KR20130097190A - 간섭 디스플레이 장치에서의 전하 중성 전극의 작동 및 교정 - Google Patents
간섭 디스플레이 장치에서의 전하 중성 전극의 작동 및 교정 Download PDFInfo
- Publication number
- KR20130097190A KR20130097190A KR1020137006564A KR20137006564A KR20130097190A KR 20130097190 A KR20130097190 A KR 20130097190A KR 1020137006564 A KR1020137006564 A KR 1020137006564A KR 20137006564 A KR20137006564 A KR 20137006564A KR 20130097190 A KR20130097190 A KR 20130097190A
- Authority
- KR
- South Korea
- Prior art keywords
- electrode
- charge
- intermediate electrode
- voltage
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000007935 neutral effect Effects 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 167
- 230000005684 electric field Effects 0.000 claims abstract description 73
- 230000000295 complement effect Effects 0.000 claims description 68
- 230000003287 optical effect Effects 0.000 claims description 26
- 230000008859 change Effects 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000004891 communication Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims 1
- 230000002452 interceptive effect Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 171
- 239000002131 composite material Substances 0.000 description 49
- 238000010586 diagram Methods 0.000 description 47
- 239000000463 material Substances 0.000 description 23
- 239000000758 substrate Substances 0.000 description 21
- 239000003990 capacitor Substances 0.000 description 20
- 230000006870 function Effects 0.000 description 15
- 238000000151 deposition Methods 0.000 description 12
- 239000006096 absorbing agent Substances 0.000 description 10
- 238000013461 design Methods 0.000 description 10
- 230000036961 partial effect Effects 0.000 description 10
- 230000002829 reductive effect Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000000059 patterning Methods 0.000 description 9
- 230000008093 supporting effect Effects 0.000 description 9
- 238000000926 separation method Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 7
- 230000002787 reinforcement Effects 0.000 description 7
- 239000003086 colorant Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000003750 conditioning effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000001413 cellular effect Effects 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 230000003014 reinforcing effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- IRLPACMLTUPBCL-KQYNXXCUSA-N 5'-adenylyl sulfate Chemical compound C1=NC=2C(N)=NC=NC=2N1[C@@H]1O[C@H](COP(O)(=O)OS(O)(=O)=O)[C@@H](O)[C@H]1O IRLPACMLTUPBCL-KQYNXXCUSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009638 autodisplay Methods 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- OJIJEKBXJYRIBZ-UHFFFAOYSA-N cadmium nickel Chemical compound [Ni].[Cd] OJIJEKBXJYRIBZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- VNTLIPZTSJSULJ-UHFFFAOYSA-N chromium molybdenum Chemical compound [Cr].[Mo] VNTLIPZTSJSULJ-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 230000001976 improved effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007666 vacuum forming Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/3433—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices
- G09G3/3466—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices based on interferometric effect
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/06—Details of flat display driving waveforms
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0252—Improving the response speed
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/06—Adjustment of display parameters
- G09G2320/0693—Calibration of display systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Nonlinear Science (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Micromachines (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US37453910P | 2010-08-17 | 2010-08-17 | |
| US61/374,539 | 2010-08-17 | ||
| PCT/US2011/047783 WO2012024235A1 (en) | 2010-08-17 | 2011-08-15 | Actuation and calibration of a charge neutral electrode in an interferometric display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20130097190A true KR20130097190A (ko) | 2013-09-02 |
Family
ID=44504292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020137006564A Withdrawn KR20130097190A (ko) | 2010-08-17 | 2011-08-15 | 간섭 디스플레이 장치에서의 전하 중성 전극의 작동 및 교정 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20120044562A1 (https=) |
| EP (1) | EP2606484A1 (https=) |
| JP (1) | JP5596234B2 (https=) |
| KR (1) | KR20130097190A (https=) |
| CN (1) | CN103119639A (https=) |
| IN (1) | IN2013CN01109A (https=) |
| TW (1) | TW201221464A (https=) |
| WO (1) | WO2012024235A1 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7990604B2 (en) | 2009-06-15 | 2011-08-02 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator |
| EP2606485A1 (en) | 2010-08-17 | 2013-06-26 | Qualcomm Mems Technologies, Inc. | Actuation and calibration of a charge neutral electrode in an interferometric display device |
| US9035934B2 (en) * | 2012-05-02 | 2015-05-19 | Qualcomm Mems Technologies, Inc. | Voltage biased pull analog interferometric modulator with charge injection control |
| US20140063022A1 (en) * | 2012-08-31 | 2014-03-06 | Qualcomm Mems Technologies, Inc. | Electromechanical systems device |
| US9285889B2 (en) * | 2012-12-10 | 2016-03-15 | Intel Corporation | Electrode arrangement for a keyboard proximity and tracking sensor |
| GB2513744B (en) * | 2012-12-10 | 2020-10-21 | Intel Corp | Electrode arrangement for a keyboard proximity and tracking sensor |
| US20140267443A1 (en) * | 2013-03-14 | 2014-09-18 | Qualcomm Mems Technologies, Inc. | Electromechanical systems device with segmented electrodes |
| US9513529B2 (en) * | 2013-08-20 | 2016-12-06 | Intel Corporation | Display apparatus including MEMS devices |
| US20150070747A1 (en) * | 2013-09-09 | 2015-03-12 | Qualcomm Mems Technologies, Inc. | Display element reset using polarity reversal |
| US20170075103A1 (en) * | 2015-09-11 | 2017-03-16 | Qualcomm Mems Technologies, Inc. | Electromechanical systems device with segmented electrodes and thin film transistors for increasing stable range |
| CN106125028B (zh) * | 2016-06-14 | 2018-12-18 | 中国科学院电子学研究所 | 电场传感器动态测试标定装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7304784B2 (en) * | 2004-09-27 | 2007-12-04 | Idc, Llc | Reflective display device having viewable display on both sides |
| BRPI0509575A (pt) * | 2004-09-27 | 2007-10-09 | Idc Llc | método e dispositivo para modulação de luz interferométrica de multi-estados |
| US7372613B2 (en) * | 2004-09-27 | 2008-05-13 | Idc, Llc | Method and device for multistate interferometric light modulation |
| US7403180B1 (en) * | 2007-01-29 | 2008-07-22 | Qualcomm Mems Technologies, Inc. | Hybrid color synthesis for multistate reflective modulator displays |
-
2011
- 2011-08-15 IN IN1109CHN2013 patent/IN2013CN01109A/en unknown
- 2011-08-15 EP EP11745907.3A patent/EP2606484A1/en not_active Withdrawn
- 2011-08-15 WO PCT/US2011/047783 patent/WO2012024235A1/en not_active Ceased
- 2011-08-15 CN CN2011800447838A patent/CN103119639A/zh active Pending
- 2011-08-15 JP JP2013524915A patent/JP5596234B2/ja not_active Expired - Fee Related
- 2011-08-15 KR KR1020137006564A patent/KR20130097190A/ko not_active Withdrawn
- 2011-08-16 US US13/211,165 patent/US20120044562A1/en not_active Abandoned
- 2011-08-17 TW TW100129449A patent/TW201221464A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP5596234B2 (ja) | 2014-09-24 |
| WO2012024235A1 (en) | 2012-02-23 |
| CN103119639A (zh) | 2013-05-22 |
| JP2013535707A (ja) | 2013-09-12 |
| TW201221464A (en) | 2012-06-01 |
| EP2606484A1 (en) | 2013-06-26 |
| IN2013CN01109A (https=) | 2015-07-31 |
| US20120044562A1 (en) | 2012-02-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI497110B (zh) | 類比干涉調變器 | |
| KR20130097190A (ko) | 간섭 디스플레이 장치에서의 전하 중성 전극의 작동 및 교정 | |
| KR20130091763A (ko) | 간섭 디스플레이 장치에서의 전하 중성 전극의 작동 및 교정 | |
| KR101649972B1 (ko) | Imod 디스플레이를 위한 유전체 강화된 미러 | |
| TW201319886A (zh) | 與顯示器資料更新整合之觸碰感測 | |
| KR20130038231A (ko) | 디스플레이의 리프레시 레이트의 증가를 가능하게 하기 위한 라인 승산 | |
| KR20130130756A (ko) | 전기기계식 간섭 변조기 디바이스 | |
| KR20130100232A (ko) | 전기 기계 디바이스의 기계층 및 그 형성 방법 | |
| KR20140031221A (ko) | 단일 인덕터로부터 포지티브 및 네가티브 전압들을 제공하기 위한 시스템 및 방법 | |
| KR20130106383A (ko) | 간섭 디스플레이 장치 | |
| TWI589927B (zh) | 用於驅動一顯示元件之設備、用於定位可相對於一顯示器中之一或多個固定導電層移動之一可移動導電層之方法、用於驅動包含一可移動導電層及一或多個固定導電層之一顯示器之設備及用於定位可相對於一顯示器中之一或多個固定導電層移動之一可移動導電層之電腦程式產品 | |
| KR20140026407A (ko) | 비활성 더미 화소들 | |
| CN103460112A (zh) | 用于调谐多色彩显示器的系统和方法 | |
| US20130135184A1 (en) | Encapsulated arrays of electromechanical systems devices | |
| US20130100065A1 (en) | Electromechanical systems variable capacitance device | |
| KR20140027324A (ko) | 기계층 및 기계층을 제조하는 방법들 | |
| JP2014515836A (ja) | ピクセルビア(pixelvia)およびそれを形成する方法 | |
| US8786592B2 (en) | Methods and systems for energy recovery in a display | |
| KR20140106636A (ko) | 디스플레이를 위한 구동 방식 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20130314 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |