KR20150026902A - 기판의 화학적 기계적 연마 방법 - Google Patents

기판의 화학적 기계적 연마 방법 Download PDF

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Publication number
KR20150026902A
KR20150026902A KR20140112163A KR20140112163A KR20150026902A KR 20150026902 A KR20150026902 A KR 20150026902A KR 20140112163 A KR20140112163 A KR 20140112163A KR 20140112163 A KR20140112163 A KR 20140112163A KR 20150026902 A KR20150026902 A KR 20150026902A
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KR
South Korea
Prior art keywords
layer
polishing
substrate
chemical mechanical
abrasive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR20140112163A
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English (en)
Korean (ko)
Inventor
케이 젠센 미쉘
치안 바이니안
예 펭지
드그루트 마티
티 이슬람 모함매드
리처드 반하네헴 매튜
스트링 다렐
머네인 제임스
제임스 헨드론 제프리
지 나우랜드 존
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드
다우 글로벌 테크놀로지스 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드, 다우 글로벌 테크놀로지스 엘엘씨 filed Critical 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드
Publication of KR20150026902A publication Critical patent/KR20150026902A/ko
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/08—Processes
    • C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR20140112163A 2013-08-30 2014-08-27 기판의 화학적 기계적 연마 방법 Ceased KR20150026902A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/014,498 2013-08-30
US14/014,498 US9102034B2 (en) 2013-08-30 2013-08-30 Method of chemical mechanical polishing a substrate

Publications (1)

Publication Number Publication Date
KR20150026902A true KR20150026902A (ko) 2015-03-11

Family

ID=52470535

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20140112163A Ceased KR20150026902A (ko) 2013-08-30 2014-08-27 기판의 화학적 기계적 연마 방법

Country Status (7)

Country Link
US (1) US9102034B2 (https=)
JP (1) JP2015047692A (https=)
KR (1) KR20150026902A (https=)
CN (1) CN104416453B (https=)
DE (1) DE102014012378A1 (https=)
FR (1) FR3009989B1 (https=)
TW (1) TWI630066B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180029912A (ko) * 2016-09-13 2018-03-21 다우 글로벌 테크놀로지스 엘엘씨 고 평탄화 효율 화학 기계적 연마 패드 및 제조 방법
KR20210155548A (ko) * 2020-06-16 2021-12-23 임용성 연마제품 펀칭장치
KR20220034826A (ko) * 2019-07-12 2022-03-18 씨엠씨 머티리얼즈, 인코포레이티드 폴리아민 및 시클로헥산디메탄올 경화제를 사용한 폴리싱 패드

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US9216489B2 (en) * 2014-03-28 2015-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
USD785339S1 (en) * 2014-10-23 2017-05-02 Griot's Garage, Inc. Hand applicator buffing pad
US9484212B1 (en) * 2015-10-30 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US9868185B2 (en) * 2015-11-03 2018-01-16 Cabot Microelectronics Corporation Polishing pad with foundation layer and window attached thereto
JP6963075B2 (ja) * 2016-08-26 2021-11-05 株式会社東京精密 ウェハの表面処理装置
KR101853021B1 (ko) * 2017-01-12 2018-04-30 에스케이씨 주식회사 다공성 폴리우레탄 연마패드 및 이의 제조방법
US10391606B2 (en) 2017-06-06 2019-08-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pads for improved removal rate and planarization
US11179822B2 (en) * 2017-08-31 2021-11-23 Hubei Dinghui Microelectronics Materials Co., Ltd Polyurethane polishing layer, polishing pad comprising polishing layer, method for preparing polishing layer and method for planarizing material
JP6968651B2 (ja) * 2017-10-12 2021-11-17 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
KR102058877B1 (ko) * 2018-04-20 2019-12-24 에스케이씨 주식회사 다공성 폴리우레탄 연마패드 및 이의 제조방법
CN112720248B (zh) * 2020-12-16 2022-05-03 浙江工业大学 一种具有剪切膨胀特性的高效抛光盘及其制备方法
US12528152B2 (en) 2022-06-02 2026-01-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. CMP pad having ultra expanded polymer microspheres
US12544958B2 (en) * 2022-06-02 2026-02-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making low specific gravity polishing pads
US20230390889A1 (en) * 2022-06-02 2023-12-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cmp pad having polishing layer of low specific gravity

