KR20140134804A - Solar cell - Google Patents

Solar cell Download PDF

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Publication number
KR20140134804A
KR20140134804A KR1020130054420A KR20130054420A KR20140134804A KR 20140134804 A KR20140134804 A KR 20140134804A KR 1020130054420 A KR1020130054420 A KR 1020130054420A KR 20130054420 A KR20130054420 A KR 20130054420A KR 20140134804 A KR20140134804 A KR 20140134804A
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South Korea
Prior art keywords
electrode
photoelectric conversion
solar cell
layer
present
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KR1020130054420A
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Korean (ko)
Inventor
권태인
유동주
이성은
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엘지전자 주식회사
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Priority to KR1020130054420A priority Critical patent/KR20140134804A/en
Publication of KR20140134804A publication Critical patent/KR20140134804A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The thin film solar cell according to the present embodiment includes a substrate; A first electrode formed on the substrate; A photoelectric conversion layer formed on the first electrode; And a magnetic layer for generating a magnetic field which generates a force for moving electrons formed by photoelectric conversion of the photoelectric conversion layer in a horizontal direction.

Description

Thin film solar cell {SOLAR CELL}

The present invention relates to a thin film solar cell, and more particularly, to a thin film solar cell improved in structure.

With the recent depletion of existing energy sources such as oil and coal, interest in alternative energy to replace them is increasing. Among them, solar cells are attracting attention as a next-generation battery which converts solar energy directly into electrical energy using semiconductor devices.

Solar cells can be classified into silicon solar cells, compound solar cells, dye-sensitized solar cells, and thin-film solar cells. In such solar cells, various layers and electrodes can be fabricated by design. However, since the solar cell efficiency can be determined according to the design of various layers and electrodes, it is required to design various layers and electrodes to maximize the efficiency of the solar cell.

The present invention relates to a thin film solar cell capable of preventing recombination and improving efficiency.

The thin film solar cell according to the present embodiment includes a substrate; A first electrode formed on the substrate; A photoelectric conversion layer formed on the first electrode; And a magnetic layer for generating a magnetic field which generates a force for moving electrons formed by photoelectric conversion of the photoelectric conversion layer in a horizontal direction.

The thin film solar cell according to the present embodiment is a thin film solar cell according to an embodiment of the present invention. The thin film solar cell according to the present embodiment includes a plurality of thin film solar cells (hereinafter referred to as " thin film solar cells & 2 magnetic layer which generates a magnetic field in the horizontal direction. Thus, it is possible to effectively prevent the recombination of electrons by applying a force to the electrons moving toward the electrode in the first horizontal direction. As a result, it is possible to prevent carriers from being lost due to recombination and to lower the current density, and as a result, the efficiency of the thin film solar cell can be improved.

1 is a perspective view illustrating a solar cell according to an embodiment of the present invention.
2 is a sectional view taken along line II-II in Fig.
3 is a cross-sectional view schematically illustrating a principle of preventing recombination by a magnetic layer in a thin film solar cell according to an embodiment of the present invention.
4 is a cross-sectional view illustrating a solar cell according to a modification of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, it is needless to say that the present invention is not limited to these embodiments and can be modified into various forms.

In the drawings, the same reference numerals are used for the same or similar parts throughout the specification. In the drawings, the thickness, the width, and the like are enlarged or reduced in order to make the description more clear, and the thickness, width, etc. of the present invention are not limited to those shown in the drawings.

Wherever certain parts of the specification are referred to as "comprising ", the description does not exclude other parts and may include other parts, unless specifically stated otherwise. Also, when a portion of a layer, film, region, plate, or the like is referred to as being "on" another portion, it also includes the case where another portion is located in the middle as well as the other portion. When a portion of a layer, film, region, plate, or the like is referred to as being "directly on" another portion, it means that no other portion is located in the middle.

Hereinafter, a thin film solar cell according to an embodiment of the present invention will be described with reference to the accompanying drawings.

FIG. 1 is a perspective view showing a solar cell according to an embodiment of the present invention, and FIG. 2 is a sectional view taken along the line II-II in FIG.

