KR20140049730A - Ag alloy wire for semiconductor package - Google Patents

Ag alloy wire for semiconductor package Download PDF

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Publication number
KR20140049730A
KR20140049730A KR20120115898A KR20120115898A KR20140049730A KR 20140049730 A KR20140049730 A KR 20140049730A KR 20120115898 A KR20120115898 A KR 20120115898A KR 20120115898 A KR20120115898 A KR 20120115898A KR 20140049730 A KR20140049730 A KR 20140049730A
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South Korea
Prior art keywords
wire
gold
bonding
palladium
silver
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KR20120115898A
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Korean (ko)
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KR101441551B1 (en
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조동철
박중규
김재균
이민철
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희성금속 주식회사
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Publication of KR20140049730A publication Critical patent/KR20140049730A/en
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Publication of KR101441551B1 publication Critical patent/KR101441551B1/en

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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
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Abstract

Ag alloy-wire for a semiconductor package, according to the present invention, is capable of providing excellent boding properties and reliability. The present invention includes 0.1-5% by weight of respective Au, Pd, and Pt as a first additive components. A second additive component is comprised of more than one kind selected from Ca, Be, La, Ce, and Y, and contains 5-50ppm by weight. The rest is made of Ag.

Description

반도체 패키지용 은합금 와이어{Ag alloy wire for semiconductor package}The present invention relates to a silver alloy wire for a semiconductor package,

본 발명은 반도체 패키지용 본딩와이어로 Ag-Au-Pd-Pt 4원합금계로 이루어진 은합금 와이어에 관한 것이다.The present invention relates to a silver alloy wire made of Ag-Au-Pd-Pt quartz alloy as a bonding wire for a semiconductor package.

일반적으로 반도체패키지용 본딩와이어는 고순도의 금(Au), 알루미늄(Al) 또는 구리(Cu), 은(Ag)으로 만들어져, 반도체 다이와 섭스트레이트(리드프레임, 인쇄회로기판, 써킷 필름, 써킷 테이프 등등)를 연결하는 가느다란 도선을 말한다. 즉, 도전성 와이어는 반도체 다이와 이를 받쳐주는 섭스트레이트 사이를 전기적으로 연결하는 가느다란 도선으로서 반도체 구조 재료 중의 하나이다.In general, the bonding wires for semiconductor packages are made of high purity gold (Au), aluminum (Al), copper (Cu), silver (Ag) and are used for semiconductor diodes and sub leads (lead frames, printed circuit boards, circuit films, ). That is, the conductive wire is one of the semiconductor structural materials as a thin conductor which electrically connects the semiconductor die and the supertor supporting it.

이러한 도전성 와이어는 반도체패키지의 종류, 물리적, 기계적 특징 또는 고객의 사양에 따라 다양한 직경 및 금속 소재로 제조될 수 있으며, 높은 화학적 안정성과 전기전도도 때문에 금(Au)을 주로 사용하여 왔다. 그러나 최근 금 가격이 급격히 상승함에 따라서, 금 대체 재료 와이어의 전환이 다양한 반도체 패키지에서 진행되고 있다. 대표적으로 구리와이어를 들 수 있는데, 이는 낮은 본딩 작업성과, 낮은 2nd bonding 강도 및 와이어 표면 산화 문제로 인하여 사용에 제약이 있으며 이를 개선한 Pd-coated Cu Wire(일명:PCW)는 도금 피막층의 불균일 제어로 인한 OB(Off-Centered Bond)불량 및 FAB(Free Air Ball)의 높은 경도로 인하여 Pad 손상(Cratering, Al splash, Peeding)등의 우려가 있다. 이에 금(Au) 와이이어와 유사한 본딩작업성과 낮은 FAB(Free Air Ball)경도를 가지는 은합금 와이어의 필요성이 대두되어 은(Ag) 순도가 80wt% 수준인 은(Ag) 와이어가 개발되었다. 하지만 금(Au)함량이 8~15wt%, 팔라듐(Pd)이 3~5wt% 수준이어서 Pd-coated Cu Wire(일명:PCW)보다 가격이 높고 전기전도도가 낮으며 많은 합금량으로 인해 FAB(Free Air Ball) 경도가 금(Au)대비 높다는 단점을 가지고 있다. 또한 고온 고습 신뢰성 문제에 대한 우려도 제약이 되고 있다.Such conductive wires can be made of various diameters and metal materials depending on the kind of semiconductor package, physical and mechanical characteristics, or customer specifications, and have been mainly used for gold (Au) because of their high chemical stability and electrical conductivity. However, as gold prices have risen sharply in recent years, the conversion of gold substitute wire has been proceeding in various semiconductor packages. Pd-coated Cu Wire (aka: PCW), which has been used for a long time due to low bonding workability, low bonding strength and wire surface oxidation, There is a risk of Pad damage (Cratering, Al splash, Peeding) due to bad off-centered bond due to OB and high hardness of FAB (Free Air Ball). The necessity of a silver alloy wire having a bonding work similar to Au wire and a low FAB (Free Air Ball) hardness has been developed, and silver (Ag) wire having a silver (Ag) purity level of 80 wt% has been developed. However, the gold (Au) content is 8 ~ 15wt% and the palladium (Pd) is 3 ~ 5wt%, which is higher price and lower electrical conductivity than Pd-coated Cu Wire (aka PCW) Air Ball) has a disadvantage that the hardness is higher than gold (Au). In addition, concerns about high temperature and high humidity reliability problems are also limited.

본 발명이 해결하고자 하는 과제는 와이어 본딩 시, 금(Au)과 유사한 FAB(Free Air Ball) 경도값을 갖고, 1st 볼(ball) 및 2nd 와이어(wire)의 높은 접착 강도(Bondability)를 가지며, 고온(HTS: High Temperature Storage) 및 고습 신뢰성(PCT:Pressure Cooker Test)이 높고 비용이 저렴한 반도체 패키지용 은합금 와이어를 제공하는 것을 목적으로 한다.A problem to be solved by the present invention is to provide a wire bonding method which has a FAB (Free Air Ball) hardness value similar to gold (Au) at the time of wire bonding and has a high bonding strength of 1st ball and 2nd wire, It is an object of the present invention to provide a silver alloy wire for a semiconductor package which is high in temperature (HTS: High Temperature Storage) and high in reliability (PCT: Pressure Cooker Test) and low in cost.

상기의 목적을 달성하기 위해 본 발명은 순도 99.99% 이상의 은(Ag)에 금(Au), 팔라듐(Pd), 백금(Pt)등의 제1 첨가성분과 칼슘(Ca), 베릴륨(Be), 란탄(La), 세륨(Ce), 이트륨(Y)의 제2 첨가성분을 적절하게 조합하여 우수한 본딩 특성을 가지며, 신뢰성이 높고 비용이 저렴한 반도체 패키지용 은합금 와이어를 제공하는 것이다.In order to achieve the above-mentioned object, the present invention provides a method for producing a silver halide photovoltaic cell, which comprises adding a first additive component such as gold (Au), palladium (Pd), and platinum (Pt) And a second additive component of lanthanum (La), cerium (Ce), and yttrium (Y) are appropriately combined to provide an excellent bonding property, high reliability and low cost.

본 발명에 의한 반도체 패키지용 은합금 와이어는 금(Au)와이어에 비해 단가를 현저히 낮출 수 있으며, Pd-coated Cu Wire와 동등 수준 내지 그 이하로 제조 원가를 낮출 수 있다.The silver alloy wire for a semiconductor package according to the present invention can significantly lower the unit cost as compared with the gold (Au) wire and can lower the manufacturing cost to the same level or less as that of the Pd-coated Cu wire.

뿐만 아니라 금(Au)과 유사한 FAB(Free Air Ball) 경도 및 본딩 성능을 구현 할 수 있어 Pd-coated Cu Wire 단점인 pad 손상, 낮은 수율 등을 보완할 수 있고 고온 고습 분위기에서도 신뢰성을 보장할 수 있다.In addition, FAB (Free Air Ball) hardness and bonding performance similar to gold (Au) can be realized, which can compensate for pad damage, low yield, which is a disadvantage of Pd-coated Cu Wire, and can guarantee reliability even in high temperature and high humidity environments. have.

상기 기술적 과제를 달성하기 위해 반도체 패키지용 은합금 와이어는 금(Au), 팔라듐(Pd), 백금(Pt)등의 제1 첨가성분을 각각 0.1wt%~5wt%함유하고 칼슘(Ca), 베릴륨(Be), 란탄(La), 세륨(Ce), 이트륨(Y)의 제2 첨가성분에서 선택된 1종 이상의 원소를 5ppm(wt)~50ppm(wt)함유하며 나머지는 은(Ag)으로 이루어진다.In order to achieve the above object, the silver alloy wire for a semiconductor package contains 0.1 wt% to 5 wt% of a first additive component such as gold (Au), palladium (Pd), and platinum (Pt) And 5 ppm (wt) to 50 ppm (wt) of at least one element selected from a second additive component of lanthanum (Be), lanthanum (La), cerium (Ce) and yttrium (Y)

더욱 성세하게는, 본 발명은 순도 99.99wt% 이상의 은(Ag), 99.99wt% 이상의 금(Au), 99.95wt% 이상의 팔라듐(Pd), 99.95wt% 이상의 백금(Pt)으로 이루어진 4원 합금계 본딩 와이어(Bonding wire)이고, 금(Au), 팔라듐(Pd), 백금(Pt)의 제1 첨가성분을 각각 0.1wt%~5wt% 함유하고 칼슘(Ca), 베릴륨(Be), 란탄(La), 세륨(Ce) 및 이트륨(Y) 군에서 선택된 1종 이상의 제2 첨가성분을 총합계 5ppm(wt)~50ppm(wt)으로 함유하며 나머지는 은(Ag)으로 이루어진 것을 특징으로 한다.More precisely, the present invention relates to a quaternary alloy system comprising 99.99 wt% or more of purity of silver (Ag), 99.99 wt% or more of gold (Au), 99.95 wt% or more of palladium (Pd), and 99.95 wt% or more of platinum Bonding wire is a bonding wire which contains 0.1 wt% to 5 wt% of first additive components of gold (Au), palladium (Pd) and platinum (Pt) and contains calcium (Ca), beryllium (Be) ), Cerium (Ce) and yttrium (Y) in a total amount of 5 ppm (wt) to 50 ppm (wt) and the balance of silver (Ag).

또한 제1 첨가성분은 금(Au) 1wt%~5wt% 및 팔라듐(Pd)과 백금(Pt)의 합이 2wt%~10wt% 함유하는 것을 특징으로 한다.The first additive component is characterized by containing 1 wt% to 5 wt% of gold (Au) and 2 wt% to 10 wt% of the sum of palladium (Pd) and platinum (Pt).

또한 제2 첨가성분이 칼슘(Calcium) 또는 란탄(Lanthanum) 또는 세륨(Cerium) 또는 이트륨(Yttrium)인 것을 특징으로 한다.And the second additive component is calcium or lanthanum, cerium or yttrium.

제1 첨가성분 중 금(Au)은 Al pad와의 용융 접합 시 접합 면적을 넓혀 1st 볼 셰어(ball shear)강도를 증가시킬 수 있으며, 2nd 본딩에서는 금(Au)이나 은(Ag) lead와의 접합 면적을 넓혀 와이어 접착 강도(wire pull strength)를 증가시킬 수 있다.Au of the first additive component may increase the strength of the first ball shear by increasing the bonding area when fusion bonding with the Al pad. In the second bonding, the bonding area with gold (Au) or silver (Ag) Can be widened to increase the wire pull strength.

금(Au) 함량이 5wt% 를 초과하여도 그 효과가 유사한 결과를 나타낼 수 있다. 또한 금(Au) 단독으로 합금할 경우, 1st 볼(ball)의 두께 편차가 크며 1st 볼 셰어(ball shear)강도와 2nd 접착 강도(wire pull strength)가 낮아질 수 있다. 그러나 팔라듐(Pd), 백금(Pt)을 함께 첨가한 경우, 1st 볼(ball)의 두께 편차가 작아지며 1st 볼 셰어(ball shear)강도와 2nd 접착 강도(wire pull strength)가 향상된다.Even if the gold (Au) content exceeds 5 wt%, the effect can be similar. Also, when gold (Au) is alloyed alone, the thickness of the first ball is large and the first ball shear strength and the second pull strength can be lowered. However, when palladium (Pd) and platinum (Pt) are added together, the thickness variation of the first ball becomes smaller and the strength of the first ball shear and the second pull strength are improved.

팔라듐(Pd), 백금(Pt)은 1st 본딩(bonding)시에 은(Ag)과 알루미늄(Al)의 금속간 화합물 Ag2Al형성을 억제하는 효과가 있으며 고온,고습 분위기에서 금속간 화합물 Ag2Al과 1st 볼(ball) 사이에서 배리어(barrier) 역할을 하여 Ag2Al이 부식되어 Ag와 Al2O3로 바뀌는 것을 억제하는 효과가 있다. 그리고 동일한 wt%를 합금할 때 팔라듐(Pd)이나 백금(Pt)을 단독으로 합금한 경우 그 효과가 낮은 반면, 두 금속을 모두 합금한 경우 그 효과가 증대된다. 하지만 팔라듐(Pd)와 백금(Pt)의 총합금량이 10wt%를 초과하게 되면 FAB 경도가 높아 1st 본딩 시 메탈 필링(metal peeling), 크래터링(Cratering) 등의 pad손상을 야기할 수 있다.Palladium (Pd), platinum (Pt) is 1st bonding (bonding) when the silver (Ag) and aluminum intermetallic compound (Al) and the effect of suppressing Ag 2 Al formed between the metal at a high temperature, high humidity atmosphere, the compound Ag 2 And acts as a barrier between Al and the first ball to inhibit Ag 2 Al from being corroded and converted to Ag and Al 2 O 3 . And, when the same wt% is alloyed with palladium (Pd) or platinum (Pt) alone, the effect is low, whereas when both metals are alloyed, the effect is increased. However, when the total alloy amount of palladium (Pd) and platinum (Pt) exceeds 10 wt%, the FAB hardness is high, which may cause pad damage such as metal peeling and cratering in the first bonding.

제2 첨가성분은 단독으로 사용하지 않고 제1 첨가성분을 보완하는 역할을 하며 5ppm(wt) ~ 50ppm(wt) 함량으로 첨가되고, 미세 분산되어 Ag-Au-Pd-Pt 4원 합금의 결정립(grain)의 조대화를 방지하고 소둔 열처리 시 연신율(Elongation) 편차를 줄여주는 역할을 한다. 그리고 FAB(Free Air Ball) 형성 시 크기 편차를 줄여 1st 본딩(bonding) 시 1st 볼(ball)의 크기 및 두께 편차를 줄이는 효과가 있고 와이어의 인장강도를 높여 1st 볼넥(ball neck)강도와 2nd 접착 강도(wire pull strength)를 향상시킬 수 있다. 하지만 50ppm(wt) 이상으로 첨가되면 FAB(Free Air Ball)의 경도를 증가시켜 1st 본딩 시 메탈 필링(metal peeling), 크래터링(Cratering) 등의 pad손상을 야기할 수 있으며, 또한 FAB(Free Air Ball)의 수축공 형성을 야기하여 본딩접합력 약화 및 신뢰성에 좋지 않은 영향을 줄 수 있다.The second additive component serves to supplement the first additive component without being used alone and is added in an amount of 5 ppm (wt) to 50 ppm (wt), finely dispersed to form crystal grains of Ag-Au-Pd- grain) and prevent elongation deviation during annealing annealing. It has the effect of reducing the size and thickness variation of 1st ball when 1st bonding is done by reducing the size deviation when forming FAB (Free Air Ball), increasing the tensile strength of wire and improving 1st ball neck strength and 2nd bonding The wire pull strength can be improved. However, if it is added more than 50ppm (wt), the hardness of FAB (Free Air Ball) will be increased to cause pad damage such as metal peeling and cratering during 1st bonding, Ball's shrinkage hole formation, which may adversely affect bond bonding strength and reliability.

표 1은 본 발명의 실시예 1-27에서 제조된 은합금 와이어와 비교예 1-24에서 제조된 은합금와이어의 첨가성분들에 의한 은합금 와이어 특성의 영향성을 구체적으로 실시예 및 비교예를 통해 나타냈다.Table 1 shows the influence of silver alloy wire characteristics on the silver alloy wire prepared in Examples 1-27 and the silver alloy wire prepared in Comparative Example 1-24, .

구분division 1군 원소(wt%)Group 1 element (wt%) 2군 원소ppm(wt)Group 2 element ppm (wt) 평가 항목Evaluation items AuAu PdPd PtPt CaCa BeBe LaLa CeCe YY FAB크기
편차FAB size
Deviation FAB
경도FAB
Hardness BSTBST 2nd
BPT2nd
BPT HTSHTS PCTPCT 실시
예practice
Yes 1One 0.10.1 0.10.1 0.10.1 　 55 　 　 　 ○○ ◎◎ ○○ ○○ ○○ ○○ 22 0.10.1 0.10.1 1One 55 　 　 　 　 ○○ ◎◎ ○○ ○○ ○○ ○○ 33 0.10.1 0.10.1 55 1010 1515 　 　 　 ◎◎ ◎◎ ○○ ○○ ○○ ◎◎ 44 0.10.1 1One 0.10.1 2525 2525 　 　 　 ◎◎ ◎◎ ○○ ○○ ○○ ○○ 55 0.10.1 1One 1One 　 　 55 　 　 ○○ ◎◎ ○○ ◎◎ ○○ ○○ 66 0.10.1 1One 55 　 　 　 55 　 ○○ ◎◎ ○○ ◎◎ ○○ ◎◎ 77 0.10.1 55 0.10.1 　 　 　 　 55 ○○ ◎◎ ○○ ◎◎ ◎◎ ○○ 88 0.10.1 55 1One 　 　 2020 1010 　 ◎◎ ◎◎ ○○ ◎◎ ◎◎ ○○ 99 0.10.1 55 55 　 　 　 2020 3030 ◎◎ ○○ ○○ ◎◎ ◎◎ ◎◎ 1010 1One 0.10.1 0.10.1 　 　 1515 1515 2020 ◎◎ ◎◎ ◎◎ ○○ ○○ ○○ 1111 1One 0.10.1 1One 1010 　 1515 1010 1515 ◎◎ ◎◎ ◎◎ ○○ ○○ ○○ 1212 1One 0.10.1 55 1010 　 2020 2020 　 ◎◎ ◎◎ ◎◎ ◎◎ ○○ ◎◎ 1313 1One 1One 0.10.1 1010 　 　 2020 2020 ◎◎ ◎◎ ◎◎ ○○ ○○ ○○ 1414 1One 1One 1One 1010 　 2020 　 2020 ◎◎ ◎◎ ◎◎ ◎◎ ○○ ○○ 1515 1One 1One 55 　 1010 1515 1515 1010 ◎◎ ◎◎ ◎◎ ◎◎ ○○ ◎◎ 1616 1One 55 0.10.1 　 1010 2020 2020 　 ◎◎ ◎◎ ◎◎ ◎◎ ◎◎ ○○ 1717 1One 55 1One 　 1010 　 2020 2020 ◎◎ ◎◎ ◎◎ ◎◎ ◎◎ ○○ 1818 1One 55 55 　 1010 2020 　 2020 ◎◎ ○○ ◎◎ ◎◎ ◎◎ ◎◎ 1919 55 0.10.1 0.10.1 1515 55 2020 1010 　 ◎◎ ◎◎ ◎◎ ○○ ○○ ○○ 2020 55 0.10.1 1One 1515 55 　 2020 1010 ◎◎ ◎◎ ◎◎ ○○ ○○ ○○ 2121 55 0.10.1 55 1515 55 1010 　 2020 ◎◎ ◎◎ ◎◎ ◎◎ ○○ ◎◎ 2222 55 1One 0.10.1 1010 1010 2020 1010 　 ◎◎ ◎◎ ◎◎ ○○ ○○ ○○ 2323 55 1One 1One 1010 1010 　 2020 1010 ◎◎ ◎◎ ◎◎ ◎◎ ○○ ○○ 2424 55 1One 55 1010 1010 1010 　 2020 ◎◎ ◎◎ ◎◎ ◎◎ ○○ ◎◎ 2525 55 55 0.10.1 55 2020 1515 1010 　 ◎◎ ◎◎ ◎◎ ◎◎ ◎◎ ○○ 2626 55 55 1One 55 2020 　 1515 1010 ◎◎ ◎◎ ◎◎ ◎◎ ◎◎ ○○ 2727 55 55 55 55 2020 1010 　 1515 ◎◎ ○○ ◎◎ ◎◎ ◎◎ ◎◎ 비교
예compare
Yes 1One 0.050.05 0.10.1 0.10.1 　 55 　 　 　 ○○ ◎◎ ×× △△ ○○ ○○ 22 0.050.05 　 0.20.2 　 55 　 　 　 ○○ ◎◎ ×× ×× △△ △△ 33 0.050.05 0.20.2 　 　 55 　 　 　 ○○ ◎◎ ×× ×× ○○ △△ 44 0.10.1 0.050.05 0.10.1 　 55 　 　 　 ○○ ◎◎ ○○ △△ △△ △△ 55 0.20.2 0.050.05 　 　 55 　 　 　 ○○ ◎◎ ○○ △△ △△ △△ 66 　 0.050.05 0.20.2 　 55 　 　 　 ○○ ◎◎ ×× △△ ○○ ○○ 77 0.10.1 0.10.1 0.050.05 　 55 　 　 　 ○○ ◎◎ ○○ △△ △△ △△ 88 　 0.20.2 0.050.05 　 55 　 　 　 ○○ ◎◎ ×× ×× ○○ △△ 99 0.20.2 　 0.050.05 　 55 　 　 　 ○○ ◎◎ △△ △△ ×× ×× 1010 0.10.1 0.10.1 0.10.1 　 33 　 　 　 ×× ◎◎ ○○ ○○ ○○ ○○ 1111 66 55 55 55 2020 1010 　 1515 ◎◎ △△ ○○ ○○ ◎◎ ◎◎ 1212 66 1010 　 55 2020 1010 　 1515 ◎◎ △△ ○○ ○○ ◎◎ △△ 1313 66 　 1010 55 2020 1010 　 1515 ◎◎ △△ ○○ ○○ △△ ○○ 1414 55 66 55 55 2020 1010 　 1515 ◎◎ △△ ○○ ○○ ◎◎ ◎◎ 1515 　 66 1010 55 2020 1010 　 1515 ◎◎ ×× △△ △△ ◎◎ ◎◎ 1616 1010 66 　 55 2020 1010 　 1515 ◎◎ ○○ ◎◎ ◎◎ △△ ×× 1717 55 55 66 55 2020 1010 　 1515 ◎◎ △△ ○○ ○○ ◎◎ ◎◎ 1818 1010 　 55 55 2020 1010 　 1515 ◎◎ ○○ ○○ ○○ △△ ○○ 1919 　 1010 55 55 2020 1010 　 1515 ◎◎ ×× △△ △△ ◎◎ ◎◎ 2020 55 55 55 33 　 　 　 　 △△ ○○ ○○ ○○ ◎◎ ◎◎ 2121 55 55 55 1010 2020 1010 55 1515 ◎◎ △△ △△ ○○ ◎◎ ◎◎ 2222 1515 　 　 55 2020 1010 　 1515 ○○ ◎◎ △△ △△ ×× ×× 2323 　 1515 　 55 2020 1010 　 1515 ○○ ×× ×× ×× ○○ △△ 2424 　 　 1515 55 2020 1010 　 1515 ○○ ×× ×× ×× △△ ○○

표 2는 평가 항목에 대한 평가 기준을 나타낸다.Table 2 shows the evaluation criteria for the evaluation items.

◎◎ ○○ △△ ×× FAB크기편차FAB size deviation < 2㎛<2 탆 < 3㎛<3 μm < 4㎛<4 μm > 4㎛> 4 μm FAB 경도FAB longitude 50~55HV50 to 55HV 56~60HV56 ~ 60HV 61~65HV61 ~ 65HV > 66Hv> 66Hv BSTBST > 25 gf> 25 gf > 23 gf> 23 gf > 21 gf> 21 gf > 19 gf> 19 gf 2nd BPT2nd BPT > 5.0 gf> 5.0 gf > 4.5 gf> 4.5 gf > 4.0 gf> 4.0 gf > 3.5 gf> 3.5 gf HTSHTS Pass:100%Pass: 100% Pass>80%Pass> 80% Pass>60%Pass> 60% Pass<60%Pass <60% PCTPCT Pass:100%Pass: 100% Pass>80%Pass> 80% Pass>60%Pass> 60% Pass<60%Pass <60%

표 2에서, 평가한 은(Ag)와이어는 지름이 약 20㎛이다.In Table 2, the evaluated silver (Ag) wire has a diameter of about 20 mu m.

표 2에서, FAB크기 편차는 FAB 100개를 측정하여 max-min 값으로 평가한다.In Table 2, the FAB size deviation is measured by measuring 100 FABs and evaluating the max-min value.

표 2에서, FAB 경도는 FAB 50개를 측정하여 평균값으로 평가한다.In Table 2, the FAB hardness is measured as an average value by measuring 50 FABs.

표 2에서, BST는 Si die 4면에 본딩한 후 각 면에서 20개씩 총 80개를 측정하여 평균값으로 평가한다.In Table 2, BST is bonded to 4 sides of Si die, and then a total of 80 pieces, 20 pieces on each side, are measured and evaluated as an average value.

표 2에서, 2nd BPT는 섭스트레이트 4면에 본딩한 후 각 면에서 20개씩 총 80개를 측정하여 평균값으로 평한다.In Table 2, the 2nd BPT is measured on a total of 80 samples, 20 on each side after being bonded to the four sides of the suprate.

표 2에서, HTS는 와이이 본딩 후 mold compound를 적용하지 않은 상태로 175℃, 진공분위기에서 500hr 진행 후 1st BPT를 진행하여 6gf 이상일 경우 pass로 적용한다.In Table 2, HTS is applied to pass 1st BPT after 500hr in 175 ℃ and vacuum atmosphere without the mold compound applied after the Y-bonding.

표 2에서, PCT는 와이이 본딩 후 mold compound를 적용하지 않은 상태로 121℃, 100%, 2atm 조건에서 96hr 진행 후 1st BPT를 진행하여 6gf 이상일 경우 pass로 적용한다.In Table 2, PCT is applied at 121 ℃, 100%, and 2atm after 96 hours without first applying the mold compound after wire bonding.

표 1에서, 실시 예 1, 27과 비교 예10, 20에서는 2군 원소의 함량이 FAB 크기 편차에 미치는 영향을 알 수 있으며, 실시 예27과 비교 예21에서는 2군 원소의 함량이 50wt% 초과 시 FAB 경도 및 BST에 미치는 영향을 알 수 있다.In Table 1, it can be seen that the content of the Group 2 elements in Examples 1 and 27 and Comparative Examples 10 and 20 affects the FAB size variation. In Example 27 and Comparative Example 21, the content of the Group 2 elements exceeds 50 wt% FAB hardness and BST.

표 1에서, 실시 예1~27과 비교 예1~3에서는 금(Au)의 함량에 따른 BST 영향을 알 수 있으며 1wt%~5wt% 수준이 더 바람직하다.In Table 1, in Examples 1 to 27 and Comparative Examples 1 to 3, the influence of BST according to the content of gold (Au) can be known, more preferably 1 wt% to 5 wt%.

표 1 전체에서, 금(Au), 팔라듐(Pd), 백금(Pt)의 조성에 따른 2nd BPT 영향을 알 수 있으며 금(Au)은 1wt%~5wt%, 팔라듐(Pd)과 백금(Pt)의 합은 2wt%~10wt% 수준이 더 바람직하다.It can be seen from Table 1 that the effect of 2nd BPT depends on the composition of gold (Au), palladium (Pd) and platinum (Pt). Au is contained in 1 wt% to 5 wt%, palladium (Pd) Is preferably 2 wt% to 10 wt%.

표 1에서, 실시 예3과 7, 6과 8, 12와 16, 15와 17, 21과 25, 24와 26에서는 팔라듐(Pd)이 HTS에 더 좋은 효과를 나타이며 백금(Pt)은 PCT에 더 좋은 결과를 보이지만, 비교예11 ~ 13, 23, 24에서는 팔라듐(Pd)과 백금(Pt)이 단독으로 합금 되었을 때 신뢰성에 문제가 발생하므로 두 금속을 조합하여 적용해야 함을 알 수 있다.In Table 1, palladium (Pd) exhibited a better effect on HTS in Examples 3 and 7, 6 and 8, 12 and 16, 15 and 17, 21 and 25, 24 and 26, and platinum (Pt) In Comparative Examples 11 to 13, 23 and 24, however, there is a problem in reliability when palladium (Pd) and platinum (Pt) are alloyed alone. Therefore, it is understood that both metals must be applied in combination.

Claims (2)

순도 99.99wt% 이상의 은(Ag), 99.99wt% 이상의 금(Au), 99.95wt% 이상의 팔라듐(Pd), 99.95wt% 이상의 백금(Pt)으로 이루어진 4원 합금계 본딩 와이어(Bonding wire)이고, 금(Au), 팔라듐(Pd), 백금(Pt)의 제1 첨가성분을 각각 0.1wt%~5wt% 함유하고 칼슘(Ca), 베릴륨(Be), 란탄(La), 세륨(Ce) 및 이트륨(Y) 군에서 선택된 1종 이상의 제2 첨가성분을 총합계 5ppm(wt)~50ppm(wt)으로 함유하며 나머지가 은(Ag)으로 이루어진 것을 특징으로 하는 반도체 패키지용 은합금 와이어.Is a quaternary alloy bonding wire consisting of silver (Ag) having a purity of 99.99 wt% or more, gold (Au) of 99.99 wt% or more, palladium (Pd) of 99.95 wt% or more, and platinum (Pt) (Ca), beryllium (Be), lanthanum (La), cerium (Ce), and yttrium (La), each containing 0.1 wt% to 5 wt% of a first additive component of gold (Au), palladium (Pd), and platinum , And at least one second additive component selected from the group consisting of silver (Y) and silver (Ag) in a total amount of 5 ppm (wt) to 50 ppm (wt). 제 1항에 있어서,
상기 제1 첨가성분은 금(Au) 1wt%~5wt% 및 팔라듐(Pd)과 백금(Pt)의 합이 2wt%~10wt% 함유하는 것을 특징으로 하는 반도체 패키지용 은합금 와이어.The method of claim 1,
Wherein the first additive component comprises 1 wt% to 5 wt% of gold (Au) and 2 wt% to 10 wt% of palladium (Pd) and platinum (Pt).
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