CN101414481B - Phase-change memory cell based on SiSb composite material - Google Patents
Phase-change memory cell based on SiSb composite material Download PDFInfo
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- CN101414481B CN101414481B CN2008102033574A CN200810203357A CN101414481B CN 101414481 B CN101414481 B CN 101414481B CN 2008102033574 A CN2008102033574 A CN 2008102033574A CN 200810203357 A CN200810203357 A CN 200810203357A CN 101414481 B CN101414481 B CN 101414481B
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- sisb
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- 239000002131 composite material Substances 0.000 title abstract 2
- 238000003860 storage Methods 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 6
- 150000001875 compounds Chemical class 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 15
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 10
- 230000008859 change Effects 0.000 abstract description 10
- 239000012782 phase change material Substances 0.000 abstract description 10
- 238000013500 data storage Methods 0.000 abstract description 2
- 230000006870 function Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000007704 transition Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000002860 competitive effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention relates to a phase change memory cell based on an SiSb composite material comprising a logic gating cell and a storage medium, which is characterized in that the storage medium is composed of the SiSb material, the logic gating cell is a pn junction diode composed of an n type SiSb material layer and a p type semiconductor material layer, the Si and Sb atom ratio in the SiSb material as the storage medium is 10:90 or 5:95; and the Si and Sb atom ratio in the n type SiSb material layer as the logic gating cell is 90:10 or 95:5. The invention adopts the n type SiSb semiconductor and the p type silicon to form a diode structure, and adopts the SiSb phase change material with low silicon content as the storage medium to form the 1D1R structure (one diode and one resistor), thereby realizing the data storage function.
Description
Technical field
The present invention relates to the association area of semiconductor memory, specifically a kind of phase-changing memory unit based on the SiSb compound substance.
Background technology
Phase-change random access memory (phase change random access memory, PCRAM) be acknowledged as nearly 40 years since the most great breakthrough of semiconductor memory technologies, it is most promising nonvolatile memory of future generation, its principle is based upon in the transformation of the resistivity before and after the phase-change material phase transformation, the amorphous of phase-change material has different resistivity with the polycrystalline attitude, therefore can realize the storage of logical data.The speed of PCRAM is fast, density is high, data holding ability is good, cost has competitive power, and it not only has the superior performance of each side, and is a kind of general storer, has vast market prospect.After it realizes industrialization, be expected to part or substitute comprehensively comprise the present multiple memory device that comprises flash (flash memory), DRAM (dynamic RAM), hard disk, thereby in semiconductor memory market, occupy consequence.
The storage unit of PCRAM partly is the resistance (phase-change material) that can programme and regulate by electric signal, in the storage chip of reality is used, needs logical device that storage unit is carried out gating and operation.At present, the density of PCRAM depends primarily on the transistorized size of driving, as everyone knows, the area of diode will be much smaller than the field effect transistor of equivalent technology node manufacturing, so, in highdensity PCRAM storage array, diode becomes the main flow direction of each big semiconductor company development at present because of its relative smaller units area, will significantly be adopted in the application of large-volume PCR AM.
SiSb has the performance advantage of each side as a kind of high performance phase-change storage material,, no tellurium simple as: composition, less variable density, high data retention ability etc.(people such as T.Zhang, Advantages of SiSb phase-change material and its applications in phase-change memory, Appl.Phys.Lett.912221022007).According to our research, the higher SiSb material of silicone content also is a kind of semiconductor material of n type simultaneously, and therefore, the SiSb material possesses phase-change characteristic and characteristic of semiconductor simultaneously, is a kind of compound substance.Silicon is modal semiconductor material, and Sb is a n type doping method commonly used in semiconductor technology to the doping of silicon.SiSb is as a kind of semiconductor of n type, by proper technical conditions, can and the semiconductor of p type between form diode, thereby make logical device.The SiSb method for preparing semi-conducting material is simple, has competitive power in order to make the diode cost.
Summary of the invention
The objective of the invention is to relate to the application of SiSb compound substance in phase transition storage, and then provide a kind of manufacturing process the phase-changing memory unit based on the SiSb compound substance simple, with low cost.
For achieving the above object, the present invention has adopted following technical scheme:
The invention discloses a kind of phase-changing memory unit based on the SiSb compound substance, in this phase transition storage, SiSb is not only storage medium, or the part of logic gating unit (diode), has formed the diode structure of gating jointly with other semiconductor materials.The preferred component of the SiSb material of using as storage unit in phase transition storage is: described atomic ratio as Si and Sb in the SiSb material of storage medium is 10: 90 or 5: 95; In the corresponding SiSb material layer as the n type in the logic gating unit, the atomic ratio of Si and Sb is 90: 10 or 95: 5.
In the above-mentioned phase transition storage, the diode that plays the storage unit gate action comprises the SiSb material layer of n type and the semiconductor material layer of p type, forms pn knot between the two, i.e. diode structure is in order to the driving to the corresponding stored unit.Storage unit then is the unit based on the SiSb phase-change material, can realize the reversible variation between the high resistance and low resistance under action of electric signals, thereby realizes the memory function of data.
The preferred of p N-type semiconductor N material is p type silicon, or is p type germanium.
Aforesaid phase transition storage is characterized in that adopting phase-change material to realize the transformation of device between high resistance and low resistance, thereby realizes data storage; Under action of electric signals, realize the reversible variation of phase transition storage between high resistance and low resistance.Be the twin-stage storage, also can be multistage storage.
In addition, the SiSb preparation methods is a sputtering method or for vapour deposition process or for atomic layer deposition method.
The invention has the advantages that: opened up the application of SiSb compound substance in phase transition storage, provide a kind of manufacturing process the phase-changing memory unit based on the SiSb compound substance simple, with low cost.
Description of drawings
Fig. 1 is the performance curve synoptic diagram of SiSb material.
Fig. 2 is a kind of phase change memory unit structure synoptic diagram based on the SiSb compound substance.
Fig. 3 A-Fig. 3 E is the manufacture method of phase change memory unit structure shown in Figure 2.
Fig. 4 is another kind of phase change memory unit structure synoptic diagram based on the SiSb compound substance.
Fig. 5 A-Fig. 5 C is the manufacture method of phase change memory unit structure shown in Figure 4.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described.
SiSb is a kind of high performance phase-change material, has superior data holding ability, as Fig. 1.From figure, can also see that performances such as the Tc of SiSb, data holding ability change along with the change of the silicone content in the material, the performance of material can be cut out by the silicone content in the material.
SiSb also is a kind of semiconductor material simultaneously, and conduction type is the n type, by suitable technology, can form the pn knot between n type SiSb material layer and the p N-type semiconductor N, produces the diode pair storage unit and carries out gating and operation.
Figure 2 shows that a kind of phase change memory unit structure synoptic diagram based on the SiSb compound substance, among the figure, 1 is dielectric base, 2 is the heavily doped semiconductor of p type, 3 SiSb semiconductors for n type conduction, 4 is the SiSb phase-change material, being different from 3 layers is that its silicone content is less, exist as storage unit, and 5 be metal electrode.Form diode structure between 2 and 3 among the figure, had logic gating function; 4 layers SiSb phase-change material possesses the ability that reversible resistance changes under the electric signal effect, is storage unit; Formed the 1D1R structure between diode and the storage unit, resistance of a diode.
Figure 3 shows that the manufacturing process of Fig. 2 structure, at first on silicon base 6, produce the heavily doped silicon 7 of p type, as shown in Figure 3A by photoetching and ion implantation technology; Adopt chemical vapour deposition technique to be deposited on deposition polycrystalline attitude Si on the said structure
90Sb
10Film, underlayer temperature are 400 degree, adopt back carving technology to obtain cross-section structure as Fig. 3 B, spend under the nitrogen atmosphere protections 450 and anneal 5 hours; Adopt the chemical vapour deposition technique deposition to continue deposition Si
10Sb
90Film, underlayer temperature is a room temperature during film preparation, and the deposition back adopts chemically mechanical polishing to carry out planarization, and the structure that obtains is shown in Fig. 3 C; Make electrode W, by obtaining the structure shown in Fig. 3 D after the photoetching.P type silicon 7 and n type polycrystalline attitude Si
90Sb
10Form diode between the film, and the Si of diode top
10Sb
90Thin layer is a storage unit, more than formed phase-changing memory unit jointly.
Figure 4 shows that another kind of phase change memory unit structure synoptic diagram based on the SiSb compound substance, Fig. 5 is the manufacture method of said structure.At first make p type silicon 12 in substrate 11, method is a diffusion method, obtains the structure shown in Fig. 5 A; Atomic layer deposition method deposition Si
95Sb
5 Film 13 adopts chemically mechanical polishing to carry out planarization, with outside the hole more than Si
95Sb
5Film is all removed, shown in Fig. 5 B; , adopt sputtering method deposition Si
5Sb
95Film and TiN film adopt photoetching process to produce electrode and storage unit, and the method is compared with the described method manufacturing process of Fig. 3 more simple.P type silicon 12 and n type polycrystalline attitude Si
95Sb
5Form diode between the film, and the Si of diode top
5Sb
95Thin layer is a storage unit, more than formed phase-changing memory unit jointly.
In sum, the invention provides the application of SiSb compound substance in phase transition storage, and provide based on the structure of SiSb compound substance phase-changing memory unit and the manufacture method of dependency structure.Although only describe some preferred embodiment in detail, obvious for those skilled in the art, under the situation that does not depart from the scope of the present invention that defines by claims, can carry out some improvement and variation.
Claims (3)
1. based on the phase-changing memory unit of SiSb compound substance, comprise logic gating unit and storage medium, it is characterized in that: described storage medium is made of the SiSb material, described logic gating unit is the pn junction diode of being made up of the semiconductor material layer of the SiSb material layer of n type and p type, and described atomic ratio as Si and Sb in the SiSb material of storage medium is 10: 90 or 5: 95; In the corresponding SiSb material layer as the n type in the logic gating unit, the atomic ratio of Si and Sb is 90: 10 or 95: 5.
2. by the described phase-changing memory unit based on the SiSb compound substance of claim 1, it is characterized in that: described p N-type semiconductor N material is a p type silicon, or is p type germanium.
3. by claim 1 or 2 described phase-changing memory units based on the SiSb compound substance, it is characterized in that: described SiSb preparation methods is a sputtering method or for vapour deposition process or be atomic layer deposition method.
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CN108962932A (en) * | 2017-05-24 | 2018-12-07 | 中国科学院物理研究所 | 1D1R memory of single stacked structure and preparation method thereof |
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