KR20140114750A - Ferroelectric thin film-forming sol-gel solution - Google Patents

Ferroelectric thin film-forming sol-gel solution Download PDF

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KR20140114750A
KR20140114750A KR1020140017047A KR20140017047A KR20140114750A KR 20140114750 A KR20140114750 A KR 20140114750A KR 1020140017047 A KR1020140017047 A KR 1020140017047A KR 20140017047 A KR20140017047 A KR 20140017047A KR 20140114750 A KR20140114750 A KR 20140114750A
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도시히로 도이
히데아키 사쿠라이
노부유키 소야마
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미쓰비시 마테리알 가부시키가이샤
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Abstract

A sol-gel solution for forming a ferroelectric thin film includes: a PZT-based compound; a polymer compound to adjust the viscosity and including polyvinyl pyrrolidone; and an organic dopant including N-methyl pyrrolidone, wherein, the amount of the PZT-based compound is greater than or equal to 17 mass % in terms of oxides, the molar ratio (PZT-based compound: polyvinyl pyrrolidone) of the PZT-based compound to the polyvinyl pyrrolidone is 1:0.1 to 1:0.5 in terms of monomers, and the amount of the organic dopant including N-methyl pyrrolidone in the sol-gel solution is 3 mass % to 13 mass %.

Description

강유전체 박막 형성용 졸겔액{FERROELECTRIC THIN FILM-FORMING SOL-GEL SOLUTION}{FERROELECTRIC THIN FILM-FORMING SOL-GEL SOLUTION}

본 발명은 강유전체 박막 형성용 졸겔액에 관한 것이다. 상세하게는 본 발명은 CSD (Chemical Solution Deposition) 법에 의해 도포되는 강유전체 박막 형성용 졸겔액의 도포 1 회에 의한 1 층을 수 100 ㎚ 를 초과하는 두께로 한 경우에도, 가소 (假燒), 소성 후에 크랙리스이며 또한 치밀한 강유전체 박막을 얻을 수 있는 강유전체 박막 형성용 졸겔액에 관한 것이다.The present invention relates to a sol-gel solution for forming a ferroelectric thin film. More particularly, the present invention relates to a ferroelectric thin film forming method in which even when a single layer of a sol-gel solution for forming a ferroelectric thin film applied by a chemical solution deposition (CSD) method has a thickness exceeding several hundreds nm, To a sol-gel solution for forming a ferroelectric thin film which is cracked after sintering and which can obtain a dense ferroelectric thin film.

본원은 2013년 3월 19일에 출원된 일본국 특허출원 제2013-056229호에 대하여 우선권을 주장하고, 그 내용을 여기에 원용한다.The present application claims priority to Japanese Patent Application No. 2013-056229 filed on March 19, 2013, the contents of which are incorporated herein by reference.

종래 CSD 법, 예를 들어 졸겔법에서는, 기판 상에 PZT 계 강유전체 박막 (「PZT 막」이라고 약기한다) 을 형성하는 경우, PZT 계 강유전체 박막 형성용 졸겔액 (「졸겔액」이라고 약기한다) 을 이용하여 도포 1 회로 1 층을 성막할 때, 막두께가 100 ㎚ 정도가 한계로 여겨져 왔다. 이는 100 ㎚ 를 초과하는 두께의 막을 가소, 소성할 때, PZT 막 중에 발생하는 인장 응력이 동일 막 중에 불균일하게 발생하는 결과, 동일 막 중에 크랙이 자주 발생하기 때문이다. 따라서, 수 ㎛ 후막의 PZT 막을 얻으려면 1 층을 보다 얇게 하여 수 10 회 도포하면서, 가소, 소성을 반복해야 하는 것이 현상황이다. 그러나, 이러한 방법으로는 생산 효율이 저하되기 때문에 성막 비용을 향상시키게 된다. In the conventional CSD method, for example, in the sol-gel method, when a PZT ferroelectric thin film (referred to as a "PZT film") is formed on a substrate, a sol-gel solution for forming a PZT ferroelectric thin film It has been considered that a film thickness of about 100 nm is the limit when one layer of coating is formed. This is because, when the film having a thickness exceeding 100 nm is calcined and fired, a tensile stress generated in the PZT film occurs unevenly in the same film, and cracks often occur in the same film. Therefore, in order to obtain a PZT film having a few 탆 thick film, it is necessary to repeat the calcining and firing while applying one layer several times and applying it several times. However, with this method, the production efficiency is lowered and the film forming cost is increased.

그래서, 상기 문제에 대하여, 졸겔액의 조제에 사용하는 유기 용매에 프로필렌글리콜을 사용하여, 졸겔액의 도포 1 회로 1 층이 200 ㎚ 이상인 후막을 얻을 수 있는 졸겔액이 제안되어 있다 (예를 들어, 일본 공개특허공보 2001-261338호 (청구항 1, 단락 [0016] ∼ [0024], 표 1) 참조). 또, 고농도의 졸겔액에 고분자를 첨가함으로써, 성막 중에 발생하는 인장 응력을 완화시켜, 졸겔액의 도포 1 회로 얻어지는 1 층을 두껍게 할 수 있는 방법도 제안되어 있다 (예를 들어, J Sol-Gel Sci Technol (2008) 47 : 316-325 참조).In view of the above problems, there has been proposed a sol-gel liquid in which propylene glycol is used as an organic solvent used for preparing a sol-gel liquid and a thick film having a thickness of 200 nm or more per layer of the sol-gel solution is applied (for example, , Japanese Laid-Open Patent Publication No. 2001-261338 (Claim 1, paragraphs [0016] to [0024], Table 1)). Further, a method has been proposed in which a polymer is added to a sol-gel solution at a high concentration to alleviate a tensile stress generated during the film formation, thereby thickening one layer obtained by applying the sol-gel solution (see, for example, J Sol-Gel Sci Technol (2008) 47: 316-325).

그 밖에 일본 공표특허공보 2001-521976호에서는, 코어/쉘 폴리머 바인더와 페라이트 분말을 분산시켜 얻는 잉크젯 인쇄용 잉크 조성물의 용매의 하나로서 N-메틸피롤리돈을 사용하는 것이 개시되어 있다(예를 들어, 단락 [0013],[0188]참조). 그러나, 일본 공표특허공보 2001-521976호에 개시된 조성물은 잉크젯 인쇄용 조성물로, 상기 코어/쉘 폴리머 바인더에 의해 내스미어 견뢰성을 향상시키고 있다. 즉 일본 공표특허공보 2001-521976호에 개시된 조성물은, 하기에 서술하는 본 발명의 졸겔액과는 구성도 목적도 완전히 상이하다. 아울러, 일본 공표특허공보 2001-521976호에 개시된 조성물은 페라이트 분말을 용매에 분산시켜 얻어진 분산액으로 이루어지는 조성물로, 금속 알콕시드 등을 원료로 하여 사용하는 본 발명의 졸겔로 이루어지는 조성물과는 구성이 완전히 상이하다.In addition, Japanese Patent Application Laid-Open No. 2001-521976 discloses the use of N-methylpyrrolidone as a solvent of an ink composition for ink-jet printing obtained by dispersing a core / shell polymer binder and a ferrite powder (for example, , Paragraphs [0013] and [0188]). However, the composition disclosed in Japanese Laid-Open Patent Publication No. 2001-521976 is a composition for ink-jet printing, and the smear fastness of the core / shell polymer binder is improved by the above-mentioned core / shell polymer binder. That is, the composition disclosed in Japanese Unexamined Patent Publication (Kokai) No. 2001-521976 is completely different from the sol-gel liquid of the present invention described below in constitution and purpose. The composition disclosed in Japanese Unexamined Patent Publication (Kokai) No. 2001-521976 is a composition comprising a dispersion obtained by dispersing ferrite powder in a solvent. The composition is completely composed of the sol-gel composition of the present invention using a metal alkoxide or the like as a raw material It is different.

상기 제안되어 있는 졸겔액을 이용해도, 크랙리스이며 치밀한 막구조를 갖고 또한 실용상 충분한 특성을 구비한 PZT 막을 제조하는 것은 곤란한 것을 본 발명자들은 지견하였다.The inventors of the present invention have found that it is difficult to produce a PZT film having a cracked, dense film structure and sufficient characteristics for practical use even using the sol-gel solution proposed above.

본 발명의 목적은, 졸겔액의 도포 1 회에 의한 1 층을 수 100 ㎚ 를 초과하는 층두께로 한 경우에도 가소, 소성 후에 크랙리스이며 치밀한 PZT 막을 성막할 수 있는 PZT 계 강유전체 박막 형성용 졸겔액을 제공하는 것에 있다. It is an object of the present invention to provide a PZT ferroelectric thin film forming sol which can crack and form a dense PZT film after firing and firing even when one layer formed by applying the sol-gel solution has a layer thickness exceeding several hundred nm Thereby providing the gel solution.

본 발명의 제 1 관점은, 강유전체 박막 형성용 졸겔액으로서, 상기 졸겔액이, PZT 계 화합물과, 폴리비닐피롤리돈을 함유하는 점도 조정용 고분자 화합물과, N-메틸피롤리돈을 함유하는 유기 도펀트를 함유하고, According to a first aspect of the present invention, there is provided a ferroelectric thin film-forming sol-gel solution, wherein the sol-gel solution contains a PZT compound, a viscosity-adjusting polymer compound containing polyvinylpyrrolidone, Dopants,

상기 PZT 계 화합물이 산화물 환산으로 17 질량% 이상 함유되고, 상기 PZT 계 화합물에 대한 상기 폴리비닐피롤리돈의 몰비가 모노머 환산으로 PZT 계 화합물 : 폴리비닐피롤리돈 = 1 : 0.1 ∼ 0.5 이며, 상기 N-메틸피롤리돈이 상기 졸겔액의 3 질량% ∼ 13 질량% 함유되는 것을 특징으로 한다. Wherein the PZT compound is contained in an amount of 17 mass% or more in terms of an oxide, the molar ratio of the polyvinylpyrrolidone to the PZT compound is in a ratio of PZT compound: polyvinylpyrrolidone = 1: 0.1 to 0.5 in terms of monomer, Methylpyrrolidone is contained in an amount of 3% by mass to 13% by mass of the sol-gel solution.

본 발명의 제 2 관점은, 제 1 관점에 기초하는 발명으로서, 또한 상기 폴리비닐피롤리돈의 k 값이 15 ∼ 90 의 범위 내에 있는 상기 제 1 관점에서 기재된 강유전체 박막 형성용 졸겔액인 것이 바람직하다.The second aspect of the present invention is the invention based on the first aspect and is a sol-gel solution for forming a ferroelectric thin film described in the first aspect, wherein the k value of the polyvinylpyrrolidone is in the range of 15 to 90 Do.

여기서 k 값은, 분자량과 서로 관련있는 점성 특성값으로, 모세관 점도계에 의해 측정되는 상대 점도값 (25 ℃) 을 이용하여, 하기의 Fikentscher 의 식에 의해 계산되는 값이다. Here, the value k is a value calculated by the following Fikentscher's equation using a relative viscosity value (25 DEG C) measured by a capillary viscometer, which is a viscous characteristic value correlated with the molecular weight.

k 값 = (1.5 logηrel - 1)/(0.15 + 0.003 c) k value = (1.5 log? rel-1) / (0.15 + 0.003 c)

+ (300 clogηrel + (c + 1.5 clogηrel)2)1/2/(0.15 c + 0.003 c2)+ (300 clog? Rel + (c + 1.5 clog? Rel) 2 ) 1/2 / ( 0.15 c + 0.003 c 2 )

(ηrel ; 폴리비닐피롤리돈 수용액의 물에 대한 상대 점도 (25 ℃). c ; 폴리비닐피롤리돈 수용액 중의 폴리비닐피롤리돈 농도 (wt%)) relative viscosity (25 DEG C) of polyvinylpyrrolidone aqueous solution to water (c); polyvinylpyrrolidone concentration (wt%) in aqueous polyvinylpyrrolidone solution)

본 발명의 제 3 관점은, 제 1 관점 또는 제 2 관점에 기초하는 강유전체 박막 형성용 졸겔액을 이용하여 강유전체 박막을 형성하는 방법인 것을 특징으로 한다.A third aspect of the present invention is a method for forming a ferroelectric thin film using a sol-gel liquid for forming a ferroelectric thin film based on the first or second aspect.

본 발명의 제 1 관점의 강유전체 박막 형성용 졸겔액은, PZT 계 화합물과, 폴리비닐피롤리돈을 함유하는 점도 조정용 고분자 화합물과, 극성 용매인 N-메틸피롤리돈을 함유하는 유기 도펀트를 함유하고, The sol-gel solution for forming a ferroelectric thin film according to the first aspect of the present invention comprises a PZT-based compound, a viscosity-adjusting polymer compound containing polyvinylpyrrolidone, and an organic dopant containing N-methylpyrrolidone as a polar solvent and,

상기 PZT 계 화합물이 산화물 환산으로 17 질량% 이상 함유되고, 상기 PZT 계 화합물에 대한 상기 폴리비닐피롤리돈의 몰비가 모노머 환산으로 PZT 계 화합물 : 폴리비닐피롤리돈 = 1 : 0.1 ∼ 0.5 이며, 상기 N-메틸피롤리돈이 상기 졸겔액의 3 질량% ∼ 13 질량% 함유되어 있다. 본 발명에서는 상기 졸겔액의 구성에 의해, 건조 과정에서 적당히 막에 간극을 형성하여, 분해에 수반되는 가스 등을 효과적으로 막 중으로부터 제거할 수 있다는 이유에서, 당해 졸겔액을 PZT 계 강유전체 박막의 제조에 사용하면, 크랙리스이며 치밀한 막을 갖고 또한 실용상 충분한 특성을 구비한 PZT 막을 제조할 수 있다.Wherein the PZT compound is contained in an amount of 17 mass% or more in terms of an oxide, the molar ratio of the polyvinylpyrrolidone to the PZT compound is in a ratio of PZT compound: polyvinylpyrrolidone = 1: 0.1 to 0.5 in terms of monomer, Methylpyrrolidone is contained in an amount of 3% by mass to 13% by mass of the sol-gel solution. In the present invention, because of the constitution of the sol-gel solution, it is possible to appropriately form a gap in the membrane during the drying process and effectively remove the gas or the like accompanying decomposition from the membrane, so that the sol-gel solution is used as a PZT ferroelectric thin film It is possible to produce a PZT film having a cracked, dense film and having sufficient characteristics for practical use.

본 발명의 제 2 관점의 강유전체 박막 형성용 졸겔액에서는, 제 1 관점에 기초하는 발명으로서, 또한 상기 폴리비닐피롤리돈의 k 값을 15 ∼ 90 의 범위 내로 하였기 때문에, 당해 졸겔액을 PZT 계 강유전체 박막의 제조에 사용하면, 크랙리스이며 치밀한 막구조를 갖고 또한 실용상 충분한 특성을 구비한 더욱 양호한 PZT 막을 제조할 수 있다. In the sol-gel liquid for forming a ferroelectric thin film according to the second aspect of the present invention, as the invention based on the first aspect, the k value of the polyvinylpyrrolidone is within the range of 15 to 90. Therefore, the sol- When used in the production of a ferroelectric thin film, a better PZT film having a cracked, dense film structure and sufficient practical properties can be produced.

본 발명의 제 3 관점의 강유전체 박막의 형성 방법에서는, 크랙리스이며 치밀한 막구조를 갖고 또한 실용상 충분한 특성을 구비한 더욱 양호한 PZT 막을 제조할 수 있다. According to the method for forming a ferroelectric thin film of the third aspect of the present invention, a better PZT film having a cracked, dense film structure and sufficient practical characteristics can be produced.

본 실시형태에 관련된 강유전체 박막 형성용 졸겔액을, PZT 계 강유전체 박막 형성용 졸겔액 (이하 「PZT 졸겔액」이라고 약기한다) 을 대표예로 하여 이하에 설명한다. A sol-gel solution for forming a ferroelectric thin film according to the present embodiment will be described below as a representative example of a PZT-based ferroelectric thin film-forming sol-gel solution (hereinafter referred to as " PZT sol-gel solution "

본 실시형태에 관련된 PZT 졸겔액은, PZT 계 화합물과, 폴리비닐피롤리돈 (PVP) 을 함유하는 점도 조정용 고분자 화합물과, N-메틸피롤리돈을 함유하는 유기 도펀트를 함유하고, 상기 PZT 계 화합물이 산화물 환산으로 17 질량% 이상 함유되고, 상기 PZT 계 화합물에 대한 상기 폴리비닐피롤리돈의 몰비가 모노머 환산으로 PZT 계 화합물 : 폴리비닐피롤리돈 = 1 : 0.1 ∼ 0.5 이며, 상기 N-메틸피롤리돈이 상기 졸겔액의 3 질량% ∼ 13 질량% 함유하는 것이다. The PZT sol-gel liquid according to this embodiment contains a PZT compound, a viscosity-adjusting polymer compound containing polyvinylpyrrolidone (PVP), and an organic dopant containing N-methylpyrrolidone, and the PZT system Wherein the molar ratio of the polyvinylpyrrolidone to the PZT-based compound is in a range of 1: 0.1 to 0.5, the PZT-based compound is polyvinylpyrrolidone in terms of monomer, Methyl pyrrolidone is contained in an amount of 3% by mass to 13% by mass of the sol-gel solution.

우선, 본 실시형태의 PZT 졸겔액의 기본 함유물인 PZT 화합물, 폴리비닐피롤리돈을 함유하는 점도 조정용 고분자 화합물, N-메틸피롤리돈을 함유하는 유기 도펀트에 대하여 설명한다. First, a description will be given of a PZT compound, a viscosity-adjusting polymer compound containing polyvinylpyrrolidone, and an organic dopant containing N-methylpyrrolidone, which are basic contents of the PZT sol-gel solution of the present embodiment.

PZT 계 화합물은, PLZT, PMnZT, PNbZT 등의 PZT 이외의 화합물을 포함한다. PZT 계 화합물의 원료는, Pb, La, Zr 및 Ti 의 각 금속 원소에, 유기기가 그 산소 또는 질소 원자를 개재하여 결합되어 있는 화합물이 바람직하다. 예를 들어, 금속 알콕시드, 금속 디올 착물, 금속 트리올 착물, 금속 카르복실산염, 금속 β-디케토네이트 착물, 금속 β-디케토에스테르 착물, 금속 β-이미노케토 착물, 및 금속 아미노 착물로 이루어지는 군에서 선택된 1 종 또는 2 종 이상이 예시된다. 특히 바람직한 화합물은, 금속 알콕시드, 그 부분 가수분해물, 유기산염이다. The PZT compound includes compounds other than PZT such as PLZT, PMnZT, and PNbZT. The raw material of the PZT compound is preferably a compound in which an organic group is bonded to each metal element of Pb, La, Zr and Ti via an oxygen or nitrogen atom. For example, metal alkoxide, metal diol complex, metal triol complex, metal carboxylate, metal? -Diketonate complex, metal? -Diketo ester complex, metal? -Iminocate complex, and metal amino complex , And at least one selected from the group consisting of Particularly preferred compounds are metal alkoxides, partial hydrolyzates thereof, and organic acid salts.

이 중, Pb 화합물, La 화합물로는, 아세트산염 (아세트산납 : Pb(OAc)2, 아세트산란탄 : La(OAc)3), 납디이소프로폭사이드 : Pb(OiPr)2, 란탄트리이소프로폭사이드 : La(OiPr)3 등을 들 수 있다. Ti 화합물로는, 티탄테트라에톡사이드 : Ti(OEt)4, 티탄테트라이소프로폭사이드 : Ti(OiPr)4, 티탄테트라 n-부톡사이드 : Ti(OiBu)4, 티탄테트라이소부톡사이드 : Ti(OiBu)4, 티탄테트라 t-부톡사이드 : Ti(OtBu))4, 티탄디메톡시디이소프로폭사이드 : Ti(OMe)2(OiPr)2 등의 알콕시드를 들 수 있다. Zr 화합물로는, 상기 Ti 화합물과 동일한 알콕시드류가 바람직하다. 금속 알콕시드는 그대로 사용해도 되지만, 분해를 촉진시키기 위해 그 부분 가수분해물을 사용해도 된다. Of these, the Pb compound and the La compound include an acetate salt (lead acetate: Pb (OAc) 2 , lanthanum acetate: La (OAc) 3 ), lead diisopropoxide: Pb (OiPr) 2 , lanthanum triisopropoxide And side: La (OiPr) 3 . Examples of the Ti compound include titanium tetraethoxide: Ti (OEt) 4 , titanium tetraisopropoxide: Ti (OiPr) 4 , titanium tetra n-butoxide: Ti (OiBu) 4 , titanium tetraisobutoxide: Ti (OiBu) 4 , titanium tetra-t-butoxide: Ti (OtBu) 4 and titanium dimethoxydiisopropoxide: Ti (OMe) 2 (OiPr) 2 . As the Zr compound, the same alkoxide as the Ti compound is preferable. The metal alkoxide may be used as it is, but the partial hydrolyzate may be used to promote decomposition.

PZT 졸겔액 중의 PZT 계 화합물은, 상기의 원료를 이용하여 후술하는 PZT 계 화합물을 함유하는 PZT 졸겔액의 원료액의 조제 방법에 의해 얻어진다.The PZT-based compound in the PZT sol-gel solution is obtained by a method for preparing a raw material solution of a PZT sol-gel solution containing a PZT-based compound described later using the above-mentioned raw materials.

폴리비닐피롤리돈을 함유하는 점도 조정용 고분자 화합물에 있어서, 폴리비닐피롤리돈 (PVP) 은 액 점도를 조정할 수 있는 화합물이다. 보다 구체적으로는 상기 서술한 k 값에 의해 상대 점도를 결정하여 조정할 수 있다. 여기서 k 값이란, 분자량과 서로 관련있는 점성 특성값으로, 모세관 점도계에 의해 측정되는 상대 점도값 (25 ℃) 을 하기의 Fikentscher 의 식에 적용하여 산출되는 값이다.In the viscosity-adjusting polymer compound containing polyvinylpyrrolidone, polyvinylpyrrolidone (PVP) is a compound capable of adjusting the liquid viscosity. More specifically, the relative viscosity can be determined and adjusted by the above-described k value. Here, the k value is a value calculated by applying the relative viscosity value (25 DEG C) measured by the capillary viscometer to the following Fikentscher's equation, which is a viscous characteristic value correlated to the molecular weight.

k 값 = (1.5 logηrel - 1)/(0.15 + 0.003 c) k value = (1.5 log? rel-1) / (0.15 + 0.003 c)

+ (300 clogηrel + (c + 1.5 clogηrel)2)1/2/(0.15 c + 0.003 c2)+ (300 clog? Rel + (c + 1.5 clog? Rel) 2 ) 1/2 / ( 0.15 c + 0.003 c 2 )

상기 식 중, 「ηrel」은 폴리비닐피롤리돈 수용액의 물에 대한 상대 점도 (25 ℃) 를 나타내고, 「c」는 폴리비닐피롤리돈 수용액 중의 폴리비닐피롤리돈 농도 (wt%) 를 나타낸다.Represents the relative viscosity (25 DEG C) of the aqueous solution of polyvinylpyrrolidone with respect to water, and " c " represents the concentration of polyvinylpyrrolidone (wt%) in the aqueous solution of polyvinylpyrrolidone .

본 실시형태에서는, k 값이 15 ∼ 90 의 범위 내인 폴리비닐피롤리돈이 바람직하다. k 값이 15 미만에서는 두꺼운 막을 얻기 위한 충분한 점도를 얻는 데에 불충분하기 때문에 문제가 있고, 90 보다 초과하면 점도가 지나치게 높기 때문에, 균일하게 도포하기가 곤란해진다는 문제가 있기 때문이다. 보다 바람직하게는 k 값이 30 ∼ 45 이다.In the present embodiment, polyvinyl pyrrolidone having a k value in the range of 15 to 90 is preferable. When the value of k is less than 15, there is a problem because it is insufficient to obtain a sufficient viscosity for obtaining a thick film. When the value is more than 90, there is a problem that the viscosity is too high and uniform application is difficult. More preferably, the k value is 30 to 45.

그 밖에 고분자 화합물로는, 중합도 100 ∼ 1000 의 폴리에틸렌글리콜 등을 사용하면 된다. 중합도가 100 미만에서는 충분한 점도가 얻어지지 않기 때문에 문제가 있고, 중합도가 1000 을 초과하면 점도가 지나치게 높기 때문에, 균일하게 도포하기가 곤란해지는 문제가 있기 때문이다.As the other polymer compound, polyethylene glycol having a degree of polymerization of 100 to 1000 may be used. If the degree of polymerization is less than 100, a sufficient viscosity can not be obtained. Thus, there is a problem. When the degree of polymerization is more than 1000, the viscosity is excessively high, which makes it difficult to apply uniformly.

고분자 화합물 100 질량% 에 있어서의 폴리비닐피롤리돈의 함유량은 50 ∼ 100 질량% 인 것이 바람직하고, 80 ∼ 100 질량% 이면 보다 바람직하다.The content of polyvinylpyrrolidone in 100 mass% of the polymer compound is preferably 50 to 100 mass%, more preferably 80 to 100 mass%.

N-메틸피롤리돈을 함유하는 유기 도펀트와 상기 폴리비닐피롤리돈을 함유하는 고분자 화합물의 조합에 의해, 본 발명의 목적인 졸겔액의 도포 1 회에 의한 1 층을 수 100 ㎚ 를 초과하는 층두께로 한 경우에도 가소, 소성 후에 크랙리스이며 치밀한 PZT 막을 성막할 수 있는 PZT 졸겔액을 제조할 수 있다.By combining the organic dopant containing N-methylpyrrolidone and the polymer compound containing polyvinylpyrrolidone, one layer by applying the sol-gel solution for the purpose of the present invention can be formed into a layer having a thickness of several hundreds nm It is possible to produce a PZT sol gel liquid which is cracked and can form a dense PZT film after calcination and firing.

유기 도펀트는, 추가로 모노에탄올아민이나 디에탄올아민 등의 에탄올아민류를 함유하는 것이 바람직하다. 이들 에탄올아민류는, 금속 알콕시드에 배위하여 용액의 보존 안정성을 높이는 효과가 있기 때문에 있다.The organic dopant preferably further contains an ethanolamine such as monoethanolamine or diethanolamine. These ethanol amines are effective for enhancing the storage stability of the solution to be fed to the metal alkoxide.

유기 도펀트 100 질량% 에 있어서, N-메틸피롤리돈의 함유량은 80 ∼ 100 질량% 인 것이 바람직하고, 90 ∼ 100 질량% 이면 보다 바람직하다. 한편 유기 도펀트 100 질량% 에 있어서, 에탄올아민류의 함유량은 0 ∼ 30 질량% 인 것이 바람직하고, 0 ∼ 20 질량% 이면 보다 바람직하다.In 100 mass% of the organic dopant, the content of N-methylpyrrolidone is preferably 80 to 100 mass%, more preferably 90 to 100 mass%. On the other hand, the content of the ethanolamine is preferably 0 to 30 mass%, more preferably 0 to 20 mass%, in 100 mass% of the organic dopant.

다음으로, 상기 기본 함유물의 PZT 졸겔액에 대한 처방에 대하여 설명한다.Next, the prescription for the PZT sol-gel solution of the basic inclusion will be described.

우선, 상기 PZT 화합물은, PZT 졸겔액에 있어서 산화물 환산으로 17 질량% 함유되도록 한다. 이는 17 질량% 미만이면 전구 물질의 농도가 낮아 충분한 막두께가 얻어지지 않는 문제가 있기 때문이다. 바람직하게는 23 질량% 이하로 한다. 이는 23 질량% 를 초과하면 희석제인 저급 알코올의 비율이 내려가, 도막성이나 보존 안정성의 악화를 초래할 우려가 있다. First, the PZT compound is contained in an amount of 17 mass% in terms of oxide in the PZT sol-gel solution. If the content is less than 17 mass%, the concentration of the precursor is low and a sufficient film thickness can not be obtained. And preferably 23 mass% or less. If it exceeds 23 mass%, the proportion of the lower alcohol which is a diluent is lowered, which may lead to deterioration of the coating film property and storage stability.

PZT 졸겔액에 있어서의 PZT 화합물의 보다 바람직한 함유량은 17 질량% 이상 28 질량% 이하이다.A more preferable content of the PZT compound in the PZT sol gel solution is 17 mass% or more and 28 mass% or less.

또한, 여기서 산화물 환산이란, PZT 졸겔액에 함유되는 금속 원소가 모두 산화물이 되었다고 가정하였을 때에, PZT 졸겔액 100 질량% 에서 차지하는 금속 산화물의 비율을 말한다.Here, oxide conversion refers to the ratio of the metal oxide occupying 100% by mass of the PZT sol-gel solution when it is assumed that all the metal elements contained in the PZT sol-gel solution are oxides.

다음으로, 상기 PZT 계 화합물에 대한 상기 폴리비닐피롤리돈의 몰비가 모노머 환산으로 PZT 계 화합물 : 폴리비닐피롤리돈 = 1 : 0.1 ∼ 0.5 가 되도록 한다.Next, the molar ratio of the polyvinylpyrrolidone to the PZT-based compound is adjusted to be PZT compound: polyvinylpyrrolidone = 1: 0.1 to 0.5 in terms of the monomer.

여기서, 모노머 환산이란, 폴리머를 구성하는 모노머의 분자량을 기준 (1 몰) 으로 하여 폴리머의 분자량을 환산하여 얻은 값이다.Here, the monomer conversion is a value obtained by converting the molecular weight of the polymer with the molecular weight of the monomer constituting the polymer as a reference (1 mole).

이는 당해 몰비가 1 : 0.1 미만에서는 충분한 점도가 얻어지지 않는 데다가, 응력 완화도 실시할 수 없어 크랙 발생의 문제가 있고, 1 : 0.5 를 초과하면 막 중에 보이드가 다수 발생한다는 문제가 있기 때문이다. 더욱 바람직하게는 PZT 계 화합물 : 폴리비닐피롤리돈 = 1 : 0.2 ∼ 0.45 로 한다. 이는 당해 몰비가 1 : 0.2 미만에서는 프로세스 온도의 폭이 좁아 크랙이 잘 발생하게 되는 문제가 있고, 1 : 0.45 를 초과하면 약간 보이드가 발생하는 경우가 있는 문제가 있기 때문이다. This is because when the molar ratio is less than 1: 0.1, sufficient viscosity can not be obtained, stress relaxation can not be performed, and there is a problem of cracking. When the molar ratio is more than 1: 0.5, More preferably, the PZT compound: polyvinylpyrrolidone is 1: 0.2 to 0.45. This is because when the molar ratio is less than 1: 0.2, there is a problem that the width of the process temperature is narrow and cracks are generated well, and when the molar ratio exceeds 1: 0.45, there is a problem that a little void occurs.

그리고, N-메틸피롤리돈은 PZT 계 졸겔액 100 질량% 중에 3 질량% ∼ 13 질량% 함유되도록 한다. 이는 3 질량% 미만이면 첨가량이 불충분하여 크랙 발생을 억제할 수 없는 문제가 있고, 13 질량% 를 초과하면 용액이 지나치게 희석되어 1 층당 도포 막두께가 얇아지는 문제가 있기 때문이다. 더욱 바람직하게는 6.5 질량% ∼ 10 질량% 로 한다. 이는 6.5 질량% 미만이면 크랙이 잘 발생하는 문제가 있고, 10 질량% 를 초과하면 1 층당 도포 막두께가 얇아지는 문제가 있기 때문이다. And, N-methylpyrrolidone is contained in 3 mass% to 13 mass% in 100 mass% of PZT sol-gel solution. If the content is less than 3% by mass, the addition amount is insufficient and cracking can not be suppressed. If the content exceeds 13% by mass, the solution is excessively diluted and the coating thickness per one layer becomes thin. And more preferably 6.5% by mass to 10% by mass. If the content is less than 6.5% by mass, cracks are likely to occur. If the content is more than 10% by mass, there is a problem that the thickness of the coating film per one layer is reduced.

또한, 상기 기본 함유물과 상기 처방에 따라, PZT 계 화합물을 함유하는 PZT 졸겔액의 원료액의 조제 방법을 설명한다. A method of preparing a raw material liquid for a PZT sol-gel solution containing a PZT-based compound will be described in accordance with the above-mentioned basic inclusion and the above-mentioned prescription.

PZT 졸겔액의 원료액의 조제는 이하의 액합성 플로우에 의한다. 먼저, 반응 용기에, Zr 원료와 Ti 원료와 안정화제를 넣고, 질소 분위기 중에서 환류시킨다. 그 다음에 환류 후의 화합물에 Pb 원료를 첨가함과 함께, 용제를 첨가하여, 질소 분위기 중에서 환류시키고, 감압 증류하여 부생성물을 제거한 후, 이 용액에 추가로 프로필렌글리콜을 첨가하여 농도를 조절하고, 다시 이 용액에 에탄올을 첨가한다. 보다 전형적으로는, PZT 계 화합물의 조성비 Pb/Zr/Ti 가 115/52/48 (산화물 환산으로 17 질량% 이상) 이 되도록, Pb(CH3COO)3)·3H2O, Zr(Oi-Pr)4, Ti(Oi-Pr)4 를 각각 소정 중량 칭량하여, 그것들을 에탄올 등의 용매에 용해시켜 원료 용액을 얻는다. 필요에 따라 안정화제를 원료 용액에 첨가하는데 이에 대해서는 하기에 서술한다. The preparation of the raw material liquid for the PZT sol gel liquid is based on the following liquid synthesis flow. First, a Zr raw material, a Ti raw material, and a stabilizer are placed in a reaction vessel and refluxed in a nitrogen atmosphere. Then, a Pb raw material is added to the refluxed compound, and a solvent is added, refluxing in a nitrogen atmosphere, and distillation under reduced pressure to remove by-products. Propylene glycol is further added to the solution to adjust the concentration, Again add ethanol to this solution. More typically, Pb (CH 3 COO) 3 ) 3H 2 O and Zr (Oi-O) are added so that the composition ratio Pb / Zr / Ti of the PZT compound is 115/52/48 (17 mass% Pr) 4 , and Ti (Oi-Pr) 4 are weighed to a predetermined weight, and they are dissolved in a solvent such as ethanol to obtain a raw material solution. If necessary, a stabilizer is added to the raw material solution, which will be described below.

PZT 계 화합물의 조성비 Pb/Zr/Ti 는 목적하는 PZT 계 화합물의 조성에 따라 적절히 변경할 수 있다.The composition ratio Pb / Zr / Ti of the PZT compound can be appropriately changed according to the composition of the desired PZT compound.

다음으로, 원료 용액에 함유되는 첨가물의 첨가, 혼합에 대하여 설명한다.Next, addition and mixing of the additives contained in the raw material solution will be described.

본 실시형태에 관련된 PZT 졸겔액에서는, 상기와 같이 하여 얻어지는 원료 용액에 몰비가 모노머 환산으로 PZT : 폴리비닐피롤리돈 = 1 : 0.1 ∼ 0.5 가 되도록 폴리비닐피롤리돈을 함유하는 점도 조정용 고분자 화합물을 첨가한다. 당해 몰비의 근거는 상기에 서술한 바와 같다. 원료 용액에 폴리비닐피롤리돈을 상기의 몰비로 첨가한 후, 당해 용액을 24 시간 실온에서 교반한다. 그리고, N-메틸피롤리돈을 PZT 계 졸겔액의 3 질량% ∼ 13 질량% 의 농도가 되도록 첨가하고, 2 시간 교반 후, 24 시간 실온에서 안정화시킨다. In the PZT sol-gel solution according to the present embodiment, the viscosity adjusting polymer compound containing polyvinylpyrrolidone such that the molar ratio of PZT: polyvinylpyrrolidone in terms of monomer is 1: 0.1 to 0.5, Lt; / RTI > The basis of the molar ratio is as described above. After polyvinylpyrrolidone is added to the raw material solution at the above-mentioned molar ratio, the solution is stirred at room temperature for 24 hours. Then, N-methylpyrrolidone is added so as to have a concentration of 3% by mass to 13% by mass of the PZT-based sol-gel solution, stirred for 2 hours, and stabilized at room temperature for 24 hours.

또, 함유해야 하는 안정화제나 사용하는 용매는 이하와 같다. 이 PZT 계 졸겔액 중에는, 필요에 따라 안정화제로서, β-디케톤류 (예를 들어, 아세틸아세톤, 헵타플루오로부타노일피발로일메탄, 디피발로일메탄, 트리플루오로아세틸아세톤, 벤조일아세톤 등), β-케톤산류 (예를 들어, 아세토아세트산, 프로피오닐아세트산, 벤조일아세트산 등), β-케토에스테르류 (예를 들어, 상기 케톤산의 메틸, 프로필, 부틸 등의 저급 알킬에스테르류), 옥시산류 (예를 들어, 락트산, 글리콜산, α-옥시부티르산, 살리실산 등), 상기 옥시산의 저급 알킬에스테르류, 옥시케톤류 (예를 들어, 디아세톤알코올, 아세토인 등), 디올, 트리올, 고급 카르복실산, 알칸올아민류 (예를 들어, 디에탄올아민, 트리에탄올아민, 모노에탄올아민), 다가 아민 등을 (안정화제 분자수)/(금속 원자수) 로 0.2 ∼ 3 정도 첨가해도 된다.The stabilizer to be contained and the solvent to be used are as follows. In this PZT-based sol gel liquid, if necessary, a stabilizer such as? -Diketones (e.g., acetyl acetone, heptafluorobutanoyl pivaloyl methane, dipivaloyl methane, trifluoroacetylacetone, benzoyl acetone, (for example, lower alkyl esters such as methyl, propyl, butyl and the like of the above-mentioned ketonic acid),? -ketoamides (for example, (E.g., lactic acid, glycolic acid,? -Oxybutyric acid, salicylic acid, etc.), lower alkyl esters of the above oxyacids, oxyketones (e.g., diacetone alcohol, acetone, etc.) (Number of stabilizing agent molecules) / (number of metal atoms) may be added in an amount of 0.2 to 3 equivalents based on the total weight of the composition of the present invention.

본 실시형태에서 사용하는 용매는 에탄올을 사용하면 되지만, 사용하는 원료에 따라 적절히 결정된다. 일반적으로는, 카르복실산, 알코올 (예를 들어, 다가 알코올인 프로필렌글리콜), 에스테르, 케톤류 (예를 들어, 아세톤, 메틸에틸케톤), 에테르류 (예를 들어, 디메틸에테르, 디에틸에테르), 시클로알칸류 (예를 들어, 시클로헥산, 시클로헥산올), 방향족계 (예를 들어, 벤젠, 톨루엔, 자일렌), 그 밖에 테트라하이드로푸란 등, 혹은 이들 2 종 이상의 혼합 용매를 사용할 수 있다.The solvent to be used in the present embodiment may be ethanol, but is appropriately determined depending on the raw material to be used. Generally, a carboxylic acid, an alcohol (e.g., propylene glycol as a polyhydric alcohol), an ester, a ketone (e.g. acetone, methyl ethyl ketone), an ether (e.g., dimethyl ether, diethyl ether) , Aromatic hydrocarbons (e.g., benzene, toluene, xylene), and other tetrahydrofuran, or a mixed solvent of two or more of these solvents can be used .

용매는, PZT 계 졸겔액 100 질량% 에 50 ∼ 70 질량% 함유되도록 첨가할 수 있고, 보다 바람직하게는 60 ∼ 65 질량% 이다.The solvent can be added in an amount of 50 to 70% by mass, more preferably 60 to 65% by mass, based on 100% by mass of the PZT-based sol-gel solution.

상기 카르복실산으로는, 구체적으로는 n-부티르산, α-메틸부티르산, i-발레르산, 2-에틸부티르산, 2,2-디메틸부티르산, 3,3-디메틸부티르산, 2,3-디메틸부티르산, 3-메틸펜탄산, 4-메틸펜탄산, 2-에틸펜탄산, 3-에틸펜탄산, 2,2-디메틸펜탄산, 3,3-디메틸펜탄산, 2,3-디메틸펜탄산, 2-에틸헥산산, 3-에틸헥산산을 사용하는 것이 바람직하다. Specific examples of the carboxylic acid include n-butyric acid, alpha -methylbutyric acid, i-valeric acid, 2-ethylbutyric acid, 2,2-dimethylbutyric acid, 3,3-dimethylbutyric acid, 3-methylpentanoic acid, 2-ethylpentanoic acid, 3-ethylpentanoic acid, 2,2-dimethylpentanoic acid, 3,3-dimethylpentanoic acid, 2,3- Ethylhexanoic acid, and 3-ethylhexanoic acid are preferably used.

또, 상기 에스테르로는, 아세트산에틸, 아세트산프로필, 아세트산 n-부틸, 아세트산 sec-부틸, 아세트산 tert-부틸, 아세트산이소부틸, 아세트산 n-아밀, 아세트산 sec-아밀, 아세트산 tert-아밀, 아세트산이소아밀을 사용하는 것이 바람직하고, 알코올로는, 1-프로판올, 2-프로판올, 1-부탄올, 2-부탄올, 이소-부틸알코올, 1-펜탄올, 2-펜탄올, 2-메틸-2-펜탄올, 2-메톡시에탄올을 사용하는 것이 바람직하다. Examples of the ester include ethyl acetate, propyl acetate, n-butyl acetate, sec-butyl acetate, tert-butyl acetate, isobutyl acetate, n-amyl acetate, sec-amyl acetate, It is preferable to use wheat. Examples of the alcohol include aliphatic alcohols such as 1-propanol, 2-propanol, 1-butanol, 2-butanol, isobutyl alcohol, It is preferable to use 2-methoxyethanol.

또, PZT 졸겔액은 β-디케톤류 및 다가 알코올류를 PZT 계 졸겔액 100 질량% 에 10 ∼ 20 질량% 함유하도록 해도 된다. 이 중, β-디케톤류로는 아세틸아세톤이, 다가 알코올류로는 프로필렌글리콜이 특히 바람직하다. The PZT sol gel liquid may contain β-diketones and polyhydric alcohols in an amount of 10 to 20 mass% in 100 mass% of the PZT sol-gel solution. Of these, acetylacetone is preferable as the? -Diketones, and propylene glycol is particularly preferable as the polyhydric alcohols.

이상과 같이 하여 제조된 PZT 졸겔액은, 스핀 코트법, 딥 코트법, LSMCD (Liquid Source Misted Chemical Deposition) 법 등의 CSD (Chemical Solution Deposition) 법을 이용하여 기판 상에 도포되고, 소정 온도, 시간 동안 잔류 용제나 물 등을 제거하여 겔막이 된 후, 가소, 소성하여 PZT 계 강유전체 박막이 제조된다. The PZT sol-gel solution prepared as described above is applied on a substrate by using a CSD (Chemical Solution Deposition) method such as a spin coating method, a dip coating method, a LSMCD (Liquid Source Misted Chemical Deposition) method, The residual solvent or water is removed to form a gel film, which is then calcined and fired to produce a PZT ferroelectric thin film.

이상의 본 실시형태에 의한 PZT 졸겔액에 의하면, 고분자의 첨가에 의해 점성을 높이고, N-메틸피롤리돈의 첨가에 의해 크랙을 억제할 수 있었기 때문에, 예를 들어 스핀 코트법에 의한 스핀 코트 1 회에 의한 1 층으로 100 ㎚ 이상의 비교적 두꺼운 막을 형성할 수 있음과 함께 가소, 소성 후의 PZT 막이 크랙리스이며 치밀해지고 또한 충분히 높은 강유전 특성을 가져올 수 있게 되어, 생산 효율의 향상을 도모할 수 있다.According to the above-mentioned PZT sol-gel solution of the present embodiment, since the viscosity can be increased by adding the polymer and the crack can be suppressed by adding N-methylpyrrolidone, the spin coat 1 A relatively thick film having a thickness of 100 nm or more can be formed in one layer by sintering, and the PZT film after the calcination and sintering is cracked and dense, and sufficiently high ferroelectric characteristics can be obtained, so that the production efficiency can be improved.

실시예Example

다음으로 본 발명의 실시예를 비교예와 함께 상세하게 설명한다.Next, examples of the present invention will be described in detail with reference to comparative examples.

비교 시험 및 평가는 이하에 따랐다. Comparative tests and evaluations were as follows.

실시예 1 ∼ 6 및 비교예 1, 2 에서 얻어진 PZT 막에 대하여, 이하의 수법에 의해, 당해 박막의 소성 후의 층두께 및 굴절률을 구하였다. 그 결과를 표 1 에 나타낸다. 또, 실시예 1 및 4 그리고 비교예 2 에서 얻어진 PZT 막의 단면 관찰 및 표면 관찰을 실시하였다.With respect to the PZT films obtained in Examples 1 to 6 and Comparative Examples 1 and 2, the layer thickness and the refractive index after sintering of the thin film were determined by the following procedure. The results are shown in Table 1. In addition, the cross section and the surface of the PZT film obtained in Examples 1 and 4 and Comparative Example 2 were observed.

(1) 층두께 측정 : 얻어진 PZT 막의 층두께를 분광 엘립소미터 (J. A. Woollam 사 제조 ; M-2000) 에 의해 측정하여, 측정 결과를 표 1 에 정리하였다.(1) Layer thickness measurement: The layer thickness of the obtained PZT film was measured by a spectroscopic ellipsometer (M-2000, manufactured by J. A. Woollam), and the measurement results are summarized in Table 1.

(2) 굴절률 측정 : PZT 막의 굴절률은 상기 분광 엘립소미터에 의해 측정하여, 측정 결과를 표 1 에 정리하였다. (2) Measurement of refractive index: The refractive index of the PZT film was measured by the spectroscopic ellipsometer, and the measurement results are summarized in Table 1.

(3) 단면 관찰 : 얻어진 PZT 막의 단면을 SEM (히타치 제작소 제조 ; S-4300SE) 에 의해 촬영된 사진 (배율 100000 배) 에 의해 관찰하여, 크랙 발생의 유무를 확인하였다.(3) Cross-section observation: The cross-section of the obtained PZT film was observed with a photograph (magnification: 100000) photographed by SEM (Hitachi, S-4300SE)

(4) 표면 관찰 : 얻어진 PZT 막의 표면을 SEM (히타치 제작소 제조 ; S-4300SE) 에 의해 촬영된 사진 (배율 25000 배) 에 의해 관찰하여, 크랙 발생의 유무를 확인하였다.(4) Observation of the surface: The surface of the obtained PZT film was observed with a photograph (magnification: 25000 times) taken by SEM (S-4300SE, manufactured by Hitachi, Ltd.)

<실시예 1>≪ Example 1 >

산화물로서 PZT 를 25 wt% 함유하는 에탄올 용매의 PZT 졸겔액 50 g 에 폴리비닐피롤리돈 (이하 PVP 라고 한다) (k = 30) 을, PZT : PVP = 1 : 0.2 가 되도록 0.73 g 첨가하고, 2 시간 교반하여, 냉장고 (5 ℃) 에서 24 시간 안정화시켰다. 이와 같이 하여 얻어진 용액에 N-메틸피롤리돈을 당해 용액의 6.5 질량% 가 되도록 첨가하고, 2 시간 교반하였다. 얻어진 액을 Si 기판 상에 SiO2 막, TiO2 막 및 Pt 막이 이 순서로 형성된 기판 (이하 「Pt/TiOX/SiO2/Si 기판」이라고 한다) 의 Pt 막 상에 적하하고, 2000 rpm 으로 60 초간 스핀 코팅을 실시하였다. 이 기판을 150 ℃ 의 핫 플레이트 상에서 3 분간 유지하여, 막 중의 잔류 용제나 물 등을 제거하였다. 얻어진 기판을 RTA (Rapid Thermal Annealing, 이하 동일) 처리로 가소하였다. 가소는 2.5 ℃/초로 275 ℃ 까지 승온시킨 후, 3 분간 유지하고, 10 ℃/초로 460 ℃ 까지 승온시켜 8 분간 유지하였다. 0.73 g of polyvinylpyrrolidone (hereinafter referred to as PVP) (k = 30) as PZT: PVP = 1: 0.2 was added to 50 g of a PZT sol-gel solution of an ethanol solvent containing 25 wt% of PZT as an oxide, The mixture was stirred for 2 hours and stabilized in a refrigerator (5 ° C) for 24 hours. To the thus obtained solution, N-methylpyrrolidone was added in an amount of 6.5% by mass of the solution, and the mixture was stirred for 2 hours. The obtained solution was dropped onto a Pt film of a substrate (hereinafter referred to as " Pt / TiO x / SiO 2 / Si substrate ") having an SiO 2 film, a TiO 2 film and a Pt film formed in this order on a Si substrate, Spin coating was performed for 60 seconds. The substrate was held on a hot plate at 150 캜 for 3 minutes to remove residual solvent and water in the film. The obtained substrate was subjected to RTA (Rapid Thermal Annealing) process. The temperature was raised to 275 ° C at 2.5 ° C / sec, held for 3 minutes, raised to 460 ° C at 10 ° C / sec and held for 8 minutes.

얻어진 막의 632.8 ㎚ 에 있어서의 굴절률을 측정하면 2.40 이었다. 이 기판을 RTA 처리로 승온 속도 10 ℃/초, 700 ℃ 에서 1 분간 유지함으로써 소성하였다. 얻어진 PZT 막의 굴절률을 측정하면 2.52 였다. 얻어진 PZT 막에 스퍼터링에 의해 Pt 상부 전극 (200 ㎚) 을 형성하고, 전기 특성을 측정한 결과, 0 V 에 있어서의 유전율이 1500 을 나타내어 높은 유전율을 갖는 것을 확인할 수 있었다. 또, SEM 에 의한 관찰로부터 막두께가 250 ㎚ 인 치밀한 PZT 막으로, 크랙은 발생하지 않았다. The refractive index at 632.8 nm of the obtained film was measured to be 2.40. This substrate was baked by RTA treatment at a heating rate of 10 占 폚 / sec and at 700 占 폚 for 1 minute. The refractive index of the obtained PZT film was 2.52. A Pt upper electrode (200 nm) was formed on the obtained PZT film by sputtering, and the electric characteristics were measured. As a result, it was confirmed that the dielectric constant at 0 V was 1500, indicating a high dielectric constant. From the observation by SEM, a dense PZT film with a film thickness of 250 nm was not cracked.

<실시예 2>≪ Example 2 >

산화물로서 PZT 를 25 wt% 함유하는 에탄올 용매의 PZT 졸겔액 50 g 에 PVP (k = 30) 를, PZT : PVP = 1 : 0.25 가 되도록 0.91 g 첨가하고, 2 시간 교반하여, 냉장고 (5 ℃) 에서 24 시간 안정화시켰다. 이와 같이 하여 얻어진 용액에 N-메틸피롤리돈을 당해 용액의 3.0 질량% 가 되도록 첨가하고, 2 시간 교반하였다. 얻어진 액을 Pt 막 상에 적하하고, 2000 rpm 으로 60 초간 스핀 코팅을 실시하였다. 이 기판을 150 ℃ 의 핫 플레이트 상에서 3 분간 유지하여, 막 중의 잔류 용제나 물 등을 제거하였다. 얻어진 기판을 RTA 처리로 가소하였다. 가소는 2.5 ℃/초로 275 ℃ 까지 승온시킨 후, 3 분간 유지하고, 10 ℃/초로 460 ℃ 까지 승온시켜 8 분간 유지하였다. PVP (k = 30) and 0.91 g of PZT: PVP = 1: 0.25 were added to 50 g of a PZT sol-gel solution of an ethanol solvent containing 25 wt% of PZT as an oxide and stirred for 2 hours, Lt; / RTI > for 24 hours. N-methylpyrrolidone was added to the solution so obtained so as to be 3.0% by mass of the solution, and the mixture was stirred for 2 hours. The obtained solution was dropped onto the Pt film, and spin-coated at 2000 rpm for 60 seconds. The substrate was held on a hot plate at 150 캜 for 3 minutes to remove residual solvent and water in the film. The obtained substrate was subjected to RTA treatment. The temperature was raised to 275 ° C at 2.5 ° C / sec, held for 3 minutes, raised to 460 ° C at 10 ° C / sec and held for 8 minutes.

얻어진 PZT 막의 632.8 ㎚ 에 있어서의 굴절률을 측정하면 2.40 이었다. 이 기판을 RTA 처리로 승온 속도 10 ℃/초, 700 ℃ 에서 1 분간 유지함으로써 소성하였다. 얻어진 PZT 막의 굴절률을 측정하면 2.50 이었다. 얻어진 PZT 막에 스퍼터링에 의해 Pt 상부 전극 (200 ㎚) 을 형성하고, 전기 특성을 측정한 결과, 0 V 에 있어서의 유전율이 1430 을 나타내어 높은 유전율을 갖는 것을 확인할 수 있었다. 또, SEM 에 의한 관찰로부터 막두께가 280 ㎚ 인 치밀한 주상 (柱狀) 조직을 갖는 PZT 막으로, 크랙은 발생하지 않았다.The refractive index at 632.8 nm of the obtained PZT film was measured to be 2.40. This substrate was baked by RTA treatment at a heating rate of 10 占 폚 / sec and at 700 占 폚 for 1 minute. The refractive index of the obtained PZT film was measured to be 2.50. A Pt upper electrode (200 nm) was formed on the obtained PZT film by sputtering, and the electrical characteristics were measured. As a result, it was confirmed that the dielectric constant at 0 V was 1430 and a high dielectric constant was obtained. From the observation by SEM, cracks did not occur in the PZT film having a dense columnar structure with a film thickness of 280 nm.

<실시예 3>≪ Example 3 >

산화물로서 PZT 를 25 wt% 함유하는 에탄올 용매의 PZT 졸겔액 50 g 에 PVP (k = 30) 를, PZT : PVP = 1 : 0.45 가 되도록 1.64 g 첨가하고, 2 시간 교반하여, 냉장고 (5 ℃) 에서 24 시간 안정화시켰다. 이와 같이 하여 얻어진 용액에 N-메틸피롤리돈을 당해 용액의 3.0 질량% 가 되도록 첨가하고, 2 시간 교반하였다. 얻어진 액을 Pt 막 상에 적하하고, 2000 rpm 으로 60 초간 스핀 코팅을 실시하였다. 이 기판을 150 ℃ 의 핫 플레이트 상에서 3 분간 유지하여, 막 중의 잔류 용제나 물 등을 제거하였다. 얻어진 기판을 RTA 처리로 가소하였다. 가소는 2.5 ℃/초로 275 ℃ 까지 승온시킨 후, 3 분간 유지하고, 10 ℃/초로 460 ℃ 까지 승온시켜 8 분간 유지하였다. 1.64 g of PVP (k = 30) was added to 50 g of a PZT sol-gel solution of an ethanol solvent containing 25 wt% of PZT as an oxide and PZT: PVP = 1: 0.45. The mixture was stirred for 2 hours, Lt; / RTI > for 24 hours. N-methylpyrrolidone was added to the solution so obtained so as to be 3.0% by mass of the solution, and the mixture was stirred for 2 hours. The obtained solution was dropped onto the Pt film, and spin-coated at 2000 rpm for 60 seconds. The substrate was held on a hot plate at 150 캜 for 3 minutes to remove residual solvent and water in the film. The obtained substrate was subjected to RTA treatment. The temperature was raised to 275 ° C at 2.5 ° C / sec, held for 3 minutes, raised to 460 ° C at 10 ° C / sec and held for 8 minutes.

얻어진 PZT 막의 632.8 ㎚ 에 있어서의 굴절률을 측정하면 2.40 였다. 이 기판을 RTA 처리로 승온 속도 10 ℃/초, 700 ℃ 에서 1 분간 유지함으로써 소성하였다. 얻어진 PZT 막의 굴절률을 측정하면 2.50 이었다. 얻어진 PZT 막에 스퍼터링에 의해 Pt 상부 전극 (200 ㎚) 을 형성하고, 전기 특성을 측정한 결과, 0 V 에 있어서의 유전율이 1430 을 나타내어 충분히 높은 유전율을 갖는 것을 확인할 수 있었다. 또, SEM 에 의한 관찰로부터 막두께가 350 ㎚ 인 치밀한 PZT 막으로, 크랙은 발생하지 않았다.The refractive index of the obtained PZT film at 632.8 nm was 2.40. This substrate was baked by RTA treatment at a heating rate of 10 占 폚 / sec and at 700 占 폚 for 1 minute. The refractive index of the obtained PZT film was measured to be 2.50. A Pt upper electrode (200 nm) was formed on the obtained PZT film by sputtering, and the electric characteristics were measured. As a result, it was confirmed that the dielectric constant at 0 V was 1430 and the dielectric constant was sufficiently high. Further, from the observation by SEM, a dense PZT film with a film thickness of 350 nm was not cracked.

<실시예 4><Example 4>

산화물로서 PZT 를 25 wt% 함유하는 에탄올 용매의 PZT 졸겔액 50 g 에 PVP (k = 30) 를, PZT : PVP = 1 : 0.45 가 되도록 1.64 g 첨가하고, 2 시간 교반하여, 냉장고 (5 ℃) 에서 24 시간 안정화시켰다. 이와 같이 하여 얻어진 용액에 N-메틸피롤리돈을 당해 용액의 6.5 질량% 가 되도록 첨가하고, 2 시간 교반하였다. 얻어진 액을 Pt 막 상에 적하하고, 2000 rpm 으로 60 초간 스핀 코팅을 실시하였다. 이 기판을 150 ℃ 의 핫 플레이트 상에서 3 분간 유지하여, 막 중의 잔류 용제나 물 등을 제거하였다. 얻어진 기판을 RTA 처리로 가소하였다. 가소는 2.5 ℃/초로 275 ℃ 까지 승온시킨 후, 3 분간 유지하고, 10 ℃/초로 460 ℃ 까지 승온시켜 8 분간 유지하였다. 1.64 g of PVP (k = 30) was added to 50 g of a PZT sol-gel solution of an ethanol solvent containing 25 wt% of PZT as an oxide and PZT: PVP = 1: 0.45. The mixture was stirred for 2 hours, Lt; / RTI &gt; for 24 hours. To the thus obtained solution, N-methylpyrrolidone was added in an amount of 6.5% by mass of the solution, and the mixture was stirred for 2 hours. The obtained solution was dropped onto the Pt film, and spin-coated at 2000 rpm for 60 seconds. The substrate was held on a hot plate at 150 캜 for 3 minutes to remove residual solvent and water in the film. The obtained substrate was subjected to RTA treatment. The temperature was raised to 275 ° C at 2.5 ° C / sec, held for 3 minutes, raised to 460 ° C at 10 ° C / sec and held for 8 minutes.

얻어진 PZT 막의 632.8 ㎚ 에 있어서의 굴절률을 측정하면 2.41 이었다. 이 기판을 RTA 처리로 승온 속도 10 ℃/초, 700 ℃ 에서 1 분간 유지함으로써 소성하였다. 얻어진 PZT 막의 굴절률을 측정하면 2.51 였다. 얻어진 PZT 막에 스퍼터링에 의해 Pt 상부 전극 (200 ㎚) 을 형성하고, 전기 특성을 측정한 결과, 0 V 에 있어서의 유전율이 1450 을 나타내어 충분히 높은 유전율을 갖는 것을 확인할 수 있었다. 또, SEM 에 의한 관찰로부터 막두께가 320 ㎚ 인 상당히 치밀화된 PZT 막으로, 크랙은 발생하지 않았다.The refractive index of the obtained PZT film at 632.8 nm was 2.41. This substrate was baked by RTA treatment at a heating rate of 10 占 폚 / sec and at 700 占 폚 for 1 minute. The refractive index of the obtained PZT film was 2.51. A Pt upper electrode (200 nm) was formed on the obtained PZT film by sputtering, and the electric characteristics were measured. As a result, it was confirmed that the dielectric constant at 0 V was 1450 and the dielectric constant was sufficiently high. Also, from the observation by SEM, a highly dense PZT film having a film thickness of 320 nm was not cracked.

<실시예 5>&Lt; Example 5 &gt;

산화물로서 PZT 를 25 wt% 함유하는 에탄올 용매의 PZT 졸겔액 50 g 에 PVP (k = 30) 를, PZT : PVP = 1 : 0.45 가 되도록 1.64 g 첨가하고, 2 시간 교반하여, 냉장고 (5 ℃) 에서 24 시간 안정화시켰다. 이와 같이 하여 얻어진 용액에 N-메틸피롤리돈을 당해 용액의 13.0 질량% 가 되도록 첨가하고, 2 시간 교반하였다. 얻어진 액을 Pt 막 상 적하하고, 2000 rpm 으로 60 초간 스핀 코팅을 실시하였다. 이 기판을 150 ℃ 의 핫 플레이트 상에서 3 분간 유지하여, 막 중의 잔류 용제나 물 등을 제거하였다. 얻어진 기판을 RTA 처리로 가소하였다. 가소는 2.5 ℃/초로 275 ℃ 까지 승온시킨 후, 3 분간 유지하고, 10 ℃/초로 460 ℃ 까지 승온시켜 8 분간 유지하였다. 1.64 g of PVP (k = 30) was added to 50 g of a PZT sol-gel solution of an ethanol solvent containing 25 wt% of PZT as an oxide and PZT: PVP = 1: 0.45. The mixture was stirred for 2 hours, Lt; / RTI &gt; for 24 hours. To the thus obtained solution, N-methylpyrrolidone was added in an amount of 13.0% by mass of the solution, followed by stirring for 2 hours. The obtained solution was dropped onto a Pt film, and spin-coated at 2000 rpm for 60 seconds. The substrate was held on a hot plate at 150 캜 for 3 minutes to remove residual solvent and water in the film. The obtained substrate was subjected to RTA treatment. The temperature was raised to 275 ° C at 2.5 ° C / sec, held for 3 minutes, raised to 460 ° C at 10 ° C / sec and held for 8 minutes.

얻어진 PZT 막의 632.8 ㎚ 에 있어서의 굴절률을 측정하면 2.42 였다. 이 기판을 RTA 처리로 승온 속도 10 ℃/초, 700 ℃ 에서 1 분간 유지함으로써 소성하였다. 얻어진 PZT 막의 굴절률을 측정하면 2.50 이었다. 얻어진 PZT 막에 스퍼터링에 의해 Pt 상부 전극 (200 ㎚) 을 형성하고, 전기 특성을 측정한 결과, 0 V 에 있어서의 유전율이 1500 을 나타내어 충분히 높은 유전율을 갖는 것을 확인할 수 있었다. 또, SEM 에 의한 관찰로부터 막두께가 300 ㎚ 인 치밀한 PZT 막으로, 크랙은 발생하지 않았다.The refractive index of the obtained PZT film at 632.8 nm was 2.42. This substrate was baked by RTA treatment at a heating rate of 10 占 폚 / sec and at 700 占 폚 for 1 minute. The refractive index of the obtained PZT film was measured to be 2.50. A Pt upper electrode (200 nm) was formed on the obtained PZT film by sputtering, and the electric characteristics were measured. As a result, it was confirmed that the dielectric constant at 0 V was 1500 and the dielectric constant was sufficiently high. From the observation by SEM, a dense PZT film with a film thickness of 300 nm did not cause cracking.

<실시예 6>&Lt; Example 6 &gt;

산화물로서 PZT 를 25 wt% 함유하는 에탄올 용매의 PZT 졸겔액 50 g 에 PVP (k = 30) 를, PZT : PVP = 1 : 0.5 가 되도록 1.82 g 첨가하고, 2 시간 교반하여, 냉장고 (5 ℃) 에서 24 시간 안정화시켰다. 이와 같이 하여 얻어진 용액에 N-메틸피롤리돈을 당해 용액의 6.5 질량% 가 되도록 첨가하고, 2 시간 교반하였다. 얻어진 액을 Pt 막 상에 적하하고, 2000 rpm 으로 60 초간 스핀 코팅을 실시하였다. 이 기판을 150 ℃ 의 핫 플레이트 상에서 3 분간 유지하여, 막 중의 잔류 용제나 물 등을 제거하였다. 얻어진 기판을 RTA 처리로 가소하였다. 가소는 2.5 ℃/초로 275 ℃ 까지 승온시킨 후, 3 분간 유지하고, 10 ℃/초로 460 ℃ 까지 승온시켜 8 분간 유지하였다. 1.82 g of PVP (k = 30) and PZT: PVP = 1: 0.5 were added to 50 g of a PZT sol-gel solution of an ethanol solvent containing 25 wt% of PZT as an oxide and stirred for 2 hours, Lt; / RTI &gt; for 24 hours. To the thus obtained solution, N-methylpyrrolidone was added in an amount of 6.5% by mass of the solution, and the mixture was stirred for 2 hours. The obtained solution was dropped onto the Pt film, and spin-coated at 2000 rpm for 60 seconds. The substrate was held on a hot plate at 150 캜 for 3 minutes to remove residual solvent and water in the film. The obtained substrate was subjected to RTA treatment. The temperature was raised to 275 ° C at 2.5 ° C / sec, held for 3 minutes, raised to 460 ° C at 10 ° C / sec and held for 8 minutes.

얻어진 PZT 막의 632.8 ㎚ 에 있어서의 굴절률을 측정하면 2.38 이었다. 이 기판을 RTA 처리로 승온 속도 10 ℃/초, 700 ℃ 에서 1 분간 유지함으로써 소성하였다. 얻어진 PZT 막의 굴절률을 측정하면 2.47 이었다. 얻어진 PZT 막에 스퍼터링에 의해 Pt 상부 전극 (200 ㎚) 을 형성하고, 전기 특성을 측정한 결과, 0 V 에 있어서의 유전율이 1400 을 나타내어 높은 유전율을 갖는 것을 확인할 수 있었다. 또, SEM 에 의한 관찰로부터 막두께가 360 ㎚ 인 치밀한 PZT 막으로, 크랙은 발생하지 않았다.The refractive index of the obtained PZT film at 632.8 nm was 2.38. This substrate was baked by RTA treatment at a heating rate of 10 占 폚 / sec and at 700 占 폚 for 1 minute. The refractive index of the obtained PZT film was measured to be 2.47. A Pt upper electrode (200 nm) was formed on the obtained PZT film by sputtering, and the electrical characteristics were measured. As a result, it was confirmed that the dielectric constant at 0 V was 1400 and a high dielectric constant was obtained. From the observation by SEM, a dense PZT film having a thickness of 360 nm did not cause cracking.

<비교예 1>&Lt; Comparative Example 1 &

산화물로서 PZT 를 25 wt% 함유하는 에탄올 용매의 PZT 졸겔액 50 g 에 PVP (k = 30) 를, PZT : PVP = 1 : 0.05 가 되도록 0.18 g 첨가하고, 2 시간 교반하여, 냉장고 (5 ℃) 에서 24 시간 안정화시켰다. 이와 같이 하여 얻어진 용액에 N-메틸피롤리돈을 당해 용액의 6.5 질량% 가 되도록 첨가하고, 2 시간 교반하였다. 얻어진 액을 Pt 막 상에 적하하고, 2000 rpm 으로 60 초간 스핀 코팅을 실시하였다. 이 기판을 150 ℃ 의 핫 플레이트 상에서 3 분간 유지하여, 막 중의 잔류 용제나 물 등을 제거하였다. 얻어진 기판을 RTA 처리로 가소하였다. 가소는 2.5 ℃/초로 275 ℃ 까지 승온시킨 후, 3 분간 유지하고, 10 ℃/초로 460 ℃ 까지 승온시켜 8 분간 유지하였다. PVP (k = 30) and 0.18 g of PZT: PVP = 1: 0.05 were added to 50 g of a PZT sol-gel solution of an ethanol solvent containing 25 wt% of PZT as an oxide and stirred for 2 hours, Lt; / RTI &gt; for 24 hours. To the thus obtained solution, N-methylpyrrolidone was added in an amount of 6.5% by mass of the solution, and the mixture was stirred for 2 hours. The obtained solution was dropped onto the Pt film, and spin-coated at 2000 rpm for 60 seconds. The substrate was held on a hot plate at 150 캜 for 3 minutes to remove residual solvent and water in the film. The obtained substrate was subjected to RTA treatment. The temperature was raised to 275 ° C at 2.5 ° C / sec, held for 3 minutes, raised to 460 ° C at 10 ° C / sec and held for 8 minutes.

얻어진 PZT 막의 632.8 ㎚ 에 있어서의 굴절률을 측정하면 2.40 이었다. 이 기판을 RTA 처리로 승온 속도 10 ℃/초, 700 ℃ 에서 1 분간 유지함으로써 소성하였다. 얻어진 PZT 막의 굴절률을 측정하면 2.51 이었다. 얻어진 PZT 막에 스퍼터링에 의해 Pt 상부 전극 (200 ㎚) 을 형성하고, 전기 특성을 측정한 결과, 0 V 에 있어서의 유전율은 1200 을 나타내었다. 또, SEM 에 의한 관찰로부터 막두께가 190 ㎚ 이고, 막 중에 크랙이 발생하였다.The refractive index at 632.8 nm of the obtained PZT film was measured to be 2.40. This substrate was baked by RTA treatment at a heating rate of 10 占 폚 / sec and at 700 占 폚 for 1 minute. The refractive index of the obtained PZT film was measured to be 2.51. A Pt upper electrode (200 nm) was formed on the obtained PZT film by sputtering, and the electric characteristics were measured. As a result, the dielectric constant at 0 V was 1200. From the observation by SEM, the film thickness was 190 nm, and cracks occurred in the film.

<비교예 2>&Lt; Comparative Example 2 &

산화물로서 PZT 를 25 wt% 함유하는 에탄올 용매의 PZT 졸겔액 50 g 에 PVP (k = 30) 를, PZT : PVP = 1 : 0.75 가 되도록 2.73 g 첨가하고, 2 시간 교반하여, 냉장고 (5 ℃) 에서 24 시간 안정화시켰다. 이와 같이 하여 얻어진 용액에 N-메틸피롤리돈을 당해 용액의 6.5 질량% 가 되도록 첨가하고, 2 시간 교반하였다. 얻어진 액을 Pt 막 상에 적하하고, 2000 rpm 으로 60 초간 스핀 코팅을 실시한 결과, 액의 점도가 지나치게 높아 균일하게 도포하기가 곤란하였다. 이 기판을 150 ℃ 의 핫 플레이트 상에서 3 분간 유지하여, 막 중의 잔류 용제나 물 등을 제거하였다. 얻어진 기판을 RTA 처리로 가소하였다. 가소는 2.5 ℃/초로 275 ℃ 까지 승온시킨 후, 3 분간 유지하고, 10 ℃/초로 460 ℃ 까지 승온시켜 8 분간 유지하였다. PVP (k = 30) was added to 50 g of a PZT sol-gel solution of an ethanol solvent containing 25 wt% of PZT as an oxide and 2.73 g of PZT: PVP = 1: 0.75 was added and stirred for 2 hours, Lt; / RTI &gt; for 24 hours. To the thus obtained solution, N-methylpyrrolidone was added in an amount of 6.5% by mass of the solution, and the mixture was stirred for 2 hours. The obtained solution was dropped on the Pt film and spin-coated at 2000 rpm for 60 seconds. As a result, the viscosity of the solution was too high to uniformly coat. The substrate was held on a hot plate at 150 캜 for 3 minutes to remove residual solvent and water in the film. The obtained substrate was subjected to RTA treatment. The temperature was raised to 275 ° C at 2.5 ° C / sec, held for 3 minutes, raised to 460 ° C at 10 ° C / sec and held for 8 minutes.

얻어진 PZT 막의 632.8 ㎚ 에 있어서의 굴절률을 측정하면 2.05 였다. 이 기판을 RTA 처리로 승온 속도 10 ℃/초, 700 ℃ 에서 1 분간 유지함으로써 소성하였다. 얻어진 PZT 막의 굴절률을 측정하면 2.21 이었다. 얻어진 PZT 막에 스퍼터링에 의해 Pt 상부 전극 (200 ㎚) 을 형성하고, 전기 특성을 측정한 결과, 0 V 에 있어서의 유전율이 850 을 나타내었다. 또, SEM 에 의한 관찰로부터 막두께가 470 ㎚ 이고, 막 중에 크랙이 발생하였다.The refractive index of the obtained PZT film at 632.8 nm was 2.05. This substrate was baked by RTA treatment at a heating rate of 10 占 폚 / sec and at 700 占 폚 for 1 minute. The refractive index of the obtained PZT film was measured to be 2.21. A Pt upper electrode (200 nm) was formed on the obtained PZT film by sputtering and the electric characteristics were measured. As a result, the dielectric constant at 0 V was 850. From the observation by SEM, the film thickness was 470 nm and cracks were generated in the film.

<종합 평가><Overall evaluation>

이상으로부터 본 발명에 관련된 실시예 1 ∼ 6 의 PZT 막은 모두 비교예 1 및 2 에 관련된 PZT 막보다 굴절률이 우수하였다. 또, 본 발명에 관련된 실시예의 PZT 막은 치밀한 막으로, 크랙은 발생하지 않았다. 이에 반하여 비교예의 PZT 막은 치밀함이 부족한 막이거나 크랙이 발생하였다. 이상으로부터 본 발명의 강유전체 박막 형성용 졸겔액을 PZT 막의 원료에 사용함으로써 크랙리스이며 치밀한 막을 갖고 또한 실용상 충분한 특성을 구비한 PZT 막을 제조할 수 있음을 알 수 있었다.From the above, the PZT films of Examples 1 to 6 relating to the present invention all had better refractive index than the PZT films of Comparative Examples 1 and 2. In addition, the PZT film of the embodiment related to the present invention is a dense film, and cracks did not occur. On the other hand, the PZT film of the comparative example was a film lacking in denseness or cracks. From the above, it was found that the use of the sol-gel solution for forming a ferroelectric thin film of the present invention for the raw material of the PZT film makes it possible to produce a PZT film having a cracked and dense film and having sufficient practical characteristics.

Figure pat00001
Figure pat00001

이상, 본 발명의 바람직한 실시예를 설명하였으나, 본 발명은 이들 실시예에 한정되지 않는다. 본 발명의 취지를 일탈하지 않는 범위에서, 구성의 부가, 생략, 치환, 및 그 밖의 변경이 가능하다. 본 발명은 전술한 설명에 의해 한정되지 않으며, 첨부하는 클레임의 범위에 의해서만 한정된다.Although the preferred embodiments of the present invention have been described above, the present invention is not limited to these embodiments. Additions, omissions, substitutions, and other modifications of the configuration are possible without departing from the spirit of the present invention. The invention is not limited by the foregoing description, but is only limited by the scope of the appended claims.

본 발명의 강유전체 박막 형성용 졸겔액은, 비교적 두꺼운 강유전체 박막이 요구되는 박막 압전 디바이스나 박막 캐패시터 등의 강유전체를 포함하는 전자 디바이스, 전자 부품을 제조하기 위한 전구체 용액에 이용할 수 있다.The sol-gel solution for forming a ferroelectric thin film of the present invention can be used for a precursor solution for producing an electronic device or an electronic device including a ferroelectric such as a thin film piezoelectric device or a thin film capacitor in which a relatively thick ferroelectric thin film is required.

Claims (3)

PZT 계 화합물과,
폴리비닐피롤리돈을 함유하는 점도 조정용 고분자 화합물과,
N-메틸피롤리돈을 함유하는 유기 도펀트를 함유하고,
상기 PZT 계 화합물이 산화물 환산으로 17 질량% 이상 함유되고,
상기 PZT 계 화합물에 대한 상기 폴리비닐피롤리돈의 몰비가 모노머 환산으로 PZT 계 화합물 : 폴리비닐피롤리돈 = 1 : 0.1 ∼ 0.5 이며,
상기 N-메틸피롤리돈이 졸겔액의 3 질량% ∼ 13 질량% 함유되는 것을 특징으로 하는 강유전체 박막 형성용 졸겔액.
PZT compound,
A viscosity-adjusting polymer compound containing polyvinylpyrrolidone,
An organic dopant containing N-methyl pyrrolidone,
Wherein the PZT-based compound is contained in an amount of at least 17 mass%
Wherein the molar ratio of the polyvinylpyrrolidone to the PZT-based compound is PZT compound: polyvinylpyrrolidone = 1: 0.1 to 0.5 in terms of a monomer,
Wherein the N-methylpyrrolidone is contained in an amount of 3 mass% to 13 mass% of the sol-gel solution.
제 1 항에 있어서,
상기 폴리비닐피롤리돈의 k 값이 15 ∼ 90 의 범위 내에 있는, 강유전체 박막 형성용 졸겔액.
The method according to claim 1,
Wherein the k value of the polyvinylpyrrolidone is in the range of 15 to 90. The ferroelectric thin film forming sol-
제 1 항 또는 제 2 항에 기재된 강유전체 박막 형성용 졸겔액을 이용하여 강유전체 박막을 형성하는 방법.A method for forming a ferroelectric thin film using the sol-gel solution for forming a ferroelectric thin film according to any one of claims 1 to 3.
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