KR20150098471A - Carrier for Inline sputtering apparatus - Google Patents

Carrier for Inline sputtering apparatus Download PDF

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Publication number
KR20150098471A
KR20150098471A KR1020140019791A KR20140019791A KR20150098471A KR 20150098471 A KR20150098471 A KR 20150098471A KR 1020140019791 A KR1020140019791 A KR 1020140019791A KR 20140019791 A KR20140019791 A KR 20140019791A KR 20150098471 A KR20150098471 A KR 20150098471A
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KR
South Korea
Prior art keywords
carrier
sputtering
chamber
heater
temperature
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Application number
KR1020140019791A
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Korean (ko)
Inventor
최성대
임남수
Original Assignee
금오공과대학교 산학협력단
(주)리지스
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Priority to KR1020140019791A priority Critical patent/KR20150098471A/en
Publication of KR20150098471A publication Critical patent/KR20150098471A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A carrier of an in-line sputtering apparatus is disclosed. The present invention relates to a carrier of an in-line sputtering apparatus in which a carrier is improved so that a glass is positioned at an optimum position when sputtering while passing through a plurality of chambers. The carrier of the inline sputtering apparatus according to the present invention comprises a heating chamber provided with heaters on the front and rear surfaces thereof for transferring heat to a carrier for transferring the glass, and a heating chamber disposed on the inner front and rear surfaces so as to be sputtered to the carrier passing through the heating chamber A first sputtering chamber in which a heater is installed and a cathode is provided in an outer side in front of the first sputtering chamber, a heater is provided on the inner front and rear surfaces so that the second sputtering is performed on the carrier passing through the first sputtering chamber, The inline sputter apparatus comprising a second sputtering chamber, wherein the carrier comprises an outer frame forming a frame of the outer frame and a horizontally arranged rear frame of the outer frame so that the glass of the carrier is close to the rear of the chambers, And includes a plurality of carrier bars.

Description

Carrier for Inline Sputtering Apparatus < RTI ID = 0.0 >

The present invention relates to a carrier of an in-line sputtering apparatus, and more particularly, to a carrier of an in-line sputtering apparatus in which a carrier is improved so that a glass is positioned at an optimal position during sputtering while passing through a plurality of chambers.

Generally, a transparent conductive thin film is generally referred to as an oxide based degenerate semiconductor electrode having high light transmittance (at least 85%) and low resistivity (at most 1 × 10 -3 Ω · cm) in the visible light region. The transparent conductive thin film is a core material of the IT industry used as electrodes for flat panel displays, solar cells, touch panels, and transparent transistors, which simultaneously require light transmission and current injection / extraction. SnO2-doped In2O3) is mainly used. ITO is an n-type semiconductor with a wide bandgap of about 3.5 ~ 4.3eV. It has high light transmittance in visible light region, near infrared reflectance, excellent electric conductivity, chemical stability at normal temperature / pressure and excellent etching property.

 The transparent conductive thin film is used as an electrode material for LCD, OLED, PDP, and transparent display in the display, and as a resistive film and capacitive touch sensor in the touch panel. Thin-film solar cells are used as electrodes for a-Si, CIGS, CdTe, and dye-sensitized (DSSC) types.

 As such, the transparent conductive thin film has many applications in various technical fields and is highly demanded. In particular, the touch industry has been growing rapidly since major handset makers adopted the touch phone as a strategic model after the successful launch of smartphones with touch screens in 2007. Although the touch panel industry is currently focused on small-sized mobile devices, it is expected to expand to include mid-sized display devices such as notebooks and TVs, automobiles, and home appliances.

As the touch screen industry is accelerating, mass production and high quality transparent conductive thin films are required. Although a lot of studies have been made on transparent conductive thin films, ITO is the material with the most excellent characteristics and mass production is possible using inline sputtering.

1 and 2, the carrier 10 used in the conventional in-line sputtering apparatus includes an outer frame 11 constituting an outer periphery of a slope and a frame 11 holding the outer frame 11 in a cross- A horizontal jig 12 horizontally provided on the upper and lower sides of the outer frame 11 and a horizontal jig 12 disposed horizontally at a predetermined interval between the outer frame 11 and the fixing jig 13 to support the glass As shown in Fig.

However, the conventional inline sputtering apparatus has a problem that the yield is only 30% at an actual effective area. This is because the structure of the carrier lowers the receiving temperature of the product and the temperature distribution is different.

Korean Patent Registration No. 10-0382809

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above problems and it is an object of the present invention to provide a carrier of an inline sputtering apparatus capable of increasing the yield at an effective area by arranging the glass to be positioned close to the chamber based on simulation results of temperature distribution of sputtered chambers ≪ / RTI >

In order to accomplish the above object, the present invention provides a heating apparatus comprising: a heating chamber having heaters installed on front and rear surfaces thereof for transmitting heat to a carrier for transferring glass; A first sputtering chamber in which a heater is provided on the inner front and rear surfaces so that the carrier passing through the heating chamber is primarily sputtered and a cathode is provided on the outer side; And a second sputtering chamber in which a heater is provided on the inner front and rear surfaces so that the sputtering is performed on the carrier passing through the first sputtering chamber and a cathode is provided on the outer side of the carrier, Outer frame; And a plurality of carrier bars arranged horizontally on the rear surface of the outer frame so as to support the glass such that the glass of the carrier approaches the rear of the chambers.

Preferably, the carrier is tilted 7-11 relative to the vertical plane.

Preferably, the temperature of the front heater of the second sputtering chamber is 430-450 占 폚, and the temperature of the rear heater is 410-430 占 폚.

Preferably, the temperature of the front heater of the first sputtering chamber is 380 - 400 캜, and the temperature of the rear heater is 400 - 420 캜.

The present invention as described above has the following effects.

(1) The carrier of the inline sputtering apparatus according to the present invention secures an improved mass production technology between the cell glass and the TCO layer.

(2) The carrier of the inline sputtering apparatus according to the present invention can improve the yield by complementing the problem of temperature unevenness of existing carriers.

1 is a front view of a carrier of an inline sputtering apparatus according to the prior art.
Figure 2 is an assembled overall plan view of the carrier shown in Figure 1;
3 is an exploded overall plan view of the carrier shown in Fig.
4 is a schematic configuration diagram of an in-line sputtering apparatus according to the present invention.
5 is a front view of the carrier of the inline sputtering apparatus according to the present invention.
Figure 6 is an assembled overall plan view of the carrier shown in Figure 5;
Figure 7 is an exploded overall plan view of the carrier shown in Figure 5;
8 is a graph showing a temperature distribution of carriers according to a temperature condition of a heater installed in chambers of an inline sputtering apparatus according to the present invention.

The above objects, features and advantages of the present invention will become more apparent from the following detailed description. Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The present invention relates to a transparent conductive thin film (ITO) deposition technique for developing a high quality (low resistance, high transmittance) crystalline transparent conductive thin film (ITO) deposition technique applied to a G2 Type TSP (Touch Screen Panel) And 3D simulation was used.

The inline sputtering apparatus 100 according to the present invention uses a vertical inline sputter having a length of 40M, a width of 7M and a height of 3.2M and inclined at 9 degrees. The chambers, cathodes, and carriers all have slopes. Since the carrier 20 is inclined, the substrate transfer is relatively stable as compared with the vertical type. DC power supply, and uses a flat-type target and has four sets of cathodes and ITO targets for fast deposition rates. A heater is mounted inside the chamber (front and back of the substrate) to raise the temperature of the glass to 300 ° C or less and maintain the temperature even when the substrate is transferred. The plasma is generated on the ITO target, and the substrate is moved and deposited. When the ITO thin film is crystallized at 300 ° C or less, the transparent conductive film characteristics are exhibited.

4, after confirming the temperature and vacuum distribution of the inline sputtering apparatus 100 according to the present invention, the thickness of the thin film is controlled by controlling the DC power, and the optimum temperature at which the ITO can be crystallized . By controlling the Ar / O2 ratio, we can find the optimal process pressure conditions for fabricating transparent conductive films with low resistance and high transmittance. The size of the carrier of the inclined inline sputter is 1900 x 1780 mm and the effective area is 1500 x 1650 mm.

4, the inline sputtering apparatus 100 includes an entry chamber 101 in which a carrier 20 is first inserted and which is a chamber, and first and second heaters 102a and 103a, 2 buffer chamber 102 and 103, a transfer chamber 104, a Nb 2 O 5 chamber 105 having a rear heater 105a and a front cathode 105b, a rear heater 106a and a front cathode 106b A heating chamber 107 which is provided with heaters 107a and 107b on the front and rear surfaces and which transfers heat to the carrier 20 for transferring the glass; A first sputtering chamber 108 in which heaters 108a and 108b are provided on the inner front and rear surfaces so as to be sputtered in the first sputtering chamber 108 and a cathode 108c is provided on the outer side in front of the first sputtering chamber 108, Heaters 109a and 109b are provided on the inner front and rear surfaces so that the carrier 20 is sputtered secondarily, and cathodes 109 a transfer chamber 110, a buffer chamber 111, and an exit chamber 112. The first and second sputtering chambers 109,

One of the main factors determining the characteristics of the ITO transparent conductive film is the temperature characteristic, which affects the film characteristics. In the center part of the carrier, there is almost no temperature deviation, and the effect on the product is not so large. However, due to the structure of the carrier, there is a temperature difference between the upper, lower and left edges. In order to improve this, we designed and manufactured the carrier to uniformly distribute the temperature distribution of the product through the analysis of the experiment and simulation, and to apply it to the inclined inline sputtering, thereby improving the yield per carrier by more than 50% within the effective area.

Simulation was first performed by simulating the temperature distribution of each chamber. When there is no influence of the peripheral chamber, the temperature distribution of the chamber through the heater installed inside the chamber was examined.

In the heating chamber 107, a horizontal heater and a vertical heater are provided in substantially the same area in the chamber before and after the carrier 20, so that the temperature distribution is uniform.

In the first and second sputtering chambers 108, a vertical heater 108a is installed at the rear, but a target is located at the front, and a horizontal heater 108b is provided at only one side. Therefore, the difference in temperature distribution appears at the portion where the heater is installed and the portion where the target is installed. Therefore, in order to increase the temperature and raise the temperature, it is necessary to move the carrier 20 toward the rear side.

Because the sputtering ITO deposition facility is in-line, the chamber temperature is not independent and is influenced by the ambient chamber temperature. The targets of the first and second sputtering chambers 108 and 109 are always on but the target of the second sputtering chamber 109 is off when the target is deposited in the first sputtering chamber 108, The target of the first sputtering chamber 108 is turned off while alternately using the targets of the first sputtering chamber 108 to increase the replacement period of the target so that the process is efficiently performed. However, the deposition rate in the second sputtering chamber 109 is lower than that in the first sputtering chamber 108. When the first sputtering chamber 108 and the second sputtering chamber 108 are deposited, A heater is present in the chamber 109 but no heater is present in the transfer chamber 110 when depositing into the second sputtering chamber 109. [

Therefore, in order to examine the temperature distribution of the chamber due to the presence / absence of the peripheral chamber heater, the temperature condition of the first sputtering chamber 108 according to the temperature change of the second sputtering chamber 109 was examined through the following simulation.

One Heating chamber The first sputtering chamber The second sputtering chamber REAR 340 ° C 390 DEG C 390 DEG C FRONT 350 ℃ 410 ° C 410 ° C

Table 1 shows the conventional process condition heater temperature distribution.

2 Heating chamber The first sputtering chamber The second sputtering chamber REAR 340 ° C 390 DEG C 0 ℃ FRONT 350 ℃ 410 ° C 0 ℃

Table 2 above shows that the temperature of the second sputtering chamber 109 is lowered.

3 Heating chamber The first sputtering chamber The second sputtering chamber REAR 340 ° C 390 DEG C 390 DEG C FRONT 350 ℃ 410 ° C 450 ℃

Table 3 above shows that the heater temperature in the front of the second sputtering chamber 109 is increased under the heater condition.

4 Heating chamber The first sputtering chamber The second sputtering chamber REAR 340 ° C 390 DEG C 420 DEG C FRONT 350 ℃ 410 ° C 440 ° C

The heater condition in Table 4 is that the heater temperatures before and after the second sputtering chamber 109 are increased.

The temperature distribution graph shown in FIG. 8 is obtained by measuring the temperature distribution of the carrier 20 in the first sputtering chamber 108 according to the conditions according to Tables 1 to 4 above.

As can be seen from FIG. 8, when the temperature of the second sputtering chamber 109 is lower than the existing process conditions, the temperature of the target portion of the first sputtering chamber 108 tends to be sharply lowered. And raising the temperature of both heaters raises the internal temperature of the chamber, rather than only raising the temperature of one heater. Thus, it can be seen that the temperature inside the chamber is affected by the ambient chamber temperature.

The carrier is designed by referring to the simulation result according to the temperature distribution.

The auxiliary carrier (cross bar) is removed from the existing carrier to minimize out gashing during ITO deposition. The auxiliary carrier was removed, allowing more glass loading and increased mass productivity. Also, the carrier bar was positioned as close as possible to the rear so that the temperature distribution was even.

In this way, the primary improved carrier is positioned 50mm rearward of the carrier bar than the existing carrier, and the manufacturing cost is increased due to the increase of the production part. Since there is no carrier bar at the top and bottom of the existing carrier, The advantages of increasing the product can not be exerted. In addition, since various types of glass substrates are deposited by ITO, even when the carrier bar moves up and down, the carrier bar moves to the rear and moves more restrictively than the conventional carrier. And the carrier was deflected due to the removal of the auxiliary carrier.

 The carrier and the chamber may collide with each other when passing between the chambers due to the occurrence of vibrations when the carriers are moved, so that the glass substrate loaded on the carrier may be damaged.

Since the distance between the target and the glass substrate attached to the carrier is a distance equal to or greater than the free stroke distance, the distance (Lt) between the glass substrate and the target should be closer to the target during sputtering.

In order to solve these problems, the carrier has been improved in the second place.

As in the case of the first modified carrier, the carrier is moved close to the rear, and the distance is adjusted so as to be equal to or less than the free stroke distance.

Although the first modified carrier is designed by changing the loading position to the rear for uniform distribution of heat in the existing carrier, the distance Lt between the target and the glass substrate must be less than the free stroke distance in order to deposit the ITO, The second modified carrier was designed by rearranging the distance Lt.

5 to 7, a carrier 20 according to the present invention is shown. The carrier 20 is horizontally arranged on the rear side of the outer frame 21 so that the glass of the carrier 20 is close to the rear of the chambers 107-109 And a plurality of carrier bars 22 for supporting the glass.

Since the carrier bars 22 are arranged horizontally at regular intervals so as to be close to the rear side of the outer frame 21, the glass sputtered by the carrier bar 22 is also formed in the chamber 107- 109) is positioned close to the rear.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the inventions. It will be apparent to those of ordinary skill in the art.

20: Carrier 21: Outer frame
22: Carrier bar 100: Inline sputtering device
107: Heating chamber 108: First sputtering chamber
109: second sputtering chamber

Claims (4)

A heating chamber provided with a heater on the front and rear sides thereof for transmitting heat to a carrier for transferring the glass;
A first sputtering chamber in which a heater is provided on the inner front and rear surfaces so that the carrier passing through the heating chamber is primarily sputtered, and a cathode is provided on the outer side; And
A second sputtering chamber in which a heater is provided on the inner front and rear surfaces so that the carrier passing through the first sputtering chamber is secondarily sputtered and a cathode is provided on the outer side thereof;
Wherein the in-line sputtering apparatus comprises:
Wherein the carrier comprises: an outer frame forming an outer frame; And
A plurality of carrier bars arranged horizontally on a rear surface of the outer frame to support the glass such that the glass of the carrier approaches the rear of the chambers;
Wherein the carrier is a sputtering target. The method according to claim 1,
Characterized in that the carrier is tilted 7-11 relative to the vertical plane. The method according to claim 1,
Wherein the temperature of the front heater of the second sputtering chamber is 430-450 占 폚 and the temperature of the rear heater is 410-430 占 폚. The method according to claim 1,
Wherein the temperature of the front heater of the first sputtering chamber is 380-400 占 폚 and the temperature of the rear heater is 400-420 占 폚.

KR1020140019791A 2014-02-20 2014-02-20 Carrier for Inline sputtering apparatus KR20150098471A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020140019791A KR20150098471A (en) 2014-02-20 2014-02-20 Carrier for Inline sputtering apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020140019791A KR20150098471A (en) 2014-02-20 2014-02-20 Carrier for Inline sputtering apparatus

Publications (1)

Publication Number Publication Date
KR20150098471A true KR20150098471A (en) 2015-08-28

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Country Status (1)

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KR (1) KR20150098471A (en)

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