CN101414481A - Phase-change memory cell based on SiSb composite material - Google Patents
Phase-change memory cell based on SiSb composite material Download PDFInfo
- Publication number
- CN101414481A CN101414481A CNA2008102033574A CN200810203357A CN101414481A CN 101414481 A CN101414481 A CN 101414481A CN A2008102033574 A CNA2008102033574 A CN A2008102033574A CN 200810203357 A CN200810203357 A CN 200810203357A CN 101414481 A CN101414481 A CN 101414481A
- Authority
- CN
- China
- Prior art keywords
- sisb
- phase
- type
- semiconductor
- compound substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002131 composite material Substances 0.000 title abstract 3
- 238000003860 storage Methods 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 150000001875 compounds Chemical class 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229920001296 polysiloxane Polymers 0.000 claims description 8
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000008859 change Effects 0.000 abstract description 12
- 239000012782 phase change material Substances 0.000 abstract description 10
- 230000002441 reversible effect Effects 0.000 abstract description 5
- 230000009466 transformation Effects 0.000 abstract description 4
- 238000013500 data storage Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 230000006870 function Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000007704 transition Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000002860 competitive effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Semiconductor Memories (AREA)
Abstract
The invention relates to a phase change memory cell based on an SiSb composite material. The SiSb is a composite material which has semiconductor properties and phase change properties, and the material has reversible transformation capacity between high resistance and low resistance under the effect of an electrical signal. When Si content of the SiSb is relatively high (the Si content is more than 50% of the atomic ratio), the SiSb material is a n-type semiconductor; while when the Si content of the SiSb is relatively low (the Si content is less than 30% of the atomic ratio), the SiSb material is a phase change material which is taken as a storage media of the phase change memory cell. A diode structure is formed by the n-type SiSb semiconductor and the p-type Si, and a 1D1R structure (a diode and a resistor) is formed by taking the SiSb phase change material with lower Si content as the storage media, thus realizing the data storage function.
Description
Technical field
The present invention relates to the association area of semiconductor memory, specifically a kind of phase-changing memory unit based on the SiSb compound substance.
Background technology
Phase-change random access memory (phase change random access memory, PCRAM) be acknowledged as nearly 40 years since the most great breakthrough of semiconductor memory technologies, it is most promising nonvolatile memory of future generation, its principle is based upon in the transformation of the resistivity before and after the phase-change material phase transformation, the amorphous of phase-change material has different resistivity with the polycrystalline attitude, therefore can realize the storage of logical data.The speed of PCRAM is fast, density is high, data holding ability is good, cost has competitive power, and it not only has the superior performance of each side, and is a kind of general storer, has vast market prospect.After it realizes industrialization, be expected to part or substitute comprehensively comprise the present multiple memory device that comprises flash (flash memory), DRAM (dynamic RAM), hard disk, thereby in semiconductor memory market, occupy consequence.
The storage unit of PCRAM partly is the resistance (phase-change material) that can programme and regulate by electric signal, in the storage chip of reality is used, needs logical device that storage unit is carried out gating and operation.At present, the density of PCRAM depends primarily on the transistorized size of driving, as everyone knows, the area of diode will be much smaller than the field effect transistor of equivalent technology node manufacturing, so, in highdensity PCRAM storage array, diode becomes the main flow direction of each big semiconductor company development at present because of its relative smaller units area, will significantly be adopted in the application of large-volume PCR AM.
SiSb has the performance advantage of each side as a kind of high performance phase-change storage material,, no tellurium simple as: composition, less variable density, high data retention ability etc.(people such as T.Zhang, Advantages of SiSb phase-change materialand itsapplications in phase-change memory, Appl.Phys.Lett.912221022007).According to our research, the higher SiSb material of silicone content also is a kind of semiconductor material of n type simultaneously, and therefore, the SiSb material possesses phase-change characteristic and characteristic of semiconductor simultaneously, is a kind of compound substance.Silicon is modal semiconductor material, and Sb is a n type doping method commonly used in semiconductor technology to the doping of silicon.SiSb is as a kind of semiconductor of n type, by proper technical conditions, can and the semiconductor of p type between form diode, thereby make logical device.The SiSb method for preparing semi-conducting material is simple, has competitive power in order to make the diode cost.
Summary of the invention
The objective of the invention is to relate to the application of SiSb compound substance in phase transition storage, and then provide a kind of manufacturing process the phase-changing memory unit based on the SiSb compound substance simple, with low cost.
For achieving the above object, the present invention has adopted following technical scheme:
The invention discloses a kind of phase-changing memory unit based on the SiSb compound substance, in this phase transition storage, SiSb is not only storage medium, or the part of logic gating unit (diode), has formed the diode structure of gating jointly with other semiconductor materials.The preferred component of the SiSb material of using as storage unit in phase transition storage is: silicone content is less than 30 percent atomic ratio, possesses the ability of resistance reversible transition under electric signal; And as the preferred component of the SiSb material of a logic gating unit part be: silicone content is more than 50 percent atomic ratio, and this material is a n type conduction, can and the p N-type semiconductor N between form the pn knot.
In the above-mentioned phase transition storage, the diode that plays the storage unit gate action comprises the SiSb material layer of n type and the semiconductor material layer of p type, forms pn knot between the two, i.e. diode structure is in order to the driving to the corresponding stored unit.Storage unit then is the unit based on the SiSb phase-change material, can realize the reversible variation between the high resistance and low resistance under action of electric signals, thereby realizes the memory function of data.
The preferred of p N-type semiconductor N material is p type silicon, or is p type germanium.
Aforesaid phase transition storage is characterized in that adopting phase-change material to realize the transformation of device between high resistance and low resistance, thereby realizes data storage; Under action of electric signals, realize the reversible variation of phase transition storage between high resistance and low resistance.Be the twin-stage storage, also can be multistage storage.
In addition, the SiSb preparation methods is a sputtering method or for vapour deposition process or for atomic layer deposition method.
The invention has the advantages that: opened up the application of SiSb compound substance in phase transition storage, provide a kind of manufacturing process the phase-changing memory unit based on the SiSb compound substance simple, with low cost.
Description of drawings
Fig. 1 is the performance curve synoptic diagram of SiSb material.
Fig. 2 is a kind of phase change memory unit structure synoptic diagram based on the SiSb compound substance.
Fig. 3 A-Fig. 3 E is the manufacture method of phase change memory unit structure shown in Figure 2.
Fig. 4 is another kind of phase change memory unit structure synoptic diagram based on the SiSb compound substance.
Fig. 5 A-Fig. 5 C is the manufacture method of phase change memory unit structure shown in Figure 4.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described.
SiSb is a kind of high performance phase-change material, has superior data holding ability, as Fig. 1.From figure, can also see that performances such as the Tc of SiSb, data holding ability change along with the change of the silicone content in the material, the performance of material can be cut out by the silicone content in the material.
SiSb also is a kind of semiconductor material simultaneously, and conduction type is the n type, by suitable technology, can form the pn knot between n type SiSb material layer and the p N-type semiconductor N, produces the diode pair storage unit and carries out gating and operation.
Figure 2 shows that a kind of phase change memory unit structure synoptic diagram based on the SiSb compound substance, among the figure, 1 is dielectric base, 2 is the heavily doped semiconductor of p type, 3 SiSb semiconductors for n type conduction, 4 is the SiSb phase-change material, being different from 3 layers is that its silicone content is less, exist as storage unit, and 5 be metal electrode.Form diode structure between 2 and 3 among the figure, had logic gating function; 4 layers SiSb phase-change material possesses the ability that reversible resistance changes under the electric signal effect, is storage unit; Formed the 1D1R structure between diode and the storage unit, resistance of a diode.
Figure 3 shows that the manufacturing process of Fig. 2 structure, at first on silicon base 6, produce the heavily doped silicon 7 of p type, as shown in Figure 3A by photoetching and ion implantation technology; Adopt chemical vapour deposition technique to be deposited on deposition polycrystalline attitude Si on the said structure
90Sb
10Film, underlayer temperature are 400 degree, adopt back carving technology to obtain cross-section structure as Fig. 3 B, spend under the nitrogen atmosphere protections 450 and anneal 5 hours; Adopt the chemical vapour deposition technique deposition to continue deposition Si
10Sb
90Film, underlayer temperature is a room temperature during film preparation, and the deposition back adopts chemically mechanical polishing to carry out planarization, and the structure that obtains is shown in Fig. 3 C; Make electrode W, by obtaining the structure shown in Fig. 3 D after the photoetching.P type silicon 7 and n type polycrystalline attitude Si
90Sb
10Form diode between the film, and the Si of diode top
10Sb
90Thin layer is a storage unit, more than formed phase-changing memory unit jointly.
Figure 4 shows that another kind of phase change memory unit structure synoptic diagram based on the SiSb compound substance, Fig. 5 is the manufacture method of said structure.At first make p type silicon 12 in substrate 11, method is a diffusion method, obtains the structure shown in Fig. 5 A; Atomic layer deposition method deposition Si
95Sb
5 Film 13 adopts chemically mechanical polishing to carry out planarization, with outside the hole more than Si
95Sb
5Film is all removed, shown in Fig. 5 B; Adopt sputtering method deposition Si
5Sb
95Film and TiN film adopt photoetching process to produce electrode and storage unit, and the method is compared with the described method manufacturing process of Fig. 3 more simple.P type silicon 12 and n type polycrystalline attitude Si
95Sb
5Form diode between the film, and the Si of diode top
5Sb
95Thin layer is a storage unit, more than formed phase-changing memory unit jointly.
In sum, the invention provides the application of SiSb compound substance in phase transition storage, and provide based on the structure of SiSb compound substance phase-changing memory unit and the manufacture method of dependency structure.Although only describe some preferred embodiment in detail, obvious for those skilled in the art, under the situation that does not depart from the scope of the present invention that defines by claims, can carry out some improvement and variation.
Claims (5)
1, based on the phase-changing memory unit of SiSb compound substance, comprise logic gating unit and storage medium, it is characterized in that: described storage medium is made of the SiSb material, and described logic gating unit is the pn junction diode of being made up of the semiconductor material layer of the SiSb material layer of n type and p type.
2, by the described phase-changing memory unit based on the SiSb compound substance of claim 1, it is characterized in that: described atomic ratio as silicone content in the SiSb material of storage medium is less than 30 percent.
3, by the described phase-changing memory unit based on the SiSb compound substance of claim 1, it is characterized in that: the atomic ratio of silicone content is higher than 50 percent in the SiSb material of described formation diode.
4, by the described phase-changing memory unit based on the SiSb compound substance of claim 1, it is characterized in that: described p N-type semiconductor N material is a p type silicon, or is p type germanium.
5, by each described phase-changing memory unit based on the SiSb compound substance in the claim 1-4, it is characterized in that: described SiSb preparation methods is a sputtering method or for vapour deposition process or be atomic layer deposition method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102033574A CN101414481B (en) | 2008-11-25 | 2008-11-25 | Phase-change memory cell based on SiSb composite material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102033574A CN101414481B (en) | 2008-11-25 | 2008-11-25 | Phase-change memory cell based on SiSb composite material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101414481A true CN101414481A (en) | 2009-04-22 |
| CN101414481B CN101414481B (en) | 2011-12-21 |
Family
ID=40594971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008102033574A Expired - Fee Related CN101414481B (en) | 2008-11-25 | 2008-11-25 | Phase-change memory cell based on SiSb composite material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101414481B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102214790A (en) * | 2011-06-10 | 2011-10-12 | 清华大学 | Resistive random access memory with self-rectifying effect |
| CN108962932A (en) * | 2017-05-24 | 2018-12-07 | 中国科学院物理研究所 | 1D1R memory of single stacked structure and preparation method thereof |
-
2008
- 2008-11-25 CN CN2008102033574A patent/CN101414481B/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102214790A (en) * | 2011-06-10 | 2011-10-12 | 清华大学 | Resistive random access memory with self-rectifying effect |
| CN108962932A (en) * | 2017-05-24 | 2018-12-07 | 中国科学院物理研究所 | 1D1R memory of single stacked structure and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101414481B (en) | 2011-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7768016B2 (en) | Carbon diode array for resistivity changing memories | |
| CN102117884B (en) | What do not need special selector transistor selects phase change memory device certainly | |
| KR102607859B1 (en) | Phase change memory device including two-dimensional material and method of operating the same | |
| US9276202B2 (en) | Phase-change storage unit containing TiSiN material layer and method for preparing the same | |
| JP5957375B2 (en) | Phase change memory | |
| US11031435B2 (en) | Memory device containing ovonic threshold switch material thermal isolation and method of making the same | |
| CN100550409C (en) | Phase transition storage and manufacture method thereof based on the diode gating | |
| US10777740B2 (en) | Phase changeable memory device and semiconductor integrated circuit device including the same | |
| CN111463346B (en) | OTS gating material, OTS gating unit, preparation method of OTS gating unit and memory | |
| CN110544742B (en) | Ferroelectric phase change hybrid storage unit, memory and operation method | |
| US20180269388A1 (en) | Phase change memory unit and preparation method therefor | |
| US9172037B2 (en) | Combined conductive plug/conductive line memory arrays and methods of forming the same | |
| WO2012126186A1 (en) | Resistance variable memory and fabricating method thereof | |
| CN101101962A (en) | Gallium-adulterated Ga3Sb8Te1 phase change memory unit and its making method | |
| JP2015072977A (en) | Nonvolatile semiconductor storage device and manufacturing method of the same | |
| CN103594621B (en) | A kind of phase-change memory cell and preparation method thereof | |
| US20240065120A1 (en) | Phase change memory unit and preparation method therefor | |
| US10553792B2 (en) | Textured memory cell structures | |
| JP6270600B2 (en) | Phase change memory | |
| US20130292629A1 (en) | Phase change memory cell and fabrication method thereof | |
| CN101414481B (en) | Phase-change memory cell based on SiSb composite material | |
| CN102610745B (en) | Si-Sb-Te based sulfur group compound phase-change material for phase change memory | |
| CN101976677A (en) | Phase change random access memory array based on ZnO schottky diodes and manufacturing method thereof | |
| WO2013060034A1 (en) | Storage material based on silicon doped bismuth-tellurium for phase-changing storage devices and preparation method therefor | |
| US20220069205A1 (en) | Switching device having bi-directional drive characteristics and method of operating same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111221 |