KR20150031100A - Organic light emitting display device and manufacturing method thereof - Google Patents

Abstract

The purpose of the present invention is to provide an organic light emitting display device capable of simply forming the pattern of a cathode that is an upper electrode, and a manufacturing method thereof. The present invention relates to an organic light emitting display device and a manufacturing method thereof. The organic light emitting display device includes: a plurality of pixels having a first region where light is emitted in a first direction and a second region where light is emitted in a second direction opposite to the first direction, respectively; a plurality of first electrodes disposed in the first region of each pixel; a plurality of second electrodes disposed in the second region of each pixel; an interlayer disposed on the first electrodes and the second electrodes, and including an organic light emitting layer; a third electrode formed on the interlayer, and positioned in the first region and the second region; a first auxiliary layer positioned in the first region on the third electrode; a second auxiliary layer positioned in the second region on the third electrode; and a fourth electrode positioned in the first region on the second auxiliary layer.

Description

[0001] The present invention relates to an organic light emitting display device and a manufacturing method thereof,

To an organic light emitting display and a method of manufacturing the same.

The organic light emitting display device is a self-luminous display that can emit light by electrically exciting an organic compound, can be driven at a low voltage, is easy to be thinned, and solves the drawbacks pointed out as problems in a liquid crystal display device such as a wide viewing angle and a fast response speed It is attracting attention as a next-generation display capable.

The organic light emitting display device can realize both-side light emission as compared with the liquid crystal display device. However, in order to simultaneously realize the front emission and the back emission, the cathode reflection electrode of the back emission unit must be patterned. However, in the patterning process of the cathode reflection electrode formed on the organic emission layer, a fine metal mask There is a limit to the difficulty.

An organic light emitting display device capable of easily forming a pattern of a cathode, which is an upper electrode, and a method of manufacturing the same.

According to an aspect of the present invention, there is provided a liquid crystal display device comprising: a plurality of pixels each having a first region emitting in a first direction and a second region emitting in a second direction opposite to the first direction; An intermediate layer disposed on the first and second electrodes, the intermediate layer including an organic light emitting layer; and a second electrode disposed on the first electrode and the second electrode, A third electrode formed on the intermediate layer and positioned to be located in the first region and the second region; a first auxiliary layer disposed on the first region on the third electrode; A second auxiliary layer disposed in the second region, and a fourth electrode disposed in the first region on the second auxiliary layer.

And the fourth electrode may not be located in the second region.

The fourth electrode may be located in the second region and the thickness of the portion of the fourth electrode located in the second region may be less than the thickness of the portion of the fourth electrode located in the first region.

A portion of the fourth electrode located in the second region may be formed on the second auxiliary layer.

The first auxiliary layer may be provided not to be located in the second region.

The second auxiliary layer may not be positioned in the first region.

The second auxiliary layer may be provided to be located in the first region, and the first auxiliary layer may be formed on the second auxiliary layer in the first region.

The first auxiliary layer may be disposed in the second region, and the second auxiliary layer may be formed on the first auxiliary layer in the second region.

The thickness of the fourth electrode may be greater than the thickness of the third electrode.

The adhesion of the fourth electrode to the first auxiliary layer may be stronger than the adhesion of the fourth electrode to the second auxiliary layer.

The first auxiliary layer may be formed of Alq3, Di-tungsten tetra (hexahydropyrimidopyrimidine), Fullerene, Lithium Fluoride (LiF), ADN [9,10-di (2-naphthyl ) anthracene, or 8-hydroxyquinolinolato-lithium (Liq).

The second auxiliary layer may be formed of at least one selected from the group consisting of N, N'-diphenyl-N, N'-bis (9-phenyl-9H-carbazol- diphenyl-N, N'-bis (9-phenyl-9H-carbazol-3-yl) biphenyl-4,4'- (9-phenyl-9H-carbazol-3-yl) phenyl) -9H-fluorene- phenyl) -l-phenyl-lH-fluorene-2-amine, 2- (4- (9,10- di (naphthalen- 1-phenyl-l-phenyl-lH-benzo- [D] imidazole was used as the starting material. , m-MTDATA [4,4,4-tris (3-methylphenylphenylamino) triphenylamine],? -NPD (N, N'-bis (1-naphthyl) -N, N'- -4,4'-diamine, or TPD [4,4'-Bis [N- (3-methylphenyl) -N-phenylamino] biphenyl].

The fourth electrode may include Mg.

According to another aspect, the method includes defining a plurality of pixels each having a first region emitting light in a first direction and a second region emitting light in a second direction opposite to the first direction, The method comprising: forming a plurality of first electrodes respectively disposed in a first region; forming a plurality of second electrodes respectively disposed in the second region of each pixel; Depositing a metal for forming a third electrode on the intermediate layer to form a third electrode so as to be located in the first region and the second region; , Forming a first auxiliary layer to be located in the first region on the third electrode, forming a second auxiliary layer to be located in the second region on the third electrode, And a fourth electrode forming metal on the second auxiliary layer Kinder, a method of manufacturing an organic light emitting display including forming a fourth electrode provided to be positioned in the first region.

The step of forming the fourth electrode may include depositing the metal for forming the fourth electrode at the same time in the first region and the second region so that the fourth electrode is not located in the second region have.

Wherein forming the fourth electrode includes depositing the fourth electrode forming metal on the first region and the second region at the same time so that the fourth electrode is also located in the second region, The thickness of the portion of the fourth electrode located in the second region may be thinner than the thickness of the portion of the fourth electrode located in the first region.

The step of forming the fourth electrode may include forming at least the fourth electrode in the second region on the second auxiliary layer.

The first auxiliary layer may not be located in the second region.

The second auxiliary layer may be formed not to be located in the first region.

The second auxiliary layer may be formed to be located in the first region, and the first auxiliary layer may be formed on the second auxiliary layer in the first region.

The first auxiliary layer may be formed to be located in the second region, and the second auxiliary layer may be formed on the first auxiliary layer in the second region.

