KR20130064429A - Light source module and lighting system including the same - Google Patents

Light source module and lighting system including the same Download PDF

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Publication number
KR20130064429A
KR20130064429A KR1020110131031A KR20110131031A KR20130064429A KR 20130064429 A KR20130064429 A KR 20130064429A KR 1020110131031 A KR1020110131031 A KR 1020110131031A KR 20110131031 A KR20110131031 A KR 20110131031A KR 20130064429 A KR20130064429 A KR 20130064429A
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KR
South Korea
Prior art keywords
light
guide plate
light guide
light emitting
emitting device
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KR1020110131031A
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Korean (ko)
Inventor
이범연
장기연
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엘지이노텍 주식회사
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Priority to KR1020110131031A priority Critical patent/KR20130064429A/en
Publication of KR20130064429A publication Critical patent/KR20130064429A/en

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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/61—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using light guides
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V2200/00—Use of light guides, e.g. fibre optic devices, in lighting devices or systems
    • F21V2200/20—Use of light guides, e.g. fibre optic devices, in lighting devices or systems of light guides of a generally planar shape
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2101/00—Point-like light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Planar Illumination Modules (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Device Packages (AREA)

Abstract

In one embodiment, a light source module includes a substrate on which a cavity is formed; A light guide plate disposed in the cavity; At least one light emitting device disposed in the cavity and disposed between the light guide plate and one surface of the cavity, wherein a pattern is formed on the light guide plate.

Description

LIGHT SOURCE MODULE AND LIGHTING SYSTEM INCLUDING THE SAME}

Embodiments relate to a light source module and a lighting system including the same.

BACKGROUND ART Light emitting devices such as a light emitting diode (LD) or a laser diode using semiconductor materials of Group 3-5 or 2-6 group semiconductors are widely used for various colors such as red, green, blue, and ultraviolet And it is possible to realize white light rays with high efficiency by using fluorescent materials or colors, and it is possible to realize low energy consumption, semi-permanent life time, quick response speed, safety and environment friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps .

Therefore, a transmission module of the optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting element capable of replacing a fluorescent lamp or an incandescent lamp Diode lighting, automotive headlights, and traffic lights.

In a lighting device using a light emitting diode as a light source, a hot spot often occurs because the light emitted from the light emitting diode is not evenly distributed, which is a factor that degrades the quality of the lighting device. There is a need to improve.

Embodiments provide a light source module for uniformly dispersing light and an illumination system including the same.

In one embodiment, a light source module includes a substrate on which a cavity is formed; A light guide plate disposed in the cavity; At least one light emitting device disposed in the cavity and disposed between the light guide plate and one surface of the cavity, wherein a pattern is formed on the light guide plate.

The pattern may have a central area denser than the peripheral area.

The pattern may be formed in a dot or stripe shape.

The light guide plate may be disposed to cover at least a portion of an upper surface of the light emitting device.

The light guide plate may be disposed to overlap at least a portion of the light emitting device.

The wavelength conversion material may be coated on the top and / or bottom surface of the light guide plate.

The light guide plate may have a light diffuser formed in an area adjacent to the light emitting device.

The light guide plate may have any one of circular, elliptical, and polygonal cross-sectional shapes in a horizontal direction.

A support part supporting the light guide plate may be formed on sidewalls of the cavity.

The light diffusion part may be formed on at least one of an upper surface and a lower surface of the light guide plate.

The light emitting device may be disposed adjacent to a side wall of the cavity.

The light emitting device may be disposed in a central area of the bottom surface of the cavity.

The lower surface of the light guide plate may have at least one step.

The lower surface of the light guide plate may have a central area of the light guide plate thicker than a peripheral area.

The lower surface of the light guide plate may have a central area of the light guide plate thinner than a peripheral area.

The pattern may have a peripheral area denser than the central area.

According to the embodiment, by forming a pattern on the light guide plate, the light emitted from the light emitting device may be evenly dispersed to remove the hot spot phenomenon.

In addition, since light is distributed according to the shape of the light guide plate, it is possible to provide a light source module for emitting light of various designs according to the user's needs.

1 to 5 are views showing a light source module according to the first embodiment,
6 and 7 are views illustrating a light source module according to a second embodiment,
8 to 10 are views showing a light source module according to a third embodiment,
11 to 13 are views illustrating a light source module according to a fourth embodiment,
14 is a view showing an embodiment of a light emitting device disposed in a light source module according to the above embodiments;
15 and 16 illustrate an embodiment of a display apparatus.
17 is a diagram illustrating an embodiment of a lighting apparatus in which a light source module according to the above embodiments is disposed.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

In the description of the embodiment according to the present invention, when described as being formed on the "on or under" of each element, the above (on) or below (on) or under) includes two elements in which the two elements are in direct contact with each other or one or more other elements are formed indirectly between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

1 to 5 are diagrams illustrating a light source module according to a first embodiment.

The light source module according to the first embodiment includes a substrate 110 on which the cavity 112 is formed, a light guide plate 120 disposed in the cavity 112, a light guide plate 120 disposed in the cavity 112, and the light guide plate 120 and the At least one light emitting device 100 is disposed between one surface of the cavity 112, and the light guide plate 120 includes a pattern 122.

The substrate 110 may be a metal substrate or a ceramic substrate on which a circuit pattern is formed.

A cavity 112 is formed in the substrate 110, and at least one light emitting device 100 is disposed in the cavity 112. The light guide plate 120 is disposed to cover at least a portion of the upper surface of the cavity 112.

A conductive pattern (not shown) is formed on the substrate 110 in contact with the light emitting device 100, and the light emitting device 100 may be conductively bonded by the conductive pattern.

For example, the light emitting device 100 may be bonded using Au paste or Au-Sn eutectic bonding.

The cavity 112 may be formed by, for example, a computer numerical control (CNC) method, and may be formed by mechanical processing through laser drilling.

The shape of the cavity 112 may vary depending on the shape of the light guide plate 120 disposed on the upper surface.

The light guide plate 120 serves to reduce hot spots by evenly dispersing the light generated from the light emitting device 100, and may include, for example, a silicone resin.

A pattern 122 is formed on the light guide plate 120, and the light generated from the light emitting device 100 may be evenly distributed throughout the light guide plate 120 along the pattern 122.

The pattern 122 may be formed in a dot shape as shown in FIGS. 1 and 2, or may be formed in a stripe shape as shown in FIG. 3, but is not limited thereto.

As an example, the dot pattern 122 of FIGS. 1 and 2 is illustrated as having a triangular pyramid shape, and the stripe pattern 122 of FIG. 3 is illustrated as having a triangular prism shape, but the shape of the pattern is an embodiment. Various modifications are possible depending on the type.

The pattern 122 may be formed by mechanical processing or etching, such as laser drilling.

The pattern 122 may be formed periodically or aperiodically, but the portion closer to the light emitting device 100 may be farther from the light emitting device 100 because the intensity of light is stronger than that far from the light emitting device 100. The recording pattern 122 may be densely formed so that light may be evenly distributed over the light guide plate 120.

For example, referring to FIG. 1, patterns 122 are formed at loose intervals in left and right peripheral regions of the light guide plate 120 close to the light emitting device 100, and the light guide plate 120 far from the light emitting device 100. Patterns 122 are formed at dense intervals in the central area of, so that light is evenly distributed from the light emitting device 100 along the pattern 122.

1 illustrates a case where the horizontal cross-sectional shape of the light guide plate 120 is circular as an example, but as shown in FIG. 2, the horizontal cross-sectional shape of the light guide plate 120 may be polygonal.

In addition, the cross-sectional shape of the light guide plate 120 in the horizontal direction may be elliptical or have an atypical shape according to the embodiment.

As described above, since the light generated from the light emitting device 100 is evenly distributed in the shape of the light guide plate 120, when the light guide plate 120 has an irregular shape, a light source module emphasizing a design element may be implemented. have.

A wavelength conversion material (not shown) may be coated on the top and / or bottom surface of the light guide plate 120.

Light in the first wavelength region emitted from the light emitting device 100 may be excited by the wavelength conversion material and converted into light in the second wavelength region, and the second wavelength is longer than the first wavelength.

The wavelength conversion material may include a garnet-based phosphor, a silicate-based phosphor, a nitride-based phosphor, or an oxynitride-based phosphor.

For example, the garnet-base phosphor is YAG may include:: (Ce 3 + Tb 3 Al 5 O 12), wherein the silicate-based phosphor is (Sr, (Y 3 Al 5 O 12 Ce 3 +) or TAG Ba, Mg, Ca) 2 SiO 4: may include Eu 2 +, the nitride-based fluorescent material is CaAlSiN 3 containing the SiN: may include Eu 2 +, the oxynitride-based fluorescent material is SiON is Included Si 6 - x Al x O x N 8 -x : Eu 2 + (0 <x <6).

The light guide plate 120 may include a light diffuser 130 formed in an area adjacent to the light emitting device 100.

The area adjacent to the light emitting device 100 has a higher light intensity than other areas, and thus a hot spot phenomenon is likely to occur. Therefore, the light diffusion part 130 may be formed in an area on the light guide plate 120 adjacent to the light emitting device 100.

The light diffusion unit 130 removes a hot spot phenomenon by promoting the diffusion of light generated from the light emitting device 100 so that the light can be evenly distributed throughout the light guide plate 120.

The light diffusion unit 130 may be formed by coating, for example, nano-sized TiO 2 , arranging a micro lens array, or arranging a micro prism in a region adjacent to the light emitting device 100. Can be.

In FIG. 1, since the light emitting devices 100 are disposed adjacent to the left and right edges of the light guide plate 120, the light diffusion parts 130 are formed in the left and right edge regions of the light guide plate 120.

The light diffuser 130 may be formed on at least one of an upper surface and a lower surface of the light guide plate 120.

4 is a cross-sectional view of the light source module of FIGS. 1 to 3 viewed from the AA ′ direction.

Referring to FIG. 4, the light emitting device 100 may be disposed adjacent to the sidewall 112a of the cavity 112 formed in the substrate 110, but is not limited thereto.

The light guide plate 120 may be disposed to overlap at least a portion of the side surface of the light emitting device 100.

As the area where the light guide plate 120 and the light emitting device 100 overlap with each other increases, the amount of light generated by the light emitting device 100 and traveling toward the light guide plate 120 increases, so that light is evenly distributed through the light guide plate 120. Can be.

Referring to FIG. 4, as described above, as the distance from the light emitting device 100 increases, the pattern 122 formed on the light guide plate 120 becomes denser.

In FIG. 4, as an example, the cross section of the pattern 122 has a triangular shape, but the cross-sectional shape of the pattern 122 may be variously modified according to an exemplary embodiment, without being limited thereto.

5A is a cross-sectional view of the light source module of FIGS. 1 and 2 viewed from the direction BB ′, and FIG. 5B is a cross-sectional view of the light source module of FIG. 3 viewed from the direction BB ′.

5A and 5B, a support part 114 is formed on the sidewall 112a of the cavity 112 formed in the substrate 110, and the support part 114 may support the edge region of the light guide plate 120. have.

The support part 114 may be formed by giving a step to the side wall 112a of the cavity 112, for example.

According to an embodiment, the support part 114 may be formed in a continuous ring shape over the entire inner circumferential surface of the side wall 112a of the cavity 112, and may be predetermined over the inner circumferential surface of the side wall 112a of the cavity 112. It may be formed in a ring shape segmented at intervals.

6 and 7 illustrate a light source module according to a second embodiment. Detailed descriptions of the same contents as those of the first embodiment will be omitted, and the following description will focus on differences.

The light source module according to the second embodiment may include a substrate 110 having a cavity 112, at least one light emitting device 100 disposed in the cavity 112, and at least a portion of an upper surface of the cavity 112. The light guide plate 120 is covered, and a pattern 122 is formed on the light guide plate 120.

In this case, the light guide plate 120 is disposed to cover at least a portion of the upper surface of the light emitting device 100.

The pattern 122 may be formed in a dot shape as shown in FIG. 6, but this is only an example and is not limited thereto.

The pattern 122 may be formed periodically or aperiodically, but the portion closer to the light emitting device 100 may be farther from the light emitting device 100 because the intensity of light is stronger than that far from the light emitting device 100. The recording pattern 122 may be densely formed so that light is evenly distributed over the light guide plate 120.

For example, referring to FIG. 6, patterns 122 are formed at loose intervals in the left and right peripheral regions of the light guide plate 120 close to the light emitting device 100, and the light guide plate 120 far from the light emitting device 100. Patterns 122 are formed at dense intervals in the central area of, so that light is evenly distributed from the light emitting device 100 along the pattern 122.

FIG. 7 is a cross-sectional view of the light source module of FIG. 6 viewed from the AA ′ direction.

The light emitting device 100 may be disposed adjacent to the sidewall 112a of the cavity 112 formed in the substrate 110, but is not limited thereto.

Referring to FIG. 7, the light guide plate 120 may be disposed to overlap at least a portion of the light emitting device 100.

That is, the lower surface of the light guide plate 120 may have at least one step so that the center area of the light guide plate 120 is thicker than the peripheral area, and may be disposed to overlap at least a part of the side surface of the light emitting device 100.

However, this is merely an example, and the light guide plate 120 may be disposed to cover at least a portion of the upper surface of the light emitting device 100 without overlapping the side surface of the light emitting device 100.

As shown in FIG. 7, when the light guide plate 120 is disposed to cover at least a portion of a side surface of the light emitting device 100 and at least a part of an upper surface of the light emitting device 100, the light guide plate 120 and the light emitting device ( Since the overlapping area of 100 is increased, light generated from the light emitting device 100 may be more uniformly distributed along the light guide plate 120 than in the first embodiment.

In the second embodiment, since the light guide plate 120 is disposed to cover at least a portion of the upper surface of the light emitting device 100, the depth d of the side wall 112a of the cavity 112 formed in the substrate 110 in the first embodiment. In a second embodiment, the depth d 2 of the sidewall 112a of the cavity 112 formed in the substrate 110 may be greater than one.

A wavelength conversion material (not shown) may be coated on the top and / or bottom surface of the light guide plate 120.

Light in the first wavelength region emitted from the light emitting device 100 may be excited by the wavelength conversion material and converted into light in the second wavelength region, and the second wavelength is longer than the first wavelength.

The light guide plate 120 may include a light diffuser 130 formed in an area adjacent to the light emitting device 100.

The light diffusion unit 130 promotes the diffusion of light generated from the light emitting device 100 to remove hot spots so that the light can be evenly distributed throughout the light guide plate 120.

In FIG. 6, since the light emitting devices 100 are disposed adjacent to the left and right edges of the light guide plate 120, the light diffusion parts 130 are formed in the left and right edge regions of the light guide plate 120.

The light diffuser 130 may be formed on at least one of an upper surface and a lower surface of the light guide plate 120.

The cross-sectional view of the light source module according to the second embodiment from the direction BB ′ is as shown in FIG. 5A or 5B, and thus description thereof will be omitted.

8 to 10 are diagrams illustrating a light source module according to a third embodiment. Detailed descriptions of the same contents as those of the first and second exemplary embodiments will be omitted, and the following description will focus on differences.

The light source module according to the third exemplary embodiment may include a substrate 110 having a cavity 112, at least one light emitting device 100 disposed in the cavity 112, and at least a portion of an upper surface of the cavity 112. The light guide plate 120 is covered, and a pattern 122 is formed on the light guide plate 120.

In this case, the light guide plate 120 is disposed to cover all of the upper surface of the light emitting device 100.

The pattern 122 may be formed in a dot shape as shown in FIG. 8, but this is only an example and is not limited thereto.

