KR20140128999A - Sheet for forming resin film for chips - Google Patents
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- KR20140128999A KR20140128999A KR1020147022175A KR20147022175A KR20140128999A KR 20140128999 A KR20140128999 A KR 20140128999A KR 1020147022175 A KR1020147022175 A KR 1020147022175A KR 20147022175 A KR20147022175 A KR 20147022175A KR 20140128999 A KR20140128999 A KR 20140128999A
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
- C08K7/02—Fibres or whiskers
- C08K7/04—Fibres or whiskers inorganic
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/003—Additives being defined by their diameter
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/016—Additives defined by their aspect ratio
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
[PROBLEMS] To provide heat-dissipating characteristics to a semiconductor device that can be obtained without performing a special process for increasing the number of steps and complicating a process in a semiconductor device manufacturing process.
[MEANS FOR SOLVING PROBLEMS] A sheet for resin film formation according to the present invention has a support sheet and a resin film formation layer formed on the support sheet, wherein the resin film formation layer comprises a binder polymer component (A), a curing component (B) (C), and the resin film forming layer has a thermal diffusivity of 2 x 10 -6 m2 / s or more.
Description
The present invention relates to a resin film-forming sheet for chips capable of efficiently forming a resin film having a high thermal diffusivity on one side of a semiconductor chip and capable of manufacturing a highly reliable semiconductor device.
BACKGROUND ART [0002] In recent years, a semiconductor device using a mounting method called a face down method has been manufactured. In the face-down method, a semiconductor chip (hereinafter simply referred to as " chip ") having an electrode such as a bump is used on a circuit surface, and the electrode is bonded to the substrate. For this reason, the surface (chip side) opposite to the circuit surface of the chip can be exposed.
The backside of the exposed chip can be protected by the organic film. Conventionally, a chip having a protective film made of this organic film is obtained by applying a liquid resin on the back surface of a wafer by a spin coating method, drying and curing it, and cutting the protective film together with the wafer. However, since the thickness precision of the protective film thus formed is not sufficient, the yield of the product may be reduced.
In order to solve the above problem, there is disclosed a sheet for forming a protective film for a chip having a support sheet and a protective film forming layer composed of a heat polymerizable or energy ray-curable component formed on the support sheet (Patent Document 1).
In addition, the semiconductor wafer produced in a large diameter state may be cut (diced) into small pieces of elements (semiconductor chips), and then transferred to a bonding step, which is the next step. At this time, the semiconductor wafer is transferred to the bonding step of the next process after each step of dicing, cleaning, drying, expansing and picking is added in the state of being attached to the adhesive sheet in advance.
Among these processes, various adhesive sheets for dicing and die bonding, which simultaneously have a wafer fixing function and a die bonding function, have been proposed in order to simplify the processes of the pick-up process and the bonding process (for example, see Patent Document 2). The adhesive sheet disclosed in Patent Document 2 enables so-called direct die bonding, and the step of applying the die bonding adhesive can be omitted. For example, by using the adhesive sheet, it is possible to obtain a semiconductor chip in which an adhesive layer is pasted on the back surface, and direct die bonding between the organic substrate and the chip, between the lead frame and the chip, and between the chip and the chip becomes possible . Such an adhesive sheet has fluidity in the adhesive layer, achieves a wafer fixing function and a die adhering function, and has a support sheet and an adhesive layer composed of a heat or energy ray curable component and a binder polymer component formed on the support sheet.
When an adhesive sheet is used for a face-down type chip in which the bump (electrode) forming surface of the chip is die-bonded while opposing the chip mounting portion, the adhesive layer is attached to the bump forming surface, that is, .
BACKGROUND ART [0002] With recent increases in the density of semiconductor devices and the speeding up of semiconductor device manufacturing processes, heat generation from semiconductor devices has become a problem. The heat generation of the semiconductor device causes deformation of the semiconductor device, which causes failure or breakage. It also causes a reduction in the operation speed of the semiconductor device or malfunction thereof, thereby lowering the reliability of the semiconductor device. For this reason, in a high-performance semiconductor device, efficient heat dissipation characteristics are required, and a filler having a good thermal diffusivity is used for a resin film such as a protective film forming layer and an adhesive layer. For example, Patent Document 3 discloses a thermally conductive adhesive film in which a magnetic field is applied to a film composition containing boron nitride powder, and the boron nitride powder in the composition is oriented in a certain direction and solidified.
However, the thermally conductive adhesive film formed using the film composition described in Patent Document 3 has a step of applying a magnetic field in the manufacturing process as described above, and the manufacturing process is complicated. Further, when a resin film is formed using boron nitride powder having an average particle diameter of 1 to 2 占 퐉 as disclosed in the embodiment of Patent Document 3, the resin film forming layer composition can be thickened due to the small particle diameter. When the composition for a resin film forming layer is thickened, the coating ability of the composition for a resin film forming layer is lowered, and it becomes difficult to form a smooth resin film. On the other hand, when the addition amount of the boron nitride powder is decreased in order to avoid the thickening of the resin film forming layer composition, a high thermal diffusivity of the resin film can not be obtained. Therefore, a means for increasing the thermal diffusivity without increasing the amount of the boron nitride powder by a simple manufacturing method has been desired.
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a semiconductor device and a method of manufacturing the semiconductor device, which do not perform special processing, .
As a result of intensive research aimed at solving the above problems, the inventors of the present invention have conceived that the heat dissipation characteristics of a semiconductor device can be improved by setting the thermal diffusivity of the resin film formed on either side of the semiconductor chip to a predetermined range, .
The present invention includes the following points.
[1] A method of manufacturing a semiconductor device, comprising: forming a support sheet and a resin film forming layer formed on the support sheet,
Wherein the resin film forming layer comprises a binder polymer component (A), a curing component (B) and an inorganic filler (C)
Wherein the resin film forming layer has a thermal diffusivity of 2 x 10 < -6 > / s or more.
[2] The resin film-forming sheet for chips according to [1], wherein the resin film-forming layer contains 30 to 60% by mass of the inorganic filler (C).
(3) An inorganic filler (C) comprising an anisotropically shaped particle (C1) having an aspect ratio of 5 or more and an average particle diameter (average particle diameter) of 20 占 퐉 or less and an interfering particle C2). The sheet for forming a resin film for a chip according to [1] or [2]
[4] The sheet for forming a resin film for chips according to [3], wherein the anisotropic particles (C1) have a thermal conductivity in the major axis direction of 60 to 400 W / m · K.
[5] The sheet for forming a resin film for chips as described in [3] or [4], wherein the anisotropic particles (C1) are nitride particles.
[6] The sheet for forming a resin film for chips as described in any one of [3] to [5], wherein the average particle diameter of the interfering particles (C2) is 0.6 to 0.95 times the thickness of the resin film forming layer.
[7] The sheet for forming a resin film for chips according to any one of [3] to [6], wherein the weight ratio of the anisotropic particles (C1) to the interfering particles (C2) is 5: 1 to 1: 5.
[8] The sheet for forming a resin film for chips according to any one of [1] to [7], wherein the resin film-forming layer has a thickness of 20 to 60 μm.
[9] The resin film-forming sheet for chips as described in any one of [1] to [8], wherein the resin film-forming layer functions as a film-like adhesive for fixing the semiconductor chip to a substrate or another semiconductor chip.
[10] The resin film-forming sheet for chips according to any one of [1] to [8], wherein the resin film forming layer is a protective film for a semiconductor wafer or a chip.
[11] A production method of a semiconductor device using the sheet for resin film formation for a chip according to any one of [1] to [10].
By using the resin film forming sheet for chips according to the present invention when forming a resin film on one side of the semiconductor chip, the reliability of the obtained semiconductor device can be improved without performing special treatment on the semiconductor wafer or chip.
Hereinafter, the present invention will be described in more detail with reference to its best mode. The sheet for resin film formation according to the present invention has a support sheet and a resin film formation layer formed on the support sheet.
(Resin film forming layer)
The resin film forming layer includes a binder polymer component (A), a curing component (B), and an inorganic filler (C).
(A) Binder Polymer ingredient
The binder polymer component (A) is used in order to impart sufficient adhesiveness and film forming property (sheet formability) to the resin film forming layer. As the binder polymer component (A), conventionally known acrylic polymers, polyester resins, urethane resins, acrylic urethane resins, silicone resins, rubber-based polymers and the like can be used.
The weight average molecular weight (Mw) of the binder polymer component (A) is preferably 10,000 to 2,000,000, and more preferably 100,000 to 1,500,000. If the weight-average molecular weight of the binder polymer component (A) is too low, the adhesion between the resin film-forming layer and the support sheet tends to increase and the transferability of the resin film-forming layer may be poor. Or the resin film may be peeled off from the chips or the like after the transfer.
An acrylic polymer is preferably used as the binder polymer component (A). The glass transition temperature (Tg) of the acrylic polymer is preferably in the range of -60 to 50 占 폚, more preferably -50 to 40 占 폚, particularly preferably -40 to 30 占 폚. If the glass transition temperature of the acrylic polymer is too low, the peeling force between the resin film-forming layer and the support sheet becomes large to cause transfer failure of the resin film-forming layer. If the glass transition temperature is too high, Or the resin film may be peeled off from the chips or the like after the transfer.
Examples of the monomer constituting the acrylic polymer include a (meth) acrylic acid ester monomer or a derivative thereof. Examples of the alkyl (meth) acrylate having 1 to 18 carbon atoms in the alkyl group include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl 2-ethylhexyl (meth) acrylate and the like; (Meth) acrylate having a cyclic skeleton, specifically, cycloalkyl (meth) acrylate, benzyl (meth) acrylate, isobornyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (Meth) acrylate, dicyclopentenyloxyethyl (meth) acrylate, imide (meth) acrylate and the like; (Meth) acrylate having a hydroxyl group, specifically, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate and the like; And other glycidyl (meth) acrylates having an epoxy group. Among these, an acrylic polymer obtained by polymerizing a monomer having a hydroxyl group is preferable because of its good compatibility with a curable component (B) described below. The acrylic polymer may be copolymerized with acrylic acid, methacrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, or the like.
Further, a thermoplastic resin may be blended as the binder polymer component (A). The thermoplastic resin is a polymer excluding an acrylic polymer, and is blended to maintain the flexibility of the resin film after curing. The thermoplastic resin preferably has a weight average molecular weight of 1,000 to 100,000, more preferably 3,000 to 80,000. By containing the thermoplastic resin within the above range, delamination between the support sheet and the resin film-forming layer can be easily performed at the time of transferring the resin film forming layer to the semiconductor wafer or chip, and further, So that occurrence of voids and the like can be suppressed.
The glass transition temperature of the thermoplastic resin is preferably in the range of -30 to 150 占 폚, more preferably -20 to 120 占 폚. If the glass transition temperature of the thermoplastic resin is too low, the peeling force between the resin film-forming layer and the support sheet becomes large to cause defective transfer of the resin film-forming layer. If too high, there is a fear that the adhesive force between the resin film-
Examples of the thermoplastic resin include polyester resin, urethane resin, acrylic urethane resin, phenoxy resin, silicone resin, polybutene, polybutadiene, polystyrene and the like. These may be used alone or in combination of two or more.
When the thermoplastic resin is contained, it is usually contained in an amount of 1 to 60 parts by mass, preferably 1 to 30 parts by mass based on 100 parts by mass of the total amount of the binder polymer component (A). The above effect can be obtained because the content of the thermoplastic resin falls within this range.
As the binder polymer component (A), a polymer having an energy ray polymerizable group in the side chain (side chain) (energy ray curable polymer) may be used. Such an energy ray curable polymer combines a function as a binder polymer component (A) and a function as a curable component (B) described below. As the energy ray polymerizable group, it is only necessary to have the energy ray polymerizable functional group contained in the energy ray polymerizable compound described later. Examples of the polymer having an energy ray polymerizable group in the side chain include polymers prepared by reacting a polymer having a reactive functional group X on its side chain with a functional group Y capable of reacting with the reactive functional group X and a low molecular weight compound having an energy ray polymerizable group have.
(B) a curable component
The curable component (B) may use a thermosetting component and a thermosetting agent or an energy ray polymerizable compound. They may be used in combination. As the thermosetting component, for example, an epoxy resin is preferable.
As the epoxy resin, conventionally known epoxy resins can be used. Specific examples of the epoxy resin include polyfunctional epoxy resin and biphenyl compound, bisphenol A diglycidyl ether or hydrogenated product thereof, orthocresol novolac epoxy resin, dicyclopentadiene type epoxy resin, biphenyl type epoxy resin, bisphenol Epoxy compounds having two or more functional groups in the molecule, such as epoxy resins of type A, bisphenol F type, and phenylene skeleton type epoxy resins. These may be used alone or in combination of two or more.
When a thermosetting component and a thermosetting agent are used as the curing component (B), the resin film forming layer preferably contains 1 to 1500 parts by mass of the thermosetting component relative to 100 parts by mass of the binder polymer component (A) 3 to 1200 parts by mass. If the content of the thermosetting component is less than 1 part by mass, sufficient adhesion may not be obtained. If the content is more than 1,500 parts by mass, the peeling force between the resin film forming layer and the support sheet becomes high and transfer failure of the resin film forming layer may occur.
The thermosetting agent functions as a curing agent for a thermosetting component, particularly an epoxy resin. Preferable examples of the heat curing agent include compounds having two or more functional groups capable of reacting with an epoxy group in one molecule. Examples of the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxyl group and an acid anhydride. Of these, phenolic hydroxyl groups, amino groups, acid anhydrides and the like are preferable, and phenolic hydroxyl groups and amino groups are more preferable.
Specific examples of the phenol-based curing agent include polyfunctional phenol resin, biphenol, novolac phenol resin, dicyclopentadiene phenol resin, xylocophenol resin, and aralkylphenol resin. A specific example of the amine-based curing agent includes DICY (dicyandiamide). These may be used alone or in combination of two or more.
The content of the thermosetting agent is preferably 0.1 to 500 parts by mass, more preferably 1 to 200 parts by mass with respect to 100 parts by mass of the thermosetting component. If the content of the thermosetting agent is too small, adhesion may not be obtained due to insufficient curing. If the content is excessive, the moisture absorption rate of the resin film forming layer is increased, which may lower the reliability of the semiconductor device.
