KR20140078748A - 균일한 플라즈마를 생성하기 위해 프로파일링된 전자 빔 추출 격자를 구비한 전자 빔 플라즈마 소스 - Google Patents
균일한 플라즈마를 생성하기 위해 프로파일링된 전자 빔 추출 격자를 구비한 전자 빔 플라즈마 소스 Download PDFInfo
- Publication number
- KR20140078748A KR20140078748A KR1020147013087A KR20147013087A KR20140078748A KR 20140078748 A KR20140078748 A KR 20140078748A KR 1020147013087 A KR1020147013087 A KR 1020147013087A KR 20147013087 A KR20147013087 A KR 20147013087A KR 20140078748 A KR20140078748 A KR 20140078748A
- Authority
- KR
- South Korea
- Prior art keywords
- grating
- profiled
- electron beam
- chamber
- plasma reactor
- Prior art date
Links
- 238000000605 extraction Methods 0.000 title claims abstract description 69
- 238000010894 electron beam technology Methods 0.000 claims abstract description 66
- 238000009826 distribution Methods 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 23
- 230000001133 acceleration Effects 0.000 claims description 20
- 238000009828 non-uniform distribution Methods 0.000 claims description 15
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 5
- 230000000295 complement effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32321—Discharge generated by other radiation
- H01J37/3233—Discharge generated by other radiation using charged particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06325—Cold-cathode sources
- H01J2237/06366—Gas discharge electron sources
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161549346P | 2011-10-20 | 2011-10-20 | |
US61/549,346 | 2011-10-20 | ||
US13/595,252 | 2012-08-27 | ||
US13/595,252 US20130098552A1 (en) | 2011-10-20 | 2012-08-27 | E-beam plasma source with profiled e-beam extraction grid for uniform plasma generation |
PCT/US2012/060018 WO2013059093A1 (en) | 2011-10-20 | 2012-10-12 | E-beam plasma source with profiled e-beam extraction grid for uniform plasma generation |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20140078748A true KR20140078748A (ko) | 2014-06-25 |
Family
ID=48135003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020147013087A KR20140078748A (ko) | 2011-10-20 | 2012-10-12 | 균일한 플라즈마를 생성하기 위해 프로파일링된 전자 빔 추출 격자를 구비한 전자 빔 플라즈마 소스 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20130098552A1 (zh) |
KR (1) | KR20140078748A (zh) |
CN (1) | CN103748970A (zh) |
TW (1) | TW201320145A (zh) |
WO (1) | WO2013059093A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9443700B2 (en) * | 2013-03-12 | 2016-09-13 | Applied Materials, Inc. | Electron beam plasma source with segmented suppression electrode for uniform plasma generation |
US20140356768A1 (en) * | 2013-05-29 | 2014-12-04 | Banqiu Wu | Charged beam plasma apparatus for photomask manufacture applications |
US10510625B2 (en) * | 2015-11-17 | 2019-12-17 | Lam Research Corporation | Systems and methods for controlling plasma instability in semiconductor fabrication |
CN108987228B (zh) * | 2017-06-02 | 2024-05-17 | 北京北方华创微电子装备有限公司 | 用于处理工件的等离子体反应装置 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3803355A1 (de) * | 1988-02-05 | 1989-08-17 | Leybold Ag | Teilchenquelle fuer eine reaktive ionenstrahlaetz- oder plasmadepositionsanlage |
US5003178A (en) * | 1988-11-14 | 1991-03-26 | Electron Vision Corporation | Large-area uniform electron source |
US5369953A (en) * | 1993-05-21 | 1994-12-06 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Three-grid accelerator system for an ion propulsion engine |
JP2868120B2 (ja) * | 1997-06-11 | 1999-03-10 | 川崎重工業株式会社 | 電子ビーム励起プラズマ発生装置 |
US5874807A (en) * | 1997-08-27 | 1999-02-23 | The United States Of America As Represented By The Secretary Of The Navy | Large area plasma processing system (LAPPS) |
JP2970654B1 (ja) * | 1998-05-22 | 1999-11-02 | 日新電機株式会社 | 薄膜形成装置 |
JP2991192B1 (ja) * | 1998-07-23 | 1999-12-20 | 日本電気株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP2001085414A (ja) * | 1999-09-17 | 2001-03-30 | Matsushita Electric Ind Co Ltd | プラズマ処理装置およびプラズマ処理方法 |
US6407399B1 (en) * | 1999-09-30 | 2002-06-18 | Electron Vision Corporation | Uniformity correction for large area electron source |
JP2004207314A (ja) * | 2002-12-24 | 2004-07-22 | Tokyo Electron Ltd | 膜改質の終点検出方法、その終点検出装置及び電子ビーム処理装置 |
US6914014B2 (en) * | 2003-01-13 | 2005-07-05 | Applied Materials, Inc. | Method for curing low dielectric constant film using direct current bias |
KR20050008065A (ko) * | 2003-07-14 | 2005-01-21 | 삼성전자주식회사 | 고밀도 플라즈마 반응기 |
US7909961B2 (en) * | 2006-10-30 | 2011-03-22 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
US20080178805A1 (en) * | 2006-12-05 | 2008-07-31 | Applied Materials, Inc. | Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode |
KR20080063988A (ko) * | 2007-01-03 | 2008-07-08 | 삼성전자주식회사 | 중성빔을 이용한 식각장치 |
US7863587B2 (en) * | 2007-01-31 | 2011-01-04 | Hitachi Global Storage Technologies, Netherlands, B.V. | Symmetrical shaper for an ion beam deposition and etching apparatus |
KR101358779B1 (ko) * | 2007-07-19 | 2014-02-04 | 주식회사 뉴파워 프라즈마 | 멀티 코어 플라즈마 발생 플레이트를 구비한 플라즈마반응기 |
US9997325B2 (en) * | 2008-07-17 | 2018-06-12 | Verity Instruments, Inc. | Electron beam exciter for use in chemical analysis in processing systems |
-
2012
- 2012-08-27 US US13/595,252 patent/US20130098552A1/en not_active Abandoned
- 2012-10-12 KR KR1020147013087A patent/KR20140078748A/ko not_active Application Discontinuation
- 2012-10-12 CN CN201280041424.1A patent/CN103748970A/zh active Pending
- 2012-10-12 WO PCT/US2012/060018 patent/WO2013059093A1/en active Application Filing
- 2012-10-18 TW TW101138450A patent/TW201320145A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20130098552A1 (en) | 2013-04-25 |
CN103748970A (zh) | 2014-04-23 |
TW201320145A (zh) | 2013-05-16 |
WO2013059093A1 (en) | 2013-04-25 |
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