KR20150065457A - Chamber for scrubber apparatus - Google Patents

Abstract

The present invention relates to a chamber for a scrubber apparatus wherein corrosion is prevented by forming a Nix coating layer or a PI coating layer on the surface of the chamber, and pinholes not formed as before and the entire surface uniformly coated as the Nix coating layer or the PI coating layer is formed via vapor deposition. The chamber for a scrubber apparatus comprises: an organic compound monomer deposited on the surface of the chamber for a scrubber apparatus; a polyimide coating layer applied to the surface of the chamber for a scrubber apparatus after the deposition; and a Nix coating layer applied to the surface of the polyimide coating layer.

Description

[0001] CHAMBER FOR SCRUBBER APPARATUS [0002]

The present invention relates to a chamber for a scrubber apparatus, and more particularly to a chamber for a scrubber apparatus that removes harmful substances from the exhausted process gas.

The gas scrubber is divided into a wetting method and a burning method.

The wetting type scrubber is a structure that cleans and cools the exhaust gas using water. The wetting type scrubber has a relatively simple structure, and is easy to manufacture and has a large capacity. However, the water-insoluble gas can not be treated, There is a problem that it is inadequate for the treatment of an exhaust gas containing a hydrogen group.

A burning type scrubber has a structure in which a burner such as a hydrogen burner is directly burnt by allowing a gas to pass through it, or indirectly burned by forming a high-temperature chamber using a heat source and allowing exhaust gas to pass therethrough. Such a burning type scrubber has an excellent effect in the treatment of flammable gas, but is unsuitable for the treatment of gas which is not well burned.

On the other hand, in a reaction process using a pyrogenic gas such as hydrogen and a gas such as silane (SiH4), for example, a semiconductor manufacturing process is performed at a high temperature higher than room temperature, in processing the exhaust gas, It is necessary to cool down.

Therefore, in the semiconductor manufacturing process, a mixed gas scrubber combining a wetting type scrubber and a burning type scrubber may be used.

The mixed gas scrubber as described above has a structure in which the exhaust gas is firstly burned in the combustion chamber to remove the ignitable gas and the explosive gas, and then the secondary gas is contained in the water tank to dissolve the water-soluble toxic gas in water.

The process gas used in the semiconductor manufacturing facility is exhausted to the exhaust line by a pump. The process gas is toxic, corrosive, explosive, and highly inflammable, and there are many processes for discharging toxic gas during the process of producing semiconductor devices . For example, gases such as SiH4, SiH2, NO, AsH3, PH3, NH3, N2O, and SiH2Cl2 used in a chemical vapor deposition (CVD) process, an ion implantation process, an etching process, Are used. The gases that are processed and discharged contain various kinds of toxic substances. These toxic gases are not only harmful to the human body but also have flammability and corrosiveness, which can cause accidents such as fire.

In addition, since this toxic gas is released into the atmosphere, it causes severe environmental pollution. Therefore, it is subjected to a purification process in a filtration apparatus before the gas is released into the atmosphere.

Especially, the gas discharged from the chemical vapor deposition process contains a large amount of ammonium chloride, and the ammonium chloride has a property of solidifying at a low temperature. Therefore, although it exists in the gas phase inside the chemical vapor deposition equipment, it solidifies due to the temperature drop when passing through the piping, and is deposited in the form of powder on the inner side of the pipe or inside the vacuum pump, and the deposited powder causes an abnormality in the exhaust system .

However, since the conventional scrubber apparatus is in contact with the process gas, there is a problem that corrosion occurs due to the process gas.

Particularly, in the conventional chamber for a scrubber apparatus, Teflon coating is performed to suppress corrosion. However, when the Teflon coating is performed, not only the chamber surface is uniformly coated but also pinholes are generated on the Teflon coated surface, There is a problem that the corrosive substance penetrates and the corrosion proceeds.

Korean Patent No. 10-0742336 Korean Registration Number 10-0452950 Korean Registration Number 10-0325197 Korean Registration Number 10-0307808

It is an object of the present invention to provide a chamber for a scrubber apparatus that removes harmful substances from the exhausted process gas.

According to an aspect of the present invention, there is provided a chamber for a scrubber apparatus, comprising: an organic compound monomer vapor-deposited on a surface of a chamber for the scrubber apparatus through a CVD chamber; A polyimide-coated polyimide coating layer on the chamber surface for the deposited scrubber device by CVD vacuum deposition; And a Knix coating layer knuckled on the surface of the polyimide coating layer by CVD vacuum deposition.

According to another aspect of the present invention, there is provided a chamber for a scrubber apparatus, comprising: an organic compound monomer vapor-deposited on a surface of a chamber for the scrubber apparatus through a CVD chamber; A nitric-coated knuckle coating layer on the chamber surface for the deposited scrubber device by CVD vacuum deposition; And a polyimide-coated polyimide coating layer on the surface of the nickle coating layer by CVD vacuum deposition.

The organic compound monomer is characterized by using at least one compound selected from alkylsilane, alkyltrialkoxysilane, alkoxysilane, aminoalkyltrialkoxysilane and mercaptoalkylalkoxysilane.

The chamber for the scrubber apparatus according to the present invention has an effect of preventing corrosion by forming a nick coating layer or a PI coating layer on the surface.

Further, since the chamber for a scrubber apparatus according to the present invention is formed with a nit coating layer or a PI coating layer by vapor deposition, there is an effect that not only a conventional pin hole is formed, but also the entire surface is uniformly coated.

1 is a flowchart of a knock and PI coating method according to an embodiment of the present invention
2 is a flow chart of a knock and PI coating method according to the second embodiment of the present invention
3 is a perspective view of a chamber for a scrubber apparatus before coating with Knicks,
Figure 4 is a perspective view of a chamber for a scrubber apparatus after knock coating according to the present invention;

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. Even if the terms are the same, it is to be noted that when the portions to be displayed differ, the reference signs do not coincide.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.

The terms first, second, etc. in this specification may be used to describe various elements, but the elements should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component. And / or < / RTI > includes any combination of a plurality of related listed items or any of a plurality of related listed items.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the relevant art and are to be interpreted in an ideal or overly formal sense unless explicitly defined in the present application Do not.

Also, when a part is referred to as "including " an element, it does not exclude other elements unless specifically stated otherwise.

FIG. 1 is a flow chart of a knock and PI coating method according to an embodiment of the present invention, FIG. 2 is a flowchart of a knock and PI coating method according to two embodiments of the present invention, And FIG. 4 is a perspective view showing a chamber for a scrubber apparatus after the Knicks coating according to the present invention.

The chamber for the scrubber apparatus according to the present embodiment is in direct contact with the process gas used in the semiconductor, LCD, or LED process, and the surface is coated to prevent corrosion by the process gas.

First, a cleaning process (or a vacuum cleaning process) for removing contaminants on the surface of the chamber is performed. Here, the washing process may be performed through a detergent such as alcohol, or ultrasonic cleaning may be performed through isopropyl alcohol or the like.

The chamber may be made of a nonmetal-based material or a metal-based material. The non-metallic material may be glass, ceramic, acrylic, Teflon, PVC, or the like. The metallic material may be aluminum, stainless steel, or the like (S110).

Thereafter, the organic compound monomer is introduced into the chamber (or onto at least a part of the surface of the chamber (or the surface of the chamber) by a pretreatment process / operation (or primer) through a CVD (Chemical Vapor Deposition) ) Or vacuum vapor deposition (or CVD vacuum deposition).

That is, in the CVD chamber in which the chamber is accommodated, at least one liquid organic compound monomer is injected into the CVD chamber in a gaseous state, and is deposited on the chamber surface at 10 mTorr to 100 mTorr.

The organic compound monomer may be at least one selected from the group consisting of alkylsilane, alkyltrialkoxysilane, alkoxysilane, aminoalkyltrialkoxysilane, and mercaptoalkylalkoxysilane. One compound can be used. The chamber surface may be the entire surface of the chamber or at least one or more surfaces of the chamber.

In one embodiment, the organic compound monomer is vacuum deposited on the surface of the chamber by CVD vacuum deposition through the CVD chamber (S120).

Thereafter, the pretreated chamber is subjected to PI coating (polyimide coating) by CVD vacuum deposition through the CVD chamber. At this time, when the PI coating layer (or the PI coating film / insulation coating film) is formed, the PI coating layer may be formed on the pretreated chamber not only by the CVD vacuum deposition but also by a spray method or a wetting method It is possible.

That is, polyimide (PI) is vacuum vapor deposited on the entire surface of the pretreated chamber or on at least one or more surfaces of the chamber through the CVD chamber.

For example, the PI coating layer is formed on the preprocessed chamber (S130).

Thereafter, the chamber in which the PI coating layer is formed is subjected to NIX coating (or dimmer) by CVD vacuum deposition. The dimers used in the nick coating include poly (para-xylene), poly (chloro-para-xylylene), poly (di-chloro-para-xylylene ) And poly (tetrafluoro- [2,2] para-Xylylene)), and the like. In addition, the thickness of the knuckle coating layer (or the knuckle coating layer) formed by the knuck coating may be in a range of about 1 to 70 mu m, and may be variously set according to the designer's design in consideration of the use of the chamber have.

That is, when the solid-state dimer is installed in a vaporizer (not shown) and the pressure is adjusted to a predetermined level (for example, about 1 Torr) and heated to a predetermined temperature (for example, 170 ° C to 200 ° C) , The solid-state dimer is vaporized and dimer gas is generated.

Then, the vaporized dimer gas is decomposed into monomers by passing through a pyrolysis (not shown) maintained at 650 ° C to 700 ° C and a pressure of 0.5 Torr.

The thermally decomposed monomer is then deposited (or laminated / condensed) in a polymer state on the chamber surface where the PI coating layer is formed (or deposited) in the CVD chamber controlled at 10 mTorr to 100 mTorr pressure at room temperature, (Or a Knicks coating / Knicks polymer / Knicks coating film) is formed.

For example, the nick coating layer is formed on the PI coating layer.

As described above, since the coating of the nicks polymer (or the paraline polymer) is performed at room temperature or vacuum, it is possible to prevent the deformation of the base material due to thermal stress and uniformly coat not only the side surface of the base material but also the fine uneven portion .

In addition, by the nick coating, the chemical resistance, heat resistance and water resistance can be improved (S140).

In the above-described embodiments, the PI coating layer and the Nicks coating layer are sequentially formed in the chamber, but the Knicks coating layer may not be formed.

That is, the PI coating layer may be formed on the chamber.

Hereinafter, a knock and PI coating method according to the second embodiment of the present invention will be described.

First, a cleaning process (or a vacuum cleaning process) is performed to remove contaminants on the surface of the chamber. Here, the cleaning process may be performed through a cleaning agent such as alcohol, or ultrasonic cleaning may be performed through isopropyl alcohol or the like.

For example, the chamber may be formed of a nonmetal-based material or a metal-based material. Here, the non-metallic material may be glass, ceramic, acrylic, Teflon, PVC, or the like. The metallic material may be aluminum, stainless steel, or the like (S210).

The organic compound monomer is then vacuum vapor deposited (or CVD vacuum deposited) onto the chamber (or at least a part of the surface of the chamber) by a pretreatment process / operation (or primer) through a CVD chamber (not shown) do.

That is, in the CVD chamber in which the chamber is accommodated, at least one liquid organic compound monomer is injected into the CVD chamber in a gaseous state, and is deposited on the chamber surface at 10 mTorr to 100 mTorr.

The organic compound monomer may be at least one compound selected from among alkylsilane, alkyltrialkoxysilane, alkoxysilane, aminoalkyltrialkoxysilane, and mercaptoalkylalkoxysilane. The chamber surface may be the entire surface of the chamber or at least one or more surfaces of the chamber.

In one embodiment, the organic compound monomer is vacuum deposited on the surface of the chamber by CVD vacuum deposition through the CVD chamber (S220).

Thereafter, the pretreated chamber is NIX coated (or diminished) by CVD vacuum deposition. At this time, at least one dimer may be used among the dimers used in the nick coating, such as paralin N, paralin C, paralin D, and paralin F. The thickness of the knuckle coating layer (or the knuckle coating layer) formed by the knuckle coating may be in the range of about 1 μm to 70 μm. The thickness of the knuckle coating layer may be variously set according to designers' .

That is, when the solid-state dimer is installed in an evaporator (not shown) and the pressure is adjusted to a predetermined level (for example, about 1 Torr) and heated to a predetermined temperature (for example, 170 ° C to 200 ° C) The solid-phase dimer is vaporized and dimer gas is generated.

Thereafter, the vaporized dimer gas is decomposed into monomers by passing through a pyrolyzer (not shown) maintained at 650 ° C to 700 ° C and a pressure of 0.5 Torr. Thereafter, the pyrolyzed monomer is deposited (or laminated / condensed) in a polymer state on the surface of the chamber on which the organic compound monomer is deposited in the CVD chamber adjusted to a pressure of 10 mTorr to 100 mTorr at room temperature, (Or Knicks coating / Knicks polymer / Knicks coating film).

For example, the nitric oxide coating layer is formed on the pre-processed chamber (S230).

Thereafter, the chamber in which the Knicks coating layer is formed is PI-coated by CVD vacuum deposition through the CVD chamber.

At this time, when forming the PI coating layer (or the PI coating layer), the PI coating layer may be formed in the chamber in which the nickle coating layer is formed through the spraying method, the wetting method, or the like as well as the CVD vacuum deposition.

That is, polyimide (PI) is vacuum vapor deposited on the entire surface or at least one part of the surface of the chamber in which the nickle coating layer is formed through the CVD chamber.

For example, the PI coating layer is formed on the Knicks coating layer (S240).

As described above, the embodiments of the present invention can improve the chemical resistance, heat resistance, and water resistance of a chamber by performing a NIX and / or PI coating process (or a dimer process) .

Also, as described above, the embodiments of the present invention can be achieved by forming a nick coating layer and / or a PI coating layer on an arbitrary part by CVD vacuum deposition to form a uniform coating layer, a low friction coefficient, an uninterruptible characteristic, (For example, characteristics that are not affected by physical changes such as shrinkage, swelling, and refraction), semi-permanent usage characteristics, and the like, and the reliability of the product can be improved.

Thus, as described above, the chamber in which the nit coating layer or the PI coating layer is formed can be installed and used in a space where the corrosive fluid is used.

Here, since the scrubber device forms a liquid film, a droplet, and the like, and is contacted with a corrosive gas or a corrosive liquid because it is an apparatus for purifying the contaminated gas by contact with the dust gas, Corrosion can be suppressed.

Particularly, since the nit coating layer or the PI coating layer is coated on the surface of the chamber through vapor deposition, a narrow space such as an edge can be coated uniformly and defects on the coated surface can be minimized.

Meanwhile, in the present embodiment, the coating is performed through at least one of the nick coating and the PI coating. However, a Teflon coating may be mixed with the raw material for the nick coating.

It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined in the appended claims. It will be possible.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It is to be understood that the invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive.

Claims (3)

A chamber for a scrubber device,
An organic compound monomer vapor-deposited on the surface of the chamber for the scrubber apparatus through a CVD chamber;
A polyimide-coated polyimide coating layer on the chamber surface for the deposited scrubber device by CVD vacuum deposition; And
A nickle coating layer formed on the surface of the polyimide coating layer by a CVD vacuum deposition.
A chamber for a scrubber device,
An organic compound monomer vapor-deposited on the surface of the chamber for the scrubber apparatus through a CVD chamber;
A nitric-coated knuckle coating layer on the chamber surface for the deposited scrubber device by CVD vacuum deposition; And
A polyimide-coated polyimide coating layer on the surface of the nickle coating layer formed by CVD vacuum deposition.
The method according to claim 1 or 2,
Wherein the organic compound monomer is at least one compound selected from alkylsilane, alkyltrialkoxysilane, alkoxysilane, aminoalkyltrialkoxysilane and mercaptoalkylalkoxysilane.

Images