KR20130085963A - Gas supply head and substrate processing apparatus - Google Patents

Abstract

PURPOSE: A gas supply heat and a substrate treatment apparatus are provided to spread gas improving unevenness in a discharged gas flow rate. CONSTITUTION: A first gas holes row (102a) is composed of multiple gas discharge holes. A second gas holes row (102b) is arranged in parallel with the first gas holes row in the same surface and is composed of the multiple gas discharge holes. The gas discharge hole which comprises a gas diffusion chamber (101a) is connected through a gas flow path which composes the first gas holes row. The gas discharge hole which comprises a gas diffusion chamber (101b) is connected through a gas flow path which composes the first gas holes row. The other gases are supplied to a first gas diffusion chamber and a second diffusion chamber. [Reference numerals] (AA) First gas; (BB) Second gas

Description

GAS SUPPLY HEAD AND SUBSTRATE PROCESSING APPARATUS}

The present invention relates to a gas supply head and a substrate processing apparatus.

Recently, as higher functions are required for a flat panel display (FPD), a semiconductor, a solar cell, and the like, such as an LCD (Liquid Crystal Display) or an organic EL (Organic Electro-Luminescence), etc. Higher accuracy has also been required for process technologies such as film formation and etching. In particular, in the film forming process, a film-forming technique by ALD (Atomic Layer Deposition) that can control film formation with high accuracy at the atomic layer level has attracted attention as compared to MO-CVD.

In film-forming apparatuses, such as ALD and MO-CVD, a precursor gas and an oxidant gas are introduce | transduced into a process space separately, for example, and are made to react in a process space. In this manner, depending on the film forming process, it is necessary to separately introduce a plurality of kinds of gases that contribute to the film forming process into the processing space.

Thus, the well-known example which introduces several types of gas into a process space individually is described, for example in patent document 1, 2.

(Prior art technical literature)

(Patent Literature)

(Patent Document 1) Japanese Unexamined Patent Application Publication No. 2001-77109

(Patent Document 2) Japanese Patent Application Laid-Open No. 62-149881

However, when a plurality of kinds of gases are separately introduced into the processing space, unnecessary deposits may be deposited in an unintended area, for example, in the vicinity of the gas supply head (gas nozzle). In particular, when there is a clearance gap in the gas supply head, gas retention tends to occur in the clearance gap, and gases may be mixed and reacted to form deposits.

In order to suppress the deposition of such unnecessary deposits, when the positions of the gas discharge holes of the gas supply heads corresponding to different gas types are separated from each other, the gas discharge hole spacing becomes wider, so that the uniformity of gas supply in the processing space is achieved. There was a situation to make bad.

The present invention provides a gas supply head and a substrate processing apparatus using the gas supply head, which can suppress generation of unnecessary deposits in an unintended region while suppressing deterioration in uniformity of gas supply.

The gas supply head which concerns on 1st aspect of this invention is a gas supply head which supplies the said some kind of gas to the process space which processes a board | substrate with a some kind of gas, Comprising: It consists of several gas discharge holes. The gas which comprises the 1st gas hole row, the 2nd gas hole row arrange | positioned in parallel with the 1st gas hole row in the same plane as the 1st gas hole row, and consists of several other gas discharge hole, and the said 1st gas hole row. The first gas diffusion means constituted by one or two or more gas diffusion chambers in which only the discharge holes communicate with each other through the gas flow path, and only the gas discharge holes constituting the second gas hole row communicate with each other through the gas flow path. It has a 2nd gas-diffusion means comprised by one or two or more gas diffusion chambers, and is different from the said 1st gas-diffusion means and the said 2nd gas-diffusion means. A gas flow is supplied.

The gas supply head which concerns on the 2nd aspect of this invention is a gas supply head which supplies the said some kind of gas to the processing space which processes a board | substrate with a some kind of gas, Comprising: It consists of several gas discharge holes. The gas which comprises the 1st gas hole row, the 2nd gas hole row arrange | positioned in parallel with the 1st gas hole row in the same plane as the 1st gas hole row, and consists of several other gas discharge hole, and the said 1st gas hole row. The first gas diffusion means constituted by one or two or more gas diffusion chambers in which only the discharge holes communicate with each other through the gas flow path, and only the gas discharge holes constituting the second gas hole row communicate with each other through the gas flow path. Second gas diffusion means composed of one or two or more gas diffusion chambers, and a surface different from the surface on which the first gas hole row and the second gas hole row are disposed In view of the above, a gas supply pipe for supplying gas to each of the one or two or more gas diffusion chambers constituting the first gas diffusion means and the one or two or more gas diffusion chambers constituting the second gas diffusion means. Has

A substrate processing apparatus according to a third aspect of the present invention is a substrate processing apparatus having a gas supply mechanism for supplying a plurality of gases of a plurality of kinds of gases to a processing space for processing the substrate by a plurality of kinds of gases. The supply mechanism is arranged in parallel with the first gas hole row in the same plane as the first gas hole row and the first gas hole row, and the second gas constituted by a plurality of other gas discharge holes. A first gas diffusion means composed of one or two or more gas diffusion chambers in which only a hole row and a gas discharge hole constituting the first gas hole row communicate with each other through a gas flow path, and the second gas hole row. A second gas diffusion means comprising one or two or more gas diffusion chambers each communicating only a gas discharge hole through a gas flow path, and the first gas diffusion number And the second in gas diffusion means has a gas supply pipe for supplying a different kind of gas.

According to the present invention, it is possible to provide a gas supply head and a substrate processing apparatus using the gas supply head, which can suppress the occurrence of unnecessary deposits in an unintended region while suppressing the deterioration of the uniformity of the gas supply.

1 is a horizontal sectional view showing an example of a substrate processing apparatus according to an embodiment of the present invention.
2 is a cross-sectional view taken along the line II-II in FIG. 1.
(A) is a horizontal cross section which shows an example of the gas supply head with which the substrate processing apparatus which concerns on one Embodiment is equipped, and FIG. 3 (b) is sectional drawing which follows the BB line in FIG. 3 (a).
4 is a perspective view showing the inside of an example of the gas supply head included in the substrate processing apparatus according to the embodiment;
5 is a longitudinal sectional view showing a modification of the substrate processing apparatus according to the embodiment of the present invention.
6 (a) is a cross-sectional view showing a first modification of the gas supply head, FIG. 6 (b) is a side view seen from arrow 6B in FIG. 6 (a), and FIG. 6 (c) is one of the arrangement of the gas hole rows. Side view showing a modification.
7 is a horizontal sectional view showing a second modification of the gas supply head.
8 (a) is a cross-sectional view showing a third modification of the gas supply head, and FIG. 8 (b) is a side view seen from arrow 8B in FIG. 8 (a).
9 is a perspective view of a gas supply head according to a third modification.
10 (a) to 10 (d) are side views showing the situation of gas discharge from the gas supply head shown in FIGS. 3 (a), 3 (b) and 4;
11 is a cross-sectional view showing a state of gas discharge from a gas supply head shown in FIGS. 3A, 3B, and 4;
12 (a) to 12 (d) are side views showing the situation of gas discharge from the gas supply head according to the third modification.
13 is a cross-sectional view showing a state of gas discharge from a gas supply head according to a third modification.
14 (a) to 14 (d) are cross-sectional views showing another modification of the gas supply head according to the third modification.

EMBODIMENT OF THE INVENTION Hereinafter, one Embodiment of this invention is described with reference to an accompanying drawing. In this description, like reference numerals refer to like parts throughout the drawings to which reference is made.

1 is a horizontal cross-sectional view showing an example of a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view along the line II-II in FIG. 1. In one Embodiment, the film-forming apparatus which performs a film-forming process on a glass substrate as an example of a substrate processing apparatus using the glass substrate used for manufacture of a FPD and a solar cell module as an example of a to-be-processed object.

As shown to FIG. 1 and FIG. 2, the substrate processing apparatus 1 is equipped with the processing chamber 3 which forms the processing space 2 which processes the to-be-processed object G. As shown in FIG. The processing chamber 3 includes a stage 4 on which the target object G is mounted, and a cover 5 covering the target object G mounted on the stage 4. The stage 4 and the cover 5 are configured to be movable relative to the height direction. When the stage 4 and the cover 5 are moved in the height direction, for example, when the cover 5 is raised and the cover 5 is removed from the stage 4, the object G provided on the stage 4 is mounted. The mounting surface is exposed to the outside. Thereby, carrying in, mounting, and carrying out of the to-be-processed object G on a mounting surface become possible. In addition, in FIG. 1 and FIG. 2, illustration of the lifter which raises and lowers the to-be-processed object G on the mounting surface is abbreviate | omitted.

On the contrary, when the cover 5 is lowered and the cover 5 is brought into close contact with the stage 4 while the object G is mounted on the mounting surface, the processing space 2 sealed from the outside is closed to the stage 4 and the cover ( It is formed between 5). Thereby, the process to the to-be-processed object G in the process space 2 is attained. In the present example, an example in which the cover 5 rises and falls relative to the stage 4 is described. However, the stage 4 may be configured to rise and fall relative to the cover 5, and the stage 4 and the cover may be configured. Of course, it is also possible to comprise both sides of (5) to raise and fall.

Inside the processing space 2, a gas supply head 6 constituting a part of a gas supply mechanism for supplying a gas used for processing to the processing space 2 and an exhaust groove 7 are provided. The exhaust groove 7 is connected to the exhaust device 7a. The exhaust device 7a exhausts the interior of the processing space 2. When the exhaust device 7a exhausts the interior of the processing space 2, adjustment of the pressure in the processing space 2 and replacement of the atmosphere in the processing space 2 (purge) are performed.

In the present example, the gas supply head 6 and the exhaust groove 7 are linear, and the linear gas supply head 6 and the exhaust groove 7 are positions facing each other, for example, four sides. It arrange | positions along the two sides which oppose among the rectangular stages 4 provided with. And the said mounting surface is provided in the shape which exists between the linear gas supply head 6 and the linear exhaust groove 7. The linear gas supply head 6 and the linear exhaust grooves 7 are disposed at positions facing each other, and between the linear gas supply head 6 and the linear exhaust grooves 7. By providing the mounting surface so as to form a gas flow F in which the laminar flow flows in one direction from the gas supply head 6 to the exhaust groove 7 above the processing target surface of the workpiece G mounted on the mounting surface. can do. In this example, the target object G is subjected to uniform desired processing by gas laminar in one direction, and uniform film formation treatment in this example.

The gas supply head 6 of this example is connected to the gas supply system 9 via the gas supply pipe 8 formed in the inside of the stage 4, for example. In this example, a gas supply mechanism is constituted by the gas supply head 6 and the gas supply pipe 8. The gas supply system 9 supplies the gas supply head 6, for example, a gas used for processing. The gas supply system 9 of this example connects the 1st gas supply system 9a which supplies a 1st gas to the gas supply head 6 via the 1st gas supply pipe 8a, and the 2nd gas supply pipe 8b. The 2nd gas supply system 9b which supplies a 2nd gas through is provided. Specific example of the first gas and the second gas is, for example, alumina (Al ₂ O ₃₎ Examples of the film formation, the first gas, the precursor of trimethyl aluminum _{((CH 3) 3 Al:} TMA) gas, a second gas Is a steam (H ₂ O) gas which is an oxidizing agent. Of course, the first gas and the second gas are not limited to the TMA gas and the steam gas, and can be changed depending on the type of the film to be formed. In addition, the gas is not limited to two kinds, and may be changed to three or more kinds depending on the kind of the film to be formed.

Such control of each part of the substrate processing apparatus 1 is performed by the control part 12. FIG. The control part 12 has the process controller 12a which consists of a microprocessor (computer), for example. In the process controller 12a, a user interface including a keyboard for performing a command input operation or the like for the operator to manage the substrate processing apparatus 1, a display for visualizing and displaying the operation status of the substrate processing apparatus 1, and the like. 12b is connected. The storage unit 12c is connected to the process controller 12a. The storage part 12c processes each part of the substrate processing apparatus 1 according to a control program for realizing various processes performed by the substrate processing apparatus 1 by the control of the process controller 12a, or processing conditions. The recipe for executing is saved. The recipe is stored in a storage medium in the storage unit 12c, for example. The storage medium may be a hard disk or a semiconductor memory, or may be portable such as a CD-ROM, a DVD, a flash memory, or the like. In addition, a recipe may be suitably transmitted from another apparatus, for example via a dedicated line. A recipe is read from the memory | storage part 12c by the instruction etc. from the user interface 12b as needed, and the board | substrate processing apparatus 1 performs the process according to the read recipe by the process controller 12a. Under the control of the process controller 12a, desired processing and control are performed.

Hereinafter, the gas supply head 6 of this example is demonstrated in detail.

(A) is a horizontal cross section which shows an example of the gas supply head with which the substrate processing apparatus which concerns on one Embodiment is equipped, FIG. 3 (b) is sectional drawing which follows the BB line in FIG. 3 (a), FIG. It is a perspective view which looked through the inside of an example of the gas supply head with which the substrate processing apparatus which concerns on a form is equipped.

As shown in FIG.3 (a), FIG.3 (b) and FIG.4, the gas supply head 6 is the gas diffusion which consists of the main body 100 and the linear space formed in the inside of the main body 100. FIG. A chamber 101 and a gas hole row 102 provided corresponding to the gas diffusion chamber 101 and composed of a plurality of gas discharge holes are provided. In this example, the gas diffusion chamber 101 is provided with the 1st gas diffusion chamber 101a to which the 1st gas is supplied, and the 2nd gas diffusion chamber 101b to which 2nd gas is supplied, respectively, 1st gas. The first gas and the second gas are supplied and diffused through the supply pipe 8a and the second gas supply pipe 8b. The first gas diffused in the first gas diffusion chamber 101a is from the first gas hole row 102a, and the second gas diffused in the second gas diffusion chamber 101b is from the second gas hole row 102b. Each is discharged toward the processing space 2. The first gas diffusion chamber 101a and the second gas diffusion chamber 101b are formed integrally with each other inside the main body 100, and similarly, the first gas hole row 102a and the second gas hole row 102b. ) Are also integrally formed inside the main body 100.

In this manner, the first gas diffusion chamber 101a, the second gas diffusion chamber 101b, the first gas hole row 102a and the second gas hole row 102b are integrally formed inside the main body 100. By doing so, it is possible to solve the situation that useless deposits are deposited on the gas supply head 6. For example, the first gas diffusion chamber 101a and the first gas hole row 102a are formed of the first member, and the second gas diffusion chamber 101b and the second gas hole row 102b are formed of the second member. In the case where the gas supply head is formed by overlapping the first and second members with each other, there is a possibility that deposits are deposited between the minute gaps between the first member and the second member. However, as in this example, the first gas diffusion chamber 101a, the second gas diffusion chamber 101b, the first gas hole row 102a and the second gas hole row 102b are inside the main body 100. By forming integrally with the structure, the micro gap can be eliminated from the gas supply head 6 and the possibility of depositing the deposit between the micro gaps can be obtained.

In addition, the 1st gas hole row 102a and the 2nd gas hole row 102b are arrange | positioned near the height direction Z inside the main body 100. FIG. In this example, the 1st gas hole row | line 102a is arrange | positioned at the upper end, and the 2nd gas hole row | line 102b is arrange | positioned at the lower end. The first gas hole row 102a and the second gas hole row 102b extend from the first gas diffusion chamber 101a and the second gas diffusion chamber 101b in the plane direction X, respectively, It is exposed to the processing space 2 side through the gas discharge surface 103. As a result, the opening of the first gas hole row 102a and the opening of the second gas hole row 102b are, for example, with respect to the plane direction X in one gas discharge surface 103 of the main body 100. It is arranged in parallel with each other along the orthogonal plane direction Y.

Thus, according to the gas supply head 6 of this example, in the gas supply head 6, the 1st gas hole row 102a and the 2nd gas hole row 102b are integrated in the inside of the main body 100. As shown in FIG. By forming, the 1st gas hole row | line 102a and the 2nd gas hole row | line 102b can be arrange | positioned adjacent to each other in the height direction Z. The first gas hole row 102a and the second gas hole row 102b can be disposed in close proximity to each other in the height direction Z, so that the first gas hole row 102a and the second gas hole row 102b are separated from each other. Since the gas discharge holes can be arranged at a narrow pitch, it is possible to obtain a uniform gas supply, whereby an advantage can be obtained that the film can be formed with high uniformity.

In addition, the arrangement pitch P1 of the 1st gas hole row | line 102a of this example, and the arrangement pitch P2 of the 2nd gas hole row | line 102b are mutually the same pitch P (P1 = P2 = P). And they are arranged so as to be offset by "P / 2" from each other. Thus, when arrangement pitch P1 of the 1st gas hole row | line 102a and arrangement pitch P2 of the 2nd gas hole row | line 102b are made into the same pitch P, for example, the horizontal direction in each part of the horizontal direction Y, for example. The gas discharge flow rate to X can be made equal to each other in the first gas hole row 102a and the second gas hole row 102b, and more uniform gas discharge into the processing space 2 becomes possible. Further, the first gas and the second gas are disposed from the gas supply head 6 by arranging the first gas hole row 102a and the second gas hole row 102b by being offset by "P / 2" from each other. It is possible to avoid mixing and reacting immediately after the discharge, and to obtain an advantage that the first gas and the second gas can be mixed evenly in the processing space 2.

Thus, according to the gas supply head 6 with which the substrate processing apparatus 1 which concerns on one Embodiment is equipped, since a small gap can be eliminated from the gas supply head 6, unnecessary deposits are deposited in the small gap. It can solve the situation.

In the gas supply head 6, the first gas hole row 102a and the second gas hole row 102b are integrally formed inside the main body 100 to form the first gas hole row 102a. ) And the second gas hole rows 102b can be arranged in close proximity to each other in the height direction Z, and the gas discharge holes can be arranged at a narrow pitch with respect to the processing space 2, so that uniform gas supply is possible. As a result, it is possible to obtain an advantage that a uniform film formation can be achieved.

In addition, by setting the arrangement pitches of the first gas hole rows 102a and the second gas hole rows 102b to the same pitch P, more uniform gas discharge is possible inside the processing space 2. Further, the processing space 2 is arranged by being offset by " P / 2 " and alternately arranged evenly with each other in the first gas hole row 102a and the second gas hole row 102b adjacent up and down. In the inside, the first gas and the second gas are avoided from reacting immediately after being discharged from the gas supply head 6 and reacted, and further, an advantage can be obtained that the first gas and the second gas can be mixed evenly. Can be.

Next, the modification of the gas supply head with which the substrate processing apparatus which concerns on one Embodiment, and the substrate processing apparatus which concerns on one Embodiment is equipped is demonstrated.

(Substrate Processing Unit: One Modification)

5 is a longitudinal cross-sectional view showing a modification of the substrate processing apparatus according to the embodiment of the present invention.

The substrate processing apparatus 1a according to the modification shown in FIG. 5 differs from the substrate processing apparatus 1 shown in FIG. 1 in that a plurality of the processing chambers 3 are provided. Thus, the process chamber 3 may be one, or may be more than one like this modified example.

Moreover, in this modification, the external chamber 20 which accommodates the some process chamber 3 is provided. The outer chamber 20 is provided with an opening 21 for communicating the inside and the outside of the outer chamber 20, and a gate valve 22 is connected to the opening 21. By opening the gate valve 22, the inside and the outside of the outer chamber 20 communicate with each other, and the carrying in and out of the object G can be performed. Moreover, the exhaust port 23 is provided in the bottom part of the outer chamber 20, for example, and the exhaust device 24 is connected to this exhaust port 23. As shown in FIG. By closing the gate valve 22 and operating the exhaust device 24 in the state where the inside of the outer chamber 20 is hermetically sealed from the outside, the pressure inside the outer chamber 20 can be reduced to a predetermined degree of vacuum. . Thus, for example, when performing the film forming process under reduced pressure in the plurality of processing chambers 3, the difference between the pressure inside the outer chamber 20 and the pressure inside the plurality of processing chambers 3 is reduced. Or the same, for example, the stage 4 or the cover 5 is not subjected to a large pressure, and thus the deformation such as the stage 4 or the cover 5 being slightly bent or twisted can be suppressed, It is possible to obtain an advantage that the film forming process with high accuracy can be performed on the processing target object G of.

In addition, since it can suppress that a large pressure is applied to the stage 4 and the cover 5, the intensity | strength of the stage 4 and the cover 5 can also be suppressed to some extent low. For this reason, in the substrate processing apparatus 1a, also about the advantage that it becomes possible to suppress manufacturing cost per one to-be-processed object G low.

In addition, when providing the some process chamber 3, it is preferable to provide in each of the some process chamber 3 about the gas supply head 6. As shown in FIG.

(Gas supply head: first modification)

Fig. 6A is a sectional view showing a first modification of the gas supply head, and Fig. 6B is a side view seen from arrow 6B in Fig. 6A. Fig. 6C is a side view showing a modification of the arrangement of the gas hole rows.

The gas supply head 6a which concerns on the 1st modified example shown to FIG. 6 (a) and FIG. 6 (b) is the gas supply head 6 shown to FIG. 3 (a), FIG. 3 (b), and FIG. Another point is that the third gas diffusion chamber 101c and the third gas hole row 102c are further provided. Although it is the same as what was demonstrated in said one embodiment, gas is not limited to two types, It can change also three or more types according to the kind of film | membrane formed into a film. This example is an example in which a film is formed by using three kinds of gases.

As an example of forming a film using three kinds of gases, for example, a silicon oxynitride film may be mentioned. In this case, the first gas is a silicon source gas as a precursor, a dichlorosilane (SiH ₂ Cl ₂ : DCS) gas, the second gas is a water vapor (H ₂ O) gas, which is an oxidant, and the third gas is a nitriding agent. Phosphorus ammonia (NH ₃ ) gas.

In this way, when three or more rows of gas hole rows 102a to 102c are provided, all of the columns of three or more rows of gas hole rows 102a to 102c can discharge different gases.

In this case, as arrangement | positioning of the gas hole rows 102a-102c, as shown to FIG. 6 (b), arrangement pitch P1-P3 of gas hole rows 102a-102c is set to "P1 = P2 = P3 = P". The offset pitches P1 to P3 of the gas hole rows 102a to 102c may be arranged to be offset by "P / 3", and as shown in FIG. 6 (c), "P1 = P2 = P3 = P". It may be arranged so that "P / 2" is offset from each other.

(Gas supply head: second modification)

7 is a horizontal sectional view showing a second modification of the gas supply head.

The gas supply head 6b which concerns on the 2nd modified example shown in FIG. 7 differs from the gas supply head 6 shown by FIG. 3 (a), FIG. 3 (b), and FIG. 4 in the 1st gas diffusion chamber. 101a and 2nd gas diffusion chamber 101b are divided into 1st gas diffusion chamber 101a1-101a4, and 2nd gas diffusion chamber 101b1-101b4. In the present example, along the horizontal direction Y, the first gas diffusion chamber 101a and the second gas diffusion chamber 101b include the plurality of first gas diffusion chambers 101a1 to 101a4 and the plurality of second gas diffusion chambers ( 101b1-101b4).

The first gas supply pipe 8a is connected to each of the plurality of first gas diffusion chambers 101a1 to 101a4, and the first gas is supplied from the first gas supply system 9a. Similarly, the second gas supply pipe 8b is connected to each of the plurality of second gas diffusion chambers 101b1 to 101b4, and the second gas is supplied from the second gas supply system 9b.

From each of the plurality of first gas diffusion chambers 101a1 to 101a4, the first gas is discharged into the processing space 2 through the first gas hole rows 102a and the plurality of second gas diffusion chambers 101b1 to 101b4. ), The second gas is discharged into the processing space 2 through the second gas hole rows 102b.

If it is the gas supply head 6b which concerns on such a 2nd modified example, along the horizontal direction Y, the 1st gas diffusion chamber 101a and the 2nd gas diffusion chamber 101b may be a plurality of 1st gas diffusion chamber 101a1. To 101a4) and a plurality of second gas diffusion chambers 101b1 to 101b4, and the length along the horizontal direction Y is suppressed. With this configuration, for example, when the length La along the horizontal direction Y of the first gas diffusion chamber 101a and the length Lb along the horizontal direction Y of the second gas diffusion chamber 101b are long, for example, 1 m. In the case of longer length, the first gas diffusion chamber 101a and the second gas diffusion chamber 101b are divided, respectively, and the length along the horizontal direction Y is suppressed, thereby keeping the horizontal direction Y in the gas diffusion chamber. It is possible to reduce the pressure gradient generated in the longitudinal direction, to improve the unevenness of the discharged gas flow rate caused by different locations in the gas diffusion chamber, to sufficiently diffuse the gas, and to provide the first gas hole row 102a and The discharge gas flow volume from the 2nd gas hole row 102b can be made uniform. For this reason, the advantage that one side of the to-be-processed object G, for example, it is advantageous for the application to the film-forming process of 1 m or more large substrates can be acquired.

Moreover, also when the 1st gas diffusion chamber 101a and the 2nd gas diffusion chamber 101b are divided, respectively, the some 1st gas diffusion chamber 101a1-101a4 and the some 2nd gas diffusion chamber 101b1 are also divided. By offsetting ˜101b4 from each other, the arrangement pitch of the first gas hole rows 102a and the arrangement pitch of the second gas hole rows 102b can be kept constant with each other. For this reason, the advantage that uniform discharge of the gas is possible inside the processing space 2 can be obtained. In addition, similarly to the above-described embodiment, the arrangement pitch P1 of the first gas hole row 102a and the arrangement pitch P2 of the second gas hole row 102b are set to "P1 = P2 = P". For variations, for example, large substrates of 1 m or more, the gas can be uniformly supplied from the upper and lower ends.

(Third modification)

Fig. 8A is a sectional view showing a third modification of the gas supply head, Fig. 8B is a side view seen from the arrow 8B in Fig. 8A, and Fig. 9 is a gas supply head according to the third modification. Perspective view.

The gas supply head 6c which concerns on the 3rd modified example shown to FIG.8 (a), FIG.8 (b) and FIG.9 is the gas supply head shown to FIG.3 (a), FIG.3 (b) and FIG.4 ( The difference from 6) is that the groove 104a connecting the first gas hole row 102a to each other and the groove 104b connecting the second gas hole row 102b to the gas discharge surface 103 are connected to each other. It is in thing which has more. In this example, the cross section along the horizontal direction X of the groove | channel 104a and the groove | channel 104b is the "V-shape" which consists of straight lines.

10 (a) to 10 (d) are side views showing the situation of gas discharge from the gas supply head 6 shown in FIGS. 3 (a), 3 (b) and 4, and FIG. 11 shows the gas discharge. It is sectional drawing which shows the situation.

12 (a) to 12 (d) are side views showing the situation of gas discharge from the gas supply head 6c shown in FIGS. 8 (a), 8 (b) and 9, and FIG. It is sectional drawing which shows the state of gas discharge.

As shown to FIG.10 (a)-FIG.10 (d) and FIG.11, in the gas supply head 6 shown to FIG.3 (a), FIG.3 (b) and FIG.4, the gas hole row 102a is carried out. The gas discharged along the horizontal direction X from 102b is diffused inside the processing space 2 while spreading, for example, in a concentric shape.

On the other hand, as shown in FIGS. 12A to 12D and FIG. 13, in the gas supply head 6c according to the third modification, the gas discharged along the horizontal direction X is the groove 104a. (Or 104b), it spreads in the groove 104a (or 104b) while spreading along the horizontal direction Y. And inside the groove 104a (or 104b), it is mixed with the gas discharged from the neighboring gas discharge hole, and becomes a thin sheet-like laminar flow, and it processes from the groove 104a (or 104b). It spreads inside (2).

Thus, in the 3rd modification, the groove | channel 104b which connects the 1st gas hole row | line 102a with each other, and the groove | channel 104b which connects the 2nd gas hole row | line 102b with each other in the gas discharge surface 103 is made. ), The gas can be discharged as one thin plate-like laminar flow.

That is, according to the 3rd modification, compared with the gas supply head 6 shown to FIG. 3 (a), FIG. 3 (b), and FIG. 4, it becomes easy to form thin laminar flow of thickness t1 of laminar flow. For this reason, the advantage that further generation | occurrence | production of the deposit in unnecessary place, such as the gas discharge surface in which the gas hole row in the gas supply head 6c is arrange | positioned, and the uniformity of gas supply can be made more favorable Can be obtained.

The third modification does not deny the gas supply head 6 shown in Figs. 3A, 3B, and 4, and since the reactivity varies depending on the type of gas, Fig. 3A ), The gas supply head 6 shown in FIG.3 (b) and FIG.4 may be suitable. For this reason, whether to select the gas supply head 6c which concerns on 3rd modification, or the gas supply head 6 shown to FIG. 3 (a), FIG. 3 (b), and FIG. 4, for example, the gas to be used. What is necessary is just to decide suitably according to the kind of.

14 (a) to 14 (d) are cross-sectional views showing another modification of the gas supply head according to the third modification.

In FIG. 8, although the cross section along the horizontal direction X of the groove | channel 104a and the groove | channel 104b was the "V-shape" comprised by the straight line, as shown to FIG. 14 (a), the groove | channel 104a and The cross section along the horizontal direction X of the groove | channel 104b may be a staircase shape, for example.

In addition, as shown to FIG.14 (b) and FIG.14 (c), the cross section along the horizontal direction X of the groove | channel 104a and the groove | channel 104b may have a curved surface, for example. In the case of having a curved surface, as shown in Fig. 14B, the curved surface may be convex toward the outside of the grooves 104a and 104b. As shown in Fig. 14C, the curved surfaces are the grooves 104a and 104b. It may be a convex shape toward the inside of the).

As shown in Fig. 14 (d), there is no "plane" between the first gas hole row 102a and the second gas hole row 102b, and the first gas hole row 102a and the second are not. It may be a common groove 104 connecting the gas hole rows 102b.

As mentioned above, although this invention was demonstrated according to one Embodiment, this invention is not limited to said one embodiment, A various deformation | transformation is possible. Note that the embodiment of the present invention is not the only embodiment described above.

For example, in one embodiment, although the arrangement pitch P1 of the 1st gas-hole row 102a and arrangement pitch P2 of the 2nd gas-hole row 102b were made into "P1 = P2", it was intentionally based on the gas flow volume of discharge gas. In the case where a density distribution is to be provided, the arrangement pitch P1 and the arrangement pitch P2 may be different pitches.

In addition, the gas supply mechanism in one embodiment includes at least a gas hole row for each gas type, one or a plurality of gas diffusion chambers corresponding to the gas hole row, and a gas supply system from each gas supply system. What is necessary is just to be comprised by the gas piping for supplying the gas, and the gas diffusion chamber may not necessarily be provided in the gas supply head. In addition, the gas supply head may be provided integrally with the stage.

The film to be formed is not limited to the alumina film, and as mentioned above, the above embodiment can be applied to the deposition of various films.

In addition, this invention can be variously modified in the range which does not deviate from the summary.

G: Object to be processed
101: gas diffusion chamber
102: gas discharge hole
103: gas discharge surface
104: Home

Claims (7)

As a gas supply head which supplies the said some kind of gas to the process space which processes a board | substrate with a some kind of gas,
A first gas hole row composed of a plurality of gas discharge holes,
A second gas hole row arranged in parallel with the first gas hole row on the same plane as the first gas hole row, and composed of a plurality of different gas discharge holes;
First gas diffusion means composed of one or two or more gas diffusion chambers each communicating only a gas discharge hole constituting the first gas hole row through a gas flow path;
Second gas diffusion means composed of one or two or more gas diffusion chambers each communicating only a gas discharge hole constituting the second gas hole row through a gas flow path;
Lt; / RTI &
Different types of gas are supplied to the first gas diffusion means and the second gas diffusion means.
Gas supply head, characterized in that.
The method of claim 1,
The first gas hole row has a V-shaped groove connecting the plurality of gas discharge holes constituting the first gas hole row,
The second gas hole row has a V-shaped groove that connects a plurality of gas discharge holes that constitute the second gas hole row.
Gas supply head, characterized in that.
The method of claim 1,
And a gas discharge hole constituting the first gas hole row and a gas discharge hole constituting the second gas hole row are offset from positions adjacent to each other.
As a gas supply head which supplies the said some kind of gas to the process space which processes a board | substrate with a some kind of gas,
A first gas hole row composed of a plurality of gas discharge holes,
A second gas hole row arranged in parallel with the first gas hole row on the same plane as the first gas hole row, and composed of a plurality of different gas discharge holes;
First gas diffusion means composed of one or two or more gas diffusion chambers each communicating only a gas discharge hole constituting the first gas hole row through a gas flow path;
Second gas diffusion means comprising one or two or more gas diffusion chambers each communicating only a gas discharge hole constituting the second gas hole row through a gas flow path;
On the surface different from the surface where the first gas hole row and the second gas hole row are arranged, one or two or more gas diffusion chambers constituting the first gas diffusion means and the second gas diffusion means are constituted. A gas supply pipe for supplying gas to each of one or more gas diffusion chambers
Gas supply head comprising a.
As a substrate processing apparatus provided with the gas supply mechanism which supplies the said some kind of gas to the process space which processes a board | substrate with a some kind of gas,
The gas supply mechanism,
A first gas hole row composed of a plurality of gas discharge holes,
A second gas hole row arranged in parallel with the first gas hole row on the same plane as the first gas hole row, and composed of a plurality of different gas discharge holes;
First gas diffusion means composed of one or two or more gas diffusion chambers each communicating only a gas discharge hole constituting the first gas hole row through a gas flow path;
Second gas diffusion means comprising one or two or more gas diffusion chambers each communicating only a gas discharge hole constituting the second gas hole row through a gas flow path;
Gas supply piping which supplies a different kind of gas to each of the first gas diffusion means and the second gas diffusion means.
Characterized in having
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The method of claim 5, wherein
It has two or more process chambers which form the said process space, The said gas supply mechanism is provided in each of the said process chambers, The substrate processing apparatus characterized by the above-mentioned.
The method according to claim 6,
And an outer chamber accommodating the two or more processing chambers and maintaining the outside of the processing chamber in a reduced pressure atmosphere.

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