KR20140100281A - Polyimide silicone resin - Google Patents
Polyimide silicone resin Download PDFInfo
- Publication number
- KR20140100281A KR20140100281A KR1020130013402A KR20130013402A KR20140100281A KR 20140100281 A KR20140100281 A KR 20140100281A KR 1020130013402 A KR1020130013402 A KR 1020130013402A KR 20130013402 A KR20130013402 A KR 20130013402A KR 20140100281 A KR20140100281 A KR 20140100281A
- Authority
- KR
- South Korea
- Prior art keywords
- formula
- chemical formula
- silicone resin
- polyimide silicone
- polyimide
- Prior art date
Links
- NYRFBMFAUFUULG-UHFFFAOYSA-N CC(C)(c(cc1)ccc1Oc1cccc(N)c1)c(cc1)ccc1Oc1cc(N)ccc1 Chemical compound CC(C)(c(cc1)ccc1Oc1cccc(N)c1)c(cc1)ccc1Oc1cc(N)ccc1 NYRFBMFAUFUULG-UHFFFAOYSA-N 0.000 description 1
- VCZRXHGIYNAAKM-UHFFFAOYSA-N CC[Si](CC)(C1C=CC(N)=CC1)C(C=C1)=CCC1N Chemical compound CC[Si](CC)(C1C=CC(N)=CC1)C(C=C1)=CCC1N VCZRXHGIYNAAKM-UHFFFAOYSA-N 0.000 description 1
- RIRFLPQRFXHORZ-UHFFFAOYSA-N C[SiH](C1C=CC(N)=CC1)C(C=C1)=CCC1N Chemical compound C[SiH](C1C=CC(N)=CC1)C(C=C1)=CCC1N RIRFLPQRFXHORZ-UHFFFAOYSA-N 0.000 description 1
- ZLSMCQSGRWNEGX-UHFFFAOYSA-N Nc(cc1)ccc1C(c(cc1)ccc1N)=O Chemical compound Nc(cc1)ccc1C(c(cc1)ccc1N)=O ZLSMCQSGRWNEGX-UHFFFAOYSA-N 0.000 description 1
- MJDDNMCVPWQKBH-UHFFFAOYSA-N Nc1cc(Oc(cc2)ccc2SC2C=CC(Oc3cccc(N)c3)=CC2)ccc1 Chemical compound Nc1cc(Oc(cc2)ccc2SC2C=CC(Oc3cccc(N)c3)=CC2)ccc1 MJDDNMCVPWQKBH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/42—Block-or graft-polymers containing polysiloxane sequences
- C08G77/452—Block-or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences
- C08G77/455—Block-or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences containing polyamide, polyesteramide or polyimide sequences
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1003—Preparatory processes
- C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
- C08G73/106—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing silicon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/10—Block- or graft-copolymers containing polysiloxane sequences
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2201/00—Properties
- C08L2201/02—Flame or fire retardant/resistant
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2201/00—Properties
- C08L2201/10—Transparent films; Clear coatings; Transparent materials
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
Description
본 발명은 내열성 및 가시광 영역에서 투과율이 우수한 폴리이미드 실리콘 수지에 관한 것이다.
The present invention relates to a polyimide silicone resin having heat resistance and excellent transmittance in the visible light range.
폴리이미드 수지는 내열성 및 전기 절연성이 우수하여 전자 부품 등의 수지 바니시로 널리 사용되고 있다. Polyimide resins are widely used as resin varnishes for electronic parts and the like because of their excellent heat resistance and electrical insulation properties.
이러한 폴리이미드 수지는 고비점의 유기용매에 용해되어 폴리이미드의 전구체인 폴리아믹산의 상태로 기재에 도포한 후 300 ℃ 이상의 온도에서 장시간 가열 처리하여 탈수, 이미드화시켜 제조된다.Such a polyimide resin is dissolved in an organic solvent having a high boiling point and is applied to a substrate in the form of polyamic acid, which is a precursor of polyimide, and then heat-treated at a temperature of 300 ° C or higher for a long time to dehydrate and imidize the polyimide resin.
그러나, 상기 폴리아믹산의 탈수, 이미드화 반응은 고온에서 장 시간 동안 가열되므로 열화를 일으키게 된다. 또한, 가열이 부족하면 제조된 폴리이미드 수지의 구조 중에 폴리아믹산이 잔존하여 내습성, 내부식성 등의 저하의 원인이 된다.However, since the dehydration and imidization reaction of the polyamic acid is heated for a long time at a high temperature, it causes deterioration. In addition, if the heating is insufficient, the polyamic acid remains in the structure of the produced polyimide resin, which causes deterioration of moisture resistance and corrosion resistance.
이에, 유기용매에 용해되는 폴리이미드 수지 용액을 기재에 도포한 후, 가열하여 용매를 휘발시켜 폴리이미드 수지 피막을 제조하는 방법이 제시되었다[일본특허공개 평2-36232]. 그러나, 상기 방법으로 제조된 폴리이미드 수지 피막은 내용제성이 낮은 단점이 있었다.Thus, a method of applying a polyimide resin solution dissolved in an organic solvent to a base material and then heating the mixture to volatilize the solvent to produce a polyimide resin film has been proposed (JP-A-2-36232). However, the polyimide resin film produced by the above method has a disadvantage of low solvent resistance.
또한, 저온에서 단시간 동안 열처리하여 밀착성, 내용제성 등이 우수한 폴리이미드 수지 피막을 제조하는 열경화성 폴리이미드 수지 조성물[일본특허공개 평10-195278]이 제시되었다. 그러나, 상기 열경화성 수지는 충분한 내열성을 나타내지 못하거나 투명성이 낮아 그 사용 분야가 한정되는 단점이 있었다.
Further, a thermosetting polyimide resin composition (Japanese Patent Laid-Open No. Hei 10-195278) is disclosed which is heat-treated at a low temperature for a short time to produce a polyimide resin film excellent in adhesiveness, solvent resistance and the like. However, the above-mentioned thermosetting resin has a disadvantage that it does not exhibit sufficient heat resistance or its transparency is low, and its use field is limited.
본 발명은 내열성이 우수하고, 가시광 영역에서 투과율이 우수한 폴리이미드 실리콘 수지를 제공하는데 그 목적이 있다.
An object of the present invention is to provide a polyimide silicone resin excellent in heat resistance and excellent in transmittance in a visible light region.
상기 목적을 달성하기 위하여, 본 발명은 하기 화학식 1, 화학식 2 또는 이들의 혼합물인 방향족 디아민과; 하기 화학식 3, 화학식 4 또는 이들의 혼합물인 테트라카르복실산 이무수물이 중합된 폴리이미드 실리콘 수지를 제공한다.In order to accomplish the above object, the present invention provides an aromatic diamine compound represented by the following general formula (1), (2), or a mixture thereof; There is provided a polyimide silicone resin obtained by polymerizing a tetracarboxylic dianhydride represented by the following general formula (3), (4) or a mixture thereof.
(화학식 1 내지 4중, R1 및 R2는 각각 독립적으로 탄소수 1 내지 6의 지방족 탄화수소기 또는 페닐기이거나, R1 및 R2는 인접하는 탄소가 연결되어 고리를 형성한 것임).(In the formulas (1) to (4), R 1 and R 2 are each independently an aliphatic hydrocarbon group or a phenyl group having 1 to 6 carbon atoms, or R 1 and R 2 are adjacent carbon atoms to form a ring).
