KR20150087483A - Light emitting diode device, light emitting diode module and method of fabricating the same - Google Patents

Abstract

The present invention relates to a light emitting diode device, a light emitting diode module and a method of fabricating the same. More particularly, the present invention relates to a light emitting diode device for improving total light extraction efficiency by a light extraction structure formed by patterning the lower side of a substrate, and a method of fabricating the same. A light emitting diode device according to the embodiment of the present invention includes a substrate which an upper side and a lower side facing the upper side; a semiconductor stack structure which includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer and is located on the upper side of the substrate; and a reflection layer located on the lower side of the substrate. A first light extraction structure is formed on the lower side of the substrate.

Description

TECHNICAL FIELD [0001] The present invention relates to a light emitting diode (LED) module, a light emitting diode module, and a method of manufacturing the same.

The present invention relates to a light emitting diode device, a light emitting diode module and a manufacturing method thereof, and more particularly, to a light emitting diode device for improving overall light extraction efficiency by a light extracting structure formed by patterning a lower surface of a substrate, And a method for producing the same.

In recent years, along with the rapid development of information technology and mobile communication technology, development of a display device capable of visually displaying information has also been dramatically performed. The display device has a projection type, direct type, virtual image type, hologram And the direct type display is largely classified into a self light emitting type display having a light emitting property itself and a non-light emitting type capable of emitting light with an external factor.

In recent years, the development trend has been made in order to satisfy various demands such as high luminance, high-speed response characteristics, high emission intensity, and the total number of manufacturing processes, Organic Electroluminescent (LED), and Light Emitting Diode (LED) are rapidly replacing the existing display device market.

Particularly, light emitting diodes (LEDs) are widely used as light sources for displays with features such as small size, low power consumption and high reliability, and materials of light emitting diodes that have been put to practical use include AlGaAs, GaAlP, GaP, Group compound semiconductors using As and P as Group 5 elements such as InGaAlP are used for red, orange, yellow, and green light emission, and for the green, blue, and ultraviolet regions, GaN- A semiconductor is used, and a light emitting diode having high light emission intensity is realized.

1, a buffer layer 6, an n-type semiconductor layer 2, an active layer 3, a p-type semiconductor layer 4, and a p-type semiconductor layer 5 are formed on a sapphire substrate 1, Type semiconductor layer 2 is formed on the sapphire substrate 1. The transparent electrode 7 is formed of an n-type metal electrode 8 and a p-type metal electrode 9. The buffer layer 6 is formed on the sapphire substrate 1, The active layer 3 and the p-type semiconductor layer 4 are successively grown in order to form the n-type metal electrode 8. A part of the p-type semiconductor layer 8 is etched to the n-type semiconductor layer 8, , And a n-type metal electrode 8 and a p-type metal electrode 9 are deposited.

The efficiency of light generated in such a light emitting diode device is divided into internal quantum efficiency and external quantum efficiency, that is, light extraction efficiency. The internal quantum efficiency is determined according to the design and quality of the active layer. In the case of light extraction efficiency, It is determined according to the extent to which the light exits to the outside of the light emitting diode element, which is determined by the refractive index and the critical angle.

That is, in order to emit light into a gallium nitride (GaN) material having a constant refractive index in the case of light extraction efficiency or an air having a refractive index of 1 in the case of sapphire, the critical angle must be exceeded. In the case of a conventional LED device, The probability of light emitted from the active layer to be emitted to the outside due to total internal reflection within the device is very low. In addition, a difference in refractive index between the sapphire substrate and the semiconductor stacked structure and light absorption in the package during the packaging process may cause the light emitted from the active layer to disappear or not be emitted to the outside of the LED device.

To this end, Korean Patent Registration No. 10-1141269 discloses a light emitting diode device for improving light extraction efficiency by providing a pattern portion formed between a substrate and an active layer. However, And the loss of light emitted to the lower portion can not be minimized. There is still room for improvement in the light extraction efficiency and there is still a need to maximize the light extraction efficiency.

KR 10-1141269 B1

SUMMARY OF THE INVENTION It is an object of the present invention to provide a light emitting diode device and a light emitting diode device having the same, A light emitting diode module, and a method of manufacturing the same.

Also, the present invention provides a light emitting diode device, a light emitting diode module and a method of manufacturing the same for improving overall light extraction efficiency by a light extracting structure formed by patterning a lower surface of a substrate.

According to an aspect of the present invention, there is provided a light emitting diode device comprising:

A substrate having opposed upper and lower surfaces; a semiconductor stacked structure including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, the semiconductor stacked structure being positioned on an upper surface of the substrate; And a reflective layer positioned below the lower surface of the substrate, wherein a first light extracting structure is formed on a lower surface of the substrate,

The first light extracting structure may have a concave-convex structure in which a plurality of convex portions or concave portions are arranged,

The convex portion or the concave portion may be formed by patterning the lower surface of the substrate,

A second light extracting structure may be formed on the upper surface of the substrate,

The second light extracting structure may have a concave-convex structure in which a plurality of convex portions or concave portions are arranged,

The convex portion or the concave portion of the second light extracting structure may be arranged at a corresponding position between the convex portion or the concave portion formed in the first light extracting structure,

At least one side surface of the substrate and the semiconductor laminated structure may be formed to be inclined with respect to the vertical direction of the substrate.

According to another aspect of the present invention, there is provided a light emitting diode module including: the light emitting diode device; And a reflective cup which receives the light emitting diode element therein and is formed in a cup shape having a wider width toward the upper side and reflects upward the light emitted to the side of the light emitting diode element.

According to another aspect of the present invention, there is provided a method of manufacturing a light emitting diode device,

Patterning the lower surface of the substrate; Forming a reflective layer under the lower surface of the substrate; And forming a semiconductor stacked structure including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on an upper surface of the substrate,

The process of patterning the lower surface of the substrate may be a concavo-convex shape in which a plurality of convex portions or concave portions are arranged,

The convex portion or the concave portion may be formed by dry or wet etching the lower surface of the substrate,

The method may further include patterning an upper surface of the substrate,

The process of patterning the upper surface of the substrate may include forming a plurality of convex portions or concave portions at corresponding positions between convex portions or concave portions formed on the lower surface of the substrate,

The method may further include forming at least one side surface of the substrate and the semiconductor laminated structure so as to be inclined with respect to a vertical direction of the substrate.

According to the light emitting diode device, the light emitting diode module and the manufacturing method thereof according to the embodiment of the present invention, the reflection layer is formed under the light emitting diode device to minimize the loss of light emitted to the bottom, There is a remarkable effect that the amount of light emitted to the side of the light emitting diode device is increased by the light extracting structure to maximize the light extraction efficiency as a whole.

In addition, the light extracting structure may be formed in a concave-convex structure having a predetermined shape to change the angle of incidence of the light by minimizing the light loss and to reduce the light extraction efficiency in which light generated in the active layer is emitted to the outside of the light emitting diode There is a remarkable effect that the present invention can drastically improve the performance of the apparatus.

In addition, since the bottom surface of the substrate having a predetermined thickness is directly patterned by a dry or wet etching method to form the first light extracting structure, the manufacturing process can be simplified and the stability of the light emitting diode module, There is a remarkable effect that the optical characteristics can be effectively improved.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a light emitting diode element according to the prior art; Fig.
2 is a cross-sectional view showing various forms of a light emitting diode device according to an embodiment of the present invention;
FIG. 3 is a graph showing optical output magnitudes of various types of light emitting diode devices according to an embodiment of the present invention. FIG.
4 is a cross-sectional view showing an optical path of a light emitting diode device according to an embodiment of the present invention.
5 is a cross-sectional view showing the shape of a light emitting diode device according to another embodiment of the present invention.
6 is a cross-sectional view illustrating a light path and a light emitting diode module according to an embodiment of the present invention.

The light emitting diode device, the light emitting diode module and the manufacturing method thereof according to the present invention provide a technical feature that can improve the overall light extraction efficiency by the light extracting structure formed by patterning the lower surface of the substrate.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, Is provided to fully inform the user. Wherein like reference numerals refer to like elements throughout.

2 is a cross-sectional view showing various forms of a light emitting diode device according to an embodiment of the present invention.

Referring to FIG. 2, a light emitting diode device 100 according to an embodiment of the present invention includes a substrate 10 having opposing upper and lower surfaces; a semiconductor stacked structure 60 including an n-type semiconductor layer 30, an active layer 40, and a p-type semiconductor layer 50 and located on an upper surface of the substrate 10; And a reflective layer 80 positioned under the lower surface of the substrate 10. A first light extracting structure 14 is formed on the lower surface of the substrate 10. [

Herein, the description of the top and bottom in the relationship between the respective layers is used for convenience of description, it is not necessary that the plurality of layers are in direct contact with each other, and one or more other layers having other functions Of course, be inserted.

The substrate 10 has upper and lower surfaces opposed to each other and is formed of a substrate 10 suitable for epitaxially growing compound semiconductors in a single crystal or epitaxial manner. The substrate 10 may be made of a transparent material such as sapphire, gallium nitride (GaN), zinc oxide (ZnO), silicon carbide (SiC), aluminum nitride (AlN), glass, silicon or PET. But is not limited thereto.

The semiconductor laminated structure 60 includes an n-type semiconductor layer 30, an active layer 40 and a p-type semiconductor layer 50. The semiconductor laminated structure 60 is located on the upper surface of the substrate 10. The n-type semiconductor layer 30, the active layer 40, and the p-type semiconductor layer 50 may be formed of a compound semiconductor material doped with each conductive impurity. The n-type semiconductor layer 30, the active layer 40 and the p-type semiconductor layer 50 may be formed of, for example, In _x Al _y Ga _{1 -x- y} N composition formula (where 0? _X? 1, 1, 0? X + y? 1), but is not particularly limited to these materials.

The n-type semiconductor layer 30 may be formed of a compound semiconductor layer doped with an n-type conductivity-type impurity, and examples of the n-type conductivity-type impurity may include Si, Ge, and Sn, Si is mainly used.

The active layer 40 may be formed of a single quantum well layer or a multiple quantum well layer composed of a double hetero structure or an InGaN / GaN layer.

The p-type semiconductor layer 50 may be formed of a GaN layer or a GaN / AlGaN layer doped with a p-type conductivity type impurity. For example, Mg, Zn, Be or the like may be used as the p- And Mg is preferably mainly used.

The semiconductor stacked structure 60 includes a GaN buffer layer 20, an n-type / p-type cladding layer, a p-type cap layer, and the like for improving lattice matching with the substrate 10 formed of a material such as sapphire on the substrate 10 And may further include functional layers that perform various functions of the system. Although not shown, a part of the semiconductor stacked structure 60 is removed through an etching process to expose the n-type semiconductor layer 30 and the p-type semiconductor layer 50 to an n-type electrode (not shown) And electrodes (not shown) may be formed to be electrically ohmic contacted. The structure of the transparent electrode 70, the n-type electrode, and the p-type electrode is the same as that of the known art, and a detailed description thereof will be omitted.

The reflective layer 80 is located below the lower surface of the substrate 10, that is, below the lower surface. The reflective layer 80 is a layer for reflecting light in an upward direction that can contribute to light emission so that the light generated in the active layer 40 of the semiconductor stacked structure 60 is not emitted or absorbed to the bottom, (DBR layer), which is formed by alternately laminating a metal reflection layer forming a mirror surface or oxide layers having different refractive indexes (e.g., SiO ₂ and TiO ₂ ). In order to improve the bonding property with the substrate 10, an SiO ₂ layer may be further included between the metal reflection layer and the substrate 10, or the SiO ₂ layer may be formed to contact the substrate 10 in the injection Bragg reflection layer.

A first light extracting structure 14 is formed on the bottom surface of the substrate 10 to change the angle of incidence of light generated in the active layer 40 and effectively emit the light to the top or side of the light emitting diode device 100. That is, the first light extracting structure 14 has a reflecting surface or a refracting surface that changes the incident angle of light so that light is incident at an incident angle different from the incident angle of the light incident on the reflecting surface of the reflecting layer 80, The light emitted from the light emitting diode device 100 is emitted to the upper side or the side surface of the light emitting diode device 100 by changing the light path by reflecting or refracting the light that has passed through the compound semiconductor structure and reaches the lower surface of the substrate 10 A pyramid shape, a cone shape, a wedge shape, a triangular pyramid shape, a quadrangular pyramid shape, or a shape extending in one direction.

The first light extracting structure 14 may have a convex or concave structure in which a plurality of concave portions as shown in FIG. 2 are arranged, and the convex or concave portion is formed by patterning the lower surface of the substrate 10.

More specifically, in order to form the first light extracting structure 14 by arranging a large number of convex portions or concave portions on the lower surface of the substrate 10, an etching mask having an opening with a desired shape is formed on the lower surface of the substrate 10 The substrate 10 is patterned by wet etching or dry etching to form a concave-convex structure and then a reflective layer 80 is formed under the lower surface of the substrate 10 so that the material forming the reflective layer 80 is sandwiched between the convex portions Or at least a part of the concave portion is filled to form the first light extracting structure 14 having the concavo-convex structure as described above.

The first light extracting structure 14 formed on the lower surface of the substrate 10 forms an oxide layer (for example, an SiO ₂ layer) under the lower surface of the substrate 10 and the oxide layer is etched using an etching mask And then forming a concave-convex structure on the concave-convex structure, and then forming a reflective layer 80 on the convex-concave structure. However, in consideration of the fact that it is easier to directly etch the substrate 10 having a predetermined thickness than the oxide layer having a fine thickness and to raise the cost due to the addition of the manufacturing process, It is more efficient to form the first light extracting structure 14 by patterning the lower surface.

The incident angle of the light generated in the active layer 40 is changed on the upper surface of the substrate 10 of the light emitting diode device 100 according to the embodiment of the present invention to enter the substrate 10 through the compound semiconductor structure, A second light extracting structure 12 may be further formed for effectively emitting light toward the side of the device 100. [

The second light extracting structure 12 has a refractive index different from that of the compound semiconductor structure. When light from the active layer 40 passes through the compound semiconductor structure and reaches the upper surface of the substrate 10, the second light extracting structure 12 changes its incident angle to refract or reflect For example, a semi-spherical shape, a pyramidal shape, a cone shape, a wedge shape, a triangular-pyramid shape, a quadrangular pyramid shape or a shape extending in one direction for effectively emitting the light to the upper side or the side surface of the LED element 100.

In addition, the second light extracting structure 12 may be formed in a concave-convex structure in which a plurality of convex portions or concave portions are arranged on the upper surface of the substrate 10. The convex-concave structure may be formed by patterning the substrate 10 by dry or wet using an etching mask. In this case, the convex portions may be made of the same material as the substrate 10.

For example, in the case of the sapphire substrate 10, the convex portion of the second light extracting structure 12 is also made of sapphire and has a refractive index of 1.78 and a refractive index of 2.4. The light path is refracted at the convex portion due to the difference in refractive index. In addition, the convex portion may be formed by forming an oxide layer (for example, a SiO ₂ layer having a refractive index of 1.4) on the upper surface of the substrate 10 and etching the oxide layer.

On the other hand, convex portions of the second light extracting structure 12 formed on the upper surface of the substrate 10 are provided apart from each other to provide a nucleation position for growth of the semiconductor stacked structure 60 formed on the substrate 10 . When the semiconductor laminated structure 60 is formed on the substrate 10 partially exposed between the convex portions as described above, the semiconductor laminated structure 60 can be formed as a single crystal or an epitaxial .

The second light extracting structure 12 may be formed as a concave portion that is recessed from the upper surface of the substrate 10 to the inside of the substrate 10. The concave portion may be filled with at least one of air (refractive index 1), oxide (for example, SiO ₂ having a refractive index of 1.4) or semiconductor laminated structure 60. When a concave portion is formed on the upper surface of the substrate 10 as described above, when a part of the gallium nitride based semiconductor laminate structure 60 having a refractive index of 2.4 reaches the concave portion through the light, air / semiconductor, oxide, The light path is changed due to the difference in refractive index between the substrates 10.

2 (c), the convex portion or concave portion of the second light extracting structure 12 is located at a position corresponding to the convex portion or the concave portion formed in the first light extracting structure 14 Respectively. The size of the light output of the light emitting diode device 100 in which the second light extracting structure 12 of the above structure is formed will be described later in connection with the type E of FIG.

FIG. 3 is a graph showing optical output sizes of various types of light emitting diode devices according to an embodiment of the present invention, and FIG. 4 is a cross-sectional view illustrating an optical path of a light emitting diode device according to an embodiment of the present invention.

3 shows a structure (hereinafter referred to as A type) in which a separate light extracting structure is not formed on the top and bottom surfaces of the substrate 10 according to the related art, (Hereinafter referred to as B type) and the structure in which the first light extracting structure 14 is formed on the lower surface of the substrate 10 according to the embodiment of the present invention (Hereinafter referred to as D type) in which a first light extracting structure 14 and a second light extracting structure 12 are formed on a lower surface and an upper surface of a substrate 10, respectively, (Hereinafter referred to as E type) arranging convex portions or concave portions of the second light extracting structure 12 at positions corresponding to the convex portions or the concave portions of the extraction structure 14 Graph.

3, in the case of the A type, the output of light emitted through the upper surface of the light emitting diode device 100 is larger than the output of light emitted through the side surface, and the reflective layer 80 is formed on the lower surface, It can be seen that the total light output of the light emitting diode device 100 is similar to the sum of the light output through the top surface and the side surface.

In the case of the B type in which the light extracting structure is formed only on the upper surface of the substrate 10, the light output size emitted through the upper surface or the side surface of the light emitting diode element 100 is increased as compared with the A type, However, when the light extracting structure is formed only on the upper surface of the substrate 10, sufficient light output is not improved.

Generally, the light generated in the active layer of the light emitting diode element can escape to the top surface, the bottom surface, or the side surface, but is generated between the air and the semiconductor layer (for example, a gallium nitride based semiconductor layer having a refractive index of 2.4) The probability of escaping to the side of the light emitting diode element due to the difference in refractive index is reduced. On the other hand, when the light directed toward the lower surface enters the sapphire substrate, the light is absorbed in the substrate or absorbed by the package of the LED element. The reflection layer 80 may be formed under the sapphire substrate (see A type) to minimize the probability of being absorbed by the package of the light emitting diode device. However, the light reflected upward in the reflection layer 80 may also be a sapphire substrate, The gallium-based semiconductor layer, and the high refractive index of air. Accordingly, there is a need for a structure that allows light to be extracted easily, light is extracted through the side surface of the light emitting diode device so that the light path inside the substrate and the semiconductor laminated structure becomes long and light absorption does not occur.

In the case of the C type in which the first light extracting structure 14 is formed on the lower surface of the substrate 10 according to the embodiment of the present invention, The output of the emitted light is greatly increased, and the output of the light is increased compared with the case of the B type. On the other hand, it can be seen that although the increase in light output through the top surface increases somewhat, the increase in light output through the side surface is much greater and the increase in total light output is mainly due to the increase in light output through the side surface. As compared with the structure for forming the light extracting structure on the upper surface of the substrate 10 according to the conventional art, the structure of the structure for forming the first light extracting structure 14 on the lower surface of the substrate 10 according to the embodiment of the present invention The reason why the output of light increases is that when the light emitted from the active layer 40 toward the bottom surface is incident on the first light extracting structure 14 at an incident angle different from the incident angle of the incident light to the reflective layer 80, Is reflected or refracted on the reflecting surface or the refracting surface of the first light extracting structure 14 so as to face the side surface of the light emitting diode device and the inner reflection or internal refraction does not occur again on the side surface of the light emitting diode device 100, Since a larger amount of light is emitted to the side surface of the element 100.

In the case of the D type in which the first light extracting structure 14 and the second light extracting structure 12 are formed on the lower surface and the upper surface of the substrate 10 according to the embodiment of the present invention, It can be seen that the total amount of light is increased and the amount of light emitted through the side of the first light extracting structure 14 increases. The light output through the side surface of the light emitting diode device 100 is further increased as compared with the D type light emitting device in the case of arranging the convex portion or the concave portion of the structure 12, respectively. In addition, in the case of the E-type light emitting diode device 100, the light output through the side surface is improved more than twice as compared with the general A-type or B-type light emitting diode device 100.

This is because the incident angle of the light that can be eliminated by the internal refraction in the light emitting diode element 100 is changed by the first light extracting structure 14 and the second light extracting structure 12 to be easily released to the side , It can be seen that the optical output of the light emitted to the side is significantly improved in the case of the C type, the D type and the E type according to the embodiment of the present invention.

5, the light emitting diode device 100 according to another embodiment of the present invention includes a substrate 10, a p-type semiconductor layer 50, an active layer 40, an n-type semiconductor layer 30, At least one of the side surfaces of the semiconductor stacked structure 60 is inclined with respect to the vertical direction of the substrate 10 to more effectively emit light reflected from the lower surface of the substrate 10 to the side surface. Preferably, at least one of the substrate 10 and the semiconductor laminated structure 60 is formed so as to have a narrower width toward the upper portion thereof, thereby facilitating the lateral light emission.

6 is a cross-sectional view illustrating a light emitting diode module and an optical path according to an embodiment of the present invention.

Referring to FIG. 6, a light emitting diode module according to an embodiment of the present invention includes a light emitting diode device 100 according to an embodiment of the present invention; And a reflective cup 200 (see FIG. 1) for receiving the light emitted from the light emitting diode device 100 and reflecting the light emitted toward the side of the light emitting diode device 100, ).

As described above, when the first light extracting structure 14 is formed on the lower surface of the substrate 10, the output of light emitted through the side surface of the light emitting diode device 100 is greatly increased, Or refraction of light emitted to the side surface of the light emitting diode device 100 by the reflective cup 200 whose inner inclined surface and bottom surface are mirror-coated, improves light extraction efficiency, The loss can be minimized.

Hereinafter, a method of manufacturing a light emitting diode device according to an embodiment of the present invention will be described in detail. The elements overlapping with those described above in connection with the structure of the light emitting diode device according to the embodiment of the present invention will be omitted.

A method of fabricating a light emitting diode device 100 according to an embodiment of the present invention includes: patterning a lower surface of a substrate 10; Forming a reflective layer (80) under the lower surface of the substrate (10); And forming a semiconductor stacked structure 60 including an n-type semiconductor layer 30, an active layer 40, and a p-type semiconductor layer 50 on the upper surface of the substrate 10. The process of patterning the lower surface of the substrate 10 may form the first light extracting structure 14 in a concavo-convex shape in which a plurality of convex or concave portions are arranged, and the shape of the first light extracting structure 14 A pyramid, a cone wedge, or a shape extending in one direction.

The first light extracting structure 14 has a reflective surface or a refracting surface that changes the incident angle of light incident on the side surface of the light emitting diode device 100. The first light extracting structure 14 is formed from the active layer 40, So that the light is efficiently emitted to the upper side or the side surface of the light emitting diode element 100 by changing the light path. That is, the first light extracting structure 14 reflects or refracts a larger amount of light toward the side of the light emitting diode element 100, and is reflected or refracted by the first light extracting structure 14 Is incident on the side surface of the light emitting diode device 100 at a larger incident angle than that in a normal case, and can be emitted to the outside without being reflected or refracted inward from the side surface of the light emitting diode device 100.

In order to form the first light extracting structure 14 by arranging a plurality of convex portions or concave portions on the lower surface of the substrate 10, an etching mask having an opening having a desired shape is formed on the lower surface of the substrate 10, A reflective layer 80 is formed under the lower surface of the substrate 10 so as to form a concave-convex structure by patterning the substrate 10 by a dry etching method so that a material constituting the reflective layer 80 is interposed between convex portions or at least part So that the first light extracting structure 14 having the concavo-convex structure as described above is formed.

Here, the first light extracting structure 14 may be formed by forming an oxide layer (for example, a SiO ₂ layer) under the lower surface of the substrate 10 and patterning the oxide layer using an etching mask to form a concave- Although it is possible to form the reflective layer 80 below the lower surface of the substrate 10, it is easier to directly etch the substrate 10 having a predetermined thickness than to etch the oxide layer having a small thickness, It is more efficient to form the first light extracting structure 14 by patterning the lower surface of the substrate 10 in consideration of the problem of cost increase due to the addition of the process.

The manufacturing method of the light emitting diode device 100 according to the embodiment of the present invention may further include forming the second light extracting structure 12 by patterning the upper surface of the substrate 10.

The second light extracting structure 12 has a refractive index different from that of the compound semiconductor structure. When light from the active layer 40 passes through the compound semiconductor structure and reaches the upper surface of the substrate 10, the second light extracting structure 12 changes its incident angle to refract or reflect For example, a semi-spherical shape, a pyramidal shape, a cone shape, a wedge shape, a triangular-pyramid shape, a quadrangular pyramid shape or a shape extending in one direction for effectively emitting the light to the upper side or the side surface of the LED element 100.

In addition, the second light extracting structure 12 may be formed in a concave-convex structure in which a plurality of convex portions or concave portions are arranged on the upper surface of the substrate 10. The convex-concave structure may be formed by patterning the substrate 10 by dry or wet using an etching mask. In this case, the convex portions may be made of the same material as the substrate 10.

In addition, in the process of patterning the upper surface of the substrate 10, the upper surface of the substrate 10 may be provided at a position corresponding to the convex portion or the concave portion of the first light extracting structure 14 formed on the lower surface of the substrate 10 When the convex portion or the concave portion of the second light extracting structure 12 to be formed is arranged so as to be aligned with each other, the output of light emitted through the side surface of the light emitting diode element 100 is further increased as described above.

The method of manufacturing the light emitting diode device 100 according to the embodiment of the present invention is a method of manufacturing the semiconductor laminated structure 60 (including the substrate 10 and the p-type semiconductor layer 50, the active layer 40, May be formed to be inclined so as to more effectively emit light reflected from the lower surface of the substrate 10 to the side surface. Preferably, at least one of the substrate 10 and the semiconductor laminated structure 60 is formed to have a narrower width toward the upper portion, so that the light emitted to the side can be easily refracted upward.

While the preferred embodiments of the present invention have been described and illustrated above using specific terms, such terms are used only for the purpose of clarifying the invention, and the embodiments of the present invention and the described terminology are intended to be illustrative, It will be obvious that various changes and modifications can be made without departing from the spirit and scope of the invention. Such modified embodiments should not be understood individually from the spirit and scope of the present invention, but should be regarded as being within the scope of the claims of the present invention.

10: substrate 12: second light extracting structure
14: first light extracting structure 20: buffer layer
30: n-type semiconductor layer 40: active layer
50: p-type semiconductor layer 60: semiconductor laminated structure
70: transparent electrode 80: reflective layer
100: Light emitting diode element 200: Reflective cup

Claims (12)

A substrate having opposed upper and lower surfaces;
a semiconductor stacked structure including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, the semiconductor stacked structure being positioned on an upper surface of the substrate; And
And a reflective layer positioned under the lower surface of the substrate,
And a first light extracting structure is formed on a lower surface of the substrate.
The method according to claim 1,
Wherein the first light extracting structure has a concavo-convex structure in which a plurality of convex portions or concave portions are arranged.
The method of claim 2,
And the convex portion or the concave portion is formed by patterning the lower surface of the substrate.
The method according to claim 1,
And a second light extracting structure having a concavo-convex structure in which a plurality of convex portions or concave portions are arranged is formed on an upper surface of the substrate.
The method of claim 4,
Wherein a convex portion or a concave portion of the second light extracting structure is arranged at a corresponding position between convex portions or concave portions formed in the first light extracting structure.
The method according to any one of claims 1 to 5,
Wherein at least one side surface of the substrate and the semiconductor laminated structure is formed to be inclined with respect to the vertical direction of the substrate.
A light emitting diode element according to any one of claims 1 to 5; And
And a reflective cup which is formed in a cup shape that receives the light emitting diode element therein and widens in width and reflects light emitted to the side of the light emitting diode element upward.
Patterning the lower surface of the substrate;
Forming a reflective layer under the lower surface of the substrate; And
And forming a semiconductor stacked structure including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on an upper surface of the substrate.
The method of claim 8,
Wherein the step of patterning the lower surface of the substrate is a step-like shape in which a plurality of convex portions or concave portions are arranged.
The method of claim 9,
Wherein the convex portion or the concave portion is formed by dry or wet etching the lower surface of the substrate.
The method of claim 8,
Further comprising patterning an upper surface of the substrate,
Wherein the step of patterning the upper surface of the substrate is performed such that a plurality of convex portions or concave portions are arranged at corresponding positions between convex portions or concave portions formed on the lower surface of the substrate.
The method of claim 8,
Further comprising forming at least one side surface of the substrate and the semiconductor laminated structure so as to be inclined with respect to a direction perpendicular to the substrate.

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