KR20140118654A - Light emitting diode chip - Google Patents

Light emitting diode chip Download PDF

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Publication number
KR20140118654A
KR20140118654A KR1020130063326A KR20130063326A KR20140118654A KR 20140118654 A KR20140118654 A KR 20140118654A KR 1020130063326 A KR1020130063326 A KR 1020130063326A KR 20130063326 A KR20130063326 A KR 20130063326A KR 20140118654 A KR20140118654 A KR 20140118654A
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South Korea
Prior art keywords
layer
transparent electrode
transparent
pattern
electrode layer
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KR1020130063326A
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Korean (ko)
Inventor
김예슬
김신형
이진웅
김경완
윤여진
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서울바이오시스 주식회사
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Publication of KR20140118654A publication Critical patent/KR20140118654A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

Abstract

Disclosed is a light emitting diode chip improved in current dispersion performance, optical efficiency and adhesion.
The light emitting diode chip of the present invention includes a semiconductor laminated portion including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, at least one first transparent electrode layer located on the second conductive type semiconductor layer, 1 current blocking layer positioned on the first transparent electrode layer and at least one second transparent electrode layer positioned on the current blocking layer to suppress direct current movement of the second conductive semiconductor layer located under the current blocking layer, The current spreading function can be improved by the current movement by the current.

Description

[0001] LIGHT EMITTING DIODE CHIP [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode chip, and more particularly to a light emitting diode chip having improved current dispersion performance, optical efficiency and adhesion.

In general, the light emitting diode chip has a structure in which an N-GaN layer, an active layer and a P-GaN layer are sequentially formed on a substrate such as sapphire, a p-electrode is formed on the P-GaN layer, - Electrode is formed.

The n-electrode is formed on the exposed N-GaN layer by etching a part of the active layer and the P-GaN layer.

A transparent electrode layer is formed on the P-GaN layer. The transparent electrode layer is formed so as to uniformly distribute current to the P-GaN layer having a very high resistance component.

An electrode is formed on the transparent electrode layer.

In a typical light emitting diode chip, a current blocking layer is formed immediately below the electrode. The current blocking layer has a function of suppressing current movement concentrated right under the electrode. At this time, although the current blocking layer can interrupt the current movement concentrated right under the electrode, there is a problem that the current movement is completely blocked below the current block layer, and Vf becomes large. Further, since the P-GaN layer and the transparent electrode layer have a large difference in refractive index, there is a problem that the light efficiency is lowered by total reflection at the interface.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a light emitting diode chip having improved current dispersion performance.

Another object of the present invention is to provide a light emitting diode chip capable of improving light efficiency.

Another object of the present invention is to provide a light emitting diode chip capable of improving the adhesion of electrodes and electrode extension parts.

A light emitting diode chip according to an embodiment of the present invention includes a semiconductor laminated portion including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, at least one first transparent electrode layer disposed on the second conductive semiconductor layer, A current blocking layer disposed on the first transparent electrode layer; And at least one second transparent electrode layer positioned on the current blocking layer to suppress direct current movement of the second conductivity type semiconductor layer located under the current blocking layer, Can be improved.

A first electrode extending on the first conductive semiconductor layer and a first electrode extension extending from the first electrode, wherein the second electrode extends on the second transparent electrode layer and the second electrode extends on the second electrode, Electrode extension portion.

The first and second transparent electrode layers have the same thickness.

The first transparent electrode layer has a thickness larger than that of the second transparent electrode layer.

The refractive index may gradually decrease from the second conductivity type semiconductor layer to the second transparent electrode layer.

Wherein the second conductivity type semiconductor layer includes a first region overlapping with the second electrode and the second electrode extension portion and a second region excluding the first region, Further comprising a transparent pattern located on the layer.

The transparent pattern is composed of a plurality of projections of an island type, each of the projections having a hemispherical or inclined side surface.

The transparent pattern has the same height as the first transparent electrode layer.

The second transparent electrode layer includes a first hole exposing an upper surface of the second conductive type semiconductor layer.

The second transparent electrode layer includes a second hole exposing an upper surface of the transparent pattern and a third hole exposing an upper surface of the second conductive type semiconductor layer.

The current blocking layer includes at least one fourth hole, and the fourth hole is located in a region overlapping the second electrode and the second electrode extension.

The fourth hole extends along the longitudinal direction in which the current blocking layer is formed.

And the second transparent electrode layer includes a groove portion corresponding to the fourth hole, and the second electrode and the second electrode extension portion are accommodated in the groove portion.

The second transparent electrode layer may further include a fifth hole corresponding to the fourth hole and exposing the first transparent electrode layer, and the second electrode and the second electrode extension are accommodated in the fifth hole.

The first transparent electrode layer may further include a sixth hole corresponding to the fifth hole and the second conductive type semiconductor layer may include a sixth hole, and the second electrode and the second electrode extension may be accommodated in the fifth and sixth holes .

The second transparent electrode layer exposes a part of the upper surface of the current block layer and includes a plurality of seventh holes spaced apart from each other by a predetermined distance, and the second electrode and the second electrode extension are accommodated in the seventh hole.

The first transparent electrode layer exposes a part of the second conductive type semiconductor layer and includes a plurality of eighth holes spaced apart from each other by a predetermined distance, and the current blocking layer is accommodated in the eighth hole.

The current blocking layer extends to the eighth hole and the upper surface of the first transparent electrode layer.

The second transparent electrode layer has a step structure on the current blocking layer, and the second electrode and the second electrode extension are located on the step structure.

A hole may be formed in at least one of the current blocking layer, the first and second transparent electrode layers, and the hole may be one of a stripe shape, a circular shape, an angular shape, or a shape having a surface.

The transparent pattern has a mesh structure formed in a first direction and in a second direction intersecting with the first direction.

The angle between the first and second directions may be a right angle.

The angle between the first and second directions may be an acute angle or an obtuse angle.

The second transparent electrode layer may have a square pattern, a rhombic pattern, a triangular pattern, or a hexagonal pattern in a region where the second conductive type semiconductor layer is in contact with the transparent conductive pattern.

At least one of the square pattern, the rhombic pattern, the triangular pattern, and the hexagonal pattern includes at least one hole exposing the second conductivity type semiconductor layer from the second transparent electrode layer.

A concave-convex pattern is formed on the second transparent electrode layer corresponding to one of the square pattern, the rhombic pattern, the triangular pattern, and the hexagonal pattern.

An irregular pattern is formed on the second transparent electrode layer.

According to embodiments of the present invention, the light-emitting diode chip has a structure in which the first transparent electrode layer is positioned between the second conductivity type semiconductor layer and the current block layer, and direct current movement of the second conductivity type semiconductor layer, But the current diffusion function can be improved by the current movement by the first transparent electrode layer.

Accordingly, the present invention has an advantage that Vf can be reduced since the current is distributed to the second conductivity type semiconductor layer directly under the current blocking layer through the first transparent electrode layer.

In addition, the present invention can reduce the total reflection by increasing the critical angle by making the refractive index from the second conductivity type semiconductor layer to the second transparent electrode layer become lower. Thus, the present invention has the advantage of improving light extraction.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor light emitting device, including: forming a first conductive semiconductor layer on a first conductive semiconductor layer; forming a second conductive semiconductor layer on the second conductive semiconductor layer; The total reflection generated at the interface between the second transparent electrode layers can be reduced and the light extraction can be improved.

In addition, the present invention has an advantage that the electrode and the electrode extensions positioned on the second transparent electrode layer are formed on the second transparent electrode layer having a step structure, thereby improving the adhesion of the electrode and the electrode extensions by the step structure.

1 is a plan view schematically showing a light emitting diode chip according to a first embodiment of the present invention.
2 is a cross-sectional view illustrating a light emitting diode chip taken along the line I-I 'of FIG.
3 is a cross-sectional view illustrating the current movement of the light emitting diode chip of FIG.
4 is a cross-sectional view illustrating a light emitting diode chip according to a second embodiment of the present invention.
5 is a plan view showing area A of FIG. 1 according to a third embodiment of the present invention.
6 is a cross-sectional view of the light emitting diode chip taken along line II-II 'of FIG.
7 is a plan view showing area A of FIG. 1 according to a fourth embodiment of the present invention.
8 is a cross-sectional view of the light emitting diode chip taken along line III-III 'of FIG.
FIG. 9 is a plan view showing area A of FIG. 1 according to a fifth embodiment of the present invention.
10 is a cross-sectional view illustrating a light emitting diode chip taken along the line IV-IV 'of FIG.
11 is a plan view showing area B of FIG. 1 according to a sixth embodiment of the present invention.
12 is a cross-sectional view illustrating a light emitting diode chip taken along a line V-V 'in FIG.
13 is a cross-sectional view of a light emitting diode chip of another embodiment cut along the line V-V 'of FIG.
FIG. 14 is a cross-sectional view illustrating a light emitting diode chip of another embodiment cut along the line V-V 'of FIG.
15 is a plan view showing a region B in Fig. 1 according to a seventh embodiment of the present invention.
16 is a cross-sectional view illustrating a light emitting diode chip taken along the line VI-VI 'of FIG.
FIG. 17 is a cross-sectional view illustrating a light emitting diode chip of another embodiment cut along the line VI-VI 'of FIG. 15;
18 is a plan view showing area B of FIG. 1 according to an eighth embodiment of the present invention.
FIG. 19 is a cross-sectional view illustrating a light emitting diode chip cut along a line VII-VII 'in FIG. 18; FIG.
FIG. 20 is a plan view showing region A in FIG. 1 according to a ninth embodiment of the present invention, and FIG. 21 is a cross-sectional view illustrating a light emitting diode chip cut along a line VIII-VIII 'in FIG.
22 is a plan view showing area A of FIG. 1 according to a tenth embodiment of the present invention.
23 is a plan view showing area A of FIG. 1 according to an eleventh embodiment of the present invention.
FIGS. 24 to 26 are plan views showing regions A of FIG. 1 according to a twelfth embodiment of the present invention.
FIG. 27 is a cross-sectional view illustrating a light emitting diode chip cut along a line IX-IX 'of FIGS. 24 to 26 according to a thirteenth embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, and the like of the components may be exaggerated for convenience. Like reference numerals designate like elements throughout the specification.

FIG. 1 is a plan view schematically showing a light emitting diode chip according to a first embodiment of the present invention, FIG. 2 is a sectional view showing a light emitting diode chip cut along the line I-I 'of FIG. 1, 2 is a cross-sectional view showing the current movement of the light emitting diode chip of FIG.

1 to 3, a light emitting diode chip 100 according to a first embodiment of the present invention includes a substrate 110, a buffer layer 120, a semiconductor stacked portion, a current blocking layer 190, The first and second electrode extension portions 171 and 181. The first electrode extension portions 181 and the second electrode extension portions 181 are formed on the transparent electrode layers 161 and 163, the first electrode 170, the second electrode 180,

The substrate 110 may be a growth substrate for growing a gallium nitride compound semiconductor layer such as a sapphire substrate, a spinel substrate, a gallium nitride substrate, a silicon carbide substrate, or a silicon substrate, but is not limited thereto.

The semiconductor laminated portion includes a first conductive type semiconductor layer 130, an active layer 140, and a second conductive type semiconductor layer 150.

The active layer 140 is disposed between the first conductive semiconductor layer 130 and the second conductive semiconductor layer 150 and may have a single quantum well structure or a multiple quantum well structure. The compositional element and the composition ratio are determined so that the active layer 140 emits light of a desired wavelength, for example, ultraviolet light or visible light.

The first conductive semiconductor layer 130 may include n-type GaN, and the second conductive semiconductor layer 150 may include p-type GaN. Here, the n-type and the p-type may be reversed. The first and second conductivity type semiconductor layers 130 and 150 may be formed as a single layer or a multilayer.

The active layer 140 and the first and second conductivity type semiconductor layers 130 and 150 may be formed using MOCVD or MBE techniques.

The first transparent electrode layer 161 is formed on the second conductive semiconductor layer 150. The first transparent electrode layer 161 may be formed of a transparent oxide such as ITO, ZnO, FTO, AZO, GZO or Graphene, CNT, Ni / Au, do. The first transparent electrode layer 161 is positioned between the second conductive semiconductor layer 150 and the current block layer 190 and has a function of dispersing a current.

The current blocking layer 190 is disposed on the first transparent electrode layer 161. The current blocking layer 190 is located between the first transparent electrode layer 161 and the second conductive semiconductor layer 150. The current block layer 190 may be formed of an insulating material such as silicon oxide or silicon nitride. The current blocking layer 190 prevents current from directly flowing from the second electrode 180 and the second electrode extension portions 181 to the second conductive type semiconductor layer 150 to disperse the current. .

The second transparent electrode layer 163 is located on the current blocking layer 190 and the first transparent electrode layer 161. The second transparent electrode layer 163 covers the current blocking layer 190 and covers the first transparent electrode layer 161 exposed at the periphery of the current blocking layer 190. The second transparent electrode layer 163 is located between the second electrode extension part 181 and the current blocking layer 190. The second transparent electrode layer 180 may be formed of a transparent oxide such as ITO, ZnO, FTO, AZO, or GZO, or Graphene, CNT, or Ni / Au.

The first and second transparent electrode layers 161 and 163 may have the same thickness and may be made of the same material.

The second electrode 180 and the second electrode extensions 181 are located on the second transparent electrode layer 163.

The light emitting diode chip 100 includes a second conductive semiconductor layer 150 positioned directly under the current blocking layer 190 with a first transparent electrode layer 161 disposed on the second conductive semiconductor layer 150, It is possible to improve the current diffusion function by the current movement by the first transparent electrode layer 161. [

Therefore, the present invention has an advantage that Vf can be reduced by dispersing a current through the first transparent electrode layer 161 to the second conductive type semiconductor layer 150 located under the current blocking layer 190.

4 is a cross-sectional view illustrating a light emitting diode chip according to a second embodiment of the present invention.

4, except that the first and second transparent electrode layers 161 and 163, the light emitting diode chip according to the second embodiment of the present invention includes the light emitting diode chip according to the first embodiment of the present invention shown in FIG. The same reference numerals are given to the same components, and a detailed description of each component will be omitted.

The first and second transparent electrode layers 161 and 163 have different refractive indices from each other. The first and second transparent electrode layers 161 and 163 are formed of a transparent oxide such as ITO, ZnO, FTO, AZO, or GZO or Graphene, CNT, Ni / Au or the like and change the composition ratio, impurities, And may have different refractive indices.

The first transparent electrode layer 161 has a refractive index lower than that of the second conductive type semiconductor layer 150 and the second transparent electrode layer 163 has a refractive index lower than that of the first transparent electrode layer 161. The present invention can reduce the total reflection by increasing the critical angle by making the refractive index gradually decrease from the second conductivity type semiconductor layer 150 to the second transparent electrode layer 163. Therefore, the light emitting diode chip according to the second embodiment of the present invention has an advantage of improving light extraction.

Although each of the first and second transparent electrode layers 161 and 163 is described as being a single layer, the present invention is not limited thereto and may be a multilayer structure.

FIG. 5 is a plan view showing region A of FIG. 1 according to a third embodiment of the present invention, and FIG. 6 is a cross-sectional view of a light emitting diode chip taken along the line II-II 'of FIG.

5 and 6, the LED chip according to the third embodiment of the present invention includes all the structures except for the transparent pattern 361 and the second transparent electrode layer 363 in the first embodiment of FIG. 2 The same reference numerals are used for the same structures as those of the light emitting diode chip according to the first embodiment, and a detailed description of each structure will be omitted.

The second conductivity type semiconductor layer 363 includes a first region overlapping the second electrode (180 in FIG. 1) and the second electrode extension portions (181 in FIG. 1), and a second region excluding the first region do. A first transparent electrode layer (161 in FIG. 2) may be formed in the first region, and the transparent pattern 361 may be formed in the second region.

The transparent pattern 361 may be formed simultaneously with the formation of the first transparent electrode layer 161 (FIG. 2). That is, the transparent pattern 361 may have the same thickness as the first transparent electrode layer 161 (FIG. 2). The transparent patterns 361 are spaced apart from each other by an island type. The transparent pattern 361 may be formed through a patterning process, but is not limited thereto. The transparent pattern 361 may be formed of protrusions having inclined side surfaces or hemispherical protrusions.

The second transparent electrode layer 363 covers the transparent pattern 361. The second transparent electrode layer 363 is located on the transparent pattern 361 and has a stepped structure.

The transparent pattern 361 and the second transparent electrode layer 363 have different refractive indices from each other. The transparent pattern 361 has a refractive index lower than that of the second conductive type semiconductor layer 150 and the second transparent electrode layer 363 has a lower refractive index than the transparent pattern 361. The present invention can reduce the total reflection by increasing the critical angle by making the refractive index gradually decrease from the second conductivity type semiconductor layer 150 to the second transparent electrode layer 363. [

The light emitting diode chip according to the third embodiment of the present invention includes a transparent pattern 361 made of island type protrusions disposed on the second conductive type semiconductor layer 150 and a second transparent conductive pattern 361 disposed on the second conductive type semiconductor layer 150, And the light is refracted by the structure of the transparent electrode layer 363 to the inclined surface or the hemispherical surface. Therefore, the present invention can improve the light extraction by reducing the total reflection occurring at the interface between the second conductive type semiconductor layer 150 and the transparent pattern 361 and the second transparent electrode layer 363. Furthermore, the light emitting diode chip according to the third embodiment of the present invention has a refractive index that gradually decreases from the second conductivity type semiconductor layer 150 to the second transparent electrode layer 363, thereby improving light extraction.

FIG. 7 is a plan view showing region A of FIG. 1 according to a fourth embodiment of the present invention, and FIG. 8 is a cross-sectional view illustrating a light emitting diode chip taken along the line III-III 'of FIG.

7 and 8, the LED chip according to the fourth embodiment of the present invention includes all the configurations except for the second transparent electrode layer 363 having the hole 365 in the third embodiment of FIG. 5 The same reference numerals are used for the same structures as those of the light emitting diode chip according to the first embodiment, and a detailed description of each structure will be omitted.

The light emitting diode chip has a step structure capable of improving light extraction by the second transparent electrode layer 463 including the hole 365.

The transparent pattern 361 and the second transparent electrode layer 363 have different refractive indices from each other. The transparent pattern 361 has a refractive index lower than that of the second conductive type semiconductor layer 150 and the second transparent electrode layer 363 has a lower refractive index than the transparent pattern 361. The present invention can reduce the total reflection by increasing the critical angle by making the refractive index gradually decrease from the second conductivity type semiconductor layer 150 to the second transparent electrode layer 363. [

The light emitting diode chip according to the fourth embodiment of the present invention includes a transparent pattern 361 made of island type protrusions on the second conductive type semiconductor layer 150 and a second transparent electrode layer 363) to refract light to the inclined surface or hemispherical surface. Therefore, the present invention can improve the light extraction by reducing the total reflection occurring at the interface between the second conductive type semiconductor layer 150 and the transparent pattern 361 and the second transparent electrode layer 363. In addition, the light emitting diode chip according to the fourth embodiment of the present invention has a refractive index that gradually decreases from the second conductivity type semiconductor layer 150 to the second transparent electrode layer 363, thereby improving light extraction.

FIG. 9 is a plan view showing region A of FIG. 1 according to a fifth embodiment of the present invention, and FIG. 10 is a cross-sectional view of a light emitting diode chip taken along a line IV-IV 'of FIG.

9 and 10, the LED chip according to the fifth embodiment of the present invention includes all the structures except for the second transparent electrode layer 463 having the first and second holes 467 and 465, The same reference numerals are given to the same elements as those of the LED chip according to the third embodiment of the present invention, and a detailed description of each configuration will be omitted.

A transparent pattern 461 is disposed on the second conductive type semiconductor layer 150. The transparent pattern 461 is the same as the transparent pattern (361 in FIG. 5) according to the third embodiment, and thus its detailed description is omitted.

The second transparent electrode layer 463 covers the transparent pattern 461. The second transparent electrode layer 463 is disposed on the transparent pattern 461 and includes a first hole 467 exposing an upper surface of the transparent pattern 461, And a second hole 465 for exposing the surface.

The light emitting diode chip according to the fifth embodiment of the present invention is characterized in that light extraction is performed by an island type reflection pattern 461 and a second transparent electrode layer 463 including the first and second holes 467 and 465 And has a stepped structure that can be improved.

The transparent pattern 461 and the second transparent electrode layer 463 have different refractive indices from each other. The transparent pattern 461 has a refractive index lower than that of the second conductive type semiconductor layer 150 and the second transparent electrode layer 463 has a lower refractive index than the transparent pattern 461. In the present invention, the refractive index is gradually reduced from the second conductive type semiconductor layer 150 to the second transparent electrode layer 463, thereby increasing the critical angle and reducing the total reflection.

The light emitting diode chip according to the fifth embodiment of the present invention includes a transparent pattern 461 made of island type projections and first and second holes 467 and 465 on the second conductive type semiconductor layer 150 The light is refracted to the inclined surface or the hemispherical surface by the structure of the second transparent electrode layer 463. Accordingly, the present invention can reduce the total reflection occurring at the interface between the second conductive type semiconductor layer 150 and the transparent pattern 461 and the second transparent electrode layer 463, thereby improving light extraction. In addition, the light emitting diode chip according to the fifth embodiment of the present invention has a refractive index that gradually decreases from the second conductive type semiconductor layer 150 to the second transparent electrode layer 463, thereby improving light extraction.

11 is a plan view showing a region B in FIG. 1 according to a sixth embodiment of the present invention, and FIG. 12 is a cross-sectional view illustrating a light emitting diode chip cut along a line V-V 'in FIG.

FIG. 13 is a cross-sectional view illustrating a light emitting diode chip according to another embodiment cut along the line V-V 'in FIG. 11, and FIG. 14 is a cross-sectional view illustrating a light emitting diode chip according to another embodiment cut along the line V- Fig.

11 and 12, the LED chip according to the sixth embodiment of the present invention includes a second electrode extension portion 581, a current blocking layer 590, first and second transparent electrode layers 561 and 563, The same reference numerals are given to the same elements as those of the light emitting diode chip according to the first embodiment of the present invention shown in FIG. 2, and a detailed description of the components will be omitted.

The first transparent electrode layer 561 is located on the second conductive semiconductor layer 150.

The current blocking layer 590 is located on the first transparent electrode layer 561. The current blocking layer 590 includes at least one third hole 595. The third hole 595 is located in a region overlapping with the second electrode extension portion 581. The third hole 596 may be formed along the longitudinal direction of the current block layer 590.

The second transparent electrode layer 563 is located on the second current blocking layer 590 in which the third hole 595 is formed. The second transparent electrode layer 563 has a stepped structure by the third hole 595. That is, the second transparent electrode layer 563 includes a groove portion in a region corresponding to the third hole 595.

The second electrode extension part 581 is located on the second transparent electrode layer 590 having a stepped structure. The second electrode extension part 581 is accommodated in a groove corresponding to the third hole 595.

Although the second electrode extension portion 581 is described as being limited in this embodiment, the second electrode extension portion 581 is not limited to this and may include a second electrode (180 in FIG. 1).

In the LED chip according to the sixth embodiment of the present invention, the second transparent electrode layer 563 has a step structure by the current blocking layer 590 including the third hole 595, Since a part of the second electrode extension part 581 is located in the step structure, it is possible to improve the adhesive strength of the second electrode extension part 581 as compared with a general LED chip in which the second electrode extension part is formed on a flat surface.

Since the first transparent electrode layer 561 is disposed on the second conductive type semiconductor layer 150, the light emitting diode chip according to the sixth embodiment of the present invention may include the current blocking layer 590), the current dispersion performance can be improved.

13, except for the second transparent electrode layer 663, the light emitting diode chip according to another embodiment of the present invention has the same structure as that of the light emitting diode chip according to the fifth embodiment of the present invention shown in FIG. 10, And a detailed description of each configuration will be omitted.

A current blocking layer 690 including a third hole (595 in FIG. 10) is located on the first transparent electrode layer 661.

The second transparent electrode layer 663 is located on the current blocking layer 690 in which the third hole (595 in FIG. 10) is formed. The second transparent electrode layer 663 has a stepped structure by the third hole (595 in FIG. 10). The second transparent electrode layer 663 includes a fourth hole 665 in a region corresponding to the third hole (595 in FIG. 10).

The second electrode extension 681 is located on the second transparent electrode layer 663 where the fourth hole 665 is formed. The second electrode extension 681 is received in the fourth hole 665.

Although the second electrode extension 681 is described as being limited in the present embodiment, the second electrode extension 681 is not limited to this, and the second electrode (180 in FIG. 1) may also be included.

The light emitting diode chip according to another embodiment of the present invention includes a current blocking layer 690 including a third hole (595 in FIG. 10) and a second transparent electrode layer 663 including a fourth hole 665 A part of the second electrode extension part 662 is received in the fourth hole 665, so that the adhesive force can be improved compared with a general LED chip in which the second electrode extension part is formed on a flat surface.

Since the first transparent electrode layer 661 is located on the second conductivity type semiconductor layer 150, the light emitting diode chip according to another embodiment of the present invention may include a current blocking layer 690 ), The current dispersion performance can be improved.

14, the light emitting diode chip according to another embodiment of the present invention has the same structure as the light emitting diode chip of FIG. 13 except for the fifth and sixth holes 665a and 665b, It will be omitted.

The first transparent electrode layer 661 includes a plurality of fifth holes 665a exposing a portion of the second conductive type semiconductor layer 150. [

A current blocking layer 690 including a third hole (595 in FIG. 10) is located on the first transparent electrode layer 661.

The second transparent electrode layer 663 is located on the current blocking layer 690 in which the third hole (595 in FIG. 10) is formed. The second transparent electrode layer 663 includes a sixth hole 665b in a region corresponding to the fifth hole 665a.

The second electrode extension 681 is located on the second transparent electrode layer 663 having fifth and sixth holes 665a and 665b. That is, the second electrode extension part 681 may be received in the fifth and sixth holes 665a and 665b.

Although the second electrode extension 681 is described as being limited in the present embodiment, the second electrode extension 681 is not limited to this, and the second electrode (180 in FIG. 1) may also be included.

The light emitting diode chip according to still another embodiment of the present invention includes a first transparent electrode layer 661 including a fifth hole 665a and a second transparent electrode layer 661 including a sixth hole 665b, A part of the second electrode extension part 662 is accommodated in the fifth and sixth holes 665a and 665b so that the adhesive strength can be improved compared with a general LED chip in which the second electrode extension part is formed on a flat surface.

Since the first transparent electrode layer 661 is located on the second conductive semiconductor layer 150, the light emitting diode chip according to another embodiment of the present invention may include a current blocking layer (not shown) through the first transparent electrode layer 661 690), the current dispersion performance can be improved.

FIG. 15 is a plan view showing a region B in FIG. 1 according to a seventh embodiment of the present invention, and FIG. 16 is a cross-sectional view illustrating a light emitting diode chip cut along a line VI-VI 'in FIG.

15 and 16, the light emitting diode chip according to the seventh embodiment of the present invention includes a second electrode extension portion 781, a current blocking layer 790, first and second transparent electrode layers 761 and 763, The same reference numerals are given to the same elements as those of the light emitting diode chip according to the first embodiment of the present invention shown in FIG. 2, and a detailed description of the components will be omitted.

The first transparent electrode layer 761 is located on the second conductive semiconductor layer 150.

The current blocking layer 790 is located on the first transparent electrode layer 761.

The second transparent electrode layer 763 is located on the current blocking layer 790. The second transparent electrode layer 763 includes a plurality of seventh holes 765 spaced apart from each other. The fifth hole 765 may be formed in a region overlapping the second electrode extension portion 781.

The second electrode extension 781 is located on the second transparent electrode layer 763 including the seventh hole 765. The second electrode extension 781 is received in the seventh hole 765.

In the present embodiment, the second electrode extension portion 781 is described as being limited. However, the second electrode extension portion 781 is not limited to this, and the second electrode (180 in FIG. 1) may also be included.

The light emitting diode chip according to the seventh embodiment of the present invention has a structure in which a part of the second electrode extension part 781 is received in the seventh hole 765, The adhesive strength can be improved.

Since the first transparent electrode layer 761 is located on the second conductive semiconductor layer 150 in the LED chip according to the seventh embodiment of the present invention, 790), current dispersion performance can be improved.

FIG. 17 is a cross-sectional view illustrating a light emitting diode chip of another embodiment cut along the line VI-VI 'of FIG. 15;

17, an LED chip according to another embodiment of the present invention includes an eighth hole 865 formed in a first transparent electrode layer 861 to form a current blocking layer 890 and a second transparent electrode layer 863 And has a stepped structure.

The second electrode extension portion 881 is located on the second transparent electrode layer 863 having a stepped structure by the eighth hole 865. The second electrode extension portion 581 is accommodated in the groove portion of the second transparent electrode layer 863 formed by the eighth hole 865.

Although the second electrode extension portion 881 is described as being limited in this embodiment, the second electrode extension portion 881 is not limited to this, and the second electrode (180 in FIG. 1) may also be included.

The light emitting diode chip according to another embodiment of the present invention has a structure in which a portion of the second electrode extension portion 881 is received in the eighth hole 865, Can be improved.

Since the first transparent electrode layer 861 is located on the second conductivity type semiconductor layer 150, the light emitting diode chip according to another embodiment of the present invention may include a current blocking layer 890 ), The current dispersion performance can be improved.

FIG. 18 is a plan view showing a region B in FIG. 1 according to an eighth embodiment of the present invention, and FIG. 19 is a cross-sectional view illustrating a light emitting diode chip cut along a line VII-VII 'in FIG.

18 and 19, a light emitting diode chip according to an eighth embodiment of the present invention includes a second electrode extension portion 981, a current blocking layer 990, first and second transparent electrode layers 961 and 963, The same reference numerals are given to the same elements as those of the light emitting diode chip according to the first embodiment of the present invention shown in FIG. 2, and a detailed description of the components will be omitted.

The first transparent electrode layer 961 is located on the second conductive semiconductor layer 150. The first transparent electrode layer 961 includes a ninth hole 965 for exposing the conductive semiconductor layer 150. The ninth hole 965 may be formed along the direction in which the second electrode extension part 981 is formed by overlapping the second electrode extension part 981.

The current blocking layer 990 is located on the ninth hole 965 and the first transparent electrode layer 961. The current block layer 990 is received in the ninth hole 965 and extends to the upper surface of the first transparent electrode layer 961 adjacent to the ninth hole 965. Therefore, the current blocking layer 990 has a stepped structure by the ninth hole 965. [

The second transparent electrode layer 963 is located on the current blocking layer 990 of the step structure and the first transparent electrode layer 961.

The second electrode extension portion 981 is positioned on the second transparent electrode layer 963 having a stepped structure by the current blocking layer 990 having a stepped structure.

Although the second electrode extension portion 981 is described as being limited in this embodiment, the second electrode extension portion 981 is not limited to this and may include a second electrode (180 in FIG. 1).

The light emitting diode chip according to the eighth embodiment of the present invention is formed by the second transparent electrode layer 963 having a step structure by the first transparent electrode layer 961 including the ninth hole 965, The adhesive force can be improved as compared with a general LED chip in which the second electrode extension portion is formed on a flat surface.

Since the first transparent electrode layer 961 is located on the second conductivity type semiconductor layer 963, the light emitting diode chip according to the eighth embodiment of the present invention may include the current blocking layer 990), the current dispersion performance can be improved.

FIG. 20 is a plan view showing region A in FIG. 1 according to a ninth embodiment of the present invention, and FIG. 21 is a cross-sectional view illustrating a light emitting diode chip cut along a line VIII-VIII 'in FIG.

20 and 21, a light emitting diode chip according to a ninth embodiment of the present invention includes an active layer 140 excluding a tenth hole 1165, a transparent pattern 1161, and a second transparent electrode layer 1163, 1 and the second conductivity type semiconductor layers 130 and 150 are the same as those of the first to eighth embodiments of the present invention, and therefore, the same reference numerals are given to them, and a detailed description thereof will be omitted.

The transparent pattern 1161 has crossing regions. The transparent pattern 1161 has a mesh structure formed on a top surface of the second conductive type semiconductor layer 150 in a first direction and in a second direction perpendicular to the first direction. The transparent pattern 1161 has a function of improving the current movement by designing the mesh structure to facilitate current movement.

The transparent pattern 1161 may be formed by a patterning process, but is not limited thereto. The cross section of the transparent pattern 1161 may have an inclined side surface or may be hemispherical.

The second transparent electrode layer 1163 is formed on the second conductive type semiconductor layer 150 including the transparent pattern 1161 and exposed by the transparent pattern 1161.

The transparent pattern 1161 and the second transparent electrode layer 1163 have different refractive indices from each other. The transparent pattern 1161 has a refractive index lower than that of the second conductive type semiconductor layer 150 and the second transparent electrode layer 1163 has a lower refractive index than the transparent pattern 1161.

The tenth hole 1165 is formed in the second transparent electrode layer 1163 and exposes the second conductive type semiconductor layer 150 from the second transparent electrode layer 1163. The tenth hole 1165 may be formed on a rectangular pattern of the second transparent electrode layer 1163 defined by the transparent pattern 1161. [ The tenth holes 1165 may correspond to each of the rectangular patterns one by one, and may be formed at the center of each of the rectangular patterns.

The light emitting diode chip according to the ninth embodiment of the present invention has the current dispersion performance (light emitting diode chip) of the light emitting diode chip having the island type transparent pattern (361 in FIG. 5) according to the third embodiment by the transparent pattern 1161 of the mesh structure, Can be improved. Therefore, the present invention can improve the electrical characteristics (VF reduction).

In addition, the LED chip according to the ninth embodiment of the present invention includes a transparent conductive pattern 1161 having a mesh structure and a second transparent electrode layer (not shown) including a tenth hole 1165 on the second conductive semiconductor layer 150 1163) to refract light to the inclined surface or hemispherical surface. Therefore, the present invention can reduce the total reflection occurring at the interface between the second conductive type semiconductor layer 150 and the transparent pattern 1161 and the second transparent electrode layer 1163, thereby improving light extraction.

22 is a plan view showing area A of FIG. 1 according to a tenth embodiment of the present invention.

Referring to FIG. 22, the LED chip according to the tenth embodiment of the present invention is the same as the ninth embodiment except for the shapes of the transparent pattern 1261 and the second transparent electrode layer 1263, .

The transparent pattern 1261 has a mesh structure that intersects in the first and second directions. The angle between the first and second directions may be an acute angle or an obtuse angle.

The second transparent electrode layer 1263 is formed on the second conductive type semiconductor layer exposed by the transparent pattern 1261 including the transparent pattern 1261.

An eleventh hole 1265 is formed in the second transparent electrode layer 1263 to expose the second conductive type semiconductor layer from the second transparent electrode layer 1263. [ The eleventh hole 1265 may be formed on the rhombic pattern of the second transparent electrode layer 1263 defined by the transparent pattern 1261. The eleventh holes 1265 may correspond to each of the rhombic patterns one by one, and may be formed at the center of each rhombic pattern.

In the LED chip according to the tenth embodiment of the present invention, since the transparent pattern 1261 of the mesh structure is formed on the entire upper surface of the second conductivity type semiconductor layer, the electrical characteristics (VF reduction) can be improved.

In addition, the LED chip according to the tenth embodiment of the present invention includes a transparent conductive pattern 1261 having a mesh structure and a second transparent electrode layer 1263 including an eleventh hole 1265 on the second conductive semiconductor layer The light can be refracted by the inclined surfaces or the hemispherical surfaces of the transparent pattern 1261 and the second transparent electrode layer 1263 by the structure to reduce the total reflection caused at the interface therebetween to improve light extraction.

23 is a plan view showing area A of FIG. 1 according to an eleventh embodiment of the present invention.

Referring to FIG. 23, the LED chip according to the eleventh embodiment of the present invention is the same as the ninth embodiment except for the twelfth hole 1365, so a detailed description thereof will be omitted.

The twelfth holes 1365 are formed in each of the square patterns at least two or more.

The LED chip according to the eleventh embodiment of the present invention includes a transparent pattern 1161 and a second transparent electrode layer 1163 including a plurality of holes 1365, The light is refracted to the inclined surface or the hemispherical surface of the reflecting mirror 1163, so that the total reflection occurring at the interface between them can be reduced and the light extraction can be improved.

The first to twelfth holes 467, 465, 595, 665, 665a, 665b, 765, 865, 965, 1165, 1265, and 1365 described above may have at least three sides, such as a triangle, a rectangle, Or may have a circular, semi-circular or stripe shape.

FIGS. 24 to 26 are plan views showing regions A of FIG. 1 according to a twelfth embodiment of the present invention.

As shown in FIGS. 24 to 26, the LED chip according to the twelfth embodiment of the present invention includes transparent patterns 1361, 1461 and 1561 and second transparent electrode layers 1363, 1463 and 1563.

The transparent patterns 1361, 1461, and 1561 have a mesh structure that intersects at least two or more different directions. The mesh structure may be variously changed according to the shape of the second conductive type semiconductor layer exposed from the transparent patterns 1361, 1461, and 1561.

Referring to FIG. 24, the mesh structure has a second conductive type semiconductor layer exposed from the transparent pattern 1361 in a rectangular pattern shape. Referring to FIG. 25, the mesh structure has a second conductive type semiconductor layer exposed from the transparent pattern 1461 in a triangular pattern. Here, the triangular patterns are arranged in a direction in which adjacent triangular patterns are different from each other. Referring to FIG. 26, the mesh structure has a hexagonal patterned second conductivity type semiconductor layer exposed from the transparent pattern 1561.

The second transparent electrode layers 1363, 1463 and 1563 are formed on the second conductive type semiconductor layer exposed by the transparent patterns 1361, 1461 and 1561 and the transparent patterns 1361, 1461 and 1561 .

Since the transparent patterns 1361, 1461, and 1561 of the mesh structure are formed on the entire upper surface of the second conductive type semiconductor layer, the LED chip according to the twelfth embodiment of the present invention can improve the electrical characteristics (VF reduction) .

In addition, the LED chip according to the twelfth embodiment of the present invention has a structure in which the transparent patterns 1361, 1461 and 1561 of the mesh structure and the second transparent electrode layers 1363, 1463 and 1563 are formed on the second conductive type semiconductor layer The light is refracted by the inclined surfaces and hemispherical surfaces of the transparent patterns 1361, 1461, and 1561 and the second transparent electrode layers 1363, 1463, and 1563, thereby reducing the total reflection occurring at the interface therebetween, .

FIG. 27 is a cross-sectional view illustrating a light emitting diode chip cut along a line IX-IX 'of FIGS. 24 to 26 according to a thirteenth embodiment of the present invention.

As shown in FIG. 27, in the LED chip according to the thirteenth embodiment of the present invention, the concave-convex pattern 1067 is formed on the second transparent electrode layers 1363, 1463, and 1563.

The concavo-convex pattern 1067 has a concave portion and a convex portion, and the concave portion and the convex portion can be formed irregularly. Here, the concave portion and the convex portion may be regularly formed to have a predetermined depth and height according to the design of the concave-convex pattern 1067.

The concave-convex pattern 1067 may be formed in a region corresponding to the second conductive type semiconductor layer 150 exposed by the transparent patterns 1361, 1461, and 1561. The uneven pattern 1067 may be locally formed on the second transparent electrode layers 1363, 1463, and 1563 located between the transparent patterns 1361, 1461, and 1561. That is, the uneven pattern 1067 may be located on a square pattern, a triangular pattern, and a hexagonal pattern of the mesh structure defined by the transparent patterns 1361, 1461, and 1561.

In the thirteenth embodiment of the present invention, the concave-convex pattern 1067 is formed in a specific region on the second transparent electrode layers 1363, 1463, and 1563. However, the present invention is not limited thereto, and the second transparent electrode layers 1363, 1463, and 1563, respectively.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments or constructions. Various changes and modifications may be made without departing from the spirit and scope of the invention. have.

161, 261, 561, 761, 861, 961:
163, 263, 363, 463, 563, 763, 863, 963, 1163, 1263, 1363, 1463, 1563:
361, 461, 1161, 1261, 1361, 1461, 1561: Transparent pattern
1067: irregular pattern

Claims (27)

A semiconductor stacked portion including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer;
At least one first transparent electrode layer positioned on the second conductive semiconductor layer;
A current blocking layer positioned on the first transparent electrode layer; And
And at least one second transparent electrode layer positioned on the current blocking layer. The method according to claim 1,
A first electrode extending on the first conductive semiconductor layer and a first electrode extension extending from the first electrode, wherein the second electrode extends on the second transparent electrode layer and the second electrode extends on the second electrode, And a second electrode extension portion. The method according to claim 1,
Wherein the first and second transparent electrode layers have the same thickness. The method according to claim 1,
Wherein the first transparent electrode layer has a thickness larger than that of the second transparent electrode layer. The method according to claim 1,
And the refractive index gradually decreases from the second conductivity type semiconductor layer to the second transparent electrode layer. The method of claim 2,
Wherein the second conductivity type semiconductor layer includes a first region overlapping with the second electrode and the second electrode extension portion and a second region excluding the first region, And further comprising a transparent pattern positioned on the layer. The method of claim 6,
Wherein the transparent pattern comprises a plurality of projections of an island type, each of the projections having a hemispherical shape or an inclined side face. The method of claim 6,
Wherein the transparent pattern has the same height as the first transparent electrode layer. The method of claim 6,
And the second transparent electrode layer includes a first hole exposing an upper surface of the second conductive type semiconductor layer. The method of claim 6,
And the second transparent electrode layer includes a second hole exposing an upper surface of the transparent pattern and a third hole exposing an upper surface of the second conductive type semiconductor layer. The method of claim 2,
Wherein the current blocking layer includes at least one fourth hole and the fourth hole is located in a region overlapping the second electrode and the second electrode extension. The method of claim 11,
And the fourth hole extends along a longitudinal direction in which the current block layer is formed. The method of claim 12,
Wherein the second transparent electrode layer includes a groove portion corresponding to the fourth hole, and the second electrode and the second electrode extension portion are housed in the groove portion. The method of claim 12,
Wherein the second transparent electrode layer further includes a fifth hole corresponding to the fourth hole and exposing the first transparent electrode layer, wherein the second electrode and the second electrode extension are connected to the light emitting diode chip . 15. The method of claim 14,
Wherein the first electrode layer and the second electrode extension portion are formed in the first and second transparent electrode layers, respectively, and the second conductive type semiconductor layer further includes a sixth hole in the first transparent electrode layer, Light emitting diode chip. The method of claim 2,
Wherein the second transparent electrode layer exposes a part of the upper surface of the current blocking layer and includes a plurality of seventh holes spaced apart from each other by a predetermined distance, and the second electrode and the second electrode extension include a light emitting Diode chip. The method of claim 2,
Wherein the first transparent electrode layer exposes a part of the second conductive type semiconductor layer and includes a plurality of eighth holes spaced apart from each other by a predetermined distance, and the current blocking layer is accommodated in the eighth hole. 18. The method of claim 17,
And the current blocking layer extends to the eighth hole and the top surface of the first transparent electrode layer. 18. The method of claim 17,
Wherein the second transparent electrode layer has a step structure on the current blocking layer, and the second electrode and the second electrode extension are located on the step structure. The method according to claim 1,
A hole is formed in at least one of the current blocking layer, the first and second transparent electrode layers, and the hole may be one of a stripe shape, a circular shape, a semicircular shape, an angular shape, or a shape having a surface. The method of claim 6,
Wherein the transparent pattern has a mesh structure formed in a first direction and a second direction intersecting the first direction. 23. The method of claim 21,
Wherein an angle between the first direction and the second direction is a right angle. 23. The method of claim 21,
Wherein an angle between the first direction and the second direction is an acute angle or an obtuse angle. 23. The method of claim 21,
Wherein a region of the second transparent electrode layer in contact with the second conductivity type semiconductor layer by the transparent pattern is any one of a square pattern, a rhombic pattern, a triangular pattern, and a hexagonal pattern. 27. The method of claim 24,
Wherein at least one of the square pattern, the rhombic pattern, the triangular pattern, and the hexagonal pattern includes at least one hole exposing the second conductive type semiconductor layer from the second transparent electrode layer. 27. The method of claim 24,
Wherein the concavo-convex pattern is formed on the second transparent electrode layer corresponding to any one of the square pattern, the rhombic pattern, the triangular pattern, and the hexagonal pattern. The method according to claim 1,
And an uneven pattern is formed on the second transparent electrode layer.
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101602348B1 (en) * 2014-10-10 2016-03-11 영남대학교 산학협력단 Light emitting decice
KR20170091863A (en) * 2016-02-02 2017-08-10 엘지이노텍 주식회사 Light emitting device
US9978911B2 (en) 2016-06-09 2018-05-22 Korea University Research And Business Foundation Light-emitting diode device for enhancing light extraction efficiency and current injection efficiency
WO2019078460A1 (en) * 2017-10-16 2019-04-25 고려대학교 산학협력단 Light-emitting diode flip chip
CN110649131A (en) * 2018-06-27 2020-01-03 首尔伟傲世有限公司 Flip chip type light emitting diode chip and light emitting device including the same
CN116646440A (en) * 2023-07-27 2023-08-25 江西兆驰半导体有限公司 LED chip and preparation method thereof

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101602348B1 (en) * 2014-10-10 2016-03-11 영남대학교 산학협력단 Light emitting decice
KR20170091863A (en) * 2016-02-02 2017-08-10 엘지이노텍 주식회사 Light emitting device
WO2017135688A1 (en) * 2016-02-02 2017-08-10 엘지이노텍(주) Light-emitting element and light-emitting element package comprising same
CN108604622A (en) * 2016-02-02 2018-09-28 Lg 伊诺特有限公司 Light-emitting component and light-emitting element package including light-emitting component
US9978911B2 (en) 2016-06-09 2018-05-22 Korea University Research And Business Foundation Light-emitting diode device for enhancing light extraction efficiency and current injection efficiency
WO2019078460A1 (en) * 2017-10-16 2019-04-25 고려대학교 산학협력단 Light-emitting diode flip chip
CN110649131A (en) * 2018-06-27 2020-01-03 首尔伟傲世有限公司 Flip chip type light emitting diode chip and light emitting device including the same
CN110649131B (en) * 2018-06-27 2022-07-29 首尔伟傲世有限公司 Flip chip type light emitting diode chip and light emitting device including the same
CN116646440A (en) * 2023-07-27 2023-08-25 江西兆驰半导体有限公司 LED chip and preparation method thereof
CN116646440B (en) * 2023-07-27 2023-10-13 江西兆驰半导体有限公司 LED chip and preparation method thereof

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