바람직하기로, 상기 화학식 1 내지 4의 R1 및 R2는 각각 독립적으로 메틸기, 에틸기 또는 페닐기이거나, R1 및 R2는 인접하는 탄소가 연결되어 고리를 형성한 것일 수 있다.Preferably, R 1 and R 2 in the general formulas (1) to (4) are each independently a methyl group, an ethyl group or a phenyl group, or R 1 and R 2 may be adjacent carbon atoms to form a ring.
보다 바람직하기로, 상기 화학식 1은 하기 화학식 5 내지 8중에서 선택된 1종 이상일 수 있다.More preferably, the formula (1) may be at least one selected from the following formulas (5) to (8).
보다 바람직하기로, 상기 화학식 2는 하기 화학식 9 내지 16중에서 선택된 1종 이상일 수 있다.More preferably, the formula (2) may be at least one selected from the following formulas (9) to (16).
보다 바람직하기로, 상기 화학식 3은 하기 화학식 17 내지 20중에서 선택된 1종 이상일 수 있다.More preferably, the formula (3) may be at least one selected from the following formulas (17) to (20).
보다 바람직하기로, 상기 화학식 4는 하기 화학식 21 내지 24중에서 선택된 1종 이상일 수 있다.More preferably, the formula (4) may be at least one selected from the following formulas (21) to (24).
또한, 본 발명은 상기 폴리이미드 실리콘 수지를 경화시킨 폴리이미드 실리콘 필름을 제공한다.
The present invention also provides a polyimide silicone film obtained by curing the polyimide silicone resin.
본 발명에 따른 폴리이미드 실리콘 수지는 내열성 및 투과율이 우수한 폴리이미드 실리콘 필름을 제조할 수 있는 이점이 있다.The polyimide silicone resin according to the present invention has an advantage that a polyimide silicone film excellent in heat resistance and transmittance can be produced.
따라서, 반도체 장치 중의 컬러 필터나 발광 다이오드, 레이저 다이오드의 보호막, 액정 배향막, 액정 표시 장치, 광학장치용 유연기판, 그 밖의 일렉트로닉스 분야 및 광학 분야에서 유용하다.
Therefore, it is useful in color filters and light emitting diodes in semiconductor devices, protective films for laser diodes, liquid crystal alignment films, liquid crystal display devices, flexible substrates for optical devices, other electronics fields and optical fields.
본 발명은 분자 내에 실리콘기를 함유하여 내열성 및 가시광 영역에서 투과율이 우수한 폴리이미드 실리콘 수지에 관한 것이다.
The present invention relates to a polyimide silicone resin containing a silicon group in a molecule and having excellent heat resistance and excellent transmittance in the visible light region.
이하 본 발명을 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail.
본 발명의 폴리이미드 실리콘 수지는 하기 화학식 1, 화학식 2 또는 이들의 혼합물인 방향족 디아민과; 하기 화학식 3, 화학식 4 또는 이들의 혼합물인 테트라카르복실산 이무수물이 중합된다.The polyimide silicone resin of the present invention comprises an aromatic diamine represented by the following general formula (1), (2), or a mixture thereof; A tetracarboxylic dianhydride represented by the following general formula (3), (4), or a mixture thereof is polymerized.
[화학식 1][Chemical Formula 1]
[화학식 2](2)
[화학식 3](3)
[화학식 4][Chemical Formula 4]
(화학식 1 내지 4중, R1 및 R2는 각각 독립적으로 탄소수 1 내지 6의 지방족 탄화수소기 또는 페닐기이거나, R1 및 R2는 인접하는 탄소가 연결되어 고리를 형성한 것임).(In the formulas (1) to (4), R 1 and R 2 are each independently an aliphatic hydrocarbon group or a phenyl group having 1 to 6 carbon atoms, or R 1 and R 2 are adjacent carbon atoms to form a ring).
바람직하기로, 상기 화학식 1 내지 4의 R1 및 R2는 각각 독립적으로 메틸기, 에틸기 또는 페닐기이거나, R1 및 R2는 인접하는 탄소가 연결되어 고리를 형성한 것일 수 있다.Preferably, R 1 and R 2 in the general formulas (1) to (4) are each independently a methyl group, an ethyl group or a phenyl group, or R 1 and R 2 may be adjacent carbon atoms to form a ring.
보다 바람직하기로, 상기 화학식 1은 하기 화학식 5 내지 8중에서 선택된 1종 이상일 수 있다.More preferably, the formula (1) may be at least one selected from the following formulas (5) to (8).
[화학식 5][Chemical Formula 5]
[화학식 6][Chemical Formula 6]
[화학식 7](7)
[화학식 8][Chemical Formula 8]
보다 바람직하기로, 상기 화학식 2는 하기 화학식 9 내지 16중에서 선택된 1종 이상일 수 있다.More preferably, the formula (2) may be at least one selected from the following formulas (9) to (16).
[화학식 9][Chemical Formula 9]
[화학식 10][Chemical formula 10]
[화학식 11](11)
[화학식 12][Chemical Formula 12]
[화학식 13][Chemical Formula 13]
[화학식 14][Chemical Formula 14]
[화학식 15][Chemical Formula 15]
[화학식 16][Chemical Formula 16]
보다 바람직하기로, 상기 화학식 3은 하기 화학식 17 내지 20중에서 선택된 1종 이상일 수 있다.More preferably, the formula (3) may be at least one selected from the following formulas (17) to (20).
[화학식 17][Chemical Formula 17]
[화학식 18][Chemical Formula 18]
[화학식 19][Chemical Formula 19]
[화학식 20][Chemical Formula 20]
보다 바람직하기로, 상기 화학식 4는 하기 화학식 21 내지 24중에서 선택된 1종 이상일 수 있다.More preferably, the formula (4) may be at least one selected from the following formulas (21) to (24).
[화학식 21][Chemical Formula 21]
[화학식 22][Chemical Formula 22]
[화학식 23](23)
[화학식 24]≪ EMI ID =
본 발명은 목적을 만족하는 범위내에서 상기 화학식 1 및 화학식 2의 방향족 디아민 이외에 당 분야에서 일반적으로 사용되는 디아민을 혼합 사용할 수 있다. 예를 들면 테트라메틸렌디아민, 1,4-디아미노시클로헥산이나 4,4'-디아미노디시클로헥실메탄 등의 지방족 디아민이나 페닐렌디아민, 4,4'-디아미노디페닐에테르, 2,2-비스(4-아미노페닐)프로판 등의 방향족 디아민을 들 수 있고, 단독으로 또는 2종 이상 조합하여 사용할 수 있다.In the present invention, in addition to the aromatic diamines of the above formulas (1) and (2), diamines generally used in the art can be mixed in the range satisfying the object. For example, aliphatic diamines such as tetramethylenediamine, 1,4-diaminocyclohexane and 4,4'-diaminodicyclohexylmethane, phenylene diamine, 4,4'-diaminodiphenyl ether, 2,2 -Bis (4-aminophenyl) propane, etc. These aromatic diamines may be used alone or in combination of two or more.
이때, 화학식 1 및 화학식 2의 방향족 디아민과 혼합되는 디아민은 내열성과 광투과율을 고려하여 상기 화학식 1 100중량부에 대하여 100중량부 이하로 함유하는 것이 바람직하다. In this case, the diamine mixed with the aromatic diamine of the formulas (1) and (2) is preferably contained in an amount of 100 parts by weight or less based on 100 parts by weight of the compound of the formula (1) in consideration of heat resistance and light transmittance.
또한, 본 발명은 목적을 만족하는 범위내에서 상기 화학식 3 및 화학식 4의 테트라카르복시산 이무수물 이외에 당 분야에서 일반적으로 사용되는 테트라카르복시산 이무수물을 혼합 사용할 수 있다. In addition, the tetracarboxylic dianhydride of the general formula (3) and the general formula (4) may be mixed with the tetracarboxylic dianhydride generally used in the art within the range satisfying the object of the present invention.
일례로, 하기 화학식 25로 표시되는 방향족 테트라카르복시산 이무수물을 사용할 수 있으며, 이는 단독 또는 2종 이상 혼합하여 사용할 수 있다.For example, aromatic tetracarboxylic acid dianhydrides represented by the following formula (25) may be used, either alone or in combination.
[화학식 25](25)
(식 중, X는 CH2, O, S, C(CH3)2, C(CF3)2 또는 SO2임).(Wherein X is CH 2 , O, S, C (CH 3 ) 2 , C (CF 3 ) 2 or SO 2 ).
이때, 화학식 3 및 화학식 4의 테트라카르복시산 이무수물과 혼합되는 테트라카르복시산 이무수물은 내열성과 광투과율을 고려하여 상기 상기 화학식 3 및 화학식 4의 100중량부에 대하여 100중량부 이하로 함유하는 것이 바람직하다. The tetracarboxylic dianhydride mixed with the tetracarboxylic dianhydrides of the formulas (3) and (4) is preferably contained in an amount of 100 parts by weight or less based on 100 parts by weight of the above formulas (3) and (4) in consideration of heat resistance and light transmittance .
본 발명에 따른 폴리이미드 실리콘 수지의 제조 방법은 용매 존재하에 방향족 디아민과 테트라카르복실산 이무수물을 거의 등몰수로 사용하여, 고온으로만 중합시키는 1단 중합법, 또는 먼저 저온에서 아믹산을 합성한 후에 고온에서 이미드화하는 2단 중합법 중 어느 것을 사용해도 좋다.The process for producing a polyimide silicone resin according to the present invention is a one-step polymerization method in which an aromatic diamine and a tetracarboxylic dianhydride are used in almost equimolar amounts in the presence of a solvent and is polymerized only at a high temperature, And a two-stage polymerization method in which imidization is carried out at a high temperature.
테트라카르복실산 이무수물에 대한 방향족 디아민의 비율은 폴리이미드 실리콘 수지의 분자량 등에 따라 적절히 조절될 수 있다. 방향족 디아민은 0.95 내지 1.05몰비, 바람직하게는 0.98 내지 1.02몰비인 것이 좋다. The ratio of the aromatic diamine to the tetracarboxylic dianhydride can be appropriately adjusted depending on the molecular weight of the polyimide silicone resin and the like. The aromatic diamine preferably has a molar ratio of 0.95 to 1.05, preferably 0.98 to 1.02.
또한, 폴리이미드 실리콘 수지의 분자량을 조정하기 위해서, 무수 프탈산, 아닐린 등의 일관능의 원료를 첨가할 수도 있다. 이 경우 폴리이미드 실리콘 수지에 대하여 2몰% 이하가 바람직하다.In order to adjust the molecular weight of the polyimide silicone resin, monofunctional raw materials such as phthalic anhydride and aniline may be added. In this case, it is preferably 2 mol% or less based on the polyimide silicone resin.
1단 중합법인 경우, 반응 온도는 150 내지 300 ℃이고, 반응 시간은 1 내지 15 시간 동안 수행한다. 또한 2단 중합법인 경우, 폴리아믹산 합성은 0 내지 120 ℃의 온도에서 1 내지 100 시간 수행하고, 이미드화는 0 내지 300 ℃의 온도에서 1 내지 15 시간 수행한다.In the case of the one-stage polymerization method, the reaction temperature is 150 to 300 ° C, and the reaction time is 1 to 15 hours. In the case of a two-stage polymerization method, the polyamic acid synthesis is carried out at a temperature of 0 to 120 ° C for 1 to 100 hours, and the imidization is carried out at a temperature of 0 to 300 ° C for 1 to 15 hours.
합성 시 사용 가능한 용매는 원료인 방향족 디아민과 테트라카르복실산 이무수물 및 생성물인 폴리이미드 실리콘 수지와 상용성을 갖는 것이 바람직하다. 구체적으로 페놀, 4-메톡시페노-4-메톡시페놀, 2,6-디메틸페놀, m-크레졸 등의 페놀류; 테트라히드로푸란, 아니솔 등의 에테르류; 시클로헥사논, 2-부타논, 메틸이소부틸케톤, 2-헵타논, 2-옥타논, 아세토페논 등의 케톤류; 아세트산부틸, 벤조산메틸, γ-부티로락톤 등의 에스테르류; 부틸셀로솔브 아세테이트, 프로필렌글리콜 모노메틸에테르 아세테이트 등의 셀로솔브류; N,N-디메틸포름아미드, N,N-디메틸아세토아미드, N-메틸-2-피롤리돈 등의 아미드류 등이 사용될 수 있다.It is preferable that the solvent usable in the synthesis has compatibility with the aromatic diamine as the raw material, the tetracarboxylic dianhydride and the product polyimide silicone resin. Specifically, phenols such as phenol, 4-methoxypheno-4-methoxyphenol, 2,6-dimethylphenol and m-cresol; Ethers such as tetrahydrofuran and anisole; Ketones such as cyclohexanone, 2-butanone, methyl isobutyl ketone, 2-heptanone, 2-octanone and acetophenone; Esters such as butyl acetate, methyl benzoate and? -Butyrolactone; Cellosolves such as butyl cellosolve acetate and propylene glycol monomethyl ether acetate; Amides such as N, N-dimethylformamide, N, N-dimethylacetoamide and N-methyl-2-pyrrolidone can be used.
또한, 톨루엔, 크실렌 등의 방향족 탄화수소류를 병용하면 이미드화 시 생성되는 물을 공비에 의해 제거하기 쉽다. 이러한 용매는 단독 또는 2종 이상 혼합하여 사용할 수도 있다.In addition, when aromatic hydrocarbons such as toluene and xylene are used in combination, it is easy to remove water generated by imidization by azeotropy. These solvents may be used alone or in combination of two or more.
본 발명은 방향족 디아민 및 테트라카르복실산 이무수물 중 적어도 한쪽을 복수종 사용하는 경우에는 원료를 미리 모두 혼합한 후에 함께 중축합시키는 방법, 또는 사용되는 2종 이상의 방향족 디아민 또는 테트라카르복실산 이무수물을 개별적으로 반응시키면서 차례로 첨가하는 방법 등이 사용될 수 있다.In the case of using a plurality of aromatic diamines and tetracarboxylic dianhydrides in plural types, the present invention is characterized in that the raw materials are mixed beforehand and then subjected to polycondensation together, or a method in which two or more aromatic diamines or tetracarboxylic acid dianhydrides And then adding them sequentially while reacting them individually.
또한, 이미드화 과정에서 탈수제 및 이미드화 촉매를 첨가하고 필요에 따라 가열하여 이미드화시키는 방법을 사용할 수 있다. 상기 탈수제는 예를 들면 무수 아세트산, 무수 프로피온산, 무수 트리플루오로아세트산 등의 산 무수물을 사용할 수 있다. 이러한 탈수제는 방향족 디아민 1 몰에 대하여 1 내지 10 몰로 사용하는 것이 바람직하다.Further, in the imidization process, a method of adding a dehydrating agent and an imidation catalyst, and heating and imidizing them if necessary can be used. As the dehydrating agent, for example, acid anhydrides such as acetic anhydride, propionic anhydride, and trifluoroacetic anhydride can be used. Such a dehydrating agent is preferably used in an amount of 1 to 10 moles per mole of the aromatic diamine.
상기 이미드화 촉매는 예를 들면 피리딘, 콜리딘, 루티딘, 트리에틸아민 등의 3급 아민을 사용할 수 있다. 이러한 이미드화 촉매는 탈수제 1 몰에 대하여 0.5 내지 10 몰로 사용하는 것이 바람직하다.As the imidization catalyst, for example, tertiary amines such as pyridine, collidine, lutidine and triethylamine can be used. The imidization catalyst is preferably used in an amount of 0.5 to 10 moles per mole of the dehydrating agent.
본 발명에 따른 폴리이미드 실리콘 수지는 용해성이 우수하므로 각종 기재 상에 코팅되기 쉽도록 유기 용제에 용해시켜 적당한 점도로 조정하는 것이 가능하다.Since the polyimide silicone resin according to the present invention has excellent solubility, it can be dissolved in an organic solvent and adjusted to a suitable viscosity so as to be easily coated on various substrates.
상기 폴리이미드 실리콘 수지를 용해시킬 수 있는 유기 용제는 폴리이미드 실리콘 수지 합성에 사용되는 일반적인 유기 용제, 합성시와 다른 방향족 탄화수소계 용제, 케톤계 용제 등이 사용될 수 있다. 이중 저비점의 방향족 탄화수소계 용제 또는 케톤계 용제 등에 용해하고자 하는 경우에는 제조된 폴리이미드 실리콘 수지 용액에 빈용매를 첨가하여 재침전시키는 등의 방법에 의해 정제된 폴리이미드 실리콘 수지를 다시 용해시킬 때에 사용할 수 있다.The organic solvent capable of dissolving the polyimide silicone resin may be a general organic solvent used for the synthesis of polyimide silicone resin, an aromatic hydrocarbon solvent different from the synthetic solvent, a ketone solvent, or the like. When it is desired to dissolve in a double low boiling aromatic hydrocarbon solvent or a ketone solvent, it is preferable to use the polyimide silicone resin which is refined by a method such as adding a poor solvent to the prepared polyimide silicone resin solution and re- .
본 발명의 폴리이미드 실리콘 수지가 코팅 가능한 기재는 철, 구리, 니켈, 알루미늄 등의 금속; 유리 등의 무기물; 에폭시계 수지, 아크릴 수지 등의 유기 수지일 수도 있다. The substrate to which the polyimide silicone resin of the present invention can be coated is a metal such as iron, copper, nickel, or aluminum; Inorganic substances such as glass; An epoxy resin, and an acrylic resin.
또한, 본 발명은 제조된 폴리이미드 실리콘 수지 중 페놀기와 반응하는 물질을 첨가하여 열경화성을 보다 향상시킬 수 있다. 상기 페놀기와 반응하는 물질은 카르복실기, 아미노기, 에폭시기 등의 페놀기와 반응 가능한 관능기를 2 이상 포함하는 수지, 올리고머 등의 다관능성의 유기 화합물을 들 수 있다.
In addition, the present invention can further improve the thermosetting property by adding a substance that reacts with a phenol group in the produced polyimide silicone resin. Examples of the substance that reacts with the phenol group include a multifunctional organic compound such as a resin or oligomer containing two or more functional groups capable of reacting with a phenol group such as a carboxyl group, an amino group, and an epoxy group.
또한, 본 발명은 상기 폴리이미드 실리콘 수지를 경화시킨 폴리이미드 실리콘 수지 필름에 특징이 있다.Further, the present invention is characterized by a polyimide silicone resin film obtained by curing the polyimide silicone resin.
상기 경화는 통상적인 조건에서 수행될 수 있으며, 구체적으로 80℃ 내지 300℃, 바람직하게는 100℃ 내지 250℃ 온도에서 수행되는 것이 좋다. 상기 경화 온도가 80℃ 미만이면 경화시간이 길어 실용성이 낮고 저온에 사용되는 기구 선택 시 보존 안정성의 문제가 발생할 수 있다.The curing may be carried out under ordinary conditions, specifically at a temperature of 80 to 300 ° C, preferably 100 to 250 ° C. If the curing temperature is less than 80 캜, the curing time is long and practicality is low, and storage stability may be a problem when selecting a device to be used at a low temperature.
또한, 종래의 폴리아믹산 용액과 달리 도포 후에 300℃ 보다 높은 고온에서 장시간의 가열을 필요로 하지 않으므로 기재의 열에 의한 열화를 억제할 수 있다.In addition, unlike the conventional polyamic acid solution, it does not require heating for a long period of time at a high temperature higher than 300 deg. C after coating, and deterioration due to heat of the substrate can be suppressed.
상기 폴리이미드 실리콘 수지 필름은 필름두께가 10㎛일 때, 400 내지 700㎚영역(가시광)에서 투과율이 80% 이상(필름두께 10㎛에서)을 나타낸다.
The polyimide silicone resin film exhibits a transmittance of 80% or more (at a film thickness of 10 mu m) in a region of 400 to 700 nm (visible light) when the film thickness is 10 mu m.
이하, 본 발명의 이해를 돕기 위하여 바람직한 실시예를 제시하나, 하기 실시예는 본 발명을 예시하는 것일 뿐 본 발명의 범주 및 기술사상 범위 내에서 다양한 변경 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속하는 것도 당연한 것이다.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention. Such variations and modifications are intended to be within the scope of the appended claims.
합성예Synthetic example 1 내지 8: 방향족 1 to 8: aromatic 디아민Diamine
합성예Synthetic example 1: 화학식 5 1: Formula 5
p-브로모아닐린 (68.8g, 0.40mol)을 THF (400ml)에 녹이고, 온도를 0℃로 낮추었다. 이후에 2.2M 농도의 n-부틸리튬/헥산 용액(418ml, 0.92 mol)에 천천히 적하하고 온도를 상온으로 승온한 뒤 3시간 동안 교반하였다. 이후에 클로로트리메틸실란 (117ml, 0.92mol)을 천천히 적하한 뒤, 상온에서 24시간 동안 교반하였다. 상기 반응혼합물을 글래스 필터로 필터한 뒤, 용매를 감압증류하여 제거하였다. 얻어진 반응 혼합물을 아세톤 (500mL)와 증류수 (20mL)에 녹이고 24시간 동안 교반시키고, MgSO4(100g)을 추가한 후 1시간 동안 교반하였다. 이후에 글래스 필터로 필터한 뒤, 용매를 감압증류하여 제거하여 화학식 5를 얻었다.p-Bromoaniline (68.8 g, 0.40 mol) was dissolved in THF (400 ml) and the temperature was lowered to 0 占 폚. Subsequently, the solution was slowly added dropwise to a 2.2M solution of n-butyllithium / hexane (418 ml, 0.92 mol), the temperature was raised to room temperature, and the mixture was stirred for 3 hours. Then, chlorotrimethylsilane (117 ml, 0.92 mol) was slowly added dropwise and stirred at room temperature for 24 hours. The reaction mixture was filtered with a glass filter, and the solvent was distilled off under reduced pressure. The resulting reaction mixture was dissolved in acetone (500 mL) and distilled water (20 mL), stirred for 24 hours, added with MgSO 4 (100 g), and stirred for 1 hour. Thereafter, after filtering with a glass filter, the solvent was distilled off under reduced pressure to obtain a compound of formula (5).
[반응식 1][Reaction Scheme 1]
(화학식 5) NMR CDCl3; 7.20(4H), 6.40(4H), 3.35(4H), 0.40(6H)
(Chemical Formula 5) NMR CDCl 3 ; 7.20 (4H), 6.40 (4H), 3.35 (4H), 0.40 (6H)
합성예Synthetic example 2: 화학식 6 2: 6
상기 합성예 1과 동일하게 실시하되, 하기 반응식 2와 같이 수행하여 화학식 6을 얻었다.The reaction was carried out in the same manner as in Synthesis Example 1, but was carried out as shown in the following Reaction Scheme 2 to obtain Formula (6).
[반응식 2][Reaction Scheme 2]
(화학식 6) NMR CDCl3; 7.20(4H), 6.40(4H), 3.35(4H), 0.97(6H), 0.79(4H).
(Formula 6) NMR CDCl 3; 7.20 (4H), 6.40 (4H), 3.35 (4H), 0.97 (6H), 0.79 (4H).
합성예Synthetic example 3: 화학식 7 3: Formula 7
상기 합성예 1과 동일하게 실시하되, 하기 반응식 3과 같이 수행하여 화학식 7을 얻었다.The reaction was carried out in the same manner as in Synthesis Example 1, but was carried out according to the following Reaction Scheme 3 to obtain the formula (7).
[반응식 3][Reaction Scheme 3]
(화학식 7) NMR CDCl3; 6.85-7.6(9H), 6.40(4H), 3.35(4H), 0.4(3H).
(Formula 7) NMR CDCl 3; 6.85-7.6 (9H), 6.40 (4H), 3.35 (4H), 0.4 (3H).
합성예Synthetic example 4: 화학식 8 4: Formula 8
상기 합성예 1과 동일하게 실시하되, 하기 반응식 4과 같이 수행하여 화학식 8을 얻었다.The reaction was carried out in the same manner as in Synthesis Example 1, but performing the following Reaction Scheme 4 to obtain the compound of Formula 8.
[반응식 4][Reaction Scheme 4]
(화학식 8) NMR CDCl3; 7.20(4H), 6.40(4H), 3.35(4H), 1.61(4H), 0.78(4H).
(Formula 8) NMR CDCl 3; 7.20 (4H), 6.40 (4H), 3.35 (4H), 1.61 (4H), 0.78 (4H).
합성예Synthetic example 5: 화학식 10 5: 10
P-브로모페놀 (172g, 1mol)과 벤질브로마이드 (178.5g, 1.05mol)을 아세토니트릴(1L)에 녹이고, K2CO3 (176g, 2mol)을 추가하여 50℃에서 24시간 반응시킨 후, 글래스 필터로 필터한 뒤 용매를 감압증류하여 제거 하였다. 상기 반응 혼합물을 무수THF에 녹이고 온도를 -78℃로 낮추고, 2.2M의 n-BuLi 헥산용액을 n-BuLi이 1.15mol이 되도록 천천히 적가하였다. 이후에 디메틸디클로로실란 (64g, 0.5mol)을 천천히 적하하고 온도를 상온으로 올려 24시간 동안 교반한 후 글래스 필터 필터한 뒤, 용매를 감압증류하여 제거하였다. 상기 반응혼합물을 다시 THF (500mL)와 EtOH (500mL)에 녹이고, 10% Pd/C을 Pd의 농도가 0.05mol이 되도록 첨가하고, 암모늄포메이드 200g을 추가한 뒤, 2시간 동안 가열 환류하였다. 이후에 상기 반응 혼합물은 글래스 필터로 필터한 뒤, 용매를 감압증류하여 제거하여 디올중간체(화학식 26)를 얻었다.After dissolving P-bromophenol (172 g, 1 mol) and benzyl bromide (178.5 g, 1.05 mol) in acetonitrile (1 L), K 2 CO 3 (176 g, 2 mol) was added and reacted at 50 ° C for 24 hours, After filtering with a glass filter, the solvent was removed by distillation under reduced pressure. The reaction mixture was dissolved in anhydrous THF, the temperature was lowered to -78 ° C, and a 2.2M n-BuLi hexane solution was slowly added dropwise so that n-BuLi became 1.15mol. Dimethyldichlorosilane (64 g, 0.5 mol) was then slowly added dropwise, the temperature was raised to room temperature, stirred for 24 hours, filtered through a glass filter, and then the solvent was distilled off under reduced pressure. The reaction mixture was again dissolved in THF (500 mL) and EtOH (500 mL), and 10% Pd / C was added thereto so that the concentration of Pd became 0.05 mol, 200 g of ammonium formate was added and the mixture was refluxed for 2 hours. Thereafter, the reaction mixture was filtered with a glass filter, and then the solvent was distilled off under reduced pressure to obtain a diol intermediate (Formula 26).
상기 얻어진 디올중간체 (100g, 0.41mol)과 플루오로니트로벤젠 (141g, 1.0mol)을 DMF (500mL)에 녹이고, CuI (0.1mol)와 K2CO3 (138g, 1mol)를 추가한 후 2시간 동안 가열환류하고 글래스 필터로 필터하고 용매를 감압증류하여 제거하여 니트로중간체(화학식 27)를 얻었다.Dissolve the intermediate diol (100g, 0.41mol) and nitrobenzene (141g, 1.0mol) obtained in the fluoro DMF (500mL), CuI (0.1mol ) and K 2 CO 3 (138 g, 1 mol) was added, and the mixture was refluxed for 2 hours, filtered with a glass filter, and the solvent was distilled off under reduced pressure to obtain a nitro intermediate (Formula 27).
상기 얻어진 니트로중간체를 다시 THF (500mL)와 EtOH (500mL)에 녹이고, 10% Pd/C을 Pd의 농도가 0.05mol이 되도록 첨가한 뒤 암모늄 포메이트 200g을 추가하고 2시간 동안 가열 환류하였다. 상기 반응 혼합물은 글래스 필터로 필터한 후 용매를 감압증류하여 화학식 10을 얻었다.The obtained nitro intermediate was dissolved again in THF (500 mL) and EtOH (500 mL), and 10% Pd / C was added thereto so that the concentration of Pd became 0.05 mol. Then, 200 g of ammonium formate was added and refluxed for 2 hours. The reaction mixture was filtered with a glass filter, and the solvent was distilled off under reduced pressure to obtain the compound of formula (10).
[반응식 5][Reaction Scheme 5]
(화학식 26) NMR/Acetone-d6; 8.42(2H), 7.35(4H), 6.84(4H), 0.45(6H).(26) NMR / Acetone-d 6 ; 8.42 (2H), 7.35 (4H), 6.84 (4H), 0.45 (6H).
(화학식 27) NMR/CDCl3; 8.20(4H), 7.57(4H), 7.08(4H), 7.04(4H), 0.59(6H).(Formula 27) NMR / CDCl 3; 8.20 (4H), 7.57 (4H), 7.08 (4H), 7.04 (4H), 0.59 (6H).
(화학식 10) NMR/CDCl3; 7.41(4H), 6.90(4H), 6.87(4H), 6.67(4H), 3.59(4H), 0.50(6H).
(Formula 10) NMR / CDCl 3; 7.41 (4H), 6.90 (4H), 6.87 (4H), 6.67 (4H), 3.59 (4H), 0.50 (6H).
합성예Synthetic example 6: 화학식 12 6:
상기 합성예 5와 동일하게 실시하되, 하기 반응식 6과 같이 수행하여 화학식 12을 얻었다.Was carried out in the same manner as in Synthesis Example 5, but performing the following Reaction Scheme 6 to obtain the compound of Formula 12.
[반응식 6][Reaction Scheme 6]
(화학식 28) NMR/Acetone-d6; 8.43(2H), 7.34(4H), 6.83(4H), 0.98(6H), 0.80(4H).(28) NMR / Acetone-d 6 ; 8.43 (2H), 7.34 (4H), 6.83 (4H), 0.98 (6H), 0.80 (4H).
(화학식 29) NMR/CDCl3; 8.21(4H), 7.58(4H), 7.09(4H), 7.05(4H), 0.97(6H), 0.79(4H).(Formula 29) NMR / CDCl 3; 8.21 (4H), 7.58 (4H), 7.09 (4H), 7.05 (4H), 0.97 (6H), 0.79 (4H).
(화학식 12) NMR/CDCl3; 7.42(4H), 6.91(4H), 6.88(4H), 6.69(4H), 3.61(4H), 0.96(6H), 0.78(4H).
(Formula 12) NMR / CDCl 3; 7.42 (4H), 6.91 (4H), 6.88 (4H), 6.69 (4H), 3.61 (4H), 0.96 (6H), 0.78 (4H).
합성예Synthetic example 7: 화학식 14 7: 14
상기 합성예 5와 동일하게 실시하되, 하기 반응식 7과 같이 수행하여 화학식 14를 얻었다.The reaction was carried out in the same manner as in Synthesis Example 5, but performing the following Reaction Scheme 7 to obtain the formula (14).
[반응식 7][Reaction Scheme 7]
(화학식 30) NMR/Acetone-d6; 7.53(3H), 7.35(4H), 6.87 (2H), 6.84(4H), 0.55(3H).(30) NMR / Acetone-d 6 ; 7.53 (3H), 7.35 (4H), 6.87 (2H), 6.84 (4H), 0.55 (3H).
(화학식 31) NMR/CDCl3; 8.20(4H), 7.57(4H), 7.55(3H), 7.08(4H), 7.04(4H), 6.88 (2H), 0.56(3H).(Formula 31) NMR / CDCl 3; 8.20 (4H), 7.57 (4H), 7.55 (3H), 7.08 (4H), 7.04 (4H), 6.88 (2H), 0.56 (3H).
(화학식 14) NMR/CDCl3; 7.55(3H), 7.41(4H), 6.90(4H), 6.87(6H), 6.67(4H), 3.62(4H), 0.55(6H).
(Formula 14) NMR / CDCl 3; 7.55 (3H), 7.41 (4H), 6.90 (4H), 6.87 (6H), 6.67 (4H), 3.62 (4H), 0.55 (6H).
합성예Synthetic example 8: 화학식 16 8: 16
상기 합성예 5와 동일하게 실시하되, 하기 반응식 8과 같이 수행하여 화학식 16을 얻었다.The reaction was carried out in the same manner as in Synthesis Example 5, but performing the following Reaction Scheme 8 to obtain the compound of Formula 16.
[반응식 8][Reaction Scheme 8]
(화학식 32) NMR/Acetone-d6; 8.43(2H), 7.34(4H), 6.86(4H), 1.61(4H), 0.78(4H).(32) NMR / Acetone-d 6 ; 8.43 (2H), 7.34 (4H), 6.86 (4H), 1.61 (4H), 0.78 (4H).
(화학식 33) NMR/CDCl3; 8.21(4H), 7.56(4H), 7.09(4H), 7.03(4H), 1.65(4H), 0.79(4H).(Formula 33) NMR / CDCl 3; 8.21 (4H), 7.56 (4H), 7.09 (4H), 7.03 (4H), 1.65 (4H), 0.79 (4H).
(화학식 16) NMR/CDCl3; 7.41(4H), 6.90(4H), 6.87(4H), 6.67(4H), 3.59(4H), 1.59(4H), 0.75(4H).
(Formula 16) NMR / CDCl 3; 7.41 (4H), 6.90 (4H), 6.87 (4H), 6.67 (4H), 3.59 (4H), 1.59 (4H), 0.75 (4H).
합성예Synthetic example 9 내지 16: 9 to 16: 테트라카르복실산Tetracarboxylic acid 이무수물Water
합성예Synthetic example 9: 화학식 17 9: 17
4-브로모-1,2-디메틸벤젠 (73.2g, 0.40mol)을 THF (400ml)에 녹이고, 온도를 0℃로 낮추어 2.2M 농도의 n-부틸리튬/헥산 용액 (209ml, 0.46mol) 천천히 적하하고, 온도를 상온으로 승온한 뒤 3시간동안 교반하였다. 이후에 디클로로디메틸실란 (25.6g, 0.2 mol)을 천천히 적하하여 상온에서 24시간 추가 교반하여 얻어진 반응혼합물을 글래스 필터로 필터한 뒤, 용매를 감압증류하여 제거하였다. 얻어진 반응혼합물을 피리딘 (300mL)와 증류수 (200mL)에 녹이고, KMnO4 (100g)을 가한 다음 80℃에서 24시간 동안 교반시키고 글래스 필터로 한 후 용매를 감압증류하여 제거하였다.(73.2 g, 0.40 mol) was dissolved in THF (400 ml), and the temperature was lowered to 0 ° C to slowly add a 2.2 M solution of n-butyllithium / hexane (209 ml, 0.46 mol) After the temperature was raised to room temperature, the mixture was stirred for 3 hours. Then, dichlorodimethylsilane (25.6 g, 0.2 mol) was slowly added dropwise and further stirred at room temperature for 24 hours. The obtained reaction mixture was filtered with a glass filter, and the solvent was distilled off under reduced pressure. The resulting reaction mixture was dissolved in pyridine (300 mL) and distilled water (200 mL), KMnO 4 (100 g) was added, and the mixture was stirred at 80 ° C for 24 hours. The mixture was filtered through a glass filter and the solvent was distilled off under reduced pressure.
이후에 아세트산 무수물 300mL를 가하고, 10시간 동안 가열 환류한 후 용매를 감압 증류하여 제거하여 화학식 17을 얻었다.Thereafter, 300 mL of acetic anhydride was added, and the mixture was refluxed for 10 hours. The solvent was distilled off under reduced pressure to obtain the compound of formula (17).
[반응식 9] [Reaction Scheme 9]
(화학식 17) NMR/CDCl3; 7.98(2H), 7.94(2H), 7.77(2H), 0.56(6H).
(Formula 17) NMR / CDCl 3; 7.98 (2H), 7.94 (2H), 7.77 (2H), 0.56 (6H).
합성예Synthetic example 10: 화학식 18 10: 18
상기 합성예 9와 동일하게 실시하되, 하기 반응식 10과 같이 수행하여 화학식 18을 얻었다.The reaction was carried out in the same manner as in Synthesis Example 9, but performing the following Reaction Scheme 10 to obtain the compound of Formula 18.
[반응식 10][Reaction Scheme 10]
(화학식 18) NMR/CDCl3; 7.99(2H), 7.93(2H), 7.79(2H), 0.97(6H), 0.84(4H).
(Formula 18) NMR / CDCl 3; 7.99 (2H), 7.93 (2H), 7.79 (2H), 0.97 (6H), 0.84 (4H).
합성예Synthetic example 11: 화학식 19 11: 19
상기 합성예 9와 동일하게 실시하되, 하기 반응식 11과 같이 수행하여 화학식 19를 얻었다.The reaction was carried out in the same manner as in Synthesis Example 9, but performing the following Reaction Scheme 11 to obtain the compound of Formula 19.
[반응식 11][Reaction Scheme 11]
(화학식 19) NMR/CDCl3; 8.02(2H), 7.98(2H), 7.83 (2H), 7.57(3H), 6.91 (2H), 0.58(3H).
(Formula 19) NMR / CDCl 3; 8.02 (2H), 7.98 (2H), 7.83 (2H), 7.57 (3H), 6.91 (2H), 0.58 (3H).
합성예Synthetic example 12: 화학식 20 12: 20
상기 합성예 9와 동일하게 실시하되, 하기 반응식 12와 같이 수행하여 화학식 20을 얻었다.The reaction was carried out in the same manner as in Synthesis Example 9, but using the following Reaction Scheme 12 to obtain the compound of Formula 20.
[반응식 12][Reaction Scheme 12]
(화학식 20) NMR/CDCl3; 7.96(2H), 7.91(2H), 7.75(2H), 1.64(4H), 0.79(4H).
(Formula 20) NMR / CDCl 3; 7.96 (2H), 7.91 (2H), 7.75 (2H), 1.64 (4H), 0.79 (4H).
합성예Synthetic example 13: 화학식 21 13: Formula 21
상기 합성예 5에서 얻어진 디올중간체(화학식 26) (122g, 0.5mol)과 3-클로로프탈이미드 (182g, 1mol)를 아세토니트릴 (500ml)에 녹이고, KOH (50g)을 가하였다. 이후에 80℃에서 24시간 동안 교반시키고 글래스 필터로 필터한 후, 용매를 감압증류하여 제거하여 화학식 21을 얻었다.(122 g, 0.5 mol) and 3-chlorophthalimide (182 g, 1 mol) obtained in Synthesis Example 5 were dissolved in acetonitrile (500 ml) and KOH (50 g) was added. Thereafter, the mixture was stirred at 80 DEG C for 24 hours, filtered through a glass filter, and then the solvent was distilled off under reduced pressure to obtain the compound (21).
[화학식 13][Chemical Formula 13]
(화학식 21) NMR/CDCl3; 8.08(2H), 7.79(2H), 7.71(2H), 7.43(4H), 6.92(4H), 0.50(6H).
(Formula 21) NMR / CDCl 3; 8.08 (2H), 7.79 (2H), 7.71 (2H), 7.43 (4H), 6.92 (4H), 0.50 (6H).
합성예Synthetic example 14: 화학식 22 14: 22
상기 합성예 13과 동일하게 실시하되, 하기 반응식 14와 같이 수행하여 화학식 22를 얻었다.The reaction was carried out in the same manner as in Synthesis Example 13, but performing the following Reaction Scheme 14 to obtain Formula 22.
[반응식 14][Reaction Scheme 14]
(화학식 22) NMR/CDCl3; 8.08(2H), 7.79(2H), 7.71(2H), 7.43(4H), 6.92(4H), 0.97(6H), 0.79(4H).
(22) NMR / CDCl 3; 8.08 (2H), 7.79 (2H), 7.71 (2H), 7.43 (4H), 6.92 (4H), 0.97 (6H), 0.79 (4H).
합성예Synthetic example 15: 화학식 23 15: Formula 23
상기 합성예 13과 동일하게 실시하되, 하기 반응식 15와 같이 수행하여 화학식 23를 얻었다.The reaction was carried out in the same manner as in Synthesis Example 13, but using the following Reaction Scheme 15 to obtain the compound of Formula 23.
[반응식 15][Reaction Scheme 15]
(화학식 23) NMR/CDCl3; 8.10(2H), 7.81(2H), 7.74(2H), 7.55(3H), 7.08(4H), 7.04(4H), 6.88 (2H), 0.56(3H).
(Formula 23) NMR / CDCl 3; 8.10 (2H), 7.81 (2H), 7.74 (2H), 7.55 (3H), 7.08 (4H), 7.04 (4H), 6.88 (2H), 0.56
합성예Synthetic example 16: 화학식 24 16: 24
상기 합성예 13과 동일하게 실시하되, 하기 반응식 16과 같이 수행하여 화학식 24를 얻었다.The reaction was carried out in the same manner as in Synthesis Example 13, but performing the following Reaction Scheme 16 to obtain the compound of Formula 24.
[반응식 16][Reaction Scheme 16]
(화학식 24) NMR/CDCl3; 8.06(2H), 7.77(2H), 7.69(2H), 7.43(4H), 6.92(4H), 1.62(4H), 0.79(4H).
(Formula 24) NMR / CDCl 3; 8.06 (2H), 7.77 (2H), 7.69 (2H), 7.43 (4H), 6.92 (4H), 1.62 (4H), 0.79 (4H).
실시예Example 1-15 및 1-15 and 비교예Comparative Example 1-13 1-13
교반기, 온도계, 적하장치, 질소 치환 장치가 부착된 플라스크 내에, 하기 표 1에 따른 화학식 3 또는 화학식 4의 테트라카르복실산 이무수물 0.2몰, 디메틸아세틸아마이드(DMA) 200g 투입하고 50℃로 가온하며 교반하여 용해시켰다. 이후에 실온에서 하기 표 1에 따른 화학식 1 또는 화학식 2의 방향족 디아민 0.2몰을 디메틸아세틸아마이드(DMA) 200g에 용해한 뒤, dropping funnel을 이용하여 1시간 적하한 후 50 ℃에서 5시간동안 교반하였다. 반응 혼합물의 일부를 DMSO-d6 용매에 녹여서 NMR을 측정하여 반응물의 디아민의 존재하지 않음을 확인하였고, IR로 폴리아믹산이 생성됨을 확인하였다. Into a flask equipped with a stirrer, a thermometer, a dropping device and a nitrogen substitution device, 0.2 mol of tetracarboxylic dianhydride of formula (3) or (4) shown below in Table 1 and 200 g of dimethylacetamide (DMA) And dissolved by stirring. Thereafter, 0.2 mol of the aromatic diamine of the formula (1) or (2) according to the following Table 1 was dissolved in 200 g of dimethyl acetylamide (DMA) at room temperature, and then dropped for 1 hour using a dropping funnel, followed by stirring at 50 ° C for 5 hours. A part of the reaction mixture was dissolved in a solvent of DMSO-d 6 and NMR was measured to confirm that diamine was not present in the reactant, and it was confirmed that polyamic acid was generated by IR.
상기 얻어진 폴리아믹산 용액을 유리 기판 상에 도포하고 100℃ 열풍건조기에서 10분간 건조하여 막 두께 10 ㎛의 필름을 제조하였다. 상기 필름에 잔존하는 아믹산을 이미드화하기 위해 하기의 온도 프로파일(profile)로 가열하였다.The obtained polyamic acid solution was coated on a glass substrate and dried in a hot air drier at 100 占 폚 for 10 minutes to produce a film having a thickness of 10 占 퐉. The amic acid remaining on the film was heated to the following temperature profile to imidize it.
이후에 유리 기판으로부터 제조된 필름을 박리하여 폴리이미드 실리콘 필름을 제조하였다.Thereafter, the film produced from the glass substrate was peeled off to produce a polyimide silicone film.
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
시험예Test Example
상기 실시예 및 비교예에서 제조된 폴리이미드 실리콘 수지 및 이로부터 제조된 필름의 물성을 하기의 방법으로 측정하고 그 결과를 하기 표 2에 나타내었다.
The physical properties of the polyimide silicone resin prepared in the above Examples and Comparative Examples and the films prepared therefrom were measured by the following methods, and the results are shown in Table 2 below.
1.투과율1. Transmittance
시마즈사제 UV-3100PC 장비를 이용하여, 500nm파장에서의 투과율을 측정하였다.
The transmittance at a wavelength of 500 nm was measured using a UV-3100PC instrument manufactured by Shimadzu Corporation.
2.내열성2. Heat resistance
TA instruments사의 Q1000장비를 이용하여 Tg를 측정하여 하기와 같이 분류하였다.Tg was measured using a Q1000 instrument manufactured by TA instruments, and classified as follows.
[평가기준][Evaluation standard]
O: Tg가 300℃ 이상 O: Tg of 300 DEG C or higher
×: Tg가 300℃ 미만
占 Tg less than 300 占
상기 표 2와 같이 본 발명에 따른 실시예 1 내지 9의 폴리이미드 실리콘 수지는 비교예 1 내지 13에 비해 내열성 및 투과율이 우수하다는 것을 확인할 수 있었다.
As shown in Table 2, it was confirmed that the polyimide silicone resins of Examples 1 to 9 according to the present invention had better heat resistance and transmittance than Comparative Examples 1 to 13.
Claims (7)
[화학식 1]
[화학식 2]
[화학식 3]
[화학식 4]
(화학식 1 내지 4중, R1 및 R2는 각각 독립적으로 탄소수 1 내지 6의 지방족 탄화수소기 또는 페닐기이거나, R1 및 R2는 인접하는 탄소가 연결되어 고리를 형성한 것임).
An aromatic diamine represented by the following formula (1), (2), or a mixture thereof; A polyimide silicone resin obtained by polymerizing a tetracarboxylic dianhydride represented by the following general formula (3), (4), or a mixture thereof:
[Chemical Formula 1]
(2)
(3)
[Chemical Formula 4]
(In the formulas (1) to (4), R 1 and R 2 are each independently an aliphatic hydrocarbon group or a phenyl group having 1 to 6 carbon atoms, or R 1 and R 2 are adjacent carbon atoms to form a ring).
The polyimide silicone resin according to claim 1, wherein R 1 and R 2 in formulas (1) to (4) are each independently a methyl group, an ethyl group or a phenyl group, or R 1 and R 2 are adjacent carbon atoms to form a ring.
[화학식 5]
[화학식 6]
[화학식 7]
[화학식 8]
The polyimide silicone resin according to claim 2, wherein the formula (1) is at least one selected from the following formulas (5) to (8)
[Chemical Formula 5]
[Chemical Formula 6]
(7)
[Chemical Formula 8]
[화학식 9]
[화학식 10]
[화학식 11]
[화학식 12]
[화학식 13]
[화학식 14]
[화학식 15]
[화학식 16]
The polyimide silicone resin according to claim 2, wherein the formula (2) is at least one selected from the following formulas (9) to (16):
[Chemical Formula 9]
[Chemical formula 10]
(11)
[Chemical Formula 12]
[Chemical Formula 13]
[Chemical Formula 14]
[Chemical Formula 15]
[Chemical Formula 16]
[화학식 17]
[화학식 18]
[화학식 19]
[화학식 20]
The polyimide silicone resin according to claim 2, wherein the formula (3) is at least one selected from the following formulas (17) to (20)
[Chemical Formula 17]
[Chemical Formula 18]
[Chemical Formula 19]
[Chemical Formula 20]
[화학식 21]
[화학식 22]
[화학식 23]
[화학식 24]
The polyimide silicone resin according to claim 2, wherein the formula (4) is at least one selected from the following formulas (21) to (24):
[Chemical Formula 21]
[Chemical Formula 22]
(23)
≪ EMI ID =
8. A polyimide silicone film according to any one of claims 1 to 6, wherein the film has a transmittance of 80% or more (at a film thickness of 10 mu m) in a region of 400 to 700 nm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020130013402A KR20140100281A (en) | 2013-02-06 | 2013-02-06 | Polyimide silicone resin |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020130013402A KR20140100281A (en) | 2013-02-06 | 2013-02-06 | Polyimide silicone resin |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20140100281A true KR20140100281A (en) | 2014-08-14 |
Family
ID=51746234
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020130013402A KR20140100281A (en) | 2013-02-06 | 2013-02-06 | Polyimide silicone resin |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20140100281A (en) |
-
2013
- 2013-02-06 KR KR1020130013402A patent/KR20140100281A/en not_active Application Discontinuation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6721070B2 (en) | Polyimide precursor composition, method for producing polyimide, polyimide, polyimide film, and substrate | |
JP6899830B2 (en) | A polyamic acid solution to which a diamine monomer having a novel structure is applied and a polyimide film containing the same. | |
CN112334511B (en) | Polyimide resin and method for producing same, and polyimide film and method for producing same | |
JP2016125063A (en) | Window film for display device, and display device including the same | |
WO2015053312A1 (en) | Polyimide precursor, polyimide, polyimide film, varnish, and substrate | |
US7550553B2 (en) | Fluorinated diamine and polymer made from the same | |
JP2021178970A (en) | Poly(imide-amide) copolymer, method for preparing poly(imide-amide) copolymer, and article including poly(imide-amide) copolymer | |
JPWO2015080139A1 (en) | Polyimide precursor composition, polyimide production method, polyimide, polyimide film, and substrate | |
KR20160094086A (en) | Composition of preparing article contatining poly(imide-amide), method of preparing same, and article contatining poly(imide-amid) | |
JP2023053917A (en) | Novel diamine, and polymer and film produced therewith | |
EP1408067B1 (en) | Colorless and transparent polyimidesilicone resin having thermosetting functional groups | |
KR101998866B1 (en) | Polyimide resin and polyimide film prepared by using same | |
JPH05194747A (en) | Curable resin, production thereof, and protective film for electronic part | |
KR102462940B1 (en) | Polyimide, composition for preparing polyimide, article including polyimide, and display device including the article | |
KR20140100279A (en) | Tetracarboxylic acid dianhydride and polyimide silicone resin | |
CN111601843A (en) | Cross-linker compound, photosensitive composition comprising the same, and photosensitive material using the same | |
JP4204435B2 (en) | Transparent polyimide silicone resin containing thermosetting groups | |
KR20150001278A (en) | Polyimide resin and resin composition thereof | |
KR20140100281A (en) | Polyimide silicone resin | |
JP4396139B2 (en) | Polymer having silsesquioxane skeleton and method for forming thin film thereof | |
KR102676871B1 (en) | Novel diamine-based compound, manufacturing method thereof, polyamide-based compound, polybenzoxazole film and flexible device | |
JP2004083814A (en) | New polyamic acid and polyimide | |
KR20140096517A (en) | Tetracarboxylic acid dianhydride and polyimide silicone resin | |
KR20140098373A (en) | Diamine compounds and polyimide silicone resin | |
KR20230134439A (en) | Novel diamine compounds and polyamide polymer derived therefrom |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |