KR20130079804A - White light emitting device, display apparatus and illumination apparatus - Google Patents

White light emitting device, display apparatus and illumination apparatus Download PDF

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Publication number
KR20130079804A
KR20130079804A KR1020120000520A KR20120000520A KR20130079804A KR 20130079804 A KR20130079804 A KR 20130079804A KR 1020120000520 A KR1020120000520 A KR 1020120000520A KR 20120000520 A KR20120000520 A KR 20120000520A KR 20130079804 A KR20130079804 A KR 20130079804A
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light emitting
white light
light
emitting device
wavelength
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KR1020120000520A
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Korean (ko)
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고건유
장규호
김영택
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삼성전자주식회사
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Publication of KR20130079804A publication Critical patent/KR20130079804A/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133615—Edge-illuminating devices, i.e. illuminating from the side
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)

Abstract

According to an aspect of the present invention, a blue light emitting diode emitting blue light having a peak wavelength of 430 to 460 nm, a first wavelength conversion material excited by the blue light to emit green light, and red light excited by the blue light White light obtained from the mixture of the light excited with the second wavelength conversion material, wherein the blue light is excited, the first peak wavelength in the wavelength band of 615 to 650 nm and the second peak wavelength in the wavelength band of 525 to 545 nm. And a lowest relative intensity between the first and second peak wavelengths is 0.08 or less of the relative intensity of the blue peak.

Description

White light emitting device and display and lighting device using same {WHITE LIGHT EMITTING DEVICE, DISPLAY APPARATUS AND ILLUMINATION APPARATUS}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a white light emitting device, and more particularly, to a white light emitting device that provides white light having excellent color characteristics, and a display device and a lighting device using the same.

In general, the phosphor material for wavelength conversion is used as a material for converting specific wavelength light of various light sources into the desired wavelength light. In particular, since light emitting diodes among various light sources can be advantageously applied as LCD backlights, automobile lights, and home lighting devices due to low power driving and excellent light efficiency, phosphor materials have recently been spotlighted as a core technology for manufacturing white light emitting devices.

In general, white light emitting devices are manufactured by applying one or more phosphors (eg, red, yellow or green) to short wavelength LED chips such as blue or ultraviolet light. The white light thus obtained needs to satisfy various color characteristics required in a display or an illumination device. These color characteristics may vary greatly depending on the type of phosphor and combinations thereof.

For example, better color reproducibility can be expected when using two or more phosphors (eg, a combination of red phosphors and one or more other phosphors) rather than a single phosphor (e.g. yellow phosphors). On the other hand, there is a problem that the visibility is lowered as well as the efficiency is lower than when using the yellow phosphor.

On the other hand, since white light emitting devices using LEDs are exposed to high temperature conditions, reliability problems such as temperature stability of phosphors used are important. This temperature stability problem can be a big problem at high power usage conditions. Therefore, the selection of the type of phosphor considering these conditions is required.

In the art, there is a demand for an excellent white light emitting device capable of satisfying color characteristics for natural white light with excellent color reproducibility, a display device and an illumination device using the same.

According to an aspect of the present invention, a blue light emitting diode emitting blue light having a peak wavelength of 430 to 460 nm, a first wavelength conversion material excited by the blue light to emit green light, and red light excited by the blue light A second wavelength converting material comprising a second wavelength converting material which emits light, wherein the white light obtained from the mixture of the excited light together with the blue light has a second peak wavelength in at least the wavelength range of 615-650 nm and the first peak wavelength in the wavelength band of 525-545 nm. And a lowest relative intensity between the first and second peak wavelengths is 0.08 or less of the relative intensity of the blue peak.

Preferably, the first wavelength converting material includes at least one of β-SiAlON phosphor, (Ba, Sr) SiO 4 : Eu phosphor, SrGa 2 S 4 : Eu phosphor, and semiconductor quantum dots, and the second wavelength converting material Silver includes at least one of a sulfide-based phosphor, a fluoride-based phosphor, and a semiconductor quantum dot.

The half value width of the green light may be 60 nm or less, and the half value width of the red light may be 110 nm or less.

The color reproducibility of the white light may be preferably 90% or more relative to the NTSC area, and more preferably 95% or more relative to the NTSC area.

Another aspect of the present invention includes an LED light source module and an image display panel for irradiating light from the LED light source module and displaying an image, wherein the LED light source module is mounted on a circuit board and the circuit board. It provides a display device comprising at least one white light emitting device described above.

Another aspect of the invention, the LED light source module, and disposed above the LED light source module, the diffusion unit for uniformly diffusing the light incident from the LED light source module; includes, the LED light source module, the circuit Provided is a lighting device comprising a substrate and at least one white light emitting device mounted on the circuit board.

By lowering the peak intensity of the color mixing region, color reproducibility is improved, and in the display device, the LCD transmittance can be further improved. In particular, by selecting a specific combination of the wavelength conversion material can be more effectively improved color reproducibility while exhibiting the desired spectral characteristics.

1 is a schematic view showing a white light emitting device according to an embodiment of the present invention.
2 shows an example of a spectrum of white light emitted from a white light emitting device according to an embodiment of the present invention.
3A shows a spectrum of white light emitted from a white light emitting device according to an embodiment of the present invention (Example 1).
3B shows a spectrum of white light emitted from a white light emitting device according to a comparative example (Comparative Example 1) outside the scope of the present invention.
4A and 4B show a spectrum of white light emitted from a white light emitting device according to another embodiment of the present invention (Examples 2A and 2B).
5A and 5B show a spectrum of white light emitted from a white light emitting device according to another embodiment of the present invention (Examples 3A and 3B).
6A and 6B show a spectrum of white light emitted from a white light emitting device according to another embodiment of the present invention (Examples 4A and 4B).
7A and 7B show a spectrum of white light emitted from a white light emitting device according to another embodiment (Examples 5A and 5B) of the present invention.
8 shows a spectrum of white light emitted from a white light emitting device according to a comparative example (Comparative Example 2) outside the scope of the present invention.
9A-9C are schematic diagrams each illustrating a white light emitting device according to various embodiments of the present invention.
Fig. 10 is a schematic diagram showing a white light emitting device according to a specific embodiment (including quantum dots) of the present invention.
11A and 11B illustrate various types of backlight units that may be employed in the display device according to the present invention.
12 is an exploded perspective view showing an LCD display device according to an embodiment of the present invention.
13A to 13C are cross-sectional views illustrating various types of backlight units that may be employed in the display device according to the present invention.

Hereinafter, various embodiments of the present invention will be described in more detail with reference to the accompanying drawings.

1 is a schematic view showing a white light emitting device according to an embodiment of the present invention.

The white light emitting device 10 shown in FIG. 1 includes a blue light emitting diode 15 and a resin package 19 having a lens shape convex upwardly.

The resin packaging unit 19 employed in the present embodiment includes a first wavelength conversion material 12 excited by the blue light and emitting green light, and a second wavelength conversion material excited by the blue light and emitting red light ( 14). At least one of the first and second wavelength converting materials 12 and 14 may be a ceramic phosphor or a semiconductor quantum dot.

The resin packaging unit 19 may have a hemispherical lens shape so as to secure a wide orientation angle. The blue light emitting diode 15 may be directly mounted on a separate circuit board. The resin packaging unit 19 may be made of a silicone resin, an epoxy resin, or a combination thereof.

In the present embodiment, the blue light of the blue light emitting diode 15 has a peak wavelength of 430 nm to 460 nm. As shown in FIG. 2, the white light obtained from the mixture of the excited light together with the blue light has the first peak wavelength G in the wavelength band of 525 to 545 nm and the second peak wavelength R in the wavelength band of 615 to 650 nm. )

As shown in FIG. 2, the lowest relative intensity RG between the first and second peak wavelengths G and R may be 0.08 or less of the relative intensity of the blue light peak B. FIG. In the present specification, the wavelength region between the first and second peak wavelengths G and R is also referred to as a “red and green mixed region” or a “color mixed region”.

As in the present embodiment, color reproducibility can be greatly improved by lowering the relative intensity RG corresponding to the mixed region of red and green to a level of 0.08 or less. Furthermore, in the display device, the LCD transmittance can be greatly improved, and as a result, the efficiency can be increased.

In general, since the mixed region of red and green overlaps each converted light by the first and second wavelength converting materials, the intensity in the region is set to 0.08 or less than the relative intensity B of blue light. It is not easy to do this, but it can be implemented by a combination of specific wavelength converting materials. In this respect, the condition of the wavelength conversion material employed in the present invention may be specified by the half width.

Preferably, the first wavelength conversion material includes at least one of β-SiAlON phosphor, (Ba, Sr) SiO 4 : Eu phosphor, SrGa 2 S 4 : Eu phosphor, and semiconductor quantum dots, and the second wavelength conversion The material may include at least one of a sulfide-based phosphor, a fluoride-based phosphor, and a semiconductor quantum dot. The half value width of the green light may be 60 nm or less, and the half value width of the red light may be 110 nm or less. The color reproducibility of the white light may be preferably 90% or more relative to the NTSC area, and more preferably 95% or more relative to the NTSC area.

Conditions for the white light emitting device according to various embodiments of the present invention, as well as operations and effects thereof, will be described with reference to the following embodiments.

< Example 1 >

First, in Example 1, a white light emitting device was manufactured using a blue light emitting diode having a peak wavelength of 455 nm, using CdSe / InP quantum dots as a green wavelength converting material and InP / ZnS quantum dots as a red wavelength converting material.

Light conversion characteristics (peak and half width) of each wavelength conversion material used in Example 1 are shown in Table 1.

< Comparative Example 1 >

In Comparative Example 1, a white light-emitting device was fabricated using a blue light emitting diode having a peak wavelength of 455 nm similar to that of Example 1, using CdSe / InP quantum dots as a green wavelength converting material and InP / ZnS quantum dots as a red wavelength converting material. Prepared.

Light conversion characteristics (peak and half width) of each wavelength conversion material used in Comparative Example 1 are shown in Table 1.

In addition to Example 1, the spectrum of white light of the white light emitting device manufactured according to Comparative Example 1 is shown in Figs. 3A and 3B, respectively.

In each spectrum, the lowest relative intensity between green and red is examined. As shown in FIG. 3A, the lowest relative intensity RG1 in the color mixing region of the white light emitting device according to Embodiment 1 is about 0.02 compared to the relative intensity of blue light.

However, in contrast, in the case of Comparative Example 1, the lowest relative intensity RG (1) in the color mixing region is relatively out of the range of the present invention by 0.19 compared to the relative intensity of blue light, as shown in FIG. 3B. High.

Next, color reproducibility and transmittance of the LCD panel were measured, and the measured results are shown in Table 1 below. Here, color reproducibility is expressed as% of NTSC area.

division Green peak (half width) Red peak (half width) Color reproducibility
Of NTSC LCD panel transmittance Example 1 540 nm (35 nm) 632 nm (40 nm) 105% 4.82% Comparative Example 1 540 nm (35 nm) 630 nm (90 nm) 82% 4.61%

As shown in Table 1, the color reproducibility of Example 1, which was low in the color mixing region, was found to be considerably high at 105%, while in Comparative Example 1, it was only 82%.

In addition, when looking at the transmission loss ratio of the LC panel, in Comparative Example 1 was only 4.61%, but in Example 1 was 4.80%, 4.82% was significantly higher, showing a 4.5% improvement compared to Comparative Example 1 respectively. It was. Through the improvement of the LCD transmittance can be expected to improve the actual light efficiency.

Next, in order to examine a specific embodiment of the present invention, more embodiments were performed according to a combination of various wavelength converting materials.

< Example 2 A and 2B>

First, in Examples 2A and 2B, the β-sialon phosphor was used in the same manner as the green wavelength converting material together with the blue light emitting diode having the peak wavelength of 443 nm. Phosphor was used.

As such, a white light emitting device using different red phosphors (sulfide-based / fluoride-based phosphors) was manufactured.

The light conversion properties (peaks) of the wavelength conversion materials used in Examples 2A and 2B are shown in Table 2, respectively.

< Example 3 A and 3B>

In Examples 3A and 3B, blue light emitting diodes having a peak wavelength of 443 nm were used similarly to Examples 2A and 2B, but BaSiO 4 phosphors were similarly used as green wavelength converting materials. In addition, in Example 3A and 3B, a white light emitting device was manufactured using different phosphors of CaS and CaF as red wavelength converting materials, respectively.

The light conversion properties (peaks) of the wavelength conversion materials used in Examples 3A and 3B are shown in Table 2, respectively.

< Example 4 A and 4B>

In Examples 4A and 4B, blue light emitting diodes having a peak wavelength of 443 nm were used similarly to Examples 2A and 2B, but the same SrGa 2 S 2 phosphor was used as the green wavelength converting material. In addition, Example 4A and 4B manufactured white light emitting devices using different phosphors of CaS and CaF as red wavelength converting materials, respectively.

The photoconversion characteristics (peaks) of the wavelength converting materials used in Examples 4A and 4B, respectively, are shown in Table 2.

< Example 5 A and 5B>

In Examples 5A and 5B, blue light emitting diodes having a peak wavelength of 443 nm were used similarly to Examples 2A and 2B, but the same CdSe core quantum dots were used as green wavelength converting materials. In Example 5A and 5B, a white light emitting device was manufactured using different phosphors of CaS and CaF as red wavelength converting materials, respectively.

The photoconversion characteristics (peaks) of the wavelength converting materials used in Examples 5A and 5B, respectively, are shown in Table 2.

< Comparative Example 2 >

In Comparative Example 2, white light emission was performed using a β-sialon phosphor as a green wavelength converting material and a CaAlSiN 3 phosphor as a red wavelength converting material, together with a blue light emitting diode having a peak wavelength of 443 nm similar to those of Examples 2A and 2B. The device was prepared.

The light conversion characteristics (peaks) of each wavelength conversion material used in Comparative Example 2 are shown in Table 2.

division Green phosphor Green peak wavelength Red phosphor Red peak wavelength
Example 2A β-SiAlON 540 nm CaS 650 nm Example 2B β-SiAlON 540 nm CaF 628 nm Example 3A BaSiO 4 525 nm CaS 650 nm Example 3B BaSiO 4 525 nm CaF 628 nm Example 4A SrGa 2 S 2 535 nm CaS 650 nm Example 4B SrGa 2 S 2 535 nm CaF 628 nm Example 5A CdSe Core 530 nm CaS 650 nm Example 5B CdSe Core 530 nm CaF 628 nm Comparative Example 2 β-SiAlON 540 nm CaAlSiN 3 628 nm

In addition to Examples 2A, 2B and 5A, 5B, the spectra for white light of the white light emitting device manufactured according to Comparative Example 2 are shown in FIGS. 4A, 4B to 8, respectively.

In each spectrum, the lowest relative intensity between green and red is examined.

As shown in Figs. 4A and 4B, the lowest relative intensities RG2A and RG2B in the color mixing region of the white light emitting device according to Embodiments 2A and 2B are about 0.08 and 0.065 in comparison with the relative intensities of blue light. As shown in Figs. 5A and 5B, the lowest relative intensities RG3A and RG3B in the color mixing region of the white light emitting device according to Embodiments 3A and 3B are about 0.08 and 0.07 compared with the relative intensities of blue light.

6A and 6B, the lowest relative intensities RG4A and RG4B in the color mixing region of the white light emitting device of Example 4A and 4B are about 0.065 and 0.05 in comparison with the relative intensities of blue light. As shown in FIGS. 7A and 7B, the lowest relative intensities RG5A and RG5B in the color mixing region of the white light emitting device according to Embodiments 5A and 5B are about 0.02 and 0.01 compared to the relative intensities of blue light. to be.

However, in contrast, in Comparative Example 2, the lowest relative intensity RG (2) in the color mixing region was relatively high to deviate from the scope of the present invention by about 0.14 compared to the relative intensity of blue light.

division RG mixing zone minimum strength Color reproducibility (to NTSC area) Example 2A 0.08 91.7% Example 2B 0.065 90.0% Example 3A 0.08 91.6% Example 3B 0.07 90.0% Example 4A 0.065 92.7% Example 4B 0.05 94.8% Example 5A 0.02 105.0% Example 5B 0.01 106.3% Comparative Example 2 0.14 74.0%

The color reproducibility of each of Examples 2A, 2B to 5A, 5B and Comparative Example 2 was measured, and the measurement results of color reproducibility are shown in Table 3 above.

In Comparative Example 2, the color reproducibility was relatively low at 74%. However, in the case of Example, the color reproducibility was higher than 90%, more than 95%, and was particularly high when the semiconductor quantum dots were mixed.

In this way, color reproducibility can be greatly improved by lowering the relative intensity RG corresponding to the mixed region of red and green to a level of 0.08 or less. Furthermore, in the display device, the LCD transmittance can be greatly improved, and as a result, the efficiency can be increased.

The present invention can be implemented in various forms of light emitting devices, unlike the form shown in FIG. This embodiment is illustrated in Figures 9A-9C. Hereinafter, various examples and applications of the white light emitting device according to the present invention will be described with reference to FIGS. 9A to 9C.

The white light emitting device 20 shown in FIG. 9A includes a blue light emitting diode chip 25 and a resin packaging part 29 which wraps the same and has a lens shape convex upward. However, the wavelength conversion part 28 has a blue light emission. It is illustrated in the form provided directly on the upper surface of the diode chip 25. The wavelength conversion unit 28 is provided in a form in which the first wavelength conversion material for green light and the second wavelength conversion material for red light are mixed.

The white light emitting device 30 shown in FIG. 9B includes a package body 31 having a reflective cup in the center, a blue light emitting diode chip 35 mounted on the bottom of the reflective cup, and a blue light emitting diode chip in the reflective cup. The transparent resin packaging part 39 which encloses 35 is included.

The resin packaging part 39 may be formed using, for example, a silicone resin, an epoxy resin, or a combination thereof. In the present exemplary embodiment, the first wavelength converting material 32 for green light and the second wavelength converting material 34 for red light may be provided in the resin packaging part 39 in a dispersed form.

In the embodiment shown in Fig. 9B, a form in which plural kinds of phosphors are mixed and dispersed in one resin packaging portion region is illustrated, but other structures can be variously modified. At least one phosphor may be provided in another layer structure to separate the same.

Similarly to the previous embodiment, the white light emitting device 40 shown in FIG. 9C includes a package main body 41 having a reflecting cup in the center, a blue light emitting diode 45 mounted at the bottom of the reflecting cup, and a reflecting cup. The inside includes a transparent resin packaging portion 49 for sealing the blue light emitting diodes 45.

On the resin packaging portion 49, resin layers containing different phosphors are provided. That is, the wavelength conversion part may be configured by the first resin layer 42 containing the first wavelength conversion material for green light and the second resin layer 44 containing the second wavelength conversion material for red light.

As such, the first and second wavelength converting materials may be applied in various ways of the white light emitting device. In the case of semiconductor quantum dots, however, the characteristics thereof are greatly reduced in contact with the atmosphere, and therefore it is preferable to employ a separate sealed structure. Fig. 10 is a schematic diagram showing a white light emitting device according to a specific embodiment (including quantum dots) of the present invention.

The white light emitting device 50 shown in FIG. 10 includes a package body 51 having first and second lead frames 52a and 52b and a blue light emitting diode 55 mounted on the first lead frame 52a. It includes.

The light emitting diodes 55 may be electrically connected to each of the first and second lead frames 52a and 52b using a wire (W). The package body 51 has a cavity surrounding a portion in which the light emitting diode 55 is mounted.

This embodiment includes a sealing structure 59 for sealing the wavelength conversion material 58. The wavelength converting material 58 may be a quantum dot as described above. In the present embodiment, two kinds of wavelength converting materials are employed, and both kinds may be disposed in the sealing structure. Alternatively, only one kind of wavelength converting material, which is a quantum dot, is sealed by the sealing structure 59, and The other may be formed on the LED chip surface or dispersed in a separate resin packaging part (see FIGS. 9A to 9C).

11A and 11B illustrate various types of backlight units that may be employed in the display device according to the present invention.

Referring to FIG. 11A, an edge type backlight unit 150 is illustrated as an example of a backlight unit to which a white light emitting device according to the present invention can be applied as a light source.

The edge type backlight unit 150 according to the present example may include a light guide plate 144 and a light emitting diode (LED) light source module 130 provided on both side surfaces of the light guide plate 144.

In this embodiment, the LED light source module 130 is provided on both opposite sides of the light guide plate 144 in the form provided, but may be provided only on one side, alternatively, the additional LED light source module 130 is provided on the other side May be

As shown in FIG. 11A, a reflecting plate 142 may be additionally provided under the light guide plate 144. The LED light source module 130 employed in the present embodiment includes a printed circuit board 131 and a plurality of LED light sources 135 mounted on an upper surface of the board 131, and the LED light source 135 is white as described above. It can be applied to the light emitting device.

Referring to FIG. 11B, a direct backlight unit 180 is illustrated as an example of another type of backlight unit.

The direct type backlight unit 180 according to the present exemplary embodiment may include a light diffusion plate 174 and an LED light source module 160 arranged on the bottom surface of the light diffusion plate 174.

The backlight unit 180 illustrated in FIG. 11B may include a bottom case 171 that may accommodate the light source module under the light diffusion plate 174.

The LED light source module 160 employed in the present embodiment includes a printed circuit board 161 and a plurality of LED light sources 165 mounted on an upper surface of the substrate 161. The plurality of LED light sources 165 may be white light emitting devices using a combination of the above-described wavelength converting materials.

12 is an exploded perspective view showing a display device according to an embodiment of the present invention.

The display apparatus 200 shown in FIG. 12 includes a backlight unit 220 and an image display panel 230 such as a liquid crystal panel. The backlight unit 220 includes a light guide plate 224 and an LED light source module 210 provided on at least one side of the light guide plate 224.

In the present exemplary embodiment, the backlight unit 220 may further include a bottom case 221 and a reflector 222 disposed under the light guide plate 224, as shown.

In addition, according to a demand for various optical properties, the light guide plate 224 and the liquid crystal panel 230 may include various types of optical sheets 226 such as a diffusion sheet, a prism sheet, or a protective sheet.

The LED light source module 210 may be mounted on at least one side of the light guide plate 224 and mounted on the printed circuit board 211 to inject light into the light guide plate 224. A plurality of LED light sources 215 is included. The plurality of LED light sources 215 may be the white light emitting device described above. The plurality of LED light sources 215 employed in the present embodiment may be side view type light emitting device packages in which side surfaces adjacent to the light emitting surface are mounted.

As such, the combination of the above-described wavelength converting material may be applied to various types of LED light source modules by applying the white light emitting device having various mounting structures. The light emitting device package or the light source module including the same may be applied to various types of display devices or lighting devices.

In addition to the embodiments described above, the wavelength conversion material may not be directly disposed in the package in which the LED is located, but may be disposed in other components of the backlight unit to convert light. This embodiment is illustrated in Figures 13A-13C.

First, as illustrated in FIG. 13A, the direct type backlight unit 250 according to the present exemplary embodiment may include a phosphor film 245 and an LED light source module 230 arranged on the lower surface of the phosphor film 245. .

The backlight unit 250 illustrated in FIG. 13A may include a bottom case 241 that may accommodate the light source module 230. In the present embodiment, the phosphor film 245 is disposed on the bottom case 241 upper surface. At least a portion of the light emitted from the light source module 230 may be wavelength converted by the phosphor film 245. The phosphor film 245 may be manufactured and applied as a separate film, but may be provided in the form of being integrally combined with the light diffusion plate.

Here, the LED light source module 230 may include a printed circuit board 231 and a plurality of LED light sources 235 mounted on the upper surface of the substrate 231.

13B and 13C illustrate various types of edge type backlight units that may be employed in the display device of the present invention.

The edge type backlight unit 280 illustrated in FIG. 13B may include a light guide plate 274 and an LED light source 265 provided on one side of the light guide plate 274. The LED light source 265 may be guided light into the light guide plate 274 by the reflective structure 261. In the present embodiment, the wavelength conversion material film 275 such as the phosphor film may be positioned between the side surface of the light guide plate 274 and the LED light source 265.

The edge type backlight unit 300 illustrated in FIG. 13C may include a light guide plate 294, an LED light source 285, and a reflective structure 281 provided on one side of the light guide plate 294. In this embodiment, the wavelength conversion material film 295 such as the phosphor film is illustrated in the form applied to the light emitting surface of the light guide plate 294.

As such, the combination of the wavelength conversion material according to the present invention may not be directly applied to the LED light source, but may be implemented in a form applied to other devices such as a backlight unit.

The lighting apparatus according to the present invention includes a diffusion unit disposed above the LED light source module and uniformly diffusing the light incident from the LED light source module, wherein the LED light source module includes a circuit board and the circuit. At least one white light emitting device mounted on a substrate and described above is provided.

The present invention is not limited to the above-described embodiments and the accompanying drawings, but is intended to be limited only by the appended claims. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

Claims (9)

A blue light emitting diode emitting blue light having a peak wavelength of 430-460 nm;
A first wavelength conversion material excited by the blue light to emit green light; And
A second wavelength conversion material excited by the blue light and emitting red light,
White light obtained from the mixture of the light excited with the blue light has at least a first peak wavelength in the wavelength band of 525-545 nm and a second peak wavelength in the wavelength band of 615-650 nm,
The lowest relative intensity between the first and second peak wavelength is less than 0.08 of the relative intensity of the blue peak.
The method of claim 1,
The first wavelength converting material includes at least one of β-SiAlON phosphor, (Ba, Sr) SiO 4 : Eu phosphor, SrGa 2 S 4 : Eu phosphor, and a semiconductor quantum dot,
The second wavelength conversion material may include at least one of a sulfide phosphor, a fluoride phosphor, and a semiconductor quantum dot.
The method of claim 1,
And a half width of the green light is 60 nm or less, and a half width of the red light is 110 nm or less.
The method of claim 1,
The white light emitting device, characterized in that the color reproducibility of the white light is more than 90% of the NTSC area.
The method of claim 1,
The white light emitting device, characterized in that the color reproducibility of the white light is more than 95% of the NTSC area.
A display device comprising the white light emitting device according to any one of claims 1 to 5.
A lighting device comprising the white light emitting device according to any one of claims 1 to 5.
LED light source module; And
It is irradiated with light of the LED light source module, and comprises an image display panel for displaying an image,
The LED light source module, the display device, characterized in that it comprises a circuit board and at least one white light emitting device according to any one of claims 1 to 5 mounted on the circuit board.
LED light source module; And
It is disposed on the LED light source module, the diffusion unit for uniformly diffusing the light incident from the LED light source module; includes;
The LED light source module, the illumination device, characterized in that it comprises a circuit board and at least one white light emitting device according to any one of claims 1 to 5 mounted on the circuit board.
KR1020120000520A 2012-01-03 2012-01-03 White light emitting device, display apparatus and illumination apparatus KR20130079804A (en)

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KR20160000535A (en) * 2014-06-24 2016-01-05 (주)이코루미 Natural light LED package and lighting device comprising the same
KR20160082381A (en) * 2014-12-26 2016-07-08 삼성전자주식회사 Method of manufacturing fluoride phosphor, light emitting device, display apparatus and illumination apparatus
KR20180047146A (en) * 2016-10-31 2018-05-10 엘지디스플레이 주식회사 Oxide phosphor, light emitting device and display device using the same
US10020428B2 (en) 2013-10-02 2018-07-10 Glbtech Co., Ltd. White light emitting device having high color rendering
US10228584B2 (en) 2014-12-29 2019-03-12 Samsung Electronics Co., Ltd. Light source, and back light unit and liquid crystal display including the light source
CN111788703A (en) * 2018-02-26 2020-10-16 京瓷株式会社 Light emitting device and lighting device
US10831056B2 (en) 2017-10-17 2020-11-10 Samsung Display Co., Ltd. Display device
JP2021193460A (en) * 2014-10-30 2021-12-23 東洋紡株式会社 Liquid crystal display device and polarizing plate

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10020428B2 (en) 2013-10-02 2018-07-10 Glbtech Co., Ltd. White light emitting device having high color rendering
KR20160000535A (en) * 2014-06-24 2016-01-05 (주)이코루미 Natural light LED package and lighting device comprising the same
JP2021193460A (en) * 2014-10-30 2021-12-23 東洋紡株式会社 Liquid crystal display device and polarizing plate
KR20160082381A (en) * 2014-12-26 2016-07-08 삼성전자주식회사 Method of manufacturing fluoride phosphor, light emitting device, display apparatus and illumination apparatus
US10228584B2 (en) 2014-12-29 2019-03-12 Samsung Electronics Co., Ltd. Light source, and back light unit and liquid crystal display including the light source
US11226447B2 (en) 2014-12-29 2022-01-18 Samsung Electronics Co., Ltd. Light source, and back light unit and liquid crystal display including the light source
KR20180047146A (en) * 2016-10-31 2018-05-10 엘지디스플레이 주식회사 Oxide phosphor, light emitting device and display device using the same
US10831056B2 (en) 2017-10-17 2020-11-10 Samsung Display Co., Ltd. Display device
CN111788703A (en) * 2018-02-26 2020-10-16 京瓷株式会社 Light emitting device and lighting device

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