KR20140118622A - Positive-type photoresist composition, insulating film and OLED comprising the same - Google Patents
Positive-type photoresist composition, insulating film and OLED comprising the same Download PDFInfo
- Publication number
- KR20140118622A KR20140118622A KR1020130034887A KR20130034887A KR20140118622A KR 20140118622 A KR20140118622 A KR 20140118622A KR 1020130034887 A KR1020130034887 A KR 1020130034887A KR 20130034887 A KR20130034887 A KR 20130034887A KR 20140118622 A KR20140118622 A KR 20140118622A
- Authority
- KR
- South Korea
- Prior art keywords
- resin composition
- polyamic acid
- photosensitive resin
- positive photosensitive
- weight
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 title abstract description 3
- 239000011342 resin composition Substances 0.000 claims abstract description 46
- 229920001721 polyimide Polymers 0.000 claims abstract description 34
- 239000004642 Polyimide Substances 0.000 claims abstract description 27
- 229920006026 co-polymeric resin Polymers 0.000 claims abstract description 27
- 239000002904 solvent Substances 0.000 claims abstract description 27
- 239000003513 alkali Substances 0.000 claims abstract description 22
- 150000001875 compounds Chemical class 0.000 claims abstract description 22
- 230000035945 sensitivity Effects 0.000 claims abstract description 18
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000003623 enhancer Substances 0.000 claims abstract description 9
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 claims description 54
- 229920005575 poly(amic acid) Polymers 0.000 claims description 39
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 18
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 12
- 239000003054 catalyst Substances 0.000 claims description 12
- 150000004985 diamines Chemical class 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 10
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 9
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 9
- 239000004848 polyfunctional curative Substances 0.000 claims description 9
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 239000009719 polyimide resin Substances 0.000 claims description 7
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 6
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 5
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 5
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 claims description 4
- HTQNYBBTZSBWKL-UHFFFAOYSA-N 2,3,4-trihydroxbenzophenone Chemical group OC1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 HTQNYBBTZSBWKL-UHFFFAOYSA-N 0.000 claims description 4
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 claims description 4
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 claims description 4
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 claims description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 4
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 claims description 4
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 claims description 4
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 4
- ZRDYULMDEGRWRC-UHFFFAOYSA-N (4-hydroxyphenyl)-(2,3,4-trihydroxyphenyl)methanone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=C(O)C(O)=C1O ZRDYULMDEGRWRC-UHFFFAOYSA-N 0.000 claims description 3
- 150000001298 alcohols Chemical class 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 3
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 claims description 2
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 claims description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 claims description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 2
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 claims description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 2
- 150000002170 ethers Chemical class 0.000 claims description 2
- 150000002576 ketones Chemical class 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 239000008096 xylene Substances 0.000 claims description 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims 3
- OXQGTIUCKGYOAA-UHFFFAOYSA-N 2-Ethylbutanoic acid Chemical compound CCC(CC)C(O)=O OXQGTIUCKGYOAA-UHFFFAOYSA-N 0.000 claims 1
- 125000004203 4-hydroxyphenyl group Chemical group [H]OC1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims 1
- 239000000243 solution Substances 0.000 description 48
- 230000000052 comparative effect Effects 0.000 description 33
- 239000010408 film Substances 0.000 description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 29
- 229910052757 nitrogen Inorganic materials 0.000 description 21
- 239000007787 solid Substances 0.000 description 15
- 229920005989 resin Polymers 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- -1 naphthoquinone diazide compound Chemical class 0.000 description 8
- 238000003756 stirring Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 238000006358 imidation reaction Methods 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 7
- 238000001291 vacuum drying Methods 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- GPXCORHXFPYJEH-UHFFFAOYSA-N 3-[[3-aminopropyl(dimethyl)silyl]oxy-dimethylsilyl]propan-1-amine Chemical compound NCCC[Si](C)(C)O[Si](C)(C)CCCN GPXCORHXFPYJEH-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000004090 dissolution Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- SJRJJKPEHAURKC-UHFFFAOYSA-N N-Methylmorpholine Chemical compound CN1CCOCC1 SJRJJKPEHAURKC-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- VHYFNPMBLIVWCW-UHFFFAOYSA-N 4-Dimethylaminopyridine Chemical compound CN(C)C1=CC=NC=C1 VHYFNPMBLIVWCW-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005886 esterification reaction Methods 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
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- 238000006116 polymerization reaction Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- BZVUJKLIMBKHGS-UHFFFAOYSA-N (2,3,4-trihydroxyphenyl)-(2,3,5-trihydroxyphenyl)methanone Chemical compound OC1=CC(O)=C(O)C(C(=O)C=2C(=C(O)C(O)=CC=2)O)=C1 BZVUJKLIMBKHGS-UHFFFAOYSA-N 0.000 description 1
- JIKXTXDEGMWPJZ-UHFFFAOYSA-N (2,3-dihydroxyphenyl)-(2-hydroxyphenyl)methanone Chemical compound OC1=CC=CC(C(=O)C=2C(=CC=CC=2)O)=C1O JIKXTXDEGMWPJZ-UHFFFAOYSA-N 0.000 description 1
- WQCSLQBRPJWOID-UHFFFAOYSA-N (2,3-dihydroxyphenyl)-(4-hydroxyphenyl)methanone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=CC(O)=C1O WQCSLQBRPJWOID-UHFFFAOYSA-N 0.000 description 1
- GBQZZLQKUYLGFT-UHFFFAOYSA-N (2,4-dihydroxyphenyl)-(2,3,4-trihydroxyphenyl)methanone Chemical compound OC1=CC(O)=CC=C1C(=O)C1=CC=C(O)C(O)=C1O GBQZZLQKUYLGFT-UHFFFAOYSA-N 0.000 description 1
- NFNNWCSMHFTEQD-UHFFFAOYSA-N (2-hydroxyphenyl)-(2,3,4,5,6-pentahydroxyphenyl)methanone Chemical class OC1=CC=CC=C1C(=O)C1=C(O)C(O)=C(O)C(O)=C1O NFNNWCSMHFTEQD-UHFFFAOYSA-N 0.000 description 1
- GKQOIQKMFFMJLF-UHFFFAOYSA-N (2-hydroxyphenyl)-(2,3,4,5-tetrahydroxyphenyl)methanone Chemical compound OC1=C(O)C(O)=CC(C(=O)C=2C(=CC=CC=2)O)=C1O GKQOIQKMFFMJLF-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- PVOAHINGSUIXLS-UHFFFAOYSA-N 1-Methylpiperazine Chemical compound CN1CCNCC1 PVOAHINGSUIXLS-UHFFFAOYSA-N 0.000 description 1
- ITQTTZVARXURQS-UHFFFAOYSA-N 3-methylpyridine Chemical compound CC1=CC=CN=C1 ITQTTZVARXURQS-UHFFFAOYSA-N 0.000 description 1
- LBTKCODMGNUISP-UHFFFAOYSA-N 4-[1-(4-hydroxyphenyl)-2-[4-[2-(4-hydroxyphenyl)propan-2-yl]phenyl]ethyl]phenol Chemical compound C=1C=C(CC(C=2C=CC(O)=CC=2)C=2C=CC(O)=CC=2)C=CC=1C(C)(C)C1=CC=C(O)C=C1 LBTKCODMGNUISP-UHFFFAOYSA-N 0.000 description 1
- WXYSZTISEJBRHW-UHFFFAOYSA-N 4-[2-[4-[1,1-bis(4-hydroxyphenyl)ethyl]phenyl]propan-2-yl]phenol Chemical compound C=1C=C(C(C)(C=2C=CC(O)=CC=2)C=2C=CC(O)=CC=2)C=CC=1C(C)(C)C1=CC=C(O)C=C1 WXYSZTISEJBRHW-UHFFFAOYSA-N 0.000 description 1
- GDOQRPSWRXTAAT-UHFFFAOYSA-N 4-[2-[4-[2-(4-hydroxyphenyl)propan-2-yl]phenyl]ethyl]phenol Chemical compound C=1C=C(CCC=2C=CC(O)=CC=2)C=CC=1C(C)(C)C1=CC=C(O)C=C1 GDOQRPSWRXTAAT-UHFFFAOYSA-N 0.000 description 1
- VOWWYDCFAISREI-UHFFFAOYSA-N Bisphenol AP Chemical compound C=1C=C(O)C=CC=1C(C=1C=CC(O)=CC=1)(C)C1=CC=CC=C1 VOWWYDCFAISREI-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- WXNRYSGJLQFHBR-UHFFFAOYSA-N bis(2,4-dihydroxyphenyl)methanone Chemical compound OC1=CC(O)=CC=C1C(=O)C1=CC=C(O)C=C1O WXNRYSGJLQFHBR-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
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- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
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- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
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- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
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- 238000003860 storage Methods 0.000 description 1
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Images
Classifications
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/008—Azides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- H—ELECTRICITY
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Abstract
본 발명은 알칼리 가용성 폴리아믹산-폴리이미드 공중합체 수지, 디아지드계 감광성 화합물, 감도 증진제 및 용제를 포함하는 포지티브형 감광성 수지 조성물로서, 상기 알칼리 가용성 폴리아믹산-폴리이미드 공중합체 수지를 개선하여 고해상도 구현과 밀착력을 향상시킨 포지티브형 감광성 수지 조성물에 관한 것이다.The present invention relates to a positive photosensitive resin composition comprising an alkali soluble polyamic acid-polyimide copolymer resin, a diazide photosensitive compound, a sensitivity enhancer and a solvent, wherein the alkali soluble polyamic acid-polyimide copolymer resin is improved to realize high resolution And a positive photoresist composition having improved adhesion.