1 and 2, a thin film solar cell 100 according to the present embodiment includes a first substrate 10 (hereinafter, referred to as a "front substrate") 10, The first electrode 20, the photoelectric conversion portion 30, the second electrode 40, and the magnetic layer 70, which are formed on the lower surface of the front substrate 10 in the drawing. A sealing material 50 and a second substrate (hereinafter referred to as "rear substrate") 60 may be further formed on the magnetic layer 70. At this time, the photoelectric conversion unit 30 includes a plurality of unit cells 30a, 30b, and 30c spaced apart from each other with a light transmitting portion 34 through which light is transmitted.

The front substrate 10 may be composed of a material having light transmittance and capable of protecting and supporting the first and second electrodes 20 and 40 formed on the front substrate 10 and the photoelectric conversion unit 30 . For example, the transparent substrate may be a transparent substrate made of glass, polymer, or the like.

A first electrode 20 is formed on the front substrate 10 and the first electrode 20 is separated into a plurality of unit cells 30a, 30b, and 30c by the first separator 22 .

The first electrode 20 is located on one surface of the photoelectric conversion unit 30 between the front substrate 10 and the photoelectric conversion unit 30 and charges generated by the photoelectric conversion unit 30 flow. Although the first electrode 20 is illustrated as being in contact with the front substrate 10 and the photoelectric conversion unit 30, the present invention is not limited thereto. Thus, at least one other layer may be located between the first electrode 20 and the front substrate 10 and / or between the first electrode 20 and the photoelectric conversion unit 30. [

The surface of the first electrode 20 may have irregularities by texturing. As described above, when the surface roughness of the first electrode 20 is increased to form irregularities, the reflectance of the incident light can be reduced. Accordingly, the amount of light reaching the photoelectric conversion portion 30 can be increased, and the optical loss can be minimized.

The first separator 22 exposes the front substrate 10 between the plurality of first electrodes 20. The first separator 22 may have a long line shape, for example, so that the plurality of first separators 22 may have a stripe shape. This takes into consideration that it takes a long time to change the moving direction of the laser when forming the first separator 22 using a laser or the like. That is, in this embodiment, the first separator 22 has a line shape, so that the process time can be reduced in the process of forming the first separator 22. However, the present invention is not limited thereto. Accordingly, it is needless to say that the first separator 22 may have various shapes that can divide the first electrode 20 into various shapes.

In this embodiment, the first electrode 20 may include a transparent conductive material having optical transparency and electrical conductivity. For example, the first electrode 20 may be formed of zinc oxide (ZnO), indium tin oxide (ITO), tin oxide (SnO 2 ), or a metal oxide and one or more impurities Boron (B), fluorine (F), aluminum (Al), etc.). However, the present invention is not limited thereto, and the first electrode 20 may be formed of various transparent conductive materials.

The first electrode 20 is formed by forming a layer made of a transparent conductive material on the front substrate 10 by a sputtering method, a chemical vapor deposition method, a spray method in which a sol-gel solution is sprayed, And by forming the separating portion 22. However, the present invention is not limited thereto. Accordingly, it is needless to say that a plurality of first electrodes 20 partitioned by the first separator 22 can be formed by various methods.

The photoelectric conversion portion 30 is located on the first electrode 20. The photoelectric conversion portion 30 is formed with a second separation portion 32 opened to connect the electrodes of the adjacent unit cells 30a, 30b, and 30c.

The second separator 32 separates the first electrode 20 of one of the unit cells 30a, 30b and 30c from the first separator 22 and the second electrode of the unit cell adjacent thereto (40) overlap each other. The second separator 32 is formed to expose the first electrode 20 and the second electrode 40 is filled in the second separator 32 when the second electrode 40 is formed, The first electrode 20 and the second electrode 40 of the unit cells 30a, 30b, and 30c are electrically connected.

The second separating portion 32 may have a long line shape, for example, so that the plurality of second separating portions 32 may have a stripe shape. This takes into consideration that it takes a long time to change the moving direction of the laser when forming the second separation part 22 by using a laser or the like. That is, in this embodiment, the second separator 32 has a line shape so that the process time can be reduced in the process of forming the second separator 32. However, the present invention is not limited thereto. Therefore, it is needless to say that the second separator 32 may have various shapes that can connect the first electrode 20 and the second electrode 40.

In this embodiment, the photoelectric conversion portion 30 includes a plurality of semiconductor layers 310, 320, and 330 which form a pin junction, as shown in FIG. More specifically, the photoelectric conversion portion 30 includes a first semiconductor layer 310 having a first conductivity type, a second semiconductor layer 320 having intrinsic characteristics, a second conductivity type opposite to the first conductivity type, And a third semiconductor layer 330 having a first electrode layer 330 and a second electrode layer 330.

The first semiconductor layer 310 may include amorphous or microcrystalline silicon having a first conductivity type impurity. And the first semiconductor layer 310 may include carbon or oxygen so as to have a large bandgap. The impurity of the first conductivity type may include a p-type impurity including a Group 3 element such as boron (B), aluminum (Al), gallium (Ga), or indium (In).

Accordingly, the first semiconductor layer 310 has a p-type impurity, and the amorphous silicon may have a form in which amorphous silicon carbide or amorphous silicon oxide is localized. However, the present invention is not limited thereto, and the first semiconductor layer 310 may have a form in which amorphous silicon carbide or amorphous silicon oxide is formed entirely with p-type impurities. In addition, the first semiconductor layer 310 may include hydrogen for passivating defects at a certain ratio. However, the present invention is not limited thereto, and the first semiconductor layer 310 may be composed of various materials.

The thickness of the first semiconductor layer 310 may be smaller than that of the second semiconductor layer 320 and the third semiconductor layer 330. This is because the first semiconductor layer 310 is located on the side where the light is incident on the entire surface of the second semiconductor layer 320, so that the thickness is relatively reduced to minimize the optical loss. However, it should be understood that the present invention is not limited thereto and may have various thicknesses.

The second semiconductor layer 320 is a layer having an i-type and is a layer that generates carriers (electrons and holes) by the light incident into the thin film solar cell 100. The second semiconductor layer 320 may include amorphous or microcrystalline silicon, amorphous silicon-germanium, or the like in consideration of the wavelength of the dominant light in the region where the thin film solar cell 100 is installed. The second semiconductor layer 320 may include hydrogen for passivating defects at a certain ratio.

The third semiconductor layer 330 may include amorphous or microcrystalline silicon having a second conductivity type impurity. At this time, the impurity of the second conductivity type may include an n-type impurity including a Group 5 element such as phosphorus (P), arsenic (As), bismuth (Bi), and antimony (Sb). In addition, the third semiconductor layer 330 may contain hydrogen for passivating defects at a certain ratio. However, the present invention is not limited thereto, and the third semiconductor layer 330 may be composed of various materials.

The surface of the plurality of layers 310, 320, and 330 constituting the photoelectric conversion unit 30 may have irregularities corresponding to the irregularities of the first electrode 20. When the surface roughness of the layers 310, 320, and 320 constituting the photoelectric conversion unit 30 is increased to increase the surface roughness, the reflectivity of the incident light can be reduced. Accordingly, the amount of light reaching the photoelectric conversion portion 30 can be increased, and the optical loss can be minimized.

The third separator 42 is formed in the photoelectric conversion unit 30. The third separator 42 forms the second electrode 40 and then the photoelectric conversion unit 30 and the second electrode 40, As shown in FIG. Therefore, the third separator 42 will be described in more detail after the second electrode 40 is described.

In the present embodiment, for example, the photoelectric conversion unit 30 has a single junction structure including one pin junction, but the present invention is not limited thereto. 4, the photoelectric conversion portion 30 may include a plurality of photoelectric conversion portions 31, 32, and 33 formed of the first to third semiconductor layers 310, 320, and 330, Or the like. In FIG. 4, a triple junction structure having three pin junctions is illustrated, but the present invention is not limited thereto. In the case of having a plurality of pin junction structures as described above, the bandgaps of the second semiconductor layers 320 of the respective photoelectric conversion portions 31, 32, and 33 are made different from each other to absorb all light of various wavelengths and used for photoelectric conversion . Thus, the efficiency of the thin film solar cell 100 can be improved.

1 and 2, the second electrode 40 is positioned on the first electrode 20 and the photoelectric conversion portion 30. [ Specifically, the second electrode 40 fills the second separator 32 on the first electrode 20 and the photoelectric converter 30, and the third separator 42 separates the unit cells 30a, 30b, 30c ).

The second electrode 40 is located on the other surface of the photoelectric conversion unit 30 between the photoelectric conversion unit 30 and the electrical layer 70 and the sealing material 50 (or the rear substrate 60) 30). Although the second electrode 40 is illustrated as being in contact with the photoelectric conversion unit 30 and the magnetic layer 70, the present invention is not limited thereto. Accordingly, at least one other layer may be located between the photoelectric conversion portion 30 and the second electrode 40 and / or between the second electrode 40 and the magnetic layer 70. For example, a transparent electrode layer (not shown) or the like may be further formed between the photoelectric conversion portion 30 and the second electrode 40 to improve the bonding property.

The third separator 42 is formed to expose the first electrode 20 between the plurality of second electrodes 40. That is, the third separator 42 is formed to penetrate through the photoelectric conversion unit 30 and the second electrode 40 and serves to separate them corresponding to the unit cells 30a, 30b, and 30c. The third separator 42 may have a long line shape, for example, so that the plurality of third separators 42 may have a stripe shape. This is considered to take a long time when changing the moving direction of the laser when forming the third separator 42 by using a laser or the like. That is, in this embodiment, the third separator 42 has a line shape so that the process time can be reduced in the process of forming the third separator 42. However, the present invention is not limited thereto. Accordingly, it is needless to say that the third separator 42 may have various shapes that can divide the second electrode 40 into various shapes.

The second electrode 40 may include a material having a lower light transmittance than the first electrode 20 and having excellent conductivity. The second electrode 40 may have a better reflection characteristic than the first electrode 20. Then, light incident through the front substrate 10 can be reflected and reused.

The second electrode 40 may include a metal material to satisfy such a characteristic. In one example, the second electrode 40 may comprise a single or multiple layers comprising silver, aluminum, gold, nickel, chromium, titanium, palladium, or alloys thereof.

Since the second electrode 40 is formed of a metal electrode or the like and has low light transmission characteristics, the second electrode 40 is difficult to transmit light to the portion where the second electrode 40 is formed, And the third separator 42 are formed). In other words, the third separator 42 substantially constitutes the light transmitting portion 34.

The second electrode 40 may be formed by forming a layer made of a metallic material by various methods such as sputtering, screen printing, inkjet, dispensing, and plating, and then forming a third separator 42 ). ≪ / RTI > However, the present invention is not limited thereto. Therefore, it is needless to say that a plurality of second electrodes 40 partitioned by the third separator 42 can be formed by various methods.

By this structure, a plurality of unit cells 30a, 30b, and 30c are connected in series with each other. However, the present invention is not limited thereto, and a plurality of unit cells 30a, 30b, and 30c may be connected in various ways such as parallel, serial, and so on.

In this embodiment, a magnetic layer 70 is formed on the second electrode 40 to generate a magnetic field which exerts a force on the electrons formed by the photoelectric conversion of the photoelectric conversion layer 30 in a predetermined direction. Thereby preventing the recombination of electrons. This will be described in more detail with reference to FIG. 3 together with FIG. 3 is a cross-sectional view schematically illustrating a principle of preventing recombination by a magnetic layer in a thin film solar cell according to an embodiment of the present invention.

When light is incident on the thin film solar cell 100, electrons and holes are generated in the second semiconductor layer 320. The electrons and holes thus generated are moved by the built-in potential, and the holes move toward the first electrode 20 through the first semiconductor layer 310 which is p-type, and electrons move to the n- And moves to the second electrode 40 through the semiconductor layer 330. [ The electrons moving in this manner are injected into the second semiconductor layer 320, the interface between the second semiconductor layer 320 and the third semiconductor layer 330, and the holes located inside the third semiconductor layer 330, . Then, the amount of electrons reaching the second electrode 40 is reduced, and the current density Jsc is reduced.

The magnetic layer 70 is moved in the first horizontal direction (the y-axis direction in the figure) of the thin-film solar cell 100 to the electrons moving in the direction toward the second electrode 40 An electric field is generated in a second horizontal direction (x-axis direction in the figure) that intersects with the first horizontal direction so as to apply a force (Lorentz force). Electrons directed toward the second electrode 40 are shifted in the first horizontal direction by the internal diffusion potential so as to be formed inside the second semiconductor layer 320 and between the second semiconductor layer 320 and the third semiconductor layer 330 And the holes located in the third semiconductor layer 330 are effectively prevented from recombining with each other.

At this time, the magnetic layer 70 includes a magnetic material, and may include, for example, a ferrite-based material, an Sm-Co-based material, and an Nd-Fe-N-based material. This magnetic material is suitable for forming a force in the first horizontal direction on electrons moving toward the second electrode 40 and is a material suitable for generating a magnetic field of a desired intensity.

The intensity of the magnetic field generated by the magnetic layer 70 may be from 1 mT to 1T. If the intensity of the magnetic field is less than 1 mT, the generated Lorentz force is not large and it may be difficult to suppress recombination of electrons moving toward the second electrode 40. If the intensity of the magnetic field exceeds 1T, electrons moving toward the second electrode 40 may receive a large amount of force in the first horizontal direction, thereby preventing the electrons from moving to the second electrode 40. As described above, in the present embodiment, the magnitude of the magnetic field can be limited, and the magnitude of the force applied to the electrons moving toward the second electrode 40 in the first horizontal direction can be effectively controlled.

In this embodiment, the magnetic layer 70 is formed on the second electrode 40, but the present invention is not limited thereto. That is, in another embodiment, the magnetic layer 70 may be formed in contact with the third semiconductor layer 330 without separately providing the second electrode 40. In this case, the magnetic layer 70 can also function as the second electrode 40 including the magnetic material having a high electrical conductivity. Thus, the structure of the thin film solar cell 100 can be simplified, and recombination can be prevented, thereby improving efficiency.

In this embodiment, it is illustrated that the magnetic layer 70 is located in contact with the second electrode 40. As such, the magnetic layer 70 is formed as close as possible to the second electrode 40, so that the electrons directed toward the second electrode 40 can be more effectively applied. Particularly, it is possible to more effectively prevent recombination by applying a force to electrons which have a moving speed faster than the hole and can be moved even by a small force. However, the present invention is not limited thereto, and the magnetic layer 70 may be formed on the sealing material 50, on the rear substrate 60, on the front substrate 10, between the front substrate 10 and the second electrode 40 Of course, be formed in various positions.

In this embodiment, the magnetic layer 70 has the same or very similar pattern as the second electrode 40. However, the present invention is not limited thereto. The magnetic layer 70 may be formed entirely without a pattern when the magnetic layer 70 is low in electrical conductivity and when the magnetic layer 70 is spaced apart from the first and second electrodes 10 and 40 .

The magnetic layer 70 having a pattern may be formed by forming a layer made of a metallic material by various methods such as a sputtering method, a screen printing method, an inkjet method, a dispensing method, a plating method, 42). However, the present invention is not limited thereto. Therefore, it goes without saying that the magnetic layer 70 having a pattern can be formed by various methods.

A sealing material 50 and a rear substrate 60 for sealing may be further disposed on the first electrode 20, the photoelectric conversion portion 30, the second electrode 40, and the magnetic layer 70.

The sealing material 50 is adhered by lamination to cut off water or oxygen which may adversely affect the thin film solar cell 100, so that the elements of the thin film solar cell 100 can be chemically bonded. As the sealing material 50, ethylene-vinyl acetate copolymer resin (EVA), polyvinyl butyral (PVB), silicon resin, ester resin, olefin resin and the like can be used. However, the present invention is not limited thereto. Therefore, the sealing material 50 may be formed by a method other than lamination using various other materials.

The rear substrate 60 serves to support the photoelectric conversion unit 30 and protect it from an external impact. The rear substrate 60 may have the form of a substrate, a film, a sheet, or the like, and may be made of glass, polymer, or the like. However, the present invention is not limited thereto, and it is also possible that the rear substrate 60 is not provided separately.

The thin film solar cell 100 according to the present embodiment has a structure in which the electrons moving in the direction toward the second electrode 40 (i.e., the vertical direction of the thin film solar cell 100) And a magnetic layer (70) that generates a magnetic field in a second horizontal direction that intersects the first horizontal direction so as to apply a force to the first horizontal direction. As a result, a force is applied to the electrons moving in the direction toward the second electrode 40 in the first horizontal direction, thereby effectively preventing recombination of electrons. As a result, carriers can be lost due to recombination, thereby preventing the current density from being lowered, and consequently, the efficiency of the thin film solar cell 100 can be improved.

Hereinafter, the present invention will be described in more detail with reference to the production examples of the present invention. The following production examples are provided for illustrative purposes only, and the present invention is not limited thereto.

Manufacturing example  One

A triple junction photoelectric conversion portion, a second electrode and a magnetic layer were sequentially formed on a front substrate made of a transparent substrate having a width of 1 cm and a length of 1 cm, and a sealing material and a rear substrate portion were disposed on the front substrate. At this time, the magnetic layer contained Nd-Fe-N based material, and the magnetic field strength was 2 mT.

Manufacturing example  2

A solar cell was manufactured in the same manner as in Production Example 1 except that the magnetic field strength of the magnetic layer was 6 mT.

Comparative Example

A solar cell was manufactured in the same manner as in Production Example 1, except that the magnetic layer was not formed.

The efficiency, current density, open-circuit voltage and fill density of the solar cells according to Production Examples 1 and 2 and Comparative Examples were measured and the results are shown in Table 1 below. In the following results, the difference between the numerical values in Production Examples 1 and 2 and the corresponding numerical values in the comparative example are described.

Production Example 1 Production Example 2 Open-circuit voltage [V] 0 0 Current density [mA] 0.08 0.15 Fullness 0.01 0.01 efficiency[%] 0.09 0.23

Referring to Table 1, it can be seen that the solar cell according to Production Examples 1 and 2 has a similar open-circuit voltage and fill density as the comparative example, and the current density is higher than that of the comparative example, thereby improving the efficiency. Comparing Production Example 1 and Production Example 2, it can be seen that Production Example 2 has a larger current density and greater efficiency than Manufacturing Example 1. [ That is, as the magnetic field intensity of the magnetic layer increases, the current density increases and the efficiency increases.

Features, structures, effects and the like according to the above-described embodiments are included in at least one embodiment of the present invention, and the present invention is not limited to only one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified in other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

100: Thin film solar cell
10: front substrate
20: first electrode
30: Photoelectric conversion section
40: second electrode
50: Seal material
60: rear substrate
70: magnetic layer

Claims (5)

Board;
A first electrode formed on the substrate;
A photoelectric conversion layer formed on the first electrode; And
A magnetic layer for generating a magnetic field for generating a force for moving electrons formed by photoelectric conversion of the photoelectric conversion layer in a horizontal direction
And a thin film solar cell. The method according to claim 1,
Wherein the magnetic layer has a magnetic field strength of 1 mT to 1T. The method according to claim 1,
Wherein the magnetic layer comprises any one of a ferrite-based material, an Sm-Co-based material, and an Nd-Fe-N-based material. The method according to claim 1,
And a second electrode formed on the photoelectric conversion layer,
And the magnetic layer is formed on the second electrode. The method according to claim 1,
Wherein the magnetic layer is formed on the photoelectric conversion layer to perform the function of the second electrode.
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