KR20140092958A - Light emitting device - Google Patents

Light emitting device Download PDF

Info

Publication number
KR20140092958A
KR20140092958A KR1020130001177A KR20130001177A KR20140092958A KR 20140092958 A KR20140092958 A KR 20140092958A KR 1020130001177 A KR1020130001177 A KR 1020130001177A KR 20130001177 A KR20130001177 A KR 20130001177A KR 20140092958 A KR20140092958 A KR 20140092958A
Authority
KR
South Korea
Prior art keywords
layer
dispersion
light emitting
band gap
energy band
Prior art date
Application number
KR1020130001177A
Other languages
Korean (ko)
Other versions
KR102007273B1 (en
Inventor
문용태
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020130001177A priority Critical patent/KR102007273B1/en
Publication of KR20140092958A publication Critical patent/KR20140092958A/en
Application granted granted Critical
Publication of KR102007273B1 publication Critical patent/KR102007273B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

Abstract

A light emitting device according to one embodiment of the present invention includes a first semiconductor layer; a current injection layer which is arranged on the first semiconductor layer and includes a plurality of injection well layers with an energy bandgap which is smaller than the energy bandgap of the first semiconductor layer; an active layer which is arranged on the current injection layer; a second semiconductor layer which is arranged on the active layer; and a current dispersion layer which is arranged between the first semiconductor layer and the current injection layer and includes a dispersion well layer with an energy bandgap which is smaller than the energy bandgap of the first semiconductor layer and a dispersion barrier layer with an energy bandgap which is larger than the energy bandgap of the first semiconductor layer.

Description

[0001]

An embodiment relates to a light emitting element.

LED (Light Emitting Diode) is a device that converts electrical signals into infrared, visible light or light using the characteristics of compound semiconductors. It is used in household appliances, remote controls, display boards, The use area of LED is becoming wider.

In general, miniaturized LEDs are made of a surface mounting device for mounting directly on a PCB (Printed Circuit Board) substrate, and an LED lamp used as a display device is also being developed as a surface mounting device type . Such a surface mount device can replace a conventional simple lighting lamp, which is used for a lighting indicator for various colors, a character indicator, an image indicator, and the like.

LED semiconductors are grown by a process such as MOCVD or molecular beam epitaxy (MBE) on a substrate such as sapphire or silicon carbide (SiC) having a hexagonal system structure.

In the active layer, the holes provided in the p-type semiconductor layer and the electrons provided in the n-type semiconductor layer recombine to generate light. It is important to improve the recombination probability of holes and electrons in the active layer because it is an important issue for improving the light efficiency. In particular, it is important that the light efficiency can be maximized at 10 to 60 A / cm < 2 > within the driving range of commercialized products. It is also necessary to improve the efficiency droop due to the increase of the drive current density of the product.

In the active layer, the holes provided in the p-type semiconductor layer and the electrons provided in the n-type semiconductor layer recombine to generate light. It is important to improve the recombination probability of holes and electrons in the active layer because it is an important issue for improving the light efficiency.

The embodiment provides a light emitting device with improved light efficiency.

A light emitting device according to an embodiment of the present invention includes a first semiconductor layer; A current injection layer disposed on the first semiconductor layer and including a plurality of injection well layers having a smaller energy band gap than the first semiconductor layer; An active layer disposed on the current injection layer; A second semiconductor layer disposed on the active layer; And a dispersion well layer disposed between the first semiconductor layer and the current injection layer and having an energy band gap smaller than the energy band gap of the first semiconductor layer and a dispersion barrier layer having an energy band gap larger than the energy band gap of the first semiconductor layer, And a current-spreading layer including a layer.

The light emitting device according to an embodiment of the present invention can maximize the recombination rate of holes and electrons by disposing a current dispersion layer between the first semiconductor layer and the current injection layer and diffusing the current to the front of the semiconductor layer.

The light emitting device according to an embodiment of the present invention may alternately stack the dispersion well layer and the dispersion barrier layer so that electrons are horizontally dispersed in the dispersion well layer so that holes and electrons are recombined in a wider area of the active layer .

In the light emitting device according to an embodiment of the present invention, a dispersion intermediate layer is disposed between the dispersion well layer and the dispersion barrier layer, thereby reducing an instantaneous variation amount of the energy band gap in the current dispersion layer, thereby relieving the stress between the layers.

The light emitting device according to an embodiment of the present invention includes a dispersion interlayer disposed at a position in contact with the current injection layer of the dispersion barrier layer to reduce an instantaneous change in the energy band gap between the dispersion barrier layer and the current injection layer, Can be mitigated.

1 is a cross-sectional view illustrating a structure of a light emitting device according to an embodiment,
2 is a view showing an energy band gap of a light emitting device according to an embodiment,
3 is a view showing energy band gaps of the light emitting device according to the embodiment,
FIG. 4 is a view showing an energy band gap of the light emitting device according to the embodiment,
5 is a view showing energy band gaps of the light emitting device according to the embodiment,
6 is a graph showing the content of aluminum and indium in the dispersion barrier layer of the light emitting device according to the embodiment,
7A is a perspective view showing a light emitting device package including the light emitting device of the embodiment,
FIG. 7B is a cross-sectional view illustrating a light emitting device package including the light emitting device of the embodiment,
8A is a perspective view illustrating a lighting device including a light emitting device module according to an embodiment,
FIG. 8B is a cross-sectional view illustrating a lighting device including a light emitting device module according to an embodiment,
9 is an exploded perspective view showing a backlight unit including a light emitting device module according to an embodiment, and
10 is an exploded perspective view showing a backlight unit including a light emitting device module according to an embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when inverting an element shown in the figures, an element described as "below" or "beneath" of another element may be placed "above" another element. Thus, the exemplary term "below" can include both downward and upward directions. The elements can also be oriented in different directions, so that spatially relative terms can be interpreted according to orientation.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.

Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size and area of each component do not entirely reflect actual size or area.

Further, the angle and direction mentioned in the description of the structure of the light emitting device in the embodiment are based on those shown in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.

Hereinafter, embodiments will be described in detail with reference to the drawings.

1 is a cross-sectional view illustrating a structure of a light emitting device according to an embodiment.

1, a light emitting device 100 according to an exemplary embodiment of the present invention includes a first semiconductor layer 110 and a first semiconductor layer 110. The first semiconductor layer 110 has an energy band gap A current injection layer 130 including a small number of injection well layers 132, an active layer 140 disposed on the current injection layer 130, a second semiconductor layer 150 disposed on the active layer 140, A dispersion well layer 122 and a first semiconductor layer 110 disposed between the first semiconductor layer 110 and the current injection layer 130 and having an energy band gap smaller than the energy band gap of the first semiconductor layer 110, And a dispersion barrier layer 124 having an energy band gap larger than the energy band gap of the current diffusion layer 120. [

A substrate (not shown) may be disposed below the first semiconductor layer 110 or above the second semiconductor layer 150. The substrate (not shown) may support the first semiconductor layer 110 or the second semiconductor layer 150. The substrate (not shown) may receive heat from the first semiconductor layer 110 or the second semiconductor layer 150.

The substrate (not shown) may have optically transmissive properties. For example, the substrate (not shown) may include, but is not limited to, sapphire (Al2O3). The substrate (not shown) may have a light transmitting property when it is formed using a light transmitting material or a material having a predetermined thickness or less, but the present invention is not limited thereto. The refractive index of the substrate (not shown) is preferably smaller than the refractive index of the first semiconductor layer 110 for the purpose of light extraction efficiency, but is not limited thereto.

The substrate (not shown) may be formed of a semiconductor material according to an embodiment, and may include, for example, silicon (Si), germanium (Ge), gallium arsenide (GaAs), zinc oxide (ZnO), silicon carbide , Silicon germanium (SiGe), gallium nitride (GaN), gallium (III) oxide (Ga 2 O 3 ).

The substrate (not shown) may be formed of a conductive material. (Au), nickel (Ni), tungsten (W), molybdenum (Mo), copper (Cu), aluminum (Al), tantalum (Ag), platinum (Pt), and chromium (Cr), or may be formed of two or more alloys, and two or more of the above materials may be laminated. When the substrate (not shown) is formed of metal, the heat generated from the light emitting device can be easily released, thereby improving the thermal stability of the light emitting device.

The substrate (not shown) may have a PSS (Patterned Substrate) structure on its upper surface in order to enhance light extraction efficiency, but the present invention is not limited thereto. The substrate (not shown) facilitates the emission of heat generated in the light emitting device 100, thereby improving the thermal stability of the light emitting device 100.

The first semiconductor layer 110 may be disposed on a substrate (not shown). The first semiconductor layer 110 may be disposed on a buffer layer (not shown) to match the lattice constant difference with the substrate (not shown), but is not limited thereto. Although the first semiconductor layer 110 may be grown on a substrate (not shown), the light emitting device of the embodiment of the present invention is not limited to the horizontal light emitting device and may be applied to the vertical light emitting device.

The first semiconductor layer 110 may be formed of an n-type semiconductor layer. For example, when the light emitting device 100 emits blue light, the n-type semiconductor layer may include, for example, In x Al y Ga 1-xy N (0? X? 1, 0? Y? (AlN), AlGaN (Indium Gallium Nitride), InGaN (Indium Gallium Nitride), InN (Indium Nitride), InAlGaN , AlInN, and the like. The first semiconductor layer 110 may be doped with an n-type dopant such as silicon (Si), germanium (Ge), tin (Sn), selenium (Se), or tellurium (Te).

The first semiconductor layer 110 may be supplied with power from the outside. The first semiconductor layer 110 may provide electrons to the active layer 140.

The active layer 140 may be disposed on the first semiconductor layer 110. The active layer 140 may be disposed between the second semiconductor layer 150 and the first semiconductor layer 110.

The active layer 140 may be formed of a semiconductor material. The active layer 140 may be formed of a single or multi-well structure or the like using a compound semiconductor material of group III-V elements. The active layer 140 may be formed of a nitride semiconductor. For example, the active layer 140 may include gallium nitride (GaN), indium gallium nitride (InGaN), and indium gallium nitride (InAlGaN).

When the active layer 140 emits blue light, for example, the active layer 140 may have a composition formula of In x Al y Ga 1 -x- y N (0 = x = 1, 0 = y = 1, 0 = x + A barrier layer 144 having a composition formula of In a Al b Ga 1 -a b N (0 = a = 1, 0 = b = 1, 0 = a + b = 1) ), But is not limited thereto. The well layers 142 and 146 may be formed of a material having a band gap smaller than the band gap of the barrier layer 144.

The active layer 140 may be formed by alternately stacking a plurality of well layers 142 and 146 and a barrier layer 144. The active layer 140 may include a plurality of well layers 142 and 146 to maximize optical efficiency.

The well layers 142 and 146 may have a smaller energy bandgap than the barrier layer 144. The well layers 142 and 146 may have a smaller energy bandgap than the first semiconductor layer 110. The well layers 142 and 146 may have continuous energy levels of carriers.

The second semiconductor layer 150 may be formed on the active layer 140. The second semiconductor layer 150 may be a p-type semiconductor layer doped with a p-type dopant. When the light emitting device emits light of a blue wavelength, the second semiconductor layer 150 is formed of In x Al y Ga 1 -x- y N (0 = x = 1, 0 = y = 1, 0 = x + y (AlN), AlGaN (Indium Gallium Nitride), InGaN (indium gallium nitride), InN (indium nitride), InAlGaN, and AlInN And a p-type dopant such as magnesium (Mg), zinc (Zn), calcium (Ca), strontium (Sr), barium (Ba) or the like can be doped.

The first semiconductor layer 110, the active layer 140 and the second semiconductor layer 150 may be formed using a metal organic chemical vapor deposition (MOCVD) method, a chemical vapor deposition (CVD) method, May be formed by a method such as chemical vapor deposition (PECVD), molecular beam epitaxy (MBE), or hydride vapor phase epitaxy (HVPE) It is not limited.

The doping concentration of the conductive dopant in the first semiconductor layer 110 and the second semiconductor layer 150 may be uniform or non-uniform, but is not limited thereto.

When the light emitting device 100 is a horizontal type light emitting diode, a first electrode (not shown) may be disposed in one region of the first semiconductor layer 110. The first electrode (not shown) may be electrically connected to the first semiconductor layer 110. The first electrode (not shown) may transmit an external power source to the first semiconductor layer 110.

When the light emitting device 100 is a horizontal type light emitting diode, a second electrode (not shown) may be disposed in one region of the second semiconductor layer 150. When the light emitting device 100 is a vertical diode, the second electrode (not shown) may be formed of a semiconductor material, but the electrode arrangement of the light emitting device 100 is not limited thereto.

The second electrode (not shown) may be electrically connected to the second semiconductor layer 150. The second electrode (not shown) may provide an external power source to the second semiconductor layer 150.

The first electrode (not shown) and the second electrode (not shown) may be formed of a conductive material such as indium (In), cobalt (Co), silicon (Si), germanium (Ge), gold (Au), palladium ), Platinum (Pt), ruthenium (Ru), rhenium (Re), magnesium (Mg), zinc (Zn), hafnium (Hf), tantalum (Ta), rhodium (Ti), Ag, Cr, Mo, Nb, Al, Ni, Cu, and WTi, Or a multi-layered structure using a metal or an alloy selected from the group consisting of a metal, a metal, and an alloy.

A current injection layer 130 may be disposed between the first semiconductor layer 110 and the active layer 140. The current injection layer 130 may be formed by alternately stacking a plurality of injection well layers 132 and 136 and a plurality of injection barrier layers 134 and 138. The current injection layer 130 may be a superlattice structure.

The energy bandgaps of the injection well layers 132 and 136 may be less than the energy bandgaps of the injection barrier layers 134 and 138. [ The implantation well layers 132 and 136 may have an indium (In) content higher than the indium (In) content of the implantation barrier layers 134 and 138.

The energy bandgap of the injection well layers 132 and 136 may be greater than the well layers 142 and 146 of the active layer 140 and may be less than the barrier layer 144 of the active layer 140.

The current injection layer 130 is formed so that the injection well layer and the injection barrier layer are thin enough to lose the quantum confinement effect so that electrons or holes are spread throughout the current injection layer 130 by the quantum mechanical tunnel effect to form an energy band .

The current injection layer 130 includes an injection well layer having electrons or holes spread over the entire current injection layer 130 and having an energy band gap lower than that of the first semiconductor layer 110, The recombination rate of electrons and holes can be increased.

The current spreading layer 120 may be disposed between the first semiconductor layer 110 and the current injection layer 130. The current spreading layer 120 may include a dispersion well layer 122 and a dispersion barrier layer 124. The current dispersion layer 120 may have a structure in which the dispersion well layer 122 and the dispersion barrier layer 124 are laminated. The current spreading layer 120 may horizontally distribute the electrons supplied from the first semiconductor layer 110.

The thickness h1 of the dispersion well layer 122 may be from 1.5 nm to 50 nm. When the thickness of the dispersion well layer 122 is 1.5 nm or less, it may be difficult to confine electrons quantitatively. When the thickness is 50 nm or more, the crystal quality of the light emitting device may be deteriorated and the light efficiency may be lowered.

The dispersion barrier layer 124 may comprise aluminum indium gallium nitride (Al x In y GaN). The dispersion barrier layer 124 may have an aluminum content x of 0.05 to 0.25.

When the aluminum content x of the dispersion barrier layer 124 is less than 0.05, the energy band gap becomes too small to function as an electron blocking agent in the dispersion well layer 122. When the aluminum content x is 0.25 or more , The electron injection efficiency for supplying electrons to the active layer 140 may be lowered due to excessive energy band gap.

The dispersion barrier layer 124 may have an indium content y ranging from 0.02 to 0.1. When the indium content is less than 0.02, if the indium content is too small, the content of aluminum increases and the compressive stress increases, and the discordant lattice constant mismatch with the first semiconductor layer 110 is increased The stress between the layers can be increased, and when the indium content y is 0.1 or more, the ability to trap electrons in the dispersion well layer 122 may be degraded in accordance with the decrease of the energy band gap.

Dispersing the well layer 122 is indium gallium nitride, indium (In) content of the dispersion z well layer 122 may include (In z GaN) may be 0.01 to 0.06 days. When the indium content z of the dispersion well layer 122 is 0.01 or less, the energy band gap becomes excessively small, and the electron injection efficiency with which electrons are supplied to the active layer 140 may decrease. When z is 0.06 or more, The gap becomes excessively large, it becomes difficult to improve the horizontal distribution of electrons, and it becomes difficult to supply electrons to the wider surface of the active layer 140. [

2 is a view showing an energy band gap of the light emitting device according to the embodiment.

Referring to FIG. 2, the dispersion well layer 122 may have a smaller energy bandgap than the first semiconductor layer 110. The dispersion well layer 122 may have a smaller energy band gap than the dispersion barrier layer 124. The dispersion well layer 122 may have an indium (In) content higher than the first semiconductor layer 110 or the dispersion barrier layer 124.

The dispersion barrier layer 124 may have a larger energy bandgap than the dispersion well layer 122 and the first semiconductor layer 110. The dispersion barrier layer 124 may have an aluminum (Al) content higher than that of the first semiconductor layer 110 or the dispersion barrier layer 124.

The light emitting device of one embodiment may be such that the dispersion barrier layer 124 is in contact with the injection well layer 132. The dispersion barrier layer 124 may cause electrons supplied from the first semiconductor layer 110 to be confined in the dispersion well layer 122.

The energy band gap of the dispersion well layer 122 may be smaller than the energy band gap of the first semiconductor layer 110. Although the dispersion well layer 122 and the dispersion barrier layer 124 are shown as one in FIG. 2, a plurality of the dispersion well layer 122 and the dispersion barrier layer 124 may be alternately stacked.

The dispersion well layer 122 may have a higher indium content than the first semiconductor layer 110 and the dispersion barrier layer 124. The dispersion well layer 122 may have an energy band gap that is greater than an energy band gap of the injection well layers 132 and 136.

3 is a view showing an energy band gap of the light emitting device according to the embodiment.

3, the current spreading layer 120 further includes a dispersion intermediate layer 126 having an energy band gap between the energy band gap of the dispersion well layer 122 and the energy band gap of the dispersion barrier layer 124 .

The dispersion intermediate layer 126 may have the same energy bandgap as the first semiconductor layer 110. The dispersion intermediate layer 126 may be disposed at a portion of the current spreading layer 120 in contact with the current injection layer 130. The dispersion intermediate layer 126 can mitigate the interlayer stress caused by an instantaneous large change in the energy band gap at the interface between the layers.

The dispersion intermediate layer 126 may be disposed in contact with the injection well layer 132. The dispersion intermediate layer 126 may have an energy band gap between the energy band gap of the injection well layer 132 and the energy band gap of the dispersion barrier layer 124. [

The injection well layer 132 may have a smaller energy band gap than the dispersion well layer 122. The current injection layer 130 may be alternately stacked with the injection well layers 132 and 136 and the injection barrier layers 134 and 138.

The injection well layers 132 and 136 may have an energy band gap greater than the well layers 142 and 146 of the active layer 140. The injection barrier layers 134 and 138 may have an energy band gap greater than the barrier layer 144 of the active layer 140.

4 is a view showing energy band gaps of the light emitting device according to the embodiment.

Referring to FIG. 4, a dispersive intermediate layer 128 may be disposed between the dispersion well layer 122 and the dispersion barrier layer 124.

The dispersion intermediate layer 128 can moderate the change of the energy band gap between the dispersion well layer 122 and the dispersion barrier layer 124. The dispersion intermediate layer 128 can mitigate the interlayer stress between the dispersion well layer 122 and the dispersion barrier layer 124. The dispersion intermediate layer 128 may have an indium content between the indium (In) content of the dispersion well layer 122 and the dispersion barrier layer 124.

The number of the dispersion intermediate layers 126 and 128 may be plural. The dispersion interlayer may be disposed between the dispersion well layer 122 and the dispersion barrier layer 124 and may be disposed between the dispersion barrier layer 124 and the injection well layer 132. The dispersion barrier layer 124 may be between the energy band gap of the layer above it and the energy band gap of each layer below it.

5 is a view showing energy band gaps of the light emitting device according to the embodiment.

Referring to FIG. 5, the dispersion intermediate layer 126 may be disposed between the dispersion barrier layer 124 and the current injection layer 130.

And the energy bandgap decreases as the dispersion intermediate layer 126 gets closer to the current injection layer 130. [ As the energy band gap approaches the current injection layer 130, the dispersion intermediate layer 126 may become closer to the energy band gap of the injection well layer 132. The closer to the current injection layer 130 the dispersion intermediate layer 126, the higher the indium (In) content can be.

6 is a graph showing the content of aluminum and indium in the dispersion barrier layer of the light emitting device according to the embodiment.

Referring to FIG. 6, the dispersion barrier layer may comprise aluminum indium gallium nitride (Al x In y GaN). As the content of aluminum in the dispersion barrier layer increases, the energy band gap of the dispersion barrier layer increases and the plane lattice constant decreases. As the indium content of the dispersion barrier layer increases, the energy bandgap decreases and the plane lattice constant increases.

Optimization values considering the proper aluminum and indium contents of the dispersion barrier layer are distributed in the triangle of the graph shown in FIG.

7A is a perspective view showing a light emitting device package 300 including a light emitting device of the embodiment, and FIG. 7B is a sectional view showing a light emitting device package 300 including the light emitting device of the embodiment.

7A and 7B, a light emitting device package 300 according to an embodiment includes a body 310 having a cavity, first and second electrodes 340 and 350 mounted on the body 310, A light emitting device 320 electrically connected to the two electrodes, and an encapsulant 330 formed in the cavity. The encapsulant 330 may include a phosphor (not shown).

The body 310 is made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), liquid crystal polymer (PSG), polyamide 9T ), new geo-isotactic polystyrene (SPS), metal materials, sapphire (Al 2 O 3), beryllium oxide (BeO), is a printed circuit board (PCB, printed circuit board), it may be formed of at least one of ceramic. The body 310 may be formed by injection molding, etching, or the like, but is not limited thereto.

The inner surface of the body 310 may be formed with an inclined surface. The reflection angle of the light emitted from the light emitting device 320 can be changed according to the angle of the inclined surface, and thus the directivity angle of the light emitted to the outside can be adjusted.

The shape of the cavity formed in the body 310 may be circular, square, polygonal, elliptical, or the like, and may have a curved shape, but the present invention is not limited thereto.

The encapsulant 330 may be filled in the cavity and may include a phosphor (not shown). The encapsulant 330 may be formed of transparent silicone, epoxy, and other resin materials. The encapsulant 330 may be formed in such a manner that the encapsulant 330 is filled in the cavity and then cured by ultraviolet rays or heat.

The phosphor (not shown) may be selected according to the wavelength of the light emitted from the light emitting device 320, so that the light emitting device package 300 can realize white light.

The fluorescent material (not shown) included in the encapsulant 330 may be a blue light emitting phosphor, a blue light emitting fluorescent material, a green light emitting fluorescent material, a yellow green light emitting fluorescent material, a yellow light emitting fluorescent material, Fluorescent material, orange light-emitting fluorescent material, and red light-emitting fluorescent material may be applied.

The phosphor (not shown) may be excited by the light having the first light emitted from the light emitting device 320 to generate the second light. For example, when the light emitting element 320 is a blue light emitting diode and the phosphor (not shown) is a yellow phosphor, the yellow phosphor may be excited by blue light to emit yellow light, As the yellow light generated by excitation by blue light is mixed, the light emitting device package 300 can provide white light.

When the light emitting element 320 is a green light emitting diode, the magenta phosphor or the blue and red phosphors (not shown) are mixed. When the light emitting element 320 is a red light emitting diode, a cyan phosphor or a mixture of blue and green phosphors For example.

The phosphor (not shown) may be a known one such as YAG, TAG, sulfide, silicate, aluminate, nitride, carbide, nitridosilicate, borate, fluoride or phosphate.

The first electrode 340 and the second electrode 350 may be mounted on the body 310. The first electrode 340 and the second electrode 350 may be electrically connected to the light emitting device 320 to supply power to the light emitting device 320.

The first electrode 340 and the second electrode 350 are electrically separated from each other and reflect light generated from the light emitting device 320 to increase light efficiency. The first electrode 340 and the second electrode 350 may discharge heat generated from the light emitting device 320 to the outside.

The light emitting device 320 and the first electrode 340 and the second electrode 350 may be formed by wire bonding or the like, ) Method, a flip chip method, or a die bonding method.

The first electrode 340 and the second electrode 350 may be formed of a metal material such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum ), Platinum (Pt), tin (Sn), silver (Ag), phosphorous (P), aluminum (Al), indium (In), palladium (Pd), cobalt ), Hafnium (Hf), ruthenium (Ru), and iron (Fe). The first electrode 340 and the second electrode 350 may have a single-layer structure or a multi-layer structure, but the present invention is not limited thereto.

The light emitting device 320 is mounted on the first electrode 340 and may be a light emitting device that emits light such as red, green, blue, or white, or a UV (Ultra Violet) However, the present invention is not limited thereto. One or more light emitting elements 320 may be mounted.

The light emitting device 320 is applicable to both a horizontal type whose electrical terminals are all formed on the upper surface, a vertical type formed on the upper and lower surfaces, or a flip chip.

The light emitting device package 300 may include a light emitting device.

A light guide plate, a prism sheet, a diffusion sheet, and the like, which are optical members, may be disposed on a light path of the light emitting device package 300.

The light emitting device package 300, the substrate, and the optical member may function as a light unit. Another embodiment may be implemented as a display device, an indicating device, a lighting system including a light emitting device (not shown) or a light emitting device package 300, for example, the lighting system may include a lamp, a streetlight .

FIG. 8A is a perspective view showing an illumination system 400 including a light emitting device according to an embodiment, and FIG. 8B is a cross-sectional view showing a D-D 'cross-section of the illumination system of FIG. 8A.

8B is a cross-sectional view of the illumination system 400 of FIG. 8A cut in the longitudinal direction Z and the height direction X and viewed in the horizontal direction Y. FIG.

8A and 8B, the illumination system 400 may include a body 410, a cover 430 coupled to the body 410, and a finishing cap 450 positioned at opposite ends of the body 410 have.

The light emitting device module 443 is coupled to a lower surface of the body 410. The body 410 is electrically connected to the light emitting device package 444 through the upper surface of the body 410, And may be formed of a metal material having excellent heat dissipation effect, but is not limited thereto.

The light emitting device package 444 includes a light emitting element (not shown).

The light emitting device package 444 may be mounted on the substrate 442 in a multi-color, multi-row manner to form a module. The light emitting device package 444 may be mounted at equal intervals or may be mounted with various spacings as needed. As the substrate 442, MCPCB (Metal Core PCB) or FR4 PCB can be used.

The cover 430 may be formed in a circular shape so as to surround the lower surface of the body 410, but is not limited thereto.

The cover 430 can protect the internal light emitting element module 443 from foreign substances or the like. The cover 430 may include diffusion particles to prevent glare of light generated in the light emitting device package 444 and uniformly emit light to the outside, and may include at least one of an inner surface and an outer surface of the cover 430 A prism pattern or the like may be formed on the surface. Further, the phosphor may be coated on at least one of the inner surface and the outer surface of the cover 430.

The light generated from the light emitting device package 444 is emitted to the outside through the cover 430 so that the cover 430 should have excellent light transmittance and sufficient heat resistance to withstand the heat generated from the light emitting device package 444 The cover 430 may be made of a material including polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), or the like .

The finishing cap 450 is located at both ends of the body 410 and can be used for sealing the power supply unit (not shown). The finishing cap 450 is formed with the power pin 452, so that the lighting system 400 according to the embodiment can be used immediately without a separate device on the terminal from which the conventional fluorescent lamp is removed.

9 is an exploded perspective view of a liquid crystal display device including a light emitting device according to an embodiment.

9, the liquid crystal display 500 may include a liquid crystal display panel 510 and a backlight unit 570 for providing light to the liquid crystal display panel 510 in an edge-light manner.

The liquid crystal display panel 510 can display an image using the light provided from the backlight unit 570. The liquid crystal display panel 510 may include a color filter substrate 512 and a thin film transistor substrate 514 facing each other with a liquid crystal therebetween.

The color filter substrate 512 can realize the color of an image to be displayed through the liquid crystal display panel 510.

The thin film transistor substrate 514 is electrically connected to a printed circuit board 518 on which a plurality of circuit components are mounted via a driving film 517. The thin film transistor substrate 514 may apply a driving voltage provided from the printed circuit board 518 to the liquid crystal in response to a driving signal provided from the printed circuit board 518. [

The thin film transistor substrate 514 may include a thin film transistor and a pixel electrode formed as a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 570 includes a light emitting device module 520 for outputting light, a light guide plate 530 for changing the light provided from the light emitting module 520 into a surface light source to provide the light to the liquid crystal display panel 510, A plurality of films 550, 560, and 564 that uniformly distribute the luminance of light provided from the light guide plate 530 and improve vertical incidence, and a reflective sheet (not shown) that reflects light emitted to the rear of the light guide plate 530 to the light guide plate 530 540).

The light emitting device module 520 may include a PCB substrate 522 to mount a plurality of light emitting device packages 524 and a plurality of light emitting device packages 524 to form a module.

The light emitting device package 524 includes a light emitting element (not shown).

The backlight unit 570 includes a diffusion film 566 for diffusing light incident from the light guide plate 530 toward the liquid crystal display panel 510 and a prism film 550 for enhancing vertical incidence by condensing the diffused light And may include a protective film 564 for protecting the prism film 550.

10 is an exploded perspective view of a liquid crystal display device including a light emitting device according to an embodiment. However, the parts shown and described in Fig. 9 are not repeatedly described in detail.

10 is a direct-view liquid crystal display device 600 according to the embodiment. The liquid crystal display device 600 may include a liquid crystal display panel 610 and a backlight unit 670 for providing light to the liquid crystal display panel 610. Since the liquid crystal display panel 610 is the same as that described with reference to FIG. 9, detailed description is omitted.

The backlight unit 670 includes a plurality of light emitting element modules 623, a reflective sheet 624, a lower chassis 630 in which the light emitting element module 623 and the reflective sheet 624 are accommodated, And a plurality of optical films 660 disposed on the diffuser plate 640.

The light emitting device module 623 may include a PCB substrate 621 to mount a plurality of light emitting device packages 622 and a plurality of light emitting device packages 622 to form a module.

The light emitting device package 622 includes a light emitting element (not shown).

The reflective sheet 624 reflects light generated from the light emitting device package 622 in a direction in which the liquid crystal display panel 610 is positioned, thereby improving light utilization efficiency.

The light emitted from the light emitting element module 623 is incident on the diffusion plate 640 and the optical film 660 is disposed on the diffusion plate 640. The optical film 660 is composed of a diffusion film 666, a prism film 650, and a protective film 664.

The configuration and the method of the embodiments described above are not limitedly applied, but the embodiments may be modified so that all or some of the embodiments are selectively combined so that various modifications can be made. .

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It should be understood that various modifications may be made by those skilled in the art without departing from the spirit and scope of the present invention.

110: first semiconductor layer 120: current dispersion layer
130: current injection layer 140: active layer
150: second semiconductor layer
300: Light emitting device package.

Claims (17)

A first semiconductor layer;
A current injection layer disposed on the first semiconductor layer and including a plurality of injection well layers having a smaller energy band gap than the first semiconductor layer;
An active layer disposed on the current injection layer;
A second semiconductor layer disposed on the active layer; And
A dispersion well layer disposed between the first semiconductor layer and the current injection layer and having an energy band gap smaller than the energy band gap of the first semiconductor layer and an energy band gap larger than the energy band gap of the first semiconductor layer, And a current diffusion layer including a diffusion barrier layer formed on the current diffusion layer. The method according to claim 1,
Wherein the current dispersion layer is formed by alternately laminating the dispersion well layer and the dispersion barrier layer. The method according to claim 1,
Wherein the dispersion well layer has a higher indium content than the first semiconductor layer. The method according to claim 1,
Wherein the dispersion well layer has an energy band gap smaller than an energy band gap of the first semiconductor layer. The method according to claim 1,
Wherein the dispersion well layer has an energy band gap greater than an energy band gap of the injection well layer. The method according to claim 1,
Wherein the injection barrier layer has a larger energy band gap than the first semiconductor layer. The method according to claim 1,
Wherein the current dispersion layer further comprises a dispersion intermediate layer having an energy band gap between an energy band gap of the dispersion well layer and an energy band gap of the dispersion barrier layer. 8. The method of claim 7,
Wherein the dispersion intermediate layer is disposed between the dispersion well layer and the dispersion barrier layer. 8. The method of claim 7,
Wherein the dispersion intermediate layer is disposed between the dispersion barrier layer and the current injection layer. 10. The method of claim 9,
And the energy bandgap decreases as the dispersion intermediate layer approaches the current injection layer. The method according to claim 1,
Wherein the dispersion barrier layer comprises aluminum indium gallium nitride (Al x In y GaN). 12. The method of claim 11,
Wherein the dispersion barrier layer has an aluminum content x of 0.05 to 0.25. 12. The method of claim 11,
Wherein the dispersion barrier layer has an indium content y of 0.02 to 0.1. The method according to claim 1,
Light emitting device of the distribution well layer comprises an indium gallium nitride (In z GaN). 15. The method of claim 14,
And the indium content z of the dispersion well layer is 0.01 to 0.06. The method according to claim 1,
Wherein the dispersion well layer has a thickness of 1.5 nm to 50 nm. The method according to claim 1,
Wherein the dispersion well layer and the dispersion barrier layer are alternately stacked.
KR1020130001177A 2013-01-04 2013-01-04 Light emitting device KR102007273B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020130001177A KR102007273B1 (en) 2013-01-04 2013-01-04 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020130001177A KR102007273B1 (en) 2013-01-04 2013-01-04 Light emitting device