Description
본 발명은 포지티브형 감광성 수지 조성물, 이를 포함하는 절연막 및 유기발광소자에 관한 것이다. 더 상세하게는 알칼리 가용성 폴리아믹산-폴리이미드 공중합체 수지, 디아지드계 감광성 화합물 및 감도 증진제를 포함한 포지티브형 감광성 수지 조성물과 이로부터 형성된 절연막 및 유기발광소자에 관한 것이다.The present invention relates to a positive photosensitive resin composition, an insulating film containing the positive photosensitive resin composition, and an organic light emitting device. More particularly, the present invention relates to a positive-working photosensitive resin composition containing an alkali-soluble polyamic acid-polyimide copolymer resin, a diazide-based photosensitive compound, and a sensitivity enhancer, and an insulating film and an organic light-
최근의 반도체 분야에서는 소자의 고밀도화와 고집적화로 인해, 가공이 용이하고 200℃ 이상의 소성공정에서도 견딜 수 있는 안정한 재료를 선호하고 있으며, 특히 폴리이미드 수지는 내열성, 내약품성, 내열산화성 등에 우수한 특성을 가지고 있어, TFT-LCD의 전극 보호막 등 전자재료에서 자동차, 항공기 등의 내열 소재분야에 이르기까지 광범위하게 사용되고 있다.In the recent semiconductor field, due to the high density and high integration of devices, stable materials that are easy to process and able to withstand a baking process of 200 ° C or more are preferred. In particular, polyimide resins have excellent properties such as heat resistance, chemical resistance, And has been widely used from electronic materials such as TFT-LCD electrode protection films to heat resistant materials such as automobiles and airplanes.
포지티브형 감광성 폴리이미드 수지에 관한 종래기술로서는 폴리아믹산(polyamicacid)에 감광기인 광산발생제를 혼합하는 화학증폭법, 폴리아믹산과 용해억제제인 나프토퀴논디아지드 (naphtoquinonediazide) 화합물을 혼합하는 방법, 가용성 폴리이미드와 나프토퀴논디아지드 화합물을 혼합하여 사용하는 방법 등이 제안되었다. 그러나, 이러한 종래기술들은 경화 후 소자의 신뢰성이 떨어지고, 고해상도의 패턴구현이 어려우며, 다량의 감광제로 인해 물성이 취약해지는 문제점을 가지고 있다. As a conventional technique for a positive photosensitive polyimide resin, a chemical amplification method in which a photoacid generator that is a photosensitive agent is mixed with a polyamic acid, a method in which a polyamic acid and a dissolution inhibitor, a naphtoquinonediazide compound are mixed, A method in which a polyimide and a naphthoquinone diazide compound are mixed and used has been proposed. However, these conventional techniques have a problem that the reliability of the device is poor after curing, the patterning of a high resolution is difficult, and the physical properties are deteriorated due to a large amount of photosensitive agent.
또한 본래의 폴리이미드 수지는 높은 방향족 고리 밀도로 인하여 색상이 황색을 지니고 있어 가시광선 영역에서의 투과도가 낮고 고유전율을 갖는 단점도 가지고 있다.In addition, the original polyimide resin has a yellow color due to its high aromatic ring density, and has a disadvantage in that it has a low transmittance in a visible light region and a high dielectric constant.
절연층 패턴공정은 일반적으로 기재 위에 액상의 포지티브형 감광성 수지 조성물을 떨어뜨려 스핀/슬릿코팅으로 기재 전면에 골고루 도포한 후 예비열처리(prebake)와 노광공정을 통해 회로를 형성한다. ITO 가장자리의 열화방지와 상하쇼트방지를 위해 1000~2000Å의 두께로 절연층을 형성하게 된다.In the insulating layer patterning step, a liquid positive-working photosensitive resin composition is generally dropped on a substrate, and the resultant is uniformly coated on the entire surface of the substrate by spin / slit coating, followed by preliminary heat treatment and exposure to form a circuit. An insulating layer is formed with a thickness of 1000 to 2000 Å in order to prevent deterioration of the edge of the ITO and prevent vertical short-circuiting.
절연용 감광성 수지 조성물로는 이미드(imide)계 고분자나 아크릴(acryl)계 고분자와 같은 유기절연막을 대부분 사용하고 있으나, 공정상에서 ITO 및 특히 SiO2 보호막층에서 밀착력 문제로 공정마진을 확보하기가 쉽지 않으며 또한 디아민(diamine)과 산무수물(acid anhydride)로부터 얻어지는 종래의 폴리이미드(polyimide)가 포함되어 있는 조액상에 첨가제로 실란 커플링제를 사용하여 SiO2 보호막층에서 밀착력 문제를 개선하는데 효과가 있지만 실란 커플링제의 함량에 따라 현상에서 잔사 문제와 장기저장안전성 문제가 있을 수 있다.As the photosensitive resin composition for insulation, most of the organic insulating films such as imide polymers and acryl-based polymers are used, but the process margin is secured due to adhesion problems in the ITO and SiO 2 protective film layers in the process And is effective in improving the adhesion problem in the SiO 2 protective film layer by using a silane coupling agent as an additive on a stabilizing liquid containing a conventional polyimide obtained from diamine and acid anhydride However, depending on the content of silane coupling agent, there may be residue problems and long term storage safety problems in the phenomenon.
본 발명은 포지티브형 감광성 수지 조성물에 포함되는 알칼리 가용성 폴리아믹산-폴리이미드 공중합체 수지의 물성을 개선함으로써 ITO층 특히, SiO2층에 대한 밀착력이 우수하며, 현상시 잔사가 발생하지 않으며, 광투과율이 높고, 저유전율을 갖는 고감도의 회로구현을 가능하게 하는 포지티브형 감광성 수지 조성물을 제공하는 것을 목적으로 한다.The present invention improves the physical properties of the alkali-soluble polyamic acid-polyimide copolymer resin contained in the positive photosensitive resin composition, thereby improving the adhesion to the ITO layer, especially the SiO 2 layer, And which can realize a circuit with high sensitivity and a low dielectric constant and a high sensitivity.
상기의 목적을 달성하기 위하여, 본 발명은 알칼리 가용성 폴리아믹산-폴리이미드 공중합체 수지, 디아지드계 감광성 화합물, 감도 증진제 및 용제를 포함하는 포지티브형 감광성 수지 조성물로서, 상기 알칼리 가용성 폴리아믹산-폴리이미드 공중합체 수지는 하기 화학식 1로 표시되는 디아민, 화학식 2로 표시되는 디아민 및 화학식 3으로 표시되는 디안하이드라이드를 1:0.02~0.23:0.8~1.2의 몰비로 혼합시켜 제조되는 것을 특징으로 하는 포지티브형 감광성 수지 조성물을 제공한다.In order to achieve the above object, the present invention provides a positive photosensitive resin composition comprising an alkali soluble polyamic acid-polyimide copolymer resin, a diazide photosensitive compound, a sensitivity enhancer and a solvent, wherein the alkali soluble polyamic acid- The copolymer resin is prepared by mixing a diamine represented by the following general formula (1), a diamine represented by the general formula (2) and a dianhydride represented by the general formula (3) in a molar ratio of 1: 0.02-0.23: 0.8-1.2 A photosensitive resin composition is provided.
[화학식 1][Chemical Formula 1]
[화학식 2](2)
[화학식 3](3)
또한, 본 발명은 상기 포지티브형 감광성 수지 조성물로 형성된 절연막을 제공한다.The present invention also provides an insulating film formed from the above positive photosensitive resin composition.
또한, 본 발명은 상기 절연막을 포함한 유기발광소자를 제공한다.The present invention also provides an organic light emitting device including the insulating film.
본 발명의 포지티브형 감광성 수지 조성물은 ITO층 특히, SiO2층에 대한 밀착력이 우수하며, 현상시 잔사가 발생하지 않으며, 광투과율이 높고, 저유전율의 특성을 갖는다. 따라서 상기 포지티브형 감광성 수지 조성물은 고해상도 패턴이 요구되는 평판 디스플레이 분야 및 유기발광소자의 유기 절연막 형성에 유용하게 사용될 수 있다.INDUSTRIAL APPLICABILITY The positive photosensitive resin composition of the present invention has excellent adhesion to the ITO layer, particularly the SiO 2 layer, does not generate residues during development, has a high light transmittance and a low dielectric constant. Therefore, the positive photosensitive resin composition can be effectively used in the field of flat panel displays requiring a high resolution pattern and in the formation of organic insulating films of organic light emitting devices.
도 1은 실시예 5의 감광성 수지 조성물의 30μm 해상도 패턴의 SEM 사진이다.1 is an SEM photograph of a 30 μm resolution pattern of the photosensitive resin composition of Example 5. FIG.
이하 본 발명을 더욱 상세하게 설명한다.Hereinafter, the present invention will be described in more detail.
본 발명은 포지티브형 감광성 수지 조성물에 관한 것으로 알칼리 가용성 폴리아믹산-폴리이미드 공중합체 수지, 디아지드계 감광성 화합물, 감도 증진제 및 용제를 포함하는 포지티브형 감광성 수지 조성물로서, 상기 알칼리 가용성 폴리아믹산-폴리이미드 공중합체 수지는 하기 화학식 1로 표시되는 디아민, 화학식 2로 표시되는 디아민 및 화학식 3으로 표시되는 디안하이드라이드를 1:0.02~0.23:0.8~1.2의 몰비로 혼합시켜 제조되는 것을 특징으로 하는 포지티브형 감광성 수지 조성물에 관한 것이다.The present invention relates to a positive photosensitive resin composition, which is a positive photosensitive resin composition comprising an alkali soluble polyamic acid-polyimide copolymer resin, a diazide photosensitive compound, a sensitivity enhancer and a solvent, wherein the alkali soluble polyamic acid- The copolymer resin is prepared by mixing a diamine represented by the following general formula (1), a diamine represented by the general formula (2) and a dianhydride represented by the general formula (3) in a molar ratio of 1: 0.02-0.23: 0.8-1.2 To a photosensitive resin composition.
[화학식 1][Chemical Formula 1]
[화학식 2](2)
[화학식 3](3)
상기 포지티브형 감광성 수지 조성물은 알칼리 가용성 폴리아믹산-폴리이미드 공중합체 수지 100 중량부에 대하여 상기 디아지드계 감광성 화합물을 30 내지 80 중량부로 포함한다. 상기 함량으로 포함될 때 우수한 현상성과 용해성을 보인다.The positive photosensitive resin composition contains the diazide photosensitive compound in an amount of 30 to 80 parts by weight based on 100 parts by weight of the alkali soluble polyamic acid-polyimide copolymer resin. When it is included in the above amount, it exhibits excellent developing property and solubility.
상기 감도 증진제는 상기 알칼리 가용성 폴리아믹산-폴리이미드 공중합체 수지 100 중량부에 대하여3 내지 15 중량부로 포함하며, 상기 함량으로 포함되는 경우 감광 효과를 향상시키고, 윈도우 공정에서 높은 마진을 얻을 수 있다.The sensitivity enhancer is contained in an amount of 3 to 15 parts by weight based on 100 parts by weight of the alkali-soluble polyamic acid-polyimide copolymer resin. When the content is included in the above amount, the sensitivity enhancing effect and a high margin in the window process can be obtained.
상기 용제는 70 내지 90 중량% 사용한다.The solvent is used in an amount of 70 to 90% by weight.
상기 알칼리 가용성 폴리아믹산-폴리이미드 공중합체 수지는 상기 화학식 1의 디아민, 화학식 2의 디아민 및 화학식 3의 디안하이드라이드를 몰비 1:0.02~0.23:0.8~1.2 로 혼합하여 제조한다. 화학식 1, 2 및 3이 상기 함량으로 포함되면 중합중간체인 폴리아믹산의 점도가 고형분 20% 기준일 때 20 내지 100cps가 되며, 바람직하게는 30 내지 60cps가 된다. 상기 폴리아믹산 용액을 이미드화시키면 중량평균분자량이 15,000 내지 30,000인 폴리아믹산-폴리이미드 공중합체 수지가 제조된다.The alkali-soluble polyamic acid-polyimide copolymer resin is prepared by mixing the diamine of the formula (1), the diamine of the formula (2) and the dianhydride of the formula (3) in a molar ratio of 1: 0.02-0.23: 0.8-1.2. When the contents of the formulas (1), (2) and (3) are included in the above amounts, the viscosity of the polyamic acid as the polymerization intermediate becomes 20 to 100 cps, preferably 30 to 60 cps when the solid content is 20%. When the polyamic acid solution is imidized, a polyamic acid-polyimide copolymer resin having a weight average molecular weight of 15,000 to 30,000 is prepared.
상기 알칼리 가용성 폴리아믹산-폴리이미드 공중합체 수지는The alkali-soluble polyamic acid-polyimide copolymer resin
a)상기 화학식 1의 디아민, 화학식 2의 디아민 및 화학식 3의 디안하이드라이드를 몰비 1:0.02~0.23:0.8~1.2로 혼합한 혼합물 5 내지 50 중량%를 제 1용매 50 내지 95 중량%에 용해하여 폴리아믹산 용액을 제조하는 단계;a) 5 to 50% by weight of a mixture of the diamine of the formula 1, the diamine of the formula 2 and the dianhydride of the formula 3 in a molar ratio of 1: 0.02 to 0.23: 0.8 to 1.2 is dissolved in 50 to 95% by weight of the first solvent Thereby producing a polyamic acid solution;
b)상기 폴리아믹산 용액을 화학경화제 및 이미드화 촉매로 부분 이미드화 시키는 단계; 및b) partially imidizing the polyamic acid solution with a chemical hardener and an imidization catalyst; And
c)상기 b)단계의 폴리아믹산 용액에 상기 폴리아믹산 용액의 중량 대비 5 내지 20 중량부의, 제 1용매보다 극성이 낮은 제 2용매를 첨가하고 건조하는 단계로 제조된다.c) adding a second solvent having a lower polarity than that of the first solvent to the polyamic acid solution of step b) in an amount of 5 to 20 parts by weight based on the weight of the polyamic acid solution, followed by drying.
상기 a)단계의 반응 조건은 특별히 한정되지 않지만 20 내지 80℃의 온도로 0.5 내지 10시간 교반하는 것이 바람직하다. 또한, 반응시 아른곤이나 질소 등의 불활성 분위기인 것이 바람직하다.The reaction conditions in step a) are not particularly limited, but it is preferable to stir at a temperature of 20 to 80 캜 for 0.5 to 10 hours. In addition, it is preferable that the reaction atmosphere is an inert atmosphere such as argon gas or nitrogen gas.
상기 a)단계에서 제 1용매는 폴리아믹산을 용해하는 용매이면 특별히 한정하지 않으며, N-메틸-2-피롤리돈(NMP), 디메틸포름아미드(DMF), N,N-디메틸아세트아미드(DMAc), 디메틸설폭사이드(DMSO), 아세톤, 디에틸아세테이트, 테트라하이드로퓨란(THF), 클로로포름 및 γ-부티로락톤 등으로 이루어진 군으로부터 선택되는 하나 이상을 포함할 수 있다.In the step a), the first solvent is not particularly limited as long as it is a solvent dissolving the polyamic acid. N-methyl-2-pyrrolidone (NMP), dimethylformamide (DMF), N, N-dimethylacetamide ), Dimethylsulfoxide (DMSO), acetone, diethyl acetate, tetrahydrofuran (THF), chloroform and? -Butyrolactone, and the like.
또한, 상기 제 1용매의 함량은 50 내지 95 중량%이고, 바람직하게는 70 내지 90 중량%이다. 상기와 같은 함량을 포함했을 때 상기 a)단계의 방법으로 제조된 폴리아믹산 용액의 점도는 20 내지 100cps가 되며, 30 내지 60cps로 조절하는 것이 바람직하다. 상기 폴리아믹산 용액의 점도는 분자량과 관계가 있다. 점도가 20cps 미만일 경우 분자량이 작아져 일정 노광량에서 알칼리 현상속도가 지나치게 빠르게 일어나고, 점도가 100cps를 초과할 경우 분자량이 증가하여 현상속도가 늦어지는 문제가 발생한다.Also, the content of the first solvent is 50 to 95% by weight, preferably 70 to 90% by weight. When the above content is included, the viscosity of the polyamic acid solution prepared by the method of step a) is 20 to 100 cps, preferably 30 to 60 cps. The viscosity of the polyamic acid solution is related to the molecular weight. When the viscosity is less than 20 cps, the molecular weight becomes small, so that the alkali developing speed occurs excessively rapidly at a constant exposure amount. When the viscosity exceeds 100 cps, the molecular weight increases and the developing speed becomes slow.
상기 b)단계에서는 화학 이미드화법을 사용하여 상기 폴리아믹산 용액을 부분 이미드화한다. 상기 화학경화제는 아세트산무수물(AA), 무수프탈산(PA), 테트라하이드로 무수프탈산(THPA) 및 메틸테트라하이드로 무수프탈산(MTHPA) 등으로 이루어진 군으로부터 선택되는 하나 이상을 포함할 수 있다. In the step b), the polyamic acid solution is partially imidized using a chemical imidization method. The chemical curing agent may include at least one selected from the group consisting of acetic anhydride (AA), phthalic anhydride (PA), tetrahydrophthalic anhydride (THPA), and methyltetrahydrophthalic anhydride (MTHPA).
또한 상기 이미드화 촉매는 이소퀴놀린, β-피콜린, 피리딘, 트리에틸아민 및 디메틸아닐린 등으로 이루어진 군으로부터 선택되는 하나 이상을 포함할 수 있다.The imidization catalyst may include at least one selected from the group consisting of isoquinoline, beta-picoline, pyridine, triethylamine, and dimethylaniline.
상기 c)단계에서 제 2용매는 제1 용매보다 극성이 낮은 것을 사용하며, 예를 들어 물, 알코올류, 에테르류 및 케톤류 등으로 이루어진 군으로부터 선택되는 하나 이상을 포함할 수 있다. 상기 제 2용매의 함량은 특별히 한정하지 않으나, 상기 a)단계의 폴리아믹산 용액의 중량 대비 5 내지 20 중량부가 바람직하다. In the step c), the second solvent has a lower polarity than that of the first solvent. For example, the second solvent may include at least one selected from the group consisting of water, alcohols, ethers and ketones. The content of the second solvent is not particularly limited, but is preferably 5 to 20 parts by weight based on the weight of the polyamic acid solution in step a).
상기 b)단계에서 제조된 폴리이미드 수지를 여과한 후, 상기 c)단계의 제 2용매 및 고형화된 폴리이미드 수지 내에 잔존해 있을 제 1용매의 비점을 고려하여 50 내지 150℃의 온도에서 2 내지 24시간 건조하는 것이 바람직하다.After filtering the polyimide resin prepared in the step b), the polyimide resin is filtered at a temperature of 50 to 150 캜 in consideration of the boiling points of the second solvent in the step c) and the first solvent remaining in the solidified polyimide resin, It is preferable to dry it for 24 hours.
상기 및 이하에서 중량평균분자량은 겔투과크로마토그래피(GPC)에 의해 결정되는 폴리스티렌 당량의 환산치로 정의된다. 상기 a), b) 및 c)단계로 제조된 알칼리 가용성 폴리아믹산-폴리이미드 공중합체 수지의 GPC 측정법을 기준으로한 중량평균분자량은 15,000 내지 30,000이며, 상기 범위 안에 있을 때 패턴 공정시 양호한 잔막율/현상속도를 구현할 수 있다.The weight average molecular weight in the above and below is defined as a conversion of polystyrene equivalent determined by gel permeation chromatography (GPC). The weight average molecular weight of the alkali-soluble polyamic acid-polyimide copolymer resin prepared in steps a), b) and c) is 15,000 to 30,000 based on the GPC measurement method. When the weight average molecular weight is within the above range, / Development speed can be achieved.
상기 디아지드계 감광성 화합물은 알칼리 가용성 수지의 알칼리에 대한 용해도를 감소시키는 용해 억제제로 작용하며, 광이 조사되면 알칼리 가용성 물질로 바뀌어 알칼리 가용성 수지의 알칼리 용해도를 증가시키는 역할을 한다. 따라서, 광조사로 인한 용해도의 변화로 광분해성 전사재료의 노광 부위가 현상된다. The diazide-based photosensitive compound acts as a dissolution inhibitor that reduces the solubility of the alkali-soluble resin in alkali, and when irradiated with light, turns into an alkali-soluble material, thereby increasing the alkali solubility of the alkali-soluble resin. Therefore, the exposed portion of the photodegradable transfer material is developed by the change in solubility due to light irradiation.
또한, 상기 디아지드계 감광성 화합물은 퀴논디아지드 술폰산 화합물과의 폴리하이드록시 화합물의 에스테르화 반응에 의해 합성할 수 있다. 상기 디아지드계 감광성 화합물을 얻기 위한 에스테르화 반응은 폴리하이드록시 화합물과 퀴논디아지드 술폰산 화합물을 디옥산, 아세톤, 테트라하이드로퓨란, 메틸에틸케톤, N-메틸피롤리돈, 클로로포름, 트리에틸아민, N-메틸몰포린, N-메틸피페라진 및 4-디메틸아미노피리딘과 같은 염기성 촉매를 첨가하여 축합시킨 후, 얻어진 생성물을 세정, 정제 및 건조시켜 얻어질 수 있다. Further, the above-mentioned diazide-based photosensitive compound can be synthesized by esterification reaction of a polyhydroxy compound with a quinone diazidesulfonic acid compound. The esterification reaction for obtaining the diazide-based photosensitive compound may be carried out by reacting a polyhydroxy compound and a quinonediazide sulfonic acid compound with a solvent such as dioxane, acetone, tetrahydrofuran, methyl ethyl ketone, N-methylpyrrolidone, chloroform, Followed by condensation by adding a basic catalyst such as N-methylmorpholine, N-methylpiperazine and 4-dimethylaminopyridine, and then washing, purifying and drying the obtained product.
상기 퀴논디아지드 술폰산 화합물은 알칼리 가용성 수지의 용해도를 낮게 하는 용해 저지제로의 기능을 한다. 그러나 노광시에는 알칼리 가용성이기 때문에 그로 인해 알칼리에서 알칼리 가용성 수지의 용해를 촉진시키는 특성을 나타낸다. 상기 퀴논디아지드 술폰산 화합물로는 1,2-벤조퀴논 디아지드-4-술폰산, 1,2-나프토퀴논 디아지드-4-술폰산, 1,2-벤조퀴논 디아지드-5-술폰산 및 1,2-나프토퀴논 디아지드-5-술폰산 등의 o-퀴논 디아지드 술폰산화합물 및 퀴논 디아지드 술폰산 유도체 등으로 이루어진 군으로부터 선택되는 하나 이상을 사용할 수 있다. The quinone diazide sulfonic acid compound functions as a dissolution inhibiting agent that lowers the solubility of the alkali-soluble resin. However, since it is alkali soluble at the time of exposure, it exhibits the property of promoting the dissolution of the alkali-soluble resin in the alkali. Examples of the quinonediazide sulfonic acid compound include 1,2-benzoquinonediazide-4-sulfonic acid, 1,2-naphthoquinonediazide-4-sulfonic acid, 1,2- An o-quinonediazide sulfonic acid compound such as 2-naphthoquinonediazide-5-sulfonic acid, and a quinonediazide sulfonic acid derivative; and the like.
상기 폴리하이드록시 화합물로서는 2,3,4-트리하이드록시 벤조페논, 2,2',3-트리하이드록시 벤조페논, 2,3,4'-트리하이드록시 벤조페논 등의 트리하이드록시 벤조페논류, 2,3,4,4'-테트라하이드록시벤조페논, 2,2',4,4'-테트라하이드록시 벤조페논, 2,3,4,5-테트라하이드록시벤조페논 등의 테트라하이드록시 벤조페논류, 2,2',3,4,4'-펜타하이드록시 벤조페논, 2,2',3,4,5-펜타하이드록시 벤조페논 등의 펜타하이드록시 벤조페논류, 2,3,3',4,4',5'-헥사하이드록시벤조페논, 2,2',3,3',4,5'-헥사하이드록시 벤조페논 등의 헥사하이드록시 벤조페논류, 갈산알킬에스테르류 및 옥시플라본류 등으로 이루어진 군으로부터 선택되는 하나 이상을 사용할 수 있다.Examples of the polyhydroxy compound include trihydroxybenzophenone such as 2,3,4-trihydroxybenzophenone, 2,2 ', 3-trihydroxybenzophenone and 2,3,4'-trihydroxybenzophenone. N, N, N, N, N, N, N, or N, such as 2,3,4,4'-tetrahydroxybenzophenone, 2,2 ', 4,4'-tetrahydroxybenzophenone and 2,3,4,5- Pentahydroxybenzophenones such as 2,2 ', 3,4,4'-pentahydroxybenzophenone, 2,2', 3,4,5-pentahydroxybenzophenone, 2, Hexahydroxybenzophenones such as 3,3 ', 4,4', 5'-hexahydroxybenzophenone, 2,2 ', 3,3', 4,5'-hexahydroxybenzophenone and the like, Esters, oxyflavones, and the like can be used.
상기 퀴논디아지드 술폰산 화합물과 상기 폴리하이드록시 화합물로부터 얻어진 디아지드계 감광성 화합물은 2,3,4,4‘-테트라하이드록시벤조페논-1,2-나프토퀴논디아지드-5-설포네이트, 2,3,4-트리하이드록시벤조페논-1,2-나프토퀴논디아지드-5-설포네이트 및 1-[1-(4-하이드록시페닐)이소프로필]-4-[1,1-비스(4-하이드록시페닐)에틸]벤젠)-1,2-나프토퀴논디아지드-5-설포네이트 등으로 이루어진 군으로부터 선택되는 하나 이상을 포함할 수 있다. The diazide-based photosensitive compound obtained from the quinone diazide sulfonic acid compound and the polyhydroxy compound is preferably 2,3,4,4'-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate, 1,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate and 1- [1- (4-hydroxyphenyl) isopropyl] -4- [ Bis (4-hydroxyphenyl) ethyl] benzene) -1,2-naphthoquinonediazide-5-sulfonate, and the like.
상기 감도 증진제는 감도를 향상시키며, 2,3,4-트리하이드록시벤조페논, 2,3,4,4‘-테트라하이드록시벤조페논 및 1-[1-(4-하이드록시페닐)이소프로필]-4-[1,1-비스(4-하이드록시페닐)에틸]벤젠 등으로 이루어진 군으로부터 선택되는 하나 이상을 포함할 수 있다.The sensitivity enhancer improves the sensitivity and is preferably selected from the group consisting of 2,3,4-trihydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone and 1- [1- (4-hydroxyphenyl) isopropyl ] -4- [1,1-bis (4-hydroxyphenyl) ethyl] benzene, and the like.
상기 용제는 에틸 아세테이트, 부틸 아세테이트, 에틸렌글리콜 모노에틸에테르 아세테이트, 디에틸렌글리콜 모노에틸에테르 아세테이트, 프로필렌글리콜 모노에틸에테르 아세테이트, 프로필렌글리콜 모노메틸에테르 아세테이트, 아세톤, 메틸에틸 케톤, 에틸 알코올, 메틸 알코올, 프로필 알코올, 이소프로필 알코올, 벤젠, 톨루엔, 시클로펜타논, 시클로헥사논, 에틸렌글리콜, 크실렌, 에틸렌글리콜 모노에틸에테르 및 디에틸렌글리콜 모노에틸에테르 등으로 이루어진 군으로부터 선택되는 하나 이상을 포함할 수 있다.The solvent may be ethyl acetate, butyl acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monoethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate, acetone, methyl ethyl ketone, ethyl alcohol, And may include one or more selected from the group consisting of propyl alcohol, isopropyl alcohol, benzene, toluene, cyclopentanone, cyclohexanone, ethylene glycol, xylene, ethylene glycol monoethyl ether and diethylene glycol monoethyl ether .
포지티브형 감광성 수지 조성물에는 실리콘 등과 같은 레벨링제, 충진제, 산화방지제 등의 기타 성분이나 첨가제를 포함할 수 있으며, 상기 첨가제는 본 발명이 속한 분야에서 널리 사용되는 물질 중에 임의로 선택하여 사용할 수 있다.The positive photosensitive resin composition may contain other components such as leveling agents such as silicones, fillers, antioxidants and the like, and the additives may be selected from materials widely used in the field to which the present invention belongs.
또한, 본 발명은 상기 포지티브형 감광성 수지 조성물로 형성된 절연막을 제공한다. 상기 절연막은 개선된 알칼리 가용성 폴리아믹산-폴리이미드 공중합체 수지로 인하여 우수한 고감도 패턴 현상성, 광투과성 및 높은 절연저항성을 지닌다.The present invention also provides an insulating film formed from the above positive photosensitive resin composition. The insulating film has an excellent sensitivity pattern developing property, light transmittance and high insulation resistance due to the improved alkali-soluble polyamic acid-polyimide copolymer resin.
상기 절연막을 제조하는 방법은 다음과 같다.The method of manufacturing the insulating film is as follows.
상기 포지티브형 감광성 수지 조성물을 스핀코터를 사용하여 1 내지 3μm의 두께로 기판 표면에 도포한다. 90 내지 120℃로 1 내지 10분간 예비열처리한다. 상기 도포막에 마스크를 위치시킨 뒤 자외선을 조사한 후, 알칼리 수용액으로 현상하여 불필요한 부분을 제거하여 패턴을 형성한다. 노광량은 해상도에 따라 결정되며, 현상액은 알칼리 수용액으로서 수산화나트륨, 수산화칼륨, 규산나트륨, 암모니아 등의 무기 알칼리류를 사용하는 것이 바람직하고, 더욱 바람직하게는 TMAH(Tetra methyl ammonium hydroxide) 2.38%를 사용한다. 상기 알칼리 수용액으로 60 내지 180초 수행한 후 상기 패턴을 핫플레이트를 이용하여 150 내지 260℃로 20 내지 60분 동안 후열처리하여 절연막을 형성할 수 있다.The positive photosensitive resin composition is coated on the surface of the substrate to a thickness of 1 to 3 m using a spin coater. And preliminarily heat-treated at 90 to 120 ° C for 1 to 10 minutes. After the mask is placed on the coating film, ultraviolet rays are irradiated and then developed with an aqueous alkaline solution to remove unnecessary portions to form a pattern. The amount of exposure is determined depending on the resolution, and as the alkaline aqueous solution, it is preferable to use inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium silicate, and ammonia, more preferably TMAH (Tetra methyl ammonium hydroxide) do. After the alkali aqueous solution is applied for 60 to 180 seconds, the pattern may be post-heat treated at 150 to 260 ° C for 20 to 60 minutes using a hot plate to form an insulating film.
상기 포지티브형 감광성 수지 조성물의 바람직한 코팅막의 두께는 1.0 내지 2.0μm이며, 상기 두께로 제조한 절연막의 유전율은 5이하이며, 3 내지 4인 것이 바람직하다.The thickness of a preferable coating film of the positive photosensitive resin composition is 1.0 to 2.0 占 퐉, and the dielectric constant of the insulating film made to the thickness is 5 or less, preferably 3 to 4.
또한, 본 발명은 상기 절연막을 포함하는 유기발광소자를 제공한다. 유기발광 소자는 투명전극을 증착한 투명기판 상에 포토레지스트를 코팅, 노광, 현상, 에칭, 박리 등의 과정을 거쳐 패턴화하고, 상기 방법으로 제조한 절연층 패턴 위에 다시 격벽을 형성한다. 그 후 전자주입층, 전자수송층, 발광층, 정공수송층 및 정공주입층의 순으로 유기박막을 증착시킨 후, 그 위에 금속전극층을 증착시킨다. 최종적으로 봉지재를 통해 밀봉한 후 모듈을 조립하여 유기발광소자를 제조할 수 있다.Also, the present invention provides an organic light emitting device including the insulating film. In the organic light emitting device, a photoresist is patterned on a transparent substrate on which a transparent electrode is deposited through a process such as coating, exposure, development, etching, peeling and the like, and barrier ribs are formed on the insulating layer pattern formed by the above method. Thereafter, an organic thin film is deposited in the order of an electron injection layer, an electron transporting layer, a light emitting layer, a hole transporting layer, and a hole injecting layer, and then a metal electrode layer is deposited thereon. Finally, after sealing through the sealing material, the module can be assembled to manufacture an organic light emitting device.
상기 포지티브형 감광성 수지 조성물은 노광 전에는 디아지드계 감광성 화합물의 용해 억제 작용에 의해 알칼리 현상액에 대하여 불용성 또는 난용성 특성을 나타내며, 노광에 의해 디아지드계 감광성 화합물이 변화하여 알칼리 현상액에 대하여 용해되는 특성으로 변화하는 포지티브형이다.The positive photosensitive resin composition exhibits insoluble or poorly soluble characteristics with respect to an alkali developer due to the dissolution inhibiting action of the diazide-based photosensitive compound before exposure, and is characterized in that the diazide-based photosensitive compound is changed by exposure to dissolve in an alkaline developer As shown in Fig.
따라서, 상기 유기발광소자는 액티브 매트릭스형 유기발광소자라고 할 수 있다.
Therefore, the organic light emitting device may be referred to as an active matrix organic light emitting device.
이하, 본 발명을 실시예에 의해 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to examples.
단, 하기 실시예는 본 발명을 예시하는 것일 뿐, 본 발명의 내용이 하기 실시예에 한정되는 것은 아니다.
However, the following examples are illustrative of the present invention, and the present invention is not limited to the following examples.
<알칼리 가용성 폴리아믹산-폴리이미드 공중합체 수지 중합>≪ Polymerization of alkali soluble polyamic acid-polyimide copolymer resin >
실시예Example 1. One.
질소주입장치, 적하깔때기, 온도조절기 및 냉각기를 부착한 100㎖ 3-Neck 둥근바닥 플라스크에 질소를 통과시키면서 제1 용매로 N,N-디메틸아세트아미드(DMAc) 76.61g을 채운다. 상기 용액에 Bis-AP-AF 8.88g(0.2425mol)과 1,3-비스(3-아미노프로필)테트라메틸디실로세인 0.19g(0.0075mol)을 용해하여 상온에서 유지하였다. 상기 용액에 6FDA 10.0g(0.225mol)을 첨가하여 10분 동안 6FDA를 완전히 용해시켰다. 고형분의 농도는 20 중량%였으며, 이 후 용액을 상온에서 1시간 교반하였다. 23℃에서의 점도 39cps의 폴리아믹산 수지를 얻었다.N, N-dimethylacetamide (DMAc) (76.61 g) was charged into a 100 ml 3-neck round bottom flask equipped with a nitrogen inlet, a dropping funnel, a temperature controller and a condenser while passing nitrogen through the flask. 8.88 g (0.2425 mol) of bis-AP-AF and 0.19 g (0.0075 mol) of 1,3-bis (3-aminopropyl) tetramethyldisiloxane were dissolved in the solution and kept at room temperature. 10.0 g (0.225 mol) of 6FDA was added to the solution to completely dissolve 6FDA for 10 minutes. The concentration of the solid was 20% by weight, and the solution was stirred at room temperature for 1 hour. To obtain a polyamic acid resin having a viscosity of 39 cps at 23 占 폚.
상기 폴리아믹산 용액에 화학경화제로 아세트산무수물(AA)과 이미드화 촉매로 피리딘을 0.5mol첨가 한 후, 폴리아믹산 용액을 80℃에서 1시간 교반하여 이미드화한다. 상기 이미드화된 혼합물 30g을 물 300g에 첨가하여 침전시키고, 침전된 고형분을 여과 및 분쇄 공정을 거쳐 미세 분말화 한 후 100℃의 진공 건조 오븐에서 18시간 건조하여 약 18g의 중량평균분자량이 20,000g/mol인 고형분 분말을 얻었다.
Acetic anhydride (AA) as a chemical hardener and 0.5 mol of pyridine as an imidation catalyst are added to the polyamic acid solution, and then the polyamic acid solution is imidized by stirring at 80 ° C for 1 hour. 30 g of the imidized mixture was added to 300 g of water and precipitated. The precipitated solid was filtered and pulverized to fine powder, and dried in a vacuum drying oven at 100 캜 for 18 hours to obtain a solution having a weight average molecular weight of 20,000 g / mol. < / RTI >
실시예Example 2. 2.
질소주입장치, 적하깔때기, 온도조절기 및 냉각기를 부착한 100㎖ 3-Neck 둥근바닥 플라스크에 질소를 통과시키면서 제1 용매로 N,N-디메틸아세트아미드(DMAc) 76.61g을 채운다. 상기 용액에 Bis-AP-AF 8.70g(0.2375mol)과 1,3-비스(3-아미노프로필)테트라메틸디실로세인 0.31g(0.0125mol)을 용해하여 상온에서 유지하였다. 상기 용액에 6FDA 10.0g(0.225mol)을 첨가하여 10분 동안 6FDA를 완전히 용해시켰다. 고형분의 농도는 20 중량%였으며, 이 후 용액을 상온에서 1시간 교반하였다. 23℃에서의 점도 40cps의 폴리아믹산 수지를 얻었다.N, N-dimethylacetamide (DMAc) (76.61 g) was charged into a 100 ml 3-neck round bottom flask equipped with a nitrogen inlet, a dropping funnel, a temperature controller and a condenser while passing nitrogen through the flask. 8.70 g (0.2375 mol) of bis-AP-AF and 0.31 g (0.0125 mol) of 1,3-bis (3-aminopropyl) tetramethyldisiloxane were dissolved in the solution and kept at room temperature. 10.0 g (0.225 mol) of 6FDA was added to the solution to completely dissolve 6FDA for 10 minutes. The concentration of the solid was 20% by weight, and the solution was stirred at room temperature for 1 hour. To obtain a polyamic acid resin having a viscosity of 40 cps at 23 占 폚.
상기 폴리아믹산 용액에 화학경화제로 아세트산무수물(AA)과 이미드화 촉매로 피리딘을 0.5mol첨가 한 후, 폴리아믹산 용액을 80℃에서 1시간 교반하여 이미드화한다. 상기 이미드화된 혼합물 30g을 물 300g에 첨가하여 침전시키고, 침전된 고형분을 여과 및 분쇄 공정을 거쳐 미세 분말화 한 후 100℃의 진공 건조 오븐에서 18시간 건조하여 약 18g의 중량평균분자량이 21,000g/mol인 고형분 분말을 얻었다.
Acetic anhydride (AA) as a chemical hardener and 0.5 mol of pyridine as an imidation catalyst are added to the polyamic acid solution, and then the polyamic acid solution is imidized by stirring at 80 ° C for 1 hour. The imidized mixture (30 g) was added to 300 g of water and precipitated. The precipitated solid was filtered and pulverized to fine powder, which was then dried in a vacuum drying oven at 100 ° C. for 18 hours to give a weight average molecular weight of about 18 g / mol. < / RTI >
실시예Example 3. 3.
질소주입장치, 적하깔때기, 온도조절기 및 냉각기를 부착한 100㎖ 3-Neck 둥근바닥 플라스크에 질소를 통과시키면서 제1 용매로 N,N-디메틸아세트아미드(DMAc) 76.61g을 채운다. 상기 용액에 Bis-AP-AF 8.24g(0.2250mol)과 1,3-비스(3-아미노프로필)테트라메틸디실로세인 0.62g(0.025mol)을 용해하여 상온에서 유지하였다. 상기 용액에 6FDA 10.0g(0.225mol)을 첨가하여 10분 동안 6FDA를 완전히 용해시켰다. 고형분의 농도는 20 중량%였으며, 이 후 용액을 상온에서 3시간 교반하였다. 23℃에서의 점도 43cps의 폴리아믹산 수지를 얻었다.N, N-dimethylacetamide (DMAc) (76.61 g) was charged into a 100 ml 3-neck round bottom flask equipped with a nitrogen inlet, a dropping funnel, a temperature controller and a condenser while passing nitrogen through the flask. To this solution, 8.24 g (0.2250 mol) of bis-AP-AF and 0.62 g (0.025 mol) of 1,3-bis (3-aminopropyl) tetramethyldisiloxane were dissolved and kept at room temperature. 10.0 g (0.225 mol) of 6FDA was added to the solution to completely dissolve 6FDA for 10 minutes. The concentration of the solid was 20% by weight, and the solution was then stirred at room temperature for 3 hours. A polyamic acid resin having a viscosity of 43 cps at 23 占 폚 was obtained.
상기 폴리아믹산 용액에 화학경화제로 아세트산무수물(AA)과 이미드화 촉매로 피리딘을 0.5mol첨가 한 후, 폴리아믹산 용액을 80℃에서 1시간 교반하여 이미드화한다. 상기 이미드화된 혼합물 30g을 물 300g에 첨가하여 침전시키고, 침전된 고형분을 여과 및 분쇄 공정을 거쳐 미세 분말화 한 후 100℃의 진공 건조 오븐에서 18시간 건조하여 약 18g의 중량평균분자량이 20,000g/mol인 고형분 분말을 얻었다.
Acetic anhydride (AA) as a chemical hardener and 0.5 mol of pyridine as an imidation catalyst are added to the polyamic acid solution, and then the polyamic acid solution is imidized by stirring at 80 ° C for 1 hour. 30 g of the imidized mixture was added to 300 g of water and precipitated. The precipitated solid was filtered and pulverized to fine powder, and dried in a vacuum drying oven at 100 캜 for 18 hours to obtain a solution having a weight average molecular weight of 20,000 g / mol. < / RTI >
실시예Example 4. 4.
질소주입장치, 적하깔때기, 온도조절기 및 냉각기를 부착한 100㎖ 3-Neck 둥근바닥 플라스크에 질소를 통과시키면서 제1 용매로 N,N-디메틸아세트아미드(DMAc) 76.61g을 채운다. 상기 용액에 Bis-AP-AF 7.78g(0.2125mol)과 1,3-비스(3-아미노프로필)테트라메틸디실로세인 0.93g(0.0375mol)을 용해하여 상온에서 유지하였다. 상기 용액에 6FDA 10.0g(0.225mol)을 첨가하여 10분 동안 6FDA를 완전히 용해시켰다. 고형분의 농도는 20 중량%였으며, 이 후 용액을 상온에서 3시간 교반하였다. 23℃에서의 점도 40cps의 폴리아믹산 수지를 얻었다.N, N-dimethylacetamide (DMAc) (76.61 g) was charged into a 100 ml 3-neck round bottom flask equipped with a nitrogen inlet, a dropping funnel, a temperature controller and a condenser while passing nitrogen through the flask. 7.78 g (0.2125 mol) of bis-AP-AF and 0.93 g (0.0375 mol) of 1,3-bis (3-aminopropyl) tetramethyldisiloxane were dissolved in the solution and kept at room temperature. 10.0 g (0.225 mol) of 6FDA was added to the solution to completely dissolve 6FDA for 10 minutes. The concentration of the solid was 20% by weight, and the solution was then stirred at room temperature for 3 hours. To obtain a polyamic acid resin having a viscosity of 40 cps at 23 占 폚.
상기 폴리아믹산 용액에 화학경화제로 아세트산무수물(AA)과 이미드화 촉매로 피리딘을 0.5mol첨가 한 후, 폴리아믹산 용액을 80℃에서 1시간 교반하여 이미드화한다. 상기 이미드화된 혼합물 30g을 물 300g에 첨가하여 침전시키고, 침전된 고형분을 여과 및 분쇄 공정을 거쳐 미세 분말화 한 후 100℃의 진공 건조 오븐에서 18시간 건조하여 약 18g의 중량평균분자량이 20,000g/mol인 고형분 분말을 얻었다.
Acetic anhydride (AA) as a chemical hardener and 0.5 mol of pyridine as an imidation catalyst are added to the polyamic acid solution, and then the polyamic acid solution is imidized by stirring at 80 ° C for 1 hour. 30 g of the imidized mixture was added to 300 g of water and precipitated. The precipitated solid was filtered and pulverized to fine powder, and dried in a vacuum drying oven at 100 캜 for 18 hours to obtain a solution having a weight average molecular weight of 20,000 g / mol. < / RTI >
비교예Comparative Example 1. One.
질소주입장치, 적하깔때기, 온도조절기 및 냉각기를 부착한 100㎖ 3-Neck 둥근바닥 플라스크에 질소를 통과시키면서 제1 용매로 N,N-디메틸아세트아미드(DMAc) 76.61g을 채운다. 상기 용액에 Bis-AP-AF 9.16g(0.25mol)을 용해하였다. 상기 용액에 6FDA 10.0g(0.225mol)을 첨가하여 10분 동안 6FDA를 완전히 용해시켰다. 고형분의 농도는 20 중량%였으며, 이 후 용액을 상온에서 3시간 교반하였다. 23℃에서의 점도 43cps의 폴리아믹산 수지를 얻었다.N, N-dimethylacetamide (DMAc) (76.61 g) was charged into a 100 ml 3-neck round bottom flask equipped with a nitrogen inlet, a dropping funnel, a temperature controller and a condenser while passing nitrogen through the flask. To this solution was dissolved 9.16 g (0.25 mol) of Bis-AP-AF. 10.0 g (0.225 mol) of 6FDA was added to the solution to completely dissolve 6FDA for 10 minutes. The concentration of the solid was 20% by weight, and the solution was then stirred at room temperature for 3 hours. A polyamic acid resin having a viscosity of 43 cps at 23 占 폚 was obtained.
상기 폴리아믹산 용액에 화학경화제로 아세트산무수물(AA)과 이미드화 촉매로 피리딘을 0.5mol첨가 한 후, 폴리아믹산 용액을 80℃에서 1시간 교반하여 이미드화한다. 상기 이미드화된 혼합물 30g을 물 300g에 첨가하여 침전시키고, 침전된 고형분을 여과 및 분쇄 공정을 거쳐 미세 분말화 한 후 100℃의 진공 건조 오븐에서 18시간 건조하여 약 18g의 중량평균분자량이 22,000g/mol인 고형분 분말을 얻었다.
Acetic anhydride (AA) as a chemical hardener and 0.5 mol of pyridine as an imidation catalyst are added to the polyamic acid solution, and then the polyamic acid solution is imidized by stirring at 80 ° C for 1 hour. The imidized mixture (30 g) was added to 300 g of water and precipitated. The precipitated solid was filtered and pulverized to fine powder and dried in a vacuum drying oven at 100 ° C. for 18 hours to obtain a solution having a weight average molecular weight of 22,000 g / mol. < / RTI >
비교예Comparative Example 2. 2.
질소주입장치, 적하깔때기, 온도조절기 및 냉각기를 부착한 100㎖ 3-Neck 둥근바닥 플라스크에 질소를 통과시키면서 제1 용매로 N,N-디메틸아세트아미드(DMAc) 76.61g을 채운다. 상기 용액에 Bis-AP-AF 9.06g(0.2475mol)과 1,3-비스(3-아미노프로필)테트라메틸디실로세인 0.06g(0.0025mol)을 용해하여 상온에서 유지하였다. 상기 용액에 6FDA 10.0g(0.225mol)을 첨가하여 10분 동안 6FDA를 완전히 용해시켰다. 고형분의 농도는 20 중량%였으며, 이 후 용액을 상온에서 3시간 교반하였다. 23℃에서의 점도 42cps의 폴리아믹산 수지를 얻었다.N, N-dimethylacetamide (DMAc) (76.61 g) was charged into a 100 ml 3-neck round bottom flask equipped with a nitrogen inlet, a dropping funnel, a temperature controller and a condenser while passing nitrogen through the flask. 9.06 g (0.2475 mol) of bis-AP-AF and 0.06 g (0.0025 mol) of 1,3-bis (3-aminopropyl) tetramethyldisiloxane were dissolved in the solution and kept at room temperature. 10.0 g (0.225 mol) of 6FDA was added to the solution to completely dissolve 6FDA for 10 minutes. The concentration of the solid was 20% by weight, and the solution was then stirred at room temperature for 3 hours. To obtain a polyamic acid resin having a viscosity of 42 cps at 23 占 폚.
상기 폴리아믹산 용액에 화학경화제로 아세트산무수물(AA)과 이미드화 촉매로 피리딘을 0.5mol첨가 한 후, 폴리아믹산 용액을 80℃에서 1시간 교반하여 이미드화한다. 상기 이미드화된 혼합물 30g을 물 300g에 첨가하여 침전시키고, 침전된 고형분을 여과 및 분쇄 공정을 거쳐 미세 분말화 한 후 100℃의 진공 건조 오븐에서 18시간 건조하여 약 18g의 중량평균분자량이 21,000g/mol인 고형분 분말을 얻었다.
Acetic anhydride (AA) as a chemical hardener and 0.5 mol of pyridine as an imidation catalyst are added to the polyamic acid solution, and then the polyamic acid solution is imidized by stirring at 80 ° C for 1 hour. The imidized mixture (30 g) was added to 300 g of water and precipitated. The precipitated solid was filtered and pulverized to fine powder, which was then dried in a vacuum drying oven at 100 ° C. for 18 hours to give a weight average molecular weight of about 18 g / mol. < / RTI >
비교예Comparative Example 3. 3.
질소주입장치, 적하깔때기, 온도조절기 및 냉각기를 부착한 100㎖ 3-Neck 둥근바닥 플라스크에 질소를 통과시키면서 제1 용매로 N,N-디메틸아세트아미드(DMAc) 76.61g을 채운다. 상기 용액에 Bis-AP-AF 7.36g(0.2mol)과 1,3-비스(3-아미노프로필)테트라메틸디실로세인 1.24g(0.05mol)을 용해하여 상온에서 유지하였다. 상기 용액에 6FDA 10.0g(0.225mol)을 첨가하여 10분 동안 6FDA를 완전히 용해시켰다. 고형분의 농도는 20 중량%였으며, 이 후 용액을 상온에서 3시간 교반하였다. 23℃에서의 점도 42cps의 폴리아믹산 수지를 얻었다.N, N-dimethylacetamide (DMAc) (76.61 g) was charged into a 100 ml 3-neck round bottom flask equipped with a nitrogen inlet, a dropping funnel, a temperature controller and a condenser while passing nitrogen through the flask. 7.36 g (0.2 mol) of bis-AP-AF and 1.24 g (0.05 mol) of 1,3-bis (3-aminopropyl) tetramethyldisiloxane were dissolved in the solution and kept at room temperature. 10.0 g (0.225 mol) of 6FDA was added to the solution to completely dissolve 6FDA for 10 minutes. The concentration of the solid was 20% by weight, and the solution was then stirred at room temperature for 3 hours. To obtain a polyamic acid resin having a viscosity of 42 cps at 23 占 폚.
상기 폴리아믹산 용액에 화학경화제로 아세트산무수물(AA)과 이미드화 촉매로 피리딘을 0.5mol첨가 한 후, 폴리아믹산 용액을 80℃에서 1시간 교반하여 이미드화한다. 상기 이미드화된 혼합물 30g을 물 300g에 첨가하여 침전시키고, 침전된 고형분을 여과 및 분쇄 공정을 거쳐 미세 분말화 한 후 100℃의 진공 건조 오븐에서 18시간 건조하여 약 18g의 중량평균분자량이 21,000g/mol인 고형분 분말을 얻었다.
Acetic anhydride (AA) as a chemical hardener and 0.5 mol of pyridine as an imidation catalyst are added to the polyamic acid solution, and then the polyamic acid solution is imidized by stirring at 80 ° C for 1 hour. The imidized mixture (30 g) was added to 300 g of water and precipitated. The precipitated solid was filtered and pulverized to fine powder, which was then dried in a vacuum drying oven at 100 ° C. for 18 hours to give a weight average molecular weight of about 18 g / mol. < / RTI >
<감광성 수지 조성물 제조>≪ Preparation of Photosensitive Resin Composition &
실시예Example 5. 5.
실시예 1의 알칼리 가용성 폴리아믹산-폴리이미드 공중합체 수지 12중량%, 디아지드계 감광성 화합물((1-[1-(4-하이드록시페닐)이소프로필]-4-[1,1-비스(4-하이드록시페닐)에틸]벤젠)-1,2-나프토퀴논디아지드-5-설포네이트) 6중량%, 감도증진제(1-[1-(4-하이드록시페닐)이소프로필]-4-[1,1-비스(4-하이드록시페닐)에틸]벤젠) 1.5중량%, 용매 프로필렌글리콜 모노메틸에테르 아세테이트 80중량%, 기타 첨가제로서 레벨링제 용도로 쓰이는 실리콘첨가제 0.5중량%를 첨가하여 2시간 동안 교반시켜 포지티브형 감광성 수지 조성물을 제조하였다.
12% by weight of the alkali-soluble polyamic acid-polyimide copolymer resin of Example 1, 0.1 part by weight of a diazide photosensitive compound ((1- [1- (4- hydroxyphenyl) isopropyl] -4- [ (4-hydroxyphenyl) ethyl] benzene) -1,2-naphthoquinonediazide-5-sulfonate), 6% 1.5 wt% of [1, 1 -bis (4-hydroxyphenyl) ethyl] benzene, 80 wt% of propylene glycol monomethyl ether acetate as a solvent, and 0.5 wt% of a silicon additive used as a leveling agent Lt; / RTI > for 1 hour to prepare a positive photosensitive resin composition.
실시예Example 6-8. 6-8.
실시예 2, 3 및 4의 알칼리 가용성 폴리아믹산-폴리이미드 공중합체 수지를 사용하여 실시예 5와 동일한 방법으로 실시예 6, 7 및 8의 포지티브형 감광성 수지 조성물을 제조하였다.
Using the alkali-soluble polyamic acid-polyimide copolymer resins of Examples 2, 3 and 4, positive-working photosensitive resin compositions of Examples 6, 7 and 8 were prepared in the same manner as in Example 5.
비교예Comparative Example 4-6. 4-6.
비교예 1, 2 및 3의 알칼리 가용성 폴리아믹산-폴리이미드 공중합체 수지를 사용하여 실시예 5와 동일한 방법으로 비교예 4, 5 및 6의 포지티브형 감광성 수지 조성물을 제조하였다.
The positive photosensitive resin compositions of Comparative Examples 4, 5 and 6 were prepared in the same manner as in Example 5 using the alkali soluble polyamic acid-polyimide copolymer resins of Comparative Examples 1, 2 and 3.
<절연막 제조>≪ Preparation of insulating film &
실시예Example 9. 9.
실시예 5의 포지티브형 감광성 수지 조성물을 bare glass 기재 상에 스핀코팅한 후, 120℃의 핫플레이트에서 120초간 예비열처리하여 두께 2.7±0.05㎛인 코팅막을 형성하였다. 상기 기재를 CD 8μm 크기의 hole 포토마스크를 이용하여 G,H,I 혼합광 자외선에 조사한 다음, 2.38% TMAH 알칼리 현상액으로 70초 동안 현상하고 40초 동안 수세하여 미노광 부분만 남겨 회로가 형성된다. 전자현미경으로 관찰하였을 때 hole 크기가 8μm가 나오는 노광량을 적정노광량의 기준으로 잡았다. 그 후 230℃의 핫플레이트에서 1시간 동안 가열하여 최종 두께 2.0㎛인 절연막을 형성하였다.
The positive photosensitive resin composition of Example 5 was spin-coated on a bare glass substrate and preliminarily heat-treated for 120 seconds on a hot plate at 120 ° C to form a coating film having a thickness of 2.7 ± 0.05 μm. The substrate was irradiated with G, H, and I mixed ultraviolet rays using a hole photomask having a CD 8 μm size, developed with a 2.38% TMAH alkali developer for 70 seconds, and rinsed for 40 seconds to leave only unexposed portions to form a circuit . When the electron microscope was used, the exposure amount at which the hole size was 8 mu m was determined based on the appropriate exposure amount. Thereafter, it was heated on a hot plate at 230 캜 for 1 hour to form an insulating film having a final thickness of 2.0 탆.
실시예Example 10-12. 10-12.
실시예 6, 7 및 8의 포지티브형 감광성 수지조성물을 사용하여 실시예 9와 동일한 방법으로 최종 두께 2.0㎛인 실시예 10, 11 및 12의 절연막을 제조하였다.
Using the positive photosensitive resin compositions of Examples 6, 7 and 8, insulating films of Examples 10, 11 and 12 having a final thickness of 2.0 占 퐉 were prepared in the same manner as in Example 9.
비교예Comparative Example 7-9. 7-9.
비교예 4, 5 및 6의 포지티브형 감광성 수지조성물을 사용하여 실시예 9와 동일한 방법으로 최종 두께 2.0㎛인 비교예 7, 8 및 9의 절연막을 제조하였다.
Using the positive photosensitive resin compositions of Comparative Examples 4, 5, and 6, insulating films of Comparative Examples 7, 8, and 9 having a final thickness of 2.0 탆 were prepared in the same manner as in Example 9.
<유기발광소자 제조>≪ Preparation of organic light emitting device &
유기발광소자의 제조 공정은 이 분야의 통상적으로 사용되는 방법을 따라 수행하였다.
The manufacturing process of the organic light emitting device was performed according to a method commonly used in this field.
실시예Example 13. 13.
실시예 9에서 제조된 절연막 층상에 격벽을 형성시킨다. 상기 격벽 위에 전자주입층, 전자수송층, 발광층, 정공수송층 및 정공주입층의 순으로 유기 박막을 증착시켰다. 그 위에 금속전극(Al)층을 증착하여 유기발광 소자를 제조하였다.
Barrier ribs were formed on the insulating film layer prepared in Example 9. [ An organic thin film was deposited on the barrier rib in the order of an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, and a hole injection layer. And a metal electrode (Al) layer was deposited thereon to prepare an organic light emitting device.
실시예Example 14-16 14-16
실시예 10, 11 및 12의 절연막을 사용하여 실시예 13과 동일한 방법으로 비교예 14, 15 및 16의 유기발광소자를 제조하였다.
Using the insulating films of Examples 10, 11, and 12, organic light emitting devices of Comparative Examples 14, 15, and 16 were produced in the same manner as in Example 13.
비교예Comparative Example 10-12 10-12
비교예 7, 8 및 9의 절연막을 사용하여 실시예 13과 동일한 방법으로 비교예 10, 11 및 12의 유기발광소자를 제조하였다.
Using the insulating films of Comparative Examples 7, 8, and 9, organic light emitting devices of Comparative Examples 10, 11, and 12 were produced in the same manner as in Example 13.
실험예Experimental Example 1. One. 잔사Residue 평가 evaluation
상기 실시예 5 내지 8 및 비교예 4 내지 6에서 제조된 포지티브형 감광성 수지 조성물을 bare glass 기재 상에 스핀코팅한 후, 120℃의 핫플레이트에서 120초간 예비열처리하여 건조 후 두께 2.7 ±0.5 μm의 코팅막을 형성하였다. 상기 기재를 CD 30μm(Line:Space=30:30) 크기의 stripe 포토마스크를 이용하여 G,H,I 혼합광 자외선을 조사하였다. 그 후 2.38% TMAH 알칼리 현상액으로 70초 동안 현상하고 40초 동안 수세하였다. 미노광 부분만 남겨 회로가 형성된다. 상기 회로를 SEM으로 관찰하여 현상된 부분에 잔사가 있는 정도를 판단하였다. 잔사가 없는 경우 'X', 잔사가 있는 경우에는 'O'로 표시하였다.
The positive photosensitive resin compositions prepared in Examples 5 to 8 and Comparative Examples 4 to 6 were spin-coated on a bare glass substrate, preliminarily heat-treated for 120 seconds on a hot plate at 120 ° C, To form a coating film. The above substrate was irradiated with G, H, I mixed optical ultraviolet rays using a stripe photomask having a CD 30 μm (Line: Space = 30: 30) size. It was then developed with 2.38% TMAH alkaline developer for 70 seconds and rinsed for 40 seconds. A circuit is formed by leaving only the unexposed portion. The circuit was observed with an SEM to determine the degree of residue on the developed portion. If there is no residue, it is indicated as 'X', and if residue is 'O'.
실험예Experimental Example 2. 밀착력 평가 2. Adhesion evaluation
상기 실시예 5 내지 8 및 비교예 4 내지 6에서 제조된 포지티브형 감광성 수지 조성물을 실험예 1과 같이 제조하였다. SEM으로 관찰하여 CD 30μm라인 부분이 남아있는지 확인하였다.
The positive photosensitive resin compositions prepared in Examples 5 to 8 and Comparative Examples 4 to 6 were prepared as in Experimental Example 1. SEM observation was performed to confirm that the CD 30 μm line portion remained.
화학식 1, 2 및 3의 몰비 1:0.02~0.23:0.8~1.2로 혼합한 알칼리 가용성 폴리아믹산-폴리이미드 공중합체 수지를 사용한 실시예 5 내지 8에서는 bare glass 상에 잔사없이 밀착력이 우수한 고해상도 패턴이 형성됨을 알 수 있었다. 비교예 4와 5는 잔사는 없으나 bare glass 상에 CD 30μm라인b부분의 패턴이 유실되는 것을 확인할 수 있었고, 비교예 6은 bare glass 상에 CD 30μm라인b부분의 패턴은 형성되었으나 잔사가 많이 남아있는 것을 확인하였다.
In Examples 5 to 8 using an alkali soluble polyamic acid-polyimide copolymer resin mixed at a molar ratio of 1: 0.02 to 0.23: 0.8 to 1.2 in the formulas 1, 2 and 3, a high-resolution pattern having excellent adhesion without residue on bare glass Respectively. In Comparative Examples 4 and 5, it was confirmed that the pattern of the CD 30 μm line b portion was lost on the bare glass. In Comparative Example 6, the pattern of the CD 30 μm line b portion was formed on the bare glass, Respectively.
실험예Experimental Example 3. 감도 평가 3. Sensitivity evaluation
실시예 9 내지 12 및 비교예 7 내지 9의 절연막을 사용하여 감도를 측정하였다.
The sensitivity of the insulating films of Examples 9 to 12 and Comparative Examples 7 to 9 was measured.
실험예Experimental Example 4. 유전율 평가 4. Evaluation of dielectric constant
실시예 9 내지 12 및 비교예 7 내지 9에서 제조한 절연막 위에 증착장비(Thermal Evaporator Model E306)를 사용하여 금속 전극(Al)을 2,000Å 두께로 증착시켰다. Precision Impedance Analyzer (Model:4294A, HP)를 이용하여 유전율을 측정하였다.
A metal electrode (Al) was deposited to a thickness of 2,000 Å on the insulating films prepared in Examples 9 to 12 and Comparative Examples 7 to 9 using a thermal evaporator Model E306. The permittivity was measured using a Precision Impedance Analyzer (Model: 4294A, HP).
실험예Experimental Example 5. 광 투과율 평가 5. Evaluation of light transmittance
자기분광광도계(shimadzu, Model UV-3101PC)를 이용하여 550nm 파장에서의 실시예 9 내지 12 및 비교예 7 내지 9의 절연막의 광 투과율을 측정하였다.
The light transmittance of the insulating films of Examples 9 to 12 and Comparative Examples 7 to 9 at a wavelength of 550 nm was measured using a magnetic spectrophotometer (shimadzu, Model UV-3101PC).
(mJ/cm2)Sensitivity
(mJ / cm 2 )
화학식 1, 2 및 3의 몰비 1:0.02~0.23:0.8~1.2로 혼합한 알칼리 가용성 폴리아믹산-폴리이미드 공중합체 수지를 사용한 실시예 9 내지 12와 상기 함량 범위를 벗어난 비교예 7 내지 9의 절연막은 모두 높은 감도와 3 이상 4 이하의 유전율을 보였으며, 광투과율 또한 우수하게 나타났다.
Examples 9 to 12 using an alkali-soluble polyamic acid-polyimide copolymer resin in which the molar ratios of formulas 1, 2 and 3 were mixed in the range of 1: 0.02 to 0.23: 0.8 to 1.2 and the insulating films of Comparative Examples 7 to 9 Showed a high sensitivity and a dielectric constant of 3 or more and 4 or less and excellent light transmittance.
실험예Experimental Example 6. 누설전류 측정 6. Leakage current measurement
실시예 13 내지 16 및 비교예 10 내지 12 의 유기발광소자의 전류 흐름을 통하여 누설전류량을 누설전류측정기를 이용하여 측정하였다.
The amounts of leakage currents through the current flow of the organic light emitting devices of Examples 13 to 16 and Comparative Examples 10 to 12 were measured using a leakage current meter.
실험예Experimental Example 7. 휘도 평가 7. Luminance evaluation
휘도계를 이용하여 실시예 13 내지 16 및 비교예 10 내지 12의 유기발광소자의 휘도를 측정하였다.
The luminance of the organic light emitting devices of Examples 13 to 16 and Comparative Examples 10 to 12 was measured using a luminance meter.
(nA)Leakage current
(nA)
(cd/m2)Luminance
(cd / m 2 )
실시예 13 내지 16의 유기발광소자는 누설전류와 휘도에서 모두 우수한 값을 보였다. 반면에, 비교예 10 내지 12의 유기발광소자는 누설전류와 휘도를 측정할 수 없었다. The organic luminescent devices of Examples 13 to 16 showed excellent values in both leakage current and luminance. On the other hand, the organic light emitting devices of Comparative Examples 10 to 12 were unable to measure leakage current and luminance.
따라서, 본 발명에서는 화학식 1, 2 및 3의 몰비 1:0.02~0.23:0.8~1.2로 혼합한 알칼리 가용성 폴리아믹산-폴리이미드 공중합체 수지를 사용한 포지티브형 감광성 수지는 잔사가 발생하지 않고, 높은 밀착력을 지니며, 우수한 누설전류값과 휘도값을 나타낸다는 것을 알 수 있다.Therefore, in the present invention, the positive photosensitive resin using the alkali soluble polyamic acid-polyimide copolymer resin mixed at the molar ratio of 1: 0.02-0.23: 0.8-1.2 of the formulas 1, 2 and 3 does not generate residue, And shows excellent leakage current values and luminance values.
Claims (14)
[화학식 1]
[화학식 2]
[화학식 3]
A positive photosensitive resin composition comprising an alkali soluble polyamic acid-polyimide copolymer resin, a diazide photosensitive compound, a sensitivity enhancer and a solvent, wherein the alkali soluble polyamic acid-polyimide copolymer resin comprises a diamine , The diamine represented by the general formula (2) and the dianhydride represented by the general formula (3) in a molar ratio of 1: 0.02 to 0.23: 0.8 to 1.2.
[Chemical Formula 1]
(2)
(3)
a)화학식 1, 2 및 3을 몰비 1:0.02~0.23:0.8~1.2로 혼합한 혼합물 5 내지 50중량%를 제 1용매 50 내지 95 중량%에 용해하여 폴리아믹산 용액을 제조하는 단계;
b)상기 폴리아믹산 용액을 화학경화제 및 이미드화 촉매로 부분 이미드화 시키는 단계; 및
c)상기 b)단계의 폴리아믹산 용액에 상기 폴리아믹산 용액에 대하여 5 내지 20 중량부의, 제 1용매보다 극성이 낮은 제 2용매를 첨가하고 건조하는 단계로 제조되는 포지티브형 감광성 수지 조성물.The polyamic acid-polyimide resin composition according to claim 1, wherein the polyamic acid-polyimide copolymer resin
a) preparing a polyamic acid solution by dissolving 5 to 50% by weight of a mixture of Formulas 1, 2 and 3 in a molar ratio of 1: 0.02 to 0.23: 0.8 to 1.2 in 50 to 95% by weight of a first solvent;
b) partially imidizing the polyamic acid solution with a chemical hardener and an imidization catalyst; And
c) adding a second solvent having a lower polarity than that of the first solvent to the polyamic acid solution of the step b) in an amount of 5 to 20 parts by weight based on the polyamic acid solution, and drying the resultant.
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