KR20150111018A - Sputtering target assembly and method of manufacturing the same - Google Patents

Sputtering target assembly and method of manufacturing the same Download PDF

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Publication number
KR20150111018A
KR20150111018A KR1020140034220A KR20140034220A KR20150111018A KR 20150111018 A KR20150111018 A KR 20150111018A KR 1020140034220 A KR1020140034220 A KR 1020140034220A KR 20140034220 A KR20140034220 A KR 20140034220A KR 20150111018 A KR20150111018 A KR 20150111018A
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KR
South Korea
Prior art keywords
target
backing tube
coating layer
diameter portion
bonding
Prior art date
Application number
KR1020140034220A
Other languages
Korean (ko)
Inventor
김주호
박동용
Original Assignee
(주)태광테크
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Publication date
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Priority to KR1020140034220A priority Critical patent/KR20150111018A/en
Publication of KR20150111018A publication Critical patent/KR20150111018A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles

Abstract

The present invention relates to a sputtering target assembly and a manufacturing method thereof, wherein a target is assembled without leaning to one side or being pushed to one side during an assembly of the target to a backing tube, and a non-coupling part not generated during the coupling of the target to the backing tube by melting and coupling coupling coating layers after forming the coupling coating layers on an outer diameter part of the backing tube and an inner diameter part of the target respectively. The method to manufacture a sputtering target assembly comprises: (S1) a step of preparing a backing tube and a cylindrical target to be inserted into the outer diameter part of the backing tube; (S2) a step of forming a first coupling coating layer and a second coupling coating layer on the outer diameter part of the backing tube and the inner diameter part of the target respectively; (S3) a step of inserting the inner diameter part of the target into the outer diameter part of the backing tube; and (S4) a step of coupling the backing tube to the target by melting and coupling the first coupling coating layer and the second coupling coating layer.

Description

[0001] SPUTTERING TARGET ASSEMBLY AND METHOD OF MANUFACTURING THE SAME [0002]

The present invention relates to a sputtering target assembly and a method of manufacturing the same, and more particularly, to a sputtering target assembly capable of uniformly adhering a backing tube and a target as a whole, and a method of manufacturing the same.

Generally, a sputtering method generates a glow discharge by applying a direct current (DC) or high frequency (RF) voltage to a cathode including a sputtering target while introducing an inert gas such as argon (Ar) Thereby forming a film.

Since the film formed by such a sputtering method has a strong adhering force, is easily controlled in film thickness, is excellent in reproducibility in thinning of an alloy, and is easy to make a thin film of a high melting point material, Such as a transparent conductive film for a liquid crystal display, a recording layer of a hard disk, and a wiring material for a semiconductor memory.

On the other hand, the sputtering target assembly used in the sputtering method is divided into a flat plate type and a cylindrical type. Recently, the sputtering target assembly has a higher use efficiency (70%) as compared with a plate type having a low use efficiency (20 to 30% A cylindrical shape capable of achieving a high film forming speed is mainly used.

The cylindrical sputtering target assembly is composed of a cylindrical backing tube, a cylindrical target that is spaced apart from the outer surface of the backing tube, and a joint formed between the backing tube and the target to bond the target to the backing tube . In this case, as a bonding material forming the bonding portion, indium metal is used to effectively dissipate the heat generated during sputtering. The bonding layer of indium metal is formed by filling the molten indium between the backing tube and the target, And then applying indium to the backing tube.

However, as the length of the cylindrical sputtering target assembly becomes longer, unbonded portions are generated between the backing tube and the target due to warping of the backing tube. In particular, since the target made of a ceramic material has low affinity with indium, There is a problem that the quality of the sputtering target assembly to be manufactured is deteriorated due to the increased defective bonding between the tube and the target.

Related Prior Art Korean Patent Publication No. 2011-0120305 (published on Mar. 11, 2011, entitled "Tube Target") is available.

The present invention is characterized in that a bonding coating layer is respectively formed on the outer diameter portion of the backing tube and the inner diameter portion of the inner diameter portion of the target and then the bonding coating layer is fusion bonded so that the target is assembled on one side of the backing tube, The present invention also provides a sputtering target assembly and a method of manufacturing the sputtering target assembly.

The technical objects to be achieved by the present invention are not limited to the above-mentioned technical problems.

According to a first aspect of the present invention, there is provided a method of manufacturing a sputtering target assembly, comprising: preparing a cylindrical target to be inserted into an outer diameter portion of a backing tube and a backing tube; (S2) forming a first bonding coating layer and a second bonding coating layer on the outer diameter portion of the backing tube and the inner diameter portion of the target, respectively; Inserting the inner diameter portion of the target into the outer diameter portion of the backing tube (S3); And (S4) melt bonding the first bonding coating layer and the second bonding coating layer to bond the backing tube and the target.

Preferably, the first bonding coating layer and the second bonding coating layer in step S2 may be formed by spraying indium (In) powder onto the outer diameter portion of the backing tube and the inner diameter portion of the target using a low temperature spray coating equipment.

More preferably, the indium (In) powder may have a particle size of 10 to 200 mu m.

A sputtering target assembly according to a second embodiment of the present invention is a sputtering target assembly comprising: a backing tube having a first bonding coating layer formed on an outer diameter portion thereof; A target inserted into the outer diameter portion of the backing tube and having a second bonding coating layer formed on the inner diameter portion; And a bonding portion for bonding the target to the backing tube after the first bonding coating layer and the second bonding coating layer facing each other are melted and bonded.

As described above, according to the present invention, the first bonding coating layer is formed on the outer diameter portion of the backing tube, the second bonding coating layer is formed on the inner diameter portion of the target, and then the first bonding coating layer and the second bonding coating layer are bonded, There is an advantage that the unbonded portion is not generated when the backing tube and the target are bonded, thereby ensuring the bonding integrity.

The present invention also has the advantage that the first bonding coating layer is formed on the outer diameter portion of the backing tube and the second bonding coating layer is formed on the inner diameter portion of the target to allow the backing tube to be assembled to the backing tube in a radial direction have.

1 is a flowchart illustrating a method of manufacturing a sputtering target assembly according to the present invention,
FIG. 2 is an exploded perspective view of the sputtering target assembly according to the present invention, and FIG.
3 is a cross-sectional view of the sputtering target assembly shown in FIG.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the same components are denoted by the same reference symbols whenever possible. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail.

1 is a flowchart illustrating a method of manufacturing a sputtering target assembly according to the present invention.

In order to manufacture the sputtering target assembly 100 according to the present invention, first, a cylindrical target 120 inserted at intervals in the outer diameter portion of the backing tube 110 and the backing tube 110 is prepared (step S1).

The backing tube 110 is for supporting the target 120. The backing tube 110 may be made of a material having a high thermal conductivity and being light and excellent in rigidity, preferably stainless steel or aluminum. More preferably, the backing tube 110 may be made of Gr2 titanium (Ti).

Further, the backing tube 110 may be formed in any one of a normal tubular shape having both open ends and an empty interior, or a tubular shape having both ends closed, or a tubular shape having one end opened and the other end closed. It should be noted that the cross-sectional shape of the backing tube 110, that is, the shape of the inner diameter portion and the outer diameter portion of the backing tube 110 is not limited to a circular shape as shown in FIGS.

On the other hand, the target 120 forms a film on the film formation body, and the target 120 is inserted and supported by the outer diameter portion of the backing tube 110 as shown in the figure. To this end, the target 120 has both ends open and a hollow interior. The target 120 has an inner diameter portion having a shape corresponding to the cross-sectional shape of the outer diameter portion of the backing tube 110. The target 120 has an outer diameter portion that is circular in sectional shape. The inner diameter portion of the target 120 is formed to be larger than the outer diameter portion of the backing tube 110 so that the bonding material is filled between the outer diameter portions of the backing tube 110 to form the bonding portion 130. The outer diameter of the target 120 can be adjusted according to the size of the sputtering equipment, and the length of the target 120 can be variously adjusted according to an area where the sputtering is performed.

The target 120 may be formed of indium (In), tin (Sn), zinc (Zn), copper (Cu), aluminum (Al), tantalum (Ta), niobium (Ti) or the like, or a ceramic material such as ITO (Indium Tin Oxide), AZO (Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), Al2O3, or the like.

Here, the manufacture of the backing tube 110 and the target 120 is well known in the art, and a detailed description thereof will be omitted.

When the backing tube 110 and the target 120 are prepared (S1) as described above, the first bonding coating layer 112 and the second bonding coating layer 112 are formed on the outer diameter portion of the prepared backing tube 110 and the inner diameter portion of the target 120, 2 bonding coating layer 122 is formed (step S2).

The first and second bonding coating layers 112 and 122 allow the target 120 to be assembled to the backing tube 110 such that the target 120 is radially unilaterally assembled to one side and the backing tube 110 Of the outer diameter portion of the target 120 and the inner diameter portion of the target 120. [

The first and second bonding coating layers 112 and 122 are formed on the outer circumferential portion of the backing tube 110 and the outer circumferential portion of the target 120 by using metal powder, for example, indium (In) The length of the thickness of the first and second bonding coating layers 112 and 122 is equal to the length of the gap between the backing tube 110 and the target 120 (typically 1 mm) Length.

For example, the length of the gap between the backing tube 110 and the target 120 is 1 mm, and the first and second bonding coating layers 112 and 122 may each have a thickness of 0.5 mm, The thicknesses of the first and second bonding coating layers 112 and 122 are set so that the thickness of the first bonding coating layer 112 and the thickness of the second bonding coating layer 112 do not exceed the length of the gap between the backing tube 110 and the target 120 Changes may be made within a wide range.

The indium (In) powder used for forming the first and second bonding coating layers 112 and 122 has a particle size of 10-200 탆. When the particle size of the indium (In) powder is less than 10 탆, And the thickness of the first and second bonding coating layers 112 and 122 is not only not only difficult to assemble in a process (step 3) to be described later, There is a possibility that the target 120 and the backing tube 110 may be unfilled during the heat treatment in step S4. If the particle size of the indium (In) powder exceeds 200 탆, the backing tube 110 and the target 120 As well as the surface roughness can be increased.

As described above, when the first and second bonding coating layers 112 and 122 are formed on the outer diameter portion of the backing tube 110 and the inner diameter portion of the target 120 (S2), the outer diameter portion of the backing tube 110 In the present invention, in which the target 120 is assembled with the inner diameter portion (Step S3), the first and second bonding coating layers 112 and 122 are fusion-bonded to each other to bond the backing tube 110 and the target 120 The sputtering target assembly 100 is completed (step S4).

Here, the melting of the first and second bonding coating layers 112 and 122 is performed by a conventional heat treatment equipment for heat-treating the rotary target, and the backing tube 110 and the target 120 assembled in the heat treatment equipment are charged The first and second bonding coating layers 112 and 122 are melted by heating at a temperature of 250 DEG C or less within 1 hour. When the operation of the heat treatment apparatus is stopped, the molten first and second bonding coating layers 112 and 122 are hardened and bonded to each other.

In other words, the first and second bonding coating layers 112 and 122 are fused to each other, and are joined to each other to form the bonding portion 130, thereby joining the outer diameter portion of the backing tube 110 and the inner diameter portion of the target 120.

2 and 3, the sputtering target assembly 100 manufactured by the above-described manufacturing method includes a backing tube 110 having a first bonding coating layer 112 formed on an outer diameter portion thereof, a backing tube 110 having a backing tube 110, A target 120 having a second bonding coating layer 122 formed on an inner diameter portion thereof and a first bonding coating layer 112 and a second bonding coating layer 122 facing each other are melted and bonded to each other, And a bonding portion 130 for bonding the target 120 to the tube 110.

The sputtering target assembly 100 according to the present invention is formed by forming a first bonding coating layer 112 on the outer diameter portion of the backing tube 110 and forming a second bonding coating layer 122 on the inner diameter portion of the target 120 The first bonding coating layer 112 and the second bonding coating layer 122 are fused to each other so that unbonded portions are not generated when the backing tube 110 and the target 120 are bonded to each other,

The sputtering target assembly 100 according to the present invention can be manufactured by forming the first bonding coating layer 112 on the outer diameter portion of the backing tube 110 and forming the second bonding coating layer 122 on the inner diameter portion of the target 120, Allowing the target 120 to be assembled in a radially unilateral manner when the target 120 is assembled to the backing tube 110.

The sputtering target assembly and the method of manufacturing the same according to the present invention are not limited to the configuration and operation of the embodiments described above. The above embodiments may be configured so that all or some of the embodiments may be selectively combined to make various modifications.

100: sputtering target assembly 110: backing tube
112: first bonding coating layer 120: target
122: second bonding coating layer 130: bonding portion

Claims (5)

Preparing a backing tube, and a cylindrical target to be inserted into an outer diameter portion of the backing tube (S1);
(S2) forming a first bonding coating layer and a second bonding coating layer on the outer diameter portion of the backing tube and the inner diameter portion of the target, respectively;
Inserting the inner diameter portion of the target into the outer diameter portion of the backing tube (S3); And
(S4) melting and bonding the first bonding coating layer and the second bonding coating layer to bond the backing tube and the target. [5] The method of manufacturing a sputtering target assembly according to claim 1,
The method according to claim 1,
Wherein the first bonding coating layer and the second bonding coating layer in the step (S2)
Wherein the indium (In) powder is sprayed onto the outer diameter portion of the backing tube and the inner diameter portion of the target using a low temperature spray coating equipment.
The method of claim 2,
The indium (In)
Wherein the sputtering target assembly has a particle size of 10 to 200 mu m.
In a sputtering target assembly,
A backing tube having a first bonding coating layer formed on an outer diameter portion thereof;
A target inserted into the outer diameter portion of the backing tube and having a second bonding coating layer formed on the inner diameter portion; And
And a bonding portion for bonding the first bonding coating layer and the second bonding coating layer facing each other and then bonding the target to the backing tube.
The method of claim 4,
Wherein the first bonding coating layer and the second bonding coating layer are formed on the substrate,
And spraying indium (In) powder onto the outer diameter portion of the backing tube and the inner diameter portion of the target using a low temperature spray coating equipment.
KR1020140034220A 2014-03-24 2014-03-24 Sputtering target assembly and method of manufacturing the same KR20150111018A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020140034220A KR20150111018A (en) 2014-03-24 2014-03-24 Sputtering target assembly and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020140034220A KR20150111018A (en) 2014-03-24 2014-03-24 Sputtering target assembly and method of manufacturing the same

Publications (1)

Publication Number Publication Date
KR20150111018A true KR20150111018A (en) 2015-10-05

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