KR20150038806A - Optical shutter - Google Patents

Optical shutter Download PDF

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Publication number
KR20150038806A
KR20150038806A KR20130116429A KR20130116429A KR20150038806A KR 20150038806 A KR20150038806 A KR 20150038806A KR 20130116429 A KR20130116429 A KR 20130116429A KR 20130116429 A KR20130116429 A KR 20130116429A KR 20150038806 A KR20150038806 A KR 20150038806A
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KR
South Korea
Prior art keywords
gate electrode
reservoir
hole
optical shutter
light shielding
Prior art date
Application number
KR20130116429A
Other languages
Korean (ko)
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KR102050452B1 (en
Inventor
성미린
이문선
Original Assignee
엘지디스플레이 주식회사
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Priority to KR1020130116429A priority Critical patent/KR102050452B1/en
Publication of KR20150038806A publication Critical patent/KR20150038806A/en
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Publication of KR102050452B1 publication Critical patent/KR102050452B1/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/02—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
    • G02B26/04—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light by periodically varying the intensity of light, e.g. using choppers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/35—Optical coupling means having switching means
    • G02B6/351—Optical coupling means having switching means involving stationary waveguides with moving interposed optical elements
    • G02B6/353—Optical coupling means having switching means involving stationary waveguides with moving interposed optical elements the optical element being a shutter, baffle, beam dump or opaque element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/0305—Constructional arrangements
    • G02F1/0316—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars

Abstract

The present invention relates to an optical shutter with an improved performance in which the edge of a hole formed on a reservoir and the edge of a gate electrode are matched such that an electric field of the gate electrode can be distributed evenly, the optical shutter comprising: upper and lower substrates which have the edges thereof facing-coupled to each other through a spacer; a plurality of gate electrodes formed on the lower substrate and spaced apart to have a set interval; an insulating film formed to cover a plurality of gate electrodes; a reservoir formed on the insulating film and including holes matched with the edges of a plurality of gate electrodes; a common electrode formed on the front surface of the upper substrate; and a plurality of light-blocking particles arranged inside the upper and lower substrates.

Description

Optical Shutter {OPTICAL SHUTTER}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical shutter, and relates to an optical shutter in which a uniform electric field is formed and transmittance and driving stability are improved.

The optical shutters include light shielding particles charged between two substrates provided with electrodes. The light shutter can be used as a light shielding plate of a transparent organic light emitting diode display device. Instead of controlling the light shielding particles according to a signal applied to the thin film transistor, the light shielding particles can be controlled by using a potential difference between the upper and lower substrates. Therefore, it has higher optical efficiency and lower power consumption than conventional optical shutters.

FIG. 1A is a plan view of a lower substrate of a general optical shutter, and FIG. 1B is a cross-sectional view taken along line I-I 'of FIG. 1A. 2 is a photograph of a general optical shutter.

1A and 1B, a plurality of gate electrodes 11a are formed on a lower substrate 10a of a general optical shutter so as to be spaced apart from each other by a predetermined distance, and an insulating film 12 is formed to cover the gate electrode 11a . A reservoir 13 including a hole 13H exposing the insulating film 12 in the region corresponding to the gate electrode 11a is formed.

When a high positive voltage is applied to the gate electrode 11a, the light-shielding particles gather at the gate electrode 11a and fill the hole 13H of the reservoir 13. As a result, it functions as a transmission mode in which light is transmitted in a region excluding the gate electrode 11a.

Although not shown, a common electrode (not shown) is formed on a front surface of an upper substrate (not shown) bonded to the lower substrate 10a. The common electrode (not shown) is generally grounded. Therefore, when a low negative voltage is applied to the gate electrode 11a, the light shielding particles move toward the common electrode (not shown), blocking the light and functioning in the blocking mode.

By the way, as shown, the width of the hole (13H) of the reservoir (13) (W 2), a gate electrode (11a) a width (W a) than large, and the edge of the reservoir 13, a gate electrode (11a in ). ≪ / RTI > Therefore, when a voltage is applied to the gate electrode 11a, the intensity of the electric field at the edge of the gate electrode 11a is greater than the intensity of the electric field inside the gate electrode 11a, and the electric field distribution of the gate electrode 11a is uneven do. As a result, there arises a problem that light-shielding particles are agglomerated and light-shielding particle control becomes difficult.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and it is an object of the present invention to provide an optical shutter in which the edge of the reservoir is aligned with the edge of the gate electrode, and the distribution of the magnetic field of the gate electrode is made uniform,

According to an aspect of the present invention, there is provided an optical shutter comprising: a lower substrate and an upper substrate, the edges of which are joined together through a spacer; A plurality of gate electrodes formed on the lower substrate and spaced apart at regular intervals; An insulating film formed to cover the gate electrode; A reservoir formed on the insulating film and including a hole coinciding with an edge of the gate electrode; A common electrode formed on the front surface of the upper substrate; And a plurality of light shielding particles provided in the lower substrate and the upper substrate.

The width of the gate electrode and the hole are the same.

The width of the gate electrode and the hole is 6.5 mu m to 7.5 mu m.

The side surface of the hole has a slope of 80 DEG to 85 DEG with respect to the lower substrate.

The thickness of the reservoir is 2.5 mu m to 3 mu m.

The plurality of light shielding particles are dispersed in a non-polar solvent.

The plurality of light shielding particles move toward the common electrode when a negative voltage is applied to the gate electrode.

When a positive voltage is applied to the gate electrode, the plurality of light shielding particles move toward the gate electrode and fill the hole.

The mass percentage of the plurality of light shielding particles is 1 wt%.

The optical shutter of the present invention has the following effects.

First, the edge of the hole formed in the reservoir coincides with the edge of the gate electrode, so that the electric field distribution of the gate electrode becomes uniform.

Secondly, it is possible to improve the driving stability by preventing the light shielding particles from aggregating at the edge of the gate electrode, and to improve the transmissivity in the transmissive mode.

1A is a plan view of a lower substrate of a general optical shutter.
1B is a cross-sectional view taken along line I-I 'of FIG. 1A.
2 is a photograph of a general optical shutter.
3 is a sectional view of the optical shutter of the present invention.
4 is an enlarged view of the area A in Fig.
5 is a sectional view of an optical shutter according to the present invention, showing a transmission mode.
6A is an electric field simulation of a general optical shutter.
6B is an electric field simulation of the optical shutter of the present invention.

Hereinafter, an optical shutter according to the present invention will be described in detail with reference to the accompanying drawings.

Fig. 3 is a sectional view of the optical shutter of the present invention, and Fig. 4 is an enlarged view of area A of Fig. 5 is a sectional view of an optical shutter according to the present invention, showing a transmission mode.

3, the optical shutter of the present invention includes a lower substrate 110a, an upper substrate 110b, a lower substrate 110a, and an upper substrate 110b in which edges of the spacer 114 are bonded to each other, A plurality of gate electrodes 111a formed on the lower substrate 110a spaced apart at a predetermined distance from each other, an insulating film 112 formed so as to cover the gate electrode 111a, And a common electrode 111b formed on the upper substrate 110b.

Specifically, the gate electrode 111a is formed of a metal such as an aluminum-based metal (Al, AlNd), copper (Cu), titanium (Ti), molybdenum (Mo), tungsten (W), or the like and is subjected to a photolithography process and an etching process . The insulating film 112 is formed of an inorganic material such as silicon (SiOx) or silicon nitride (SiNx) to cover the gate electrode 111a.

The reservoir 113 is formed of an organic material, and is preferably formed of a negative photoresist. At this time, the reservoir 113 includes holes (113H in Fig. 4) for exposing the insulating film 112 in the region corresponding to the gate electrode 111a, and when the optical shutter is driven in the transmission mode, The particles 115 are filled in holes (113H in Fig. 4).

However, as described above, in general optical shutters, the width of the holes of the reservoir is larger than the width of the gate electrodes, and the edge of the reservoir is not overlapped with the edge of the gate electrode. Therefore, when a voltage is applied to the gate electrode, the intensity of the electric field at the edge of the gate electrode is greater than the intensity of the electric field inside the gate electrode, and the electric field distribution of the gate electrode becomes uneven. As a result, there arises a problem that light-shielding particles are agglomerated and light-shielding particle control becomes difficult.

In order to prevent this, the optical shutter of the present invention is formed so that the width of the gate electrode 111a and the width of the hole of the reservoir 113 (113H in FIG. 4) are the same. Therefore, the edge of the reservoir 113 is aligned with the edge of the gate electrode 111a, so that the electric field strongly concentrated on the edge of the gate electrode 111a is evenly distributed. Therefore, when the shielding particle 115 is filled in the hole 113H of the reservoir 113 to function as the transmission mode, the control of the shielding particle 115 at the edge of the hole (113H in FIG. 4) The driving stability can be improved, and the transmittance can be improved in the transmission mode.

In particular, when the slope of the side surface of the reservoir 113 is too small, the light-shielding particles 115 filled in the holes (113H in Fig. 4) The transmittance decreases and the driving stability may be lowered. When the side surface of the reservoir 113 is 90 DEG or more, the light shielding particles 115 are hardly filled into the holes (113H in FIG. 4).

Therefore, it is preferable that the side surface of the reservoir 113 is formed to have a proper inclination. As shown in FIG. 4, the angle θ between the side surface of the reservoir 113 and the lower substrate 110a is 80 ° to 85 °.

Further, when the thickness D of the reservoir 113 is too thin, the light shielding particles 115 can not be sufficiently filled in the holes 113H. Since the reservoir 113 is formed of a negative photoresist as described above, patterning is difficult if the thickness is too large. Therefore, it is preferable that the thickness of the reservoir 113 is 2.5 占 퐉 to 3 占 퐉.

The plurality of light shielding particles 115 filled between the lower substrate 110a and the upper substrate 110b are dispersed in a nonpolar solvent, specifically a nonpolar organic solvent. The mass percentage of the plurality of light shielding particles 115 is 1 wt% . Therefore, in order to contain 1 wt% of the light-shielding particles 115 in the hole 113H of the reservoir 113 having a thickness of 2.5 to 3 mu m, the width of the hole 113H of the reservoir 113 is preferably 6.5 mu m to 7 mu m, 5 mu m, specifically, 7 mu m.

Therefore, the width of the gate electrode of a general optical shutter is about 5 占 퐉, while the width of the gate electrode 111a of the optical shutter of the present invention is 6.5 占 퐉 to 7,5 占 퐉. Thus, since the edges of the gate electrode 111a are not exposed by the reservoir 113, the electric field distribution becomes uniform as compared with the prior art.

In general, in the optical shutter of the present invention as described above, the transmittance decreases in the transmission mode as the width of the gate electrode 111a formed of opaque metal increases. Conversely, the smaller the width of the gate electrode 111a, the higher the transmittance. However, in order to fill the hole with the light-shielding particles 115 of 1 wt%, the thickness of the reservoir 113 must be increased. Therefore, even if the width of the gate electrode 111a is made wide to match the edge of the gate electrode 111a and the edge of the hole 113H as in the present invention, the thickness of the reservoir 113 and the thickness of the hole 113H ), It is possible to improve the transmittance.

A common electrode 111b is formed on the front surface of the upper substrate 110b. The common electrode 111b may be formed of a material such as tin oxide (TO), indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide Is formed of the same transparent conductive material. The common electrode 111b is grounded, and a driving voltage of about -5V to 30V is applied to the gate electrode 111a.

Accordingly, a potential difference occurs between the upper and lower substrates 100b and 100a according to the driving voltage applied to the gate electrode 111a, and thus the light shielding particles 115 move. For example, when a low negative voltage is applied to the gate electrode 111a, the light shielding particles 115 move toward the common electrode 111b. Therefore, the light is blocked by the light shielding particles 115, and the optical shutter functions in the blocking mode.

Conversely, when a high positive voltage is applied to the gate electrode 111a as shown in Fig. 5, the light shielding particles 115 are filled in the holes (113H in Fig. 4) of the reservoir 113. [ Thus, it functions as a transmission mode in which light is transmitted in an area excluding the gate electrode 111a.

6A is an electric field simulation of a general optical shutter, and FIG. 6B is an electric field simulation of an optical shutter of the present invention.

As shown in FIG. 6A, a general optical shutter has a structure in which the edge of the gate electrode is exposed. In this case, a strong electric field is generated at the edge of the gate electrode. Therefore, the electric field inside the hole is not uniform, so that the light shielding particles are agglomerated at the edge of the gate electrode, making it difficult to control the particle. However, as shown in FIG. 6B, the edge of the hole formed in the reservoir and the edge of the gate electrode coincide with each other in the optical shutter of the present invention, so that the electric field inside the hole becomes uniform. This prevents the light shielding particles from aggregating at the edge of the gate electrode, thereby improving the driving stability and improving the transmissivity in the transmissive mode.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Will be clear to those who have knowledge of.

110a: lower substrate 110b: upper substrate
111a: gate electrode 111b: common electrode
112: insulating film 113:
113H: hole 114: spacer
115: Shading particles

Claims (9)

A lower substrate and an upper substrate, the edges of which are joined together through spacers;
A plurality of gate electrodes formed on the lower substrate and spaced apart at regular intervals;
An insulating film formed to cover the gate electrode;
A reservoir formed on the insulating film and including a hole coinciding with an edge of the gate electrode;
A common electrode formed on the front surface of the upper substrate; And
And a plurality of light shielding particles provided inside the lower substrate and the upper substrate. The method according to claim 1,
Wherein the gate electrode and the hole have the same width. 3. The method of claim 2,
And the width of the gate electrode and the hole is 6.5 占 퐉 to 7.5 占 퐉. The method according to claim 1,
And a side surface of the hole has a slope of 80 DEG to 85 DEG with respect to the lower substrate. The method according to claim 1,
Wherein the reservoir has a thickness of 2.5 mu m to 3 mu m. The method according to claim 1,
Wherein the plurality of light shielding particles are charged and have a structure dispersed in a non-polar solvent. The method according to claim 6,
Wherein the plurality of light shielding particles move toward the common electrode when a negative voltage is applied to the gate electrode. The method according to claim 6,
Wherein the plurality of light shielding particles move toward the gate electrode and are filled in the hole when a positive voltage is applied to the gate electrode. The method according to claim 6,
And the percentage of mass of the plurality of light shielding particles is 1 wt%.
KR1020130116429A 2013-09-30 2013-09-30 Optical shutter KR102050452B1 (en)

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KR102050452B1 KR102050452B1 (en) 2019-12-02

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210405496A1 (en) * 2019-03-20 2021-12-30 Beijing Boe Optoelectronics Technology Co., Ltd. Display panel, control methods thereof, and display device
US11914262B2 (en) 2020-06-11 2024-02-27 Lg Display Co., Ltd. Light shutter panel and transparent display apparatus having the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090022693A (en) * 2007-08-31 2009-03-04 삼성전자주식회사 Thin film transistor array panel and fabricating method thereof, and flat panel display with the same
KR20100077096A (en) * 2008-12-27 2010-07-07 엘지디스플레이 주식회사 Electrophoretic display device and method for manufacturing the same
KR20130021601A (en) * 2011-08-23 2013-03-06 엘지디스플레이 주식회사 Electrophoretic display device and method of driving the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090022693A (en) * 2007-08-31 2009-03-04 삼성전자주식회사 Thin film transistor array panel and fabricating method thereof, and flat panel display with the same
KR20100077096A (en) * 2008-12-27 2010-07-07 엘지디스플레이 주식회사 Electrophoretic display device and method for manufacturing the same
KR20130021601A (en) * 2011-08-23 2013-03-06 엘지디스플레이 주식회사 Electrophoretic display device and method of driving the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210405496A1 (en) * 2019-03-20 2021-12-30 Beijing Boe Optoelectronics Technology Co., Ltd. Display panel, control methods thereof, and display device
US11822203B2 (en) * 2019-03-20 2023-11-21 Beijing Boe Optoelectronics Technology Co., Ltd. Display panel, control methods thereof, and display device
US11914262B2 (en) 2020-06-11 2024-02-27 Lg Display Co., Ltd. Light shutter panel and transparent display apparatus having the same

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