The thickness of the fourth electrode may be greater than the thickness of the third electrode.

The adhesion of the metal for forming the fourth electrode to the first auxiliary layer may be stronger than the adhesion of the metal for forming the fourth electrode to the second auxiliary layer.

The first auxiliary layer may be formed of Alq3, Di-tungsten tetra (hexahydropyrimidopyrimidine), Fullerene, Lithium Fluoride (LiF), ADN [9,10-di (2-naphthyl ) anthracene, or 8-hydroxyquinolinolato-lithium (Liq).

The second auxiliary layer may be formed of at least one selected from the group consisting of N, N'-diphenyl-N, N'-bis (9-phenyl-9H-carbazol- diphenyl-N, N'-bis (9-phenyl-9H-carbazol-3-yl) biphenyl-4,4'- (9-phenyl-9H-carbazol-3-yl) phenyl) -9H-fluorene- phenyl) -l-phenyl-lH-fluorene-2-amine, 2- (4- (9,10- di (naphthalen- 1-phenyl-l-phenyl-lH-benzo- [D] imidazole was used as the starting material. , m-MTDATA [4,4,4-tris (3-methylphenylphenylamino) triphenylamine], α-NPD (N, N'-bis (1-naphthyl) -N, N'- -4,4'-diamine, or TPD [4,4'-Bis [N- (3-methylphenyl) -N-phenylamino] biphenyl].

The metal for forming the fourth electrode may include Mg.

These general and specific aspects may be implemented by using a system, method, computer program, or any combination of systems, methods, and computer programs.

According to the embodiments, the fourth electrode formed of metal can be formed by patterning without a separate patterning mask, which is advantageous in the process.

In particular, the distance between the organic emission layer and the fourth electrode in the back emission region can be increased to reduce the influence of exciton emission, thereby improving the emission efficiency.

The fourth electrode may not be formed in the fourth region through which external light is transmitted, or may be formed to have a minimum thickness, thereby improving the transmittance of the entire panel.

The fourth electrode can reduce the wiring resistance of the third electrode.

There is an advantage that it is easy to apply to a large display device.

1 is a cross-sectional view schematically showing an embodiment of an organic light emitting display,
2 is a cross-sectional view schematically showing another embodiment of the organic light emitting display device,
FIG. 3 is a plan view showing one embodiment of one pixel of the organic light emitting portion of FIGS. 1 and 2. FIG.
Fig. 4 is a cross-sectional view showing an example of a cross section according to II in Fig. 3,
5 is a circuit diagram showing an example of a pixel circuit portion,
6 is a cross-sectional view for more specifically illustrating the organic light emitting devices of FIG. 4,
Fig. 7 is a cross-sectional view showing another example of a cross section according to II in Fig. 3,
FIG. 8 is a cross-sectional view showing another example of a cross section according to II in FIG. 3,
FIG. 9 is a sectional view for more specifically illustrating the organic light emitting devices of FIG. 8,
FIG. 10 is a cross-sectional view showing another example of a cross section according to II in FIG. 3,
11 is a cross-sectional view showing another example of a cross section according to II in Fig. 3,
12 is a sectional view for more specifically illustrating the organic light emitting elements of FIG. 11,
13 is a cross-sectional view showing another example of a cross section according to II in Fig. 3,
FIG. 14 is a plan view showing one embodiment of one pixel of the organic light emitting portion of FIGS. 1 and 2;
FIG. 15 is a cross-sectional view showing an example of a cross section taken along line II-II in FIG. 14,
FIG. 16 is a cross-sectional view showing another example of a cross section taken along line II-II of FIG. 14,
17 is a cross-sectional view showing another example of a cross section taken along line II-II in Fig.

These embodiments are capable of various transformations, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the embodiments, and how to achieve them, will be apparent from the following detailed description taken in conjunction with the drawings. However, the embodiments are not limited to the embodiments described below, but may be implemented in various forms.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein like reference numerals refer to like or corresponding parts throughout the drawings, and a duplicate description thereof will be omitted.

In the following embodiments, terms such as " first, second, "and the like are used for the purpose of distinguishing one element from another element, rather than limiting.

In the following examples, the singular forms "a", "an" and "the" include plural referents unless the context clearly dictates otherwise.

It will be further understood that the terms such as " comprises "or" having "in the following embodiments are intended to mean that a feature or element described in the specification is present and that the presence or absence of one or more other features or components It is not.

In the following embodiments, when a portion such as a film, an area, a component, or the like is on or on another portion, not only the portion on the other portion but also another film, region, component, .

In the drawings, components may be exaggerated or reduced in size for convenience of explanation. For example, the sizes and thicknesses of the components shown in the drawings are arbitrarily shown for convenience of explanation, and therefore, the following embodiments are not necessarily drawn to scale.

1 is a cross-sectional view schematically illustrating an organic light emitting display according to an embodiment of the present invention. Referring to FIG. 1, an OLED display according to an embodiment of the present invention includes a display unit 2 on a substrate 1.

The display unit 2 may include an organic light emitting portion 21 formed on the substrate 1 and a sealing substrate 23 sealing the organic light emitting portion 21. [

The sealing substrate 23 blocks external air and moisture from penetrating into the organic light emitting portion 21. [ The sealing substrate 23 may be formed of a transparent member so that an image formed from the organic light emitting portion 21 can be transmitted.

The edges of the substrate 1 and the sealing substrate 23 are bonded by a sealing material 24 so that the space 25 between the substrate 1 and the sealing substrate 23 is sealed. A moisture absorbent, a filler, or the like may be positioned in the space 25.

The organic light emitting portion 21 can be protected from the outside air by forming the thin film encapsulation layer 26 on the organic light emitting portion 21 instead of the sealing substrate 23 as shown in FIG.

The thin film encapsulation layer 26 may be made of a plurality of inorganic layers or may be formed by mixing an inorganic layer and an organic layer.

The organic layer of the thin film encapsulation layer 26 may be a single layer or a laminate layer formed of a polymer and preferably formed of any one of polyethylene terephthalate, polyimide, polycarbonate, epoxy, polyethylene and polyacrylate. More preferably, the organic layer may be formed of polyacrylate, and specifically, a monomer composition containing a diacrylate monomer and a triacrylate monomer may be polymerized. The monomer composition may further include a monoacrylate monomer. Further, the monomer composition may further include a known photoinitiator such as TPO, but is not limited thereto.

The inorganic layer of the thin film encapsulation layer 26 may be a single film or a laminated film containing a metal oxide or a metal nitride. Specifically, the inorganic layer may include any one of SiNx, Al2O3, SiO2, and TiO2.

The uppermost layer exposed to the outside of the thin film encapsulation layer 26 may be formed of an inorganic layer to prevent moisture permeation to the organic light emitting device.

The thin film encapsulation layer 26 may include at least one sandwich structure in which at least one organic layer is interposed between at least two inorganic layers. As another example, the thin film encapsulation layer 26 may include at least one sandwich structure in which at least one inorganic layer is interposed between at least two organic layers. As another example, the encapsulation layer 26 may include a sandwich structure in which at least one organic layer is interposed between at least two inorganic layers, and a sandwich structure in which at least one inorganic layer is interposed between at least two organic layers .

The thin film encapsulation layer 26 may include a first inorganic layer, a first organic layer, and a second inorganic layer sequentially from the top of the organic light emitting portion 21.

As another example, the thin film encapsulation layer 26 may include a first inorganic layer, a first organic layer, a second inorganic layer, a second organic layer, and a third inorganic layer sequentially from the top of the organic light emitting portion 21 .

As another example, the thin film encapsulation layer 26 may be sequentially formed from the top of the organic light emitting portion 21 by sequentially stacking a first inorganic layer, a first organic layer, a second inorganic layer, a second organic layer, a third inorganic layer, An organic layer, and a fourth inorganic layer.

A halogenated metal layer including LiF may be further included between the organic light emitting portion 21 and the first inorganic layer. The metal halide layer can prevent the organic light emitting portion 21 from being damaged when the first inorganic layer is formed by a sputtering method or a plasma deposition method.

The first organic layer may have a smaller area than the second inorganic layer, and the second organic layer may have a smaller area than the third inorganic layer.

As another example, the first organic layer may be formed to be completely covered with the second inorganic layer, and the second organic layer may be formed so as to be completely covered with the third inorganic layer.

The organic light emitting portion 26 of FIGS. 1 and 2 may include a plurality of pixels, and FIG. 3 is a plan view showing one pixel P among the plurality of pixels.

The pixels P may include a first region 31 and a second region 32 disposed adjacent to each other. The first region 31 may be a bottom emission region, and the second region 32 may be a top emission region.

The pixel P shown in FIG. 3 may be a single sub-pixel in which the first region 31 and the second region 32 emit light of a single color. However, the present invention is not limited thereto, and the first region 31 and the second region 32 may be a single sub-pixel emitting light of different colors. In the following embodiments, the first region 31 and the second region 32 are single sub-pixels emitting light of a single color.

The pixel P may be, for example, a sub-pixel emitting light of any one of red, green and blue. The organic light emitting portion 26 of FIGS. 1 and 2 further includes a plurality of subpixels which emit light of different colors of red, green and blue in addition to the pixel P shown in FIG.

As another example, the pixel P may be a sub-pixel emitting light of any one of red, green, blue and white. The organic light emitting portion 26 of FIGS. 1 and 2 further includes a plurality of subpixels which emit light of different colors of red, green, blue, and white in addition to the pixel P shown in FIG.

As another example, the subpixels emitting the red, green, blue, and / or white light may form a single pixel whose light is mixed with each other to emit white light. In this case, a color converting layer or a color filter for converting the white light of each pixel into a predetermined color can be applied.

The red, green, blue, and / or white are one example, and the present embodiment is not limited thereto. That is, if a white light can be emitted, a combination of various colors other than red, green, blue, and / or white may be used.

4 is a cross-sectional view showing an example of a cross section taken along the line I-I in Fig.

Referring to FIG. 4, the first region 31 emits a first image in a first direction, which is the direction of the substrate 1, and the second region 32 emits a second image in a second direction To emit a second image. For this purpose, organic light emitting devices are disposed in the first region 31 and the second region 32, respectively. These organic light emitting elements are electrically connected to the thin film transistor of the pixel circuit portion. The first pixel circuit portion of the first region 31 is disposed in the second region 32 without being disposed on the light emitting path, thereby preventing the luminous efficiency and the brightness of the first image from deteriorating. The second region 32 emits the second image in the direction opposite to the substrate 1 and therefore the first pixel circuit portion electrically connected to the organic light emitting element of the first region 31 and the second pixel circuit portion electrically connected to the second region 32 All of the second pixel circuit portions electrically connected to the organic light emitting elements of the region 32 can be disposed. The first pixel circuit portion and the second pixel circuit portion may be independent pixel circuit portions, so that the first image and the second image may be separate images instead of the same image.

The present invention is not limited thereto and may be provided with a single pixel circuit portion electrically connected to the organic light emitting element of the first region 31 and the organic light emitting element of the second region 32, respectively. The pixel circuit portion is located in the second region 32 to prevent the luminous efficiency and luminance of the first image from deteriorating.

5 is a circuit diagram showing a more specific example of a single pixel circuit portion (PC). Referring to FIG. 5, a scan line S, a data line D, and a Vdd line V, which is a driving power source, are electrically connected to the pixel circuit portion PC. Although not shown in the drawing, according to the configuration of the pixel circuit portion PC, more various conductive lines besides the scan line S, the data line D, and the Vdd line V may be provided.

The pixel circuit part PC includes a switching thin film transistor T1 connected to the scan line S and the data line D, a driving thin film transistor T2 connected to the switching thin film transistor T1 and the Vdd line V, And a capacitor Cst connected to the switching thin film transistor T1 and the driving thin film transistor T2.

The gate electrode of the switching thin film transistor T1 is connected to the scan line S to receive a scan signal and the first electrode thereof is connected to the data line D and the second electrode thereof is connected to the capacitor Cst and the driving thin film transistor T2 And is connected to the gate electrode.

The first electrode of the driving thin film transistor T2 is connected to the Vdd line V and the capacitor Cst and the second electrode is connected to the first light emitting thin film transistor T3 and the first electrode of the second light emitting thin film transistor T4. Respectively.

The second electrode of the first light emitting thin film transistor T3 is electrically connected to the first organic light emitting element E1 located in the first region 31, May be electrically connected to the second organic light emitting device (E2) located in the second region (32). The gate electrodes of the first light emitting thin film transistor T3 and the second light emitting thin film transistor T4 are electrically connected to separate light emitting signal lines.

In FIG. 5, all the thin film transistors T1 to T4 are shown as P type, but the present invention is not limited thereto, and at least one of the thin film transistors may be formed as an N type. The number of the thin film transistors and capacitors is not limited to the illustrated embodiment, and two or more thin film transistors and one or more capacitors may be further combined according to the pixel circuit part PC.

According to the above-described configuration of the pixel circuit part PC, the image image information inputted through the data line D is realized as the first organic light emitting element E1 when the first light emitting thin film transistor T3 is opened When the second light emitting thin film transistor T4 is opened, the first organic light emitting device E1 and the second organic light emitting device E2 may be implemented as a second organic light emitting device E2. Therefore, it is possible to realize double-side emission so that images of the front emission side and the back side emission side are reversed to each other in a mirror image by time division driving. Of course, when the same switching signal is applied to the first light emitting thin film transistor T3 and the second light emitting thin film transistor T4 in a state in which the same data signal is supplied, an inverted mirror image can be seen from the front side and the back side. As described above, the pixel circuit part PC can realize various screens in a state in which the first organic light emitting element E1 and the second organic light emitting element E2 share the basic configuration of the pixel circuit part.

Referring again to FIG. 4, the first thin film transistor TR1 and the second thin film transistor TR2 are located on the substrate 1, and the first electrode 221 and the second electrode 2 region 32. The second electrode 222 is electrically connected to the first electrode 32 and the second electrode 222, respectively. The first thin film transistor TR1 and the second thin film transistor TR2 may be the driving thin film transistors of the first pixel circuit portion and the second pixel circuit portion, respectively. As another example, the first thin film transistor TR1 and the second thin film transistor TR2 may be the first light emitting thin film transistor T3 and the second light emitting thin film transistor T4 shown in FIG. 5, respectively.

4, a buffer film 211 is formed on the substrate 1 and a pixel circuit portion including first and second thin film transistors TR1 and TR2 is formed on the buffer film 211. [ .

Semiconductor active layers 2121 and 2122 are formed on the buffer layer 211.

The buffer layer 211 is formed of a transparent insulating material. The buffer layer 211 prevents penetration of impurities and smoothes the surface. The buffer layer 211 may be formed of various materials capable of performing such a role. For example, the buffer layer 211 may be formed of an inorganic material such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, titanium oxide or titanium nitride, or an organic material such as polyimide, polyester, Or a laminate thereof. The buffer film 211 is not an essential component and may not be provided if necessary.

The semiconductor active layers 2121 and 2122 may be formed of polycrystalline silicon, but the present invention is not limited thereto and may be formed of an oxide semiconductor. (A, b, and c are real numbers satisfying the condition of a = 0, b = 0, and c > 0, respectively), for example, the GIZO layer [(In2O3) a (Ga2O3) b (ZnO) c layer].

A gate insulating film 213 is formed on the buffer film 211 so as to cover the semiconductor active layers 2121 and 2122 and gate electrodes 2141 and 2142 are formed on the gate insulating film 213.

An interlayer insulating film 215 is formed on the gate insulating film 213 so as to cover the gate electrodes 2141 and 2142 and source electrodes 2161 and 2162 and drain electrodes 2171 and 2172 are formed on the interlayer insulating film 215 And contacted with the semiconductor active layers 2121 and 2122 through the contact holes, respectively.

The structures of the first and second thin film transistors TR1 and TR2 are not limited thereto, and various structures of the thin film transistors may be applied.

A first insulating film 218 is formed to cover these thin film transistors. The first insulating layer 218 may be a single layer or a plurality of insulating layers whose top surfaces are planarized. The first insulating film 218 may be formed of an inorganic material and / or an organic material.

As shown in FIG. 4, a first electrode 221 of a first organic light emitting device electrically connected to the first thin film transistor TR1 is formed on the first insulating film 218, and a first electrode 221 electrically connected to the second thin film transistor TR2 A second electrode 222 of the second organic light emitting device is formed. The first electrode 221 and the second electrode 222 are formed in an island shape.

A second insulating layer 219 is formed on the first insulating layer 218 so as to cover the edges of the first and second electrodes 221 and 222. The second insulating layer 219 may be formed of an organic material such as acrylic or polyimide.

An intermediate layer 220 including an organic light emitting layer is formed on the first and second electrodes 221 and 222 and a third electrode 223 is formed to cover the intermediate layer 220 to form organic light emitting devices .

6 is a schematic diagram for explaining the organic light emitting devices more specifically.

The intermediate layer 220 may be a low molecular weight or a polymer organic layer.

The intermediate layer 220 may include a first intermediate layer 2201, a second intermediate layer 2202 and an organic light emitting layer 2203 interposed between the first intermediate layer 2201 and the second intermediate layer 2202.

The first intermediate layer 2201 is sandwiched between the organic light emitting layer 2203 and the first and second electrodes 221 and 222 and includes a hole injection layer (HIL) and / or a hole transport layer (HTL) Transport Layer).

The second intermediate layer 2202 is sandwiched between the organic light emitting layer 2203 and the third electrode 223 and includes an electron transport layer (ETL) and / or an electron injection layer (EIL) .

The organic light emitting layer 2203 may be formed independently for red, green and blue subpixels, and the first intermediate layer 2201 and the second intermediate layer 2202 may be formed to be common to all subpixels as a common layer . 4 and 6, since the first region 31 and the second region 32 are included in the pixel P constituting one subpixel, the first region 31 and the second region 32 May be deposited with a single color of the organic light emitting layer 2203. However, the present invention is not limited thereto, and the first region 31 and the second region 32 of the organic light emitting layer 2203 may have different colors.

The hole injection layer (HIL) may include a phthalocyanine compound such as copper phthalocyanine or starburst type amine TCTA, m-MTDATA, or m-MTDAPB.

The hole transport layer (HTL) may be formed by a combination of N, N'-bis (3-methylphenyl) -N, N'-diphenyl- [1,1-biphenyl] -4,4'- diamine (TPD) '- di (naphthalen-1-yl) -N, N'-diphenylbenzidine (α-NPD).

The electron transport layer (ETL) may include Alq3.

The electron injection layer (EIL) may include LiF, NaCl, CsF, Li2O, BaO, or Liq.

The organic light emitting layer may include a host material and a dopant material.

The host material may be selected from the group consisting of tris (8-hydroxy-quinolinato) aluminum (Alq3), 9,10-di (naphthyl-2-yl) anthracene (ADN), 2-tert- Bis (2,2-diphenyl-ethan-1-yl) biphenyl (DPVBi), or 4,4'-bis (2,2- 4-methylphenyl) -ethen-1-yl) biphenyl (p-DMDPVBi).

The dopant material may be selected from DPAVBi (4,4'-bis [4- (di-p-tolylamino) styryl] biphenyl), ADN (9,10- (2-tert-butyl-9,10-di (naphth-2-yl) anthracene).

The first electrode 221 and the second electrode 222 function as an anode electrode and the third electrode 223 can function as a cathode electrode. And the polarities of the second electrode 222 and the third electrode 223 may be reversed.

When the first electrode 221 and the second electrode 222 function as an anode electrode, the first electrode 221 and the second electrode 222 may be formed of ITO, IZO, ZnO, or In2O3 And the like. The second electrode 222 located in the second region 32 where the image is implemented in the direction opposite to the substrate 1 may be formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, (Not shown) including at least one of Yb, Co, Sm, and Ca.

The third electrode 223 may be formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Yb, Co, Sm or Ca. < / RTI > The third electrode 223 must be provided so that the light from the light emitting layer can be transmitted in the second direction so that the second image can be smoothly realized. For this, the third electrode 223 may be formed of a thin film using Mg and / or Mg alloy. The third electrode 223 may be formed of a thin film using Ag and / or Ag alloy having a higher light transmittance. The third electrode 223 may be formed by co-deposition of Mg and / or Mg alloy and Ag and / or Ag alloy, or may be formed in a laminated form.

Unlike the first electrode 221 and the second electrode 222, the third electrode 223 is formed as a common electrode to apply a common voltage across all the pixels. The third electrode 223 is not patterned by pixels using an open mask And may be formed by common deposition. Accordingly, the third electrode 223 may be located in both the first region 31 and the second region 32.

A first auxiliary layer 231 is formed in the first region 31 and a second auxiliary layer 232 is formed in the second region 32 over the third electrode 223. 4, the first auxiliary layer 231 is not formed in the second region 32 but is patterned to be formed only in the first region 31, and the second auxiliary layer 232 is patterned 1 region 31 and is formed only in the second region 32. In this case,

The first auxiliary layer 231 may be made of a material that can be well bonded to the metal forming the fourth electrode 224, particularly Mg and / or Mg alloy.

Preferably, the second auxiliary layer 232 is made of a material that does not bond well with the metal forming the fourth electrode 224, especially Mg and / or Mg alloy.

For example, the first auxiliary layer 231 may be formed of Alq3, Di-tungsten tetra (hexahydropyrimidopyrimidine), Fullerene, Lithium Fluoride (LiF), ADN [9,10-di (2-naphthyl) anthracene], or 8-hydroxyquinolinolato-lithium (Liq).

The second auxiliary layer 232 may be formed of a material selected from the group consisting of N, N'-diphenyl-N, N'-bis (9-phenyl-9H-carbazol- -diphenyl-N, N'-bis (9-phenyl-9H-carbazol-3-yl) biphenyl-4,4'- (4-phenyl-9H-carbazol-3-yl) phenyl) -9H-fluorene- -9H-carbazol-3-yl) phenyl) -9H-fluorene-2-amine, 2- (4- (9,10- Phenyl- lH-benzo [D] imidazole (2- (4- (9,10-di (naphthalene-2-yl) anthracene- imidazole, m-MTDATA [4,4,4-tris (3-methylphenylphenylamino) triphenylamine],? -NPD (N, N'-bis (1-naphthyl) -N, N'- biphenyl] -4,4'-diamine, or TPD [4,4'-Bis [N- (3-methylphenyl) -N-phenylamino] biphenyl].

After the first auxiliary layer 231 and the second auxiliary layer 232 are formed on the third electrode 223, the fourth electrode 224 is formed.

The fourth electrode 224 is formed by commonly depositing a metal for forming a fourth electrode over all the pixels including the first region 31 and the second region 32 using an open mask.

When the metal for forming the fourth electrode is deposited in common over all of the pixels using the open mask, the metal for forming the fourth electrode is deposited well on the first auxiliary layer 231 and the second auxiliary layer 232 ) Is not well deposited. This is because the adhesion of the fourth electrode 224 to the first auxiliary layer 231 is stronger than the adhesion of the fourth electrode 224 to the second auxiliary layer 232.

Accordingly, the fourth electrode 224 may be located in the first region 31 and may be automatically patterned so as not to be located in the second region 32. Therefore, the fourth electrode 224 can be easily patterned without using a separate patterning mask. The metal for forming the fourth electrode may be Mg and / or Mg alloy which is well deposited on the first auxiliary layer 231 and not deposited on the second auxiliary layer 232. However, the present invention is not limited thereto. The metal for forming the fourth electrode may be Ag, Mg, Al, Pt or the like if the adhesion to the first auxiliary layer 231 is stronger than the adhesion to the second auxiliary layer 232. [ , Pd, Au, Ni, Nd, Ir, Cr, Li, Yb, Co, Sm or Ca can be applied.

Although not shown, the fourth electrode 224 may be in contact with the third electrode 223 in a region outside the first region 31 and the second region 32. In this case, it is preferable that the first auxiliary layer 231 and the second auxiliary layer 232 are not present in a region where the fourth electrode 224 contacts the third electrode 223.

As described above, since the third electrode 223 is formed as a thin film and serves as a common electrode for applying a common voltage across all the pixels, a voltage drop phenomenon may occur if the sheet resistance increases. Since the fourth electrode 224 contacts the third electrode 223, the voltage drop of the third electrode 223 can be reduced. For this, the fourth electrode 224 may be thicker than the third electrode 223.

The fourth electrode 224 is formed in the first region 31 so that when the organic light emitting element of the first region 31 emits the first image in the direction of the substrate 1, It can serve as a reflector and accordingly the image quality of the first image can be further improved.

On the other hand, the thickness of the first intermediate layer 2201 may be thicker than that of the second intermediate layer 2202. In this case, the distance between the organic light emitting layer 2203 and the second electrode 222 can be sufficiently secured in the second region 32, which is the entire light emitting region, so that the exciton quenching phenomenon can be prevented, The luminous efficiency can be improved.

The thickness of the second intermediate layer 2202 may be relatively thinner than the thickness of the first intermediate layer 2201 in the first region 31 forming the bottom emission type organic light emitting diode. The distance between the light emitting layer 2203 and the fourth electrode 224, which is a reflective plate, is short, so that an exciton quenching phenomenon may occur. As a result, the light emitting efficiency may be lowered. 6, since the first auxiliary layer 231 is interposed between the organic light emitting layer 2203 and the fourth electrode 224 in the first region 31, the first region 31 The distance d1 between the organic light emitting layer 2203 and the fourth electrode 224 can be increased by the thickness of the first auxiliary layer 231 and the influence of the above-described exciton coupling is reduced, Can be improved.

7 is a cross-sectional view showing another embodiment of the cross section taken along the line I-I in Fig.

As described above, even if the metal, particularly the Mg and / or the Mg alloy, is hardly adhered onto the second auxiliary layer 232, the metal for forming the fourth electrode is deposited on the second auxiliary layer 232 .

Therefore, when a metal for forming a fourth electrode is deposited on the first region 31 and the second region 32 by using the open mask in a state where the second auxiliary layer 232 is formed in the second region 32, The first region 224 may be formed in both the first region 31 and the second region 32, as shown in FIG.

At this time, although the metal for forming the fourth electrode is partially deposited on the second auxiliary layer 232, the amount thereof is very small, and the thickness of the portion 224b located in the second region 32 of the fourth electrode 224 t2 of the fourth electrode 224 is much thinner than the thickness t1 of the portion 224a located in the first region 31 of the fourth electrode 224. [ Therefore, the transmittance of the second image may not be significantly lowered due to the portion 224b of the fourth electrode 224 located in the second region 32.

FIG. 8 is a cross-sectional view showing another embodiment of the section taken along the line I-I in FIG. 3, and FIG. 9 is a cross-sectional view schematically showing the organic light emitting elements in FIG.

8 and 9 is different from the embodiment shown in Figs. 4 and 6 in that the second auxiliary layer 232 is formed in both the first region 31 and the second region 32, 1 auxiliary layer 231 is formed only in the first region 31. [ The first auxiliary layer 231 may be formed on the second auxiliary layer 232 in the first region 31.

When the fourth electrode forming metal is deposited on the first region 31 and the second region 32 in this state, the fourth electrode 224 is formed only on the first auxiliary layer 231 of the first region 31 And is not formed on the second auxiliary layer 232 of the second region 32. Therefore, the fourth electrode 224 can be easily patterned without using a separate patterning mask.

Since the second auxiliary layer 232 and the first auxiliary layer 231 are interposed between the organic light emitting layer 2203 and the fourth electrode 224 in the first region 31, The distance d2 between the first auxiliary layer 2203 and the fourth electrode 224 can be increased by the thickness of the first auxiliary layer 231 and the second auxiliary layer 232 and the influence of the above- The luminous efficiency can be improved.

10 is a cross-sectional view showing another embodiment of the cross section taken along line I-I of FIG.

The embodiment shown in FIG. 10 differs from the embodiment shown in FIG. 8 in that the fourth electrode 224 is formed up to the second region 32 as well as the first region 31.

The thickness t2 of the portion 224b located in the second region 32 of the fourth electrode 224 is less than the thickness t2 of the second region 32 of the fourth electrode 224 even though the metal for forming the fourth electrode is partially deposited on the auxiliary layer 230. [ Is much thinner than the thickness t1 of the portion 224a of the electrode 224 located in the first region 31. [ Therefore, the transmittance of the second image may not be significantly lowered due to the portion 224b of the fourth electrode 224 located in the second region 32.

11 is a cross-sectional view illustrating another embodiment of the cross section taken along the line I-I of FIG. 3, and FIG. 12 is a cross-sectional view schematically illustrating the organic light emitting devices of FIG.

11 and 12, unlike the embodiment shown in FIGS. 4 and 6, the first auxiliary layer 231 is formed in both the first region 31 and the second region 32, 2 auxiliary layer 232 is formed only in the first region 31. [ The second auxiliary layer 232 may be formed on the first auxiliary layer 231 in the second region 32.

When the fourth electrode forming metal is deposited on the first region 31 and the second region 32 in this state, the fourth electrode 224 is formed only on the first auxiliary layer 231 of the first region 31 And is not formed on the second auxiliary layer 232 of the second region 32. Therefore, the fourth electrode 224 can be easily patterned without using a separate patterning mask.

Since the first auxiliary layer 231 is interposed between the organic light emitting layer 2203 and the fourth electrode 224 in the first region 31, the organic light emitting layer 2203 and the fourth electrode 224 can be increased by the thickness of the first auxiliary layer 231, and the effect of the above-described exciton illumination can be reduced, so that the luminous efficiency can be improved.

13 is a cross-sectional view showing another embodiment of the section taken along the line I-I in Fig.

The embodiment shown in FIG. 13 is different from the embodiment shown in FIG. 11 in that the fourth electrode 224 is formed up to the second region 32 as well as the first region 31.

The thickness t2 of the portion 224b located in the second region 32 of the fourth electrode 224 is less than the thickness t2 of the second region 32 of the fourth electrode 224 even though the metal for forming the fourth electrode is partially deposited on the auxiliary layer 230. [ Is much thinner than the thickness t1 of the portion 224a of the electrode 224 located in the first region 31. [ Therefore, the transmittance of the second image may not be significantly lowered due to the portion 224b of the fourth electrode 224 located in the second region 32.

Fig. 14 is a plan view showing a pixel P 'according to another example of the organic light emitting portion 21 shown in Figs. 1 and 2. Fig.

The pixel P 'includes a first region 31, a second region 32 and a third region 33 arranged adjacent to each other. The first region 31 may be a bottom emission region, the second region 32 may be a top emission region, and the third region 33 may be an external light transmission region through which external light is transmitted in the thickness direction of the OLED display device. Area. 14 shows a configuration in which the first area 31, the second area 32 and the third area 33 are sequentially arranged in the longitudinal direction. However, the present invention is not limited to this, and the third area 33 The first region 31 and the second region 32 or the order of the first region 31, the third region 33 and the second region 32 in that order.

In addition, the third region 33 may be provided for each single subpixel as shown in FIG. 14, but the present invention is not limited thereto, and one per subpixel may be provided. As another example, one subpixel constituting one unit pixel, for example, one per red, green and blue subpixel, and one per red, green, blue and white subpixel as another example.

15 is a cross-sectional view showing one embodiment of a cross section taken along the line II-II of FIG.

15 shows that the first auxiliary layer 231 is formed only in the first region 31 and the second auxiliary layer 232 is formed only in the second region 32 and the third region 33 do. Accordingly, the fourth electrode 224 may be formed only in the first region 31, and may not be formed in the second region 32 and the third region 33.

Accordingly, it is possible to prevent the transmittance of the external light due to the fourth electrode 224 from being lowered in the third region 33 where the external light is transmitted, and to improve the external light transmittance of the organic light emitting portion. Can be implemented.

16 is a cross-sectional view showing another embodiment of the cross section taken along the line II-II in FIG.

In the embodiment shown in FIG. 16, the fourth electrode 224 is formed as a thin film on the second auxiliary layer 232, unlike the embodiment shown in FIG. Accordingly, the fourth electrode 224 is formed in the first region 31 to the third region 33.

Even if a part of the metal for forming the fourth electrode is deposited on the second auxiliary layer 232, the amount of the metal for forming the fourth electrode is very small and the amount of the metal in the second region 32 and the third region 33 of the fourth electrode 224 The thickness t2 of the first electrode 224b 224c is much thinner than the thickness t1 of the portion 224a of the fourth electrode 224 located in the first region 31. Accordingly, the transmittance of the second image may not be significantly lowered due to the portion 224b located in the second region 32 of the fourth electrode 224, The transmittance of the external light may not be largely lowered due to the portion 224c.

It is needless to say that the structure of the third region 33 may be applied to the embodiments of FIGS. 7, 8, 10, and 11 as well. In this case, the laminated structure of the first auxiliary layer 231 and / or the second auxiliary layer 232 in the third region 33 is formed in the first region 31 in the first auxiliary layer 231 and / It is preferable to make it the same as the lamination structure of the auxiliary layer 232.

17 is a cross-sectional view showing a modification of the embodiment shown in Fig. 15, showing another embodiment of the cross section taken along line II-II in Fig.

17 differs from the embodiment shown in FIG. 15 in that the second insulating layer 219 further includes a transmission window 341 in the fourth region 34. FIG. The transmissive window 341 is formed by removing a part of the second insulating layer 219. The transmissive window 341 is formed in the fourth region 34 to improve the transmissivity of the external light in the fourth region 34 . 17 illustrates that the transmission window 341 is formed only in the second insulation film 219. However, the present invention is not limited thereto, and the first insulation film 218, the interlayer insulation film 215, the gate insulation film 213, At least one of the buffer films 211 may further include a transmission window connected to the transmission window 341. The third electrode 223 may further include a transmission window connected to the transmission window 341.

It is needless to say that the structure of the transmission window shown in FIG. 17 can be applied to the embodiment shown in FIG. It goes without saying that the structure of the transmission window shown in FIG. 17 may be applied to the embodiments in which the structure of the third region 33 is applied to the embodiments of FIGS. 7, 8, 10, or 11.

The present invention has been described above with reference to preferred embodiments. It will be understood by those skilled in the art that the present invention may be embodied in various other forms without departing from the spirit or essential characteristics thereof. Therefore, the above-described embodiments should be considered in an illustrative rather than a restrictive sense. The scope of the present invention is indicated by the appended claims rather than by the foregoing description, and all differences within the scope of equivalents thereof should be construed as being included in the present invention.

Claims (26)

A plurality of pixels each having a first region emitting light in a first direction and a second region emitting light in a second direction opposite to the first direction;
A plurality of first electrodes disposed in the first region of each pixel;
A plurality of second electrodes disposed in the second region of each pixel;
An intermediate layer disposed on the first electrodes and the second electrodes and including an organic light emitting layer;
A third electrode formed on the intermediate layer, the third electrode being disposed in the first region and the second region;
A first auxiliary layer disposed in the first region on the third electrode;
A second auxiliary layer disposed in the second region on the third electrode; And
And a fourth electrode disposed in the first region on the second auxiliary layer. The method according to claim 1,
And the fourth electrode is not positioned in the second region. The method according to claim 1,
Wherein the fourth electrode is located in the second region, and a thickness of a portion of the fourth electrode located in the second region is thinner than a thickness of a portion of the fourth electrode located in the first region. The method of claim 3,
And a portion of the fourth electrode located in the second region is formed on the second auxiliary layer. The method according to claim 1,
Wherein the first auxiliary layer is not positioned in the second region. 6. The method of claim 5,
And the second auxiliary layer is not positioned in the first region. 6. The method of claim 5,
Wherein the second auxiliary layer is disposed in the first region, and the first auxiliary layer is formed on the second auxiliary layer in the first region. The method according to claim 1,
Wherein the first auxiliary layer is disposed in the second region, and the second auxiliary layer is formed on the first auxiliary layer in the second region. 9. The method according to any one of claims 1 to 8,
Wherein the thickness of the fourth electrode is greater than the thickness of the third electrode. 9. The method according to any one of claims 1 to 8,
The adhesion of the fourth electrode to the first auxiliary layer is stronger than the adhesion of the fourth electrode to the second auxiliary layer. 9. The method according to any one of claims 1 to 8,
The first auxiliary layer may be formed of Alq3, Di-tungsten tetra (hexahydropyrimidopyrimidine), Fullerene, Lithium Fluoride (LiF), ADN [9,10-di (2-naphthyl ) anthracene] or 8-hydroxyquinolinolato-lithium (Liq: 8-hydroxyquinolinolato-lithium). 9. The method according to any one of claims 1 to 8,
The second auxiliary layer may be formed of at least one selected from the group consisting of N, N'-diphenyl-N, N'-bis (9-phenyl-9H-carbazol- diphenyl-N, N'-bis (9-phenyl-9H-carbazol-3-yl) biphenyl-4,4'- (9-phenyl-9H-carbazol-3-yl) phenyl) -9H-fluorene- phenyl) -l-phenyl-lH-fluorene-2-amine, 2- (4- (9,10- di (naphthalen- 1-phenyl-l-phenyl-lH-benzo- [D] imidazole was used as the starting material. , m-MTDATA [4,4,4-tris (3-methylphenylphenylamino) triphenylamine], α-NPD (N, N'-bis (1-naphthyl) -N, N'- -4,4'-diamine, or TPD [4,4'-Bis [N- (3-methylphenyl) -N-phenylamino] biphenyl]. 9. The method according to any one of claims 1 to 8,
And the fourth electrode comprises Mg. Defining a plurality of pixels each having a first region emitting in a first direction and a second region emitting in a second direction opposite to the first direction;
Forming a plurality of first electrodes respectively disposed in the first region of each pixel;
Forming a plurality of second electrodes each disposed in the second region of each pixel;
Forming an intermediate layer on the first electrodes and the second electrodes, the intermediate layer including an organic light emitting layer;
Depositing a metal for forming a third electrode on the intermediate layer to form a third electrode so as to be located in the first region and the second region;
Forming a first auxiliary layer to be located in the first region on the third electrode;
Forming a second auxiliary layer to be located in the second region on the third electrode; And
Depositing a metal for forming a fourth electrode on the first auxiliary layer and the second auxiliary layer to form a fourth electrode located in the first region. 15. The method of claim 14,
Wherein forming the fourth electrode comprises depositing the metal for forming the fourth electrode in the first region and the second region at the same time so that the fourth electrode is not located in the second region, A method of manufacturing a light emitting display device. 15. The method of claim 14,
Wherein forming the fourth electrode includes depositing the fourth electrode forming metal on the first region and the second region at the same time so that the fourth electrode is also located in the second region, Wherein a thickness of a portion of the fourth electrode located in the second region is thinner than a thickness of a portion of the fourth electrode located in the first region. 17. The method of claim 16,
Wherein the forming of the fourth electrode includes forming at least the fourth electrode in the second region on the second auxiliary layer. 15. The method of claim 14,
Wherein the first auxiliary layer is not located in the second region. 19. The method of claim 18,
And the second auxiliary layer is not formed in the first region. 19. The method of claim 18,
Wherein the second auxiliary layer is formed to be located in the first region, and the first auxiliary layer is formed on the second auxiliary layer in the first region. 15. The method of claim 14,
Wherein the first auxiliary layer is formed to be located in the second region, and the second auxiliary layer is formed on the first auxiliary layer in the second region. 22. The method according to any one of claims 14 to 21,
Wherein the thickness of the fourth electrode is greater than the thickness of the third electrode. 22. The method according to any one of claims 14 to 21,
Wherein the adhesion of the metal for forming the fourth electrode to the first auxiliary layer is stronger than the adhesion of the metal for forming the fourth electrode to the second auxiliary layer. 22. The method according to any one of claims 14 to 21,
The first auxiliary layer may be formed of Alq3, Di-tungsten tetra (hexahydropyrimidopyrimidine), Fullerene, Lithium Fluoride (LiF), ADN [9,10-di (2-naphthyl ) anthracene], or 8-hydroxyquinolinolato-lithium (Liq). 22. The method according to any one of claims 14 to 21,
The second auxiliary layer may be formed of at least one selected from the group consisting of N, N'-diphenyl-N, N'-bis (9-phenyl-9H-carbazol- diphenyl-N, N'-bis (9-phenyl-9H-carbazol-3-yl) biphenyl-4,4'- (9-phenyl-9H-carbazol-3-yl) phenyl) -9H-fluorene- phenyl) -l-phenyl-lH-fluorene-2-amine, 2- (4- (9,10- di (naphthalen- 1-phenyl-l-phenyl-lH-benzo- [D] imidazole was used as the starting material. , m-MTDATA [4,4,4-tris (3-methylphenylphenylamino) triphenylamine], α-NPD (N, N'-bis (1-naphthyl) -N, N'- -4,4'-diamine, or TPD [4,4'-Bis [N- (3-methylphenyl) -N-phenylamino] biphenyl]. 22. The method according to any one of claims 14 to 21,
Wherein the metal for forming the fourth electrode comprises Mg.

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