KR20140134041A - reflector formation method of head lamp for car - Google Patents
reflector formation method of head lamp for car Download PDFInfo
- Publication number
- KR20140134041A KR20140134041A KR1020130053652A KR20130053652A KR20140134041A KR 20140134041 A KR20140134041 A KR 20140134041A KR 1020130053652 A KR1020130053652 A KR 1020130053652A KR 20130053652 A KR20130053652 A KR 20130053652A KR 20140134041 A KR20140134041 A KR 20140134041A
- Authority
- KR
- South Korea
- Prior art keywords
- reflector
- vacuum chamber
- reflective surface
- head lamp
- injecting
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 18
- 230000015572 biosynthetic process Effects 0.000 title abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 28
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000000151 deposition Methods 0.000 claims abstract description 22
- 230000008021 deposition Effects 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000001301 oxygen Substances 0.000 claims abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 8
- 229910052786 argon Inorganic materials 0.000 claims abstract description 7
- 238000006116 polymerization reaction Methods 0.000 claims abstract description 7
- 239000011261 inert gas Substances 0.000 claims abstract description 5
- 239000013077 target material Substances 0.000 claims abstract description 5
- 238000002347 injection Methods 0.000 claims abstract description 3
- 239000007924 injection Substances 0.000 claims abstract description 3
- 238000002294 plasma sputter deposition Methods 0.000 claims abstract description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 230000001737 promoting effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 23
- 239000010408 film Substances 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 238000004383 yellowing Methods 0.000 description 9
- 238000000576 coating method Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
Description
본 발명은 진공환경에서 알루미늄을 코팅한 후 플라즈마 중합 공법과 전구체인 헥사메틸디실록산(HMDSO)을 이용하여 알루미늄 코팅 면에 유기박막인 이산화규소(SiO2) 투명막을 증착할 수 있도록 한 자동차 헤드램프 반사경의 반사면 형성방법에 관한 것이다.
The present invention relates to a method for depositing a silicon dioxide (SiO 2 ) transparent film, which is an organic thin film, on an aluminum coated surface using a plasma polymerization method and a precursor, hexamethyldisiloxane (HMDSO) To a method of forming a reflecting surface of a reflecting mirror.
일반적으로 사출성형 된 자동차 헤드램프의 기초반사경에 반사면을 구현하는 방법은 기초반사경 표면에 자외선(UV)을 이용하여 투명막을 도장하는(이하 '하도 층 형성'이라 함) 단계와; 표면에 하도 층이 형성된 기초반사경을 알루미늄 타켓이 내부에 배치된 진공챔버에 투입하는 단계와; 진공챔버 내에 불활성가스(아르곤 가스 등)를 주입하면서 플라즈마를 발생시켜 알루미늄 타켓의 물질을 스퍼터링 되도록 함으로써 타켓 물질이 기초반사경 반사면에 증착(코팅)되도록 하는 단계와; 진공챔버 내에 아르곤, 헥사메틸디실록산, 그리고 아산화질소(N2O)를 주입하면서 글로우 방전으로 플라즈마를 발생시켜 알루미늄 증착층에 규산(SiOX) 투명막이 증착(이하 '상도 층 형성 단계' 라 함) 되도록 하는 단계로 이루어진다(이하 '종래방법'이라 함).
Generally, a method of implementing a reflection surface on a base reflector of an injection molded automobile headlamp includes Coating a transparent film using ultraviolet rays (hereinafter referred to as " undercoat layer formation "); Placing a basic reflector having a surface layer on its surface into a vacuum chamber having an aluminum target disposed therein; Generating a plasma by injecting an inert gas (such as argon gas) into the vacuum chamber so that the target material is sputtered to deposit (coat) the target material on the basic reflecting mirror reflection surface; (SiO x ) transparent film is deposited on the aluminum deposition layer (hereinafter referred to as "upper layer formation step") by generating a plasma by glow discharge while injecting argon, hexamethyldisiloxane and nitrous oxide (N 2 O) into the vacuum chamber (Hereinafter referred to as "conventional method").
위와 같은 종래방법은 기초반사경의 반사면에 하도 층을 형성하는 것은 반사면의 반사율과 투과율 향상과 알루미늄 증착 층의 부착력을 높일 수 있도록 하기 위한 것이나, 하도 층이 미 경화된 상태에서 알루미늄을 증착할 경우 미 경화 하도 층의 신나 성분이 알루미늄 물질과 만나게 되면 하도 층에 급격하게 산화가 발생하여 황변 현상이 발생하였고, 이러한 황변 현상은 반사면의 반사율과 투과율을 떨어트리는 문제를 야기시켰다. 한편 하도 층을 형성할 때 도장의 정밀성을 확보하지 않으면 고 반사율 등을 기대할 수 없으므로 도장의 정밀성을 확보하여야 하는 애로가 있었고, 설사 정밀성을 확보하였다 하더라도 불량 도장의 배척을 담보할 수 없음은 물론 이물질로 인한 불량도장 우려를 완전하게 제거할 수 없는 문제가 있었다.
In the conventional method as described above, forming the undercoating layer on the reflective surface of the base reflector improves the reflectance and transmittance of the reflective surface and enhances the adhesion of the aluminum vapor deposition layer. However, In this case, when the thinner component of the uncured undercoat layer meets the aluminum material, the undercoat layer is rapidly oxidized and yellowing phenomenon occurs. Such yellowing phenomenon causes a problem of lowering the reflectance and transmittance of the reflective surface. On the other hand, when the undercoat layer is formed, it is difficult to obtain a high reflectance unless the precision of the coating is ensured. Therefore, it is difficult to secure the precision of the coating. Even if the precision is secured, There was a problem that it was impossible to completely eliminate the worry of bad coating due to the problem.
한편 종래방법에서 알루미늄 증착 단계 후 상도 층을 형성하는 것은 알루미늄 증착층의 내구성(박리 등)을 확보하고 또 상기 증착층이 산화되는 것을 방지하기 위해서이나, 상도 층 형성에 사용되는 헥사메틸디실록산(헤드램프 코팅에 주로 사용됨)은 액체상태에서는 대체로 안정된 상태로 유지되지만 증착 단계(공정)가 불안정하면 표면에 황변 현상이 나타나게 되고, 이는 헤드램프 불량을 높이는 중요원인이 되어왔다. 황변 현상이 나타나는 이유는 글로우 방전으로 플라즈마를 발생시켜 상도 층을 형성할 때 헥사메틸디실록산에서 분해된 알킬잔류물들이 불완전 열 분해되므로 헥사메틸디실록산의 카본 잔류물을 효과적으로 줄이지 못하기 때문이다. 따라서 카본 잔류물로 인한 황변 현상을 최소화할 수 있는 기술의 제안이 절실한 실정이다.
On the other hand, in the conventional method, the upper layer is formed after the aluminum deposition step in order to ensure the durability (peeling and the like) of the aluminum deposition layer and to prevent the deposition layer from being oxidized, or to prevent the oxidation of hexamethyldisiloxane (Which is mainly used for head lamp coating) is maintained in a substantially stable state in the liquid state, but when the deposition step (process) is unstable, yellowing appears on the surface, which has been an important cause of increasing the defective head lamp. The reason for the yellowing phenomenon is that since the alkyl residues decomposed in hexamethyldisiloxane are incompletely thermally decomposed when plasma is generated by the glow discharge to form an upper layer, the carbon residues of hexamethyldisiloxane can not be effectively reduced. Therefore, there is a need for a technology that can minimize yellowing due to carbon residues.
본 발명은 종래방법에서 나타나는 문제들을 해결하기 위해 발명된 것으로, 본 발명의 목적은 황변 현상을 일으키는 하도 층 형성 단계를 제거하더라도 반사율과 투과율이 우수한 헤드램프 반사경을 얻을 수 있도록 함에 있다.
An object of the present invention is to provide a headlamp reflector having excellent reflectance and transmittance even when the underlayer forming step causing yellowing is eliminated.
한편 본 발명의 또 다른 목적은 헤드램프 반사경에 상도 층을 형성할 때 황변 현상이 방지되도록 함에 있다.
Another object of the present invention is to prevent yellowing when forming a top layer on a headlamp reflector.
본 발명에 따른 자동차 헤드램프 반사경의 반사면 형성방법은, 자동차 헤드램프의 기초반사경을 사출 성형할 때 반사면을 경면(鏡面)에 가깝게 형성하는 단계와; 기초반사경을 알루미늄 타켓이 내부에 배치된 진공챔버에 투입하는 통상적인 단계와; 진공챔버 내에 불활성가스를 주입하면서 알루미늄 타켓의 물질을 플라즈마 스퍼터링 방식으로 타켓 물질이 기초반사경 경면 반사면에 증착되도록 하는 통상적인 단계와; 진공챔버 내에 아르곤, 헥사메틸디실록산, 그리고 산소를 주입하여 일정시간 동안 플라즈마 중합반응으로 알루미늄 증착층에 이산화규소(SiO2) 투명막이 증착되도록 하는 단계를 포함한 것을 특징으로 하는 것이다.
A method of forming a reflective surface of a vehicle headlamp reflector according to the present invention includes the steps of forming a reflective surface close to a mirror surface when injection molding a basic reflector of an automobile headlamp; A conventional step of injecting a base reflector into a vacuum chamber in which an aluminum target is disposed; A conventional step of causing the target material of the aluminum target to be deposited on the base reflector mirror reflection surface by a plasma sputtering method while injecting an inert gas into the vacuum chamber; And injecting argon, hexamethyldisiloxane, and oxygen into the vacuum chamber to deposit a silicon dioxide (SiO 2 ) transparent film on the aluminum deposition layer by a plasma polymerization reaction for a certain period of time.
종래방법 1, 2에 있어서, UV의 상,하 도장을 하지 않은 채 헥사메틸디실록산을 증착할 때 진공챔버 내에 산소(O2) 60 SCCM, 아산화질소(N2O) 40SCCM, 헥사메틸디실록산 30~40SCCM을 투입하여 2~3분 정도 증착되도록 한 것을 특징으로 하는 것이다.
(O 2 ) 60 SCCM, nitrous oxide (N 2 O) 40 SCCM, and hexamethyldisiloxane in the vacuum chamber when depositing hexamethyldisiloxane without applying the upper and lower coatings of UV in
본 발명은 헤드램프 반사경의 반사면을 형성할 때 반사면을 경면에 가깝게 형성함으로써 반사면에 하도 층 형성 단계를 제거할 수 있게 되어 반사면 형성 공정의 간결성을 달성할 수 있고, 그로 인해 반사면 형성에 필요한 시간 단축, 인력 감소, 원가하락의 효과를 얻을 수 있다.
The present invention can eliminate the underlayer formation step on the reflection surface by forming the reflection surface close to the mirror surface when forming the reflection surface of the headlamp reflector so that the simplicity of the reflection surface formation process can be achieved, It is possible to obtain the effect of shortening the time required for formation, reducing manpower, and lowering the cost.
한편 위 하도 층으로 인한 황변 현상 그리고 도장불량 또는 이물질 불량도 원천적으로 차단할 수 있으므로 반사율과 투과율이 우수한 고 품질의 반사경을 제공할 수 있고, 나아가 하도 층을 형성하지 않더라도 상기 경면에 가까운 반사면으로 인하여 알루미늄 증착층의 내구성(적어도 투명막 형성시와 동일한 내구성)을 확보할 수 있는 효과가 있다.
On the other hand, since yellowing due to the undercoating layer, defective coating or foreign matter can be blocked, a high quality reflector having excellent reflectance and transmittance can be provided. Further, even if the undercoating layer is not formed, The durability of the aluminum deposition layer (at least the same durability as in the formation of the transparent film) can be ensured.