The energy ray polymerizable compound includes an energy ray polymerizable group, and when irradiated with an energy ray such as ultraviolet ray or electron ray, it is polymerized and cured. Specific examples of such an energy ray polymerizable compound include trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4- Acrylates such as butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, urethane acrylate oligomer, epoxy modified acrylate, polyether acrylate and itaconic acid oligomer Rate compound. Such a compound has at least one polymerizable double bond in the molecule, and usually has a weight average molecular weight of about 100 to 30000, preferably about 300 to 10000. When an energy ray polymerizable compound is used as the curable component (B), the resin film forming layer preferably contains 1 to 1500 parts by mass of the energy ray polymerizable compound relative to 100 parts by mass of the binder polymer component (A) Preferably 3 to 1200 parts by mass.
(C) Weapons filler
The inorganic filler (C) is preferably capable of improving the thermal diffusivity of the resin film forming layer. The inorganic filler (C) is added to the resin film forming layer to improve the heat diffusivity, and it becomes possible to efficiently diffuse the heat generated by the semiconductor device mounted with the resin film forming layer. It is also possible to adjust the coefficient of thermal expansion of the resin film after curing and to improve the reliability of the semiconductor device by optimizing the thermal expansion coefficient of the resin film after curing for an adherend such as a semiconductor chip, have. Further, it becomes possible to reduce the moisture absorptivity of the resin film after curing, to maintain the adhesiveness as a resin film at the time of heating, and to improve the reliability of the semiconductor device. The heat diffusivity is a value obtained by dividing the thermal conductivity of the resin film by the product of the specific heat and the specific gravity of the resin film, and indicates that the heat radiation characteristic is excellent as the thermal diffusivity is large.
Specific examples of the inorganic filler C include silica (1.3W / m 占 K), zinc oxide (54W / m 占)), magnesium oxide (59W / m 占)), alumina (38W / m 占)) Particles such as silicon carbide (100 to 350 W / m 占 21) and boron nitride (30 to 200 W / m 占)), spherical beads, single crystal fibers and glass fibers . The numerical values in parentheses indicate the thermal conductivity.
The inorganic filler (C) preferably includes the anisotropic particles (C1) and the interfering particles (C2). In the case where only the anisotropic particles C1 are used as the inorganic filler C, due to stress or gravity applied to the anisotropic particles C1 during the manufacturing process (e.g., coating step) of the resin film forming layer, The ratio of the anisotropic particles which become substantially equal to the width direction and the flow direction of the forming layer becomes high, and it may be difficult to obtain a resin film forming layer having an excellent thermal diffusivity. The anisotropic particles exhibit a good thermal diffusivity in the major axis direction. Therefore, in the resin film forming layer, the ratio of the anisotropic particles whose thickness direction in the longitudinal direction of the resin film forming layer becomes almost the same becomes higher, so that the heat generated in the semiconductor chip is easily diffused through the resin film forming layer. By using the anisotropic particles (C1) and the interfering particles (C2) in combination as the inorganic filler (C), in the production process of the resin film forming layer, the major axis direction of the anisotropic particles is almost the same as the width direction or flow direction And the ratio of the anisotropic particles whose thickness direction in the resin film-forming layer is almost the same can be increased. As a result, a resin film forming layer having an excellent thermal diffusivity can be obtained. This is because the intervening particles C2 exist in the resin film forming layer and the anisotropic particles C1 are standing up against the interfering particles C2 so that the thickness directions of the resin film forming layer and the major axis direction of the anisotropic particles are almost the same It is caused by being done. In the present invention, specifically, " the longitudinal direction of the anisotropic particles and the thickness direction of the resin film forming layer are substantially the same " means that the major axis direction of the anisotropic particles is in the range of -45 to 45 degrees Range.
( C1 ) Anisotropic particles
The anisotropic particles (C1) have anisotropy, and the specific shape thereof is preferably at least one shape selected from the group consisting of a plate shape, a needle shape, and a scaly shape. Preferred examples of the anisotropic particles (C1) include nitride particles, and examples of the nitride particles include particles of boron nitride, aluminum nitride, silicon nitride and the like. Among these, boron nitride particles which are likely to have good thermal conductivity are preferable.
The average particle diameter of the anisotropic particles (C1) is 20 占 퐉 or less, preferably 5 to 20 占 퐉, more preferably 8 to 20 占 퐉, and particularly preferably 10 to 15 占 퐉. The average particle diameter of the anisotropic particles (C1) is preferably smaller than the average particle diameter of the interfering particles (C2) described later. By adjusting the average particle diameter of the anisotropic particles (C1) as described above, the thermal diffusivity and film formability of the resin film forming layer are improved and the filling rate of the anisotropic particles (C1) in the resin film forming layer is improved. The average particle diameter of the anisotropic particles (C1) is determined by measuring the major axis diameter of 20 arbitrarily selected anisotropic particles (C1) selected by electron microscopy and calculating the number average particle diameter by the arithmetic average value.
The particle size distribution (CV value) of the anisotropic particles (C1) is preferably 5 to 40%, more preferably 10 to 30%. By setting the particle size distribution of the anisotropic particles (C1) within the above range, it is possible to achieve efficient and uniform thermal conductivity. The CV value is an index of the deviation of the particle diameter. The larger the CV value, the larger the deviation of the particle diameter. When the CV value is small, since the particle diameters are coincident with each other, the amount of particles having a small size entering the gap between the particles and the particles becomes small, and it becomes difficult to fill the inorganic filler C more densely. As a result, It is difficult to obtain a resin film-forming layer having the above-mentioned structure. On the contrary, when the CV value is large, the particle diameter of the inorganic filler (C) may be larger than the thickness of the resin film-formed layer, resulting in irregularities on the surface of the resin film-formed layer, . Also, if the CV value is too large, it may become difficult to obtain a thermally conductive composition having uniform performance. The particle size distribution (CV value) of the anisotropic particles (C1) was measured by electron microscope to measure the long axis diameter of 200 or more particles, and the standard deviation of the major axis diameter was determined. The average particle diameter (Standard deviation of major axis diameter) / (mean particle diameter).
The aspect ratio of the anisotropic particles (C1) is 5 or more, preferably 5 to 30, more preferably 8 to 20, and still more preferably 10 to 15. The aspect ratio is represented by (long axis average diameter) / (short axis average diameter) of the anisotropic particles C1. The short axis average diameter and the major axis number average diameter are the number average particle diameters calculated as the respective arithmetic mean values by measuring short axis diameter and major axis diameter of twenty randomly selected anisotropic particles by a transmission electron microscope photograph. By setting the aspect ratio of the anisotropically shaped particles C1 within the above range, it is possible to prevent the flow direction of the major axis of the anisotropic particles C1 and the flow direction of the resin film- So that the anisotropic particles C1 can form an efficient heat conduction path in the thickness direction of the resin film forming layer to improve the thermal diffusivity.
The specific gravity of the anisotropic particles (C1) is preferably 2 to 4 g / cm3, more preferably 2.2 to 3 g / cm3.
The thermal conductivity of the anisotropic particles (C1) in the major axis direction is preferably 60 to 400 W / m · K, more preferably 100 to 300 W / m · K. By using such anisotropic particles, the formed thermally conductive path has a high thermal conductivity, and as a result, a resin film-forming layer having a high thermal diffusivity can be obtained.
( C2 ) Interference particles
The shape of the interfering particles C2 is not particularly limited as long as it is a shape that interferes with the longitudinal direction of the anisotropic particles C1 and the width direction of the resin film forming layer or the flow direction (direction parallel to the resin film forming layer) , The specific shape thereof is preferably circular. Examples of the preferable interfering particles (C2) include silica particles and alumina particles, and alumina particles are particularly preferable.
