KR20150087748A - Method for manufacturing probes of probe card, polishing apparatus for the same, and probe card having probe manufactured by the same - Google Patents

Method for manufacturing probes of probe card, polishing apparatus for the same, and probe card having probe manufactured by the same Download PDF

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Publication number
KR20150087748A
KR20150087748A KR1020140008019A KR20140008019A KR20150087748A KR 20150087748 A KR20150087748 A KR 20150087748A KR 1020140008019 A KR1020140008019 A KR 1020140008019A KR 20140008019 A KR20140008019 A KR 20140008019A KR 20150087748 A KR20150087748 A KR 20150087748A
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KR
South Korea
Prior art keywords
probe
polishing
probe card
polished
column
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Application number
KR1020140008019A
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Korean (ko)
Inventor
심현수
류대선
명은주
이충희
이종길
원호연
Original Assignee
솔브레인멤시스(주)
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Priority to KR1020140008019A priority Critical patent/KR20150087748A/en
Publication of KR20150087748A publication Critical patent/KR20150087748A/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

The present invention relates to a probe manufacturing method of a probe card, and the probe card having a probe manufactured thereby and, more specifically, to a probe manufacturing method of a probe card capable of: saving manufacturing costs by simplifying the manufacturing process of a probe; reducing the probability in which a wafer or probe end is damaged when the end of the probe is polished as a dome shape and the wafer is in contact with the probe; increasing a recognition rate by widening the contact area between the end of the probe and the wafer; and extending the service life of the probe by easily removing extraneous matter attached to the end when the probe is used and a probe card having the probe manufactured thereby. In the probe manufacturing method of a probe card according to the present invention, the present invention is to provide the probe manufacturing method of a probe card comprising: a mold forming step of forming a mold to manufacture the probe by using photoresist; a primary polishing step of firstly polishing the end of the probe which is manufactured by the mold; and a secondary polishing step of polishing the end of the probe which is polished in the primary polishing step as a dome shape.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a probe card manufacturing method, a polishing apparatus used for manufacturing the probe card, and a probe card having a probe manufactured thereby,

The present invention relates to a probe card manufacturing method and a probe card having the probe card manufactured thereby, and more particularly, to a probe card manufacturing method that simplifies the manufacturing process of the probe and reduces the manufacturing cost, It is possible to reduce the possibility of damaging the end of the wafer or the probe when the wafer and the probe are in contact with each other and to increase the recognition rate by widening the contact area between the end of the probe and the wafer and to easily remove the attachment And prolonging the life of the probe, and a probe card having the probe manufactured thereby.

Semiconductor chips manufactured in the state of a wafer are subjected to electrical die sorting (EDS) inspection to check their electrical characteristics before they are assembled into a liquid crystal display (LCD) or a semiconductor package. According to the result of the EDS inspection, the good semiconductor chip is assembled into a liquid crystal display element or a semiconductor package, and the defective semiconductor chip is discarded without being assembled.

Such an EDS test is performed using a probe equipped with a probe in which a computer can be electrically contacted with a tester having various measuring instruments and a semiconductor chip to be inspected.

The probe card is used as an intermediate medium for connecting the pads of the unit semiconductor chips of the wafer and the tester to inspect the characteristics of the fine patterns and electrodes of the semiconductor chips on the wafer. By moving in the X, Y, and Z axes, the probe is tested by touching each probe installed on the probe card at a specified point in the wafer.

Such a probe is manufactured by preparing a mold for a probe through etching on a wafer, preparing a mold for a probe using a polymer material or the like, filling the mold by a plating process, forming a fin, and then removing the mold material. Method.

Such a conventional probe manufacturing method has a problem in that the manufacturing cost is increased due to a long manufacturing process time, the end of the probe is formed sharply and the end of the wafer or the probe is damaged or the contact resistance is increased when the wafer is in contact with the probe, There was a possibility that it would be lowered.

Thus, for example, in "Probe and probe card manufacturing method" disclosed in Patent Document 1, a technique for reducing the manufacturing cost by reducing the manufacturing process time is disclosed.

However, even in the case of Patent Document 1, the manufacturing cost is not reduced as much as expected, and the life of the probe card can be shortened.

[Prior Art Literature]

[Patent Literature]

(Patent Document 1) Korean Patent Publication No. 10-2010-0060976

It is an object of the present invention to provide a method of manufacturing a probe card of a probe card capable of reducing manufacturing cost by simplifying a manufacturing process of a probe and a probe having the probe manufactured thereby. Card.

Another object of the present invention is to provide a method of manufacturing a probe card of a probe card capable of reducing the possibility of damaging the end of a wafer or a probe when the wafer and the probe are brought into contact with each other by polishing the end of the probe in a hemispherical shape, .

Another object of the present invention is to provide a method of manufacturing a probe card of a probe card capable of increasing the recognition rate by widening the contact area between the end of the probe and the wafer and a probe card having the probe manufactured thereby.

Another object of the present invention is to provide a method of manufacturing a probe card having a probe card that can easily remove an attachment adhered to a distal end of the probe, thereby prolonging the life of the probe, and a probe card having the probe.

According to another aspect of the present invention, there is provided a method of manufacturing a probe card, the method comprising: a mold embodying a mold for manufacturing a probe using a photoresist; A primary polishing step of primary polishing the end of the probe manufactured through the mold; And a secondary polishing step of polishing the end of the polished probe in a hemispherical shape in the primary polishing step; The probe card includes a probe card and a probe card.

In the secondary polishing step, a probe card provided with a plurality of probes polished in the primary polishing step is brought close to a polishing apparatus having a plurality of polishing means, so that the end of the polished probe in the primary polishing step is repeatedly So as to be polished.

The polishing means comprises: a column having elasticity; And a polishing part formed at an end of the column; . ≪ / RTI >

One or both of the column and the polishing portion may be configured to be uniformly arranged at regular intervals.

The abrasive part may be selected from the group consisting of silica, alumina, artificial corundum, emery, alundum, dolomite, diamond, zirconia, garnet, ceria, silicon carbide, boron carbide, Iron oxide, chromium oxide, titanium dioxide, tungsten carbide, titanium carbide, or a combination of two or more thereof.

The polishing portion may be configured to have a diameter larger than the diameter of the column.

When the distal end of the probe is inserted between the polishing means, the polishing apparatus may be any one of a rotational motion operated around a virtual axis connecting the center of the probe card and the center of the polishing apparatus, or a rectilinear motion Or < / RTI >

According to another aspect of the present invention, there is provided a probe card having a probe manufactured by the method for manufacturing a probe card according to any one of claims 1 to 7.

According to another aspect of the present invention, there is provided a polishing apparatus used for manufacturing a probe of a probe card, comprising: a main body; And a plurality of polishing means formed on the body apart from each other; Wherein a probe card having a plurality of probes is brought into close contact with the main body so that the end of the probe is repeatedly brought into contact with at least two of the polishing means to polish the ends of the probe in a hemispherical shape. The present invention also provides a polishing apparatus for use in the manufacture of a probe of the present invention.

The probe may be configured such that the distal end is a primary-polished probe.

The polishing means comprises: a column having elasticity; And a polishing part formed at an end of the column; And the polishing part has a diameter larger than the diameter of the column and is made of silica, alumina, artificial corundum, emery, allen, Any one or a combination of two or more of alundum, dolomite, diamond, zirconia, garnet, ceria, silicon carbide, boron carbide, iron oxide, chromium oxide, titanium dioxide, tungsten carbide, titanium carbide The main body is configured to perform a rotational motion that is operated around a virtual axis connecting the center of the probe card and the center of the main body or a linear motion that slides forward and backward and leftward and rightward when the distal end of the probe is in contact with the polishing means May be configured to perform either one or both.

According to the probe card manufacturing method of the present invention and the probe card having the probe manufactured by the method according to the present invention, the manufacturing process of the probe can be simplified and manufacturing cost can be reduced.

In addition, the present invention has an effect of lowering the possibility of damaging the ends of the wafer or the probe when the wafer and the probe are brought into contact with each other by polishing the end of the probe in a semispherical shape.

Further, the present invention has the effect of increasing the recognition rate by widening the contact area between the distal end of the probe and the wafer.

In addition, the present invention can easily remove an attachment adhered to a distal end when using a probe, thereby prolonging the life of the probe.

FIG. 1 is a flowchart illustrating a procedure of manufacturing a probe of a probe card according to an embodiment of the present invention.
2 is a schematic view showing a polishing apparatus used in the second polishing step of the present invention.
FIGS. 3 (a) and 3 (b) to 5 (a) to 5 (c) are process diagrams showing a process of manufacturing a probe of a probe card according to an embodiment of the present invention.
6 is a view illustrating a portion of a probe card having a probe manufactured by a method of manufacturing a probe card according to an embodiment of the present invention.

Hereinafter, the present invention will be described in detail with reference to the drawings. However, these drawings are for illustrative purposes only and the present invention is not limited thereto.

FIG. 1 is a flowchart showing a procedure of manufacturing a probe of a probe card according to an embodiment of the present invention, and FIG. 2 is a schematic view of a polishing apparatus used in a second polishing step of the present invention.

Referring to FIG. 1, a probe manufacturing method according to a probe card manufacturing method according to an embodiment of the present invention includes a mold performing step S100, a primary polishing step S110, and a secondary polishing step (S120).

The mold implementation step SlOO is a step of implementing a mold for manufacturing the probe 210 using a photoresist.

The primary polishing step (S110) is a step of primary polishing the end of the probe 210 manufactured through the mold. The primary polishing step S110 is a step of sanding with a sandpaper or a sandblaster so as to hold the end shape of the probe 210 or make the Z axis coordinate of the end of the probe 210 uniform.

The secondary polishing step S120 is a step of polishing the end of the polished probe 210 in a hemispherical shape in the primary polishing step S110 and uses the polishing apparatus 100 in which a plurality of polishing means 20 is formed do.

That is, in the first polishing step S110, the probe card 200 provided with a plurality of polished probes 210 is brought close to the polishing apparatus 100, and the distal end of the polished probe 210 in the primary polishing step S110 Is repeatedly brought into contact with at least two polishing means (20), thereby polishing the distal end of the probe (210) in a hemispherical shape.

The polishing apparatus 100 used in the secondary polishing step S120 of the present invention comprises a main body 10 and a plurality of polishing means 20 as shown in Fig.

The main body 10 is a portion in which the polishing apparatus 100 is moved up and down, rotated, moved forward or backward, or slidably moved left and right. The main body 10 is preferably configured to be movable in various directions such as the X-axis, the Y-axis, and the Z-axis. The main body 10 is lifted and lowered and the polishing means 20 is attached to the probe card 200 on which the plurality of probes 210 polished in the primary polishing step S110 (hereinafter referred to as "primary polishing polished" So that the distal end of the primary polished probe 210 is repeatedly brought into contact with the polishing means 20. The center of the probe card 200 and the center of the polishing apparatus 100, for example, the center of the main body 10, through the rotating means 30 connected to the main body 10 The end of the first polished probe 210 may be repeatedly brought into contact with the plurality of polishing means 20 by performing one or both of the rotational motion of the first polished surface or the linear motion of sliding the front and rear or the left and right. Meanwhile, although not shown, the main body 10 may be provided with a suction device for sucking contaminants generated by polishing the ends of the primary polished probe 210.

The polishing means 20 is disposed at a plurality of positions apart from each other in the main body 10 and contacts the primary polished probe 210 according to the operation of the main body 10, And includes a column 22 and a polishing section 24. As shown in FIG.

The column 22 is made of a material having elasticity so that the primary polished probe 210 is naturally opened when the probe 210 is inserted between the polishing means 20, Particularly, it is preferable that the column 22 is formed of a soft material such as synthetic resin or rubber so that the primary polished probe 210 is not polished or damaged even if it collides with the primary polished probe 210.

Abrasive section 24 is polished than the diameter (D 1) of the portion so that the semi-spherical shape by grinding the ends of the columns 22 is substantially 1, the primary polishing probe 210 is formed at the distal end of, columns 22 so that the ends of the section 24 the diameter (D 2) is larger the more smoothly formed primary polishing the probe 210 in to the polishing. Here, the shape of the polishing part 24 used in the present invention has a rectangular shape, but it can be formed into various shapes such as a circular shape depending on the material and size of the primary polished probe 210 to be polished. The abrasive portion 24 may be formed of various materials such as silica, alumina, artificial corundum, emery, alundum, dolomite, diamond, zirconia, garnet, and may be made of any one or a combination of two or more of ceria, silicon carbide, boron carbide, iron oxide, chromium oxide, titanium dioxide, tungsten carbide, and titanium carbide. The polishing section 24 may be formed to be coated along the periphery of the column 22 or may be formed separately from the column 22 and may be formed to be replaceable It is possible. In this case, the polished portion 24 can be easily replaced and polished depending on the material of the primary polished probe 210. That is, when the primary polished probe 210 is made of tungsten, the Mohs hardness is 7.5. Therefore, instead of the polishing portion 24 made of a material having lower Mohs hardness, the polishing portion 24 having high Mohs hardness, It is possible to use the abrasive part 24 made of alumina having a particle diameter of 0.5 to 10 탆.

In the meantime, both the poles 22 and the polished portion 24 or the poles 22 and the polishing portion 24, which are formed in a large number, are arranged at uniform intervals, So that the ends of the probes 210 are uniformly polished. At this time, it is preferable to adjust the gap between the column 22 and the polishing part 24 according to the size or material of the primary polished probe 210 and the like.

Hereinafter, a method of manufacturing a probe card of a probe card according to an embodiment of the present invention and a probe card having the probe manufactured thereby will be described in detail with reference to the accompanying drawings.

FIG. 3 is a process diagram showing a process of manufacturing a probe of a probe card according to an embodiment of the present invention, and FIG. 6 is a cross- FIG. 8 is a view showing a part of a probe card having a probe manufactured by a method of manufacturing a probe card according to an embodiment;

3 (a) shows a mold implementation step (S100), wherein a mold is implemented using a photoresist on a wafer, and FIG. 3 (b) Polishing step S110 is performed to polish the distal end of the probe 210 in the primary polishing step.

The probe card 200 having a plurality of primary polished probes 210 mounted on the probe card fixing table F is mounted on the top of the polishing apparatus 100 having a plurality of polishing means 20 as shown in FIG. And the secondary polishing step (S120) is performed. At this time, the positions of the probe card 200 and the polishing means 20 may be aligned through a separate alignment mechanism (not shown).

Next, the main body 10 of the polishing apparatus 100 is raised to the probe card 200 side as shown in Fig. 5 (a).

5 (b), when the distal end of the primary polished probe 210 is inserted and contacted between two or more polishing means 20, the upward movement of the main body 10 is stopped, The distal end of the primary polished probe 210 is polished in a semispherical shape.

At this time, in the step of polishing the end of the primary polished probe 210 in a hemispherical shape, the main body 10 is continuously raised and lowered, so that the end of the primary polished probe 210 repeatedly contacts the polishing means 20 The probe card 200 may be polished so that the probe card 200 is separated from the main body 10 by the rotating means 30 connected to the main body 10 in a state in which the main body 10 of the polishing apparatus 100 is lifted, The main body 10 may be polished by rotating the main body 10 around a virtual axis connecting the center of the main body 10 and the center of the main body 10 or may be polished by moving the main body 10 linearly in a sliding manner. Further, the above-described polishing method (repeated lifting and lowering of the main body, rotational motion of the main body, and linear motion of the main body) may be partially combined or all of them may be combined. These polishing methods are all methods in which the end of the primary polished probe 210 and the polishing means 20 repeatedly come into contact, that is, a method of polishing by friction.

After the second polishing step (S120) is performed in this way, a probe card having a probe 210 whose tip is hemispherically polished as shown in Fig. 6 is manufactured.

On the other hand, as shown in Fig. 5 (c), the probe 210 to be processed by the polishing means 20 may be in a state where the tip is not initially machined. For example, it means that all or a part of the pre-processing such as the primary polishing may be omitted and the polishing process may proceed in a state where only the approximate shape of the probe 210 is implemented. Therefore, the time and cost required for the pre-processing such as the primary polishing can be reduced.

In addition, the polishing means 20 according to an embodiment of the present invention can be used for reworking the probe 210 in use. 5 (a) and 5 (b), due to repetitive use of the probe 210, the probe 210 having a blunt end portion is reworked as shown in FIG. 5 (c) The polishing means 20 can be used. Since the probe 210 can be reworked and used, the life of the probe 210 can be prolonged. Therefore, the cost of replacing the probe 210 can be greatly reduced.

As described above, according to the probe card manufacturing method of the embodiment of the present invention, the manufacturing process of the probe 210 can be simplified and the manufacturing cost can be reduced.

In order to inspect the characteristics of the fine pattern of the semiconductor chip and the electrode on the wafer by forming the hemispherical end of the probe 210, when the wafer and the probe 210 are brought into contact with each other, the end of the wafer or the probe 210 is damaged It is possible to increase the recognition rate by widening the contact area between the distal end of the probe 210 and the wafer.

Here, a control panel (not shown) capable of controlling the operation of the main body 10 is provided, and the end of the primary polished probe 210 and the distal end of the primary polished probe 210 It is also possible to control the number and time of contact of the polishing means 20 to control the degree of polishing.

On the other hand, the probe card 200 having the hemispherically polished probe 210 adheres to the end of the probe 210 which is in contact with the pad of the semiconductor chip during long-term use, .

Also in this case, the end of the probe 210 is polished by using the polishing apparatus 100 used in the present invention, thereby removing the deposit, thereby prolonging the life of the probe 210.

Thus, those skilled in the art will appreciate that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof.

It is therefore to be understood that the embodiments described above are to be considered in all respects as illustrative and not restrictive and the scope of the invention is indicated by the appended claims rather than the foregoing description, It is intended that all changes and modifications derived from the equivalent concept be included within the scope of the present invention.

S100: mold implementation step S110: primary polishing step
S120: Secondary polishing step 10:
20: Polishing means 22: Column
24: polishing section 30: rotating means
100: polishing apparatus 200: probe card
210: probe F: probe card holder

Claims (11)

A method of manufacturing a probe card probe card,
A mold embodying a mold for the manufacture of a probe using a photoresist;
A primary polishing step of primary polishing the end of the probe manufactured through the mold; And
A secondary polishing step of polishing the end of the polished probe in a hemispherical shape in the primary polishing step;
Wherein the probe card is a probe card. The method according to claim 1,
In the secondary polishing step,
A probe card provided with a plurality of polished probes in the primary polishing step and a polishing apparatus in which a plurality of polishing means are formed are brought close to each other so that the ends of the probes polished in the primary polishing step are repeatedly contacted between two or more polishing means And polishing the probe card. 3. The method of claim 2,
The polishing means comprises:
A column having elasticity; And
A polishing part formed at the end of the column;
Wherein the probe card includes a plurality of probes. The method of claim 3,
Wherein one or both of the column and the polishing unit are uniformly arranged at regular intervals. The method of claim 3,
The polishing unit includes:
Silica, alumina, artificial corundum, emery, alundum, dolomite, diamond, zirconia, garnet, ceria, silicon carbide, boron carbide, iron oxide, Chromium, titanium dioxide, tungsten carbide, titanium carbide, or a combination of two or more thereof. The method of claim 3,
The polishing unit includes:
Wherein the diameter of the column is larger than the diameter of the column. The method of claim 3,
The polishing apparatus includes:
When the end of the polished probe in the primary polishing step contacts between the polishing means,
Wherein the probe card is configured to perform one or both of rotational motion that is centered on a virtual axis connecting the center of the probe card and the center of the polishing apparatus, or linear motion that slides forward and backward and leftward and rightward. Way. A probe card having a probe manufactured by the method for manufacturing a probe card according to any one of claims 1 to 7. 1. A polishing apparatus used for manufacturing a probe card of a probe card,
main body; And
A plurality of polishing means formed on the body apart from each other; ≪ / RTI >
Wherein a probe card having a plurality of probes is brought into close proximity with the main body so that the ends of the probes are repeatedly brought into contact with at least two of the polishing means to polish the ends of the probes in a hemispherical shape An abrasive device used. 10. The method of claim 9,
Wherein the probe is a probe whose distal end is primary-polished. 11. The method of claim 10,
The polishing means comprises:
A column having elasticity; And
A polishing part formed at the end of the column; Lt; / RTI >
One or both of the column and the polishing unit are uniformly arranged at regular intervals,
The polishing unit includes:
Wherein the column has a diameter larger than the diameter of the column and is selected from the group consisting of silica, alumina, artificial corundum, emery, alundum, dolomite, diamond, zirconia, garnet, ceria, And is composed of any one or a combination of two or more of silicon carbide, boron carbide, iron oxide, chromium oxide, titanium dioxide, tungsten carbide and titanium carbide,
The main body includes:
When the end of the probe is contacted between the polishing means,
Wherein the probe card is configured to perform one or both of rotational motion that is centered on a virtual axis connecting the center of the probe card and the center of the body, or linear motion that slides forward and backward and leftward and rightward. An abrasive device used.
KR1020140008019A 2014-01-22 2014-01-22 Method for manufacturing probes of probe card, polishing apparatus for the same, and probe card having probe manufactured by the same KR20150087748A (en)

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Application Number Priority Date Filing Date Title
KR1020140008019A KR20150087748A (en) 2014-01-22 2014-01-22 Method for manufacturing probes of probe card, polishing apparatus for the same, and probe card having probe manufactured by the same

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101699688B1 (en) 2016-09-21 2017-01-25 한지수 porbe pin grinding tool and probe pin manufacture method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101699688B1 (en) 2016-09-21 2017-01-25 한지수 porbe pin grinding tool and probe pin manufacture method

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