또한 본 발명은 산소의 플라즈마 중합반응로 헥사메틸디실록산이 포함하고 있는 카본 잔류물을 줄일 수 있으므로 카본 잔류물에 의한 황변 현상도 방지할 수 있고, 또 그 카본 잔류물의 감소로 인하여 알루미늄 증착층에 증착되는 규산이 이산화규소로 변형되기 때문에 알루미늄 증착층의 산화를 예방할 수 있는 효과가 있다.
In addition, since the present invention can reduce carbon residues contained in hexamethyldisiloxane by plasma polymerization of oxygen, it is possible to prevent yellowing due to carbon residues. Also, due to reduction of carbon residues, Since the silicic acid deposited is transformed into silicon dioxide, oxidation of the aluminum deposition layer can be prevented.
도 1은 본 발명에 의한 바인딩에너지 측정 그래프
도 2는 본 발명에 의한 투과율 그래프
도 3은 본 발명에 의해 형성된 반사면을 주사전자현미경으로 관찰한 결과이다.BRIEF DESCRIPTION OF THE DRAWINGS FIG.
2 is a graph showing the transmittance graph
Fig. 3 shows the result of observation of a reflection surface formed by the present invention with a scanning electron microscope.
본 발명에 의한 자동차 헤드램프 반사경의 반사면 형성방법은, 하도 층 형성 단계 없이 기초반사경의 반사면에 알루미늄 증착층 형성 방법과 상기 증착층에 형성되는 규산(SiOX)의 투명막을 투명막 증착 단계에서 이산화규소(SiO2) 투명화하는 것을 포함하는 것이다. A method of forming a reflection surface of a vehicle headlamp reflector according to the present invention is a method of forming an aluminum deposition layer on a reflective surface of a base reflector and a transparent film of silicate (SiO x ) formed on the deposition layer, (SiO 2 ) is transparentized.
본 발명은 위 알루미늄 증착층을 형성하기 위해서는, 먼저 자동차 헤드램프의 기초반사경을 사출 성형할 때 반사면을 경면(鏡面)에 가깝게 성형 되도록 하여 상기 반사면에 알루미늄 물질을 증착할 때 알루미늄 증착력(=부착력)이 높아지도록 한다. 이때 알루미늄 물질의 증착은 통상과 같이 알루미늄판을 진공챔버 내에 투입한 다음 진공챔버 내부를 진공환경으로 조성하고 이어서 진공챔버 내에 불활성가스 주입하면서 플라즈마를 발생시켜 그 플라즈마에 의해 알루미늄판이 스퍼터링 되도록 함으로써 달성되는 것이다.In order to form the upper aluminum deposition layer, when the base reflector of the automobile headlamp is injection-molded, the reflecting surface is formed to be close to the mirror surface so that when the aluminum material is deposited on the reflecting surface, = Adhesive force). At this time, the deposition of the aluminum material is accomplished by forming an aluminum plate into a vacuum chamber, forming a vacuum environment inside the vacuum chamber, and then injecting an inert gas into the vacuum chamber to generate a plasma, thereby sputtering the aluminum plate with the plasma will be.
본 발명은 상기 알루미늄 증착층 상에 이산화규소 투명막을 증착하기 위해서는 반사경의 반사면에 알루미늄 증착층을 형성한 후 그 진공환경을 유지한 채 진공챔버 내에 아르곤, 헥사메틸디실록산, 그리고 산소를 투입하여 일정시간동안 플라즈마 중합반응으로 알루미늄 증착 면에 이산화규소(SiO2) 투명막이 증착되도록 하는 것이다.
In order to deposit a silicon dioxide transparent film on the aluminum deposition layer, an aluminum deposition layer is formed on the reflection surface of the reflector, and argon, hexamethyldisiloxane, and oxygen are introduced into the vacuum chamber while maintaining the vacuum environment A silicon dioxide (SiO 2 ) transparent film is deposited on the aluminum deposition surface by a plasma polymerization reaction for a certain period of time.