The average particle diameter of the interfering particles (C2) is more than 20 占 퐉, preferably not less than 20 占 퐉 and not more than 50 占 퐉, more preferably not less than 20 占 퐉 and not more than 30 占 퐉. By setting the average particle diameter of the interfering particles (C2) within the above range, the thermal diffusivity and film forming property of the resin film forming layer are improved and the filling rate of the interfering particles (C2) in the resin film forming layer is improved. Further, the anisotropic particles have a large specific surface area per unit volume, and the viscosity of the composition for the resin film forming layer is liable to be increased. When a filler other than anisotropic particles having a larger specific surface area and an average particle diameter of 20 占 퐉 or less is added thereto, the viscosity of the composition for a resin film forming layer is further increased to make it difficult to form a resin film, There is a need to dilute it, and the productivity may be lowered. The average particle diameter of the interfering particles (C2) is determined by measuring the long axis diameter of 20 randomly selected interfering particles (C2) selected by an electron microscope, and calculating the number average particle diameter as the arithmetic mean value.
The average particle diameter of the interfering particles (C2) is preferably 0.6 to 0.95 times, more preferably 0.7 to 0.9 times, the thickness of the resin film forming layer described later. When the average particle diameter of the interfering particles (C2) is less than 0.6 times the thickness of the resin film forming layer, the ratio of the anisotropic particles (C1) in which the major axis direction becomes almost the same as the width direction or flow direction of the resin film forming layer, It is difficult to form an efficient heat conduction path and the thermal diffusivity may be lowered. If the average particle diameter of the interfering particles (C2) exceeds 0.95 times the thickness of the resin film-forming layer, unevenness may be generated on the surface of the resin film-forming layer to deteriorate the adhesion of the resin film-forming layer. Further, it may be difficult to obtain a thermally conductive resin film forming layer composition having uniform performance.
The particle size distribution (CV value) of the interfering particles (C2) is preferably 5 to 40%, more preferably 10 to 30%. By setting the particle size distribution of the interfering particles (C2) to the above range, it is possible to achieve efficient and uniform thermal conductivity. When the CV value is small, since the particle diameters are coincident with each other, the amount of small-sized particles entering the gaps between the particles and the particles becomes small, and the filling of the inorganic filler C becomes denser, It may be difficult to obtain a resin film forming layer having a thermal conductivity. Conversely, when the CV value is large, the particle diameter of the inorganic filler (C) may be larger than the thickness of the formed film-formed resin layer, resulting in irregularities on the surface of the resin film- It can fall. Also, if the CV value is too large, it may become difficult to obtain a thermally conductive composition having uniform performance. The particle size distribution (CV value) of the interfering particles (C2) was measured by electron microscope to measure the major axis diameter of 200 or more particles, and the standard deviation of the major axis diameter was determined. Using the above average particle diameter (Standard deviation of the major axis diameter) / (mean particle diameter).
The content of the inorganic filler (C) in the resin film-forming layer is preferably 30 to 80 mass%, more preferably 40 to 70 mass%, and particularly preferably 50 to 70 mass%, based on the total solid content constituting the resin film- 60% by mass. By setting the content ratio of the inorganic filler (C) within the above range, an efficient heat conduction path can be formed and the heat diffusion rate can be improved.
When the anisotropic particles (C1) and the interfering particles (C2) are contained as the inorganic filler (C), the weight ratio of the anisotropic particles (C1) to the interfering particles (C2) is preferably 5: 1 to 1: 5, More preferably from 4: 1 to 1: 4.
By setting the weight ratio of the anisotropically shaped particles (C1) to the interfering particles (C2) within the above ranges, the ratio of the anisotropically shaped particles (C1) whose thickness direction in the longitudinal direction of the resin film forming layer becomes almost the same can be increased. As a result, the thermal diffusivity of the resin film forming layer can be improved. Further, the thickening of the composition for a resin film forming layer can be suppressed, and a smooth resin film can be formed.
The concentration of the inorganic filler (C) in the resin film forming layer is preferably 30 to 50% by volume, more preferably 35 to 45% by volume.
Other components
The resin film forming layer may contain the following components in addition to the binder polymer component (A), the curing component (B) and the inorganic filler (C).
(D) Colorant
A colorant (D) may be added to the resin film forming layer. By mixing the coloring agent, it is possible to prevent the malfunction of the semiconductor device caused by the infrared rays or the like generated in the peripheral device when the semiconductor device is put into the device. This effect is particularly useful when a resin film is used as a protective film. As the colorant, organic or inorganic pigments and dyes are used. Among them, a black pigment is preferable in terms of electromagnetic wave shielding and infrared rays. Examples of the black pigment include carbon black, iron oxide, manganese dioxide, aniline black, activated carbon, and the like, but are not limited thereto. From the viewpoint of enhancing the reliability of the semiconductor device, carbon black is particularly preferable. The blending amount of the colorant (D) is preferably 0.1 to 35 parts by mass, more preferably 0.5 to 25 parts by mass, and particularly preferably 1 to 15 parts by mass, relative to 100 parts by mass of the total solid content constituting the resin film- .
(E) Curing accelerator
The curing accelerator (E) is used to adjust the curing rate of the resin film forming layer. The curing accelerator (E) is preferably used particularly when a thermosetting component and a thermosetting agent are used as the curing component (B), and an epoxy resin and a thermosetting agent are used in combination.
Preferred curing accelerators include tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol and tris (dimethylaminomethyl) phenol; 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl- Imidazoles such as hydroxymethylimidazole; Organic phosphines such as tributylphosphine, diphenylphosphine and triphenylphosphine; And tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate. These may be used alone or in combination of two or more.
The curing accelerator (E) is contained in an amount of preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, based on 100 parts by mass of the total amount of the thermosetting component and the thermosetting agent. By containing the curing accelerator (E) in an amount within the above range, it has excellent adhesiveness even when exposed to high temperature and high humidity, and can achieve high reliability even when exposed to severe reflow conditions. If the content of the curing accelerator (E) is small, sufficient adhesion can not be obtained due to insufficient curing. If the curing accelerator has excess polarity, the curing accelerator moves to the adhesion interface side in the resin film forming layer under high temperature and high humidity, Thereby reducing the reliability of the apparatus.
(F) Coupling agent
A coupling agent (F) having a functional group reacting with an inorganic substance and a functional group reacting with an organic functional group may be used for improving adhesion, adhesiveness and / or cohesiveness of a resin film forming layer to a chip. Further, by using the coupling agent (F), it is possible to improve the water resistance of the resin film obtained by curing the resin film forming layer without deteriorating the heat resistance of the resin film.
As the coupling agent (F), a compound in which a functional group reactive with the organic functional group is a group which reacts with a functional group contained in the binder polymer component (A), the curing component (B) or the like is preferably used. As the coupling agent (F), a silane coupling agent is preferable. Examples of such coupling agents include? -Glycidoxypropyltrimethoxysilane,? -Glycidoxypropylmethyldiethoxysilane,? - (3,4-epoxycyclohexyl) ethyltrimethoxysilane,? - (methacryloxypropyl Aminopropyltrimethoxysilane, N-6- (aminoethyl) - gamma -aminopropyltrimethoxysilane, N-6- (aminoethyl) - gamma -aminopropylmethyldiethoxysilane , N-phenyl-γ-aminopropyltrimethoxysilane, γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, bis Methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriacetoxysilane, imidazolylsilane, and the like can be exemplified. These may be used alone or in combination of two or more.
