KR20140092474A - Poly crystalline diamond sintered with Ti coated diamond particles and the manufacturing method thereof - Google Patents

Poly crystalline diamond sintered with Ti coated diamond particles and the manufacturing method thereof Download PDF

Info

Publication number
KR20140092474A
KR20140092474A KR1020120157053A KR20120157053A KR20140092474A KR 20140092474 A KR20140092474 A KR 20140092474A KR 1020120157053 A KR1020120157053 A KR 1020120157053A KR 20120157053 A KR20120157053 A KR 20120157053A KR 20140092474 A KR20140092474 A KR 20140092474A
Authority
KR
South Korea
Prior art keywords
sintered body
polycrystalline diamond
diamond powder
diamond
diamond sintered
Prior art date
Application number
KR1020120157053A
Other languages
Korean (ko)
Other versions
KR101443762B1 (en
Inventor
전휘수
박희섭
안보경
Original Assignee
일진다이아몬드(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 일진다이아몬드(주) filed Critical 일진다이아몬드(주)
Priority to KR1020120157053A priority Critical patent/KR101443762B1/en
Priority to PCT/KR2013/010751 priority patent/WO2014104589A1/en
Publication of KR20140092474A publication Critical patent/KR20140092474A/en
Application granted granted Critical
Publication of KR101443762B1 publication Critical patent/KR101443762B1/en

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/25Diamond
    • C01B32/28After-treatment, e.g. purification, irradiation, separation or recovery
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)

Abstract

The present invention relates to a polycrystalline diamond sintered body using a titanium-coated diamond powder and to a method for producing same. More specifically, the polycrystalline diamond sintered body according to the present invention includes a carbide layer; and a polycrystalline diamond layer that is provided on the carbide layer and is formed by sintering a diamond powder coated with a conductive metal. According to the present invention, processability is improved while maintaining the quality of an existing product, and thus the production efficiency of the product itself can be increased while the yield and product reliability are improved.

Description

TECHNICAL FIELD [0001] The present invention relates to a polycrystalline diamond sintered body using titanium-coated diamond powder and a method of manufacturing the polycrystalline diamond sintered body,

The present invention relates to a polycrystalline diamond sintered body using titanium-coated diamond powder and a manufacturing method thereof, and more particularly to a polycrystalline diamond sintered body having improved workability and a method of manufacturing the same.

As the automobile and aviation industry develops, there is a demand for cutting tool materials with high abrasion resistance due to high precision and high efficiency (environment friendly) machining, and the conventional cutting tool materials used in the past are growing as they are being replaced with new materials. Representative materials include polycrystalline diamond sintered bodies (PCD, Polycrystalline Diamond). The polycrystalline diamond sintered body is produced by sintering diamond powder at high temperature and high pressure (HPHT).

Concretely, the polycrystalline diamond sintered body is wet-mixed with a metal binder and is manufactured at a time when bonding between diamond particles is completed under a high temperature and a high pressure and is crystallographically stable. The polycrystalline diamond sintered body thus produced is applied to nonferrous and hard materials.

However, in order to produce such a polycrystalline diamond sintered body with a cutting tool, it is necessary to process (cut) according to a desired standard. A discharge machining method (Wire-EDM) is used for cutting the polycrystalline diamond sintered body. However, electrical conductivity through electrical discharge contributes to the workability by electrical discharge machining as an absolute factor. In the case of polycrystalline diamond sintered bodies, the WC disk used with the diamond layer and the metal binders added to increase the bonding strength are cut. Diamonds that are not conductive can be very difficult to process by electrical discharge machining.

To solve this problem, a method of increasing the conductivity of the polycrystalline diamond sintered body is required. The first method is to reduce the non-conductive diamond content and to increase the content of the metal binder with high conductivity. However, the most important characteristic of the polycrystalline diamond sintered body is adversely affected by the wear resistance. As a second method, there is a method of increasing the amount of cobalt (Co) leached from a WC disk, which is a material to be assembled by reducing the size of diamond particles. However, since the polycrystalline diamond sintered body formed of large particles is used for roughing and the polycrystalline diamond sintered body formed of small particles is used for fine surface roughing, there is a disadvantage that the width of application field is reduced.

The present invention provides a polycrystalline diamond sintered body having a higher conductivity than a conventional polycrystalline diamond sintered body to facilitate electric discharge machining (processability) and a method for manufacturing the same.

The present invention also provides a polycrystalline diamond sintered body having a minimum content of a metal binder and determining the size of particles to be suitable for use, thereby satisfying workability and product quality at the same time.

The polycrystalline diamond sintered body according to the present invention comprises a carbide layer; And a polycrystalline diamond layer formed on the cemented carbide layer and formed by sintering a diamond powder coated with a conductive metal.

The conductive metal may also be titanium (Ti).

Further, the coating film of the conductive metal may be formed to a thickness of 200 to 300 nm.

Also, the coating film formed by the conductive metal may include a titanium carbide (TiC) component.

The polycrystalline diamond layer may further include a metal binder.

Further, the metal binder may be cobalt (Co).

Meanwhile, a method of manufacturing a polycrystalline diamond sintered body according to the present invention includes a first step of preparing a diamond powder; A second step of coating the diamond powder with a conductive metal; A third step of mixing the coated diamond powder; A fourth step of filtering foreign matters from the mixed diamond powder; A fifth step of reducing the metal component in the diamond powder and performing a heat treatment to remove foreign matter; And a sixth step of sintering the heat-treated diamond powder.

In the second step, the conductive metal may be coated by a sputtering method.

Also, in the third step, the diamond powder may be dried at the same time as mixing using a dry mixing method.

Further, in the third step, drying and mixing can be performed by a ball mill using a ball made of tungsten carbide (WC).

According to the present invention, the conductivity of the polycrystalline diamond sintered body is increased to improve the workability in the discharge machining.

Further, according to the present invention, there is an effect that the quality of the product can be maintained by not affecting the content of the metal binder and the particle size of the diamond powder, despite the improvement of the workability.

That is, according to the present invention, the productivity of the product itself can be increased by improving the workability while maintaining the quality of the existing product, and the yield and the reliability of the product can be improved.

1 is a flowchart showing a method of manufacturing a polycrystalline diamond sintered body according to an embodiment of the present invention.
FIG. 2 is a photograph of a diamond powder for preparing a polycrystalline diamond sintered body according to a comparative example by a scanning electron microscope.
FIG. 3 is a photograph of a diamond powder for producing the polycrystalline diamond sintered body according to the present embodiment by a scanning electron microscope.
4 is a graph showing the results of XRD peaks of a diamond powder for producing the polycrystalline diamond sintered body according to the present embodiment.
5 is a graph showing the results of XRD peaks of the polycrystalline diamond sintered body according to this embodiment and the polycrystalline diamond sintered body according to the comparative example.
6 is a photograph of each component of the polycrystalline diamond sintered body according to a comparative example by scanning electron microscope (SEM).
7 is a photograph of each component of the polycrystalline diamond sintered body according to this embodiment by scanning electron microscope (SEM).
8 is a photograph showing the state of the cutting face according to the electric discharge machining of the polycrystalline diamond sintered body according to the comparative example.
Fig. 9 is a photograph showing the state of the cut surface according to the electric discharge machining of the polycrystalline diamond sintered body according to the present embodiment.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the absence of special definitions or references, the terms used in this description are based on the conditions indicated in the drawings. The same reference numerals denote the same members throughout the embodiments.

The polycrystalline diamond sintered body is manufactured by sintering diamond powder and a metal binder on a carbide substrate. The polycrystalline diamond sintered body according to the present invention comprises

There is a difference in that the surface of the diamond powder used for sintering is coated with a conductive metal as compared with a general polycrystalline diamond sintered body.

As such a conductive metal, titanium (Ti) may be used. Titanium metal is ferromagnetic and is one of the very hard materials. Although it may be made of PCD using other metal materials, it may adversely affect abrasion resistance characteristic of polycrystalline diamond sintered body. TiC is formed through the combination of diamond and Ti. TiC is harder than C (diamond) but has superior electrical conductivity and hardness than cobalt (Co), which is mainly used as a metal binder.

That is, although titanium is used as the conductive metal in this embodiment, the present invention is not limited thereto. As a ferromagnetic metal with a good wettability with the diamond, it can be used for coating diamond instead of titanium. The ferromagnetic metal (substitute metal) includes Fe, Ni, Co, Ti, Al, Ag, Au, Mo, and Nb. However, since the above-mentioned elements are relatively wettable with diamond, can not be produced as a target, or react with diamond at a high temperature, the performance of the product deteriorates or the composition of the product deteriorates compared with titanium.

Hereinafter, a method of manufacturing the polycrystalline diamond sintered body according to the present embodiment will be described with reference to FIG.

First, a diamond powder is prepared to produce the polycrystalline diamond sintered body according to this embodiment (S10). That is, the particle size of the diamond powder is selected according to the purpose or use of the product, and the diamond powder according to the selected particle size is prepared.

Next, the prepared diamond powder is coated with a conductive metal (S20). At this time, titanium (Ti) is used as the conductive metal as described above. The titanium is coated on the diamond powder by a sputtering method. At this time, it is preferable that the titanium coating film is formed to have a thickness of 200 to 300 nm. When a coating film having a thickness of 200 nm or less is formed, it is difficult to obtain sufficient conductivity as desired. When a coating film having a thickness of 300 nm or more is formed, the production of the product is deteriorated due to the problem of sintering.

The coated diamond powder is then mixed (S30). In the case of using a wet ball mill method as in the production of a general polycrystalline diamond sintered body, the coated titanium may be damaged or peeled off. Therefore, in this embodiment, coated diamond powder is mixed using a dry ball mill method. At this time, mixing is carried out at 45 rpm for 3 hours, and a ball mill is performed using a ball made of tungsten carbide (WC).

On the other hand, such a dry mixing method accompanies an additional effect. That is, since the diamond powder is dried during dry mixing, there is no need to carry out a separate drying operation or a process.

The mixed and dried diamond powder is subjected to a filtering operation to remove foreign matter (S40). The material to be filtered may include debris or other foreign matter of tungsten carbide added during the mixing process. In this embodiment, sieving is performed using a sieve having a size of 45 mu m.

Next, the diamond powder from which the foreign substance is removed is heat-treated (S50). Through the heat treatment step, the metal component contained in the coating layer of the diamond powder is reduced and other foreign substances are removed. In the heat treatment step, heat treatment is performed in a vacuum / hydrogen atmosphere at 800 ° and 1.5 hr.

Next, as a preliminary step for sintering, the heat-treated diamond powder is assembled according to the desired shape (S60). Subsequently, the assembled diamond powder is sintered (S70) to form a polycrystalline diamond sintered body. Sintering is about 1500? And 5Gpa. The sintered polycrystalline diamond powder is completed through a polishing process.

Referring to FIGS. 2 to 4, it is confirmed whether or not a titanium coating layer is formed on the diamond powder by the above manufacturing method. FIG. 2 is a photograph of a diamond powder for producing a polycrystalline diamond sintered body according to a comparative example by a scanning electron microscope, FIG. 3 is a photograph of a diamond powder for preparing a polycrystalline diamond sintered body according to the present embodiment, And FIG. 4 is a graph showing the results of XRD peaks of the diamond powder for producing the polycrystalline diamond sintered body according to the present embodiment.

The titanium-coated diamond powder has a darker color as shown in FIGS. 2 and 3. Titanium-coated diamond powder is considered to be darker in color because no charging occurs. Therefore, as shown in FIG. 3, it is considered that the conductivity of the titanium-coated diamond powder not charging is better.

On the other hand, as shown in FIG. 4, it can be seen that titanium carbide (TiC) is included in the XRD peaks of the titanium-coated diamond powder. Titanium carbide (TiC) is a substance generated by bonding of titanium and diamond, and it can be confirmed that a coating film containing tungsten in diamond powder is formed.

The components of the polycrystalline diamond sintered body according to this embodiment and the polycrystalline diamond sintered body according to the comparative example are compared with reference to FIGS. 5 to 7. FIG. 5 is a graph showing the results of XRD peaks of the polycrystalline diamond sintered body according to the present embodiment and the polycrystalline diamond sintered body according to the comparative example, and FIG. 6 is a graph showing the XRD peaks of the respective components of the polycrystalline diamond sintered body according to the comparative example by scanning electron microscope (SEM) 7 is a photograph of each component of the polycrystalline diamond sintered body according to this embodiment by a scanning electron microscope (SEM).

As shown in FIG. 5, the titanium carbide (TiC) component is also confirmed in the polycrystalline diamond sintered body manufactured at high temperature and high pressure by using the diamond powder coated with titanium. As described above, titanium is combined with diamond to form titanium carbide. Therefore, unlike the comparative example, the polycrystalline diamond sintered body according to the present embodiment can confirm the presence of titanium carbide through XRD, thereby confirming the existence of a coating layer in which titanium and diamond are bonded.

This can be confirmed from the scanning electron microscope photographs of FIGS. 6 and 7. FIG. As shown in FIG. 6, in the case of the polycrystalline diamond sintered body without the metal coating, the Ti component was not confirmed. However, in the case of the titanium-coated polycrystalline diamond sintered body as shown in FIG. 7, ) Component forms a bonding structure.

8 and 9, comparative experiments and results of the polycrystalline diamond sintered body according to this embodiment and the polycrystalline diamond sintered body according to the comparative example will be described. Fig. 8 is a photograph showing the state of the cutting face according to the electric discharge machining of the polycrystalline diamond sintered body according to the comparative example, and Fig. 9 is a photograph showing the state of the cutting face according to the electric discharge machining of the polycrystalline diamond sintered body according to this embodiment.

For the comparative experiment of cutting machining, a polycrystalline diamond sintered body according to this embodiment was prepared. In the case of the polycrystalline diamond sintered body according to the comparative example, the same method was used except for the metal coating. It was confirmed that the polycrystalline diamond sintered body according to this example had a coating film formed by the XRD peak described above.

First, the electrical resistance was measured through a DMM (Digital Multi Meter) tool. A DMM is a machine that can measure the electrical resistance of an object. Since the electrical resistance is the reciprocal of the conductivity (electrical conductivity), it can be expected that the lower the measured value, the better the conductivity. The electrical resistance values of the polycrystalline diamond sintered bodies according to the examples and the comparative examples were measured at intervals of 1 cm, respectively. As a result, the resistance of 2.6 Ω was measured in the examples and 4.1 Ω in the comparative examples. As a result, it can be seen that the conductivity of the polycrystalline diamond sintered body according to the present embodiment is improved as compared with the comparative example.

Next, discharge processing experiments were performed. The EDM-wire equipment was used for the EDM experiments. The results of the EDM-wire tests are shown in Table 1 below.

[Table 1]

Figure pat00001

As shown in Table 1 above, the cutting speeds of Examples are from 2.30 to 2.34 mm per minute, and in the case of Comparative Examples, the cutting speed is 2.15 to 2.17 mm per minute. That is, as described above, the electric conductivity is improved in the embodiment, as compared with the comparative example, so that the cutting speed is improved.

On the other hand, in the comparative example, it was measured that the direct damage zone was 19.15 μm and the indirect damage zone was 200 μm. On the other hand, in the case of the embodiment, the direct daisy zone is 17.66 μm and the indirect damage zone is measured as 175 μm. As can be seen from FIGS. 8 and 9, in the case of the embodiment, the damage on the cut surface is reduced even though the cutting speed is fast due to the electric discharge machining.

That is, in the case of the polycrystalline diamond sintered body according to the present invention as described above, the electric conductivity is improved, so that the cutting speed according to the electric discharge machining is improved and the quality of the cut surface is improved. The cutting speed and the quality of the cut surface are improved, so that the production speed, yield and quality of the product are improved.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but many variations and modifications may be made without departing from the scope of the present invention as defined in the appended claims. And can be realized by the manufacturing method thereof.

Claims (10)

Carbide layer; And
And a polycrystalline diamond layer formed on the cemented carbide layer and formed by sintering a diamond powder coated with a conductive metal.
The method according to claim 1,
Wherein the conductive metal is titanium (Ti).
3. The method of claim 2,
Wherein the coating film of the conductive metal is formed to a thickness of 200 to 300 nm.
3. The method of claim 2,
Wherein the coating film formed by the conductive metal comprises a titanium carbide (TiC) component.
The method according to claim 1,
Wherein the polycrystalline diamond layer further comprises a metal binder.
6. The method of claim 5,
Wherein the metal binder is cobalt (Co).
A first step of producing a diamond powder;
A second step of coating the diamond powder with a conductive metal;
A third step of mixing the coated diamond powder;
A fourth step of filtering foreign matters from the mixed diamond powder;
A fifth step of reducing the metal component in the diamond powder and performing a heat treatment to remove foreign matter; And
And a sixth step of sintering the heat-treated diamond powder.
8. The method of claim 7,
Wherein the conductive metal is coated by a sputtering method in the second step.
8. The method of claim 7,
Wherein the diamond powder is simultaneously mixed with the diamond powder by dry mixing in the third step.
10. The method of claim 9,
In the third step, drying and mixing are performed by a ball mill using a ball made of tungsten carbide (WC).
KR1020120157053A 2012-12-28 2012-12-28 Poly crystalline diamond sintered with Ti coated diamond particles and the manufacturing method thereof KR101443762B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020120157053A KR101443762B1 (en) 2012-12-28 2012-12-28 Poly crystalline diamond sintered with Ti coated diamond particles and the manufacturing method thereof
PCT/KR2013/010751 WO2014104589A1 (en) 2012-12-28 2013-11-26 Multi-crystal diamond sintered body using titanium coated diamond powder, and method for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120157053A KR101443762B1 (en) 2012-12-28 2012-12-28 Poly crystalline diamond sintered with Ti coated diamond particles and the manufacturing method thereof

