KR20140002542A - Antenna substrate - Google Patents

Antenna substrate Download PDF

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Publication number
KR20140002542A
KR20140002542A KR1020130074984A KR20130074984A KR20140002542A KR 20140002542 A KR20140002542 A KR 20140002542A KR 1020130074984 A KR1020130074984 A KR 1020130074984A KR 20130074984 A KR20130074984 A KR 20130074984A KR 20140002542 A KR20140002542 A KR 20140002542A
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KR
South Korea
Prior art keywords
antenna
layer
hole
build
pad
Prior art date
Application number
KR1020130074984A
Other languages
Korean (ko)
Inventor
코이치 오스미
스미코 노구치
유우키 코스가
Original Assignee
쿄세라 에스엘시 테크놀로지 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2012286490A external-priority patent/JP5955215B2/en
Application filed by 쿄세라 에스엘시 테크놀로지 가부시키가이샤 filed Critical 쿄세라 에스엘시 테크놀로지 가부시키가이샤
Publication of KR20140002542A publication Critical patent/KR20140002542A/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

An antenna substrate of the present invention installs a conductor (3) for the ground on one principal plane of a core insulating plate (1) having a through-hole (2) and alternately arranges a build-up insulating layer (4) and a build-up wiring layer (6) the thickness of which is thinner than that of the core insulating layer on the one principal plane including the conductor (3) for the ground. An antenna pad (7) is installed on the location corresponding to the conductor (3) for the ground of the other principal plane of the core insulating plate (1). The antenna pad (7) is electrically connected to the build-up wiring layer (6) through the through-hole (2).

Description

Antenna board {ANTENNA SUBSTRATE}

The present invention relates to an antenna substrate provided so as to face an antenna pad and a ground conductor in a multilayer wiring substrate.

Conventionally, as shown in FIG. 3, as the antenna substrate, the antenna pad 27 is provided on one main surface side of the multilayer wiring board, and the semiconductor element S is electrically connected to the antenna pad 27 on the other main surface side. The antenna substrate 30 mounted so that it is known is known. The antenna substrate 30 is formed by alternately stacking a plurality of buildup insulating layers 24 and buildup wiring layers 26 having via holes 25 on both main surfaces of the core insulating plate 21 having the through holes 22. . The antenna pad 27 is formed of the buildup wiring layer 26 and is provided on the buildup insulating layer 24 of the outermost layer on one main surface side. The ground conductor 23 is disposed on the main surface of the core insulating plate 21 on the one main surface side so as to face the antenna pad 27. The grounding conductor 23 is a reflecting conductor that reflects radio waves radiated from the antenna pads 27, whereby radio waves radiated from the antenna pads 27 are efficiently moved from one main surface side of the antenna substrate 30 to the outside. It is supposed to be radiated. In addition, the antenna pad 27 and the ground conductor 23 face each other with a plurality of build-up insulating layers 24 interposed therebetween, whereby an appropriate distance between the antenna pad 27 and the ground conductor 23 is provided. Is secured. If the distance between the antenna pad 27 and the ground conductor 23 is too narrow, a large capacitor will be formed between them, which will interfere with radio wave radiation.

The plurality of semiconductor element connection pads 29 formed by the build-up wiring layer 26 and connected to the semiconductor element S on the build-up insulating layer 24 of the outermost layer on the other main surface side of the antenna substrate 30. Is formed. One of these semiconductor element connection pads 29 and the antenna pads 27 are electrically connected to each other via via holes 25 and through holes 22 formed so as to overlap each other. The through hole conductor 22a is formed in the through hole 22, and the via conductor 25a is formed in the via hole 25. In addition, the via land 25b is formed between the via conductors 25a stacked on top of each other. The via land 25b is formed integrally with the via conductor 25a and its diameter is slightly larger than the diameter of the via hole 25. By making the diameter of the via land 25b slightly larger than the diameter of the via hole 25 in this way, even if the positions of the via holes 25 located above and below are slightly displaced from each other, it is possible to reliably connect them. Further, through hole lands 22b are formed at both ends of the through hole conductor 22a. The through hole land 22b is formed integrally with the through hole conductor 22a, and its diameter is slightly larger than the diameter of the through hole 22. By making the diameter of the through-hole land 22b slightly larger than the diameter of the through-hole 22 in this way, even if the position of the through-hole 22 and the via-holes 25 which are located up and down deviated slightly from each other, it connects surely between these. It is possible to do. The solder resist layer 28 is deposited on the outermost surfaces of both main surfaces of the antenna substrate 30. The solder resist layer 28 has an opening 28a for exposing a part of the buildup wiring layer 26 as the semiconductor element connection pad 29 and covers the remaining portion of the buildup wiring layer 26.

In the antenna substrate 30, a high frequency signal is supplied from the semiconductor pad S through the through hole 22 and the via hole 25 to the antenna pad 27, so that the high frequency signal is propagated from the antenna pad 27 as a radio wave. Radiated.

By the way, such an antenna substrate 30 is attached to a communication device and used for the purpose of transmitting a high frequency signal, such as an audio | video or a video, to another communication device in a distant place, for example. For example, Japanese Patent Laid-Open No. 5-183328 discloses a microwave circuit used at a mobile station radio communication terminal of a mobile radio communication system such as an inter-car communication system. In recent years, it has been demanded to transmit and receive these communication devices in a wider range. In order to meet this demand, it is necessary to radiate a high frequency signal at a higher output.

However, as the output increases, the via conductor connecting the antenna pad 27 and the through-hole land 22b to a part of the radio waves radiated in the inner direction of the antenna substrate 30 among the radio waves radiated from the antenna pad 27 ( Among the via lands 25b interposed between 25a), the via land 25b on the antenna pad 27 side may receive the conductor 23 for the ground. As a result, a part of the radio waves received by the via land 25b may be mixed as noise to radio waves radiated from the antenna pad 27, so that high frequency signals such as audio and video cannot be transmitted normally.

An object of the present invention is to provide an antenna substrate capable of transmitting a high frequency signal normally by reducing noise mixed with radio waves radiated from an antenna pad.

The antenna substrate of the present invention is provided with a ground-up conductor on one main surface of the core insulating plate having a through hole, and a build-up insulating layer and a build-up thinner than the core insulating plate on the one main surface including the ground conductor. The up wiring layer is alternately stacked, and an antenna pad is provided at a position opposite to the ground conductor on the other main surface of the core insulating plate, and the antenna pad is electrically connected to the build-up wiring layer through the through hole. It is characterized by.

(Effects of the Invention)

In the antenna substrate of the present invention, a ground conductor is provided on one main surface of the core insulating plate having a through hole, and an antenna pad facing the ground conductor is formed on the other main surface of the core insulating plate. That is, the antenna pad and the ground conductor face each other with the core insulating plate interposed therebetween. Even if the core insulating plate is made thick, it is not necessary to provide a land in the middle of the through hole conductor. Accordingly, a sufficient distance can be secured between the antenna pad and the ground conductor without interposing unnecessary land on the antenna pad side than the ground conductor. For this reason, it is possible to prevent the noise due to land from being mixed with the radio waves radiated from the antenna pad, and to provide an antenna substrate capable of transmitting a high frequency signal such as an audio or a video normally.

1 is a schematic cross-sectional view showing one embodiment of an antenna substrate according to the present invention.
2 is a schematic cross-sectional view showing another embodiment of the antenna substrate of the present invention.
3 is a schematic cross-sectional view showing a conventional antenna substrate.

Next, an embodiment of the antenna substrate according to the present invention will be described with reference to FIG. 1. As shown in FIG. 1, the antenna substrate 10 of the present invention has a build-up insulating layer 4 and a build-up wiring layer having via holes 5 only on one main surface side of the core insulating plate 1 having the through holes 2. It is achieved by laminating (6) alternately. On the buildup insulating layer 4 of the outermost layer on one main surface side, a semiconductor element connection pad 9 composed of a buildup wiring layer 6 and connected to the electrode T of the semiconductor element S is formed. . A ground conductor 3 is disposed on one main surface of the core insulating plate 1. In addition, an antenna pad 7 is formed on the other main surface of the core insulating plate 1 so as to face the ground conductor 3. The antenna pad 7 and one of the semiconductor element connection pads 9 (via lands 5b) are electrically connected to each other through through holes 2 and via holes 5 formed so as to overlap each other. . Moreover, the soldering resist layer 8 is deposited on the outermost surface on both main surface sides.

Through-hole conductors 2a are formed in the through-holes 2 described above, and via-conductors 5a are formed in the via-holes 5. Via lands 5b are formed between the via conductors 5a that are stacked up and down. Through-hole lands 2b are formed at both ends of the through-hole conductor 2a. Then, the semiconductor element connection pad 9 (including via land 5b formed on the buildup insulating layer 4 of the outermost layer) and the electrode T of the semiconductor element S are electrically connected through solder bumps. do. The high frequency signal is radiated from the antenna pad 7 as a radio wave by feeding a high frequency signal from the semiconductor element S through the via hole 5 and the through hole 2 to the antenna pad 7.

The core insulation board 1 consists of an electrical insulation material which impregnated the glass cloth with thermosetting resins, such as an epoxy resin and bismaleimide triazine resin, for example. The thickness of the core insulation board 1 is more than the thickness of the buildup insulation layer 4 mentioned later. In order to suppress the capacitance component (capacitor) formed between both, the antenna pad 7 and the ground conductor 3 need to be provided at a certain interval. Therefore, the core insulation board 1 needs to maintain the thickness to some extent. In addition, by making the thickness of the core insulation board 1 more than the thickness of the buildup insulation layer 4, the antenna pad 7 and the ground conductor 3 need not be opposed to each other with the buildup insulation layer interposed therebetween. As a result, the via land provided in the sandwiched buildup insulating layer does not receive radio waves, and noise can be reduced.

It is preferable that the thickness of the core insulation board 1 is about 150-400 micrometers. When smaller than 150 micrometers, there exists a possibility that a capacitor | capacitor may be formed between the antenna pad 7 and the ground conductor 3, and there exists a possibility that it may become the obstacle which radiates a radio wave normally from the antenna pad 7 normally. In addition, when larger than 400 micrometers, it is necessary to enlarge the through-hole 2 opening diameter in order to form the through-hole conductor 2a, and there exists a possibility that it may interfere with high density wiring.

The opening diameter of the through hole 2 is about 100 to 150 µm, and is formed by, for example, drilling. If the aperture diameter of the through hole is made too large, there is a possibility that the high-density wiring becomes hindered as described above. The through hole conductor 2a is made of a copper plating layer, and is formed by depositing a copper plating layer by electrolytic copper plating after depositing a copper plating layer on the inner wall of the through hole 2 by, for example, an electroless copper plating method.

The through hole land 2b, the ground conductor 3 and the antenna pad 7 are mainly formed of a metal such as copper by a plating method, for example, preferably 5 to 25 by a known semiadditive method. It is formed in the thickness of about micrometer.

The antenna pad 7 functions as an antenna for radiating high frequency signals fed from the semiconductor element S as radio waves. The antenna pad 7 is a circle, a rectangle, or a polygon having a predetermined area, and the size of the antenna pad 7 is, for example, preferably about 0.3 to 1.5 mm on one side.

The ground conductor 3 is a solid pattern facing the antenna pad 7 and reflects the radio wave radiated from the antenna pad 7 toward the inside of the antenna substrate 10 toward the outside. Function.

At this time, the antenna pad 7 and the ground conductor 3 face each other with a core insulating plate 1 having a thickness of about 150 to 400 µm. Even if the core insulating plate 1 is thickened to about 150 to 400 µm, it is not necessary to provide a land in the middle of the through hole conductor 2a. Therefore, a sufficient distance can be ensured between the antenna pad 7 and the ground conductor 3 without interposing an unnecessary land on the antenna pad 7 side than the ground conductor 3.

The buildup insulating layer 4 is formed by thermosetting an electrical insulating material containing a thermosetting resin such as epoxy resin or polyimide resin. The buildup insulating layer 4 is formed thinner than the core insulating plate 1. If the build-up insulating layer 4 is too thick, the aspect ratio of the via hole 5 increases when the opening diameter of the via hole 5 is reduced, making it difficult to fill the via hole 5 with the via conductor 5a. It is preferable that the thickness of the buildup insulating layer 4 is 30-70 micrometers per layer. In addition, the via hole 5 is formed by laser processing. A part of the conductor constituting the buildup wiring layer 6, such as the via land 5b, is filled in the via hole 5 as the via conductor 5a, whereby conduction of the buildup wiring layer 6 is conducted up and down.

The buildup wiring layer 6 is a wiring mainly formed of a metal such as copper by a plating method, and is formed by a known semi-additive method, for example, and provides power and a signal between the semiconductor element S and the antenna pad 7. It functions as a path to supply. When the buildup insulating layer 4 and the buildup wiring layer 6 are alternately laminated, the buildup wiring layer 6 is laminated so as to be formed on the outermost layer. This is because the semiconductor element connection pad 9 and the via land 5b are formed by a part of the buildup wiring layer 6. The thickness of the buildup wiring layer 6 is preferably about 10 to 25 µm per layer.

The buildup insulating layer 4 and the buildup wiring layer 6 are deposited only on the main surface on which the ground conductor 3 on the core insulating plate 1 is formed. For this reason, for example, when the buildup insulating layer 4 is thermally cured, heat shrinkage may occur and warp may occur in the antenna substrate 10 during processing. In order to avoid this, when forming a plurality of build-up wiring layers 6 in sequence, plating is also deposited on the upper surface of the metal serving as the antenna pad 7 described above to increase the thickness of the metal. As a result, rigidity can be imparted to the other main surface side on which the build-up insulating layer 4 and the build-up wiring layer 6 are not formed, and the antenna substrate 10 due to thermal contraction of the build-up insulating layer 4 is performed. The curvature of can be suppressed. After the formation of all the buildup wiring layers 6 is completed, the plating on the upper surface of the metal serving as the antenna pad 7 may be thinned to a predetermined thickness by etching, polishing, or the like.

The buildup insulating layer 4 and the buildup wiring layer 6 are alternately preferably stacked in two or three layers, respectively. By setting it as such a layer number, the curvature of the antenna substrate 10 by the heat shrink of the buildup insulating layer 4 can be suppressed more.

The soldering resist layer 8 consists of an electrical insulation material which hardened the thermosetting resin which has photosensitivity, such as an acrylic modified epoxy resin. The solder resist layer 8 has an opening 8a for exposing a part of the buildup wiring layer 6 as the semiconductor element connection pad 9 and covers the remaining portion of the buildup wiring layer 6. As a result, the electrode T of the semiconductor element S can be connected to the semiconductor element connection pad 9, and the remaining portion of the build-up wiring layer 6 is protected from the external environment.

Thus, in the antenna substrate 10 according to the present invention, the ground conductor 3 is formed on one main surface of the core insulating plate 1, and the other main surface of the core insulating plate 1 facing the ground conductor 3 is formed. Since the antenna pad 7 is formed at the upper portion, a sufficient distance is secured between the ground conductor 3 and the antenna pad 7 without interposing an unnecessary land on the antenna pad 7 side than the ground conductor 3. can do. Therefore, it is possible to prevent the noise caused by the land from being mixed with the radio waves radiated from the antenna pad 7, so that the antenna substrate 10 capable of transmitting a high frequency signal such as an audio or a video normally can be provided.

In addition, this invention is not limited to an example of embodiment mentioned above, A various change is possible as long as it does not deviate from the summary of this invention.

In the above-described embodiment, the core insulating plate 1 has a single layer structure. However, as shown in FIG. 2, the multilayered structure which laminated | stacked several insulating layers 11a, 11b, 11c which consist of the same or another electrically insulating material in multiple layers may be sufficient. By having such a multilayer structure, for example, the core wiring layer 18 can be formed in addition to the region sandwiched by the ground conductor 13 and the antenna pad 17 in the core insulating plate 11. The core wiring layer 18 is a wiring layer formed inside the core insulating plate 11 (for example, between the insulating layers 11a and 11b, between the insulating layers 11b and 11c, etc.), and is different from the buildup wiring layer. will be. As a result, a high-density wiring can be formed without increasing the number of layers of the build-up insulating layer 14, and the antenna substrate 20 having a high rigidity of the core insulating plate 11 can be provided.

In addition, in the above-described embodiment, the antenna pad 7 is directly formed on the other main surface of the core insulating plate 1. However, as shown in FIG. 2, the antenna pad 17 may be formed on the buildup insulating layer 14 laminated one layer on the other main surface of the core insulating plate 11. In this way, by stacking one layer of the buildup insulating layer 14 on the upper side of the core insulating plate 11, the buildup insulating layer 14 laminated on the lower surface of the core insulating plate 11 is stretched by the thermal history during manufacturing. Warpage generated due to this can be alleviated. Therefore, the antenna substrate 20 with small curvature can be provided.

Claims (6)

A ground conductor is provided on one main surface of the core insulating plate having a through hole, and a build-up insulating layer and a build-up wiring layer, which are thinner than the core insulating plate, are alternately stacked on the one main surface including the ground conductor. and,
The antenna pad is provided in the position which opposes the said ground conductor on the other main surface of the said core insulation board, The said antenna pad is electrically connected to the said buildup wiring layer through the said through-hole. The method of claim 1,
The thickness of the core insulating plate is 150 to 400㎛, the thickness of the build-up insulating layer is 30 to 70㎛, the antenna substrate. 3. The method according to claim 1 or 2,
And an aperture diameter of the through hole is 100 to 150 mu m. 3. The method according to claim 1 or 2,
And the build-up insulating layer and the build-up wiring layer are alternately stacked in two layers or three layers, respectively. 3. The method according to claim 1 or 2,
A build-up insulating layer is laminated on the other main surface of the core insulating plate, and the antenna pad is provided on the build-up insulating layer. 3. The method according to claim 1 or 2,
And said core insulating plate is formed of a plurality of insulating layers.
KR1020130074984A 2012-06-29 2013-06-28 Antenna substrate KR20140002542A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2012146363 2012-06-29
JPJP-P-2012-146363 2012-06-29
JPJP-P-2012-286490 2012-12-28
JP2012286490A JP5955215B2 (en) 2012-06-29 2012-12-28 Antenna board

Publications (1)

Publication Number Publication Date
KR20140002542A true KR20140002542A (en) 2014-01-08

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Application Number Title Priority Date Filing Date
KR1020130074984A KR20140002542A (en) 2012-06-29 2013-06-28 Antenna substrate

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200004021A (en) * 2018-07-03 2020-01-13 삼성전자주식회사 Antenna module
WO2022065984A1 (en) * 2020-09-28 2022-03-31 엘지이노텍 주식회사 Antenna substrate
WO2023182829A1 (en) * 2022-03-25 2023-09-28 엘지이노텍 주식회사 Antenna substrate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200004021A (en) * 2018-07-03 2020-01-13 삼성전자주식회사 Antenna module
US10938090B2 (en) 2018-07-03 2021-03-02 Samsung Electronics Co., Ltd. Antenna module
WO2022065984A1 (en) * 2020-09-28 2022-03-31 엘지이노텍 주식회사 Antenna substrate
WO2023182829A1 (en) * 2022-03-25 2023-09-28 엘지이노텍 주식회사 Antenna substrate

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