The coupling agent (F) is used in an amount of usually 0.1 to 20 parts by mass, preferably 0.2 to 10 parts by mass, more preferably 0.3 to 5 parts by mass, per 100 parts by mass of the total of the binder polymer component (A) and the curing component (B) . If the content of the coupling agent (F) is less than 0.1 part by mass, the above effects may not be obtained. If the content of the coupling agent (F) is more than 20 parts by mass, there is a possibility of causing outgas.
(G) Light curing Initiator
When the resin film forming layer contains an energy ray polymerizable compound as the curable component (B), the energy ray polymerizable compound is cured by irradiating with an energy ray such as ultraviolet rays. At this time, by containing the photopolymerization initiator (G) in the composition constituting the resin film forming layer, the polymerization curing time and the irradiation dose of light can be reduced.
Specific examples of such a photopolymerization initiator (G) include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate , Benzoin dimethyl ketal, 2,4-diethyl thioxanthone,? -Hydroxycyclohexyl phenyl ketone, benzyl diphenyl sulfide, tetramethyl thiuram monosulfide, azobisisobutyronitrile, benzyl, dibenzyl, di 2-methyl-1- [4- (1-methylvinyl) phenyl] propanone, 2,4,6-trimethylbenzoyldiphenylphosphine oxide and? - cholanthraquinone, and the like. The photopolymerization initiator (G) may be used singly or in combination of two or more.
The blending ratio of the photopolymerization initiator (G) is preferably 0.1 to 10 parts by mass, more preferably 1 to 5 parts by mass, per 100 parts by mass of the energy ray polymerizable compound. If the amount is less than 0.1 part by mass, satisfactory transferability may not be obtained due to insufficient photopolymerization. If the amount is more than 10 parts by mass, residues which do not contribute to photopolymerization may be generated, and the curing property of the resin film forming layer may become insufficient.
(H) Cross-linking agent
A crosslinking agent may be added to adjust the initial adhesion and cohesion of the resin film forming layer. Examples of the crosslinking agent (H) include organic polyvalent isocyanate compounds and organic polyvalent organic compounds.
Examples of the organic polyisocyanate compound include an aromatic polyisocyanate compound, an aliphatic polyisocyanate compound, an alicyclic polyisocyanate compound, a trimer of these organic polyisocyanate compounds, and a terminal isocyanate urethane prepolymer obtained by reacting these organic polyisocyanate compounds with a polyol compound. .
Specific examples of the organic polyisocyanate compound include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane- Diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexyl Methane-2,4'-diisocyanate, trimethylolpropane adduct, tolylene diisocyanate and lysine isocyanate.
Specific examples of the organic polyhydric compound include N, N'-diphenylmethane-4,4'-bis (1-aziridinecarboxamide), trimethylolpropane-tri- Methane-tri-? - aziridinyl propionate and N, N'-toluene-2,4-bis (1-aziridine carboxamide) triethylene melamine.
The crosslinking agent (H) is used in an amount of usually 0.01 to 20 parts by mass, preferably 0.1 to 10 parts by mass, and more preferably 0.5 to 5 parts by mass based on 100 parts by mass of the binder polymer component (A).
(I) General purpose additives
The resin film-forming layer may be blended with various additives in addition to the above. Examples of the various additives include a leveling agent, a plasticizer, an antistatic agent, an antioxidant, an ion scavenger, a gettering agent, and a chain transfer agent.
The resin film forming layer composed of each of the above components has adhesiveness and curability. In the uncured state, the resin film forming layer is pressed to the semiconductor wafer, chip, or the like and pressed to be bonded. And after curing, a resin film having a high impact resistance can be finally applied, and also the adhesive strength is excellent, so that it can have a sufficient protection function even under severe high temperature and high humidity conditions. In the present invention, it is preferable that the resin film-forming layer is used as a film-like adhesive for fixing a semiconductor chip to a substrate or another semiconductor chip, or a protective film for a semiconductor wafer or a semiconductor chip. The resin film-forming layer may have a single-layer structure or a multi-layer structure provided that it includes at least one layer containing the above components.
Thermal diffusivity of the resin film-forming layer is 2 × 10 -6 and ㎡ / s or more, preferably 2.5 × 10 -6 ~ 5 × 10 -6 ㎡ / s, more preferably from 4 × 10 -6 ~ 5 × 10 - 6 m 2 / s. The thermal diffusivity of the resin film-forming layer (resin film) after curing is preferably 2 x 10 -6 m2 / s or more, more preferably 2.5 x 10-6 to 5 x 10-6 m2 / s, Is 4 x 10 -6 to 5 x 10 -6 m 2 / s. If the thermal diffusion coefficient of the resin film forming layer is less than 2 x 10 -6 m 2 / s, the semiconductor device may be deformed due to heat generation of the semiconductor device, which may cause breakdown or failure, And the reliability of the semiconductor device can be lowered. By setting the thermal diffusivity of the resin film forming layer or the resin film within the above range, it is possible to manufacture a semiconductor device having excellent reliability by improving the heat radiation characteristics of the semiconductor device.
The thermal conductivity of the resin film-forming layer (resin film) after curing is preferably 4 to 15 W / m · K, more preferably 5 to 10 W / m · K Is more preferable.
(Sheet for resin film formation for chips)
The resin film forming layer is obtained by applying and drying a composition for forming a resin film, which is obtained by mixing each of the above components in an appropriate solvent in an appropriate solvent on a support sheet. Further, the support sheet may be formed by coating a composition for forming a resin film on another process film, drying it, and transferring the film onto a support sheet.
The resin film-forming sheet for chips according to the present invention is formed such that the resin film-forming layer can be peeled off on the support sheet. The shape of the sheet for resin film formation for chips according to the present invention can take any shape such as a tape shape, a label shape, and the like.
Examples of the support sheet include a polyethylene film, a polypropylene film, a polybutene film, a polybutadiene film, a polymethylpentene film, a polyvinyl chloride film, a vinyl chloride copolymer film, a polyethylene terephthalate film, a polyethylene naphthalate film, (Meth) acrylic acid copolymer film, an ethylene / (meth) acrylic acid ester copolymer film, a polystyrene film, a polycarbonate film, a polyimide film , A fluororesin film or the like is used. These crosslinked films are also used. Or may be a laminated film thereof. Further, films colored thereon may also be used.
In the sheet for forming a resin film for a chip of the present invention, the support sheet is peeled off at the time of use, and the resin film forming layer is transferred to a semiconductor wafer or a chip. In particular, when the support sheet is peeled off after thermosetting of the resin film-forming layer, the support sheet needs to withstand the heating at the time of thermal curing of the resin film forming layer, so that an annealed polyethylene terephthalate film having excellent heat resistance, a polyethylene naphthalate film , A polymethylpentene film, and a polyimide film are preferably used. The surface tension of the support sheet is preferably 40 mN / m or less, more preferably 37 mN / m or less, particularly preferably 35 mN / m or less, in order to facilitate peeling between the resin film forming layer and the support sheet. The lower limit value is usually about 25 mN / m. Such a support sheet having a low surface tension can be obtained by appropriately selecting a material, and can also be obtained by applying a releasing agent to the surface of the support sheet and carrying out a peeling treatment.
As the releasing agent used in the peeling treatment, an alkyd type, a silicone type, a fluorine type, an unsaturated polyester type, a polyolefin type, a wax type, or the like is used, but an alkyd type, a silicone type and a fluorine type releasing agent are particularly preferable because they have heat resistance.
In order to peel the surface of the sheet using the above releasing agent, the releasing agent is directly applied as a solvent or diluted with solvent or emulsified and then applied by a gravure coater, a Meyer bar coater, an air knife coater, a roll coater, It may be formed by electron beam hardening, wet lamination, dry lamination, hot melt lamination, melt extrusion lamination, coextrusion, or the like.
The resin film forming layer may be laminated on a releasable pressure-sensitive adhesive layer provided on the support sheet. The re-peelable pressure-sensitive adhesive layer may be of a weakly adhesive nature having an adhesive strength sufficient to peel the resin film forming layer, or may be of an energy ray curability in which the adhesive strength is lowered by energy ray irradiation. In the case of using an exfoliative pressure-sensitive adhesive layer of an energy radiation curable property, the region where the resin film forming layer is laminated is previously irradiated with energy rays to reduce the tackiness, while the other regions are not irradiated with energy rays, The adhesive force may be kept high for the purpose of adhesion to a jig or a jig. In order to prevent the energy ray irradiation from being performed only in the other area, for example, an energy ray shielding layer may be provided by printing or the like in an area corresponding to another area of the substrate, and the energy ray irradiation may be performed on the substrate side. The releasable pressure-sensitive adhesive layer can be formed by a variety of conventionally known pressure-sensitive adhesives (for example, general-purpose pressure-sensitive adhesives such as rubber, acrylic, silicone, urethane, and vinyl ether adhesives). The thickness of the re-peelable pressure-sensitive adhesive layer is not particularly limited, but is usually 1 to 50 占 퐉, preferably 3 to 20 占 퐉.
The thickness of the support sheet is usually 10 to 500 占 퐉, preferably 15 to 300 占 퐉, and particularly preferably 20 to 250 占 퐉.
The thickness of the resin film forming layer is preferably 20 to 60 占 퐉, more preferably 25 to 50 占 퐉, and particularly preferably 30 to 45 占 퐉. The thickness of the resin film forming layer is preferably 2 to 5 mu m larger than the average particle diameter of the interfering particles (C2).
In addition, in order to protect the resin film forming layer before use of the resin film forming sheet for chips, a lightly peeling film may be laminated on the upper surface of the resin film forming layer separately from the supporting sheet.
The resin film-forming layer of the resin film-forming sheet for chips can function as a film-like adhesive. The film-shaped adhesive is usually pasted on one side of a semiconductor wafer, cut into individual chips through a dicing process, and then placed (die-bonded) on a substrate or the like, and is used for adhering and fixing a semiconductor chip through a curing process . Such a film-shaped adhesive may be referred to as a die attachment film. The semiconductor device using the resin film forming layer of the present invention as a film-like adhesive has excellent heat dissipation characteristics, so that the decrease in reliability can be suppressed.
The resin film-forming layer of the resin film-forming sheet for chips may be a protective film. The resin film forming layer is attached to the back surface of a semiconductor wafer or a semiconductor chip for a facedown chip and has a function of protecting the semiconductor chip as an alternative to the sealing resin by being cured by appropriate means. In the case of sticking to a semiconductor wafer, since the protective film has a function of reinforcing the wafer, damage or the like of the wafer can be prevented. In addition, the semiconductor device using the resin film-forming layer as a protective film in the present invention has excellent heat dissipation characteristics, so that deterioration in reliability can be suppressed.
(Manufacturing Method of Semiconductor Device)
Next, a method of using a sheet for forming a resin film for chips according to the present invention will be described by taking the case where the sheet is applied to the production of a semiconductor device.
It is preferable that the method for manufacturing a semiconductor device according to the present invention obtains a semiconductor chip having a resin film formation layer on the back surface of a semiconductor wafer on which a circuit is formed on a surface thereof and a resin film on the back surface of the resin film formation layer. The resin film is preferably a protective film of a semiconductor wafer or a semiconductor chip. The method for manufacturing a semiconductor chip according to the present invention preferably further comprises the following steps (1) to (3), and the steps (1) to (3) are carried out in an arbitrary order .
Step (1): The resin film-forming layer or the resin film and the supporting sheet are peeled off,
Step (2): Curing the resin film-forming layer to obtain a resin film,
Step (3): Dicing a semiconductor wafer and a resin film forming layer or a resin film.
The semiconductor wafer may be a silicon wafer or a compound semiconductor wafer such as gallium and arsenic. The formation of a circuit on the surface of the wafer can be carried out by various methods including a conventionally used method such as an etching method and a lift-off method. Subsequently, the opposite surface (back surface) of the circuit surface of the semiconductor wafer is ground. The grinding method is not particularly limited, and may be ground by a known means using a grinder or the like. When grinding the back surface, an adhesive sheet called a surface protection sheet is attached to the circuit surface to protect the circuit on the surface. The back side grinding is performed by grinding the back side of the wafer on which the circuit is not formed by using a chuck table or the like while grinding the circuit side (i.e., the surface protective sheet side) of the wafer. The thickness after the wafer grinding is not particularly limited, but is usually about 20 to 500 mu m.
Thereafter, if necessary, the crushed layer generated during the back grinding is removed. The removal of the crushed layer is carried out by chemical etching, plasma etching or the like.
Subsequently, the resin film forming layer of the resin film forming sheet for chips is attached to the back surface of the semiconductor wafer. Thereafter, the steps (1) to (3) are carried out in an arbitrary order. The details of this process are described in Japanese Patent Laid-Open No. 2002-280329. As an example, the case of carrying out in the order of steps (1), (2), and (3) will be described.
First, a resin film-forming layer of the resin film-forming sheet for chips is pasted on the back surface of a semiconductor wafer on which a circuit is formed. Subsequently, the support sheet is peeled from the resin film forming layer to obtain a laminated body of the semiconductor wafer and the resin film forming layer. Then, the resin film-forming layer is cured to form a resin film on the entire surface of the wafer. When a thermosetting component and a thermosetting agent are used as the curing component (B) in the resin film forming layer, the resin film forming layer is cured by thermal curing. When the energy ray-polymerizable compound is blended as the curable component (B), curing of the resin film-forming layer can be carried out by energy ray irradiation. When the thermosetting component and the thermosetting agent and the energy ray- And curing by irradiation with energy rays may be performed at the same time or sequentially. Examples of the energy ray to be irradiated include ultraviolet (UV) light or electron beam (EB), and ultraviolet light is preferably used. As a result, a resin film made of a cured resin is formed on the back surface of the wafer, and the strength is improved as compared with the case where the wafer alone is used, so that breakage during handling of the thinned wafer can be reduced. In addition, a resin film having a high thermal diffusivity is formed, and excellent heat radiation characteristics are imparted. In addition, the uniformity of the thickness of the resin film is superior to the coating method in which the coating liquid for the resin film is applied directly to the back surface of the wafer or chip.
Subsequently, the laminated body of the semiconductor wafer and the resin film is diced for each circuit formed on the wafer surface. Dicing is performed to cut the wafer and the resin film together. The dicing of the wafer is carried out by a conventional method using a dicing sheet. As a result, a semiconductor chip having a resin film on the back surface is obtained.
