KR20150102732A - 양이온 투과성 배리어를 이용하여 다중-성분 솔더를 전기 화학적으로 증착하기 위한 방법들 - Google Patents

양이온 투과성 배리어를 이용하여 다중-성분 솔더를 전기 화학적으로 증착하기 위한 방법들 Download PDF

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Publication number
KR20150102732A
KR20150102732A KR1020150028235A KR20150028235A KR20150102732A KR 20150102732 A KR20150102732 A KR 20150102732A KR 1020150028235 A KR1020150028235 A KR 1020150028235A KR 20150028235 A KR20150028235 A KR 20150028235A KR 20150102732 A KR20150102732 A KR 20150102732A
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KR
South Korea
Prior art keywords
processing
processing fluid
ion
electrolyte
ions
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KR1020150028235A
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English (en)
Korean (ko)
Inventor
마빈 엘. 베른트
로스 쿨저
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20150102732A publication Critical patent/KR20150102732A/ko

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/002—Cell separation, e.g. membranes, diaphragms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020150028235A 2014-02-28 2015-02-27 양이온 투과성 배리어를 이용하여 다중-성분 솔더를 전기 화학적으로 증착하기 위한 방법들 KR20150102732A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/194,591 US20150247251A1 (en) 2014-02-28 2014-02-28 Methods for electrochemical deposition of multi-component solder using cation permeable barrier
US14/194,591 2014-02-28

Publications (1)

Publication Number Publication Date
KR20150102732A true KR20150102732A (ko) 2015-09-07

Family

ID=53946088

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150028235A KR20150102732A (ko) 2014-02-28 2015-02-27 양이온 투과성 배리어를 이용하여 다중-성분 솔더를 전기 화학적으로 증착하기 위한 방법들

Country Status (5)

Country Link
US (1) US20150247251A1 (zh)
KR (1) KR20150102732A (zh)
CN (1) CN104878420A (zh)
SG (1) SG10201500966QA (zh)
TW (1) TW201533279A (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020045367A1 (ja) * 2018-08-28 2020-03-05 学校法人工学院大学 金属膜形成用組成物の製造方法、金属膜の製造方法、金属膜、金属膜積層体及び金属膜形成用組成物の製造装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893886A (ja) * 1981-11-30 1983-06-03 Tokuyama Soda Co Ltd 電気メツキ方法
US8236159B2 (en) * 1999-04-13 2012-08-07 Applied Materials Inc. Electrolytic process using cation permeable barrier
US7195702B2 (en) * 2003-06-06 2007-03-27 Taskem, Inc. Tin alloy electroplating system
JP5184308B2 (ja) * 2007-12-04 2013-04-17 株式会社荏原製作所 めっき装置及びめっき方法
CN101476150B (zh) * 2008-12-29 2013-09-04 广州电器科学研究院 一种电镀Sn-Cu合金的装置及其方法
US9404194B2 (en) * 2010-12-01 2016-08-02 Novellus Systems, Inc. Electroplating apparatus and process for wafer level packaging
JP5876767B2 (ja) * 2012-05-15 2016-03-02 株式会社荏原製作所 めっき装置及びめっき液管理方法

Also Published As

Publication number Publication date
SG10201500966QA (en) 2015-09-29
CN104878420A (zh) 2015-09-02
TW201533279A (zh) 2015-09-01
US20150247251A1 (en) 2015-09-03

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