KR20130096365A - Two pieces graphite chuck - Google Patents

Two pieces graphite chuck Download PDF

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Publication number
KR20130096365A
KR20130096365A KR1020120017752A KR20120017752A KR20130096365A KR 20130096365 A KR20130096365 A KR 20130096365A KR 1020120017752 A KR1020120017752 A KR 1020120017752A KR 20120017752 A KR20120017752 A KR 20120017752A KR 20130096365 A KR20130096365 A KR 20130096365A
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KR
South Korea
Prior art keywords
chuck
graphite
rod
graphite chuck
sub
Prior art date
Application number
KR1020120017752A
Other languages
Korean (ko)
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KR101302231B1 (en
Inventor
정재연
조인성
신창근
구민예
최진석
Original Assignee
전북대학교산학협력단
최진석
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Application filed by 전북대학교산학협력단, 최진석 filed Critical 전북대학교산학협력단
Priority to KR1020120017752A priority Critical patent/KR101302231B1/en
Publication of KR20130096365A publication Critical patent/KR20130096365A/en
Application granted granted Critical
Publication of KR101302231B1 publication Critical patent/KR101302231B1/en

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE: An assembly-type graphite chuck is provided to reduce the consumption of a discarded graphite chuck by manufacturing two separate parts of the graphite chuck. CONSTITUTION: A polysilicon rod is manufactured by thermal decomposition of trichlorosilane on a slim rod (40). A graphite chuck suitable to attach the slim rod to an electrode (20) is divided into two parts. The slim rod is connected to a bridge. The graphite chuck includes a sub chuck to which the slim rod is connected on the upper part and a main chuck (61) to which the electrode is connected on the lower part.

Description

Two Pieces Graphite Chuck

The present invention relates to an assembled graphite chuck that is a consumable part for manufacturing high purity polysilicon rods required for manufacturing a solar power module. More specifically, the graphite chuck is separated into two pieces. The present invention relates to an assembled graphite chuck that can dramatically reduce the consumption of the graphite chuck discarded by assembling and using the same.

   The solar power generation system has been spotlighted as pollution-free green energy, and has been expanding dramatically worldwide. As a result, continuous research and development has been carried out. It is important to preoccupy production technology. Polysilicon is an essential material for the production of photovoltaic modules, and its domestic production capacity is estimated to be 130,000 tons in 2013, making it the world's No. 1 production capacity. As a result, demand for high-purity graphite chucks is also rapidly increasing, and domestic demand is expected to grow to about 2,000 tons in 2013. Therefore, it is urgent to secure development and mass production technology for high-purity graphite chucks.

     At present, domestic suppliers of high-purity graphite chucks are small and have no independent production technology. If foreign companies succeed in localizing their products, it is believed that the effect of import substitution and export of hundreds of billions is possible. On the other hand, as the rapid growth continues, it is expected that material prices will rise and product prices will decrease as global competition intensifies. In order to preoccupy, the method of dramatically reducing the consumption of graphite chuck, which is a material, is absolutely necessary.

     The Siemens method is well known as a method of manufacturing high purity polysilicon used as a raw material for semiconductor devices or solar cells. When a mixed gas containing trichlorosilane (TCS) and hydrogen is mixed into a chemical vapor deposition reactor such as [FIG. 1] disclosed in Korean Unexamined Patent Publication No. 10-2011-0113804, a heated silicon seed rod The mixed gas in contact with (1) is pyrolyzed into silicon, hydrogen and chlorine gas. At this time, the pyrolyzed silicon is deposited on the seed site of the seed rod surface to form solid particles, and the reaction is repeatedly performed to obtain polysilicon 3 of the solid mass. As shown in FIG. 1, the silicon seed rod 1 is composed of two rod-shaped rods and a bridge 2 connecting rods and rods to the rod tops, and having a U-shaped portion at the bottom of the silicon reactor. It is assembled in an inverted form. The lower part of the rod 1 is fixed to an electrode 4 installed at the bottom of the silicon reactor, and a current flows through the electrode 4 so that current flows to the rod 1, the bridge 2, and the load again. And eventually the entire silicon seed rod is heated. In this case, the temperature of the silicon seed rod 1 may be adjusted by adjusting the amount of current flowing.

     However, as shown in FIG. 3, the one-piece graphite chuck composed of one piece is attached to the electrode 4, which is a consumable part that is discarded after one use. As the amount of graphite chucks increases, the amount of graphite chucks discarded increases, resulting in waste of resources.

The inventors have confirmed that the above problems can be overcome by dividing the shape of the graphite chuck into a separate type from a separate type, thereby completing the present invention.

The present invention has been made to solve the problems of the prior art as described above, discarded by replacing the graphite chuck, a consumable part of the electrode for manufacturing a high-purity polysilicon rod by replacing the one piece in one piece with a separate piece of two pieces. In addition to significantly reducing the consumption of graphite chucks, it is easy to replace only the sub chucks during the replacement operation, and the purpose is to provide a prefabricated graphite chuck that can reduce the fish cost of polysilicon rods. .

The present invention to achieve the above object,

In manufacturing the polysilicon rod 50 by pyrolysis of trichlorosilane on the slim rod 40, the graphite chuck 60 suitable for attaching the slim rod 40 to the electrode 20 is divided into two. It provides an assembled graphite chuck characterized in that.

     In another aspect, the present invention, the slim rod 40 provides an assembled graphite chuck, characterized in that the elongated rod is connected by a bridge.

     In addition, the present invention, the graphite chuck 60 is characterized in that the sub chuck 62 is formed in the upper portion to which the slim rod 40 is connected, and the main chuck 61 is formed in the lower portion to which the electrode 20 is connected. An assembled graphite chuck is provided.

     The present invention also provides an assembled graphite chuck, wherein the main chuck 61 is larger than the sub chuck 62.

     In addition, the present invention provides an assembled graphite chuck, characterized in that the coupling portion 70 is formed on the upper portion of the main chuck 61 to be coupled to the sub chuck 62.

Finally, the present invention provides the assembled graphite chuck, characterized in that the coupling portion 70 is formed in the form of a light beam lower side (上 廣 下 狹) or is formed of a screw.

The assembled graphite chuck according to the present invention is used after assembling the graphite chuck, which is a disposable consumable part for manufacturing high-purity polysilicon rods required for the production of solar power modules, from one piece to two pieces, and then assembled. By reducing the consumption of the graphite chuck to be discarded by drastically, it is simple to replace only the sub chuck during the replacement work, it is also effective in reducing the cost of fish of polysilicon rod.

1 is a cross-sectional configuration diagram of a silicon reactor according to the related art.
2 is a cross-sectional configuration diagram of a silicon reactor according to the present invention.
Figure 3 is a cross-sectional configuration of the one-piece graphite chuck of the conventional invention.
Figure 4 is a cross-sectional configuration of the two-piece discrete graphite chuck according to the present invention.

  Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. However, the examples illustrated below are not intended to limit the scope of the present invention, but are provided to fully explain the present invention to those skilled in the art. 2 is a cross-sectional configuration diagram of a silicon reactor according to one embodiment of the present invention. Referring to FIG. 2, in order to manufacture the high-purity polysilicon rod 50, first, a slender and long rod is charged in a state in which a silicon gas reactor is filled with a mixed gas 30 containing trichlorosilane (TCS) and hydrogen. (Slim Rod) 40 as a bridge connects the power source 10 and chemically deposits silicon decomposed under high temperature, wherein the high purity graphite chuck connecting the power source 10 and the slim rod 40 is an electrode. Used as a consumable part of 20.

     As shown in FIG. 3, the conventional graphite chuck 60 is a one-piece consumable part composed of one piece of graphite chuck to obtain a polysilicon rod 50 manufactured by depositing silicon on the slim rod 40. When disassembling, the slim rod 40 and the connection part must be damaged and discarded. In this case, since the entirety of the graphite chuck 60 is not to be disposed, the amount of discarding the graphite chuck 60 increases as the amount of the polysilicon rod 50 increases.

     In the present invention, to solve the above problems, as shown in FIG. 4, the graphite chuck 60 is divided into two entities, a main chuck 61 and a sub chuck 62. In addition, the sub chuck 62 can be firmly coupled to the upper part of the main chuck 61 by forming a coupling part 70 to allow the sub chuck 62 to be coupled to the upper part of the main chuck 61. In addition, the coupling part 70 is formed in the form of the upper and lower straits (上 廣 下 나사) or is formed of a screw so that the sub chuck 62 can be easily inserted or separated from the main chuck 61.

     Thus, a separate graphite chuck divided into two objects is assembled into one, the slim rod 40 and the graphite chuck 60 are combined, and the polysilicon rod 50 is manufactured by depositing silicon on the slim rod 40. Production of the polysilicon rod 50 can be obtained by separating the graphite chuck (60) polysilicon rod (50). When the graphite chuck 60 is separated, the sub chuck 62 portion is more damaged than the main chuck 61 portion, so that the size of the sub chuck 62 portion smaller than the main chuck 61 portion reduces the consumption of the graphite chuck. It is advantageous to reduce.

     The graphite chuck 60 separates and discards only the small sub chuck 62 formed thereon from the main chuck 61 after being used once, replaces it with a new sub chuck 62, and then replaces the main chuck 61 again. Used in conjunction with In this way, the consumption of the graphite chuck that is discarded can be drastically reduced, and since only the sub chuck can be simply replaced during the replacement work, the work is simple and the production cost of the polysilicon rod can be reduced.

Although only the specific examples of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical spirit of the present invention, and such modifications and modifications belong to the appended claims. .

10: power
20: Electrode
30: mixed gas
40: slim rod
50: silicon rod
60: graphite chuck
61: main chuck
62: sub chuck
70:

Claims (8)

In manufacturing the polysilicon rod 50 by pyrolysis of trichlorosilane on the slim rod 40,
Prefabricated graphite chuck, characterized in that the graphite chuck 60 suitable for attaching the slim rod 40 to the electrode 20 is divided into two.
The method of claim 1,
The slim rod 40 is assembled graphite chuck, characterized in that the elongated rod is connected by a bridge.
The method of claim 2,
The graphite chuck 60 is a prefabricated graphite, characterized in that the sub chuck 62 is connected to the slim rod 40 at the top, the main chuck 61 is connected to the electrode 20 at the bottom chuck.
The method of claim 3, wherein
Prefabricated graphite chuck characterized in that the main chuck (61) is larger than the sub chuck (62).
The method of claim 3, wherein
Prefabricated graphite chuck, characterized in that the coupling portion 70 is formed on the upper portion of the main chuck 61 to be coupled to the sub chuck (62).
5. The method of claim 4,
Prefabricated graphite chuck, characterized in that the coupling portion 70 is formed on the upper portion of the main chuck 61 to be coupled to the sub chuck (62).
The method according to claim 5 or 6,
The coupling part 70 is assembled graphite chuck, characterized in that formed in the form of upper and lower narrow (上 廣 下 狹)
The method according to claim 5 or 6,
The coupling part 70 is assembled graphite chuck, characterized in that formed by screws.
KR1020120017752A 2012-02-22 2012-02-22 Two Pieces Graphite Chuck KR101302231B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020120017752A KR101302231B1 (en) 2012-02-22 2012-02-22 Two Pieces Graphite Chuck

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120017752A KR101302231B1 (en) 2012-02-22 2012-02-22 Two Pieces Graphite Chuck

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KR20130096365A true KR20130096365A (en) 2013-08-30
KR101302231B1 KR101302231B1 (en) 2013-09-02

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105384172B (en) * 2015-12-29 2017-09-22 哈尔滨工业大学 A kind of improved Siemens polycrystalline silicon reducing furnace graphite chuck and its application method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3819252B2 (en) 2001-05-21 2006-09-06 住友チタニウム株式会社 Seed holding electrode
EP2039653B1 (en) * 2007-09-20 2015-12-23 Mitsubishi Materials Corporation Reactor for polycrystalline silicon and polycrystalline silicon production method
US8840723B2 (en) 2009-03-10 2014-09-23 Mitsubishi Materials Corporation Manufacturing apparatus of polycrystalline silicon
KR101439326B1 (en) * 2010-08-31 2014-09-11 주식회사 엘지화학 Chuck with nozzle in cvd reactor for producing polysilicon and cvd reactor for producing polysilicon comprising the same

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