Finally, a semiconductor chip having a resin film on the back surface is obtained by picking up the diced chip by a general means such as a collet. According to the present invention as described above, it is possible to easily form a resin film having a high thickness uniformity on the back surface of a chip, and it becomes difficult for a dicing step and a crack after packaging to occur. Further, since the obtained semiconductor device is provided with excellent heat radiation characteristics, the reliability thereof can be suppressed from being lowered. Then, the semiconductor device can be manufactured by mounting the semiconductor chip on a predetermined base in face-down manner. The semiconductor device may also be manufactured by bonding a semiconductor chip having a resin film on its back surface to another member such as a die pad portion or another semiconductor chip (chip mounting portion).
A method for manufacturing a semiconductor device using a resin film forming sheet for chips according to the present invention is characterized in that a resin film forming layer of the sheet is attached to a semiconductor wafer and the semiconductor wafer is diced into a semiconductor chip, And peeling off the resin film forming layer from one side of the resin film forming layer to peel off the resin film forming layer from the supporting sheet and placing the semiconductor chip on a die pad or on a separate semiconductor chip with the resin film forming layer interposed therebetween . As an example, a manufacturing method of attaching a resin film forming layer to the back surface of a chip will be described below.
First, the ring frame and the back side of the semiconductor wafer are placed on the resin film-formed layer of the resin film-forming sheet for chips according to the present invention, and the semiconductor wafer is fixed by light pressure. In this case, when the composition does not have a tuck property at room temperature, it may be suitably heated (preferably, it is not limited to 40 to 80 ° C). Subsequently, when the energy ray-polymerizable compound is blended as the curing component (B) in the resin film-forming layer, the energy ray is irradiated from the side of the support sheet to the resin film forming layer to preliminarily cure the resin layer- The cohesive force of the forming layer may be increased to lower the adhesive force between the resin film forming layer and the supporting sheet. Then, the semiconductor wafer is cut by using a cutting means such as a dicing saw to obtain a semiconductor chip. The cutting depth at this time is set to the sum of the thickness of the semiconductor wafer and the thickness of the resin film forming layer and the depth of the abrasion of the dicing saw. Further, the energy ray irradiation may be performed at any stage after the semiconductor wafer is attached, before the semiconductor wafer is peeled (picked up), for example, after dicing, or after the following expansion process. Also, the energy ray irradiation may be divided into several times.
Subsequently, if the sheet for resin film formation for chips is expanded as needed, the distance between the semiconductor chips is enlarged, and the semiconductor chips can be picked up more easily. At this time, a deviation occurs between the resin film forming layer and the supporting sheet, and the adhesive force between the resin film forming layer and the supporting sheet is reduced, so that the pickup performance of the semiconductor chip is improved. When the semiconductor chip is picked up in this way, the cut resin film-forming layer can remain on the back surface of the semiconductor chip and can be separated from the support sheet.
Then, the semiconductor chip is placed on the die pad of the lead frame or on the surface of another semiconductor chip (lower chip) through the resin film forming layer (hereinafter, the die pad or the lower chip surface on which the chip is mounted is referred to as & materials). The chip mounting portion is heated before or after mounting the semiconductor chip. The heating temperature is usually 80 to 200 DEG C, preferably 100 to 180 DEG C, the heating time is usually 0.1 second to 5 minutes, preferably 0.5 second to 3 minutes, and the pressure at the time of setting is usually 1 kPa to 200 MPa to be.
After the semiconductor chip is mounted on the chip mounting portion, the heating may be further performed if necessary. At this time, the heating condition is the above-mentioned heating temperature range, and the heating time is usually 1 to 180 minutes, preferably 10 to 120 minutes.
The resin film forming layer may be cured by heating in a resin bag, which is usually employed in the manufacture of a package. Through such a process, a semiconductor device in which the resin film forming layer is cured and the semiconductor chip and the chip mounting portion are firmly bonded can be obtained. Since the resin film forming layer is fluidized under the die bonding condition, the resin film forming layer is sufficiently filled up with the unevenness of the chip mounting portion, the occurrence of voids can be prevented, and the reliability of the semiconductor device is enhanced. Further, since the resin film forming layer has a high thermal diffusivity, the semiconductor device has excellent heat radiation characteristics, and the reliability thereof can be prevented from being lowered.
The sheet for forming a resin film for a chip of the present invention may be used for bonding semiconductor compounds, glass, ceramics, metals, etc. in addition to the above-described methods of use.
[Example]
Hereinafter, the present invention will be described by way of examples, but the present invention is not limited to these examples. In the following examples and comparative examples, < measurement of thermal diffusivity > was carried out as follows.
≪ Measurement of thermal diffusivity &
(Before curing)
The resin film forming layer (thickness: 40 占 퐉) was cut to obtain a square sample with each piece of 1 cm. Subsequently, the thermal conductivity of the sample was measured using a thermal conductivity measuring apparatus (i-phase mobile 1u manufactured by ai-phase). Thereafter, the thermal diffusivity of the sample was calculated from the specific heat and the specific gravity of the sample to obtain the thermal diffusivity of the resin film forming layer. The thermal diffusivity was a 2 × 10 -6 ㎡ / s if the less as "good", and, 2 × 10 -6 ㎡ / s or more as "poor".
(After curing)
The resin film-forming layer (thickness: 40 mu m) was cut to obtain a square sample with each side of 1 cm. Subsequently, the sample was cured by heating (at 130 DEG C for 2 hours), and then the thermal conductivity of the sample was measured using a thermal conductivity meter (i-phase mobile 1u manufactured by ai-phase). Thereafter, the thermal diffusivity of the sample was calculated from the specific heat and the specific gravity of the sample to obtain the thermal diffusivity of the resin film. The thermal diffusivity was a 2 × 10 -6 ㎡ / s if the less as "good", and, 2 × 10 -6 ㎡ / s or more as "poor".
≪ Resin Film Forming Layer Composition >
The components constituting the resin film-forming layer are shown below.
(A) Binder Polymer Component: A copolymer (weight average molecular weight: 400,000, glass transition temperature: 6 占 폚) of 85 parts by mass of methyl methacrylate and 15 parts by mass of 2-hydroxyethyl acrylate,
(B) Curable component:
(B1) Bisphenol A type epoxy resin (epoxy equivalent 180-200 g / eq)
(B2) dicyclopentadiene type epoxy resin (EPICLONHP-7200HH manufactured by Dainippon Ink and Chemicals, Inc.)
(B3) Dicyandiamide (Asahi Denka Adder Hardman 3636AS)
(C) Inorganic filler:
(UHP-2 made by Showa Denko Co., Ltd., shape: plate shape, average particle diameter of 11.8 占 퐉, aspect ratio of 11.2, thermal conductivity of 200W / m 占 장 in long axis direction, specific gravity of 2.3 g / cm3)
(CB-A30S, shape: spherical, average particle diameter 30 占 퐉, specific gravity 4.0 g / cm3)
(D) Colorant: black pigment (carbon black, # MA650, average particle diameter 28 nm, manufactured by Mitsubishi Chemical)
(E) Curing accelerator: 2-phenyl-4,5-dihydroxymethylimidazole (curezol 2PHZ-PW manufactured by Shikoku Chemicals)
(F) Coupling agent: A-1110 (manufactured by Nippon Unicar Co., Ltd.)
