KR20140011864A - Precursors for deposition of gst thin film - Google Patents
Precursors for deposition of gst thin film Download PDFInfo
- Publication number
- KR20140011864A KR20140011864A KR1020120079458A KR20120079458A KR20140011864A KR 20140011864 A KR20140011864 A KR 20140011864A KR 1020120079458 A KR1020120079458 A KR 1020120079458A KR 20120079458 A KR20120079458 A KR 20120079458A KR 20140011864 A KR20140011864 A KR 20140011864A
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- KR
- South Korea
- Prior art keywords
- deposition
- precursor
- thin film
- alkyl
- gst thin
- Prior art date
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- 239000002243 precursor Substances 0.000 title claims abstract description 23
- 230000008021 deposition Effects 0.000 title abstract description 12
- 239000010409 thin film Substances 0.000 title description 8
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 14
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 7
- 238000000427 thin-film deposition Methods 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims abstract description 4
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 9
- 238000000151 deposition Methods 0.000 abstract description 14
- 125000000217 alkyl group Chemical group 0.000 abstract description 4
- 238000005137 deposition process Methods 0.000 abstract description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 8
- 229910052787 antimony Inorganic materials 0.000 description 7
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 7
- 239000011669 selenium Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 0 C*(*)CC*(C)CNC*II Chemical compound C*(*)CC*(C)CNC*II 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/90—Antimony compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
The present invention relates to a precursor for depositing a GST thin film.
Semiconductor memory devices are classified into dynamic random access memory (DRAM), which is a volatile memory device, and non-volatile random access memory (NVRAM), a nonvolatile memory device. DRAM is a large market, but because the stored information is volatile, it consumes a lot of power because the same information must be stored again in a very short period. In addition, faced with technical limitations due to the miniaturization process, non-volatile memory has emerged as a next-generation low-cost memory that has a DRAM storage density and an operating speed of static RAM (SRAM). Currently, research on next-generation nonvolatile memory is being actively conducted at home and abroad. Among them, PRAM (phase change random access memory) is attracting the most attention.
A phase change memory (PRAM) is a chalcogenide material that exhibits optical and electrical switching phenomena between amorphous and crystalline states, and is a memory in which information is recorded / erased / reproduced due to a difference in electrical resistance. Phase change memory is very excellent in terms of performance such as fast operation speed and high integration, and can be manufactured at low process cost because of simple device structure and manufacturing process. Currently, Ge / Sb / Te is widely used as a material for phase change memory devices, and a precursor for depositing each thin film is required. However, the Te precursor has a problem in that the consumption of the precursor is high due to low deposition efficiency.
An object of the present invention is to provide a precursor for GST thin film deposition that can simplify the deposition process and increase the deposition efficiency.
GST thin film deposition precursor according to an embodiment of the present invention is represented by the following formula (1).
[Formula 1]
(In Formula 1, R1 is C1 ~ C6 alkyl, R2 is C1 ~ C6 alkyl, R3 is C1 ~ C6 alkyl, M is Se or Te)
Currently, each precursor is used for the deposition of GST thin film, but the antimony and tellurium single precursor combined in the present invention can be used to deposit the antimony and tellurium at once, thus simplifying the deposition process and antimony deposition. At the same time, it is possible to deposit tellurium, thereby increasing the deposition efficiency of tellurium. In addition, the structure of the material shown in the present invention is not only limited to antimony and tellurium, but also applicable to the antimony and selenium bonding structure, and will exhibit similar characteristics.
1 shows a memory device structure using GST.
The present invention is a precursor of a novel structure containing antimony and tellurium, forms a single precursor that is directly bonded to antimony and tellurium, contains an amine bond, high stability, easy structure for ALD deposition to be. The structure of the present invention can be equally applied to selenium in addition to tellurium.
The precursor is applicable to the deposition of GST thin film for PRAM, but the application range is not limited thereto.
GST thin film deposition precursor according to an embodiment of the present invention is represented by the following formula (1).
[Formula 1]
(In Formula 1, R1 is C1 ~ C6 alkyl, R2 is C1 ~ C6 alkyl, R3 is C1 ~ C6 alkyl, M is Se or Te)
The precursor for depositing a GST thin film represented by Chemical Formula 1 may be prepared as in Scheme 1 below.
[Reaction Scheme 1]
The solvent may be Ether, THF, or Hexane.
The precursor is a novel precursor comprising Sb-Te or Sb-Se bonds. In particular, it contains an amine and an alkyl group simultaneously. Thus, it has moderate volatility.
The precursor may deposit a binary film at a time during ALD deposition. Therefore, it can be used for Ge / Sb / Te (GST) thin film and application thin film deposition.
The precursor may improve the deposition efficiency of Te and Se as a single source.
Claims (1)
[Chemical Formula 1]
(In Formula 1, R1 is C1 ~ C6 alkyl, R2 is C1 ~ C6 alkyl, R3 is C1 ~ C6 alkyl, M is Se or Te)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120079458A KR20140011864A (en) | 2012-07-20 | 2012-07-20 | Precursors for deposition of gst thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120079458A KR20140011864A (en) | 2012-07-20 | 2012-07-20 | Precursors for deposition of gst thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20140011864A true KR20140011864A (en) | 2014-01-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020120079458A KR20140011864A (en) | 2012-07-20 | 2012-07-20 | Precursors for deposition of gst thin film |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20140011864A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210157716A (en) | 2020-06-22 | 2021-12-29 | 한상관 | By storing a large amount of river water to create an artificial fish farm and at the same time to reduce the generation of fine dust, it improves the polluted air in the atmosphere, and at the same time, preferentially discharges clean water molecules with a heavy specific gravity so that the polluted river water is converted into clean river water. A nature-friendly water purification eco-friendly method that naturally purifies the water quality of reservoirs, lakes, dams, lagoons, rivers, and rivers while producing a large amount of electricity using a nature-friendly eco-friendly water storage system configured to purify |
-
2012
- 2012-07-20 KR KR1020120079458A patent/KR20140011864A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210157716A (en) | 2020-06-22 | 2021-12-29 | 한상관 | By storing a large amount of river water to create an artificial fish farm and at the same time to reduce the generation of fine dust, it improves the polluted air in the atmosphere, and at the same time, preferentially discharges clean water molecules with a heavy specific gravity so that the polluted river water is converted into clean river water. A nature-friendly water purification eco-friendly method that naturally purifies the water quality of reservoirs, lakes, dams, lagoons, rivers, and rivers while producing a large amount of electricity using a nature-friendly eco-friendly water storage system configured to purify |
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