KR101923977B1 - Target for Generating Ion and Treatment Apparatus Using the Same - Google Patents

Abstract

A target for ion generation and a therapeutic apparatus using the same are provided. The treatment apparatus includes a substrate having a first surface and a second surface opposite the first surface, the substrate having a cone-shaped hole whose interior wall is narrowed from the first surface toward the second surface so as to penetrate the first surface and the first surface, A thin film for ion generation which is attached to two surfaces of the substrate and generates ions by a laser beam that is incident on a cone-shaped hole on the first surface of the substrate and is augmented; and a thin film for generating ions from the thin film for generating ions and projecting And a laser for entering the laser beam into the cone-shaped hole of the first surface of the substrate. The intensity of the laser beam incident into the inside of the cone-shaped hole is increased by focusing by the cone-shaped hole, and ions are emitted from the ion generating thin film by the enhanced laser beam.

Description

Technical Field [0001] The present invention relates to a target for generating ions,

The present invention relates to a target for generating ions and a therapeutic apparatus using the target, and more particularly to a target for generating protons or carbon ions and an ion beam therapy apparatus using the same.

There are X-ray, electron beam and ion beam therapies in radiation treatment methods. X-ray therapy is currently the most commonly used radiotherapy method because it is the cheapest method that can be implemented using the simplest devices. Although electron accelerating accelerators have been shown to be able to treat tumors when injected into tumors in the 1950s, electron beam therapy has become one of the methods of radiation therapy in earnest by realizing miniaturization of electron accelerators in the 1980s. I was caught. On the other hand, X-ray therapy or electron beam therapy has disrupted hydrogen bonds in cancer cells by breaking hydrogen bonds in cancer cells, but it has accompanied side effects that seriously damage healthy cells present in the pathway. Techniques such as Intensity-Modulated Radiation Therapy (IMRT) or tomotherapy (Tomo Therapy) and Cyber Knife have been developed as methods for reducing the exposure problem to these normal cells. However, It was not completely resolved.

Ion beam therapy is attracting attention as a treatment tool to alleviate side effects in x-ray therapy or electron beam therapy. In order for the ion beam to penetrate the material, it must accelerate as fast as the electrons and have a high speed. Although the ion beam will gradually decrease in speed when it passes through certain materials, the ion beam experiences the most energy loss of ionizing radiation just before stopping. This phenomenon is called Bragg Peak, in the name of William Henry Bragg, who discovered it in 1903. Therefore, in the case of ion beam therapy, selective and local treatment of malignant tumors is possible when the velocity of ions is precisely controlled. When the tumor is located deep in the body, it is necessary to accelerate proton or ions of very large energy outside the body. One of the methods of accelerating such protons or ions is laser driven ion acceleration. When a high-power laser beam is irradiated onto a thin film, ions or protons in the thin film are accelerated by a target normal sheath acceleration model (TNSA model) or a radiation pressure acceleration model (RPA model) And escape out. The escaped ions pass through the patient's body as much energy as they have and stop at a certain depth at which the tumor is located. It is known that a large amount of free oxygen radicals are generated in the stationary region, It becomes the principle of treatment.

In ion beam therapy using laser induced ion acceleration method, ions have two properties. In order to inject deeper ions into the body, it must be a high energy ion and most of the ions must have the same energy. Proton penetrates 20 cm of the body at an energy of 250 MeV. High energy ions, such as 70 MeV, are required for treatment of cancer of the organs, and high energy ions of more than 200 MeV are needed for treatment of deep cancer.

Also, the energy of most proton or ions induced by the femto second laser must be uniform. If it is not uniform, ions can not accumulate only at the tumor site, and normal tissues may be exposed to ions.

In order to satisfy these two reasons, the thickness of the target as a source of ions must be very small. Therefore, the target should be an ultra thin film.

The energy of the laser for accelerating these ions should have a very large energy of 10 ¹⁹ to 10 ²¹ W / cm ² . This means a very large laser system and means a large budget.

The object of the present invention is to provide a target for generating ions capable of generating high-energy protons or carbon ions, and an ion beam treatment apparatus using the same.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

In order to achieve the above object, the present invention provides a target for generating ions. The target has a substrate having a first surface and a second surface opposite the first surface and having a cone-shaped hole narrowing from the first surface toward the second surface to penetrate therethrough, an inner surface of the substrate exposed by the cone- And a thin film for generating an ion which is attached to the second surface of the substrate and generates ions by the laser beam incident on the first surface of the substrate in the cone-shaped metal thin film and reinforced by the laser beam.

The cone-shaped metal foil may comprise silver, copper, gold or aluminum.

The inner peripheral surface of the cone-shaped metal thin film can be mirror-finished.

The substrate may comprise an insulating material.

And may further include an inert gas provided inside the cone-shaped metal thin film.

The inner diameter of the cone-shaped metal thin film on the first surface side of the substrate may be several tens of microns and the inner diameter of the cone-shaped metal thin film on the second surface side of the substrate may be in the range of several tens nm to several microns.

Ions may be protons or carbon ions.

The ion may be a proton, and the ion generating thin film may be a substance containing hydrogen. The hydrogen containing material may be silicon nitride, silicon oxide or metal.

The ion is a carbon ion, and the ion generating thin film may be a material including graphene, fullerene in which carbon atoms are connected in a spherical or pillar shape, or carbon nanotubes.

The substrate has a plurality of cone-shaped holes, and the plurality of cone-shaped holes may have an aligned arrangement.

In order to achieve the above object, another aspect of the present invention provides a target for generating ions. The target having a first surface and a second surface opposite the first surface and having a conical hole narrowing from the first surface toward the second surface to penetrate therethrough and a second surface attached to the second surface of the substrate, And an ion generation thin film which is incident on the inside of the cone-shaped hole on the first surface of the substrate and generates ions by the enhanced laser beam.

The surface of the metal substrate exposed by the cone-shaped hole can be mirror finished.

The metal substrate may comprise silver, copper, gold or aluminum.

And may further include an inert gas provided inside the cone-shaped hole.

The diameter of the cone-shaped hole on the first surface side of the substrate may be several tens of micrometers, and the diameter of the cone-shaped hole on the second surface side of the substrate may be in the range of several tens nm to several micrometers.

Ions may be protons or carbon ions.

The ion may be a proton, and the ion generating thin film may be a substance containing hydrogen. The hydrogen containing material may be silicon nitride, silicon oxide or metal.

The ion is a carbon ion, and the ion generating thin film may be a material including graphene, fullerene in which carbon atoms are connected in a spherical or pillar shape, or carbon nanotubes.

The metal substrate has a plurality of cone-shaped holes, and the plurality of cone-shaped holes may have an aligned arrangement.

In order to achieve the above object, the present invention provides an ion beam treatment apparatus. This treatment apparatus includes a laser for introducing a laser beam into the inside of the cone-shaped hole on the first surface of the substrate in order to generate ions from the ion generating target and the ion generating thin film, can do. The intensity of the laser beam incident on the inside of the cone-shaped hole is increased by focusing by the cone-shaped hole, and ions can be emitted from the ion generating thin film by the enhanced laser beam.

The surface of the substrate exposed by the cone-shaped hole can be mirror finished.

And may further include an inert gas provided inside the cone-shaped hole.

The laser may be disposed on the first surface side of the substrate.

The laser beam may be a femtosecond laser beam.

As described above, according to the means for solving the problem of the present invention, the ion generating target has the cone-shaped hole, so that the intensity of the laser beam incident on the ion generating target can be enhanced. Thereby, a target for generating ions capable of generating high-energy protons or carbon ions without increasing the output of the laser can be provided.

Further, according to the means for solving the problem of the present invention, by using the ion generating target having a cone-shaped hole, the ion beam treatment apparatus can project high-energy proton or carbon ions to the tumor site of the patient. Thus, an ion beam therapy apparatus capable of treating a patient's tumor at a low cost can be provided.

FIG. 1 is a perspective view for explaining a target for generating ions used in an ion beam therapy apparatus according to an embodiment of the present invention. FIG.
FIG. 2 is a cut-perspective view for explaining a phenomenon occurring in an ion generating target used in an ion beam therapy apparatus according to an embodiment of the present invention. FIG.
3 is a cut perspective view for explaining another phenomenon occurring in an ion generating target used in an ion beam therapy apparatus according to an embodiment of the present invention.
4A is a perspective view of a target for generating ions used in an ion beam therapy apparatus according to another embodiment of the present invention.
4B is a cross-sectional view taken along line I-I 'of FIG. 4A.
5 is a conceptual diagram for explaining an ion beam treatment apparatus according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in different forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the concept of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, the terms 'comprises' and / or 'comprising' mean that the stated element, step, operation and / or element does not imply the presence of one or more other elements, steps, operations and / Or additions. In addition, since they are in accordance with the preferred embodiment, the reference numerals presented in the order of description are not necessarily limited to the order. In addition, in this specification, when it is mentioned that a film is on another film or substrate, it means that it may be formed directly on another film or substrate, or a third film may be interposed therebetween.

In addition, the embodiments described herein will be described with reference to cross-sectional views and / or plan views, which are ideal illustrations of the present invention. In the drawings, the thicknesses of the films and regions are exaggerated for an effective description of the technical content. Thus, the shape of the illustrations may be modified by manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention are not limited to the specific forms shown, but also include changes in the shapes that are generated according to the manufacturing process. For example, the etched area shown at right angles may be rounded or may have a shape with a certain curvature. Thus, the regions illustrated in the figures have schematic attributes, and the shapes of the regions illustrated in the figures are intended to illustrate specific types of regions of the elements and are not intended to limit the scope of the invention.

FIG. 1 is a perspective view for explaining a target for generating ions used in an ion beam therapy apparatus according to an embodiment of the present invention. FIG.

1, the ion generating target includes a substrate 10 having a cone type hole 12 and an ion generating thin film 30 adhered on one side of the substrate 10.

The substrate 10 may have a first surface and a second surface opposite the first surface. The cone-shaped hole 12 may have a structure that narrows from the first surface toward the second surface so as to penetrate through the substrate 10. [ That is, the cone-shaped hole 12 may have a tapered structure in which the diameter on the first surface of the substrate 10 is larger than the diameter on the second surface. The diameter of the first surface side conical hole 12 of the substrate 10 is about several tens of micrometers and the diameter of the second surface side conical hole 12 of the substrate 20 is in the range of several tens nm to several micrometers. One end of the first surface-side cone-shaped hole 12 of the substrate 10 is an incidence hole 11 through which a laser beam (see 20 in FIG. 2) enters, and the second surface- And the other end of the laser beam 12 is an emission port 13 through which a laser beam is emitted.

The substrate 10 may comprise a metal material with a very high electrical conductivity. The metal material may include silver (Ag), copper (Cu), gold (Au), or aluminum (Al). The surface of the substrate 10 exposed by the cone-shaped hole 12 may be mirror-like finishing. The cone-shaped hole 12 serves to increase the energy of the laser beam by focusing the incoming laser beam. The higher the reflectance of the laser beam by the cone-shaped hole 12, Is increased. Further, since the cone-shaped hole 12 has an inclined structure, it can have an effect of concentrating the laser beam like a convex lens. That is, the cone-shaped hole 12 serves as a laser cavity. Thus, the laser beam is focused by the cone-shaped hole 12 narrowing in the traveling direction of the laser beam, so that the intensity thereof can be increased.

The substrate 10 may comprise an insulating material. The insulating material may include glass, silicon, polymer, and the like. (See 15 in FIG. 2) provided on the inner surface of the substrate 10 exposed by the cone-shaped hole 12, when the substrate 10 contains an insulating material. The cone-shaped metal thin film may have silver, copper, gold or aluminum, which is a metal material having a very high electrical conductivity. The inner diameter of the first surface-side conical metal thin film of the substrate 10 may be several tens of micrometers and the inner diameter of the second surface-side conical metal thin film of the substrate 10 may be in the range of several tens nm to several micrometers. The inner peripheral surface of the cone-shaped metal thin film can be mirror-finished. This may be for imparting the same effect as the above-described cone-shaped hole 12 to the cone-shaped metal thin film. That is, the cone-shaped metal thin film acts as a laser cavity. As a result, the laser beam can be focused by the cone-shaped metal thin film narrowing in the advancing direction of the laser beam, and its intensity can be enhanced.

The ion generating thin film 30 may be in a form adhered on the second side of the substrate 10. The intensity of the incident laser beam (see 20 in FIG. 3) is enhanced by the cone-shaped hole 12 or the cone-shaped metal thin film, and the ion generating thin film 30 is irradiated with ions (refer to 32 in FIG. 3) Can be generated. Ions may be protons or carbon ions.

When the ion is a proton, the ion generating thin film 30 may be a substance containing hydrogen (H). The material containing hydrogen may be silicon nitride, silicon oxide or metal. In addition, when the ion is a carbon ion, the ion generating thin film 120 may include graphene, fullerenes in which carbon atoms are connected in a spherical or pillar shape, or carbon nanotubes .

FIG. 2 is a cut-perspective view for explaining a phenomenon occurring in an ion generating target used in an ion beam therapy apparatus according to an embodiment of the present invention. FIG.

2, when the laser beam 20 enters the entrance 11 of the cone-shaped hole 12 of the ion-generating target substrate 10, the cone-shaped hole 12, which acts as a laser cavity, Its strength can be enhanced. The enhanced laser beam 21 can transmit energy to the ion generating thin film 30 attached to the exit port 13 side. As shown, when the substrate 10 comprises an insulating material, the previously described cone-shaped metal foil 15 may be provided on the inner surface of the substrate 10 exposed by the cone-shaped hole 12. As a result, ions (see 32 in FIG. 3) can be generated from the ion generating thin film 30. At this time, the intensity of the enhanced laser beam 21 may be several to several hundred times greater than the intensity of the laser beam 20 entering the incidence hole 11. [

3 is a cut perspective view for explaining another phenomenon occurring in an ion generating target used in an ion beam therapy apparatus according to an embodiment of the present invention.

2, an inert gas (He, Ne, Ar, Kr, Xe, etc.) 33 is supplied at a constant pressure to the inside of the cone hole 12 of the substrate 10 for generating an ion .

The inert gas 33 is excited by the energy of the laser beam 20 entering the cone-shaped hole 12 and then emitted by a higher order harmonic wave 31 whose frequency is multiplied by the emitting photons. Can be generated. The atoms contained in the ion generating thin film 30 are subjected to the ionization process by the laser beam 31 with the high and low harmonics and the ions 32 are converted into ions 32 by the high harmonic waves It can be accelerated with a large energy and projected onto the tumor site (refer to 54 in Fig. 5) in the human body.

FIG. 4A is a perspective view for explaining a target for generating ions used in an ion beam therapy apparatus according to another embodiment of the present invention, and FIG. 4B is a sectional view taken along the line I-I 'of FIG. 4A.

Referring to FIGS. 4A and 4B, the substrate 10 for ion generation target may have a plurality of cone-shaped holes 12. That is, the plurality of cone-shaped holes 12 can be evenly distributed throughout the substrate 10. [ The plurality of cone-shaped holes 12 may have an arrangement arranged in a uniform form, but is not limited thereto.

When the laser beam 20 enters and condenses into one of the conical holes 12, the ions 32 can be accelerated at one point of the ion generating thin film 30. At this time, when the laser beam 20 enters and condenses into the other one of the conical holes 12, the ions 32 can be accelerated at another point of the ion generating thin film 30. When the laser beam 20 is successively focused into the plurality of cone-shaped holes 12 in this way, the ions 32 can be projected successively to the tumor site (see 54 in Fig. 5) in the human body. Alternatively, if the laser beam 20 is concurrently focused on the plurality of cone-shaped apertures 12, the ions 32 may be projected over a large area on the tumor site within the human body.

5 is a conceptual diagram for explaining an ion beam treatment apparatus according to an embodiment of the present invention.

Referring to FIG. 5, the ion beam therapy apparatus includes a laser 40 and a target for generating ions.

The laser 40 may be for generating ions 32 from a target for generating ions and projecting it to the tumor region 54 of the patient. The laser 40 may provide a laser beam 20 as a target for generating ions. The laser 40 may be disposed on the other side of the first surface of the substrate 10 opposite to the ion generating thin film 30 of the ion generating target. The laser beam 20 may be a femtosecond laser beam.

The target for ion generation can generate the ions 32 by receiving the laser beam 20 from the laser 40. The target for generating an ion may include a substrate 10 having cone-shaped holes 12 and a thin film 30 for generating ions attached on one side of the substrate 10.

The substrate 10 may have a first surface and a second surface opposite the first surface. The cone-shaped holes 12 may have a structure with a constant downward tilt from the first surface toward the second surface to penetrate the substrate 10. [ That is, the cone-shaped hole 12 may have an inclined structure in which the diameter on the first surface of the substrate 10 is larger than the diameter on the second surface. The diameter of the first surface side conical hole 12 of the substrate 10 is about several tens of micrometers and the diameter of the second surface side conical hole 12 of the substrate 20 is in the range of several tens nm to several micrometers. One end of the first side surface conical hole 12 of the substrate 10 is an incidence hole (see 11 in Fig. 1) through which the laser beam 20 enters, and the second surface side conical hole 12 of the substrate 10 And the other end of the laser beam 12 is an exit port (refer to 13 in Fig.

The substrate 10 may comprise a metal material with a very high electrical conductivity. The metal material may include silver, copper, gold or aluminum. The surfaces of the substrate 10 exposed by the cone-shaped holes 12 can be mirror finished. This is because the cone-shaped holes 12 serve to increase the energy of the laser beam, that is, the intensity of the laser beam, by focusing the incoming laser beam. The higher the reflectance of the laser beam by the cone- Is more likely to be. Further, since the cone-shaped hole 12 has an inclined structure, it can have an effect of concentrating the laser beam like a convex lens. That is, the cone-shaped hole 12 serves as a laser cavity. Thus, the laser beam is focused by the cone-shaped hole 12 narrowing in the traveling direction of the laser beam, so that the intensity thereof can be increased.

The substrate 10 may comprise an insulating material. The insulating material may include glass, silicon, polymers, and the like. Shaped metal foils (see 15 in FIG. 2) provided on the inner surfaces of the substrate 10 exposed by the cone-shaped holes 12 when the substrate 10 contains an insulating material. The cone-shaped metal thin film may have silver, copper, gold or aluminum, which is a metal material having a very high electrical conductivity. The inner diameter of the first surface-side conical metal thin film of the substrate 10 may be several tens of micrometers and the inner diameter of the second surface-side conical metal thin film of the substrate 20 may be in the range of several tens nm to several micrometers. The inner circumferential surfaces of the cone-shaped metal thin films can be mirror-finished. This may be for imparting the same effect as the above-described cone-shaped hole 12 to the cone-shaped metal thin film. That is, the cone-shaped metal thin film acts as a laser cavity. Accordingly, the laser beam 20 is focused by the cone-shaped metal thin film narrowing in the traveling direction of the laser beam 20, so that the intensity thereof can be enhanced.

The intensity of the incident laser beam 20 is enhanced by the cone-shaped hole 12 or the cone-shaped metal thin film, and the ion generating thin film 30 can generate the ions 32 by the laser beam that has been developed. The ions 32 may be protons or carbon ions. The ions 32 may be protons or carbon ions.

When the ion 32 is a proton, the ion generating thin film 30 may be a substance containing hydrogen. The hydrogen containing material may be silicon nitride, silicon oxide or metal. When the ions 32 are carbon ions, the ion generating thin film 30 may include graphene, fullerene in which carbon atoms are connected in a spherical or pillar shape, or carbon nanotubes.

The cone-shaped hole 12 of the substrate 10 can focus the laser beam 20 on the ion-generating thin film 30 to intensify the intensity thereof. The laser beam (see 21 in Fig. 2) whose intensity is enhanced by the cone-shaped hole 12 can transfer energy to the ion generating thin film 30. [ Accordingly, the ions 32 generated from the ion-generating thin film 30 of the target for generating an ion may be protons or carbon ions having a high energy of several tens to several hundreds of MeV. That is, the ions 32 generated from the ion generating thin film 30 of the target for generating an ion may have energy adjusted by the shape of the cone-shaped holes 12, so that the tumor region 54 in the patient's body, And may collide with it.

Ion 32 may be used to detect the tumor region 54 of a patient using magnetic resonance imaging (MRI), computer tomography (CT), positron emission tomography (Positron) And may be set and projected at the location of the tumor site 54 obtained from an imaging device such as an ultrasound wave device, an Emission Tomography (PET), or an ultrasonic wave device.

The treatment principle of the ion beam therapy apparatus is such that the laser beam 20 provided from the laser 40 enters the cone-shaped hole 12 of the substrate 10 for ion generation target and the enhanced laser Ions 32 are generated from the ion generating thin film 30 by the beam and projected toward the inside of the patient's body and the ions 32 projected into the body of the patient are irradiated by the principle of Bragg peak The ions 32 may stop generating at the tumor sites 54 in the body of the tumor 54 and collide therewith to generate reactive oxygen species to disturb the tumor cells of the tumor site 54.

That is, ions 32 may collide with tumor site 54 to generate active oxygen species and disturb tumor cells in tumor site 54, thereby inhibiting the growth of tumor cells or necrosis tumor cells . Disturbing tumor cells in tumor site 54 by ion 32 may be disturbing the DNA double helix of tumor cells or disturbing the metabolic process in the nucleus of tumor cells.

The generation and projection processes of the ions 32 are performed by a laser beam propagated in the cone-shaped hole 12 when the laser beam 20 is incident into the cone-shaped hole 30 of the substrate 10 for generating an ion, The hydrogen atoms or carbon ions contained in the generating thin film 30 are changed into a plasma state in which they are separated into cations 32 and anions (not shown) by the energy of an evolved laser beam. In this process, The electric field is generated by the capacitor effect between the positive ions 32 and the anions by moving away from the ions generating thin film 30 farther than the positive ions 32 and by this electric field, 32 may be accelerated toward the anions so that the cations 32 have enough energy to be projected outside the patient's body to the tumor site 54 in the body.

The accelerated cations 32 collide with the tumor site 54 in the patient's body and inhibit the growth of the tumor cells by generating active oxygen to disturb the tumor cells of the tumor site 54, It can be necrotizing. Thereby, the effect of treating the tumor portion 54 in the patient's body may appear.

The ion generating target according to the embodiment of the present invention has a cone-shaped hole, so that the intensity of the laser beam incident on the ion generating target can be increased. Thereby, a target for generating ions capable of generating high-energy protons or carbon ions without increasing the output of the laser can be provided.

Further, the ion beam therapy apparatus according to the embodiment of the present invention can project high-energy proton or carbon ions to a tumor site of a patient by using an ion generating target having a cone-shaped hole. Thus, an ion beam therapy apparatus capable of treating a patient's tumor at a low cost can be provided.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood. It is therefore to be understood that the above-described embodiments are illustrative and non-restrictive in every respect.

10: substrate
11: Incoming District
12: Cone hole
13: Outgoing District
15: metal thin film
20: laser beam
21: Enhanced laser beam
30: thin film for generating ions
31: Enhanced and higher order harmonized laser beam
32: ion
33: Inert gas
40: Laser
54: tumor site

Claims (20)

A substrate comprising a first surface and a second surface opposite the first surface; And
And an ion generation thin film attached to the second surface of the substrate and generating an ion beam by a laser beam passed through the substrate,
The substrate comprising:
And a laser beam incident on the first surface, the laser beam having a first diameter,
An emission port disposed on the second surface and having a first diameter smaller than the first diameter, for emitting the laser beam to the ion generating thin film; And
And a reflector having a reflectivity higher than that of the first and second surfaces, the reflector having a reflectance higher than that of the first and second surfaces, the reflector having a reflectivity higher than that of the first and second surfaces, Further comprising a cone-shaped hole defined by an inner wall of the substrate and concentrating the laser beam in the incidence hole to the exit port,
Wherein the ion generating thin film has an exposure area of the laser beam defined by the exit aperture by blocking the exit aperture on the second surface and blocking the cone hole so that when the laser beam is provided in the cone hole The ion beam having a beam size equal to or smaller than the second diameter smaller than the first diameter is emitted in a direction opposite to the cone-shaped hole. The method according to claim 1,
Wherein the substrate comprises a metallic material. 3. The method of claim 2,
Wherein the metal material comprises silver, copper, gold or aluminum. The method according to claim 1,
Wherein the substrate comprises an insulating material. 5. The method of claim 4,
And a cone-shaped metal foil provided on an inner surface of the substrate exposed by the cone-shaped hole. 6. The method of claim 5,
Wherein the cone-shaped metal thin film comprises silver, copper, gold or aluminum. 6. The method of claim 5,
Wherein the inner peripheral surface of the cone-shaped metal thin film is mirror-finished. The method according to claim 1,
And an inner wall of the substrate exposed by the cone-shaped hole is mirror-finished. The method according to claim 1,
And an inert gas provided inside the cone-shaped hole. The method according to claim 1,
The first diameter of the incidence orifice is several tens of micrometers, and
And the second diameter of the exit port ranges from several tens of nanometers to several micrometers. The method according to claim 1,
Wherein the ion beam comprises a proton or carbon ion. 12. The method of claim 11,
Wherein the ion beam comprises a proton, and the ion generating thin film comprises a substance containing hydrogen. 13. The method of claim 12,
Wherein the hydrogen containing material is silicon nitride, silicon oxide or metal. 12. The method of claim 11,
Wherein the ion beam includes carbon ions, and the ion generating thin film is a material containing graphene, fullerene in which carbon atoms are spherically or columnarly connected, or carbon nanotube. The method according to claim 1,
Said substrate having a plurality of cone-shaped apertures, said plurality of cone-shaped apertures having an aligned arrangement. A laser for generating a laser beam; And
And an ion generating target for receiving the laser beam to generate an ion beam,
The ion generating target includes:
A substrate comprising a first surface and a second surface opposite the first surface; And
And an ion generating thin film attached to the second surface of the substrate and generating the ion beam by a laser beam passed through the substrate,
The substrate comprising:
And a laser beam incident on the first surface, the laser beam having a first diameter,
An emission port disposed on the second surface and having a first diameter smaller than the first diameter, for emitting the laser beam to the ion generating thin film; And
And a reflector having a reflectivity higher than that of the first and second surfaces, the reflector having a reflectance higher than that of the first and second surfaces, the reflector having a reflectivity higher than that of the first and second surfaces, Further comprising a cone-shaped hole defined by an inner wall of the substrate and concentrating the laser beam in the incidence hole to the exit port,
Wherein the ion generating thin film has an exposure area of the laser beam defined by the exit aperture by blocking the exit aperture on the second surface and blocking the cone hole so that when the laser beam is provided in the cone hole Generating the ion beam of a beam size equal to or smaller than the second diameter smaller than the first diameter,
The intensity of the laser beam incident into the cone-shaped hole is increased by focusing by the cone-shaped hole, and the ion beam is emitted from the ion generating thin film by the enhanced laser beam. 17. The method of claim 16,
And an inner wall of the substrate exposed by the cone-shaped hole is mirror-finished. 17. The method of claim 16,
And an inert gas provided inside the cone-shaped hole. 17. The method of claim 16,
And the laser is disposed on the first surface side of the substrate. 17. The method of claim 16,
Wherein the laser beam is a femtosecond laser beam.

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