KR20140062982A - 쿨링 장치가 장착된 증착 물질 센싱 가이드 튜브 - Google Patents
쿨링 장치가 장착된 증착 물질 센싱 가이드 튜브 Download PDFInfo
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- KR20140062982A KR20140062982A KR1020120129356A KR20120129356A KR20140062982A KR 20140062982 A KR20140062982 A KR 20140062982A KR 1020120129356 A KR1020120129356 A KR 1020120129356A KR 20120129356 A KR20120129356 A KR 20120129356A KR 20140062982 A KR20140062982 A KR 20140062982A
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- guide tube
- quartz crystal
- deposition
- tube
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/52—Means for observation of the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
- H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
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- Mechanical Engineering (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
도 2는 자켓(Jacket)타입의 쿨링 장치에 가이드 튜브가 삽입되어 있는 것에 대한 사시도를 도시한다.
도 3은 분배기의 일 측면에 설치되는 쿨링 장치가 장착된 증착 물질 센싱 가이드 튜브에 대한 개념도를 도시한다.
도 4는 분배기의 일 측면에 설치되는 쿨링 장치가 장착된 증착 물질 센싱 가이드 튜브에 대한 개념도를 도시한다.
도 5는 진공 챔버(Chamber)내에 쿨링 장치가 장착된 증착 물질 센싱 가이드 튜브에 대한 개념도를 도시한다.
도 6은 증착 물질 센싱 가이드에 쿨링 장치를 장착하지 않고 모니터링을 한 데이터를 나타낸다.
도 7은 증착 물질 센싱 가이드에 쿨링 장치를 장착한 후 모니터링을 한 데이터를 나타낸다.
120: 체결 튜브 130: 냉각수 진출입관
140: 증착 두께 탐지 센서 부 150: 석영 크리스탈
Claims (7)
- 증착기판(Substrate)에 증착되는 증착 막의 두께 및 질량을 측정하는 석영 크리스탈(Quartz crystal)을 구비한 증착 두께 탐지 센서(Deposition Rate Detecting Sensor)부;
유기 물질의 소스로부터 증발되는 증발 물질을 상기 석영 크리스탈로 유도하는 가이드 튜브; 및
상기 가이트 튜브의 외주 연에 설치되어 상기 가이드 튜브를 냉각수로 냉각하는 쿨링(Cooling)장치로 구성되는 것을 특징으로 하는 쿨링 장치가 장착된 증착 물질 센싱 가이드 튜브. - 제1항에 있어서,
상기 가이드 튜브는
원통형 가이드 튜브와 체결 튜브로 구성되는 것을 특징으로 하는 쿨링 장치가 장착된 증착 물질 센싱 가이드 튜브. - 제2항에 있어서,
상기 가이드 튜브의 길이는,
50mm 내지 300mm인 것을 특징으로 하는 쿨링 장치가 장착된 증착 물질 센싱 가이드 튜브. - 제3항에 있어서,
상기 가이드 튜브의 직경는,
15mm 내지 60mm인 것을 특징으로 하는 쿨링 장치가 장착된 증착 물질 센싱 가이드 튜브. - 제1항에 있어서,
상기 쿨링 장치는
튜브(Tube)타입 및 자켓(Jacket)타입 중 어느 하나의 타입인 것을 특징으로 하는 쿨링 장치가 장착된 증착 물질 센싱 가이드 튜브. - 제5항에 있어서,
상기 쿨링 장치가 상기 튜브 타입인 경우,
상기 가이드 튜브에 등 간격으로 감겨 있는 것을 특징으로 하는 쿨링 장치가 장착된 증착 물질 센싱 가이드 튜브. - 제5항에 있어서,
상기 쿨링 장치가 상기 자켓 타입인 경우,
원통형 가이드 튜브의 직경에 1.5배 내지 2.0배인 것을 특징으로 하는 쿨링 장치가 장착된 증착 물질 센싱 가이드 튜브.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020120129356A KR20140062982A (ko) | 2012-11-15 | 2012-11-15 | 쿨링 장치가 장착된 증착 물질 센싱 가이드 튜브 |
Applications Claiming Priority (1)
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KR1020120129356A KR20140062982A (ko) | 2012-11-15 | 2012-11-15 | 쿨링 장치가 장착된 증착 물질 센싱 가이드 튜브 |
Publications (1)
Publication Number | Publication Date |
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KR20140062982A true KR20140062982A (ko) | 2014-05-27 |
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KR1020120129356A Ceased KR20140062982A (ko) | 2012-11-15 | 2012-11-15 | 쿨링 장치가 장착된 증착 물질 센싱 가이드 튜브 |
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KR (1) | KR20140062982A (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200054778A (ko) | 2018-11-12 | 2020-05-20 | 주식회사 선익시스템 | 증착량 측정이 용이한 선형 증발원 및 이를 포함하는 증착 장치 |
-
2012
- 2012-11-15 KR KR1020120129356A patent/KR20140062982A/ko not_active Ceased
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200054778A (ko) | 2018-11-12 | 2020-05-20 | 주식회사 선익시스템 | 증착량 측정이 용이한 선형 증발원 및 이를 포함하는 증착 장치 |
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