KR20140078748A - 균일한 플라즈마를 생성하기 위해 프로파일링된 전자 빔 추출 격자를 구비한 전자 빔 플라즈마 소스 - Google Patents

균일한 플라즈마를 생성하기 위해 프로파일링된 전자 빔 추출 격자를 구비한 전자 빔 플라즈마 소스 Download PDF

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Publication number
KR20140078748A
KR20140078748A KR1020147013087A KR20147013087A KR20140078748A KR 20140078748 A KR20140078748 A KR 20140078748A KR 1020147013087 A KR1020147013087 A KR 1020147013087A KR 20147013087 A KR20147013087 A KR 20147013087A KR 20140078748 A KR20140078748 A KR 20140078748A
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South Korea
Prior art keywords
grating
profiled
electron beam
chamber
plasma reactor
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KR1020147013087A
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English (en)
Korean (ko)
Inventor
레오니드 도르프
샤히드 라우프
케니스 에스. 콜린스
니푼 미스라
제임스 디. 칼두치
개리 리레이
카르틱 라마스와미
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20140078748A publication Critical patent/KR20140078748A/ko

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321Discharge generated by other radiation
    • H01J37/3233Discharge generated by other radiation using charged particles
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/063Electron sources
    • H01J2237/06325Cold-cathode sources
    • H01J2237/06366Gas discharge electron sources

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020147013087A 2011-10-20 2012-10-12 균일한 플라즈마를 생성하기 위해 프로파일링된 전자 빔 추출 격자를 구비한 전자 빔 플라즈마 소스 KR20140078748A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161549346P 2011-10-20 2011-10-20
US61/549,346 2011-10-20
US13/595,252 2012-08-27
US13/595,252 US20130098552A1 (en) 2011-10-20 2012-08-27 E-beam plasma source with profiled e-beam extraction grid for uniform plasma generation
PCT/US2012/060018 WO2013059093A1 (en) 2011-10-20 2012-10-12 E-beam plasma source with profiled e-beam extraction grid for uniform plasma generation

Publications (1)

Publication Number Publication Date
KR20140078748A true KR20140078748A (ko) 2014-06-25

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147013087A KR20140078748A (ko) 2011-10-20 2012-10-12 균일한 플라즈마를 생성하기 위해 프로파일링된 전자 빔 추출 격자를 구비한 전자 빔 플라즈마 소스

Country Status (5)

Country Link
US (1) US20130098552A1 (zh)
KR (1) KR20140078748A (zh)
CN (1) CN103748970A (zh)
TW (1) TW201320145A (zh)
WO (1) WO2013059093A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9443700B2 (en) * 2013-03-12 2016-09-13 Applied Materials, Inc. Electron beam plasma source with segmented suppression electrode for uniform plasma generation
US20140356768A1 (en) * 2013-05-29 2014-12-04 Banqiu Wu Charged beam plasma apparatus for photomask manufacture applications
US10510625B2 (en) * 2015-11-17 2019-12-17 Lam Research Corporation Systems and methods for controlling plasma instability in semiconductor fabrication
CN108987228B (zh) * 2017-06-02 2024-05-17 北京北方华创微电子装备有限公司 用于处理工件的等离子体反应装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3803355A1 (de) * 1988-02-05 1989-08-17 Leybold Ag Teilchenquelle fuer eine reaktive ionenstrahlaetz- oder plasmadepositionsanlage
US5003178A (en) * 1988-11-14 1991-03-26 Electron Vision Corporation Large-area uniform electron source
US5369953A (en) * 1993-05-21 1994-12-06 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Three-grid accelerator system for an ion propulsion engine
JP2868120B2 (ja) * 1997-06-11 1999-03-10 川崎重工業株式会社 電子ビーム励起プラズマ発生装置
US5874807A (en) * 1997-08-27 1999-02-23 The United States Of America As Represented By The Secretary Of The Navy Large area plasma processing system (LAPPS)
JP2970654B1 (ja) * 1998-05-22 1999-11-02 日新電機株式会社 薄膜形成装置
JP2991192B1 (ja) * 1998-07-23 1999-12-20 日本電気株式会社 プラズマ処理方法及びプラズマ処理装置
JP2001085414A (ja) * 1999-09-17 2001-03-30 Matsushita Electric Ind Co Ltd プラズマ処理装置およびプラズマ処理方法
US6407399B1 (en) * 1999-09-30 2002-06-18 Electron Vision Corporation Uniformity correction for large area electron source
JP2004207314A (ja) * 2002-12-24 2004-07-22 Tokyo Electron Ltd 膜改質の終点検出方法、その終点検出装置及び電子ビーム処理装置
US6914014B2 (en) * 2003-01-13 2005-07-05 Applied Materials, Inc. Method for curing low dielectric constant film using direct current bias
KR20050008065A (ko) * 2003-07-14 2005-01-21 삼성전자주식회사 고밀도 플라즈마 반응기
US7909961B2 (en) * 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US20080178805A1 (en) * 2006-12-05 2008-07-31 Applied Materials, Inc. Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode
KR20080063988A (ko) * 2007-01-03 2008-07-08 삼성전자주식회사 중성빔을 이용한 식각장치
US7863587B2 (en) * 2007-01-31 2011-01-04 Hitachi Global Storage Technologies, Netherlands, B.V. Symmetrical shaper for an ion beam deposition and etching apparatus
KR101358779B1 (ko) * 2007-07-19 2014-02-04 주식회사 뉴파워 프라즈마 멀티 코어 플라즈마 발생 플레이트를 구비한 플라즈마반응기
US9997325B2 (en) * 2008-07-17 2018-06-12 Verity Instruments, Inc. Electron beam exciter for use in chemical analysis in processing systems

Also Published As

Publication number Publication date
US20130098552A1 (en) 2013-04-25
CN103748970A (zh) 2014-04-23
TW201320145A (zh) 2013-05-16
WO2013059093A1 (en) 2013-04-25

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