KR20130094621A - Light emitting diode having improved light extraction efficiency and method of fabricating the same - Google Patents

Light emitting diode having improved light extraction efficiency and method of fabricating the same Download PDF

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Publication number
KR20130094621A
KR20130094621A KR1020120016015A KR20120016015A KR20130094621A KR 20130094621 A KR20130094621 A KR 20130094621A KR 1020120016015 A KR1020120016015 A KR 1020120016015A KR 20120016015 A KR20120016015 A KR 20120016015A KR 20130094621 A KR20130094621 A KR 20130094621A
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South Korea
Prior art keywords
substrate
light emitting
inclined surface
emitting diode
semiconductor layer
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KR1020120016015A
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Korean (ko)
Inventor
이진웅
윤여진
김태균
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서울옵토디바이스주식회사
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Priority to KR1020120016015A priority Critical patent/KR20130094621A/en
Publication of KR20130094621A publication Critical patent/KR20130094621A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: A light emitting diode and a manufacturing method thereof reduce an optical loss due to total internal reflection by selecting a first inclined surface and a second inclined surface. CONSTITUTION: A substrate (21) includes a top surface, a bottom surface, and a side. A gallium nitride-based semiconductor light emitting structure is placed on the top surface of the substrate and includes a first conductive semiconductor layer (23), a second conductive semiconductor layer (27), and an active layer (25). The side of the substrate includes a first inclined surface (21b) and a second inclined surface (21a). The first inclined surface is inclined to make a width of the substrate be wider from the top surface to the bottom surface. A second inclined surface is inclined to make the width of the substrate be winder from the bottom surface to the top surface.

Description

LIGHT EMITTING DIODE HAVING IMPROVED LIGHT EXTRACTION EFFICIENCY AND METHOD OF FABRICATING THE SAME

The present invention relates to a light emitting diode and a method of manufacturing the same, and more particularly to a light emitting diode having an improved light extraction efficiency and a method of manufacturing the same.

In general, a light emitting diode is fabricated by growing gallium nitride based semiconductor layers on a sapphire substrate. However, the sapphire substrate and the gallium nitride layer have a large difference in coefficient of thermal expansion and lattice constant, so that many crystal defects such as threading dislocations are generated in the grown gallium nitride layer. Such crystal defects make it difficult to improve the electro-optical properties of light emitting diodes.

In order to solve this problem, there is an attempt to use a gallium nitride substrate as a growth substrate. Since the gallium nitride substrate is the same as the gallium nitride semiconductor layer grown thereon, the gallium nitride layer of good crystal quality can be grown.

However, since the gallium nitride substrate has a higher refractive index than the sapphire substrate, the light generated in the active layer is not emitted to the outside through the substrate, and the problem of loss inside the substrate becomes more serious.

An object of the present invention is to provide a light emitting diode that can reduce the light loss generated in the substrate and improve the light extraction efficiency.

According to an aspect of the present invention, there is provided a light emitting diode comprising: a substrate including an upper surface, a lower surface, and side surfaces connecting the upper surface and the lower surface; And a gallium nitride based semiconductor disposed on an upper surface of the substrate and including an active layer disposed between a first conductive semiconductor layer, a second conductive semiconductor layer, and the first conductive semiconductor layer and the second conductive semiconductor layer. It includes a light emitting structure. In addition, a side surface of the substrate includes a first inclined surface and a second inclined surface, the first inclined surface is inclined so that the width of the substrate becomes wider from the upper surface side toward the lower surface, the second inclined surface of the substrate The substrate is inclined so that the width of the substrate becomes wider from the lower surface to the upper surface.

Further, the substrate may be a gallium nitride substrate.

According to another aspect of the present invention, a light emitting diode includes: a gallium nitride substrate including an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface; And a gallium nitride based semiconductor disposed on an upper surface of the substrate and including an active layer disposed between a first conductive semiconductor layer, a second conductive semiconductor layer, and the first conductive semiconductor layer and the second conductive semiconductor layer. It includes a light emitting structure. Here, the side surface of the substrate includes a first inclined surface inclined so that the width of the substrate becomes wider from the upper surface side toward the lower surface.

Furthermore, the light emitting diode may further include a reflector positioned on the bottom surface of the substrate.

According to another aspect of the present invention, there is provided a light emitting diode manufacturing method including forming semiconductor layers on an upper surface side of a gallium nitride substrate having an upper surface and a lower surface, and partially removing the substrate from an upper surface side of the substrate. And forming a first inclined surface in the substrate, and partially removing the substrate from the lower surface side of the substrate to form a second inclined surface in the substrate. Here, the first inclined surface is inclined so that the width of the substrate becomes wider from the upper surface side toward the lower surface, and the second inclined surface is inclined so that the width of the substrate becomes wider from the lower surface side toward the upper surface.

Light may be emitted to the outside through the inclined surfaces formed on the side of the substrate, thereby improving light extraction efficiency of the light emitting diode. Furthermore, by adopting the first inclined surface and the second inclined surface, light loss due to total internal reflection can be greatly reduced, and the light extraction efficiency can be further improved.

1 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.
2 is a cross-sectional view for describing a light emitting diode according to still another embodiment of the present invention.
3 is a schematic cross-sectional view for explaining the blade.
4 to 6 are cross-sectional views illustrating a method of manufacturing a light emitting diode according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, etc. of components may be exaggerated for convenience. Like numbers refer to like elements throughout.

1 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.

Referring to FIG. 1, the light emitting diode includes a substrate 21, a first conductive semiconductor layer 23, an active layer 25, a second conductive semiconductor layer 27, a transparent electrode 29, and an upper insulating layer. 33 and reflector 35.

The substrate 21 may be a gallium nitride substrate, and has an upper surface, a lower surface, and a side surface. The substrate 21 may have a growth surface of c surface, m surface, or a surface.

Side surfaces of the substrate 21 may connect upper and lower surfaces, and may have inclined surfaces 21a and 21b and vertical surfaces 21c and 21d. In the present specification, the "inclined surface" means a surface inclined with respect to the upper or lower surface of the substrate 21, and excludes a surface perpendicular to the upper or lower surface. In the present specification, a surface perpendicular to the upper surface or the lower surface of the substrate 21 is referred to as a "vertical surface".

The first inclined surface 21b is inclined so that the width of the substrate 21 becomes wider from the upper surface of the substrate 21 to the lower surface, and the second inclined surface 21a is inclined from the lower surface of the substrate 21 to the upper surface. The substrate 21 is inclined so that the width of the substrate 21 is widened.

The first inclined surface 21b and the second inclined surface 21a may be formed on both side surfaces of the substrate 21. As shown, both sides of the light emitting diode may have a symmetrical structure, so that the width of the substrate 21 is increased in a specific region between the upper and lower surfaces of the substrate 21. It may have the structure of the widest shape.

The vertical surface 21c connects the first inclined surface 21b and the second inclined surface 21a. The vertical surface 21c may be formed by the braking of the substrate 21 to form a rough surface. The vertical surface 21c may be omitted. The vertical surface 21d connects the upper surface of the substrate 21 with the first inclined surface 21b. The vertical surface 21d may be parallel to the side surface of the first conductivity type semiconductor layer 23.

In the present exemplary embodiment, the second inclined surface 21a is illustrated as being connected to the lower surface of the substrate 21, but is not necessarily limited thereto. That is, the side surface of the substrate 21 may further include a vertical surface (not shown) connecting the second inclined surface 21a and the lower surface of the substrate 21.

Meanwhile, a semiconductor light emitting structure is disposed on an upper surface of the substrate 21, and the semiconductor light emitting structure is formed of the first conductive semiconductor layer 23, the active layer 25, and the second conductive semiconductor layer 27. Include. The first conductive semiconductor layer 23, the active layer 25, and the second conductive semiconductor layer 27 are formed of a gallium nitride compound semiconductor, and the active layer 25 has a single quantum well structure or a multiple quantum well structure. It can have Here, the first conductivity type and the second conductivity type may be n type and p type, respectively, but are not limited thereto and vice versa.

The transparent electrode 29 may be formed of, for example, a metal layer such as Ni / Au or an oxide layer such as ITO. The transparent electrode 29 may be in ohmic contact with the second conductive semiconductor layer 27.

Furthermore, the first electrode 31a and the second electrode 31b may be formed on the first conductive semiconductor layer 23 and the second conductive semiconductor layer 27, respectively. The first electrode 31a is formed of a metal layer in ohmic contact with the first conductive semiconductor layer 23, and the second electrode 31b is connected to the transparent electrode 29.

The upper insulating layer 33 may cover the semiconductor light emitting structure to protect the light emitting structure. The upper insulating layer 33 may be formed of, for example, a silicon oxide film or a silicon nitride film.

In addition, the reflector 35 is located on the bottom surface of the substrate 21. The reflector 35 reflects light traveling from the active layer 25 to the lower surface of the substrate 21. The reflector 35 may be a reflector in which dielectric layers having different refractive indices are alternately stacked, that is, a distributed Bragg reflector, but is not necessarily limited thereto, and may be formed of a reflective metal layer such as Ag or Al. Alternatively, when the gallium nitride substrate is a conductive substrate, a conductive material layer (alloy including ITO, FTO, GZO, ZnO, ZnS, InP, Si, or Si) and a metal film (Au, Ag to reduce contact resistance with the substrate). Or a single metal of Cu, Al, or Pt, or an alloy including at least one of the above), and may be formed as an omnidirectional reflector.

According to the present embodiment, part of the light generated in the active layer 25 proceeds to the side surface of the substrate 21. In the case where the substrate 21 is a gallium nitride substrate, since the refractive index of the substrate 21 is considerably high, the light propagating toward the side of the substrate 21 will mostly be totally internally reflected at the side. However, by forming the second inclined surface 21a as shown, the light L1 may be directly emitted to the outside through the second inclined surface 21a of the substrate 21 without being totally internally reflected.

In addition, a part of the light generated in the active layer 25 may be reflected from the lower surface of the substrate 21 to travel to the side. In this case, as illustrated, the light L2 may be emitted to the outside through the first inclined surface 21b to prevent total internal reflection from the side surface.

As described above, by forming the first inclined surface 21a and the second inclined surface 21b, total internal reflection generated from the side surface of the substrate 21 may be reduced to prevent light loss.

In the present embodiment, only one of the inclined surfaces of the first inclined surface 21b or the second inclined surface 21a may be formed. In this case, by adopting the reflector 35, the reflectance at the lower surface of the substrate 21 can be increased, and light can be emitted to the upper side of the substrate 21 through the second inclined surface 21b. When the first inclined surface 21a and the second inclined surface 21b are formed together as in the present embodiment, the light extraction efficiency of the light emitting diode may be further increased.

In the present embodiment, a light emitting diode having a horizontal structure is shown and described, but the present invention is not limited to the horizontal structure, and may be applied to a flip chip structure. In this case, the reflector 35 disposed on the lower surface of the substrate 21 is omitted.

2 is a cross-sectional view for describing a light emitting diode according to still another embodiment of the present invention.

Referring to FIG. 2, the light emitting diode according to the present embodiment is generally similar to the light emitting diode described with reference to FIG. 1, but the vertical surface 21d of FIG. 1 is omitted, and the first inclined surface 21b is formed on the substrate 21. The difference is in direct connection with the top surface.

That is, the first inclined surface 21b starts from the upper surface of the substrate 21. The first inclined surface 21b may be an inclined surface continuous with the side surfaces of the first conductive semiconductor layer 23 and the upper insulating layer 33.

The first inclined surface 21b described above may be formed by a scribing process using a blade. 3 is a schematic cross-sectional view for explaining the blade.

Referring to FIG. 3, the blade 50 for forming an inclined surface on a side surface of the light emitting diode has a tip portion and a body portion having inclined surfaces 51 formed on both sides thereof. The tip portion has a vertex angle θ and a height H, and the body portion has a width W. The first inclined surface 21b and the vertical surface 21d are determined by the shape of the blade. For example, when the vertex angle θ of the blade is large, the first slope 21b has a gentle slope, and when the vertex angle θ of the blade is large, the first slope 21b has a sharp slope. . Furthermore, the height H of the blade may be adjusted to form a vertical surface 21d with the first inclined surface 21b of FIG. 1 or the inclined surface 21b of FIG. 2.

In the present embodiment, a case in which the first inclined surface 21b is formed using the blade 50 has been described, but the second inclined surface 21b may also be formed using the blade 50.

4 to 5 are cross-sectional views illustrating a method of manufacturing a light emitting diode according to an embodiment of the present invention.

Referring to FIG. 4, gallium nitride based semiconductor layers including a first conductive semiconductor layer 23, an active layer 25, and a second conductive semiconductor layer 27 are grown on a gallium nitride substrate 21. The semiconductor layers are patterned to form mesas, and the first conductive semiconductor layer 23 is exposed. Subsequently, a transparent electrode 29 is formed on the second conductive semiconductor layer 27. The transparent electrode 29 may be formed before forming mesas.

Thereafter, an upper insulating layer 33 covering the first conductive semiconductor layer 23 and the transparent electrode 29 is formed, and an opening exposing the transparent electrode 29 and the first conductive semiconductor layer 23. To form. Subsequently, the first electrode 31a and the second electrode 31b connected to the first conductive semiconductor layer 23 and the transparent electrode 29 are formed.

In addition, a mask pattern 35 having an opening 35a exposing the bottom surface of the substrate 21 may be formed on the bottom surface of the substrate 21. The mask pattern 35 may be formed of a silicon oxide film or a silicon nitride film. Furthermore, the mask pattern 35 may be formed by alternately stacking dielectric films having different refractive indices, and thus the mask pattern 35 may be formed. It can be formed with a distributed Bragg reflector.

Referring to FIG. 5, the lower surface of the substrate 21 is etched using the mask pattern 35 as an etch mask. The lower surface of the substrate 21 may be wet etched using phosphoric acid or sulfuric acid (aqueous solution of sulfuric acid and phosphoric acid), and thus a groove having an inclined surface 21a may be formed as shown in FIG. 5. .

When the mask pattern 35 is not a distributed Bragg reflector, the mask pattern may be removed and the reflector may be formed on the lower surface of the substrate 21 again. This reflector may be formed of a distributed Bragg reflector or a reflective metal layer of Ag or Al, and may also be formed of an omnidirectional reflector.

Here, the formation of the inclined surface 21a using wet etching will be described. However, the inclined surface 21a may be formed using the blade 50 as described with reference to FIG. 3.

Referring to FIG. 6, the inclined surface 21b and the vertical surface 21d are formed by physically removing the substrate 21 using a blade from the upper surface side of the substrate 21. The inclined surface 21b and the vertical surface 21d may be formed using the blade 50 as shown in FIG. 3. The vertical surface 21d can be formed together with the inclined surface 21b by using the blade 50 having a shape in which a part of the body of the blade 50 can enter the inside of the substrate 21.

Here, the grooves on which the inclined surface 21b is formed are formed to correspond to the grooves on which the inclined surface 21a is formed, and are separated into light emitting diodes as shown in FIG. 1 by breaking a portion of the substrate 21 therebetween. .

In the present embodiment, the light emitting diode in which the vertical surface 21d is formed together with the inclined surface 21b has been described. However, the inclined surface 21b is obtained by using the blade 50 having a small vertex angle Θ and a relatively high height H. ) May be formed and the vertical surface 21d may not be formed. Accordingly, the light emitting diode of FIG. 2 may be manufactured.

In the present embodiment, the inclined surface 21a and the inclined surface 21b are formed so as not to meet each other, so that the vertical surface 21c as shown in FIG. 1 can be formed. However, the present invention is not limited thereto, and grooves may be formed such that the inclined surfaces 21a and 21b meet each other. For example, the inclined surface 21b and the inclined surface 21a can meet each other by forming a groove forming the inclined surface 21b up to the inclined surface 21a. In this case, the process of breaking the substrate 21 is omitted.

In the present embodiment, the formation of the inclined surface 21a first before the formation of the inclined surface 21b has been described, but the order of these processes may be interchanged.

Claims (15)

A substrate including an upper surface, a lower surface, and side surfaces connecting the upper surface and the lower surface; And
A gallium nitride-based semiconductor light emitting device comprising a gallium nitride-based semiconductor light emitting device comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer positioned between the first conductive semiconductor layer and the second conductive semiconductor layer on an upper surface of the substrate Contains a structure,
The side surface of the substrate includes a first inclined surface and a second inclined surface, the first inclined surface is inclined so that the width of the substrate becomes wider from the upper surface side toward the lower surface, the second inclined surface is the lower surface of the substrate The light emitting diode inclined so that the width of the substrate becomes wider toward the upper surface in. The method according to claim 1,
The side surface of the substrate comprises a surface perpendicular to the lower surface. The method according to claim 2,
The vertical surface is a light emitting diode connecting the upper surface of the substrate and the first inclined surface. The method according to claim 2,
The vertical surface is a light emitting diode connecting the first inclined surface and the second inclined surface. The method according to claim 2,
The vertical surface is a light emitting diode connecting the lower surface of the substrate and the second inclined surface. The method according to claim 1,
The first inclined surface is connected to the upper surface of the substrate, the second inclined surface is a light emitting diode connected to the lower surface of the substrate. The method according to claim 1,
And a reflector positioned on the bottom surface of the substrate. The method according to claim 1,
The substrate is a light emitting diode that is a gallium nitride substrate. A gallium nitride substrate including an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface; And
A gallium nitride-based semiconductor light emitting device comprising a gallium nitride-based semiconductor light emitting device comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer positioned between the first conductive semiconductor layer and the second conductive semiconductor layer on an upper surface of the substrate Contains a structure,
The side surface of the substrate includes a first inclined surface inclined so that the width of the substrate becomes wider from the upper surface side toward the lower surface. The method according to claim 9,
The side surface of the substrate further comprises a vertical surface connecting the upper surface and the first inclined surface. The method according to claim 9,
And a reflector positioned on the bottom surface of the substrate. Forming semiconductor layers on an upper surface side of the gallium nitride substrate having an upper surface and a lower surface,
Partially removing the substrate from the upper surface side of the substrate to form a first inclined surface on the substrate,
And partially removing the substrate from the lower surface side of the substrate to form a second inclined surface on the substrate,
The first inclined surface is inclined so that the width of the substrate becomes wider from the upper surface side to the lower surface,
And the second inclined surface is inclined so that the width of the substrate becomes wider from the lower surface side to the upper surface. The method of claim 12,
The first inclined surface is formed using a blade. The method of claim 12,
Forming the second inclined surface,
Forming a mask pattern having an opening exposing the substrate on a lower surface of the substrate,
A method of manufacturing a light emitting diode comprising wet etching the substrate through the opening. The method according to claim 14,
The mask pattern is a light emitting diode manufacturing method formed of a distributed Bragg reflector.
KR1020120016015A 2012-02-16 2012-02-16 Light emitting diode having improved light extraction efficiency and method of fabricating the same KR20130094621A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015053520A1 (en) * 2013-10-07 2015-04-16 염홍서 Substrate and light emitting diode
KR20150060265A (en) * 2013-11-26 2015-06-03 엘지이노텍 주식회사 Light emitting device and light emitting device package
WO2017138707A1 (en) * 2016-02-11 2017-08-17 서울바이오시스주식회사 High-power light-emitting diode and light-emitting module having same
KR20180059157A (en) * 2016-11-25 2018-06-04 서울바이오시스 주식회사 Light emitting diode having plurality of wavelength converter

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015053520A1 (en) * 2013-10-07 2015-04-16 염홍서 Substrate and light emitting diode
US9660143B2 (en) 2013-10-07 2017-05-23 Hongseo Yom Substrate and light emitting diode
KR20150060265A (en) * 2013-11-26 2015-06-03 엘지이노텍 주식회사 Light emitting device and light emitting device package
WO2017138707A1 (en) * 2016-02-11 2017-08-17 서울바이오시스주식회사 High-power light-emitting diode and light-emitting module having same
KR20170094679A (en) * 2016-02-11 2017-08-21 서울바이오시스 주식회사 High power light emitting diode and light emitting module having the same
US10559720B2 (en) 2016-02-11 2020-02-11 Seoul Viosys Co., Ltd. High-power light-emitting diode and light-emitting module having the same
KR20180059157A (en) * 2016-11-25 2018-06-04 서울바이오시스 주식회사 Light emitting diode having plurality of wavelength converter

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