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US5212910A (en) 1991-07-09 1993-05-25 Intel Corporation Composite polishing pad for semiconductor process
US5287663A (en) 1992-01-21 1994-02-22 National Semiconductor Corporation Polishing pad and method for polishing semiconductor wafers
US5245790A (en) * 1992-02-14 1993-09-21 Lsi Logic Corporation Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
JPH08216033A (ja) * 1995-02-16 1996-08-27 Fuji Photo Film Co Ltd 研磨テープ
EP0779655A3 (en) 1995-12-14 1997-07-16 International Business Machines Corporation A method of chemically-mechanically polishing an electronic component
JP3611404B2 (ja) * 1996-06-21 2005-01-19 株式会社荏原製作所 ポリッシング装置
US5692950A (en) 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
US6524164B1 (en) 1999-09-14 2003-02-25 Applied Materials, Inc. Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus
US6582281B2 (en) * 2000-03-23 2003-06-24 Micron Technology, Inc. Semiconductor processing methods of removing conductive material
US6561891B2 (en) 2000-05-23 2003-05-13 Rodel Holdings, Inc. Eliminating air pockets under a polished pad
US6749485B1 (en) 2000-05-27 2004-06-15 Rodel Holdings, Inc. Hydrolytically stable grooved polishing pads for chemical mechanical planarization
US6454634B1 (en) 2000-05-27 2002-09-24 Rodel Holdings Inc. Polishing pads for chemical mechanical planarization
TW567114B (en) * 2000-12-01 2003-12-21 Toyo Boseki Polishing pad and manufacture method thereof and buffer layer for polishing pad
TWI222390B (en) * 2001-11-13 2004-10-21 Toyo Boseki Polishing pad and its production method
JP2005539398A (ja) * 2002-09-25 2005-12-22 ピーピージー インダストリーズ オハイオ， インコーポレイテッド 平坦化するための研磨パッド
US7704125B2 (en) 2003-03-24 2010-04-27 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US7101275B2 (en) 2003-09-26 2006-09-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Resilient polishing pad for chemical mechanical polishing
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US20050171224A1 (en) * 2004-02-03 2005-08-04 Kulp Mary J. Polyurethane polishing pad
US7132033B2 (en) 2004-02-27 2006-11-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of forming a layered polishing pad
US7371160B1 (en) * 2006-12-21 2008-05-13 Rohm And Haas Electronic Materials Cmp Holdings Inc. Elastomer-modified chemical mechanical polishing pad
US7569268B2 (en) 2007-01-29 2009-08-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US7455571B1 (en) * 2007-06-20 2008-11-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Window polishing pad
US20090062414A1 (en) 2007-08-28 2009-03-05 David Picheng Huang System and method for producing damping polyurethane CMP pads
US8052507B2 (en) 2007-11-20 2011-11-08 Praxair Technology, Inc. Damping polyurethane CMP pads with microfillers
US20100035529A1 (en) 2008-08-05 2010-02-11 Mary Jo Kulp Chemical mechanical polishing pad
TWM367052U (en) 2009-04-24 2009-10-21 Bestac Advanced Material Co Ltd Polishing pad and polishing device
US8157614B2 (en) 2009-04-30 2012-04-17 Applied Materials, Inc. Method of making and apparatus having windowless polishing pad and protected fiber
JP2012528487A (ja) 2009-05-27 2012-11-12 ロジャーズ コーポレーション 研磨パッド、それを用いた組成物および、その製造と使用方法
US8697239B2 (en) 2009-07-24 2014-04-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-functional polishing pad
US8551201B2 (en) 2009-08-07 2013-10-08 Praxair S.T. Technology, Inc. Polyurethane composition for CMP pads and method of manufacturing same
JP5634903B2 (ja) 2010-02-25 2014-12-03 東洋ゴム工業株式会社 研磨パッド
JP5710353B2 (ja) * 2011-04-15 2015-04-30 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
US8512427B2 (en) 2011-09-29 2013-08-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Acrylate polyurethane chemical mechanical polishing layer
JP5945874B2 (ja) * 2011-10-18 2016-07-05 富士紡ホールディングス株式会社 研磨パッド及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180029912A (ko) * 2016-09-13 2018-03-21 다우 글로벌 테크놀로지스 엘엘씨 고 평탄화 효율 화학 기계적 연마 패드 및 제조 방법
KR20220034826A (ko) * 2019-07-12 2022-03-18 씨엠씨 머티리얼즈, 인코포레이티드 폴리아민 및 시클로헥산디메탄올 경화제를 사용한 폴리싱 패드
KR20210155548A (ko) * 2020-06-16 2021-12-23 임용성 연마제품 펀칭장치

Also Published As

Publication number Publication date
US9102034B2 (en) 2015-08-11
FR3009989A1 (fr) 2015-03-06
FR3009989B1 (fr) 2019-05-24
CN104416453A (zh) 2015-03-18
CN104416453B (zh) 2017-07-28
TWI630066B (zh) 2018-07-21
US20150065014A1 (en) 2015-03-05
JP2015047692A (ja) 2015-03-16
TW201524676A (zh) 2015-07-01
DE102014012378A1 (de) 2015-03-05

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