(Examples and Comparative Examples)
Each of the above components was compounded in the amounts shown in Table 1 to obtain a composition for forming a resin film. A methyl ethyl ketone solution (solid concentration: 61% by weight) of the obtained composition was dried on a release treatment surface of a support sheet (SP-PET381031 manufactured by Lin Tec Corp., thickness 38 占 퐉) Comparative Example 3: 60 占 퐉), and dried (drying conditions: oven at 110 占 폚 for 1 minute) to form a resin film-forming layer on the support sheet to obtain a resin film-forming sheet for chips.
[Mu m]
unit:
quality
A portion
(
Solids
Conversion value)
<Measurement of thermal diffusivity> The resin film-forming layer of the resulting resin film-forming sheet was subjected to <measurement of thermal diffusivity>. The results are shown in Table 2.
The resin film-forming layer of the resin film-forming sheet for chips of Examples exhibited excellent heat diffusivity. Therefore, it is preferable that the resin film forming layer comprises a support sheet and a resin film forming layer formed on the support sheet, wherein the resin film forming layer comprises a binder polymer component (A), a curing component (B) and an inorganic filler (C) A highly reliable semiconductor device can be obtained by using a sheet for forming a resin film for chips having a diffusion rate of 2 x 10 -6 m 2 / s or more.
Claims (11)
Wherein the resin film forming layer comprises a binder polymer component (A), a curing component (B) and an inorganic filler (C)
Wherein the resin film forming layer has a thermal diffusivity of 2 x 10 < -6 > / s or more.
Wherein the resin film forming layer contains 30 to 60 mass% of the inorganic filler (C).
The inorganic filler (C) has an anisotropically shaped particle (C1) having an aspect ratio of 5 or more and an average particle diameter (average particle diameter) of 20 占 퐉 or less and an interfering particle (C2) Wherein the resin film is formed on the surface of the resin film.
Wherein the anisotropic particles (C1) have a thermal conductivity in the major axis direction of 60 to 400 W / m 占..
Wherein the anisotropic particles (C1) are nitride particles.
Wherein the interfering particles (C2) have an average particle diameter of 0.6 to 0.95 times the thickness of the resin film forming layer.
Wherein the weight ratio of the anisotropic particles (C1) to the interfering particles (C2) is 5: 1 to 1: 5.
Wherein the resin film forming layer has a thickness of 20 to 60 占 퐉.
Wherein the resin film forming layer functions as a film-like adhesive for fixing the semiconductor chip to a substrate or another semiconductor chip.
Wherein the resin film forming layer is a protective film of a semiconductor wafer or a chip.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2012-050787 | 2012-03-07 | ||
| JP2012050787 | 2012-03-07 | ||
| PCT/JP2013/055981 WO2013133268A1 (en) | 2012-03-07 | 2013-03-05 | Sheet for forming resin film for chips |
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| KR1020167000118A Division KR20160006801A (en) | 2012-03-07 | 2013-03-05 | Sheet for forming resin film for chips |
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| KR20140128999A true KR20140128999A (en) | 2014-11-06 |
| KR101584473B1 KR101584473B1 (en) | 2016-01-11 |
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| KR1020167003119A KR101969991B1 (en) | 2012-03-07 | 2013-03-05 | Sheet for forming resin film for chips |
| KR1020147022175A KR101584473B1 (en) | 2012-03-07 | 2013-03-05 | Sheet for forming resin film for chips |
| KR1020167000118A KR20160006801A (en) | 2012-03-07 | 2013-03-05 | Sheet for forming resin film for chips |
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| KR1020167003119A KR101969991B1 (en) | 2012-03-07 | 2013-03-05 | Sheet for forming resin film for chips |
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| JP (1) | JP6239498B2 (en) |
| KR (3) | KR101969991B1 (en) |
| CN (1) | CN104160491B (en) |
| TW (1) | TWI600738B (en) |
| WO (1) | WO2013133268A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6646360B2 (en) * | 2015-04-24 | 2020-02-14 | 日東電工株式会社 | Sealing resin sheet and electronic device |
| JP6683563B2 (en) * | 2015-07-21 | 2020-04-22 | 積水化学工業株式会社 | Adhesive sheet |
| CN111372771A (en) * | 2017-12-08 | 2020-07-03 | 积水化学工业株式会社 | Laminate and electronic device |
| JP2018139326A (en) * | 2018-05-31 | 2018-09-06 | 日東電工株式会社 | Manufacturing method of electronic device |
| PL3702400T3 (en) * | 2019-02-27 | 2021-12-06 | Röhm Gmbh | Forgery prevention labels for high-temperature applications |
| JP7257529B2 (en) * | 2019-08-26 | 2023-04-13 | 富士フイルム株式会社 | COMPOSITION FOR HEAT CONDUCTIVE MATERIAL, HEAT CONDUCTIVE MATERIAL, HEAT CONDUCTIVE SHEET, DEVICE WITH HEAT CONDUCTIVE LAYER |
| CN112582282B (en) * | 2019-09-29 | 2023-07-25 | 矽磐微电子(重庆)有限公司 | Semiconductor packaging method and semiconductor packaging structure |
| CN112582281B (en) * | 2019-09-29 | 2023-08-25 | 矽磐微电子(重庆)有限公司 | Semiconductor packaging method and semiconductor packaging structure |
| CN112582283B (en) * | 2019-09-29 | 2023-11-21 | 矽磐微电子(重庆)有限公司 | Semiconductor packaging method and semiconductor packaging structure |
| JP7330404B1 (en) | 2022-06-22 | 2023-08-21 | 三菱電機株式会社 | THERMALLY CONDUCTIVE RESIN COMPOSITION, THERMAL CONDUCTIVE SHEET AND MANUFACTURING METHOD THEREOF, THERMALLY CONDUCTIVE CURED PRODUCT AND MANUFACTURING METHOD THEREOF, POWER MODULE, AND MOTOR STATOR |
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- 2013-03-05 KR KR1020167003119A patent/KR101969991B1/en active IP Right Grant
- 2013-03-05 CN CN201380012849.4A patent/CN104160491B/en active Active
- 2013-03-05 WO PCT/JP2013/055981 patent/WO2013133268A1/en active Application Filing
- 2013-03-05 JP JP2014503852A patent/JP6239498B2/en active Active
- 2013-03-05 KR KR1020147022175A patent/KR101584473B1/en active IP Right Grant
- 2013-03-05 KR KR1020167000118A patent/KR20160006801A/en not_active Application Discontinuation
- 2013-03-07 TW TW102107987A patent/TWI600738B/en active
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| JP2002069392A (en) | 2000-08-31 | 2002-03-08 | Polymatech Co Ltd | Heat-conductive adhesive film, method for producing the same and electronic part |
| JP2002280329A (en) | 2001-03-21 | 2002-09-27 | Lintec Corp | Protective film forming sheet for chip, and method of fabricating semiconductor chip |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP6239498B2 (en) | 2017-11-29 |
| JPWO2013133268A1 (en) | 2015-07-30 |
| TW201402758A (en) | 2014-01-16 |
| KR20160006801A (en) | 2016-01-19 |
| TWI600738B (en) | 2017-10-01 |
| WO2013133268A1 (en) | 2013-09-12 |
| KR101584473B1 (en) | 2016-01-11 |
| CN104160491A (en) | 2014-11-19 |
| KR101969991B1 (en) | 2019-04-17 |
| CN104160491B (en) | 2018-05-11 |
| KR20160018876A (en) | 2016-02-17 |
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