KR20150075026A - Adhesive film, dicing·die bond film, manufacturing method for semiconductor device, and semiconductor device - Google Patents

Abstract

The present invention aims to provide an adhesive film which enables a semiconductor with high reliability to be manufactured at a high yield, and uses thereof. The adhesive film is used to embed a first semiconductor device fixated on an adherend and to fixate a second semiconductor device, different from the first semiconductor device, on an adherend; has melt viscosity of 50-500 Pa·s at the sheer speed of 50s^(-1) at 120°C; and preferably has a storage modulus of 10-10000 MPa at 25°C before being thermally cured.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an adhesive film, a dicing die-bonding film, a semiconductor device manufacturing method, and a semiconductor device.

The present invention relates to an adhesive film, a dicing die-bonding film, a method of manufacturing a semiconductor device, and a semiconductor device.

BACKGROUND ART Conventionally, silver paste has been used for fixing a semiconductor chip to a substrate or an electrode member in manufacturing a semiconductor device. In such a fixing process, a paste-type adhesive is applied to a semiconductor chip or a lead frame, the semiconductor chip is mounted on a substrate via a paste-type adhesive, and finally, the paste-type adhesive layer is cured.

However, as a paste-like adhesive, there is a large variation in the application amount of coating and application form, which makes it difficult to make uniformity, or requires a special apparatus or a long time for application. Therefore, a dicing die-bonding film has been proposed in which a semiconductor wafer is adhered and held in a dicing step, and an adhesive film for chip fixing necessary for a mounting process is also provided (see Patent Document 1).

This type of dicing die-bonding film has a structure in which a die-bonding film (adhesive film) is laminated on the dicing film. The dicing film is a structure in which a pressure-sensitive adhesive layer is laminated on a supporting substrate. This dicing die-bonding film is used as follows. That is, after the semiconductor wafer and the adhesive film are diced under the holding of the adhesive film, the supporting substrate is stretched to peel the semiconductor chip together with the adhesive film, and these are separately recovered. Further, the semiconductor chip is bonded and fixed to an adherend such as a BT substrate or a lead frame via an adhesive film. When the semiconductor chips are stacked in multiple stages, a semiconductor chip with an adhesive film is also adhered and fixed on the fixed semiconductor chip via an adhesive film.

However, the semiconductor device and its package have become increasingly sophisticated, thin, and miniaturized. As one of such measures, a three-dimensional mounting technique has been developed in which semiconductor elements are stacked in a plurality of stages in the thickness direction thereof to achieve high-density integration of semiconductor elements.

As a general three-dimensional mounting method, a procedure is used in which a semiconductor element is fixed on an adherend such as a substrate, and semiconductor elements are sequentially layered on the semiconductor element at the lowermost stage. Electrical connection is mainly made by bonding wires (hereinafter also referred to as " wires ") between semiconductor elements and between semiconductor elements and an adherend. Film-like adhesives are widely used for fixing semiconductor devices.

In such a semiconductor device, a control semiconductor element (hereinafter also referred to as a " controller ") is disposed on the uppermost semiconductor element for the purpose of controlling individual operations of the plurality of semiconductor elements or controlling communication between semiconductor elements Patent Document 2).

Japanese Patent Application Laid-Open No. 2010-074144 Japanese Patent Application Laid-Open No. 2007-096071

As in the case of the semiconductor element at the lower end of the controller, electrical connection with the adherend is achieved by the wire. However, as the number of stacked semiconductor elements increases, the distance between the controller and the adherend becomes longer, and the wires necessary for electrical connection become longer. As a result, if the quality of the semiconductor package deteriorates due to a wire shortage caused by a communication speed of the semiconductor package or an external factor (heat or impact), or the wire bonding process is complicated, .

Accordingly, the inventors of the present invention have developed an adhesive film for pouches capable of fixing a controller to an adherend and fixing other semiconductor elements while embedding the controller, and filed applications therefor Unofficially).

By using such an adhesive film as an adhesive film of the dicing die-bonding film, it becomes possible to improve the manufacturing efficiency of the semiconductor device and to improve the quality of the semiconductor device.

However, as one problem, the surface structure of the adherend becomes complicated because a semiconductor element such as a controller is fixed on the adherend, so that the adhesion between the adherend (and elements on the surface thereof) May be deteriorated. In this case, voids are generated between the two, which may lead to a reduction in the reliability of the finally obtained semiconductor device.

As another problem, there is a case where the second and subsequent semiconductor elements are placed on an adherend with an adhesive film interposed therebetween, and then the adhesive film is heated while being pressurized under heat. The adhesive film may be deformed by the applied pressure depending on the state of the adhesive film so that the fixing position of the semiconductor element to be fixed is displaced with respect to a desired position. As a result, it becomes difficult to wire-bond the semiconductor elements in the second and subsequent stages or to laminate the semiconductor elements in a single layer, leading to a decrease in the yield of the semiconductor device.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object thereof is to provide an adhesive film which can be manufactured with high yield of a highly reliable semiconductor device and its use.

The inventors of the present invention have extensively studied the characteristics of the adhesive film in order to solve the above-mentioned conventional problems. As a result, it has been found that the above object can be achieved by the following constitution, and the present invention has been accomplished.

That is, in a first embodiment of the present invention, an adhesive film for embedding a first semiconductor element fixed on an adherend and fixing a second semiconductor element different from the first semiconductor element to an adherend (hereinafter referred to as "Quot;, " an adhesive film for forming pores "),

And has a melt viscosity at a shear rate of 50s < ^-1 > at 120 DEG C of 50 Pa · s or more and 500 Pa · s or less.

In the adhesive film, the melt viscosity at a shear rate of 50 s < ^-1 > at 120 DEG C is not less than 50 Pa · s and not more than 500 Pa · s. When the second semiconductor element is fixed to the adherend by the adhesive film, The adhesion property of the adhesive film to the surface structure of the adherend including one semiconductor element can be enhanced and the adhesiveness between the adhesive film for forming a puck and the adherend can be improved. As a result, generation of voids in the semiconductor device can be prevented, and a highly reliable semiconductor device can be manufactured. At the same time, when the second semiconductor element is fixed to the adherend by the adhesive film, the adhesive film can be prevented from coming out from the region of the second semiconductor element in a plan view. Further, since the first semiconductor element on the adherend can be embedded, the influence of external factors can be reduced while maintaining the communication speed between the adherend and the first semiconductor element, and a high-quality semiconductor device can be manufactured with high yield. The method of measuring the melt viscosity is as described in Examples.

The storage elastic modulus of the adhesive film before heat curing at 25 DEG C is preferably 10 MPa or more and 10,000 MPa or less. In the form of a dicing die-bonding film in which the adhesive film and the dicing tape are integrated, the semiconductor wafer bonded to the adhesive film is diced into semiconductor chips and the adhesive film is also separated. By setting the storage elastic modulus of the adhesive film to the lower limit or higher, it is possible to prevent re-adhesion of the adjacent adhesive films. In addition, by setting the upper limit to the above range, good adhesion with the semiconductor wafer can be exhibited.

It is preferable that the adhesive film contains an inorganic filler and the content of the inorganic filler is 10 to 80% by weight. By including the predetermined amount of the inorganic filler in the adhesive film, it is possible to exhibit ease of embedding, prevention of coming out, and ease of operation at a higher level.

According to a first aspect of the present invention, there is provided a dicing film comprising a substrate and a pressure-sensitive adhesive layer formed on the substrate,

And a dicing die-bonding film having the adhesive film laminated on the pressure-sensitive adhesive layer.

Since the dicing die-bonding film of the first embodiment of the present invention is provided with the adhesive film, a highly reliable semiconductor device can be manufactured with a high yield.

In addition, in the first embodiment of the present invention,

An adherend preparing step of preparing an adherend to which the first semiconductor element is fixed,

A bonding step of bonding the adhesive film of the dicing die-bonding film and the semiconductor wafer,

A dicing step of dicing the semiconductor wafer and the adhesive film to form a second semiconductor element,

A pickup step of picking up the second semiconductor element together with the adhesive film, and

A fixing step of fixing the second semiconductor element to the adherend while embedding the first semiconductor element fixed to the adherend by an adhesive film picked up together with the second semiconductor element

And a method of manufacturing the semiconductor device.

In the manufacturing method of the first embodiment of the present invention, since the semiconductor device is manufactured by using the dicing die-bonding film, generation of voids in the semiconductor device can be prevented, and a highly reliable semiconductor device can be manufactured have. In addition, the pick-up from the dicing can be performed well, and the semiconductor device can be produced efficiently. Further, since the first semiconductor element such as a controller can be fixed on the adherend by the adhesive film, the wire required for electrical connection can be shortened, thereby preventing a decrease in the communication speed of the semiconductor package It is possible to manufacture a high-quality semiconductor device in which occurrence of a problem of a wire due to an external factor is reduced. In addition, in this manufacturing method, since the use of the adhesive film enables the first semiconductor element to be placed on the adherend, the wire bonding of the first semiconductor element and the adherend becomes easy, Can be improved.

In the manufacturing method, the adhesive film has a thickness (T) that is thicker than the thickness (T ₁ ) of the first semiconductor element, the adherend and the first semiconductor element are wire- And the thickness (T ₁ ) is not less than 40 μm and not more than 260 μm. Alternatively, the adhesive film may have a thickness (T) that is thicker than the thickness (T ₁ ) of the first semiconductor element, and the adherend and the first semiconductor element are flip- (T ₁ ) is preferably 10 μm or more and 200 μm or less. The first semiconductor element can be suitably embedded according to the connection style of the first semiconductor element with the adherend.

The first embodiment of the present invention also includes a semiconductor device obtained by the method for manufacturing the semiconductor device.

A second embodiment of the present invention is a semiconductor device manufacturing method comprising the steps of: a first fixing step of fixing a first semiconductor element to an adherend; an element preparing step of preparing a second adhesive film for forming a second semiconductor element and a second semiconductor element; A second fixing step of fixing the second semiconductor element to the adherend while embedding the first semiconductor element fixed to the adherend by the adhesive film for forming a pellicle; and a second fixing step of, after the second fixing step, And a method of manufacturing a semiconductor device including a thermal curing process.

The influence of external factors can be reduced while maintaining the communication speed between the adherend and the first semiconductor element by embedding the first semiconductor element fixed to the adherend by the adhesive film for forming a pellet so that a high- can do. In addition, by thermally curing the forming adhesive film under pressure, voids existing between the forming adhesive film and the first semiconductor element or the like can be reduced, and a highly reliable semiconductor device can be manufactured.

By fixing the first semiconductor element such as the controller to the adherend by means of the adhesive film for pucker, it is possible to shorten the wire necessary for electrical connection, thereby preventing the communication speed from being lowered, It is possible to manufacture a high-quality semiconductor device in which the occurrence of cracks is reduced. Further, by fixing the first semiconductor element such as the controller to the adherend, the wire bonding process can be simplified, and the yield of manufacturing the semiconductor device can be improved.

In the thermosetting step, it is preferable that the thermosetting adhesive film for pouches is thermally cured in an atmosphere of 9.8 × 10 ^-2 MPa or more. Thereby, voids can be effectively reduced.

In the first fixing step, for example, the first semiconductor element can be fixed to the adherend via the first adhesive film. The method for manufacturing a semiconductor device of the present invention preferably further comprises a wire bonding step of electrically connecting the first semiconductor element and an adherend with a bonding wire. At this time, it is preferable that the forming adhesive film has a thickness T that is thicker than the thickness T ₁ of the first semiconductor element, and the difference between the thickness T and the thickness T ₁ is 40 μm or more and 260 μm or less. Thereby, the first semiconductor element can be well embedded.

In the first fixing step, the first semiconductor element can be fixed to the adherend, for example, by flip-chip bonding the first semiconductor element and the adherend. At this time, it is preferable that the forming adhesive film has a thickness T that is thicker than the thickness T ₁ of the first semiconductor element, and the difference between the thickness T and the thickness T ₁ is 10 μm or more and 200 μm or less. Thereby, the first semiconductor element can be well embedded.

The method for manufacturing a semiconductor device according to the second embodiment of the present invention may further include a third fixing step of fixing the third semiconductor element to the second semiconductor element.

The second embodiment of the present invention also relates to an adhesive film for a pouch for use in a method of manufacturing a semiconductor device. The melt viscosity of the mortar adhesive film at 120 캜 is preferably 100 Pa · s or more and 3000 Pas · s or less. Thus, when the second semiconductor element is fixed to the adherend by the adhesive film for forming a pucker, the first semiconductor element can be more easily embedded. The method of measuring the melt viscosity is based on the description of the examples.

The second embodiment of the present invention is also characterized in that a first fixing step of fixing the first semiconductor element to an adherend, a preparing step of preparing a dicing die-bonding film, a step of forming a dicing die- A dicing step of dicing the semiconductor wafer and the forming adhesive film to form a second semiconductor element; a pick-up step of picking up the second semiconductor element together with the forming adhesive film; A second fixing step of fixing the second semiconductor element to the adherend while the first semiconductor element fixed to the adherend is embedded by the forming adhesive for pickup which is picked up together with the second semiconductor element; And a heat curing step of thermally curing the adhesive film under pressure.

A second embodiment of the present invention also relates to a dicing die-bonding film comprising a dicing film having a base material and a pressure-sensitive adhesive layer disposed on the base material, and an adhesive film for forming a pouch disposed on the pressure-sensitive adhesive layer.

The second embodiment of the present invention also relates to a semiconductor device.

A third embodiment of the present invention is an adhesive film for holding a first semiconductor element fixed on an adherend and fixing a second semiconductor element different from the first semiconductor element to an adherend,

The melt viscosity at a shear rate of 50 s < ^-1 > at 100 DEG C is 800 Pa · s or less,

And a melt viscosity at a shear rate of 5s < ^-1 > at 150 DEG C of 50 Pa · s or more.

The adhesive film has a melt viscosity of 800 Pas or less at a shear rate of 50 s < ^-1 > at 100 DEG C, and therefore, when the second semiconductor element is fixed to the adherend by the adhesive film, The followability of the adhesive film with respect to the surface structure of the adherend to be contained can be enhanced, thereby improving the adhesion between the adhesive film for forming a film and the adherend. As a result, generation of voids in the semiconductor device can be prevented, and a highly reliable semiconductor device can be manufactured. Further, since the first semiconductor element on the adherend can be embedded, the influence of external factors can be reduced while maintaining the communication speed between the adherend and the first semiconductor element, and a high-quality semiconductor device can be manufactured with high yield.

In addition, since the adhesive film has a melt viscosity of 50 Pa · s or more at a shear rate of 5 s ^-1 at 150 ° C., the deformation of the adhesive film during thermal curing by pressure heating after the lamination of the second semiconductor element It is possible to prevent displacement of the fixed position of the second semiconductor element. The method of measuring the melt viscosity is based on the description of the examples.

The storage elastic modulus of the adhesive film before heat curing at 25 DEG C is preferably 10 MPa or more and 10,000 MPa or less. In the form of a dicing die-bonding film in which the adhesive film and the dicing tape are integrated, the semiconductor wafer bonded to the adhesive film is diced into semiconductor chips and the adhesive film is also separated. By setting the storage elastic modulus of the adhesive film to the lower limit or higher, it is possible to prevent re-adhesion of the adjacent adhesive films. In addition, by setting the upper limit to the above range, good adhesion with the semiconductor wafer can be exhibited.

It is preferable that the adhesive film contains an inorganic filler and the content of the inorganic filler is 10 to 80% by weight. When the adhesive film contains a predetermined amount of an inorganic filler, it is possible to exhibit ease of embedding, prevention of coming out, and prevention of element displacement at a higher level.

In a third embodiment of the present invention, a dicing film having a substrate and a pressure-sensitive adhesive layer formed on the substrate,

And a dicing die-bonding film having the adhesive film laminated on the pressure-sensitive adhesive layer.

Since the dicing die-bonding film of the third embodiment of the present invention is provided with the adhesive film, a highly reliable semiconductor device can be manufactured with a high yield.

In the third embodiment of the present invention,

An adherend preparing step of preparing an adherend to which the first semiconductor element is fixed,

A bonding step of bonding the adhesive film of the dicing die-bonding film and the semiconductor wafer,

A dicing step of dicing the semiconductor wafer and the adhesive film to form a second semiconductor element,

A pickup step of picking up the second semiconductor element together with the adhesive film, and

A fixing step of fixing the second semiconductor element to the adherend while embedding the first semiconductor element fixed to the adherend by an adhesive film picked up together with the second semiconductor element

And a method of manufacturing the semiconductor device.

In the manufacturing method according to the third embodiment of the present invention, since the semiconductor device is manufactured using the dicing die-bonding film, generation of voids in the semiconductor device can be prevented, and a highly reliable semiconductor device can be manufactured have. In addition, the pick-up from the dicing can be performed well, and the semiconductor device can be produced efficiently. Further, since the first semiconductor element such as a controller can be fixed on the adherend by the adhesive film, the wire required for electrical connection can be shortened, thereby preventing a decrease in the communication speed of the semiconductor package , It is possible to manufacture a high-quality semiconductor device in which occurrence of a problem of a wire due to an external factor is reduced. In addition, in this manufacturing method, since the use of the adhesive film enables the first semiconductor element to be placed on the adherend, the wire bonding of the first semiconductor element and the adherend is facilitated, Can be improved.

In the manufacturing method, the adhesive film has a thickness (T) that is thicker than the thickness (T ₁ ) of the first semiconductor element, the adherend and the first semiconductor element are wire- And the thickness (T ₁ ) is not less than 40 μm and not more than 260 μm. Alternatively, the adhesive film may have a thickness (T) that is thicker than the thickness (T ₁ ) of the first semiconductor element, and the adherend and the first semiconductor element are flip- (T ₁ ) is preferably 10 μm or more and 200 μm or less. The first semiconductor element can be suitably embedded according to the connection style of the first semiconductor element with the adherend.

The third embodiment of the present invention also includes a semiconductor device obtained by the method for manufacturing the semiconductor device.

1 is a cross-sectional view schematically showing a dicing die-bonding film according to an embodiment of the present invention.
2 is a cross-sectional view schematically showing a dicing die-bonding film according to another embodiment of the present invention.
3A is a cross-sectional view schematically showing a step of a method of manufacturing a semiconductor device according to an embodiment of the present invention.
FIG. 3B is a cross-sectional view schematically showing a step of a method for manufacturing a semiconductor device according to an embodiment of the present invention.
3C is a cross-sectional view schematically showing a step of a method of manufacturing a semiconductor device according to an embodiment of the present invention.
FIG. 3D is a cross-sectional view schematically showing a step of a method of manufacturing a semiconductor device according to an embodiment of the present invention.
3E is a cross-sectional view schematically showing a step of a method of manufacturing a semiconductor device according to an embodiment of the present invention.
FIG. 3F is a cross-sectional view schematically showing a step of a method of manufacturing a semiconductor device according to an embodiment of the present invention.
3G is a cross-sectional view schematically showing a step of a method of manufacturing a semiconductor device according to an embodiment of the present invention.
3H is a cross-sectional view schematically showing a step of a method of manufacturing a semiconductor device according to an embodiment of the present invention.
4A is a cross-sectional view schematically showing a step of a method of manufacturing a semiconductor device according to another embodiment of the present invention.
4B is a cross-sectional view schematically showing a step of a method of manufacturing a semiconductor device according to another embodiment of the present invention.
4C is a cross-sectional view schematically showing a step of a method of manufacturing a semiconductor device according to another embodiment of the present invention.
4D is a cross-sectional view schematically showing a step of a method of manufacturing a semiconductor device according to another embodiment of the present invention.

Embodiments of the present invention will be described below with reference to the drawings. It should be noted that in some or all of the drawings, portions unnecessary for the description are omitted, and portions for enlarging or reducing are shown for ease of explanation.

&Quot; First embodiment "

A first embodiment of the present invention is an adhesive film for holding a first semiconductor element fixed on an adherend and fixing a second semiconductor element different from the first semiconductor element to an adherend,

And has a melt viscosity at a shear rate of 50s < ^-1 > at 120 DEG C of 50 Pa · s or more and 500 Pa · s or less.

≪ Embodiment 1-1 >

In Embodiment 1-1, as shown in Fig. 1, a dicing die (hereinafter, referred to as " dicing die ") in which an adhesive film 22 for embossing is laminated on a dicing film 5 in which a pressure- The shape of the bond film will be described below as an example. In this embodiment mode, electrical connection between the adherend and the first semiconductor element is achieved by wire bonding connection.

≪ Adhesive film &

In the adhesive film 22, the melt viscosity at a shear rate of 50 s < ^-1 > at 120 DEG C is set to 50 Pa · s or more and 500 Pa · s or less. The lower limit of the melt viscosity is preferably 60 Pa · s or more, more preferably 70 Pa · s or more. The upper limit of the melt viscosity is preferably 400 Pa · s or less, more preferably 300 Pa · s or less. By adopting the upper limit, when the second semiconductor element is fixed to the adherend by the adhesive film, the followability of the adhesive film to the surface structure of the adherend is enhanced to improve the adhesiveness of the adhesive film for puckering and the adherend . As a result, generation of voids in the semiconductor device can be prevented, and a highly reliable semiconductor device can be manufactured. At the same time, by employing the lower limit, it is possible to reduce the release of the adhesive film from the area of the second semiconductor element when viewed from the plane when the second semiconductor element is fixed to the adherend by the adhesive film.

The constitution of the adhesive film is not particularly limited, and examples thereof include an adhesive film including only a single layer of an adhesive film, and a multi-layered adhesive film formed by forming an adhesive film on one side or both sides of the core material. The core material may be a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polycarbonate film or the like), a resin substrate reinforced with glass fiber or non- , A silicon substrate, or a glass substrate. Further, it may be used as an integral film in which an adhesive film and a dicing sheet are integrally formed.

The adhesive film is a layer having an adhesive function, and as a constituent material thereof, a thermoplastic resin and a thermosetting resin are used in combination. Further, the thermoplastic resin can be used alone.

(Thermoplastic resin)

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide Resin, a polyamide resin such as 6-nylon or 6,6-nylon, a phenoxy resin, an acrylic resin, a saturated polyester resin such as PET or PBT, a polyamideimide resin or a fluorine resin. These thermoplastic resins may be used alone or in combination of two or more. Among these thermoplastic resins, an acrylic resin which is low in ionic impurities and high in heat resistance and can secure the reliability of a semiconductor element is particularly preferable.

The acrylic resin is not particularly limited, and a polymer containing one or more kinds of esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms, . Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a t-butyl group, an isobutyl group, an amyl group, an isoamyl group, a hexyl group, a heptyl group, An ethyl group, an ethyl group, an ethyl group, an ethyl group, an ethyl group, an ethyl group, an ethylhexyl group, an octyl group, an isooxyl group, a nonyl group, an isononyl group, a decyl group, an isodecyl group, an undecyl group, a lauryl group, a tridecyl group, And practical training.

The other monomer forming the polymer is not particularly limited and includes, for example, a monomer containing a carboxyl group such as acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, (Meth) acrylic acid 2-hydroxypropyl, (meth) acrylic acid 2-hydroxypropyl, (meth) acrylic acid 4-hydroxybutyl, (meth) acrylic acid 6 -Hydroxyhexyl, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) (Meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylamide, ) Acrylate or (meth) acryloyloxynaphthalenesulfonic acid, or a phosphate group-containing monomer such as 2-hydroxyethyl acryloyl phosphate or the like.

(Thermosetting resin)

Examples of the thermosetting resin include a phenol resin, an amino resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. These resins can be used alone or in combination of two or more. Particularly, an epoxy resin containing less ionic impurities or the like which corrodes semiconductor elements is preferable. As the curing agent of the epoxy resin, a phenol resin is preferable.

The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition. Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl Bifunctional epoxy resins or polyfunctional epoxy resins such as phenol novolac type, naphthalene type, fluorene type, phenol novolac type, orthocresol novolak type, trishydroxyphenyl methane type and tetraphenylol ethane type, An epoxy resin such as glycidyl isocyanurate type or glycidyl amine type is used. These may be used alone or in combination of two or more. Of these epoxy resins, novolak type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylol ethane type epoxy resins are particularly preferable. These epoxy resins are rich in reactivity with a phenol resin as a curing agent and have excellent heat resistance.

The phenol resin acts as a curing agent for the epoxy resin. For example, the phenol resin may be a phenol novolac resin, a phenol aralkyl resin, a cresol novolac resin, a tert-butylphenol novolak resin, A phenol resin, a phenol resin, a phenol resin, a phenol resin, a phenol resin, a phenol resin, and a polyoxystyrene. These may be used alone or in combination of two or more. Of these phenolic resins, phenol novolac resins and phenol aralkyl resins are particularly preferable. This is because connection reliability of the semiconductor device can be improved.

The mixing ratio of the epoxy resin to the phenol resin is preferably such that the hydroxyl group in the phenol resin is equivalent to 0.5 to 2.0 equivalents per equivalent of the epoxy group in the epoxy resin component. More suitable is 0.8 to 1.2 equivalents. That is, if the mixing ratio of the two is out of the above range, sufficient curing reaction does not proceed and the properties of the epoxy resin cured product tend to deteriorate.

In the present embodiment, an adhesive film comprising an epoxy resin, a phenol resin and an acrylic resin is particularly preferable. This resin has low ionic impurities and high heat resistance, so that the reliability of the semiconductor element can be secured. In this case, the mixing ratio of the epoxy resin to the phenol resin is 100 to 1300 parts by weight based on 100 parts by weight of the acrylic resin component.

(Crosslinking agent)

In the adhesive film of this embodiment, it is preferable to add, as a crosslinking agent, a polyfunctional compound which reacts with the functional group at the molecular chain terminal of the polymer or the like at the time of production in order to allow the crosslinking to some extent in advance. As a result, it is possible to improve the adhesive property under high temperature and to improve the heat resistance.

As the crosslinking agent, conventionally known ones can be employed. Particularly, polyisocyanate compounds such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylenediisocyanate, 1,5-naphthalene diisocyanate, and adducts of polyhydric alcohol and diisocyanate are more preferable. The amount of the crosslinking agent to be added is usually 0.05 to 7 parts by weight based on 100 parts by weight of the polymer. If the amount of the cross-linking agent is more than 7 parts by weight, the adhesive strength is lowered, which is not preferable. On the other hand, if it is less than 0.05 part by weight, the cohesive force is insufficient. If necessary, other polyfunctional compounds such as an epoxy resin may be included together with such a polyisocyanate compound.

(Inorganic filler)

In the adhesive film of the present embodiment, an inorganic filler may be appropriately compounded depending on the use thereof. The combination of the inorganic filler makes it possible to impart conductivity, improve thermal conductivity, and control the modulus of elasticity. Examples of the inorganic filler include ceramics such as silica, clay, gypsum, calcium carbonate, barium sulfate, alumina oxide, beryllium oxide, silicon carbide and silicon nitride, aluminum, copper, silver, gold, nickel, chromium, , Metals such as palladium and solder, and alloys and other carbon. These may be used alone or in combination of two or more. Of these, silica, particularly fused silica, is suitably used. In addition, by forming the conductive adhesive film by adding conductive fine particles containing aluminum, copper, silver, gold, nickel, chromium, tin, zinc or the like, the occurrence of static electricity can be suppressed. The average particle diameter of the inorganic filler is preferably in the range of 0.1 to 80 탆.

The content of the inorganic filler is preferably from 10 to 80% by weight, more preferably from 20 to 60% by weight, based on the total weight of the components (excluding the solvent) constituting the adhesive film.

(Thermosetting catalyst)

A thermosetting catalyst may be used as a constituent material of the adhesive film. When the adhesive film contains an acrylic resin, an epoxy resin and a phenol resin, the content thereof is preferably 0.01 to 3 parts by weight, more preferably 0.05 to 1 part by weight per 100 parts by weight of the acrylic resin component. By setting the content to the above-mentioned lower limit or more, epoxy groups which have not been reacted at the time of die bonding can be polymerized in a subsequent step to reduce or eliminate the unreacted epoxy groups. As a result, it is possible to manufacture a semiconductor device free from peeling by adhering and fixing a semiconductor element on an adherend. On the other hand, by setting the blending ratio to be not more than the upper limit, the occurrence of curing inhibition can be prevented.

The thermosetting catalyst is not particularly limited, and examples thereof include imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, triphenylborane-based compounds, and trihalogenborane-based compounds. These may be used alone or in combination of two or more.

Examples of the imidazole compound include 2-methylimidazole (trade name: 2MZ), 2-undecylimidazole (trade name: C11Z), 2-heptadecylimidazole (trade name: C17Z) 2-phenylimidazole (trade name: 2PZ), 2-phenyl-4-methylimidazole (trade name: 1.2MZ), 2-ethyl-4-methylimidazole , 1-benzyl-2-methylimidazole (trade name: 1B2MZ), 1-benzyl-2-phenylimidazole 2MZ-CN), 1-cyanoethyl-2-undecylimidazole (trade name: C11Z-CN), 1-cyanoethyl- (2'-methylimidazolyl- (1 ')] - ethyl-s-triazine (trade name: 2MZ-A), 2,4-diamino- (1 ')] - ethyl-s-triazine (trade name C11Z-A), 2,4-diamino-6- [2'-ethyl-4'-methylimidazolyl- (1 ')] - ethyl-s-triazine (trade name 2E4MZ-A), 2,4-diamino-6- [2'-methylimidazolyl- Phenyl-4-methyl-imidazole (product name: 2PHZ-PW), 2-phenyl-4-methyl- 5-hydroxymethylimidazole (trade name: 2P4MHZ-PW) and the like (all available from Shikoku Chemicals Co., Ltd.).

Examples of the triphenylphosphine compound include, but are not limited to, triphenylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, diphenyltolylphosphine TPP-MB), methyltriphenylphosphonium chloride (trade name: TPP-MC), methoxymethyltriphenylphosphine (trade name: TPP-MB), trioctylphosphonium bromide (Trade name: TPP-MOC), benzyltriphenylphosphonium chloride (trade name: TPP-ZC), and the like (all manufactured by HAKKO Chemical Co., Ltd.). The triphenylphosphine-based compound is preferably one which exhibits substantially no decomposition to the epoxy resin. If the epoxy resin is insoluble, it is possible to suppress the excessive progress of the thermosetting. Examples of the thermal curing catalyst having a triphenylphosphine structure and exhibiting substantially no solubility in the epoxy resin include methyltriphenylphosphonium (trade name: TPP-MB) and the like. Means that the thermosetting catalyst comprising a triphenylphosphine-based compound is insoluble in a solvent containing an epoxy resin. In more detail, the term " insoluble in water " Or more by weight of the composition.

The triphenylborane compound is not particularly limited, and examples thereof include tri (p-methylphenyl) phosphine and the like. The triphenylborane compound also includes those having a triphenylphosphine structure. The compound having the triphenylphosphine structure and the triphenylborane structure is not particularly limited and includes, for example, tetraphenylphosphonium tetraphenylborate (trade name: TPP-K), tetraphenylphosphonium tetra-p-triborate (Trade name: TPP-MK), benzyltriphenylphosphonium tetraphenylborate (trade name: TPP-ZK) and triphenylphosphine triphenylborane (trade name: TPP-S) .

The amino compound is not particularly limited, and examples thereof include monoethanolamine trifluoro borate (manufactured by Stella Chemipa) and dicyandiamide (manufactured by Nacalai Tesque).

The trihalogenborane compound is not particularly limited, and examples thereof include trichloroboran.

(Other additives)

In addition to the inorganic filler, other additives may be appropriately added to the adhesive film of the present embodiment, if necessary. Other additives include, for example, flame retardants, silane coupling agents, and ion trap agents.

Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. These may be used alone or in combination of two or more.

Examples of the silane coupling agent include, for example,? - (3,4-epoxycyclohexyl) ethyltrimethoxysilane,? -Glycidoxypropyltrimethoxysilane,? -Glycidoxypropylmethyldiethoxysilane, . These compounds may be used alone or in combination of two or more.

Examples of the ion trap agent include hydrotalcites and bismuth hydroxide. These may be used alone or in combination of two or more.

The storage elastic modulus of the adhesive film before heat curing at 25 캜 is preferably 10 MPa or more and 10,000 MPa or less, more preferably 50 MPa or more and 7000 MPa or less, still more preferably 100 MPa or more and 5,000 MPa or less. By employing the upper limit, good adhesion to a semiconductor wafer can be exhibited. At the same time, by employing the above lower limit, it is possible to prevent re-adhesion between adjacent adhesive films after dicing. By setting the storage elastic modulus at 25 占 폚 within the above-mentioned range, the adhesive property and the pick-up property as an adhesive film can be improved.

<Dicing Film>

Examples of the dicing film include those obtained by laminating a pressure-sensitive adhesive layer 3 on a substrate 4. The adhesive film (22) is laminated on the pressure-sensitive adhesive layer (3). As shown in Fig. 2, the adhesive film 22 'may be formed only on the semiconductor wafer attaching portion 22a (see Fig. 1).

(materials)

The base material 4 serves as a matrix of the dicing die-bonding films 10 and 10 '. For example, polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymerized polypropylene, homopolypropylene, polybutene, polymethylpentene, (Meth) acrylic acid ester (random, alternating) copolymer, an ethylene-butene copolymer, an ethylene-hexene copolymer, a polyurethane, a polyethylene terephthalate , Polyesters such as polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, all aromatic polyamide, polyphenylsulfide, aramid (paper) Fiber, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, yarn Cone can be given a resin, metal (foil), paper or the like. When the pressure-sensitive adhesive layer (3) is of the ultraviolet curing type, the base material (4) is preferably permeable to ultraviolet rays.

As the material of the substrate 4, a polymer such as a crosslinked product of the resin may be mentioned. The above plastic film may be used in a non-stretched state, or may be subjected to a single-axis or biaxial stretching treatment if necessary. According to the resin sheet to which heat shrinkability is imparted by stretching treatment or the like, the bonding area between the pressure-sensitive adhesive layer 3 and the adhesive film 22 is reduced by thermally shrinking the base material 4 after dicing, .

The surface of the base material 4 may be chemically or physically treated such as an ordinary surface treatment such as chromic acid treatment, ozone exposure, flame exposure, high voltage exposure, ionizing radiation treatment, etc., in order to improve the adhesion with the adjacent layer, Treatment, and coating treatment with a primer (for example, an adhesive material to be described later).

As the base material (4), homogeneous or heterogeneous materials can be appropriately selected and used, and if necessary, plural kinds of materials blended together can be used. In order to impart antistatic performance to the substrate 4, a vapor deposition layer of a conductive material having a thickness of about 30 to 500 Å including a metal, an alloy, an oxide thereof, and the like may be formed on the substrate 1 . The substrate 4 may be a single layer or two or more layers.

The thickness of the base material 4 is not particularly limited and can be appropriately determined, but is generally about 5 to 200 mu m.

The base material 4 may contain various additives (for example, a coloring agent, a filler, a plasticizer, an anti-aging agent, an antioxidant, a surfactant, a flame retardant, etc.) within a range that does not impair the effects of the present invention .

(Pressure-sensitive adhesive layer)

The pressure-sensitive adhesive to be used for forming the pressure-sensitive adhesive layer (3) is not particularly limited as long as it can control the adhesive film (3) in a peelable manner. For example, a common pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber pressure-sensitive adhesive may be used. As the above pressure-sensitive adhesive, an acrylic pressure-sensitive adhesive using an acrylic polymer as a base polymer is preferable from the viewpoint of ultrapure water of an electronic part which is not susceptible to contamination such as semiconductor wafers or glass, clean cleaning property by an organic solvent such as alcohol and the like.

As the acrylic polymer, acrylic acid ester is used as a main monomer component. Examples of the acrylic acid esters include (meth) acrylic acid alkyl esters (e.g., methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t- And examples thereof include esters, isopentyl esters, hexyl esters, heptyl esters, octyl esters, 2-ethylhexyl esters, isooctyl esters, nonyl esters, decyl esters, isodecyl esters, undecyl esters, dodecyl esters, tridecyl esters, , Linear or branched alkyl esters having from 4 to 18 carbon atoms, such as hexadecyl ester, octadecyl ester and eicosyl ester) and (meth) acrylic acid cycloalkyl esters (for example, , Cyclopentyl ester, cyclohexyl ester, and the like) There may be mentioned acrylic polymer, etc. is used as the time. The (meth) acrylate ester refers to an acrylate ester and / or a methacrylate ester, and the (meth) acrylate of the present invention has the same meaning.

The acrylic polymer may contain units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or the cycloalkyl ester, if necessary, for the purpose of modifying the cohesive force, heat resistance and the like. Examples of such monomer components include carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid and crotonic acid; Acid anhydride monomers such as maleic anhydride and itaconic anhydride; Acrylate such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, Hydroxy group-containing monomers such as (meth) acrylic acid 10-hydroxydecyl, (meth) acrylic acid 12-hydroxylauryl and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Sulfonic acid groups such as styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, and (meth) acryloyloxynaphthalenesulfonic acid Containing monomer; Phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate; Acrylamide, acrylonitrile, and the like. These copolymerizable monomer components may be used alone or in combination of two or more. The amount of these copolymerizable monomers to be used is preferably 40% by weight or less based on the total monomer components.

Further, in order to crosslink the acrylic polymer, a polyfunctional monomer or the like may be included as a monomer component for copolymerization, if necessary. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (Meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, Polyester (meth) acrylate, and urethane (meth) acrylate. These polyfunctional monomers may be used alone or in combination of two or more. The amount of the multifunctional monomer to be used is preferably 30% by weight or less based on the total amount of the monomer components from the viewpoint of adhesion properties and the like.

The acrylic polymer is obtained by polymerizing a single monomer or a mixture of two or more monomers. The polymerization can be carried out by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. It is preferable that the content of the low molecular weight substance is small in view of prevention of contamination to a clean adherend. In view of this, the number-average molecular weight of the acrylic polymer is preferably 300,000 or more, and more preferably about 400,000 to 3,000,000.

In order to increase the number average molecular weight of the acrylic polymer or the like as the base polymer, an external crosslinking agent may be suitably employed in the pressure-sensitive adhesive. Specific examples of the external crosslinking method include a method in which a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine crosslinking agent is added and reacted. When an external crosslinking agent is used, the amount thereof to be used is appropriately determined according to the balance with the base polymer to be crosslinked, and further, depending on the intended use as a pressure-sensitive adhesive. Generally, it is preferable that the amount is about 10 parts by weight or less, more preferably 0.1 to 10 parts by weight, based on 100 parts by weight of the base polymer. In addition to the above components, additives known in the art such as various tackifiers and anti-aging agents may be used for the pressure-sensitive adhesive, if necessary.

The pressure-sensitive adhesive layer (3) can be formed by a radiation-curable pressure-sensitive adhesive. The radiation-curable pressure-sensitive adhesive can increase the degree of crosslinking by irradiation with radiation such as ultraviolet rays, and can easily lower the adhesive force. For example, by irradiating only the portion 3a of the pressure-sensitive adhesive layer 3 shown in Fig. 2 with a radiation, a difference in adhesive force with the portion 3b can be set.

Further, by hardening the radiation-curable pressure-sensitive adhesive layer 3 in accordance with the adhesive film 22 ', it is possible to easily form the portion 3a in which the adhesive force is remarkably decreased. The interface between the portion 3a and the adhesive film 22 'is easily peeled off at the time of pick-up because the adhesive film 22' is adhered to the portion 3a where the adhesive strength is lowered. On the other hand, the portion not irradiated with radiation has a sufficient adhesive force and forms the portion 3b.

As described above, in the pressure-sensitive adhesive layer 3 of the dicing die-bonding film 10 shown in Fig. 1, the portion 3b formed by the uncured radiation-curable pressure- So that the holding force at the time of dicing can be ensured. The radiation-curable pressure-sensitive adhesive can support the adhesive film 22 for fixing the semiconductor chip to an adherend such as a substrate with a good balance of adhesion and peeling. In the pressure-sensitive adhesive layer 3 of the dicing die-bonding film 10 'shown in Fig. 2, the portion 3b can fix the wafer ring.

The radiation-curable pressure-sensitive adhesive can be used without any particular limitation as long as it has a radiation-curable functional group such as a carbon-carbon double bond and exhibits adhesiveness. As the radiation-curing pressure-sensitive adhesive, there can be mentioned, for example, a radiation curable pressure-sensitive adhesive of addition type in which a radiation-curable monomer component or an oligomer component is blended with a common pressure-sensitive adhesive such as the acrylic pressure-

(Meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, Acrylate, dipentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di . Examples of the radiation-curable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based and polybutadiene-based oligomers, and a weight average molecular weight of about 100 to 30000 is suitable . The amount of radiation-curable monomer component or oligomer component can appropriately determine the amount by which the adhesive force of the pressure-sensitive adhesive layer can be lowered depending on the kind of the pressure-sensitive adhesive layer. Generally, it is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight, based on 100 parts by weight of the base polymer such as acrylic polymer constituting the pressure-sensitive adhesive.

As the radiation curing type pressure-sensitive adhesive, the radiation curable pressure-sensitive adhesive of the internal type which uses, as the base polymer, a compound having a carbon-carbon double bond at the polymer side chain, main chain or main chain terminal in addition to the addition type radiation curable pressure- Since the built-in radiation-curing pressure-sensitive adhesive does not need to contain the oligomer component or the like which is a low-molecular component or the like, the oligomer component does not move in the pressure-sensitive adhesive over time and forms a pressure- It is preferable.

The above-mentioned base polymer having a carbon-carbon double bond may have a carbon-carbon double bond and have a sticking property without particular limitation. As such a base polymer, an acrylic polymer is preferably used as a basic skeleton. As the basic skeleton of the acrylic polymer, there may be mentioned the acrylic polymer exemplified above.

The method for introducing the carbon-carbon double bond to the acrylic polymer is not particularly limited, and various methods can be employed, but molecular design is easy to introduce the carbon-carbon double bond into the side chain of the polymer. For example, after a monomer having a functional group is copolymerized with an acrylic polymer in advance, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is condensed Or an addition reaction is carried out.

Examples of combinations of these functional groups include a carboxylic acid group and an epoxy group, a carboxylic acid group and an aziridyl group, and a hydroxyl group and an isocyanate group. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is suitable because of the ease of reaction tracking. The functional group may be present either on the acrylic polymer or on either side of the compound, provided that the acrylic polymer having the carbon-carbon double bond is formed by the combination of these functional groups. The compound having an actual group and having an isocyanate group is suitable. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl- ?,? -Dimethylbenzyl isocyanate and the like have. As the acrylic polymer, a copolymer obtained by copolymerizing the hydroxyl group-containing monomer, the ether compound of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, or diethylene glycol monovinyl ether is used.

The radiation-curable pressure-sensitive adhesive of the present invention can be used alone as the base polymer (particularly acrylic polymer) having the carbon-carbon double bond, but it is also possible to mix the radiation curable monomer component or oligomer component have. The radiation-curable oligomer component and the like are usually in the range of 30 parts by weight, preferably 0 to 10 parts by weight, based on 100 parts by weight of the base polymer.

When the radiation-curable pressure-sensitive adhesive is cured by ultraviolet rays or the like, it is preferable to include a photopolymerization initiator. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone,? -Hydroxy- ?,? '- dimethylacetophenone, ? -Ketol compounds such as hydroxypropiophenone, 1-hydroxycyclohexyl phenyl ketone and the like; Methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -1; Benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether; Ketal compounds such as benzyl dimethyl ketal; Aromatic sulfonyl chloride-based compounds such as 2-naphthalenesulfonyl chloride; Optically active oxime compounds such as 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime; Benzophenone compounds such as benzophenone, benzoylbenzoic acid and 3,3'-dimethyl-4-methoxybenzophenone; Thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4- Thioxanthone-based compounds such as thionone, 2,4-diisopropylthioxanthone and the like; Camphorquinone; Halogenated ketones; Acylphosphine oxide; Acylphosphonates, and the like. The blending amount of the photopolymerization initiator is, for example, about 0.05 to 20 parts by weight relative to 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

When the pressure-sensitive adhesive layer 3 is formed by a radiation-curable pressure-sensitive adhesive, it is preferable that a part of the pressure-sensitive adhesive layer 3 is irradiated with radiation so that the adhesive force of the portion 3a becomes the adhesive force of the portion 3b. In the dicing die-bonding film of Fig. 2, for example, the adhesive force of the portion 3a < the portion 3b of the SUS304 plate (# 2000 polishing) as the adherend is made cohesive.

As a method of forming the portion 3a on the pressure-sensitive adhesive layer 3, a radiation-curable pressure-sensitive adhesive layer 3 is formed on the base material 4, and the portion 3a is partially irradiated with radiation to be cured Method. The partial irradiation of radiation may be performed through a photomask having a pattern corresponding to the portion 3b or the like other than the portion 3a of the pressure-sensitive adhesive layer 3 corresponding to the semiconductor wafer attaching portion 22a. In addition, a method of curing by irradiating ultraviolet rays spotwise may be mentioned. The radiation curable pressure sensitive adhesive layer 3 can be formed by transferring the pressure sensitive adhesive layer 3 provided on the separator onto the base material 4. [ The partial radiation curing may be performed on the radiation curable pressure sensitive adhesive layer 3 provided on the separator.

When the pressure sensitive adhesive layer 3 is formed by a radiation curable pressure sensitive adhesive, all or a part of at least one surface of the base material 4 other than the portion 3a corresponding to the semiconductor wafer attaching portion 22a is shielded The radiation-curable pressure-sensitive adhesive layer 3 is formed thereon and then irradiated with radiation to cure the portion 3a corresponding to the semiconductor wafer attaching portion 22a, Can be formed. As the light-shielding material, what can be a photomask on a support film can be produced by printing, vapor deposition or the like. According to such a manufacturing method, it is possible to efficiently manufacture the dicing die-bonding film 10 of the present invention.

In addition, when curing inhibition by oxygen occurs at the time of irradiation with radiation, it is preferable to block oxygen (air) from the surface of the radiation-curable pressure-sensitive adhesive layer 3 by any method. For example, a method of covering the surface of the pressure-sensitive adhesive layer 3 with a separator or a method of irradiating radiation such as ultraviolet rays in a nitrogen gas atmosphere can be given.

The thickness of the pressure-sensitive adhesive layer (3) is not particularly limited, but is preferably about 1 to 50 mu m from the viewpoints of the prevention of cut-off on the chip cut surface and the compatibility of fixing and maintenance of the adhesive layer. Preferably 2 to 30 占 퐉, further preferably 5 to 25 占 퐉.

The pressure-sensitive adhesive layer 3 may contain various additives (for example, colorants, thickeners, extenders, fillers, tackifiers, plasticizers, antioxidants, antioxidants, surfactants , Cross-linking agent, etc.) may be included.

(Method for producing adhesive film)

The adhesive film according to the present embodiment is manufactured, for example, as follows. First, an adhesive composition for forming an adhesive film is prepared. The production method is not particularly limited, and for example, a thermosetting resin, a thermoplastic resin and other additives described in the section of the adhesive film are put into a container, dissolved in an organic solvent, and stirred to be homogeneous to obtain an adhesive composition solution have.

The organic solvent is not limited as long as it can uniformly dissolve, knead or disperse the components constituting the adhesive film, and conventionally known solvents can be used. Examples of such a solvent include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone and cyclohexanone, toluene and xylene. It is preferable to use methyl ethyl ketone, cyclohexanone or the like in view of high drying speed and low cost availability.

The adhesive composition solution thus prepared is coated on the separator to a predetermined thickness to form a coating film, and then the coating film is dried under predetermined conditions. As the separator, a plastic film or paper surface-coated with a releasing agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine-based releasing agent, or a long-chain alkyl acrylate-based releasing agent can be used. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, gravure coating, and the like. The drying conditions include, for example, a drying temperature of 70 to 160 DEG C and a drying time of 1 to 5 minutes. Thus, the adhesive film according to the present embodiment is obtained.

(Production method of dicing die-bonding film)

The dicing die-bonding films 10 and 10 'can be produced, for example, by separately preparing a dicing film and an adhesive film, and finally joining them. Concretely, it can be produced in accordance with the following procedure.

First, the base material 4 can be formed by a conventionally known film-forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T die extrusion method, a co-extrusion method, a dry lamination method, and the like.

Then, a pressure-sensitive adhesive composition for forming a pressure-sensitive adhesive layer is prepared. As the pressure-sensitive adhesive composition, resins and additives as described in the section of the pressure-sensitive adhesive layer are mixed. The pressure sensitive adhesive composition thus prepared is applied onto the substrate 4 to form a coating film, and then the coating film is dried under predetermined conditions (heating crosslinking as required) to form a pressure sensitive adhesive layer 3. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, gravure coating, and the like. The drying conditions are, for example, a drying temperature of 80 to 150 ° C and a drying time of 0.5 to 5 minutes. Further, the pressure-sensitive adhesive composition may be coated on the separator to form a coating film, and then the coating film may be dried under the above drying conditions to form the pressure-sensitive adhesive layer (3). Thereafter, the pressure-sensitive adhesive layer 3 is bonded to the substrate 4 together with the separator. Thus, a dicing film comprising the base material 4 and the pressure-sensitive adhesive layer 3 is produced.

Subsequently, the separator is peeled off from the dicing film, and the adhesive film and the pressure-sensitive adhesive layer are bonded to each other so as to bond them together. The bonding can be performed by, for example, compression bonding. At this time, the temperature of the laminate is not particularly limited, and is preferably 30 to 50 占 폚, for example, and more preferably 35 to 45 占 폚. The line pressure is not particularly limited, but is preferably 0.1 to 20 kgf / cm, more preferably 1 to 10 kgf / cm, for example. Then, the separator on the adhesive film is peeled off to obtain the dicing die-bonding film according to the present embodiment.

<Method of Manufacturing Semiconductor Device>

In the method of manufacturing a semiconductor device according to the present embodiment, an adherend on which at least one first semiconductor element is mounted (fixed) through a first fixing step and a first wire bonding step is prepared in advance (adherend preparation step) , The first semiconductor element is fixed to the adherend by an adhesive film having passed through dicing and pick-up, while the first semiconductor element is embedded and a second semiconductor element different from the first semiconductor element is fixed. 3A to 3H are cross-sectional views schematically showing one process of a manufacturing method of a semiconductor device according to an embodiment of the present invention.

(First fixing step)

As shown in Fig. 3A, at least one first semiconductor element 11 is fixed on the adhered object 1 in the first fixing step. The first semiconductor element 11 is fixed to the adhered object 1 with the first adhesive film 21 interposed therebetween. 3A, only one first semiconductor element 11 is shown, but a plurality of first, second, third, fourth, or five or more first semiconductor elements 11 may be attached to an adherend (1).

(First semiconductor element)

The first semiconductor element 11 is not particularly limited as long as it is smaller in size as viewed from the plane than the semiconductor element (second semiconductor element 12; see FIG. 3F) stacked on the second stage. For example, A controller, a memory chip, or a logic chip, which is a kind of a memory chip, can be appropriately used. In general, a plurality of wires are connected in that the controller controls the operation of each stacked semiconductor element. The communication speed of the semiconductor package is affected by the wire length. In this embodiment, since the first semiconductor element 11 is fixed to the adhered object 1 and located at the lowermost end, the wire length can be shortened, The decrease in the communication speed of the semiconductor package (semiconductor device) can be suppressed even if the number of stacked elements is increased.

Although the thickness of the first semiconductor element 11 is not particularly limited, it is often 100 탆 or less. In addition, with the recent thinning of the semiconductor package, the first semiconductor element 11 having a thickness of 75 mu m or less, more preferably 50 mu m or less is also used.

(Adherend)

Examples of the adherend 1 include a substrate, a lead frame, and other semiconductor elements. As the substrate, a conventionally known substrate such as a printed wiring board can be used. As the lead frame, an organic substrate including a metal lead frame such as a Cu lead frame and a 42 Alloy lead frame, a glass epoxy, BT (bismaleimide-triazine), polyimide and the like can be used. However, the present embodiment is not limited to this, and includes a circuit board on which a semiconductor element is mounted and which can be used by being electrically connected to a semiconductor element.

(First adhesive film)

As the first adhesive film 21, the above-mentioned forming adhesive film may be used, or a conventionally known adhesive film for fixing a semiconductor device may be used. However, in the case of using the adhesive film for a pucker, since the first adhesive film 21 does not need to embed the semiconductor element, the thickness thereof may be reduced to about 5 to 60 mu m.

(Fixing method)

The first semiconductor element 11 is die-bonded to the adherend 1 via the first adhesive film 21 as shown in Fig. 3A. As a method for fixing the first semiconductor element 11 on the adhered object 1, for example, a method may be used in which after the first adhesive film 21 is laminated on the adhered object 1, And the first semiconductor element 11 is laminated so that the bond surface is on the upper side. Alternatively, the first semiconductor element 11 to which the first adhesive film 21 is attached may be disposed on the adherend 1 and laminated.

Since the first adhesive film 21 is semi-cured, after the first adhesive film 21 is mounted on the adherend 1, the first adhesive film 21 is thermally cured by performing a heat treatment under a predetermined condition The first semiconductor element 11 is fixed on the adherend 1. The temperature for the heat treatment is preferably 100 to 200 占 폚, more preferably 120 to 180 占 폚. The heat treatment time is preferably 0.25 to 10 hours, more preferably 0.5 to 8 hours.

(First wire bonding process)

The first wire bonding step is a step of electrically connecting the tip of a terminal portion (for example, an inner lead) of the adhered object 1 and an electrode pad (not shown) on the first semiconductor element 11 with a bonding wire 31 (See FIG. 3B). As the bonding wire 31, for example, a gold wire, an aluminum wire, a copper wire, or the like is used. The temperature at which wire bonding is carried out is performed within a range of 80 to 250 占 폚, preferably 80 to 220 占 폚. Further, the heating time is from several seconds to several minutes. The connection is carried out by the combination of the vibration energy by the ultrasonic wave and the pressing energy by the applied pressure while being heated to be within the above-mentioned temperature range.

(Wafer bonding step)

Separately, as shown in Fig. 3C, the semiconductor wafer 2 is pressed on the bonding adhesive film 22 for forming the dicing die-bonding film 10, and the bonding is held and fixed (bonding step). This step is carried out while being pressed by a pressing means such as a pressing roll.

(Dicing step)

Then, as shown in Fig. 3D, the semiconductor wafer 2 is diced. As a result, the semiconductor wafer 2 is cut into a predetermined size and individualized to manufacture the semiconductor chip 12 (dicing step). The dicing is performed, for example, in accordance with a conventional method on the circuit surface side of the semiconductor wafer 2. [ In the present step, for example, a cutting method called a full cut for cutting up to the dicing film 5 can be adopted. The dicing apparatus used in the present step is not particularly limited and conventionally known dicing apparatuses can be used. Further, since the semiconductor wafer is bonded and fixed by the dicing die-bonding film 10, it is possible to suppress chip breakage and chip scattering, as well as to prevent breakage of the semiconductor wafer 2. Further, since the mortar adhesive film 22 is used, re-adhesion after dicing can be prevented, and the following pickup process can be performed satisfactorily.

(Pickup process)

The semiconductor chip 12 is picked up together with the bonding adhesive film 22 for peeling the semiconductor chip 12 bonded and fixed to the dicing die-bonding film 10 as shown in Fig. 3E Pickup process). The pick-up method is not particularly limited, and various conventionally known methods can be employed. For example, there is a method in which individual semiconductor chips 12 are pushed up by the needles from the base material 4 side, and the semiconductor chip 12 which is pushed up is picked up by the pick-up device.

Here, the pickup is performed after the pressure sensitive adhesive layer 3 is irradiated with ultraviolet rays when the pressure sensitive adhesive layer 3 is of the ultraviolet curing type. As a result, the adhesive force of the pressure-sensitive adhesive layer 3 to the adhesive film 22 is lowered, and the semiconductor chip 12 is easily peeled off. As a result, the pickup can be performed without damaging the semiconductor chip. The conditions such as the irradiation intensity at the time of ultraviolet irradiation, the irradiation time and the like are not particularly limited and may be appropriately set according to necessity. As a light source used for ultraviolet irradiation, a high-pressure mercury lamp, a microwave-excited lamp, a chemical lamp, or the like can be used.

(Second fixing step)

In the second fixing step, while the first semiconductor element 11 fixed on the adherend 1 is embedded through the bonding adhesive film 22 picked up together with the second semiconductor element 12, A second semiconductor element 12 different from the one semiconductor element 11 is fixed to the adhered object 1 (see FIG. 3F). The bonding adhesive film 22 has a thickness T that is thicker than the thickness T ₁ of the first semiconductor element 11. In the present embodiment, the difference between the thickness T and the thickness T ₁ is 40 탆, in that the electrical connection between the adherend 1 and the first semiconductor element 11 is achieved by wire bonding connection. Or more and 260 占 퐉 or less. The lower limit of the difference between the thickness T and the thickness T ₁ is preferably 40 μm or more, more preferably 50 μm or more, and still more preferably 60 μm or more. The upper limit of the difference between the thickness T and the thickness T ₁ is preferably 260 탆 or less, more preferably 200 탆 or less, and further preferably 150 탆 or less. This makes it possible to prevent the contact between the first semiconductor element 11 and the second semiconductor element 12 while preventing the entire semiconductor device from being thinned, So that the first semiconductor element 11 as the controller can be fixed on the adhered object 1 (that is, fixed at the lowermost end where the wire length is the shortest).

The thickness T of the embedding adhesive film 22 may be suitably set in consideration of the thickness T ₁ of the first semiconductor element 11 and the amount of wire projection so that the first semiconductor element 11 can be embedded, The lower limit thereof is preferably 80 占 퐉 or more, more preferably 100 占 퐉 or more, and even more preferably 120 占 퐉 or more. On the other hand, the upper limit of the thickness T is preferably 300 탆 or less, more preferably 200 탆 or less, and even more preferably 150 탆 or less. By thus making the adhesive film relatively thick, Therefore, it is easy to embed the first semiconductor element 11 in the adhesive film 22 for forming a pouch.

(Second semiconductor element)

The second semiconductor element 12 is not particularly limited, and for example, a memory chip which is under the operation control of the first semiconductor element 11 as a controller can be used.

(Fixing method)

As a method for fixing the second semiconductor element 12 on the adherend 1, for example, after the adhesive film 22 for forming a pucker is laminated on the adherend 1 in the same manner as the first fixing step, And the second semiconductor element 12 is laminated on the adhesive film 22 so that the wire bond surface is on the upper side. Alternatively, the second semiconductor element 12 to which the pre-bonding adhesive film 22 is attached may be disposed on the adherend 1 and laminated.

In order to facilitate entry and embedding of the first semiconductor element 11 into the adhesive film 22 for embossing, it is preferable to perform heat treatment on the embossing adhesive film 22 at the time of die bonding. The heating temperature is not particularly limited as long as it is a temperature which softens the puckering adhesive film 22 and does not completely cure. The heating temperature is preferably not lower than 80 캜 and not higher than 150 캜, more preferably not lower than 100 캜 but not higher than 130 캜. At this time, it may be pressurized at 0.1 MPa or more and 1.0 MPa or less.

The melt viscosity of the embossing adhesive film 22 at a shear rate of 50 s ^-1 at 120 캜 is set to a predetermined range and therefore the melt viscosity of the embossing adhesive film 22 for the surface adherend 1 The adhesiveness between the pneumatic adhesive film 22 and the adherend 1 can be improved. When the second semiconductor element 12 is fixed to the adherend 1 by the adhesive film 22 for forming a pucker, the adhesive film for puckering (hereinafter referred to as &quot; 22 can be reduced.

Since the forming adhesive film 22 is semi-cured, the forming adhesive film 22 is placed on the adherend 1 and then subjected to a heat treatment under a predetermined condition to thermally cure the fixing adhesive film 22 The second semiconductor element 12 is fixed on the adhered object 1. The temperature for the heat treatment is preferably 100 to 200 占 폚, more preferably 120 to 180 占 폚. The heat treatment time is preferably 0.25 to 10 hours, more preferably 0.5 to 8 hours.

At this time, the shear adhesive force of the enveloping adhesive film 22 after thermosetting to the adherend 1 is preferably 0.1 MPa or more, more preferably 0.2 to 10 MPa at 25 to 250 캜. When the shear adhesive strength of the embedding adhesive film 22 is 0.1 MPa or more, ultrasonic vibration or heating in the wire bonding process for the second semiconductor element 12 causes the adhesive film 22 for embedding and the second semiconductor element It is possible to suppress the occurrence of shear deformation in the adhesion surface with the adherend 12 or the adherend 1. That is, it is possible to suppress the movement of the second semiconductor element 12 by the ultrasonic vibration at the time of wire bonding, thereby preventing the success rate of the wire bonding from being lowered.

(Third fixing step)

In the third fixing step, the same or different third semiconductor element 13 as the second semiconductor element is fixed on the second semiconductor element 12 (see FIG. 3G). The third semiconductor element 13 is fixed to the second semiconductor element 12 via the third adhesive film 23. [

(Third semiconductor element)

The third semiconductor element 13 may be a memory chip of the same kind as the second semiconductor element 12 or a memory chip different from the second semiconductor element 12. [ The thickness of the third semiconductor element 13 can also be suitably set in accordance with the specifications of the intended semiconductor device.

(Third adhesive film)

As the third adhesive film 23, the same material as that of the first adhesive film 21 in the first fixing step can be suitably used. In the case where the adhesive film 22 for forming a pouch is used as the third adhesive film 23, since it is unnecessary to form another semiconductor element, the thickness of the adhesive film 22 may be reduced to about 5 to 60 mu m.

(Fixing method)

The third semiconductor element 13 is die-bonded to the second semiconductor element 12 via the third adhesive film 23, as shown in Fig. 3G. As a method of fixing the third semiconductor element 13 on the second semiconductor element 12, for example, after a third adhesive film 23 is laminated on the second semiconductor element 12, 23, the third semiconductor element 13 is laminated with the wire bond surface on the upper side. Further, the third semiconductor element 13 to which the third adhesive film 23 is attached may be disposed on the second semiconductor element 12 and laminated. However, in order to wire-bond between the second semiconductor element 12 and the third semiconductor element 13 to be described later, the electrode pad of the wire bonding surface (upper surface) The element 13 may be fixed to be displaced with respect to the second semiconductor element 12 in some cases. In this case, if the third adhesive film 23 is first attached to the upper surface of the second semiconductor element 12, the portion of the third adhesive film 23 that is projected from the upper surface of the second semiconductor element 12 The overhanging portion) is bent and adheres to the side surface of the second semiconductor element 12 or the side surface of the adhesive film 22 for forming, which may cause unexpected problems. Therefore, in the third fixing step, it is preferable that the third adhesive film 23 is attached to the third semiconductor element 13 in advance, and the third adhesive film 23 is placed on the second semiconductor element 12 and laminated.

Since the third adhesive film 23 is also semi-cured, after the third adhesive film 23 is mounted on the second semiconductor element 12, the third adhesive film 23 is heat- And the third semiconductor element 13 is fixed on the second semiconductor element 12 by curing. In addition, the third semiconductor element 13 may be fixed without heat treatment in consideration of the elasticity of the third adhesive film 23 and the process efficiency. The temperature for the heat treatment is preferably 100 to 200 占 폚, more preferably 120 to 180 占 폚. The heat treatment time is preferably 0.25 to 10 hours, more preferably 0.5 to 8 hours.

(Second wire bonding process)

The second wire bonding step is a step of electrically connecting an electrode pad (not shown) on the second semiconductor element 12 and an electrode pad (not shown) on the third semiconductor element 13 with a bonding wire 32 (See Fig. 3H). The same material as that of the first wire bonding process can be employed as the material of the wire or the wire bonding conditions.

(Semiconductor device)

By the above process, the semiconductor device 100 in which three semiconductor elements are stacked in a multi-layered manner with a predetermined adhesive film interposed therebetween can be manufactured. Further, by repeating the same procedures as the third fixing step and the second wire bonding step, a semiconductor device in which four or more semiconductor elements are stacked can be manufactured.

(Sealing step)

A sealing step of resin-sealing the entire semiconductor device 100 may be performed after stacking a desired number of semiconductor elements. The sealing step is a step of sealing the semiconductor device 100 with a sealing resin (not shown). This step is performed to protect the semiconductor element and the bonding wire mounted on the adherend 1. [ This step is carried out, for example, by molding a sealing resin into a metal mold. As the sealing resin, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is usually 60 to 90 seconds at 175 DEG C, but the present embodiment is not limited to this and can be cured at 165 to 185 DEG C for several minutes, for example. In this step, it is also possible to pressurize during resin sealing. In this case, the pressure to be pressurized is preferably 1 to 15 MPa, more preferably 3 to 10 MPa.

(Post-curing process)

In the present embodiment, a post-curing step of post-curing the sealing resin may be performed after the sealing step. In this step, the sealing resin lacking curing is completely cured in the sealing step. The heating temperature in this step differs depending on the type of the sealing resin, for example, in the range of 165 to 185 占 폚, and the heating time is about 0.5 to 8 hours. The semiconductor package can be manufactured by passing through a sealing process or a post-curing process.

&Lt; Embodiment 1-2 >

In Embodiment 1-1, the first semiconductor element is fixed to an adherend by an adhesive film, and electrical connection between the first and second semiconductor elements is achieved by wire bonding. In Embodiments 1-2, The flip chip connection using the protruding electrodes is used to fix and electrically connect the two. Therefore, Embodiment 1-2 differs from Embodiment 1-1 only in the fixing form in the first fixing step, and therefore the difference will mainly be described below.

(First fixing step)

In this embodiment, in the first fixing step, the first semiconductor element 41 is fixed to the adherend 1 by flip chip bonding (see Fig. 4A). In the flip chip connection, the circuit surface of the first semiconductor element 41 is facedown so that it faces the adhered body 1. A plurality of protruding electrodes 43 such as bumps are provided on the first semiconductor element 41 and the protruding electrodes 43 are connected to electrodes (not shown) on the adhered object 1. The underfill material 44 is filled between the adherend 1 and the first semiconductor element 41 for the purpose of alleviating the difference in coefficient of thermal expansion between them and protecting the space therebetween.

The connection method is not particularly limited, and can be connected by a conventionally known flip chip bonder. For example, the protruding electrode 43 such as a bump formed on the first semiconductor element 41 is brought into contact with a conductive material (solder or the like) for bonding bonded to the connection pad of the adhered object 1, The first semiconductor element 41 can be fixed to the adherend 1 (flip chip bonding) by ensuring electrical conduction between the first semiconductor element 41 and the adhered body 1 by melting the ashes. Generally, the heating conditions at the flip chip connection are 240 to 300 占 폚, and the pressing conditions are 0.5 to 490 N.

The material for forming the bump as the protruding electrode 43 is not particularly limited and may be, for example, a tin-lead metal material, a tin-silver metal material, a tin-silver- (Alloys) such as a zinc-bismuth metal material, a gold-based metal material, and a copper-based metal material.

As the underfill material 44, conventionally known underfill materials in liquid or film form can be used.

(Second fixing step)

In the second fixing step, a second semiconductor element (41) is formed by embedding the first semiconductor element (41) with the forming adhesive film (22) 12 are fixed to the adherend 1 (see Fig. 4B). The conditions in this step are the same as those in the second fixing step in Embodiment 1-1. In this embodiment also, since the film forming adhesive film 22 having a specific melt viscosity is used, it is possible to prevent adherence of the adherend of the film forming adhesive film 22 1) is increased and the occurrence of voids can be prevented.

The adhesive film 22 for a square has a thickness T that is thicker than the thickness T ₁ of the first semiconductor element 41. In the present embodiment, the difference between the thickness T and the thickness T ₁ is preferably 10 μm or more and 200 μm or less, in that the adherend 1 and the first semiconductor element 41 are flip-chip bonded Do. The lower limit of the difference between the thickness T and the thickness T ₁ is preferably 10 μm or more, more preferably 20 μm or more, and still more preferably 30 μm or more. The upper limit of the difference between the thickness T and the thickness T ₁ is preferably 200 μm or less, more preferably 150 μm or less, and further preferably 100 μm or less. With this configuration, the entire semiconductor device can be made thinner, and the entire first semiconductor element 41 can be prevented from contacting the first semiconductor element 41 and the second semiconductor element 12, 22) so that the first semiconductor element 41 as a controller can be fixed on the adhered object 1 (that is, fixed at the lowermost end where the communication path length is shortest).

The thickness T of the embedding adhesive film 22 may be suitably set in consideration of the thickness T ₁ of the first semiconductor element 41 and the height of the protruding electrode so that the first semiconductor element 41 can be embedded therein , The lower limit thereof is preferably 50 占 퐉 or more, more preferably 60 占 퐉 or more, and further preferably 70 占 퐉 or more. On the other hand, the upper limit of the thickness T is preferably 250 占 퐉 or less, more preferably 200 占 퐉 or less, and even more preferably 150 占 퐉 or less. The thickness of the embedding adhesive film 22 is relatively large, so that it is possible to substantially cover the thickness of a general controller, and the embedding of the first semiconductor element 41 in the embedding adhesive film 22 can be easily performed.

Subsequently, in the same manner as in Embodiment 1-1, a third fixing step (see Fig. 4C) for fixing the third semiconductor element 13 of the same or different type to the second semiconductor element 12 on the second semiconductor element 12, And the second wire bonding process (see FIG. 4D) for electrically connecting the second semiconductor element 12 and the third semiconductor element 13 by the bonding wire 32, the controller is stacked at the lowermost position And a semiconductor device 200 in which a plurality of semiconductor elements are stacked over the semiconductor device 200 can be manufactured.

(Other Embodiments)

In Embodiment 1-1, the second semiconductor element 12 is manufactured through a dicing process using a dicing die-bonding film and a pickup process. The first semiconductor element 11 may also be manufactured by using a dicing die-bonding film. In this case, a semiconductor wafer for cutting out the first semiconductor element 11 is prepared separately, and thereafter the first semiconductor element 11 is bonded to the adherend 1 via a wafer bonding step, a dicing step, ). The third semiconductor element 13 and the semiconductor element stacked on the third semiconductor element 13 can be formed in the same manner.

When a semiconductor device is mounted on an adherend in a three-dimensional manner, a buffer coating film may be formed on the surface of the semiconductor device on which circuits are formed. Examples of the buffer coating film include a heat-resistant resin such as a silicon nitride film or a polyimide resin.

In each of the embodiments, the wire bonding process is performed every time the semiconductor elements after the second semiconductor element are laminated. However, it is also possible to carry out the wire bonding process collectively after stacking a plurality of semiconductor elements. Further, since the first semiconductor element is embedded by the adhesive film for forming a pucker, it can not be an object of collective wire bonding.

The form of the flip chip connection is not limited to the connection by the bump as the protruding electrode described in Embodiment 1-2, but also the connection by the conductive adhesive composition, the connection by the projection structure in which the bump and the conductive adhesive composition are combined . In the present invention, as long as the circuit surface of the first semiconductor element is face-down mounted so as to be opposed to the adherend, the flip chip connection will be referred to as flip chip connection irrespective of the connection mode of the protruding electrode or the protruding structure. As the conductive adhesive composition, conventionally known conductive pastes prepared by mixing a conductive filler such as gold, silver, and copper with a thermosetting resin such as an epoxy resin can be used. When the conductive adhesive composition is used, the first semiconductor element can be fixed by placing the first semiconductor element on an adherend and thermally curing it at 80 to 150 DEG C for about 0.5 to 10 hours.

&Quot; Second Embodiment &

A second embodiment of the present invention is a semiconductor device comprising a first fixing step of fixing a first semiconductor element to an adherend, an element preparing step of preparing an adhesive film for forming a second semiconductor element and a second semiconductor element, A second fixing step of fixing the second semiconductor element to an adherend while embedding the first semiconductor element fixed to the adherend by the adhering adhesive film; and a second fixing step of fixing the second adhesive layer to the heat- And a method of manufacturing a semiconductor device including a curing process.

Hereinafter, the second embodiment will be described focusing on the differences from the first embodiment. The porous adhesive sheet or the like of this embodiment can exhibit the same general characteristics as those of the adhesive sheet or the like of the first embodiment as characteristics other than those described in the section of this embodiment.

&Lt; Embodiment 2-1 >

Before describing the method of manufacturing the semiconductor device of the present embodiment, the dicing die-bonding film 10 used in the present embodiment will be described.

&Lt; Dicing die-bonding film (10) >

As shown in Fig. 1, the dicing die-bonding film 10 has a dicing film 5 and an adhesive film 22 for a pouch disposed on the dicing film 5. The dicing film 5 has a base material 4 and a pressure-sensitive adhesive layer 3 disposed on the base material 4. [ The pneumatic adhesive film 22 is disposed on the pressure sensitive adhesive layer 3.

In Embodiment 2-1, instead of the dicing die-bonding film 10, only a portion 22a (see FIG. 1) in which a work (a semiconductor wafer 2 or the like) It is possible to use a dicing die-bonding film 10 'having a matting adhesive film 22'. The mortar adhesive film 22 'is the same as the mortar adhesive film 22. Therefore, in the following, mainly the dicing die-bonding film 10 will be described, and the description of the dicing die-bonding film 10 'will be basically omitted.

The constitution, components, composition and blending amount of the dicing film, the puckering adhesive film, and the dicing die-bonding film of the present embodiment and the method for producing them can be suitably employed in the first embodiment . Hereinafter, specific matters of the present embodiment will be described.

&Lt; Mortar adhesive film (22) >

The melt viscosity of the mortise adhesive film 22 at 120 캜 is not particularly limited as long as it has the ability to form the first semiconductor element, but the lower limit thereof is preferably 100 Pa · s or more, more preferably 200 Pa · s or more , More preferably 500 Pa · s or more. If it is 100 Pa · s or more, the voids of the pneumatic adhesive film 22 can be reduced. On the other hand, the upper limit of the melt viscosity at 120 캜 is preferably 3,000 Pa · s or less, more preferably 1,500 Pa · s or less, and still more preferably 1,000 Pa · s or less. If it is 3000 Pa · s or less, it is possible to improve the followability of the embossing adhesive film 22 with respect to the surface structure of the adherend, and the adhesion between the embedding adhesive film 22 and the adherend can be improved. As a result, generation of voids can be reduced, and a highly reliable semiconductor device can be manufactured.

The melt viscosity at 120 占 폚 can be measured by the method described in the examples.

In the mortar adhesive film 22, the melt viscosity at 150 DEG C at a shear rate of 5s &lt; ^-1 &gt; is preferably 50 Pas or more, more preferably 100 Pas or more, further preferably 200 Pas or more. By setting the lower limit of the melt viscosity within this range, it is possible to prevent the deformation of the adhesive film for forming mats 22 at the time of thermal curing by pressure heating after stacking the second semiconductor elements, Can be prevented. The upper limit of the melt viscosity is preferably 2000 Pa · s or less, more preferably 1000 Pa · s or less. By employing the upper limit as described above, it is possible to impart appropriate fluidity to the adhesive film 22 for embossing, so that voids can be reduced or eliminated by pressing when thermosetting.

The melt viscosity at a shear rate of 5s &lt; ^-1 &gt; at 150 DEG C can be measured by the method described in the Examples.

<Method of Manufacturing Semiconductor Device>

The manufacturing method of the semiconductor device according to the present embodiment and the like can appropriately adopt the one described in the first embodiment. Hereinafter, specific matters of the present embodiment will be described.

In Embodiment 2-1, as shown in Fig. 3B, the first semiconductor element 11 and the adherend 1 are electrically connected by a bonding wire 31. In Fig. After the connection, as shown in Fig. 3F, the second semiconductor element 12 is fixed to the adhered object 1 while the first semiconductor element 11 is embedded by the adhesive film 22 for forming. Subsequently, the second semiconductor element 12 is adhered to the adherend 1 while reducing voids by thermally curing the second adhesive film 22 in a pressurized atmosphere.

(Thermosetting process)

The adhesive film 22 for forming a film is semi-cured and thus the second semiconductor element 12 is fixed to the adherend 1 and then the adhesive film 22 for forming a film is thermally cured in a pressurized atmosphere to form the second semiconductor element 12 ) Is adhered to the adherend (1). For example, a pressurizing oven having a chamber may be prepared, and the forming adhesive film 22 may be heated to increase the pressure in the chamber, thereby thermally curing the forming adhesive film 22. The pressure in the chamber can be increased by charging the inert gas into the chamber. As the pressure oven, conventionally known ones can be used.

The pressing pressure of the oven, preferably from ^{1kg / cm 2 (9.8 × 10} -2 MPa) or more, more preferably 3kg / cm ² to (2.9 × 10 ^-1 MPa), more preferably at 4kg / cm ² ( 3.9 x 10 &lt; ^-1 &gt; MPa). If it is 1 kg / cm &lt; ² &gt; or more, the voids present between the puckering adhesive film 22 and the first semiconductor element 11 or the like can be effectively reduced. The pressure of the pressure oven is preferably 20 kg / cm ² (1.96 MPa) or less, more preferably 15 kg / cm ² (1.47 MPa) or less, and further preferably 10 kg / cm ² (0.98 MPa) or less. When it is 20 kg / cm ² or less, the time required for pressurization in the pressurizing oven can be shortened.

The temperature at the time of heating in a pressurized oven is not particularly limited, but is preferably 100 占 폚 or higher, more preferably 120 占 폚 or higher, still more preferably 130 占 폚 or higher, particularly preferably 140 占 폚 or higher. The temperature at the time of heating in a pressurized oven is preferably 200 占 폚 or lower, more preferably 180 占 폚 or lower, more preferably 170 占 폚 or lower, still more preferably 160 占 폚 or lower.

The heating time when heating in a pressurized oven is not particularly limited, but is preferably 0.1 hour or more, more preferably 0.25 hours or more, further preferably 0.5 hour or more. The heating time is preferably 10 hours or less, more preferably 8 hours or less, further preferably 2 hours or less.

&Lt; Embodiment 2-2 &

In Embodiment 2-1, the first semiconductor element 11 is fixed to the adherend 1 with the first adhesive film 21, and the electrical connection between the first semiconductor element 11 and the adherend 1 is achieved by the wire bonding 31 In Embodiment 2-2, the flip chip connection using the protruding electrodes 43 provided on the first semiconductor element 41 is used for fixing and electrical connection therebetween. Therefore, Embodiment 2-2 differs from Embodiment 2-1 only in the fixing form in the first fixing step. The details of the embodiment 2-2 can be suitably employed in the embodiment 1-2 described above. Hereinafter, differences from the first and second embodiments will be described.

The second semiconductor element 12 is fixed to the adherend 1 by fixing the second semiconductor element 12 to the adherend 1 and then thermally curing the adhesive film 22 for forming under the pressurized atmosphere. The same condition as that in Embodiment 2-1 can be adopted as the conditions for thermally curing the mortise adhesive film 22.

(Other Embodiments)

The other embodiment in the second embodiment can suitably adopt the one in the first embodiment.

&Quot; Third Embodiment &

A third embodiment of the present invention is an adhesive film for holding a first semiconductor element fixed on an adherend and fixing a second semiconductor element different from the first semiconductor element to an adherend,

The melt viscosity at a shear rate of 50 s &lt; ^-1 &gt; at 100 DEG C is 800 Pa · s or less,

And a melt viscosity at a shear rate of 5s &lt; ^-1 &gt; at 150 DEG C of 50 Pa · s or more.

Hereinafter, the third embodiment will be described focusing on the differences from the first embodiment. The adhesive sheet or the like of this embodiment can exhibit the same general characteristics as those of the adhesive sheet or the like of the first embodiment as characteristics other than those described in the section of this embodiment. The constitution, components, composition and blending amount of the dicing film, the adhesive film and the dicing die-bonding film of the present embodiment and the manufacturing method thereof can be suitably adopted as described in the first embodiment. Hereinafter, specific matters of the present embodiment will be described.

&Lt; Embodiment 3-1 >

&Lt; Adhesive film &

In the adhesive film 22, the melt viscosity at a shear rate of 50s &lt; ^-1 &gt; at 100 DEG C is 800 Pa · s or less. The upper limit of the melt viscosity is preferably 600 Pa · s or less, more preferably 400 Pa · s or less. By adopting the upper limit of the melt viscosity, when the second semiconductor element is fixed to the adherend by the adhesive film, the following property of the adhesive film to the surface structure of the adherend is enhanced, Can be improved. As a result, generation of voids in the semiconductor device can be prevented, and a highly reliable semiconductor device can be manufactured. The lower limit of the melt viscosity is preferably 100 Pa · s or more, more preferably 200 Pa · s or more. By adopting such a lower limit, it is possible to reduce the release of the adhesive film from the region of the second semiconductor element when viewed from the plane when the second semiconductor element is fixed to the adherend by the adhesive film.

In the adhesive film 22, the melt viscosity at a shear rate of 5s &lt; ^-1 &gt; at 150 DEG C is 50 Pa · s or more. The lower limit of the melt viscosity is preferably 100 Pa · s or more, more preferably 200 Pa · s or more. By setting the lower limit of the melt viscosity in this range, it is possible to prevent deformation of the adhesive film during lamination of the second semiconductor elements and during thermal curing by pressurization, thereby preventing displacement of the fixing position of the second semiconductor element . The upper limit of the melt viscosity is preferably 2000 Pa · s or less, more preferably 1000 Pa · s or less. By adopting the upper limit as described above, it is possible to impart appropriate flexibility to the adhesive film, thereby reducing the size of voids between the adhesive film and the adherend due to the pressure during the thermal curing. As a result, Improvement can be achieved.

<Method of Manufacturing Semiconductor Device>

In the method of manufacturing a semiconductor device according to the present embodiment, an adherend on which at least one first semiconductor element is mounted (fixed) through a first fixing step and a first wire bonding step is prepared in advance (adherend preparation step) , The first semiconductor element is fixed to the adherend by an adhesive film having passed through dicing and pick-up, while the first semiconductor element is embedded and a second semiconductor element different from the first semiconductor element is fixed. 3A to 3H are cross-sectional views schematically showing one process of a manufacturing method of a semiconductor device according to an embodiment of the present invention.

In addition, the manufacturing method of the semiconductor device of the present embodiment and the like can appropriately adopt the one described in the first embodiment. Hereinafter, specific matters of the present embodiment will be described.

The melt viscosity of the mortar adhesive film 22 at a shear rate of 50s ^-1 at 100 ° C is set to a predetermined range so that the melt viscosity of the melt adhesive film 22 The adhesiveness between the pneumatic adhesive film 22 and the adherend 1 can be improved.

Since the forming adhesive film 22 is semi-cured, the forming adhesive film 22 is placed on the adherend 1 and then subjected to a heat treatment under a predetermined condition to thermally cure the fixing adhesive film 22 The second semiconductor element 12 is fixed on the adhered object 1. The temperature for the heat treatment is preferably 100 to 200 占 폚, more preferably 120 to 180 占 폚. The heat treatment time is preferably 0.25 to 10 hours, more preferably 0.5 to 8 hours. The heat curing is preferably carried out under pressurized conditions. As a result, it is possible to reduce the size of the voids between the puckering adhesive film 22 and the adherend 1, and the adhesion between the two is improved, whereby a highly reliable semiconductor device can be manufactured. The pressure is preferably in the range of 1 to 20 kg / cm ² (9.8 × 10 ^-2 MPa to 1.96 MPa), more preferably in the range of 3 to 15 kg / cm ² (2.9 × 10 ^-1 MPa to 1.47 MPa) . The heating and curing under pressure can be carried out, for example, in a chamber filled with an inert gas.

Since the melt viscosity of the embossing adhesive film 22 at a shear rate of 5s &lt; ^-1 &gt; at 150 DEG C is within a predetermined range, the displacement of the fixed position of the second semiconductor element 12 at the time of pressurization- Can be achieved.

&Lt; Embodiment 3-2 &

In Embodiment 3-1, the fixing of the first semiconductor element to the adherend is performed by an adhesive film, and the electrical connection between the first semiconductor element and the adherend is achieved by wire bonding. In Embodiment 3-2, The flip chip connection using the protruding electrodes is used to fix and electrically connect the two. Therefore, Embodiment 3-2 differs from Embodiment 3-1 only in the fixing form in the first fixing step. The details of the embodiment 3-2 can be suitably employed in the embodiment 1-2 described above. Hereinafter, differences from the first and second embodiments will be described.

The adhesive film 22 is thermally cured so that the second semiconductor element 12 is adhered to the adherend 1 by carrying out heat treatment under predetermined conditions after the placement of the adhesive film 22 for a piece on the adherend 1, . As the heat treatment conditions, the same conditions as in Embodiment 3-1 can be adopted. The heat curing is preferably carried out under pressurized conditions. The same conditions as in Embodiment 3-1 can be adopted as the pressurizing condition.

Since the melt viscosity of the embossing adhesive film 22 at a shear rate of 5s &lt; ^-1 &gt; at 150 DEG C is within a predetermined range, the displacement of the fixed position of the second semiconductor element 12 at the time of pressurization- Can be achieved.

(Other Embodiments)

Other embodiments in the third embodiment can appropriately employ the one in the first embodiment.

[Example]

Hereinafter, a preferred embodiment of the present invention will be described in detail by way of example. However, the materials and the compounding amounts described in this embodiment are not intended to limit the scope of the present invention to them, but are merely illustrative examples, unless otherwise specified.

[First Embodiment]

Each of the following examples corresponds to the adhesive sheet according to the first embodiment.

[Examples 1 to 6 and Comparative Examples 1 to 3]

(Production of adhesive film)

Acrylic resins A to C, epoxy resins A and B, phenol resin, silica and a thermosetting catalyst were dissolved in methyl ethyl ketone at a ratio shown in Table 1 to prepare an adhesive composition solution having a concentration of 40 to 50% by weight.

Details of the abbreviations and components in the following Table 1 are as follows.

Acrylic resin A: SG-70L manufactured by Nagase Chemtex Co.

Acrylic resin B: WS-023 KE30 manufactured by Nagase Chemtex Co.

Acrylic resin C: SG-280 KE23 manufactured by Nagase Chemtech

Epoxy resin A: KI-3000 manufactured by Toto Kasei Kabushiki Kaisha

Epoxy resin B: JER YL980 manufactured by Mitsubishi Chemical Corporation

Phenol resin: MEH-7800H manufactured by Meiwa Kasei Kabushiki Kaisha

Silica: SE-2050MC manufactured by Admatechs Kabushiki Kaisha

Thermal curing catalyst: TPP-K manufactured by HAKKO Chemical Co., Ltd.

The adhesive composition solution thus prepared was coated on a mold releasing film including a polyethylene terephthalate film having a thickness of 50 占 퐉 which was subjected to a silicon release treatment as a release liner and then dried at 130 占 폚 for 2 minutes to prepare an adhesive film having a thickness of 40 占 퐉 Respectively. Further, the adhesive film thus formed was bonded to three sheets under the following lamination conditions, thereby producing an adhesive film having a thickness of 120 탆.

&Lt; Lamination condition >

Laminator equipment: Roll laminator

Lamination speed: 10mm / min

Laminate pressure: 0.15 MPa

Laminator temperature: 60 ℃

(Measurement of melt viscosity)

The melt viscosities of the respective adhesive films before heat curing prepared in each of the Examples and Comparative Examples were measured at 120 ° C. That is, it was measured by a parallel plate method using a rheometer (RS-1, manufactured by HAAKE). A sample of 0.1 g was taken from the adhesive film prepared in each of the Examples and Comparative Examples, and the sample was put into a plate heated to 120 캜 in advance. The shear rate was 50 s ^-1, and the value after 300 seconds from the start of measurement was taken as the melt viscosity. The gap between the plates was 0.1 mm. The results are shown in Table 1 below.

(Measurement of storage elastic modulus)

The storage elastic modulus was measured by the following procedure. For each of the adhesive films before curing, the storage modulus at 25 占 폚 was measured using a viscoelasticity measuring apparatus (manufactured by Rheometrics Co., Ltd .: Format: RSA-II). More specifically, the adhesive film was cut so that the sample size was 30 mm long × 10 mm wide and the measurement specimen was set on a jig for film tensile measurement, and the frequency was 1.0 Hz, 0.025% at a temperature of -30 to 100 ° C., At a rate of 10 占 폚 / min, and reading the measured value at 25 占 폚. The results are shown in Table 1 below.

(Preparation of dicing film)

As a substrate, a polyethylene terephthalate film (PET film) having a thickness of 50 占 퐉 was prepared.

86.4 parts of 2-ethylhexyl acrylate (hereinafter also referred to as &quot; 2EHA &quot;) and 2-hydroxyethyl acrylate (hereinafter also referred to as &quot; HEA &quot;) were placed in a reaction vessel equipped with a thermometer, , 0.2 part of benzoyl peroxide and 65 parts of toluene, and polymerization was carried out at 61 ° C for 6 hours in a nitrogen stream to obtain an acrylic polymer A.

14.6 parts of 2-methacryloyloxyethyl isocyanate (hereinafter also referred to as &quot; MOI &quot;) was added to the acrylic polymer A, and an addition reaction treatment was carried out at 50 DEG C for 48 hours in an air stream to obtain an acrylic polymer A '.

Subsequently, 8 parts of a polyisocyanate compound (trade name: Coronate L, manufactured by Nippon Polyurethane Co., Ltd.) and 5 parts of a photopolymerization initiator (trade name: Irgacure 651, manufactured by Ciba Specialty Chemicals) were added to 100 parts of the acrylic polymer A ' Was added to obtain a pressure-sensitive adhesive composition solution.

The resulting pressure-sensitive adhesive composition solution was coated on the prepared substrate and dried to form a pressure-sensitive adhesive layer having a thickness of 30 m to obtain a dicing film.

(Production of dicing die-bonding film)

The adhesive films prepared in each of the Examples and Comparative Examples were transferred onto the pressure-sensitive adhesive layer of the above-mentioned dicing film to obtain a dicing die-bonding film. The conditions of the laminate are as follows.

&Lt; Lamination condition >

Laminator equipment: Roll laminator

Lamination speed: 10mm / min

Laminate pressure: 0.15 MPa

Laminator temperature: 30 ℃

(Fabrication of controller mounting substrate)

The adhesive film of the composition of Example 1 was formed into a thickness of 10 mu m to obtain an adhesive film for a controller chip. This was attached to a controller chip having a 2 mm square and a thickness of 50 탆 under the condition of a temperature of 40 캜. Further, the semiconductor chip was bonded to the BGA substrate via the adhesive film. The conditions at that time were a temperature of 120 ° C and a pressure of 0.1 MPa for 1 second. The BGA substrate to which the controller chip was adhered was heat-treated at 130 DEG C for 4 hours in a dryer to thermally cure the adhesive film.

Subsequently, wire bonding was performed on the controller chip under the following conditions using a wire bonder (Shinkawa Co., Ltd., trade name &quot; UTC-1000 &quot;). As a result, a controller mounting board on which a controller chip is mounted on the BGA substrate was obtained.

<Wire Bonding Condition>

Temp .: 175 ° C

Au-wire: 23㎛

S-LEVEL: 50㎛

S-SPEED: 10mm / s

TIME: 15ms

US-POWER: 100

FORCE: 20gf

S-FORCE: 15gf

Wire pitch: 100 탆

Wire loop height: 30㎛

(Fabrication of semiconductor device)

Separately, the dicing die-bonding film is used to dice the semiconductor wafer in the following manner. Then, the semiconductor device is manufactured through the pick-up of the semiconductor chip, and at the same time, .

The dicing die-bonding films of Examples and Comparative Examples were bonded to the surface of the silicon wafer with one-side bumps on the opposite side to the circuit surface with the adhesive film as the bonding surface. The following silicon wafers were used as the one-sided bumps. The bonding conditions are as follows.

&Lt; Silicon wafer with one side bump >

Thickness of silicon wafer: 100 탆

Material of low dielectric material layer: SiN film

Thickness of low dielectric material layer: 0.3 탆

Height of bump: 60 탆

Bump pitch: 150 탆

Bump material: Solder

&Lt; Bonding condition &

Bonding device: DR-3000III (manufactured by Nitto Seiki Co., Ltd.)

Lamination speed: 10mm / s

Laminate pressure: 0.15 MPa

Laminator temperature: 60 ℃

After the bonding, dicing was performed under the following conditions. In addition, the dicing was performed in a full cut so as to have a chip size of 10 mm square.

<Dicing Condition>

Dicing apparatus: "DFD-6361" manufactured by DISCO Corporation

Dicing ring: &quot; 2-8-1 &quot; (Disco)

Dicing speed: 30mm / sec

Dicing blade:

Z1; &Quot; 203O-SE 27HCDD &quot;

Z2; &Quot; 203O-SE 27HCBB &quot;

Number of revolutions of dicing blade:

Z1; 40,000rpm

Z2; 45,000rpm

Cutting method: Step cut

Wafer chip size: 10.0mm square

Subsequently, ultraviolet rays were irradiated from the base side to cure the pressure-sensitive adhesive layer. An ultraviolet ray irradiation apparatus (product name: UM810, manufactured by Nitto Seiki Co., Ltd.) was used for ultraviolet ray irradiation, and the ultraviolet radiation amount was set to 400 mJ / cm ² .

Thereafter, the stacked body of the adhesive film and the semiconductor chip was picked up from the substrate side of each dicing film in a push-up manner by a needle. The pickup conditions are as follows.

<Pick-up conditions>

Die bond device: manufactured by Shin-Kawa Corporation, device name: SPA-300

Number of Needles: 9

Needle push-up amount: 350 탆 (0.35 mm)

Needle push-up speed: 5mm / sec

Adsorption holding time: 80ms

Subsequently, the controller chip of the controller mounting substrate was embedded by the adhesive film of the picked-up laminate, and the semiconductor chip was bonded to the BGA substrate. The bonding conditions at that time were 120 deg. C and a pressure of 0.1 MPa for 2 seconds. Further, the BGA substrate to which the semiconductor chip was bonded was heat-treated at 130 DEG C for 4 hours in a dryer to thermally cure the adhesive film, thereby manufacturing a semiconductor device.

(Porosity evaluation)

The presence or absence of voids in the fabricated semiconductor device was observed using an ultrasonic imaging apparatus (FS200II, manufactured by Hitachi Fine Tec). The area occupied by the voids in the observed image was calculated using binarization software (WinRoof ver. 5.6). A case where the area occupied by the voids was 10% or less with respect to the surface area of the adhesive film was evaluated as &quot; &quot;, and a case where the area exceeded 10% was evaluated as &quot; The results are shown in Table 1 below.

(Empty evaluation)

A planar image of the manufactured semiconductor device was observed to evaluate whether or not the adhesive film from the fixed semiconductor chip had come out. The amount of the semiconductor chip was measured using an image processing apparatus (trade name: FineSAT FS300III, manufactured by Hitachi Engineering &amp; Co., Ltd.), and the amount of the maximum vacancy from the end of the semiconductor chip was 0.5 mm or less (5% or less of the length of one side of the chip) was evaluated as &quot;? &Quot;, and the case exceeding 0.5 mm was evaluated as &quot; The results are shown in Table 1 below.

It has been found that voids and voids are all suppressed in the semiconductor device manufactured using the adhesive film according to the embodiment, and it is possible to manufacture a highly reliable semiconductor device. On the other hand, in Comparative Example 1, the releasing property was suppressed, but the releasing property was deteriorated. This is believed to be attributable to the fact that the adhesive viscosity of the adhesive film at 120 캜 was too high and sufficient adhesion to the substrate including the controller chip was not obtained. In Comparative Examples 2 and 3, although the porosity was good, the amount of vacancies was large. This is considered to be attributable to the fact that the melt viscosity of the adhesive film at 120 캜 was too low and the deformation of the adhesive film due to the pressure at the time of bonding the semiconductor chip was too large.

[Second Embodiment]

Each of the following embodiments corresponds to the semiconductor device manufacturing method according to the second embodiment.

[Production of adhesive film for porcelain]

Acrylic resins A to C, epoxy resins A and B, phenol resin, silica and a thermosetting catalyst were dissolved in methyl ethyl ketone at a ratio shown in Table 2 to prepare an adhesive composition solution having a concentration of 40 to 50% by weight.

Details of the abbreviations and components in the following Table 2 are as follows.

Acrylic resin A: SG-70L manufactured by Nagase Chemtex Co.

Acrylic resin B: WS-023 KE30 manufactured by Nagase Chemtex Co.

Acrylic resin C: SG-280 KE23 manufactured by Nagase Chemtech

Epoxy resin A: KI-3000 manufactured by Toto Kasei Kabushiki Kaisha

Epoxy resin B: JER YL980 manufactured by Mitsubishi Chemical Corporation

Phenol resin: MEH-7800H manufactured by Meiwa Kasei Kabushiki Kaisha

Silica: SE-2050MC manufactured by Admatechs Kabushiki Kaisha

Thermal curing catalyst: TPP-K manufactured by HAKKO Chemical Co., Ltd.

The adhesive composition solution thus prepared was coated on a mold releasing film including a polyethylene terephthalate film having a thickness of 50 占 퐉 which was subjected to a silicon release treatment as a release liner and then dried at 130 占 폚 for 2 minutes to prepare an adhesive film having a thickness of 40 占 퐉 Respectively. The resulting adhesive coating film was laminated in three pieces under the following lamination conditions to produce a 120 m-thick puckering adhesive film.

&Lt; Lamination condition >

Laminator equipment: Roll laminator

Lamination speed: 10mm / min

Laminate pressure: 0.15 MPa

Laminator temperature: 60 ℃

[Production of dicing film]

As a substrate, a polyethylene terephthalate film (PET film) having a thickness of 50 占 퐉 was prepared.

86.4 parts of 2-ethylhexyl acrylate (hereinafter also referred to as &quot; 2EHA &quot;) and 2-hydroxyethyl acrylate (hereinafter also referred to as &quot; HEA &quot;) were placed in a reaction vessel equipped with a thermometer, , 0.2 part of benzoyl peroxide and 65 parts of toluene, and polymerization was carried out at 61 ° C for 6 hours in a nitrogen stream to obtain an acrylic polymer A.

14.6 parts of 2-methacryloyloxyethyl isocyanate (hereinafter also referred to as &quot; MOI &quot;) was added to the acrylic polymer A, and an addition reaction treatment was carried out at 50 DEG C for 48 hours in an air stream to obtain an acrylic polymer A '.

Subsequently, 8 parts of a polyisocyanate compound (trade name: Coronate L, manufactured by Nippon Polyurethane Co., Ltd.) and 5 parts of a photopolymerization initiator (trade name: Irgacure 651, manufactured by Ciba Specialty Chemicals) were added to 100 parts of the acrylic polymer A ' Was added to obtain a pressure-sensitive adhesive composition solution.

The resulting pressure-sensitive adhesive composition solution was coated on the prepared substrate and dried to form a pressure-sensitive adhesive layer having a thickness of 30 m to obtain a dicing film.

[Production of dicing die-bonding film]

The mortar adhesive film was transferred onto the pressure-sensitive adhesive layer of the dicing film to obtain a dicing die-bonding film. The conditions of the laminate are as follows.

&Lt; Lamination condition >

Laminator equipment: Roll laminator

Lamination speed: 10mm / min

Laminate pressure: 0.15 MPa

Laminator temperature: 30 ℃

[Fabrication of controller mounting substrate]

The adhesive film of the composition of Example 1 was formed into a thickness of 10 mu m to obtain an adhesive film for a controller chip. This was attached to a controller chip having a 2 mm square and a thickness of 50 탆 under the condition of a temperature of 40 캜. Further, the controller chip was bonded to the BGA substrate via the adhesive film. The conditions at that time were a temperature of 120 ° C and a pressure of 0.1 MPa for 1 second. The BGA substrate to which the controller chip was adhered was heat-treated at 130 DEG C for 4 hours in a dryer to thermally cure the adhesive film.

Subsequently, wire bonding was performed on the controller chip under the following conditions using a wire bonder (Shinkawa Co., Ltd., trade name &quot; UTC-1000 &quot;). As a result, a controller mounting board on which a controller chip is mounted on the BGA substrate was obtained.

<Wire Bonding Condition>

Temp .: 175 ° C

Au-wire: 23㎛

S-LEVEL: 50㎛

S-SPEED: 10mm / s

TIME: 15ms

US-POWER: 100

FORCE: 20gf

S-FORCE: 15gf

Wire pitch: 100 탆

Wire loop height: 30㎛

[Fabrication of semiconductor device]

Using a dicing die-bonding film, a semiconductor device was manufactured in the following manner.

A dicing die-bonding film was bonded to the surface of the silicon wafer having the one-sided bumps on the opposite side to the circuit surface, with the bonding film for bonding used as the bonding surface. The following silicon wafers were used as the one-sided bumps. The bonding conditions are as follows.

&Lt; Silicon wafer with one side bump >

Thickness of silicon wafer: 100 탆

Material of low dielectric material layer: SiN film

Thickness of low dielectric material layer: 0.3 탆

Height of bump: 60 탆

Bump pitch: 150 탆

Bump material: Solder

&Lt; Bonding condition &

Bonding device: DR-3000III (manufactured by Nitto Seiki Co., Ltd.)

Lamination speed: 10mm / s

Laminate pressure: 0.15 MPa

Laminator temperature: 60 ℃

After the bonding, dicing was performed under the following conditions. In addition, the dicing was performed in a full cut so as to have a chip size of 10 mm square.

<Dicing Condition>

Dicing apparatus: "DFD-6361" manufactured by DISCO Corporation

Dicing ring: &quot; 2-8-1 &quot; (Disco)

Dicing speed: 30mm / sec

Dicing blade:

Z1; &Quot; 203O-SE 27HCDD &quot;

Z2; &Quot; 203O-SE 27HCBB &quot;

Number of revolutions of dicing blade:

Z1; 40,000rpm

Z2; 45,000rpm

Cutting method: Step cut

Wafer chip size: 10.0mm square

Subsequently, ultraviolet rays were irradiated from the substrate side to cure the pressure-sensitive adhesive layer. An ultraviolet ray irradiation apparatus (product name: UM810, manufactured by Nitto Seiki Co., Ltd.) was used for ultraviolet ray irradiation, and the ultraviolet radiation amount was set to 400 mJ / cm ² .

Thereafter, the stacked body of the puckering adhesive film and the semiconductor chip was picked up from the substrate side of the dicing film by a pushing-up method by a needle. The pickup conditions are as follows.

<Pick-up conditions>

Die bond device: manufactured by Shin-Kawa Corporation, device name: SPA-300

Number of Needles: 9

Needle push-up amount: 350 탆 (0.35 mm)

Needle push-up speed: 5mm / sec

Adsorption holding time: 1000 ms

Subsequently, the controller chip of the controller mounting substrate was embedded by the bonding adhesive film of the picked up laminate, and the semiconductor chip was bonded to the BGA substrate. The bonding conditions at that time were 100 캜, pressure 0.1 MPa, and 1 second. Thus, a BGA substrate with a semiconductor chip was obtained.

Further, the BGA substrate with the semiconductor chip was placed in a pressure oven and heat-treated at 150 DEG C for 1 hour under the pressure conditions shown in Table 2 to thermally cure the bonding adhesive film to obtain a semiconductor device.

[evaluation]

The following evaluation was made on the adhesive film for pouches and the semiconductor device. The results are shown in Table 2.

(Melt viscosity at 120 캜)

The melt viscosity of the mortar adhesive film at 120 캜 was measured by a parallel plate method using a rheometer (RS-1, manufactured by HAAKE). 0.1 g of a sample was taken from the adhesive film for porcelain, which was put in a plate heated to 120 캜 in advance. The shear rate was 50 s ^-1, and the value after 300 seconds from the start of measurement was taken as the melt viscosity. The gap between the plates was 0.1 mm.

(Melt viscosity at 150 캜)

The melt viscosity of the mortar adhesive film at 150 캜 was measured by a parallel plate method using a rheometer (RS-1, manufactured by HAAKE). 0.1 g of the sample was taken from the adhesive film for forming and was put into a plate heated to 150 캜 in advance. The shear rate was set to 5s &lt; ^{-1 &} gt ;, and the value after 120 seconds from the start of measurement was taken as the melt viscosity. The gap between the plates was 0.1 mm.

(Void area)

With respect to the semiconductor device, the presence or absence of voids between the bonding adhesive film for forming and the BGA substrate was observed using an ultrasonic imaging apparatus (FS200II, manufactured by Hitachi Fine Tec). The area occupied by the voids in the observed image was calculated using binarization software (WinRoof ver. 5.6). A case where the area occupied by the voids was 5% or less with respect to the surface area of the adhesive film was evaluated as &quot; &quot;, and a case where the area exceeded 5% was evaluated as &quot; x &quot;.

In the semiconductor devices of Examples 1 to 7 in which the adhesive film for forming pores was thermally cured under pressure, the void area was small and the reliability was excellent. On the other hand, in the semiconductor devices of Comparative Examples 1 to 6 in which the adhesive film for forming mats was thermally cured under atmospheric pressure, the void area was larger than in Examples 1 to 7, and reliability was lowered.

[Third embodiment]

Each of the following embodiments corresponds to the adhesive sheet according to the third embodiment.

[Examples 1 to 6 and Comparative Examples 1 to 3]

(Production of adhesive film)

Acrylic resins A to C, epoxy resins A and B, phenol resin, silica and a thermosetting catalyst were dissolved in methyl ethyl ketone at a ratio shown in Table 3 to prepare an adhesive composition solution having a concentration of 40 to 50% by weight.

Details of the abbreviations and components in the following Table 3 are as follows.

Acrylic resin A: SG-70L manufactured by Nagase Chemtex Co.

Acrylic resin B: WS-023 KE30 manufactured by Nagase Chemtex Co.

Acrylic resin C: SG-280 KE23 manufactured by Nagase Chemtech

Epoxy resin A: KI-3000 manufactured by Toto Kasei Kabushiki Kaisha

Epoxy resin B: JER YL980 manufactured by Mitsubishi Chemical Corporation

Phenol resin: MEH-7800H manufactured by Meiwa Kasei Kabushiki Kaisha

Silica: SE-2050MC manufactured by Admatechs Kabushiki Kaisha

Thermal curing catalyst: TPP-K manufactured by HAKKO Chemical Co., Ltd.

The adhesive composition solution thus prepared was coated on a mold releasing film including a polyethylene terephthalate film having a thickness of 50 占 퐉 which was subjected to a silicon release treatment as a release liner and then dried at 130 占 폚 for 2 minutes to prepare an adhesive film having a thickness of 40 占 퐉 Respectively. Further, the adhesive film thus formed was bonded to three sheets under the following lamination conditions, thereby producing an adhesive film having a thickness of 120 탆.

&Lt; Lamination condition >

Laminator equipment: Roll laminator

Lamination speed: 10mm / min

Laminate pressure: 0.15 MPa

Laminator temperature: 60 ℃

(Measurement of melt viscosity)

The melt viscosities at 100 ° C and 150 ° C were measured for the respective adhesive films before thermal curing prepared in each of the Examples and Comparative Examples. That is, it was measured by a parallel plate method using a rheometer (RS-1, manufactured by HAAKE). A sample of 0.1 g was taken from the adhesive film prepared in each of the examples and the comparative examples, and the sample was put into a plate heated to 100 ° C in advance. The shear rate was 50 s ^-1, and the value after 300 seconds from the start of measurement was regarded as the melt viscosity at the high shear rate. Separately, a sample of 0.1 g was taken and placed in a plate heated to 150 ° C in advance. The shear rate was 5s &lt; ^{-1 &} gt ;, and the value after 120 seconds from the start of measurement was defined as the melt viscosity at low shear rate. The gap between the plates was 0.1 mm. The results are shown in Table 3 below.

(Measurement of storage elastic modulus)

The storage elastic modulus was measured by the following procedure. For each of the adhesive films before curing, the storage elastic modulus at 25 占 폚 was measured using a viscoelasticity measuring apparatus (manufactured by Rheometrics Co., Ltd .: Format: RSA-II). More specifically, the adhesive film was cut so that the sample size was 30 mm long × 10 mm wide and the measurement specimen was set on a jig for film tensile measurement, and the frequency was 1.0 Hz, 0.025% at a temperature of -30 to 100 ° C., At a rate of 10 占 폚 / min, and reading the measured value at 25 占 폚. The results are shown in Table 3 below.

(Preparation of dicing film)

As a substrate, a polyethylene terephthalate film (PET film) having a thickness of 50 占 퐉 was prepared.

86.4 parts of 2-ethylhexyl acrylate (hereinafter also referred to as &quot; 2EHA &quot;) and 2-hydroxyethyl acrylate (hereinafter also referred to as &quot; HEA &quot;) were placed in a reaction vessel equipped with a thermometer, , 0.2 part of benzoyl peroxide and 65 parts of toluene, and polymerization was carried out at 61 ° C for 6 hours in a nitrogen stream to obtain an acrylic polymer A.

14.6 parts of 2-methacryloyloxyethyl isocyanate (hereinafter also referred to as &quot; MOI &quot;) was added to the acrylic polymer A, and an addition reaction treatment was carried out at 50 DEG C for 48 hours in an air stream to obtain an acrylic polymer A '.

Subsequently, 8 parts of a polyisocyanate compound (trade name: Coronate L, manufactured by Nippon Polyurethane Co., Ltd.) and 5 parts of a photopolymerization initiator (trade name: Irgacure 651, manufactured by Ciba Specialty Chemicals) were added to 100 parts of the acrylic polymer A ' Was added to obtain a pressure-sensitive adhesive composition solution.

The resulting pressure-sensitive adhesive composition solution was coated on the prepared substrate and dried to form a pressure-sensitive adhesive layer having a thickness of 30 m to obtain a dicing film.

(Production of dicing die-bonding film)

The adhesive films prepared in each of the Examples and Comparative Examples were transferred onto the pressure-sensitive adhesive layer of the above-mentioned dicing film to obtain a dicing die-bonding film. The conditions of the laminate are as follows.

&Lt; Lamination condition >

Laminator equipment: Roll laminator

Lamination speed: 10mm / min

Laminate pressure: 0.15 MPa

Laminator temperature: 30 ℃

(Fabrication of controller mounting substrate)

The adhesive film of the composition of Example 1 was formed into a thickness of 10 mu m to obtain an adhesive film for a controller chip. This was attached to a controller chip having a 2 mm square and a thickness of 50 탆 under the condition of a temperature of 40 캜. Further, the semiconductor chip was bonded to the BGA substrate via the adhesive film. The conditions at that time were a temperature of 120 ° C and a pressure of 0.1 MPa for 1 second. The BGA substrate to which the controller chip was adhered was heat-treated at 130 DEG C for 4 hours in a dryer to thermally cure the adhesive film.

Subsequently, wire bonding was performed on the controller chip under the following conditions using a wire bonder (Shinkawa Co., Ltd., trade name &quot; UTC-1000 &quot;). As a result, a controller mounting board on which a controller chip is mounted on the BGA substrate was obtained.

<Wire Bonding Condition>

Temp .: 175 ° C

Au-wire: 23㎛

S-LEVEL: 50㎛

S-SPEED: 10mm / s

TIME: 15ms

US-POWER: 100

FORCE: 20gf

S-FORCE: 15gf

Wire pitch: 100 탆

Wire loop height: 30㎛

(Fabrication of semiconductor device)

Separately, the dicing die-bonding film is used to dice the semiconductor wafer in the following manner. Then, the semiconductor device is manufactured through the pick-up of the semiconductor chip, and at the same time, The sex was evaluated.

The dicing die-bonding films of Examples and Comparative Examples were bonded to the surface of the silicon wafer with one-side bumps on the opposite side to the circuit surface with the adhesive film as the bonding surface. The following silicon wafers were used as the one-sided bumps. The bonding conditions are as follows.

&Lt; Silicon wafer with one side bump >

Thickness of silicon wafer: 100 탆

Material of low dielectric material layer: SiN film

Thickness of low dielectric material layer: 0.3 탆

Height of bump: 60 탆

Bump pitch: 150 탆

Bump material: Solder

&Lt; Bonding condition &

Bonding device: DR-3000III (manufactured by Nitto Seiki Co., Ltd.)

Lamination speed: 10mm / s

Laminate pressure: 0.15 MPa

Laminator temperature: 60 ℃

After the bonding, dicing was performed under the following conditions. In addition, the dicing was performed in a full cut so as to have a chip size of 10 mm square.

<Dicing Condition>

Dicing apparatus: "DFD-6361" manufactured by DISCO Corporation

Dicing ring: &quot; 2-8-1 &quot; (Disco)

Dicing speed: 30mm / sec

Dicing blade:

Z1; &Quot; 203O-SE 27HCDD &quot;

Z2; &Quot; 203O-SE 27HCBB &quot;

Number of revolutions of dicing blade:

Z1; 40,000rpm

Z2; 45,000rpm

Cutting method: Step cut

Wafer chip size: 10.0mm square

Subsequently, ultraviolet rays were irradiated from the substrate side to cure the pressure-sensitive adhesive layer. An ultraviolet ray irradiation apparatus (product name: UM810, manufactured by Nitto Seiki Co., Ltd.) was used for ultraviolet ray irradiation, and the ultraviolet radiation amount was set to 400 mJ / cm ² .

Thereafter, the stacked body of the adhesive film and the semiconductor chip was picked up from the substrate side of each dicing film in a push-up manner by a needle. The pickup conditions are as follows.

<Pick-up conditions>

Die bond device: manufactured by Shin-Kawa Corporation, device name: SPA-300

Number of Needles: 9

Needle push-up amount: 350 탆 (0.35 mm)

Needle push-up speed: 5mm / sec

Adsorption holding time: 80ms

Subsequently, the controller chip of the controller mounting substrate was embedded by the adhesive film of the picked-up laminate, and the semiconductor chip was bonded to the BGA substrate. The bonding conditions at that time were 100 캜 and a pressure of 0.1 MPa for 2 seconds.

(Porosity evaluation)

The presence or absence of voids between the adhesive film and the substrate at the step of bonding the semiconductor chip to the substrate was observed using an ultrasonic imaging apparatus (FS200II, manufactured by Hitachi Fine Tec). The area occupied by the voids in the observed image was calculated using binarization software (WinRoof ver. 5.6). A case where the area occupied by the voids was 10% or less with respect to the surface area of the adhesive film was evaluated as &quot; &quot;, and a case where the area exceeded 10% was evaluated as &quot; The results are shown in Table 3 below.

Further, the BGA substrate on which the semiconductor chips were bonded was placed in a pressure oven and heat-treated at 150 DEG C for 1 hour under the pressurized condition to thermally cure the adhesive film, thereby manufacturing a semiconductor device. Specifically, pressurization at the time of heating and curing was carried out by filling the oven with nitrogen gas at 5 kg / cm ² (0.49 MPa).

(Evaluation of Chip Displacement Prevention)

A plane image of the manufactured semiconductor device was observed to evaluate the presence or absence of displacement from the fixed position of the fixed semiconductor chip. The amount of displacement was measured using an image processing apparatus (trade name: FineSAT FS300III, manufactured by Hitachi Engineering &amp; The maximum displacement of one of the four corners of the semiconductor chip from the fixed position recognition mark formed so as to correspond to the apex of the four corners of the semiconductor chip on the substrate in advance is 0.5 mm or less Of the length) was evaluated as &quot;? &Quot;, and the case of exceeding 0.5 mm was evaluated as &quot; x &quot;. The results are shown in Table 3 below.

It has been found that the semiconductor device manufactured using the adhesive film according to the embodiment is capable of producing a highly reliable semiconductor device in which voids and chip displacements are all suppressed. On the other hand, in Comparative Example 1, although the chip displacement was suppressed, the result was that the porosity deteriorated. This is thought to be due to the fact that the melt viscosity of the adhesive film at 100 占 폚 is too high and sufficient adhesion to the substrate including the controller chip is not obtained. In Comparative Examples 2 and 3, although the releasability was good, the chip displacement amount was large. This is considered to be attributable to the fact that the adhesive viscosity of the adhesive film at 150 캜 was too low to cause deformation of the adhesive film due to the pressure at the time of pressure-hardening.

1: adherend
2: Semiconductor wafer
3: Pressure-sensitive adhesive layer
4: substrate
5: Dicing film
10: Dicing die-bonding film
11: First semiconductor element
12: second semiconductor element
13: Third semiconductor element
21: First adhesive film
22: Adhesive film
23: Third adhesive film
31, 32: Bonding wire
100, 200: Semiconductor device
T: Thickness of the adhesive film
T ₁ : Thickness of the first semiconductor element

Claims (8)

An adhesive film for holding a first semiconductor element fixed on an adherend and fixing a second semiconductor element different from the first semiconductor element to an adherend,
And a melt viscosity at a shear rate of 50 s &lt; ^-1 &gt; at 120 DEG C of 50 Pa · s or more and 500 Pa · s or less. The adhesive film according to claim 1, wherein the storage elastic modulus at 25 캜 before heat curing is 10 MPa or more and 10,000 MPa or less. 3. The composition of claim 1 comprising an inorganic filler,
Wherein the content of the inorganic filler is 10 to 80% by weight. A dicing film having a base material and a pressure-sensitive adhesive layer formed on the base material;
A dicing die-bonding film comprising the adhesive film according to any one of claims 1 to 3, which is laminated on the pressure-sensitive adhesive layer. An adherend preparing step of preparing an adherend to which the first semiconductor element is fixed,
A bonding step of bonding the adhesive film of the dicing die-bonding film of claim 4 to a semiconductor wafer,
A dicing step of dicing the semiconductor wafer and the adhesive film to form a second semiconductor element,
A pickup step of picking up the second semiconductor element together with the adhesive film, and
A fixing step of fixing the second semiconductor element to the adherend while embedding the first semiconductor element fixed to the adherend by an adhesive film picked up together with the second semiconductor element
Wherein the semiconductor device is a semiconductor device. The semiconductor device according to claim 5, wherein the adhesive film has a thickness (T) that is thicker than a thickness (T ₁ )
Wherein the adherend and the first semiconductor element are wire-bonded to each other, and a difference between the thickness (T) and the thickness (T ₁ ) is not less than 40 μm and not more than 260 μm. The semiconductor device according to claim 5, wherein the adhesive film has a thickness (T) that is thicker than a thickness (T ₁ )
Wherein the adherend and the first semiconductor element are flip-chip bonded, and the difference between the thickness (T) and the thickness (T ₁ ) is 10 μm or more and 200 μm or less. A semiconductor device obtained by the method for manufacturing a semiconductor device according to claim 5.

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