상기에서 진공챔버 내에 아르곤, 헥사메틸디실록산, 산소를 투입하여 플라즈마를 발생시키면 각 성분들의 플라즈마 중합반응이 일어나고, 상기 중압반응으로 인하여 헥사메틸디실록산에 포함된 카본 일부는 소멸되고 나머지 카본 잔류물은 존재하지만, 이는 산소가 투입됨으로써 다른 화학결합구조를 가지게 되어 투명막이 이산화규소화 되는 것이다. 즉, 상기 헥사메틸디실록산을 구성하는 메틸(CH3)의 탄소(C)는 산소와의 결합에 의해 분해되어 다른 화학결합구조를 가지게 되므로 투명막이 이산화규소화 되는 것이다.When the plasma is generated by introducing argon, hexamethyldisiloxane, and oxygen into the vacuum chamber, a plasma polymerization reaction of the components occurs, and the portion of the carbon contained in the hexamethyldisiloxane disappears due to the intermediate pressure reaction, and the remaining carbon residue However, this is because oxygen is injected to have another chemical bonding structure and the transparent film is sacrificed. That is, the carbon (C) of the methyl (CH 3 ) constituting the hexamethyldisiloxane is decomposed by the bond with oxygen to have another chemical bonding structure, so that the transparent film is converted into the silicon dioxide.
본 발명은 헥사메틸디실록산과 산소와의 중압반응에 근거하여 헥사메틸디실록산과 산소의 이상적인 투입 량을 도출하기 위해 기 백번에 걸쳐 헥사메틸디실록산과 산소의 투입 량을 조절해보았는데, 동일한 량의 헥사메틸디실록산에 산소를 적게 투입할 경우 노이즈가 심하게 나타났음은 물론 헥사메틸디실록산이 포함하고 있는 탄소와 관련된 피크들이 산소를 많이 투입하였을 때보다 상당히 커졌다. 따라서 헥사메틸디실록산 30SCCM에 산소 60SCCM를 투입하여 2분 동안 중압반응시키는 것이 가장 이상적인 투입 량이다라는 것을 도출할 수 있었다.
In the present invention, the amount of hexamethyldisiloxane and oxygen is adjusted over a hundred times to derive an ideal amount of hexamethyldisiloxane and oxygen based on the intermediate pressure reaction between hexamethyldisiloxane and oxygen, Of the hexamethyldisiloxane showed a significant increase in noise, as well as the carbon-related peaks contained in the hexamethyldisiloxane, which were considerably larger than when oxygen was added in a large amount. Therefore, it can be concluded that 60 sccm of oxygen is injected into 30 sccm of hexamethyldisiloxane, and the intermediate pressure is reacted for 2 minutes.
위와 같이 헥사메틸디실록산과 산소의 투입 량과 중압반응 시간을 설정하여 진공챔버 내에서 중압반응시켜 투명막을 증착한 후 내약품성 시험을 실시해보았는데, 흐림, 부풀림, 갈라짐 등과 같은 현상이 나타나지 않았다(아래 표 참조).
As described above, the amount of hexamethyldisiloxane and oxygen was set and the reaction time of the intermediate pressure was set, and a transparent film was deposited by a medium pressure reaction in a vacuum chamber, and then the chemical resistance test was performed. However, no phenomenon such as cloudiness, swelling and cracking See table).
그리고 투명막의 두께(도면 3)가 이상적으로 형성되었음은 물론 바인딩에너지(도면 1) 및 투과율(도 2)도 우수하게 나타났다(아래 표 참조)(Figure 1) and the transmittance (Figure 2) as well as the thickness of the transparent film (Figure 3) were ideally formed (see table below)
Claims (2)
기초반사경을 알루미늄 타켓이 내부에 배치된 진공챔버에 투입하는 통상적인 단계와;
진공챔버 내에 불활성가스를 주입하면서 알루미늄 타켓의 물질을 플라즈마 스퍼터링 방식으로 타켓 물질이 기초반사경 경면 반사면에 증착되도록 하는 통상적인 단계와;
진공챔버 내에 아르곤, 헥사메틸디실록산, 그리고 산소를 주입하여 일정시간 플라즈마 중합반응으로 알루미늄 증착층에 이산화규소(SiO2) 투명막이 증착되도록 하는 단계를 포함한 것을 특징으로 하는 자동차 헤드램프 반사경의 반사면 형성방법.
Forming a reflective surface close to a mirror surface when the base reflector of the automobile headlamp is injection molded;
A conventional step of injecting a base reflector into a vacuum chamber in which an aluminum target is disposed;
A conventional step of causing the target material of the aluminum target to be deposited on the base reflector mirror reflection surface by a plasma sputtering method while injecting an inert gas into the vacuum chamber;
And injecting argon, hexamethyldisiloxane, and oxygen into the vacuum chamber to deposit a silicon dioxide (SiO 2 ) transparent film on the aluminum deposition layer by a plasma polymerization reaction for a certain period of time. / RTI >
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130053652A KR20140134041A (en) | 2013-05-13 | 2013-05-13 | reflector formation method of head lamp for car |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130053652A KR20140134041A (en) | 2013-05-13 | 2013-05-13 | reflector formation method of head lamp for car |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20140134041A true KR20140134041A (en) | 2014-11-21 |
Family
ID=52455289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020130053652A KR20140134041A (en) | 2013-05-13 | 2013-05-13 | reflector formation method of head lamp for car |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20140134041A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220127992A (en) | 2021-03-12 | 2022-09-20 | 주식회사 우성케미칼 | Heat dissipation composite material and reflector for projection lamp manufactured using same |
-
2013
- 2013-05-13 KR KR1020130053652A patent/KR20140134041A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220127992A (en) | 2021-03-12 | 2022-09-20 | 주식회사 우성케미칼 | Heat dissipation composite material and reflector for projection lamp manufactured using same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6107819B2 (en) | Gas barrier film and electronic device using the same | |
| US7880966B2 (en) | Optical article including a layer siox as main component and manufacturing method of the same | |
| Lee et al. | Effects of O2 plasma treatment on moisture barrier properties of SiO2 grown by plasma-enhanced atomic layer deposition | |
| CN113862616B (en) | One-time coating forming method of anti-reflection anti-UV vehicle-mounted display panel | |
| KR100887725B1 (en) | A fabrication method of a color layer, interior and exterior furnishings of vehicle fabricatedby, exterior furnishings of mobile phone fabricatedby and interior and exterior furnishings of electronic products fabricatedby | |
| KR20140134041A (en) | reflector formation method of head lamp for car | |
| WO2007142059A1 (en) | Plastic optical element with gas barrier film, method for manufacturing the plastic optical element, and light pickup device using the plastic optical element with gas barrier film | |
| JP5046074B2 (en) | Method and apparatus for forming optical thin films | |
| Wei et al. | Characteristics of SiOx-containing hard film prepared by low temperature plasma enhanced chemical vapor deposition using hexamethyldisilazane or vinyltrimethylsilane and post oxygen plasma treatment | |
| JP2005508728A (en) | Method for producing a coated plastic object | |
| JP2013227628A (en) | Method of manufacturing resin product and resin product | |
| KR101498748B1 (en) | Edge healing and field repair of plasma coating | |
| JPWO2013168647A1 (en) | Method for producing gas barrier film | |
| JP5452209B2 (en) | Transparent body and method for producing the same | |
| JP5688246B2 (en) | Transparent body and method for producing the same | |
| JP2015166170A (en) | gas barrier laminate | |
| JP5595897B2 (en) | Manufacturing method of resin products | |
| JP5917266B2 (en) | Resin glass and manufacturing method thereof | |
| JP3016668B2 (en) | Silver composite article with transparent film and method for producing the same | |
| JP3325715B2 (en) | Method for manufacturing optical member having antireflection property | |
| US20120288984A1 (en) | Method for operating a vacuum Coating apparatus | |
| EP3781328B1 (en) | Chrome-look pvd layer with improved adhesion | |
| JP6689068B2 (en) | Deposition method of transparent multi-layer system with scratch resistance | |
| JP6173146B2 (en) | Resin glass and manufacturing method thereof | |
| GB2518358A (en) | Glass preforms for molding and a method of molding glass articles |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |