KR20130104921A - High efficiency light emitting diode and method of fabricating the same - Google Patents

Abstract

PURPOSE: A high efficiency light emitting diode and a manufacturing method thereof are provided to form a semiconductor laminate structure with a low dislocation density by growing semiconductor layers using a GaN substrate as a growth substrate. CONSTITUTION: A semiconductor laminate structure (30) is located on a support substrate (31). The semiconductor laminate structure includes a GaN-based p-type semiconductor layer (25), a GaN-based active layer (23), and a GaN-based n-type semiconductor layer (21). The semiconductor laminate structure has a dislocation density below 5 x 10^6/cm^2. A p-type electrode layer (27) and the p-type semiconductor form an ohmic contact between the support substrate and the semiconductor laminate structure. A transparent oxide layer (35) is located on the semiconductor laminate structure.

Description

High-Efficiency Light-Emitting Diodes and Methods of Manufacturing Them {High EFFICIENCY LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

The present invention relates to a light emitting diode and a method of manufacturing the same, and more particularly, to a high efficiency light emitting diode using a gallium nitride substrate as a growth substrate and a method of manufacturing the same.

In general, nitrides of group III elements, such as gallium nitride (GaN) and aluminum nitride (AlN), have excellent thermal stability and have a direct transition type energy band structure. It is attracting much attention as a substance. In particular, blue and green light emitting devices using indium gallium nitride (InGaN) have been used in various applications such as large-scale color flat panel display devices, traffic lights, indoor lighting, high density light sources, high resolution output systems, and optical communications.

Such a nitride semiconductor layer of Group III elements is difficult to fabricate homogeneous substrates capable of growing them, and therefore, such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE), etc., on heterogeneous substrates having a similar crystal structure. It has been grown through the process of. A sapphire substrate having a hexagonal system structure is mainly used as a heterogeneous substrate. Recently, epitaxial layers such as nitride semiconductor layers are grown on dissimilar substrates such as sapphire, bonding supporting substrates to the epitaxial layers, and then dissociating dissimilar substrates using a laser lift-off technique. Techniques for manufacturing light emitting diodes have been developed. Since a heterogeneous substrate such as sapphire and an epitaxial layer grown thereon have different physical properties, the growth substrate can be easily separated by using an interface between them.

However, epitaxial layers grown on dissimilar substrates have a relatively high dislocation density due to lattice mismatch with the growth substrate and differences in coefficient of thermal expansion. Epilayers grown on sapphire substrates are generally known to have dislocation densities of at least 1E8 / cm 2. The epitaxial layer having such a high dislocation density has a limit in improving the luminous efficiency of the light emitting diode.

On the other hand, in recent years, a research has been attempted to produce a light emitting diode by growing an epi layer using a gallium nitride substrate as a growth substrate. However, since the gallium nitride substrate is the same as the epitaxial layer grown on it, it is difficult to separate the gallium nitride substrate from the epitaxial layer to manufacture a high efficiency light emitting diode having a vertical structure.

It is an object of the present invention to provide a high efficiency light emitting diode having a vertical structure from which a growth substrate is removed and a method of manufacturing the same.

Another object of the present invention is to provide a high efficiency light emitting diode having improved light extraction efficiency and a method of manufacturing the same.

The present invention provides a high efficiency light emitting diode and a method of manufacturing the same. A light emitting diode according to an aspect of the present invention, the support substrate; A semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer; A p-electrode layer ohmic contacting the p-type semiconductor layer between the support substrate and the semiconductor stacked structure; A transparent oxide layer is disposed on the semiconductor laminate structure and has a concave-convex pattern. The semiconductor laminate structure is formed to have a dislocation density of 5 × 10 ⁶ / cm 2 or less.

Due to the low dislocation density and the crystal quality of the semiconductor layers, the droop phenomenon of the light emitting diode generated as the current density increases. The semiconductor stack structure may be formed of semiconductor layers grown on a gallium nitride substrate. In addition, light may be extracted using the transparent oxide layer having the uneven pattern, thereby improving light extraction efficiency of the light emitting diode.

According to another aspect of the present invention, a light emitting diode includes: a support substrate; A semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer; A p-electrode layer ohmic contacting the p-type semiconductor layer between the support substrate and the semiconductor stacked structure; An n-electrode layer disposed between the support substrate and the semiconductor stack structure and connected to the n-type semiconductor layer through a through hole passing through the p-type semiconductor layer and the active layer; And an insulating layer insulating the p electrode layer and the n electrode layer, wherein the semiconductor laminate structure is formed to have a dislocation density of 5 × 10 ⁶ / cm 2 or less.

By disposing the p electrode layer and the n electrode layer between the semiconductor laminate structure and the support substrate, it is possible to prevent the light loss from occurring on the light emitting surface.

According to another aspect of the present invention, there is provided a light emitting diode manufacturing method, wherein a first gallium nitride layer, a sacrificial layer, and a second gallium nitride layer are formed on a gallium nitride substrate, and the sacrificial layer has a narrower bandgap than that of the gallium nitride layer. And a groove penetrating the second gallium nitride layer and the sacrificial layer, and growing a gallium nitride-based semiconductor layer on the second gallium nitride layer to form a semiconductor laminate structure, and on the semiconductor laminate structure Forming a support substrate, and etching the sacrificial layer to remove the gallium nitride substrate from the semiconductor laminate.

The sacrificial layer may be etched using light enhanced chemical etching techniques.

According to the present invention, a semiconductor laminate structure having a low dislocation density can be formed by growing semiconductor layers using a gallium nitride substrate as a growth substrate. Furthermore, a high efficiency light emitting diode can be provided by removing a gallium nitride substrate from the semiconductor laminate to manufacture a light emitting diode having a vertical structure. In addition, since the semiconductor layers grown on the gallium nitride substrate have a very low dislocation density, it is difficult to improve the light extraction efficiency because the conventional photochemical etching has a limitation in providing a rough surface. By using the transparent oxide layer having a light extraction efficiency of the light emitting diode can be improved.

Further, the gallium nitride substrate can be reused because the sacrificial layer is etched to separate the gallium nitride substrate from the semiconductor stack structure.

1 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.
2 to 6 are cross-sectional views illustrating a method of manufacturing a light emitting diode according to an embodiment of the present invention.
7 is a schematic view for explaining a gallium nitride substrate separation process according to an embodiment of the present invention.
8 is a cross-sectional view for describing a light emitting diode according to another exemplary embodiment of the present invention.
9 to 12 are cross-sectional views illustrating a method of manufacturing a light emitting diode according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the same reference numerals denote the same elements, and the width, length, thickness, and the like of the elements may be exaggerated for convenience.

1 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.

Referring to FIG. 1, the light emitting diode includes a support substrate 31, a semiconductor stack 30, a p-electrode layer 27, a bonding metal 33, a transparent oxide layer 35, and an n-electrode pad 37. Include. In addition, the light emitting diode may include a bonding pad 39.

The support substrate 31 is separated from the growth substrate for growing the compound semiconductor layers, and is a secondary substrate attached to the compound semiconductor layers that have already been grown. The support substrate 31 may be a conductive substrate, such as a metal substrate or a semiconductor substrate.

The semiconductor laminate 30 is positioned on the support substrate 31 and includes a p-type compound semiconductor layer 25, an active layer 23, and an n-type compound semiconductor layer 21. In this case, the p-type compound semiconductor layer 25 is positioned closer to the support substrate 31 side than the n-type compound semiconductor layer 21.

The n-type compound semiconductor layer 21, the active layer 23, and the p-type compound semiconductor layer 25 may be formed of a III-N series compound semiconductor, such as (Al, Ga, In) N semiconductor. The n-type compound semiconductor layer 21 and the p-type compound semiconductor layer 25 may be a single layer or multiple layers, respectively. For example, the n-type compound semiconductor layer 21 and / or the p-type compound semiconductor layer 25 may include a contact layer and a cladding layer, and may also include a superlattice layer. In addition, the active layer 23 may have a single quantum well structure or a multiple quantum well structure.

The semiconductor stacked structure 30 may be formed to have a dislocation density of 5 × 10 ⁶ / cm 2 or less. Semiconductor layers grown on sapphire substrates generally have a high dislocation density of 1 × 10 ⁸ / cm 2 or more. In contrast, the semiconductor laminate structure 30 according to the present invention uses a semiconductor layer 21, 23, 25 grown by using a gallium nitride substrate as a growth substrate, and thus has a low dislocation density of 5 × 10 ⁶ / cm 2 or less. It can be formed to have. The lower limit of the dislocation density is not particularly limited, but may be 1 × 10 ⁴ / cm 2 or more or 1 × 10 ⁶ / cm 2 or more. By lowering the dislocation density in the semiconductor laminate 30, droops generated as the current increases can be alleviated.

The p-electrode layer 27 is positioned between the p-type compound semiconductor layer 25 and the support substrate 31. The p-electrode layer 27 is in ohmic contact with the p-type compound semiconductor layer 25 and may include a reflective metal layer and a barrier metal layer. The reflective metal layer may include a reflective layer such as Ag. In addition, the barrier metal layer covers the reflective metal layer to prevent diffusion of the metal material, such as Ag, of the reflective metal layer. The barrier metal layer may comprise a Ni layer, for example.

Meanwhile, the support substrate 31 may be bonded to the p-electrode layer 27 through the bonding metal 33. The bonding metal 33 may be formed using eutectic bonding with Au-Sn, for example. Alternatively, the support substrate 31 may be formed on the p-electrode layer 27 using, for example, a plating technique.

The bonding pad 39 is formed below the support substrate 31. The bonding pad 39 may be formed of a metal material suitable for eutectic bonding such as Au-Sn. The bonding pad 39 is used when the light emitting diode is mounted on a printed circuit board, a lead frame, or the like, and is formed of a metal material having high thermal conductivity to improve heat dissipation characteristics of the light emitting diode.

Meanwhile, the transparent oxide layer 35 may be positioned on the semiconductor stacked structure 30, that is, on the n-type compound semiconductor layer 21. The transparent oxide layer 35 may be patterned to have an uneven pattern on the surface thereof. The transparent oxide layer 35 may be formed of, for example, a conductive oxide layer such as ZnO or ITO or an insulating oxide layer such as SiO 2. The transparent oxide layer 35 may emit light generated in the semiconductor stacked structure 30 by the uneven pattern to the outside.

Meanwhile, the n-electrode pad 37 may be located on the transparent oxide layer 35. The n-electrode pad 37 may be electrically connected to the n-type compound semiconductor layer 21 through the transparent oxide layer 35. Alternatively, the n-electrode pad 37 may directly contact the n-type compound semiconductor layer 21, and for this purpose, the n-type compound semiconductor layer 21 is exposed to the transparent oxide layer 35. Openings may be formed.

In the present embodiment, the transparent oxide layer 35 having the concave-convex pattern is positioned on the n-type compound semiconductor layer 21, but instead of the transparent oxide layer 35 or in the transparent oxide layer 35. In addition, a rough surface or an uneven pattern for light extraction may be formed on the surface of the n-type compound semiconductor layer 21.

2 to 6 are cross-sectional views illustrating a method of manufacturing a light emitting diode according to an embodiment of the present invention.

Referring to FIG. 2, a first gallium nitride layer 13, a sacrificial layer 15, and a second gallium nitride layer 17 are grown on the gallium nitride substrate 11. Here, the sacrificial layer 15 may be formed of a gallium nitride-based layer having a narrower band gap than the first gallium nitride layer 13, for example, InGaN. The first gallium nitride layer 13 is formed of undoped-GaN without intentional doping of impurities, and the sacrificial layer 15 may be formed by doping n-type impurities such as Si. The first gallium nitride layer 13 functions to prevent the gallium nitride substrate 11 from being damaged when the sacrificial layer 15 is etched.

Meanwhile, the second gallium nitride layer 17 may be formed of undoped-GaN without intentional doping of impurities, and may be used as a seed layer for growth of epitaxial layers in the future.

Referring to FIG. 3, the second gallium nitride layer 17 and the sacrificial layer 15 are patterned to form grooves 19. The groove 19 may pass through the first gallium nitride layer 13. The groove 19 may be formed using a dry etching technique or a laser scribing technique. Since the second gallium nitride layer 17 and the first gallium nitride layer 17 are used, the depth of the groove 19 is greater than the thickness of the sacrificial layer 15.

The groove 19 may be formed in plural to be arranged in a stripe shape, or may be connected to each other in a mesh shape. The spacing between the grooves 19 and 19 is preferably about 1 cm or less. Further, the groove 19 may be formed to correspond to the chip size of the light emitting diode, or may be formed more densely.

Referring to FIG. 4, the gallium nitride-based n-type semiconductor layer 21, the gallium nitride-based active layer 23, and the gallium nitride-based p-type semiconductor layer 25 are formed on the second gallium nitride layer 17. A semiconductor laminate structure 30 is formed. The n-type semiconductor layer 21 is grown on the second gallium nitride layer 17 and covers the groove 19 by lateral growth. The active layer 23 and the p-type semiconductor layer 25 are grown on the n-type semiconductor layer 21.

The n-type and p-type semiconductor layers 21 and 25 may be formed in a single layer or multiple layers, respectively. In addition, the active layer 23 may be formed in a single quantum well structure or a multiple quantum well structure. By growing on the gallium nitride substrate 11, the semiconductor layers 21, 23, and 25 may be formed to have a dislocation density of about 5 × 10 ⁶ / cm 2 or less.

The first and second gallium nitride layers 13 and 17, the sacrificial layer 15, and the compound semiconductor layers 21, 23 and 25 may be metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy. MBE) and the like can be grown by.

Referring to FIG. 5, a p electrode layer 27 is formed on the semiconductor stacked structure 30. The p electrode layer 27 makes ohmic contact with the p-type semiconductor layer 25. In addition, the p-electrode layer 27 may include a reflective metal layer and a barrier metal layer.

Subsequently, a support substrate 31 is attached on the p electrode layer 27. The support substrate 31 may be manufactured separately from the semiconductor stack structure 30 and then bonded to the p electrode layer 27 through the bonding metal 33. Alternatively, the support substrate 31 may be formed by plating on the p electrode layer 27. The support substrate 31 may be a conductive substrate, such as a metal or semiconductor substrate.

Referring to FIG. 6, after the support substrate 31 is formed, the gallium nitride substrate 11 is removed, and the second gallium nitride layer 17 is removed to form the n-type semiconductor layer of the semiconductor stacked structure 30 ( 21) The surface is exposed. The second gallium nitride layer 17 may be removed using dry etching or polishing or polishing techniques.

The gallium nitride substrate 11 may be separated from the semiconductor stacked structure 30 using light enhanced chemical etching techniques. 7 is a schematic view for explaining a separation process of the gallium nitride substrate 11.

Referring to FIG. 7, first, as shown in FIG. 5, after the support substrate 31 is formed, the entire object including the gallium nitride substrate 11 is placed in the water tank 100 containing the solution 110 of KOH or NaOH. . Meanwhile, light is irradiated through the gallium nitride substrate 11 using the UV lamp 40. At this time, except for the light L2 having the wavelength to be absorbed by the sacrificial layer 15 among the light L1 generated by the UV lamp 40, the light having the wavelength to be absorbed by the gallium nitride substrate 11 is filtered by the filter 45. Filter in advance using. The filter 45 may be formed by, for example, growing a gallium nitride layer 43 on the sapphire substrate 41. Therefore, the gallium nitride layer 43 blocks light of the wavelength absorbed by the gallium nitride substrate 11 in advance.

Accordingly, the light L2 passing through the gallium nitride substrate 11 is irradiated to the sacrificial layer 15 through the gallium nitride substrate 11 in the water tank 100. The sacrificial layer 15 has side surfaces exposed to the inner wall of the groove 19 and absorbs the light L2. Accordingly, the sacrificial layer 15 is etched by the KOH or NaOH solution 110 penetrating into the groove 19.

Instead of the UV lamp 40, light may be irradiated using a laser or a light emitting diode that transmits light having a specific wavelength, that is, a gallium nitride substrate 11 and emits light having a wavelength absorbed by the sacrificial layer 15. .

According to the present exemplary embodiment, since the grooves 19 are formed on the substrate 11, the sacrificial layer 15 is etched in the inner region as well as the edge region of the substrate 11. Therefore, even when the size of the substrate 11 is relatively large, the gallium nitride substrate 11 can be easily separated from the semiconductor laminate structure 30. Furthermore, each time of the sacrificial layer 15 may be appropriately adjusted by adjusting the gap between the groove 19 and the groove 19.

After the gallium nitride substrate 11 is removed, as described above, the second gallium nitride layer 17 may be removed. Accordingly, the surface of the n-type semiconductor layer 21 is exposed, and the n-type semiconductor layer 21 may be partially etched to form a rough surface or an uneven pattern. In addition, an uneven pattern may be formed by depositing and patterning a transparent oxide layer (35 in FIG. 1) on the n-type semiconductor layer 21. Thereafter, the n electrode pad 37 and the bonding pad 39 may be formed, and the light emitting diode of FIG. 1 is completed by dividing into individual light emitting diodes.

When the conventional sapphire substrate is used as a growth substrate, since the sapphire substrate has different physical properties from those of the semiconductor layers grown thereon, the sapphire substrate can be easily separated by using an interface between the substrate and the semiconductor layers. However, when the gallium nitride substrate 11 is used as a growth substrate, since the gallium nitride substrate 11 and the semiconductor layers 21, 23, 25 grown thereon are the same material, the substrate 11 and the semiconductor layers It is difficult to separate the substrate 11 using the interface between the 21, 23, and 25.

Accordingly, in the present invention, the gallium nitride substrate 11 is separated using the sacrificial layer 15. Therefore, the gallium nitride substrate 11 may be separated from the semiconductor stacked structure 30 without being damaged. Since the separated gallium nitride substrate 11 is not damaged, it can be reused as a growth substrate.

8 is a cross-sectional view for describing a light emitting diode according to still another embodiment of the present invention.

Referring to FIG. 8, the light emitting diode includes a support substrate 51, a semiconductor stack 30, a p-electrode layer 27a, an insulating layer 29, an n-electrode layer 47, a bonding metal 53, and a transparent oxide layer. 55 and a p-electrode pad 57. In addition, the light emitting diode may include a bonding pad 59.

Here, since the semiconductor laminate structure 30, the support substrate 51, the bonding metal 53, the transparent oxide layer 55, and the bonding pad 59 are similar to those of the light emitting diode of FIG. 1, a detailed description thereof will be omitted. However, the semiconductor laminate 30 may be located on a portion of the support substrate 51. That is, the support substrate 51 has a relatively large area compared to the semiconductor laminate structure 30, and the semiconductor laminate structure 30 is located on a portion of the support substrate 51. In addition, the semiconductor laminate 30 has a through hole 30a penetrating through the p-type semiconductor layer 25 and the active layer 23. One or more through holes 30a may be formed, and the plurality of through holes 30a may be evenly distributed.

The p-electrode layer 27a may be in ohmic contact with the p-type semiconductor layer 25 similarly to the p-electrode layer 27 described with reference to FIG. 1, and may include a reflective metal layer and a barrier metal layer. The p-electrode layer 27a contacts the p-type semiconductor layer 25 and has an opening that exposes the through hole 30a.

Meanwhile, the n electrode layer 47 is positioned between the semiconductor laminate structure 30 and the support substrate 51 and electrically connected to the n-type semiconductor layer 21 through the through hole 30a. The n electrode layer 47 is spaced apart from the p electrode layer 27a, the p-type semiconductor layer 25, and the active layer 23.

The insulating layer 29 is disposed between the n electrode layer 47 and the p electrode layer 27a to separate the n electrode layer 47 from the p electrode layer 27a. For example, the insulating layer 29 covers the lower surface of the p electrode layer 27a. In addition, the insulating layer 29 covers the inner wall of the through hole 30a to insulate the p-type semiconductor layer 25 and the active layer 23 from the n electrode layer 47.

Meanwhile, the p electrode layer 27a extends outside the lower region of the semiconductor stack 30, and the p electrode pad 57 is positioned on the extended p electrode layer 27a.

According to the present embodiment, the n electrode layer 47 is positioned between the support substrate 51 and the semiconductor stacked structure 30. Therefore, it is possible to prevent the light emitted through the transparent oxide layer 55 from the active layer 23 from being lost by the n electrode pad 37 as shown in FIG. 1. Furthermore, when the plurality of through holes 30a are used, the n-electrode layer 47 may contact at a plurality of points of the n-type semiconductor layer 21, so that the current may be evenly distributed in the light emitting diode.

9 to 12 are cross-sectional views illustrating a method of manufacturing a light emitting diode according to still another embodiment of the present invention.

Referring to FIG. 9, as described with reference to FIGS. 2 to 4, the first gallium nitride layer 13, the sacrificial layer 15, and the second gallium nitride layer 17 are formed on the gallium nitride substrate 11. A semiconductor laminate structure 30 including a n-type semiconductor layer 21, an active layer 23, and a p-type semiconductor layer 25 on the second gallium nitride layer 17. Grow).

After that, a p-electrode layer 27a is formed on the semiconductor laminate 30. The p electrode layer 27a is formed to have an opening. Subsequently, the semiconductor stacked structure 30 is patterned to form a through hole 30a penetrating through the second semiconductor layer 25 and the active layer 23. The p electrode layer 27a may be formed after the through hole 30a is formed. One or more through-holes 30a may be formed in one LED area.

Referring to FIG. 10, an insulating layer 29 covering the p electrode layer 27a is formed. The insulating layer 29 may also cover the inner wall of the through hole 30a. The insulating layer 29 may be formed of a silicon oxide film or a silicon nitride film, and may be formed to be a distributed Bragg reflector by alternately depositing SiO 2 and TiO 2. The insulating layer 29 has an opening that exposes the n-type semiconductor layer 21 at the bottom of the through hole 30a.

The n electrode layer 47 is formed on the insulating layer 29. The n electrode layer 47 is electrically connected to the n-type semiconductor layer 21 through the through hole 30a. The n electrode layer 47 is electrically insulated from the p electrode layer 27a by the insulating layer 29. The n electrode layer 47 is also spaced apart from the p-type semiconductor layer 25 and the active layer 23.

Thereafter, a supporting substrate 51 is attached on the n electrode layer 47. The support substrate 51 may be manufactured separately from the semiconductor stack structure 30, and then bonded to the n electrode layer 47 through the bonding metal 53. Alternatively, the support substrate 51 may be plated on the n electrode layer 47. The support substrate 51 may be a conductive substrate, such as a metal or semiconductor substrate.

Referring to FIG. 11, after the supporting substrate 51 is formed, as described with reference to FIG. 6, the gallium nitride substrate 11 is removed and the second gallium nitride layer 17 is removed to form a semiconductor laminate. The surface of the n-type semiconductor layer 21 of 30 is exposed.

As described with reference to FIG. 7, the gallium nitride substrate 11 may be separated from the semiconductor stacked structure 30 using light enhanced chemical etching techniques, and detailed descriptions thereof will be omitted to avoid duplication.

Referring to FIG. 12, a transparent oxide layer 55 having an uneven pattern is formed on the exposed n-type semiconductor layer 21. Meanwhile, a portion of the semiconductor stacked structure 30 is removed to expose the p electrode layer 27a, and the p electrode pad 57 is formed on the exposed p electrode layer 27a as shown in FIG. 8. In addition, a bonding pad 59 may be formed below the support substrate 51, and the light emitting diode of FIG. 8 is completed by dividing into individual light emitting diodes.

According to the present embodiment, the n-electrode layer 47 is disposed between the semiconductor laminate structure 30 and the support substrate 51 to provide a light emitting diode capable of preventing light loss on the light emitting surface.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments or constructions. Various changes and modifications may be made without departing from the spirit and scope of the invention. have.

Claims (20)

A support substrate;
A semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer;
A p-electrode layer ohmic contacting the p-type semiconductor layer between the support substrate and the semiconductor stacked structure;
A transparent oxide layer disposed on the semiconductor laminate structure and having an uneven pattern,
The semiconductor laminate structure is a light emitting diode formed to have a dislocation density of 5 × 10 ⁶ / ㎠ or less. The method according to claim 1,
The semiconductor laminate structure is a light emitting diode formed of semiconductor layers grown on a gallium nitride substrate. The method according to claim 1,
And an n electrode pad on the transparent oxide layer and electrically connected to the n-type semiconductor layer. The method according to claim 1,
An n-electrode layer disposed between the support substrate and the semiconductor stack structure and connected to the n-type semiconductor layer through a through hole passing through the p-type semiconductor layer and the active layer; And
The light emitting diode further comprises an insulating layer insulating the p electrode layer and the n electrode layer. The method of claim 4,
The light emitting diode further comprises a p electrode pad formed on the p electrode layer. A support substrate;
A semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer;
A p-electrode layer ohmic contacting the p-type semiconductor layer between the support substrate and the semiconductor stacked structure;
An n-electrode layer disposed between the support substrate and the semiconductor stack structure and connected to the n-type semiconductor layer through a through hole passing through the p-type semiconductor layer and the active layer; And
An insulating layer insulating the p electrode layer and the n electrode layer;
The semiconductor laminate structure is a light emitting diode formed to have a dislocation density of 5 × 10 ⁶ / ㎠ or less. The method of claim 6,
The light emitting diode further comprises a bonding pad located under the support substrate. The method of claim 6,
The light emitting diode further comprises a p electrode pad formed on the p electrode layer. The method of claim 6,
And the insulating layer insulates the n electrode layer from the p-type semiconductor layer and the active layer in the through hole. The method of claim 9,
The light emitting diode further comprising a transparent oxide layer disposed on the semiconductor laminate structure and having an uneven pattern. Forming a first gallium nitride layer, a sacrificial layer, and a second gallium nitride layer on the gallium nitride substrate, the sacrificial layer having a narrower bandgap than the gallium nitride layer;
Forming a groove penetrating the second gallium nitride layer and the sacrificial layer,
Growing a gallium nitride-based semiconductor layer on the second gallium nitride layer to form a semiconductor laminate structure,
Forming a support substrate on the semiconductor laminate structure,
Etching the sacrificial layer to remove the gallium nitride substrate from the semiconductor laminate. The method of claim 11,
The sacrificial layer is formed of InGaN light emitting diode manufacturing method. The method of claim 11,
And etching the sacrificial layer is performed using a light enhanced chemical etching technique. The method according to claim 13,
Etching the sacrificial layer is performed by irradiating light to the sacrificial layer through the gallium nitride substrate in a KOH or NaOH solution. The method of claim 11,
After the gallium nitride substrate is removed, further comprising forming a transparent oxide layer having an uneven pattern on the n-type semiconductor layer. The method of claim 11,
Before forming the support substrate, further comprising forming a p-type electrode layer in ohmic contact with the semiconductor laminate structure,
The semiconductor laminate structure includes a gallium nitride-based n-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based p-type semiconductor layer,
The p electrode layer is ohmic contact with the p-type semiconductor layer manufacturing method. 18. The method of claim 16,
Before forming the support substrate,
Forming through holes penetrating the p-type semiconductor layer and the active layer;
Forming an insulating layer covering the inner wall of the through hole and the p electrode layer;
And forming an n electrode layer electrically connected to the n-type semiconductor layer through the through hole. 18. The method of claim 17,
After removing the gallium nitride substrate, a portion of the semiconductor laminate structure is removed to expose the p electrode layer,
And forming a p electrode pad on the p electrode layer. The method of claim 11,
The groove is formed in a mesh shape or a plurality of light emitting diode manufacturing method formed in a stripe shape. The method of claim 11,
The method of manufacturing a light emitting diode further comprises forming a bonding pad under the support substrate.

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