KR20150044548A - Wire Grid Polarizer and Method for Preparing the Same - Google Patents

Wire Grid Polarizer and Method for Preparing the Same Download PDF

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Publication number
KR20150044548A
KR20150044548A KR20130123726A KR20130123726A KR20150044548A KR 20150044548 A KR20150044548 A KR 20150044548A KR 20130123726 A KR20130123726 A KR 20130123726A KR 20130123726 A KR20130123726 A KR 20130123726A KR 20150044548 A KR20150044548 A KR 20150044548A
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KR
South Korea
Prior art keywords
resin
pattern
metal nanoparticles
grid polarizer
curable resin
Prior art date
Application number
KR20130123726A
Other languages
Korean (ko)
Inventor
남시욱
김경종
황홍구
김경화
Original Assignee
코오롱인더스트리 주식회사
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Priority to KR20130123726A priority Critical patent/KR20150044548A/en
Publication of KR20150044548A publication Critical patent/KR20150044548A/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/24Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/02Elements
    • C08K3/08Metals
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/30Polarising elements
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00Specific properties of additives
    • C08K2201/002Physical properties
    • C08K2201/005Additives being defined by their particle size in general
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00Specific properties of additives
    • C08K2201/011Nanostructured additives

Abstract

The present invention relates to a wire grid polarizer and method for preparing the same, more particularly a wire grid polarizer and method for preparing the same that reduces costs and that is applicable to the large area, continuous production and roll-to-roll process by using the composition of curable resin and metallic nano particles when the grid pattern formed.

Description

Technical Field [0001] The present invention relates to a wire grid polarizer,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire grid polarizer used in a liquid crystal display (LCD) and a manufacturing method thereof.

Currently, polarizing plates mainly used are polarizing plates using absorbing polarizing films and nanowire grid polarizing plates.

The polarizing plate using the absorption type polarizing film transmits only 50% of incident light. On the other hand, the nanowire grid polarizer transmits light perpendicular to the axis of the nanowire grid polarizer in incident light, reflects light parallel to the axis of the nanowire grid polarizer, and repeats this process to improve light transmittance. At this time, the pitch of the nanoparticles of the nanowire grid polarizer becomes half the wavelength of the visible light ray to be incident. Therefore, since the wavelength of the visible light ray is 400 to 700 nm, the pitch of the nano pattern is 200 nm or less.

Meanwhile, a conventional method of manufacturing a nanowire grid polarizer requires two etching processes as shown in FIG. Specifically, a UV-curable resin film or a thermosetting resin film is formed on a film or a glass substrate, and then a pattern is formed on the resin film by using a flexible mold (b), a metal layer is deposited on the resin pattern (c) (D) after the formation of nanopatterns on the metal layer through the etching process, and (e) nanowire grid polarizers were fabricated through another etching process.

However, in the conventional method of manufacturing a nanowire grid polarizer, if the process parameters are not precisely controlled in the etching process of a nano pattern, the uniformity of the etching becomes poor and a nano pattern having a uniform size can not be formed. none. In order to solve such problems, a method of forming a nanowire grid polarizer by using a nano metal paste and a spin coating method has been proposed. However, this method requires a lot of nano metal paste and is difficult to apply in a large area have.

The present invention provides a wire grid polarizer in which a pattern imparted with reflection and polarization functions is formed by a simplified process and a method of manufacturing the wire grid polarizer.

Accordingly, the present invention provides, as a first preferred embodiment, a substrate layer; And a pattern layer formed on the base layer and having a lattice pattern, wherein the lattice pattern is formed of a mixed resin including a curable resin and metal nanoparticles.

The metal nanoparticles according to the embodiment may be dispersed in the curable resin, or may be melted and mixed with the curable resin.

The curable resin according to this embodiment is a resin which is selected from the group consisting of an acrylic resin, a methacrylic resin, a polyvinyl resin, a polyester resin, a styrene resin, an alkyd resin, an amino resin, a polyurethane resin, It may be more than species.

The metal nanoparticles according to the above embodiments may have a particle size of 100 nm or less.

The metal nanoparticles according to the embodiment may be selected from the group consisting of aluminum, copper, chromium, platinum, gold, silver, nickel, and alloys thereof.

The grid pattern according to this embodiment may be formed of a mixed resin containing 10 to 90% by weight of a curable resin and 10 to 90% by weight of metal nanoparticles.

The grid pattern according to the embodiment may have a height of 10 to 300 nm and a pitch of 10 to 200 nm.

According to a second preferred embodiment of the present invention, there is also provided a method of manufacturing a semiconductor device, comprising the steps of: (S1) applying a mixed resin including a curable resin and metal nano-particles to an upper surface of a base layer; And (S2) forming a grid pattern on the resin film formed in the step (S1).

The step S2 according to this embodiment may be to form a lattice pattern using a stamp or a pattern roll with a grating pattern engraved.

The method of manufacturing the wire grid polarizer according to the above embodiment may further include the step of etching the remaining resin in the concave portion of the lattice pattern formed in the step (S2) after the step (S2) have.

According to the present invention, by using a resin in which metal nanoparticles are dispersed in a curable resin at the time of forming a grid pattern included in the wire grid polarizer, the wire grid polarizer production process can be simplified, It is possible to show effects such as applicability to the roll-to-roll process and cost reduction.

FIG. 1 schematically shows a manufacturing process of a wire grid polarizer according to the prior art.
FIG. 2 shows the shape of a grid pattern included in the wire grid polarizer according to the present invention.
FIG. 3 schematically shows a manufacturing process of a wire grid polarizer according to the present invention.

Hereinafter, the present invention will be described in more detail.

The present invention relates to a substrate layer (10); And a pattern layer (20) formed on the base layer and having a lattice pattern formed thereon, wherein the lattice pattern is formed of a resin in which metal nanoparticles are dispersed in a curable resin (Fig. 2).

The present invention also provides a method for manufacturing a semiconductor device, comprising the steps of: (S1) applying a mixed resin including a curable resin and metal nanoparticles to an upper surface of a base layer; And (S2) forming a grid pattern on the resin film formed in the step (S1) (Fig. 3).

In the present invention, the wire grid polarizer means a polarizer having a grid pattern formed thereon.

[Pattern layer]

The pattern layer may be formed of a mixed resin containing 10 to 90% by weight of a curable resin and 10 to 90% by weight of metal nanoparticles. When the content of the metal nanoparticles is less than 10% by weight, If the amount is more than 90% by weight, there is a problem in dispersibility and patterning due to particle aggregation.

The metal nanoparticles may be dispersed in the curable resin or may be melted and mixed with the curable resin. The metal nanoparticles may be composed of aluminum, copper, chromium, platinum, gold, silver, . ≪ / RTI >

The metal nanoparticles may have a particle size of 100 nm or less, and when the particle diameter of the metal nanoparticles is more than 100 nm, the particle size is excessively large to cause a problem in patterning. The particle diameter of the metal nanoparticles is preferably 1 to 100 nm .

On the other hand, in the curable resin, the curable resin is selected from the group consisting of an acrylic resin, a methacrylic resin, a polyvinyl resin, a polyester resin, a styrene resin, an alkyd resin, an amino resin, a polyurethane resin and a silicone resin It may be more than one species.

The lattice pattern formed on the pattern layer may have a height (h) of 10 to 500 nm and a pitch (p) of 10 to 200 nm.

If the height of the lattice pattern is less than 10 nm, the polarization efficiency may be deteriorated. If the height of the lattice pattern is more than 500 nm, there is a problem in patterning and pattern durability.

If the pitch of the lattice pattern is less than 10 nm, the etching process is difficult. If the pitch is more than 200 nm, there is a problem in the polarization efficiency.

[Base layer]

In the present invention, the base layer may be a transparent film or a glass film, and specifically, the transparent film may be a polyethylene terephthalate film; Polycarbonate film; Polypropylene film; Polyethylene film; Polystyrene film; Polyepoxy films; A cyclic olefin polymer (COP) film; A cyclic olefin-based copolymer (COC) film; A copolymer film of a polycarbonate resin and a cyclic olefin polymer; And a copolymer film of a polycarbonate-based resin and a cyclic olefin-based copolymer.

The thickness of the base layer may be in the range of 10 to 1000 탆, more preferably in the range of 15 to 400 탆, in order to make the thickness of the base layer favorable in terms of mechanical strength, thermal stability and flexibility and to prevent loss of transmitted light.

INDUSTRIAL APPLICABILITY As described above, the present invention makes it possible to produce a wire grid polarizer in which a grating pattern imparted with reflection and polarization functions is formed by a simplified process by using a resin in which metal nanoparticles are dispersed in a curable resin.

In addition, this makes it possible to realize the large-area, continuous production, roll-to-roll process applicability and cost reduction of the wire grid polarizer.

Hereinafter, the present invention will be described in more detail with reference to Examples, but the scope of the present invention is not limited to the following Examples.

Example 1

As the base layer, a polyethylene terephthalate film having a thickness of 188 占 퐉 was prepared.

On the upper surface of the substrate layer, a resin for forming a pattern layer was applied to form a resin film. At this time, the resin for forming a pattern layer is obtained by dispersing 30 wt% of AG nanoparticles in 70 wt% of silicone resin.

The stamp having the lattice pattern formed thereon was closely contacted and ultraviolet rays (Fusion, 300 Watt / inch 2) were irradiated to the base layer to cure the resin film, thereby forming a lattice pattern including concave portions and convex portions in the resin film.

Thereafter, the resin remaining in the concave portion of the lattice pattern was etched to produce a wire grid polarizer. At this time, the grid pattern has a height of 150 nm and a pitch of 140 nm.

Examples 2 and 3

A wire grid polarizer was prepared in the same manner as in Example 1, except that the content of the metal nanoparticles was changed as shown in Table 1.

Comparative Example 1

As the base layer, a polyethylene terephthalate film having a thickness of 188 占 퐉 was prepared.

On the upper surface of the substrate layer, a resin for forming a pattern layer was applied to form a resin film. At this time, the pattern layer forming resin used was a silicone acrylate as a curing resin.

A grid pattern was formed on the resin film using a flexible mold having a grating pattern formed therein.

AL metal was deposited on the grid pattern.

Thereafter, the deposited metal was etched to form a metal grid pattern, and another wire grid polarizer was prepared by etching again to remove the remaining metal.

compare Example 2 and compare Example 3

A wire grid polarizer was prepared in the same manner as in Example 1, except that the content of the metal nanoparticles was changed as shown in Table 1.

Polarization efficiencies of the wire grid polarizers prepared in Examples and Comparative Examples were measured by the following methods, and the results are shown in Table 2.

 (1) Polarization efficiency (%)

The wire grid polarizer prepared in Examples and Comparative Examples was cut into 50 mm x 50 mm and placed between the polarizer and the analyzer. The reference wavelength was set to 550 nm with a polarization meter (Model: RETS-100, Japan Otsuka) And the polarization efficiency was measured.

Curable resin Metal nanoparticles Grid pattern Polarization efficiency
(%)
designation content
(%)
designation content
(%)
Diameter (nm) Height
(nm)
pitch
(nm)
Example 1 silicon 70 Ag 30 30 150 140 90 Example 2 silicon 90 Ag 10 30 150 140 80 Example 3 silicon 10 Ag 90 30 150 140 86 Comparative Example 1 Silicone acrylate AL deposition
(Height 150 nm)
150 140 85
Comparative Example 2 silicon 99.5 Ag 0.5 30 150 140 10 Comparative Example 3 silicon 5 Ag 95 30 150 140 20 (Patterning
Difficulty)

As a result of measurement of physical properties, as shown in Table 1, when the content of the metal nanoparticles is less than the proper amount, the polarization efficiency is lowered (Comparative Example 2), and when the content of the metal nanoparticles is more than the proper amount, And patterning is difficult (Comparative Example 3).

In the case of the comparative example 1, the polarization efficiency is similar to that of the embodiment, but since the resin film is formed of a curable resin, the metal must be separately deposited and etched, which makes the process difficult.

10: substrate layer, 20: pattern layer
h: height of pattern, p: pitch of pattern

Claims (10)

A base layer; And a pattern layer formed on the base layer and having a lattice pattern formed thereon,
Wherein the grid pattern is formed of a mixed resin including a curable resin and metal nanoparticles.
The method according to claim 1,
Wherein the metal nanoparticles are dispersed in the curable resin or melted and mixed with the curable resin.
3. The method of claim 2,
The curable resin is at least one selected from the group consisting of an acrylic resin, a methacrylic resin, a polyvinyl resin, a polyester resin, a styrene resin, an alkyd resin, an amino resin, a polyurethane resin and a silicone resin The wire grid polarizer.
The method according to claim 1,
Wherein the metal nanoparticles have a particle diameter of 100 nm or less.
The method according to claim 1,
Wherein the metal nanoparticles are selected from the group consisting of aluminum, copper, chromium, platinum, gold, silver, nickel, and alloys thereof. Wire grid polarizer.
The method according to claim 1,
Wherein the grid pattern is formed of a mixed resin containing 10 to 90% by weight of a curable resin and 10 to 90% by weight of metal nanoparticles.
The method according to claim 1,
Wherein the grid pattern has a height of 10 to 300 nm and a pitch of 10 to 200 nm.
(S1) applying a mixed resin including a curable resin and metal nanoparticles to an upper surface of a base layer; And
(S2) forming a grid pattern on the resin film formed in the step (S1).
9. The method of claim 8,
Wherein the step (S2) is to form a grid pattern using a stamp or a pattern roll with a grid pattern tangent.
9. The method of claim 8,
Further comprising the step of etching the remaining resin in the concave portion of the lattice pattern formed in the step (S2) after the step (S2).
KR20130123726A 2013-10-17 2013-10-17 Wire Grid Polarizer and Method for Preparing the Same KR20150044548A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112068235A (en) * 2020-09-09 2020-12-11 Oppo广东移动通信有限公司 Preparation method, metal wire grating polaroid, display device and electronic equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112068235A (en) * 2020-09-09 2020-12-11 Oppo广东移动通信有限公司 Preparation method, metal wire grating polaroid, display device and electronic equipment

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