Publications (2)

Publication Number Publication Date
KR20140092958A true KR20140092958A (en) 2014-07-25
KR102007273B1 KR102007273B1 (en) 2019-08-05

Family

ID=51739340

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130001177A KR102007273B1 (en) 2013-01-04 2013-01-04 Light emitting device

Country Status (1)

Country Link
KR (1) KR102007273B1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160019799A (en) * 2014-08-12 2016-02-22 엘지이노텍 주식회사 Light emitting device
KR20160149496A (en) * 2015-06-18 2016-12-28 엘지이노텍 주식회사 Light emitting device and lighting system having the same
CN108352426A (en) * 2015-11-09 2018-07-31 Lg伊诺特有限公司 Luminescence-utraviolet device and light emitting device package

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100691283B1 (en) * 2005-09-23 2007-03-12 삼성전기주식회사 Nitride semiconductor device
KR100716647B1 (en) * 2006-03-21 2007-05-09 서울옵토디바이스주식회사 Light emitting diode with an energy barrier layer for current spreading
KR20080045943A (en) * 2006-11-21 2008-05-26 삼성전기주식회사 Nitride semiconductor light emitting device
KR100924453B1 (en) * 2009-02-06 2009-11-03 갤럭시아포토닉스 주식회사 Light Emitting Diode
KR20120116764A (en) * 2011-04-13 2012-10-23 삼성전자주식회사 Nitride semiconductor light emitting device
KR20120129666A (en) * 2011-05-20 2012-11-28 엘지이노텍 주식회사 Light emitting device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100691283B1 (en) * 2005-09-23 2007-03-12 삼성전기주식회사 Nitride semiconductor device
KR100716647B1 (en) * 2006-03-21 2007-05-09 서울옵토디바이스주식회사 Light emitting diode with an energy barrier layer for current spreading
KR20080045943A (en) * 2006-11-21 2008-05-26 삼성전기주식회사 Nitride semiconductor light emitting device
KR100924453B1 (en) * 2009-02-06 2009-11-03 갤럭시아포토닉스 주식회사 Light Emitting Diode
KR20120116764A (en) * 2011-04-13 2012-10-23 삼성전자주식회사 Nitride semiconductor light emitting device
KR20120129666A (en) * 2011-05-20 2012-11-28 엘지이노텍 주식회사 Light emitting device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160019799A (en) * 2014-08-12 2016-02-22 엘지이노텍 주식회사 Light emitting device
KR20160149496A (en) * 2015-06-18 2016-12-28 엘지이노텍 주식회사 Light emitting device and lighting system having the same
CN108352426A (en) * 2015-11-09 2018-07-31 Lg伊诺特有限公司 Luminescence-utraviolet device and light emitting device package
JP2018534781A (en) * 2015-11-09 2018-11-22 エルジー イノテック カンパニー リミテッド Ultraviolet light emitting device and light emitting device package
EP3376546A4 (en) * 2015-11-09 2019-05-08 LG Innotek Co., Ltd. Ultraviolet light-emitting element and light-emitting element package
US10971648B2 (en) 2015-11-09 2021-04-06 Lg Innotek Co., Ltd. Ultraviolet light-emitting element and light-emitting element package
CN108352426B (en) * 2015-11-09 2021-10-12 苏州乐琻半导体有限公司 Ultraviolet light emitting device and light emitting device package

Also Published As

Publication number Publication date
KR102007273B1 (en) 2019-08-05

Similar Documents

Publication Publication Date Title
KR20120044726A (en) Light-emitting element
KR20140101130A (en) Ltght emitting device
KR102007273B1 (en) Light emitting device
KR20140096652A (en) Light emitting device
KR101843740B1 (en) Light emitting device
KR20130031932A (en) Light emitting device
KR101933443B1 (en) Light emitting device
KR20120052744A (en) Light-emitting device
KR20120088986A (en) Light Emitting device and Light Emitting device Package
KR101865405B1 (en) Light emitting device
KR20140124063A (en) Light emitting device
KR101818753B1 (en) Light emitting device
KR20140090282A (en) Light emitting device
KR102035192B1 (en) Light emitting device
KR101986720B1 (en) Light emitting device
KR20130025452A (en) Light emitting device
KR20140097603A (en) Light emitting device
KR102019745B1 (en) Light emitting device
KR101913712B1 (en) Light emitting diode
KR102053426B1 (en) Light emitting device and light emitting device package having the same
KR20120037772A (en) Light emitting device
KR20130039168A (en) Light emitting device
KR101855064B1 (en) Light emitting device
KR20130013968A (en) Light emitting device
KR101831329B1 (en) Light emitting device

Legal Events

Date Code Title Description
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant