KR20130081631A - Target for generating ion and treatment apparatus using the same - Google Patents

Abstract

PURPOSE: A target for generating ion is provided to increase the strength of a laser beam which is emitted to a target. CONSTITUTION: A target for generating ion includes a substrate (10) which has a first surface and a second surface which faces the first surface, becomes narrow from the first surface to the second surface, and has a corn shape hole which is comprised of a metal in an inner wall; and an ion-generating thin film (30) which generates ion by a reinforced laser beam (20) which is emitted into the inside of the corn shape hole of the first surface of the substrate. The substrate includes a metal material. The metal material includes silver, copper, gold, or aluminum. The substrate includes an insulating material.

Description

Target for Generating Ion and Treatment Apparatus Using the Same}

The present invention relates to a target for generating ions and a treatment device using the same, and more particularly to a target for generating protons or carbon ions and an ion beam treatment device using the same.

There are X-ray, electron beam and ion beam therapies in radiation treatment methods. X-ray therapy is currently the most commonly used radiotherapy method because it is the cheapest method that can be implemented using the simplest devices. Although electron accelerating accelerators have been shown to be able to treat tumors when injected into tumors in the 1950s, electron beam therapy has become one of the methods of radiation therapy in earnest by realizing miniaturization of electron accelerators in the 1980s. I was caught. On the other hand, X-ray therapy or electron beam therapy has disrupted hydrogen bonds in cancer cells by breaking hydrogen bonds in cancer cells, but it has accompanied side effects that seriously damage healthy cells present in the pathway. Techniques such as Intensity-Modulated Radiation Therapy (IMRT) or tomotherapy (Tomo Therapy) and Cyber Knife have been developed as methods for reducing the exposure problem to these normal cells. However, It was not completely resolved.

Ion beam therapy is attracting attention as a treatment tool to alleviate side effects in x-ray therapy or electron beam therapy. In order for the ion beam to penetrate the material, it must accelerate as fast as the electrons and have a high speed. Although the ion beam will gradually decrease in speed when it passes through certain materials, the ion beam experiences the most energy loss of ionizing radiation just before stopping. This phenomenon is called Bragg Peak, in the name of William Henry Bragg, who discovered it in 1903. Therefore, in the case of ion beam therapy, selective and local treatment of malignant tumors is possible when the velocity of ions is precisely controlled. When the tumor is located deep in the body, it is necessary to accelerate proton or ions of very large energy outside the body. One of the methods of accelerating such protons or ions is laser driven ion acceleration. When a high-power laser beam is irradiated onto a thin film, ions or protons in the thin film are accelerated by a target normal sheath acceleration model (TNSA model) or a radiation pressure acceleration model (RPA model) And escape out. The escaped ions pass through the patient's body as much energy as they have and stop at a certain depth at which the tumor is located. It is known that a large amount of free oxygen radicals are generated in the stationary region, It becomes the principle of treatment.

In ion beam therapy using laser induced ion acceleration method, ions have two properties. In order to inject deeper ions into the body, it must be a high energy ion and most of the ions must have the same energy. Proton penetrates 20 cm of the body at an energy of 250 MeV. High energy ions, such as 70 MeV, are required for treatment of cancer of the organs, and high energy ions of more than 200 MeV are needed for treatment of deep cancer.

Also, the energy of most proton or ions induced by the femto second laser must be uniform. If it is not uniform, ions can not accumulate only at the tumor site, and normal tissues may be exposed to ions.

In order to satisfy these two reasons, the thickness of the target as a source of ions must be very small. Therefore, the target should be an ultra thin film.

The energy of the laser to accelerate these ions must have a very large energy of 10 ¹⁹ ~ 10 ²¹ W / cm ² . This means a very large laser system and means a large budget.

An object of the present invention is to provide a target for generating ions capable of generating high energy protons or carbon ions and an ion beam treatment apparatus using the same.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

In order to achieve the above object, the present invention provides a target for ion generation. The target has a first face and a second face opposite the first face, the substrate having a cone-shaped aperture narrowing from the first face toward the second face to penetrate therethrough, on the inner surface of the substrate exposed by the cone-shaped aperture. And a thin film for generating an ion, which is attached to the cone-shaped metal thin film provided on the substrate, and which generates ions by an augmented laser beam that enters into the cone-shaped metal thin film of the first surface of the substrate.

The cone metal thin film may include silver, copper, gold or aluminum.

The inner circumferential surface of the cone-shaped metal thin film may be mirror-polished.

The substrate may comprise an insulating material.

It may further include an inert gas provided inside the cone-shaped metal thin film.

The inner diameter of the cone-shaped metal thin film on the side of the first side of the substrate may be several tens of micrometers, and the inner diameter of the cone-shaped metal thin film on the second side of the substrate may range from several tens of nm to several μm.

The ions can be protons or carbon ions.

Ions are protons, and the ion generating thin film may be a material containing hydrogen. The material containing hydrogen may be silicon nitride, silicon oxide or metal.

Ions are carbon ions, and the ion generating thin film may be a material including graphene, fullerenes in which carbon atoms are spherical or columnar, or carbon nanotubes.

The substrate may have a plurality of cone-shaped holes, but have an aligned arrangement of the plurality of cone-shaped holes.

Moreover, in order to achieve the said subject, this invention provides the other ion generation target. The target has a first side and a second side opposite to the first side, the metal substrate having a cone-shaped aperture narrowing from the first side toward the second side to penetrate therethrough, and attached to the second side of the substrate. The thin film for generating ions may be included in the cone-shaped hole of the first surface of the substrate to generate ions by the enhanced laser beam.

The surface of the metal substrate exposed by the cone-shaped holes can be mirrored.

The metal substrate may comprise silver, copper, gold or aluminum.

It may further include an inert gas provided inside the cone-shaped hole.

The diameter of the cone-shaped hole on the side of the first side of the substrate is several tens of micrometers, and the diameter of the cone-shaped hole on the side of the second side of the substrate may range from several tens of nm to several μm.

The ions can be protons or carbon ions.

Ions are protons, and the ion generating thin film may be a material containing hydrogen. The material containing hydrogen may be silicon nitride, silicon oxide or metal.

Ions are carbon ions, and the ion generating thin film may be a material including graphene, fullerenes in which carbon atoms are spherical or columnar, or carbon nanotubes.

The metal substrate may have a plurality of cone-shaped holes, but may have an aligned arrangement of the plurality of cone-shaped holes.

Moreover, in order to achieve the said subject, this invention provides an ion beam therapy apparatus. The treatment apparatus includes a laser for injecting a laser beam into the cone-shaped hole of the first side of the substrate for generating ions from the ion generating target and the ion generating thin film and projecting the tumor to the patient's tumor site. can do. The intensity of the laser beam incident into the cone-shaped hole is enhanced by focusing by the cone-shaped hole, and ions may be emitted from the thin film for ion generation by the enhanced laser beam.

The surface of the substrate exposed by the cone hole can be mirrored.

It may further include an inert gas provided inside the cone-shaped hole.

The laser may be disposed on the first side of the substrate.

The laser beam may be a femtosecond laser beam.

As described above, according to the problem solving means of the present invention, the ion generating target has a cone-shaped hole, the intensity of the laser beam incident on the ion generating target can be increased. Accordingly, a target for ion generation that can generate high energy protons or carbon ions without increasing the output of the laser can be provided.

Moreover, according to the solution of the subject of this invention, a high energy proton or carbon ion can be projected to the tumor site of a patient by using the ion generating target which has a cone-shaped hole. Thus, an ion beam therapy apparatus capable of treating a patient's tumor at a low cost can be provided.

1 is a three-dimensional view for explaining the ion generating target used in the ion beam treatment apparatus according to an embodiment of the present invention.
FIG. 2 is a cut stereoscopic view for explaining a phenomenon occurring in a target for generating an ion used in an ion beam treatment apparatus according to an embodiment of the present invention.
3 is a cut-away perspective view for explaining another phenomenon occurring in the ion generating target used in the ion beam treatment apparatus according to the embodiment of the present invention.
Figure 4a is a three-dimensional view for explaining the ion generating target used in the ion beam treatment apparatus according to another embodiment of the present invention.
4B is a cross-sectional view taken along the line II ′ of FIG. 4A.
5 is a conceptual diagram for explaining an ion beam treatment apparatus according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in different forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the concept of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, the terms 'comprises' and / or 'comprising' mean that the stated element, step, operation and / or element does not imply the presence of one or more other elements, steps, operations and / Or additions. In addition, since they are in accordance with the preferred embodiment, the reference numerals presented in the order of description are not necessarily limited to the order. In addition, in this specification, when it is mentioned that a film is on another film or substrate, it means that it may be formed directly on another film or substrate, or a third film may be interposed therebetween.

In addition, the embodiments described herein will be described with reference to cross-sectional views and / or plan views, which are ideal illustrations of the present invention. In the drawings, the thicknesses of films and regions are exaggerated for effective explanation of technical content. Thus, the shape of the illustrations may be modified by manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention are not limited to the specific forms shown, but also include variations in forms generated by the manufacturing process. For example, the etched area shown at right angles may be rounded or may have a shape with a certain curvature. Thus, the regions illustrated in the figures have schematic attributes, and the shapes of the regions illustrated in the figures are intended to illustrate specific types of regions of the elements and are not intended to limit the scope of the invention.

1 is a three-dimensional view for explaining the ion generating target used in the ion beam treatment apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the ion generating target includes a substrate 10 having a cone type hole 12 and an ion generating thin film 30 attached to one surface of the substrate 10.

The substrate 10 may have a first side and a second side opposite to the first side. The cone-shaped hole 12 may have a structure that narrows from the first surface to the second surface so as to penetrate the substrate 10. That is, the cone-shaped hole 12 may have a tapered structure in which the diameter at the first side of the substrate 10 is larger than the diameter at the second side. The diameter of the first surface-side cone-shaped hole 12 of the substrate 10 may be about several tens of micrometers, and the diameter of the second surface-side cone-shaped hole 12 of the substrate 20 may range from several tens of nm to several μm. Here, one end of the first surface side cone hole 12 of the substrate 10 is an entrance hole 11 to which a laser beam (see 20 in FIG. 2) enters, and a second surface side cone hole of the substrate 10 is present. The other end of 12 is the exit port 13 from which the laser beam comes out.

The substrate 10 may include a metal material having a very high electrical conductivity. The metal material may include silver (Ag), copper (Cu), gold (Au) or aluminum (Al). The surface of the substrate 10 exposed by the cone-shaped hole 12 may be mirror-like finishing. The cone-shaped hole 12 serves to enhance the energy, that is, the intensity of the laser beam by focusing the incoming laser beam. The higher the reflectance of the laser beam by the cone-shaped hole 12, the higher the intensity of the laser beam. This is because the degree to which is enhanced. In addition, since the cone-shaped hole 12 has an inclined structure, it can have the effect of focusing the laser beam like a convex lens. In other words, the cone-shaped hole 12 serves as a laser cavity. Accordingly, the laser beam is focused by the cone-shaped hole 12 narrowing in the direction of travel of the laser beam, so that its intensity can be increased.

The substrate 10 may include an insulating material. The insulating material may include glass, silicon, polymer, or the like. When the substrate 10 includes an insulating material, the substrate 10 may further include a cone metal thin film (see 15 of FIG. 2) provided on the inner surface of the substrate 10 exposed by the cone hole 12. The cone-shaped metal thin film may have silver, copper, gold or aluminum, which is a metal material having a very high electrical conductivity. The inner diameter of the first surface side cone-shaped metal thin film of the substrate 10 may be about several tens of micrometers, and the inner diameter of the second surface side cone-shaped metal thin film of the substrate 10 may range from several tens of nm to several μm. The inner circumferential surface of the cone-shaped metal thin film may be mirror-polished. This may be for imparting the same effect to the cone metal thin film as the cone hole 12 described above. In other words, the cone-shaped metal thin film acts as a laser cavity. Accordingly, while the laser beam is focused by the cone-shaped metal thin film narrowing in the direction of travel of the laser beam, its intensity can be enhanced.

The ion generating thin film 30 may be attached to the second surface of the substrate 10. The incident laser beam (see 20 in FIG. 3) is enhanced in intensity by a cone-shaped hole 12 or a cone-shaped metal thin film, and the ion generating thin film 30 is ionized by an increased laser beam (see 32 in FIG. 3). ) Can be generated. The ions can be protons or carbon ions.

When the ions are protons, the ion generating thin film 30 may be a material containing hydrogen (H). The material containing hydrogen may be silicon nitride, silicon oxide or metal. In addition, when the ions are carbon ions, the ion generating thin film 120 may include graphene, fullerenes in which carbon atoms are spherical or columnar, or carbon nanotubes. .

FIG. 2 is a cut stereoscopic view for explaining a phenomenon occurring in a target for generating an ion used in an ion beam treatment apparatus according to an embodiment of the present invention.

Referring to FIG. 2, when the laser beam 20 enters the entrance hole 11 of the cone-shaped hole 12 of the substrate 10 of the target for ion generation, the cone-shaped hole 12 serving as a laser cavity is provided. Its strength can be increased. The enhanced laser beam 21 may transfer energy to the ion generating thin film 30 attached to the exit port 13 side. As shown, when the substrate 10 includes an insulating material, the above-described cone-shaped metal thin film 15 may be provided on the inner surface of the substrate 10 exposed by the cone-shaped hole 12. Accordingly, ions (see 32 in FIG. 3) may be generated from the ion generation thin film 30. In this case, the intensity of the augmented laser beam 21 may be several to several hundred times greater than the intensity of the laser beam 20 entering the inlet 11.

3 is a cut-away perspective view for explaining another phenomenon occurring in the ion generating target used in the ion beam treatment apparatus according to the embodiment of the present invention.

Referring to FIG. 3, a difference from FIG. 2 is that an inert gas (He, Ne, Ar, Kr, Xe, etc.) 33 is provided at a constant pressure inside the cone-shaped hole 12 of the substrate 10 of the ion generating target. Can be.

The inert gas 33 is excited by the energy of the laser beam 20 entering the cone-shaped hole 12 and then the higher order harmonic wave 31 whose frequency is multiplied by the emitting photons. Can be generated. Atoms contained in the ion generating thin film 30 by the incremental and higher order harmonized laser beam 31 become ions 32 while undergoing an ionization process, and the ions 32 are formed by such higher order harmonic waves. It can be accelerated with great energy and projected onto a tumor site in the human body (see 54 in FIG. 5).

4A is a three-dimensional view illustrating an ion generation target used in an ion beam therapy apparatus according to another embodiment of the present invention, and FIG. 4B is a cross-sectional view taken along the line II ′ of FIG. 4A.

4A and 4B, the substrate 10 of the ion generating target may have a plurality of cone-shaped holes 12. That is, the plurality of cone-shaped holes 12 may be evenly distributed throughout the substrate 10. The plurality of cone-shaped holes 12 may have an arrangement arranged in a predetermined shape, but is not limited thereto.

When the laser beam 20 enters and condenses into one of the cone-shaped holes 12, the ions 32 may be accelerated at one point of the ion generation thin film 30. At this time, when the laser beam 20 enters the other cone-shaped hole 12 and focuses, ions 32 may be accelerated at another point of the ion generation thin film 30. In this way, when the laser beam 20 sequentially enters and focuses on the plurality of cone-shaped holes 12, the ions 32 may be continuously projected onto a tumor site (see 54 in FIG. 5) in the human body. Alternatively, when the laser beam 20 enters and focuses on the plurality of cone-shaped holes 12 simultaneously, the ions 32 may be projected to a large area on the tumor site in the human body.

5 is a conceptual diagram for explaining an ion beam treatment apparatus according to an embodiment of the present invention.

Referring to FIG. 5, the ion beam treatment apparatus includes a laser 40 and an ion generating target.

The laser 40 may be for generating ions 32 from the target for generating ions and projecting them to the tumor site 54 of the patient. The laser 40 may provide the laser beam 20 as a target for generating ions. The laser 40 may be disposed on the other side of the first surface of the substrate 10 opposite to the ion generation thin film 30 of the target for ion generation. The laser beam 20 may be a femtosecond laser beam.

The ion generating target may receive the laser beam 20 from the laser 40 to generate ions 32. The ion generating target may include a substrate 10 having cone-shaped holes 12 and an ion generating thin film 30 attached to one surface of the substrate 10.

The substrate 10 may have a first side and a second side opposite to the first side. The cone-shaped holes 12 may have a structure having a constant downhill slope from the first surface to the second surface so as to penetrate the substrate 10. That is, the cone-shaped hole 12 may have an inclined structure in which the diameter at the first side of the substrate 10 is larger than the diameter at the second side. The diameter of the first surface-side cone-shaped hole 12 of the substrate 10 may be about several tens of micrometers, and the diameter of the second surface-side cone-shaped hole 12 of the substrate 20 may range from several tens of nm to several μm. Here, one end of the first surface side cone hole 12 of the substrate 10 is an entrance hole (see 11 in FIG. 1) through which the laser beam 20 enters, and a second surface side cone hole of the substrate 10 is present. The other end of 12 is an exit port (see 13 in FIG. 1) from which a laser beam is emitted.

The substrate 10 may include a metal material having a very high electrical conductivity. The metal material may include silver, copper, gold or aluminum. Surfaces of the substrate 10 exposed by the cone holes 12 may be mirrored. The cone-shaped holes 12 serve to enhance the energy, that is, the intensity of the laser beam by concentrating the laser beam, and the higher the reflectance of the laser beam by the cone-shaped hole 12, the higher the intensity of the laser beam. This is because the degree is large. In addition, since the cone-shaped hole 12 has an inclined structure, it can have the effect of focusing the laser beam like a convex lens. In other words, the cone-shaped hole 12 serves as a laser cavity. Accordingly, the laser beam is focused by the cone-shaped hole 12 narrowing in the direction of travel of the laser beam, so that its intensity can be increased.

The substrate 10 may include an insulating material. Insulating materials may include glass, silicone, polymers, and the like. When the substrate 10 includes an insulating material, the substrate 10 may further include cone-shaped metal thin films (see 15 of FIG. 2) provided on inner surfaces of the substrate 10 exposed by the cone-shaped holes 12. The cone-shaped metal thin film may have silver, copper, gold or aluminum, which is a metal material having a very high electrical conductivity. The inner diameter of the first surface side cone-shaped metal thin film of the substrate 10 may be about several tens of micrometers, and the inner diameter of the second surface side cone-shaped metal thin film of the substrate 20 may range from several tens of nm to several μm. The inner circumferential surfaces of the cone-shaped metal thin films may be mirrored. This may be for imparting the same effect to the cone metal thin film as the cone hole 12 described above. In other words, the cone-shaped metal thin film acts as a laser cavity. Accordingly, the laser beam 20 is focused by the cone-shaped metal thin film narrowing in the advancing direction of the laser beam 20, the intensity can be increased.

The incident laser beam 20 is enhanced in intensity by the cone-shaped hole 12 or the cone-shaped metal thin film, and the ion generating thin film 30 may generate ions 32 by the increased laser beam. Ions 32 may be protons or carbon ions. Ions 32 may be protons or carbon ions.

When the ions 32 are protons, the ion generating thin film 30 may be a material containing hydrogen. The material containing hydrogen may be silicon nitride, silicon oxide or metal. In addition, when the ions 32 are carbon ions, the ion generating thin film 30 may include graphene, fullerenes in which carbon atoms are spherical or columnar, or carbon nanotubes.

The cone-shaped hole 12 of the substrate 10 may focus the laser beam 20 on the ion generation thin film 30 to increase its intensity. The laser beam (see 21 in FIG. 2) whose intensity is enhanced by the cone-shaped hole 12 may transfer energy to the ion generation thin film 30. Accordingly, the ions 32 generated from the ion generating thin film 30 of the ion generating target may be protons or carbon ions having high energy of tens to hundreds of MeV. That is, since the ions 32 generated from the ion generating thin film 30 of the ion generating target may have energy controlled by the shape of the cone-shaped holes 12, the tumor site 54 in the body of the patient. Can be stopped and collide with it.

The ion 32 is a magnetic resonance imaging apparatus (MRI), a computer tomography apparatus (CT), a positron emission tomography apparatus (Positron) that is used to diagnose a patient's tumor site 54 Emission Tomography (PET) can be set and projected at the location of the tumor site 54 obtained from an imaging device such as an ultrasound (ultrasonics wave) device.

The therapeutic principle of the ion beam treatment device is that the laser beam 20 provided from the laser 40 enters the cone-shaped hole 12 of the substrate 10 of the ion generating target, and the laser is enhanced in the cone-shaped hole 12. The ions 32 are generated from the ion generating thin film 30 by the beam and projected toward the patient's body, and the ions 32 projected into the patient's body are, as shown, by the principle of Bragg peak. By stopping at, and colliding with, the tumor site 54 in the body, the ions 32 may be to generate free radicals to disturb the tumor cells at the tumor site 54.

That is, the ions 32 may collide with the tumor site 54 to generate free radicals to disrupt tumor cells at the tumor site 54, thereby inhibiting the growth of tumor cells or necrosing the tumor cells. . Disturbing the tumor cells of the tumor site 54 by the ions 32 may be to disturb the DNA double helix of the tumor cells or to disrupt metabolic processes in the nucleus of the tumor cells.

The generation and projection processes of the ions 32 are performed by the laser beam extended in the cone-shaped hole 12 when the laser beam 20 is incident into the cone-shaped hole 30 of the substrate 10 of the ion generating target. Hydrogen atoms or carbon ions included in the generating thin film 30 are changed into a plasma state in which the cations 32 and the anions (not shown) are separated by the energy of the laser beam, which is increased. By moving farther than the cations 32 from the ion generating thin film 30, an electric field is generated by a capacitor effect between the cations 32 and the anions, and by the electric field the cations ( 32) can be accelerated towards the negative ions so that the cations 32 have enough energy to be projected from the patient's body to the tumor site 54 in the body.

The accelerated cations 32 impinge on the tumor site 54 in the patient's body and generate free radicals to disrupt tumor cells at the tumor site 54, thereby inhibiting the growth of tumor cells, or Necrosis can be. Accordingly, the tumor area 54 in the patient's body may be treated.

Since the ion generating target according to the embodiment of the present invention has a cone-shaped hole, the intensity of the laser beam incident on the ion generating target may be enhanced. Accordingly, a target for ion generation that can generate high energy protons or carbon ions without increasing the output of the laser can be provided.

In addition, the ion beam treatment apparatus according to the embodiment of the present invention can project high-energy protons or carbon ions to a tumor site of a patient by using a target for generating an ion having a cone-shaped hole. Thus, an ion beam therapy apparatus capable of treating a patient's tumor at a low cost can be provided.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood. It is therefore to be understood that the above-described embodiments are illustrative and non-restrictive in every respect.

10: substrate
11: entrance
12: cone hole
13 exit door
15: metal thin film
20: laser beam
21: enhanced laser beam
30: thin film for ion generation
31: Augmented and Higher Harmonized Laser Beam
32: ion
33: inert gas
40: laser
54 tumor site

Claims (20)

A substrate having a first face and a second face opposite the first face, the substrate having a cone-shaped hole narrowed from the first face toward the second face to penetrate therethrough, the inner wall of which is made of metal; And
And a thin film for generating ions attached to the second surface of the substrate and generating ions by an augmented laser beam that enters into the cone-shaped hole of the first surface of the substrate. The method of claim 1,
The substrate is a target for generating ions comprising a metal material. The method of claim 2,
The metal material target for generating ions comprising silver, copper, gold or aluminum. The method of claim 1,
The substrate is an ion generating target containing an insulating material. 5. The method of claim 4,
And a cone-shaped metal thin film provided on an inner surface of the substrate exposed by the cone-shaped hole. 6. The method of claim 5,
The cone-shaped metal thin film is a target for generating ions containing silver, copper, gold or aluminum. 6. The method of claim 5,
An inner circumferential surface of the cone-shaped metal thin film is a mirror-treated target for generating ions. The method of claim 1,
The inner wall of the substrate exposed by the cone-shaped holes is mirror-treated ion generation target. The method of claim 1,
An ion generating target further comprising an inert gas provided inside the cone-shaped hole. The method of claim 1,
The diameter of the cone-shaped hole on the side of the first surface of the substrate is several tens of micrometers, and
The diameter of the cone-shaped hole on the side of the second surface of the substrate is a target for ion generation in the range of several tens nm to several μm. The method of claim 1,
The ion is a target for generating ions that are protons or carbon ions. 12. The method of claim 11,
The ion is a proton, the ion generating thin film is a target for generating ions is hydrogen-containing material. 13. The method of claim 12,
The hydrogen-containing material is silicon nitride, silicon oxide or a metal ion generating target. 12. The method of claim 11,
The ion is a carbon ion, the ion generating thin film is a graphene, ion generation target that is a material containing a fullerine, or carbon nanotubes in which spherical or columnar carbon atoms are connected. The method of claim 1,
And the substrate has a plurality of cone-shaped holes, wherein the plurality of cone-shaped holes have an aligned arrangement. Claim 1 ion generation target; And
A laser for injecting a laser beam into the cone-shaped hole of the first surface of the substrate for generating ions from the ion generating thin film and projecting them to a tumor site of the patient,
And an intensity of the laser beam incident to the inside of the cone-shaped hole is increased by focusing by the cone-shaped hole, and the ion is emitted from the thin film for ion generation by the enhanced laser beam. 17. The method of claim 16,
And an inner wall of the substrate exposed by the cone hole is mirror-treated. 17. The method of claim 16,
And an inert gas provided inside the cone-shaped hole. 17. The method of claim 16,
And the laser is disposed on the first side of the substrate. 17. The method of claim 16,
Wherein the laser beam is a femtosecond laser beam.

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