect can not be obtained.

Also, the third, fourth ... A Bragg grating structure having a photonic band gap (PBG) can be formed by repeatedly performing the deposition process for the Nth thin film (where N is an integer of 3 or more).

In this case, in one embodiment of the present invention, the first thin film 211 is made of an inorganic material, the second thin film 212 is made of an organic material, and the third to Nth thin films are composed of an inorganic material and an organic material However, the present invention is not limited thereto.

2 is in the Si ₃ N ₄ and the parylene films sealing unit forming the optical Bragg grating structure by repeatedly laminating the (parylene), according to one embodiment of the invention, and each of the five layers of Si ₃ N ₄ stacked in Wavelength (400 ~ 700nm) according to thickness of parylene - Incidence angle (0 ~ 50 °)

2, Si ₃ N ₄ was used as a high refractive index material and parylene was used as a low refractive index material.

Referring to FIG. 2, it can be seen that the average reflectivity of wavelength-incident angle varies depending on the thickness of each material.

More specifically, it can be seen that when the thickness of Si ₃ N ₄ is 100 to 150 nm and the thickness of parylene is in the range of 150 to 200 nm, it exhibits a relatively low wavelength-incident angle average reflectivity of about 10%. If the thickness of Si ₃ N ₄ is thin, the moisture permeability may be lowered.

Figure 3 according to one embodiment of the invention TiO ₂ and parylene (parylene) cost in forming an optical Bragg grating structure by repeated lamination of a thin-film sealing unit, each stacked in five layers TiO ₂ with parylene thickness And the average reflectivity of the incident angle according to the wavelength.

In this case, TiO ₂ was used as a high refractive index material and parylene was used as a low refractive index material in FIG. 3.

Referring to FIG. 3, it can be seen that the average reflectivity of the wavelength-incident angle changes depending on the thickness of each material. More specifically, it can be seen that the reflectivity is higher on average than the case where the inorganic layer is Si ₃ N ₄ . The TiO ₂ -parlyene system shows a relatively low average wavelength-incident angle reflectivity of about 15% when the thickness of TiO ₂ is 80-120 nm and the thickness of parylene is in the range of 150-200 nm.

4 is a cross-sectional view of a thin film encapsulation unit 202 according to another embodiment of the present invention.

Referring to FIG. 4, the thin film encapsulation unit 202 according to another embodiment of the present invention includes a first thin film 221 formed on a substrate (not shown) and made of a low refractive index material, And a second thin film 222 made of a high refractive index material.

In this case, the first thin film 221 and the second thin film 222 are repeatedly laminated in this order on the second thin film 222 to form third, fourth, An Nth thin film (where N is an integer of 3 or more) may be formed, and the first to Nth thin films may form a high-pass filter structure.

Here, the high-pass filter structure has a characteristic in which a frequency band higher than a given cutoff frequency is passed, and a frequency band lower than the cutoff frequency is attenuated.

In order to form a high-pass filter structure in the thin film encapsulation unit 202 according to another embodiment of the present invention, a first thin film 221 composed of a low-index material is formed on a substrate (not shown) (=? / 8n, n: refractive index of the thin film) of the target wavelength, that is, one-eighth thickness (=? / 8n) of the effective absorption wavelength? Of the sunlight.

When a first thin film 221 made of a low refractive index material is deposited on a substrate (not shown), a second thin film 222 composed of a high refractive index material as in the optical Bragg grating structure is formed on the first thin film 221 The third thin film 223 made of a low refractive index material is deposited at a target wavelength, that is, a 1/4 thickness (=? / 4n, n: refractive index of the thin film) of effective absorption wavelength? Of sunlight.

On the third thin film 223 made of a low refractive index material, a fourth thin film 224 made of a high refractive index material and a fifth thin film 225 made of a low refractive index material are formed on the third thin film 223 made of 4 (PBG, Photonic Band Gap) by repeating deposition with a thickness of 1 / min (= λ / 4n, n: refractive index of the thin film) and one eighth of thickness (= λ / 8, n: refractive index of the thin film) And may be formed in a high-pass filter structure.

FIG. 5 is a graph showing a relationship between a total of nine layers of Si ₃ N ₄ and parylene in a thin film encapsulation unit in which a high-pass filter structure is formed using Si ₃ N ₄ and parylene according to another embodiment of the present invention. The average reflectivity of the wavelength-incident angle according to the thickness of the light-emitting layer.

5, Si ₃ N ₄ was used as a high refractive index material and parylene was used as a low refractive index material.

Referring to FIG. 5, it can be seen that the overall reflectivity is lower than that of the thin film encapsulation unit fabricated with the optical Bragg grating structure. More specifically, it can be seen that the reflectance at Si ₃ N ₄ of 100 to 150 nm and the reflectance of parylene at 150 to 200 nm is as low as about 5%, which is a thickness range having a relatively low reflectivity.

FIG. 6 is a graph showing the relationship between thicknesses of TiO ₂ and parylene in a total of nine layers in a thin film encapsulation unit in which a high-pass filter structure is formed using TiO ₂ and parylene according to another embodiment of the present invention. Wavelength-incident angle average reflectivity according to the number of layers.

In this case, TiO ₂ was used as a high refractive index material and parylene was used as a low refractive index material in FIG.

Referring to FIG. 6, it can be seen that the overall reflectivity is lower than that of the thin film encapsulation unit fabricated with the optical Bragg grating structure. More specifically, it can be seen that the reflectivity at a thickness range of relatively low reflectivity, that is, TiO ₂ of 80 to 120 nm and parylene of 150 to 200 nm is also as low as about 5%.

On the other hand, FIG. 7 shows the reflectance of a conventional thin film encapsulating unit (inorganic material 100 nm + parylene 1000 nm), the optical Bragg grating structure of the thin film encapsulating unit (inorganic material 100 nm + parylene 1000 nm) The average reflectivity of the lowest wavelength - incident angle is calculated according to the number of layers.

Referring to FIG. 7, in the case of the thin film encapsulation unit fabricated with the optical Bragg grating structure as compared with the conventional thin film encapsulation unit, the reflectance of the wavelength and the incident angle is low even though the number of repeated layers increases. However, considering that the number of repeating layers should be at least 10 layers in order to lower the moisture permeability, the optical Bragg grating structure having a reflectivity of 10% or more has a large optical loss.

In the case of the thin film encapsulation unit fabricated with the high-pass filter structure, even when the number of repeating layers is increased, the average reflectance of the wavelength-incident angle is adjusted to 5% or less, so that effective light transmission and low moisture permeability can be obtained at the same time.

Although not shown in the drawings, the thin film encapsulation unit according to another embodiment of the present invention includes a first thin film formed on a substrate (not shown) and composed of a high refractive index material, A second thin film made of a low refractive index material, and a third thin film formed by repeatedly laminating the first thin film and the second thin film in this order. N thin films (where N is an integer of 3 or more), and the first to Nth thin films may form a low-pass filter structure.

Here, the low-pass filter structure has a characteristic in which a frequency band lower than a given cutoff frequency is passed, and a higher frequency band is blocked.

Hereinafter, examples and comparative examples of the present invention will be described. However, the following examples are only illustrative of the present invention and are not intended to limit the scope of the present invention.

Example

Soda lime glass was used as the substrate on which the thin film encapsulation unit according to one embodiment was provided. The glass was washed in the order of acetone, isopropyl alcohol (IPA), and deionized water (DI).

Parylene was deposited on the cleaned glass to the designed thickness using a parylene-coater.

More specifically, a parylene-C dimer was used to deposit parylene and the temperature of the vaporizer was maintained at 175 DEG C for thermal decomposition. The parylene-carbon, which has undergone the polymerization reaction through the furnace at 690 ° C., is transferred to a chamber at room temperature, 25 mTorr, and deposited on the substrate.

Since the thickness of the parylene deposited was proportional to the mass of parylene introduced, 375 mg and 400 mg of parylene were added to deposit parylene of 75 nm (0.5 L) and 150 nm (L), respectively.

Titanium dioxide (TiO ₂ ) was deposited on the deposited parylene film by RF (radio-frequency) magnetron sputtering to the designed thickness.

To deposit titanium dioxide, atmospheric pressure, 4.4 mTorr pressure, argon 20 sccm, and oxygen 1 sccm were maintained. The thickness of the titanium dioxide is determined by the deposition time, and the time taken to deposit 100 nm is about 20 minutes.

Structure of filter

The simplest type of periodic multilayer film is a quarter-wave (λ / 4) laminate, stacked alternately several layers of quarter wavelength thick. Is a structure of "substrate - (HL) ⁿ - atmosphere (H: high refractive index material, L: low refractive index material)" and a reflection bandwidth is formed based on the central wavelength. This reflection bandwidth is determined by the ratio of the low refractive index material to the high refractive index material. On both sides of the reflection bandwidth, there is a band having a relatively low reflectivity.

1. High-pass filter ( high - pass filter )

In order to reduce the reflection band existing on the short wavelength side based on the reflection bandwidth, the thickness of the thin film composed of the low refractive material existing at both ends in the laminated structure can be reduced to one-eighth wavelength thickness.

Is a structure of "substrate - (0.5L) (HL) ⁿ H (0.5L) - air", which is called a high-pass filter because it has an effect of increasing the transmittance to a short wavelength, that is, a high frequency.

2. Low pass filter ( low - pass filter )

The thickness of the high refractive index thin film existing at both ends in the laminated structure can be reduced to one-eighth wavelength thickness in order to reduce the reflection band existing on the longer wavelength side based on the reflection bandwidth.

Is a structure of "substrate - (0.5H) (LH) ⁿ L (0.5H) - air", which is called a low-pass filter because it has an effect of increasing the transmittance to a long wavelength, that is, a low frequency.

3. Band-pass filter ( band - pass filter )

When a reflection filter in which a periodic multilayer thin film (quarter wavelength layer) is laminated is formed on both sides of a certain spacing layer, a filter selectively transmitting only one wavelength can be formed.

In general, the spacing layer is composed of the material used for the multilayer film, and its thickness is doubled, i.e., a half wavelength (lambda / 2). Therefore, it has a structure of "substrate-HLHL (HH) LHLH-atmosphere" or "substrate-HLH (LL) HLH-atmosphere" and has a high transmittance only at wavelength λ.

According to the present invention having the above-described structure, it is possible to realize a thin film encapsulation unit having a low water permeability (WVTR) and an oxygen permeability (OTR) and a high light transmittance, And a method of manufacturing the same.

It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims. As will be understood by those skilled in the art. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive.

201, 202: Thin film sealing unit
211, 221: first thin film 212, 222: second thin film
223: third thin film 224: fourth thin film
225: fifth thin film

Claims (22)

A thin film encapsulation unit provided on a substrate of an organic solar battery,
A first thin film positioned on the substrate and composed of any one of a high refractive index material and a low refractive index material; And
And a second thin film formed on the first thin film and composed of another one of a high refractive index material and a low refractive index material,
Wherein the thickness of the first thin film and the second thin film is adjusted to have a photonic band gap (PBG) structure.
The method according to claim 1,
Wherein the substrate is a sapphire substrate, a glass substrate. A thin film encapsulating unit comprising a silicon substrate, a polymer substrate, or a metal substrate on which an insulating layer is deposited.
The method according to claim 1,
Wherein the high refractive index material is an inorganic or organic material.
The method according to claim 1,
Wherein the low refractive index material is an inorganic substance or an organic substance.
The method according to claim 3 or 4,
The inorganic material
_{Al 2 O 3, SiO 2,} B 2 O5, TiO 2, SnO 2, ZnO, In 2 O 3, ZrO 2, GeO 2, or a metal oxide including AlSiO _x;
AlN, a metal nitride including _{Si 3 N 4, TiN, ZrN} , or BN;
Metal oxynitrides including AlON, SiON, or AlSiON; And
An oxide comprising InSnO, SiZnO, InZnO or InGaZnO; Wherein the thin film encapsulation unit is a thin film encapsulation unit.
The method according to claim 3 or 4,
The organic material may be epoxy; Silicone; Acrylic resin; Polyurethane; Parylene; And a group comprising -N, -C, -D, or -HT; Wherein the thin film encapsulation unit is a thin film encapsulation unit.
The method according to claim 1,
A thin film composed of any one of the high refractive index material and the low refractive index material and the other one of the high refractive index material and the low refractive index material is repeatedly laminated on the second thin film to form another thin film of the high refractive index material or the low refractive index material A third, a fourth, or a fifth thin film composed of the first, the second, and the third thin film.
8. The method of claim 7,
Wherein the photonic bandgap structure is a Bragg grating, a high-pass filter, or a low-pass filter structure.
9. The method of claim 8,
The Bragg grating structure may be formed by,
Wherein the thin film including the first thin film and the second thin film has a thickness of? / 4n (where n is the refractive index of the thin film) with respect to the effective absorption wavelength?.
10. The method of claim 9,
Wherein the thickness of the first or second thin film made of the high refractive index material is 100 nm to 1,000 nm.
10. The method of claim 9,
Wherein the thickness of the first or second thin film made of the low refractive index material is 200 nm to 1,000 nm.
9. The method of claim 8,
The high-pass filter structure or the low-pass filter structure may be formed by, for example,
Wherein the thickness of the first thin film is? / 8n (where n is the refractive index of the thin film) with respect to the effective absorption wavelength?, The thickness of the second thin film and the third thin film is? / 4n, Wherein the thickness of the thin film and the fifth thin film is lambda / 8n.
13. The method of claim 12,
Wherein the thickness of the first or second thin film made of the high refractive index material is 100 nm to 1,000 nm.
13. The method of claim 12,
Wherein the thickness of the first or second thin film made of the low refractive index material is 200 nm to 1,000 nm.
The method according to claim 1,
A film sealing unit having a moisture permeability of 10 ^-5 g / m ² / day or less and a light transmittance of 90% or more.
A manufacturing method of a thin film encapsulation unit formed on a substrate of an organic solar battery,
Forming a first thin film made of any one of a high refractive index material and a low refractive index material on the substrate to a thickness of? / 4n or? / 8n (where n is a refractive index of the thin film) of an effective absorption wavelength?
A second thin film composed of the other one of the high refractive index material and the low refractive index material and a third thin film composed of any one of the high refractive index material and the low refractive index material are formed on the first thin film at a thickness of? / 4n of the effective absorption wavelength? ; And
A fourth thin film composed of the other one of the high refractive index material and the low refractive index material and a fifth thin film composed of any one of the high refractive index material and the low refractive index material are formed on the third thin film by lambda / 4n or lambda / 8n < / RTI >
Wherein the thin film encapsulation unit comprises:
(Where N is an integer of 3 or more)
17. The method of claim 16,
Wherein the high refractive index material is an inorganic substance or an organic substance.
17. The method of claim 16,
Wherein the low refractive index material is an inorganic substance or an organic substance.
The method according to claim 17 or 18,
The first or second thin film composed of the inorganic material may be formed by a sputtering method, an electron beam evaporation method, a thermal evaporation method, an atomic layer deposition (ALD), a plasma enhanced chemical vapor deposition (PECVD), a pulsed laser deposition (PLD) Wherein the thin film encapsulation unit is formed by a method comprising the steps of:
The method according to claim 17 or 18,
The first or second thin film composed of the inorganic material may be co-deposited, including co-sputtering, co-PLD, or co-IBD, Wherein the thin film encapsulation unit is formed by a process.
The method according to claim 17 or 18,
Wherein the first or second thin film composed of the organic material is formed by vapor deposition, thermal deposition, spin coating, inkjet printing, screen printing, doctor blading, or polymer polymerization.
17. The method of claim 16,
A moisture permeability of 10 ^-5 g / m ² / day or less, and a light transmittance of 90% or more.

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