Publications (2)

Publication Number Publication Date
KR20140092474A true KR20140092474A (en) 2014-07-24
KR101443762B1 KR101443762B1 (en) 2014-09-30

Family

ID=51021588

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120157053A KR101443762B1 (en) 2012-12-28 2012-12-28 Poly crystalline diamond sintered with Ti coated diamond particles and the manufacturing method thereof

Country Status (2)

Country Link
KR (1) KR101443762B1 (en)
WO (1) WO2014104589A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116375024A (en) * 2023-03-20 2023-07-04 昆明理工大学 Preparation method of titanium oxide coated diamond powder

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3718876B2 (en) * 1995-06-23 2005-11-24 株式会社アライドマテリアル Ultra-hard film-coated member and manufacturing method thereof
KR100568971B1 (en) 2004-01-13 2006-04-07 일진다이아몬드(주) Method of sintering body having high hardness
US20070056778A1 (en) 2005-09-15 2007-03-15 Steven Webb Sintered polycrystalline diamond material with extremely fine microstructures
WO2008096314A2 (en) * 2007-02-05 2008-08-14 Element Six (Production) (Pty) Ltd Polycrystalline diamond (pcd) materials
JP5391540B2 (en) * 2007-10-05 2014-01-15 三菱マテリアル株式会社 Multi-layered diamond-based sintered body with both conductive layer region and non-conductive layer region
KR101151809B1 (en) * 2010-02-05 2012-06-01 신한다이아몬드공업 주식회사 Manufacturing method of diamond-tool using the diamond-hard metal composite powder

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116375024A (en) * 2023-03-20 2023-07-04 昆明理工大学 Preparation method of titanium oxide coated diamond powder

Also Published As

Publication number Publication date
WO2014104589A1 (en) 2014-07-03
KR101443762B1 (en) 2014-09-30

Similar Documents

Publication Publication Date Title
JP6703757B2 (en) Cermet and cutting tool
JP6796266B2 (en) Cemented carbide and cutting tools
JP5810469B2 (en) Cemented carbide and method for producing cemented carbide
US20090307987A1 (en) Abrasive compacts
GB2552408B (en) Sintered polycrystalline cubic boron nitride material
US20190184524A1 (en) Polycrystalline diamond construction & method of making
CN108115142A (en) Diamond compact and preparation method thereof
WO2015080237A1 (en) Diamond-coated cemented carbide cutting tool, and method for producing same
JP2017088917A (en) Hard metal alloy and cutting tool
CN108145168A (en) Fine-granularity diamond composite sheet and preparation method thereof
JP6213935B1 (en) Manufacturing method of fine free carbon dispersion type cemented carbide and coated cemented carbide
KR101443762B1 (en) Poly crystalline diamond sintered with Ti coated diamond particles and the manufacturing method thereof
JP2015081382A (en) Hard alloy, micro-drill and method of producing hard alloy
KR20160084434A (en) Sputtering target comprising tungsten carbide or titanium carbide
CN110823656A (en) Preparation method of tungsten carbide mosaic sample
JP2016041853A (en) Cemented carbide, micro-drill and method for producing cemented carbide
JP2008018479A (en) Cutting whetstone
CN109158718B (en) Method for producing electrode tip, tool electrode, and method for producing tool electrode
JP5566189B2 (en) Thin blade
KR102009687B1 (en) Cutting tools coated with hard film
JP5257793B2 (en) Drill and its manufacturing method
JP2004232000A (en) Cemented carbide and manufacturing method, and rotary tool using the cemented carbide
CN112720285B (en) Method for manufacturing diamond grinding tool
JP2010105060A (en) Super abrasive grain wheel and discharge truing method or truing-dressing method for super abrasive grain wheel
KR940010456B1 (en) Sputtering target and production thereof

Legal Events

Date Code Title Description
E601 Decision to refuse application
AMND Amendment
X701 Decision to grant (after re-examination)
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20170703

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20180702

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20190701

Year of fee payment: 6