KR20130095429A - Method for manufacturing epitaxial wafer - Google Patents

Method for manufacturing epitaxial wafer Download PDF

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Publication number
KR20130095429A
KR20130095429A KR1020120016843A KR20120016843A KR20130095429A KR 20130095429 A KR20130095429 A KR 20130095429A KR 1020120016843 A KR1020120016843 A KR 1020120016843A KR 20120016843 A KR20120016843 A KR 20120016843A KR 20130095429 A KR20130095429 A KR 20130095429A
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South Korea
Prior art keywords
wafer
temperature
process chamber
carrier gas
atmosphere
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KR1020120016843A
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Korean (ko)
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김대환
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주식회사 엘지실트론
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Priority to KR1020120016843A priority Critical patent/KR20130095429A/en
Publication of KR20130095429A publication Critical patent/KR20130095429A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: A method for manufacturing an epitaxial wafer is provided to prevent generation of a haze pattern by controlling temperature and ambient gas inside of a process chamber. CONSTITUTION: A method for manufacturing an epitaxial wafer comprises the steps of: loading a wafer within a process chamber (S210); depositing an epitaxial layer on the wafer at an atmosphere of a first carrier gas and at a first temperature; lowering the temperature inside of the process chamber from the first temperature to a second temperature and changing the atmosphere of the first carrier gas to an atmosphere of a second carrier gas (S230); and unloading the wafer from the process chamber (S240). [Reference numerals] (240) Unload a wafer from a process chamber; (AA) Start; (BB) Deposit an epitaxial layer on a wafer at an atmosphere of a first carrier gas and at a first temperature; (CC) Lower the temperature of a process chamber from a first temperature to a second temperature and change the atmosphere of a first carrier gas to the atmosphere of a second carrier gas; (DD) Finish; (S210) Load a wafer in a process chamber

Description

Epitaxial wafer manufacturing method {METHOD FOR MANUFACTURING EPITAXIAL WAFER}

Embodiments are directed to a method of manufacturing high quality epitaxial wafers by preventing haze patterns from occurring on the wafer surface.

Wafers used as materials for semiconductor device fabrication include a slicing process for thinly cutting single crystal silicon ingots into wafer forms, a lapping process for improving flatness while polishing to a desired thickness of the wafer, and damage to the wafer. ) Is produced into a wafer through steps such as etching for removal, polishing for improving surface mirroring and flatness, and cleaning for removing contaminants on the wafer surface.

An epitaxial wafer is a wafer in which a thin epitaxial film is formed by chemical vapor deposition in a reactor heated to a high temperature of 1000 ° C. or higher on a polished wafer produced by the above process. At this time, the source gas for epitaxial film deposition is transferred together with a carrier gas such as hydrogen (H 2 ) to improve the transfer force.

A wand unit is used as a means for transferring wafers in the epitaxial film deposition process. The wand unit uses the Bernoulli principle to hold or unload the wafer in a non-contact state, i.e., the wand unit injects nitrogen gas (N 2 ) toward the top surface of the wafer so that it is localized between the wand unit and the wafer. A vacuum is formed, which causes a relatively high pressure at the bottom of the wafer to grip and transfer the wafer from the top to a non-contact state.

However, the hydrogen gas, which is the carrier gas, and the nitrogen gas of the wand unit react by mutual collision at high temperatures, and a haze pattern is generated as nitrogen is deposited on the surface of the wafer, and the haze pattern is a roughness of the wafer surface. It deteriorates the quality and causes a defect in manufacturing a semiconductor device, causing a decrease in yield.

The nitrogen haze pattern generated during wafer loading can be compensated for as the epitaxial film is deposited thereon. However, the nitrogen haze pattern generated during wafer unloading does not occur and causes wafer defects.

Embodiments provide a method of manufacturing a high quality epitaxial wafer by controlling a temperature and an atmosphere gas of a process chamber during wafer unloading to prevent a haze pattern from occurring on a wafer surface.

An epitaxial wafer manufacturing method according to an embodiment includes the steps of loading a wafer into a process chamber; Depositing an epitaxial layer on the wafer at an atmosphere of a first carrier gas and at a first temperature; Cooling the inside of the process chamber from the first temperature to a second temperature and converting the atmosphere of the first carrier gas into an atmosphere of a second carrier gas; And unloading the wafer from a process chamber.

The wafer may be loaded or unloaded into a process chamber by holding the wafer by a wand unit that injects purge gas.

The second carrier gas and the purge gas may be the same component.

The second carrier gas and the purge gas may include nitrogen (N 2 ).

The first carrier gas may include hydrogen (H 2 ).

The first temperature may be 1100 ~ 1200 ℃, the second temperature may be 600 ~ 700 ℃.

According to the embodiment, it is possible to prevent the haze pattern from occurring on the surface of the wafer by suppressing the reaction of the atmosphere gas and the purge gas during wafer unloading, thereby manufacturing a high quality epitaxial wafer.

1 is a perspective view briefly showing an epitaxial wafer manufacturing apparatus according to an embodiment,
2 is an enlarged cross-sectional view of the process chamber,
3 is a flowchart of an epitaxial wafer manufacturing method according to an embodiment;
4 is a view showing a comparison between the epitaxial wafer prepared by the conventional method and the epitaxial wafer prepared by the method according to the embodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. The same components as in the prior art are given the same names and the same reference numerals for convenience of description, and detailed description thereof will be omitted.

1 is a perspective view briefly illustrating an epitaxial wafer manufacturing apparatus according to an embodiment.

The epitaxial wafer manufacturing apparatus 100 according to the embodiment includes load-lock chambers 112 and 114, a handling chamber 120, and a process chamber 130.

The load lock chambers 112 and 114 are provided at one side of the handling chamber 120 and are used as a waiting place of the wafer W.

In the load lock chambers 112 and 114, an accommodating part 115 accommodating a plurality of wafers W is positioned so that the wafers W are transportable.

Although two load lock chambers 112 and 114 are shown in FIG. 1, fewer or more load lock chambers may be provided in some embodiments.

One of the two load lock chambers 112 and 114 receives the wafer W before the epitaxial film is deposited, and the other load lock chamber 114 after the epitaxial film is deposited. The wafer W can be accommodated.

The load lock chambers 112 and 114 are formed to have a front surface open to allow the wafer W to enter and exit, and an open surface is provided with a door 113 for selectively opening and closing the load lock chambers 112 and 114.

Each of the load lock chambers 112, 114 is connected to the handling chamber 120 through a gate (not shown).

The process chamber 130 may be located at an opposite side of one side of the handling chamber 120 having the load lock chambers 112 and 114.

The handling chamber 120 transfers the wafer W between the load lock chambers 112 and 114 and the process chamber 130.

In the handling chamber 120, a transfer arm 122 is provided to grip and transfer the wafer W. The transfer arm 122 allows the wafer W accommodated in the load lock chamber 112 to process the process chamber. The wafer W, which is transferred to 130, and has been deposited, may be transferred from the process chamber 130 to the load lock chamber 114.

The process chamber 130 provides a reaction space in which an epitaxial film is deposited on the wafer (W).

The gate valve 140 is provided between the process chamber 130 and the handling chamber 120. Gate valve 140 serves to isolate process chamber 130 and handling chamber 120 during deposition of the epitaxial film.

A wand unit 150 is provided at the inlet of the process chamber 130, and the wafer W on which the epitaxial film is to be deposited is loaded from the transfer arm 122 to the process chamber 130, or the wafer W on which the epitaxial film is deposited. ) Is unloaded from the process chamber 130 to the transfer arm 122.

The wand unit 150 grips and transfers the wafer W in a non-contact state using the Bernoulli principle. That is, the wand unit 150 injects nitrogen gas N 2 toward the upper surface of the wafer W to form a local vacuum between the wand unit 150 and the wafer W, and thus the wafer W The pressure of the lower portion is relatively increased, so that the wafer W is gripped and transferred from the upper portion to the non-contact state.

One side of the process chamber 130 is provided with a gas injection unit (not shown) for injecting the source gas and carrier gas onto the wafer (W), the exhaust side (not shown) on the opposite side to discharge the source gas and the carrier gas ) May be provided.

2 is an enlarged cross-sectional view of the process chamber.

Referring to FIG. 2, the process chamber 130 includes a heater 132 for heating the inside of the process chamber 130 and a susceptor 134 for mounting and fixing the wafer W.

The wafer W is gripped in a non-contact manner by the wand unit 150 that injects the purge gas and is moved to the upper part of the susceptor 134 to be seated on the susceptor 134.

The wand unit 150 has an injection nozzle (not shown) for injecting purge gas. An inert gas is used as the purge gas, and nitrogen (N 2 ) may be used as an example.

During epitaxial film deposition, a source gas is injected into the process chamber 130. The source gas for depositing the epitaxial film is silicon (Si) such as silicon tetrachloride (SiCl 4 ), trichlorosilane (SiHCl 3 , Trichlorosilane (TCS)), dichlorosilane (SiH 2 Cl 2 , Dichlorosilane) or silane (SiH 4 ). Any of the gases contained can be used.

The source gas is transferred by a carrier gas such as nitrogen (N 2 ), argon (Ar) or hydrogen (H 2 ), which are inert gases for smooth ring transfer.

3 is a flow chart of an epitaxial wafer fabrication method according to an embodiment. Hereinafter, with reference to FIG. 3, the epitaxial wafer manufacturing method using an epitaxial wafer manufacturing apparatus is demonstrated.

In the method for manufacturing an epitaxial wafer according to the embodiment, the step of loading the wafer W into the process chamber 130 (S210), depositing an epitaxial film on the wafer W in the atmosphere and the first temperature of the first carrier gas (S220), cooling the inside of the process chamber 130 from the first temperature to the second temperature and converting the atmosphere of the first carrier gas into the atmosphere of the second carrier gas (S230), and the process chamber ( And unloading the wafer W from 130 (S240).

Referring to the epitaxial wafer manufacturing method in more detail step by step, first, the step (S210) of loading the wafer (W) into the process chamber 130 in the atmosphere of the first carrier gas is performed.

To this end, the inside of the process chamber 130 is set to a predetermined temperature.

Since the first temperature, which is the deposition temperature of the epitaxial film, is relatively high, the process chamber 130 is heated to load the wafer W into the process chamber 130, thereby preventing the wafer W from being damaged by a sudden temperature change. You can prevent it. The loading temperature may be about 80 to 90% of the first temperature, for example, may be 900 ~ 950 ℃.

When the temperature inside the process chamber 130 is heated to 900 to 950 ° C., the wafer W is loaded into the process chamber 130 and seated on the susceptor 134.

Thereafter, depositing an epitaxial film on the wafer W (S220).

When the wafer W is loaded into the process chamber 130, the process chamber 130 is heated to a first temperature, which is a deposition temperature of the epitaxial film. The first temperature may be 1100 ~ 1200 ℃.

Source gas for the deposition of the epitaxial film is silicon (Si) such as silicon tetrachloride (SiCl 4 ), trichlorosilane (SiHCl 3 , Trichlorosilane (TCS)), dichlorosilane (SiH 2 Cl 2 , Dichlorosilane) or silane (SiH 4 ). Any of the gases contained can be used. Source gas may be injected together with the first carrier gas to improve the transfer force. An atmosphere of the first carrier gas may be formed by the first carrier gas.

Thereafter, cooling the inside of the process chamber 130 from the first temperature to the second temperature and converting the atmosphere of the first carrier gas into the atmosphere of the second carrier gas (S230) are followed. The step S240 of unloading the wafer W from 130 is performed.

When unloading the wafer W on which the epitaxial film is deposited to the outside of the process chamber 130, the temperature inside the process chamber 130 to prevent damage to the wafer W or the transfer arm 122 due to high temperature heat. It is necessary to cool the wafer W to a predetermined temperature by lowering the temperature.

Conventionally, the unloading step of the wafer W was performed at 800 ~ 850 ℃.

However, when unloading the wafer W, the nitrogen gas injected by the wand unit and the hydrogen gas, which is the carrier gas injected into the process chamber, collide with each other at a high temperature so that a nitrogen haze pattern is generated on the surface of the wafer W to generate a wafer. There was a problem acting as a fault.

In an embodiment, prior to unloading the wafer W, the inside of the process chamber 130 is cooled to a second temperature lower than a conventional unloading temperature of 800 to 850 ° C., and the first carrier gas atmosphere is cooled to a second carrier gas atmosphere. It is possible to prevent the occurrence of a haze pattern on the surface of the wafer W by switching to.

The process chamber 130 and the wafer W may be naturally cooled by stopping the operation of the heater 132, or may be cooled by a cooling unit having a separate cooling unit (not shown).

As an example, the second temperature may be 600 to 700 ° C., but may vary depending on the embodiment.

By setting the second temperature to be lower than the conventional unloading temperature of 800 to 850 ° C, the reaction activation of the purge gas injected by the wand unit 150 is slowed down, and the reaction between hydrogen as the first carrier gas and nitrogen as the purge gas is reduced. Can be suppressed.

In the process of cooling the temperature of the process chamber 130 to the second temperature, the atmosphere in the process chamber 130 is gradually switched from the first carrier gas atmosphere to the second carrier gas atmosphere.

The second carrier gas atmosphere is formed by reducing the injection of the first carrier gas and injecting the second carrier gas, wherein the second carrier gas has a composition different from that of the first carrier gas, and the purge gas injected by the wand unit 150. It may have the same composition as.

When the wand unit 150 injects nitrogen (N 2 ) as a purge gas, the second carrier gas may also be nitrogen (N 2 ).

When the inside of the process chamber 130 is switched to the second carrier gas atmosphere, since the same atmosphere as that of nitrogen (N 2 ), which is a purge gas injected from the wand unit 150, is formed, the reaction between hydrogen and nitrogen is suppressed. It is possible to prevent the generation of a nitrogen haze pattern on the surface of the wafer W during unloading of W).

4 is a view showing a comparison between the epitaxial wafer prepared by the conventional method and the epitaxial wafer prepared by the method according to the embodiment.

4A illustrates an epitaxial wafer manufactured by a conventional method, and FIG. 4B illustrates an epitaxial wafer manufactured by a method according to an embodiment.

Referring to FIG. 4A, hydrogen (H 2 ), which is an atmospheric gas during wafer unloading, and the wand unit are injected onto a central surface of the wafer, which is a portion where nitrogen (N 2 ) is injected into the wafer from the wand unit. It can be seen that nitrogen reacts to form a nitrogen haze pattern.

In contrast, referring to FIG. 4B, when the wafer is unloaded, the temperature in the process chamber is lowered to the second temperature to slow the activation of the reaction of nitrogen (N 2 ), and the atmosphere of the process chamber is a wand unit. By forming the same atmosphere as the nitrogen to be injected, it can be confirmed that no nitrogen haze pattern is formed on the wafer surface.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100: epitaxial wafer manufacturing apparatus 112, 114: load lock chamber
113: door 115: receiving portion
120: handling chamber 122: transfer arm
130: process chamber 140: gate valve
150: wand unit

Claims (6)

Loading a wafer into a process chamber;
Depositing an epitaxial layer on the wafer at an atmosphere of a first carrier gas and at a first temperature;
Cooling the inside of the process chamber from the first temperature to a second temperature and converting the atmosphere of the first carrier gas into an atmosphere of a second carrier gas;
And unloading the wafer from the process chamber. The method of claim 1,
The wafer is epitaxial wafer manufacturing method in which the wafer is gripped by a wand unit for injecting a purge gas is loaded or unloaded into the process chamber. 3. The method of claim 2,
And the second carrier gas and the purge gas are the same component. 3. The method of claim 2,
And the second carrier gas and the purge gas include nitrogen (N 2 ). The method of claim 1,
And the first carrier gas comprises hydrogen (H 2 ). The method of claim 1,
The first temperature is 1100 ~ 1200 ℃, the second temperature is 600 ~ 700 ℃ epitaxial wafer manufacturing method.
KR1020120016843A 2012-02-20 2012-02-20 Method for manufacturing epitaxial wafer KR20130095429A (en)

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KR1020120016843A KR20130095429A (en) 2012-02-20 2012-02-20 Method for manufacturing epitaxial wafer

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