The pattern 122 may be formed periodically or aperiodically, but the portion closer to the light emitting device 100 may be farther from the light emitting device 100 because the intensity of light is stronger than that far from the light emitting device 100. The recording pattern 122 may be densely formed so that light is evenly distributed over the light guide plate 120.

For example, referring to FIG. 8, patterns 122 are formed in the left and right edge regions of the light guide plate 120 close to the light emitting device 100 at loose intervals, and the light guide plate 120 far from the light emitting device 100. Patterns 122 are formed at dense intervals in the central area of, so that light is evenly distributed from the light emitting device 100 along the pattern 122.

9 and 10 are cross-sectional views of the light source module of FIG. 8 viewed from the AA ′ direction.

The light emitting device 100 may be disposed adjacent to the sidewall 112a of the cavity 112 formed in the substrate 110, but is not limited thereto.

As illustrated in FIG. 9, the light guide plate 120 may be disposed so as not to overlap with a side surface of the light emitting device 100, and as illustrated in FIG. 10, so as to overlap at least a part of the side surface of the light emitting device 100. May be

That is, the lower surface of the light guide plate 120 may have at least one step so that the center area of the light guide plate 120 is thicker than the peripheral area, and may be disposed to overlap at least a part of the side surface of the light emitting device 100.

As shown in FIG. 10, when the light guide plate 120 is disposed to overlap at least a part of the side surface of the light emitting device 100, an area in which the light guide plate 120 and the light emitting device 100 overlap each other is increased. In comparison, light generated from the light emitting device 100 may be more uniformly distributed along the light guide plate 120.

In the third embodiment, since the light guide plate 120 is disposed to cover the entire upper surface of the light emitting device 100, the depth d 1 of the side wall 112a of the cavity 112 formed in the substrate 110 in the first embodiment. In a third embodiment, the depth d 3 of the sidewall 112a of the cavity 112 formed in the substrate 110 may be deeper.

The depth d 2 of the side wall 112a of the cavity 112 in the second embodiment may be the same as the depth d 3 of the side wall 112b of the cavity 112 in the third embodiment.

A wavelength conversion material (not shown) may be coated on the top and / or bottom surface of the light guide plate 120.

Light in the first wavelength region emitted from the light emitting device 100 may be excited by the wavelength conversion material and converted into light in the second wavelength region, and the second wavelength is longer than the first wavelength.

The light guide plate 120 may include a light diffuser 130 formed in an area adjacent to the light emitting device 100.

The light diffusion unit 130 promotes the diffusion of light generated from the light emitting device 100 to remove hot spots so that the light can be evenly distributed throughout the light guide plate 120.

In FIG. 8, since the light emitting devices 100 are disposed at the left and right edges of the light guide plate 120, the light diffusion parts 130 are formed at the left and right edge areas of the light guide plate 120.

The light diffuser 130 may be formed on at least one of an upper surface and a lower surface of the light guide plate 120.

In the third exemplary embodiment, since the light guide plate 120 is disposed to cover all of the top surface of the light emitting device 100, the area of the diffusion part 130 formed on the light guide plate 120 may be larger than in the first and second embodiments. .

The cross-sectional view of the light source module according to the third embodiment from the direction BB ′ is as shown in FIG. 5A or 5B, and thus description thereof will be omitted.

11 to 13 illustrate a light source module according to a fourth embodiment. Detailed descriptions of the same contents as those in the first, second, and third embodiments will be omitted, and the following description will focus on differences.

The light source module according to the fourth embodiment may include a substrate 110 having a cavity 112, at least one light emitting device 100 disposed in the cavity 112, and at least a portion of an upper surface of the cavity 112. The light guide plate 120 is covered, and a pattern 122 is formed on the light guide plate 120.

In this case, the light guide plate 120 is disposed to cover all of the top surface of the light emitting device 100, and the light emitting device 100 is disposed in a central area of the bottom surface 112b of the cavity 112.

The pattern 122 may be formed in a dot shape as shown in FIG. 11, but this is only an example and is not limited thereto.

The pattern 122 may be formed periodically or aperiodically, but the portion closer to the light emitting device 100 may be farther from the light emitting device 100 because the intensity of light is stronger than that far from the light emitting device 100. The recording pattern 122 may be densely formed so that light is evenly distributed over the light guide plate 120.

For example, referring to FIG. 11, patterns 122 are formed at loose intervals in the center area of the light guide plate 120 close to the light emitting device 100, and the peripheral area of the light guide plate 120 far from the light emitting device 100. The pattern 122 is formed at dense intervals so that light may be evenly distributed from the light emitting device 100 along the pattern 122.

12 and 13 illustrate cross-sectional views of the light source module of FIG. 11 as viewed from the AA ′ direction.

The light emitting device 100 may be disposed in a central area of the bottom surface 112a of the cavity 112 formed in the substrate 110, but is not limited thereto.

As shown in FIG. 12, the light guide plate 120 may be disposed so as not to overlap with a side surface of the light emitting device 100, and as illustrated in FIG. 13, so as to overlap at least a part of the side surface of the light emitting device 100. May be

That is, the lower surface of the light guide plate 120 may have at least one step so that the center area of the light guide plate 120 is thinner than the peripheral area and overlap the at least part of the side surface of the light emitting device 100.

As shown in FIG. 13, when the light guide plate 120 is disposed to overlap at least a portion of the side surface of the light emitting device 100, an area in which the light guide plate 120 and the light emitting device 100 overlap each other is increased. In comparison, light generated from the light emitting device 100 may be more uniformly distributed along the light guide plate 120.

In the fourth embodiment, since the light guide plate 120 is disposed to cover the entire upper surface of the light emitting device 100, the depth d 1 of the side wall 112a of the cavity 112 formed in the substrate 110 in the first embodiment. In a fourth embodiment, the depth d 4 of the sidewall 112a of the cavity 112 formed in the substrate 110 may be deeper.

The depth d 4 of the side wall 112a of the cavity 112 in the fourth embodiment and the depth d 2 , d 3 of the side wall 112b of the cavity 112 in the second and third embodiments may be the same.

A wavelength conversion material (not shown) may be coated on the top and / or bottom surface of the light guide plate 120.

Light in the first wavelength region emitted from the light emitting device 100 may be excited by the wavelength conversion material and converted into light in the second wavelength region, and the second wavelength is longer than the first wavelength.

The light guide plate 120 may include a light diffuser 130 formed in an area adjacent to the light emitting device 100.

The light diffusion unit 130 promotes the diffusion of light generated from the light emitting device 100 to remove hot spots so that the light can be evenly distributed throughout the light guide plate 120.

In the fourth exemplary embodiment, the light guide plate 120 is disposed to cover all of the top surface of the light emitting device 100, and the light emitting device 100 is disposed in the center area of the bottom surface 112b of the cavity 112. The light diffusion part 130 may be formed in the central area of the substrate.

The light diffuser 130 may be formed on at least one of an upper surface and a lower surface of the light guide plate 120.

The cross-sectional view of the light source module according to the third embodiment from the direction BB ′ is as shown in FIG. 5A or 5B, and thus description thereof will be omitted.

In the above-described embodiments, one light emitting device 100 is disposed adjacent to the side wall 112a of the cavity 112 formed in the substrate 110 or in the center region of the bottom surface 112b of the cavity 112. Although shown as being arranged, this is merely an example. The number or arrangement area of the light emitting devices 100 may be variously modified according to the exemplary embodiment, and the present invention is not limited thereto.

14 is a view illustrating an embodiment of a light emitting device disposed in a light source module according to the above embodiments.

The light emitting device includes a light emitting diode (LED) using a plurality of compound semiconductor layers, for example, a semiconductor layer of Group 3-Group 5 elements, and the LED is a colored LED or UV that emits light such as blue, green, or red. It may be an LED. The emitted light of the LED may be implemented using various semiconductors, but is not limited thereto.

A horizontal light emitting device according to an embodiment as shown in FIG. 14 has a first conductive semiconductor layer 222, an active layer 224, and a second conductive semiconductor layer having an opening surface on a growth substrate 210. A light emitting structure 220 is provided that includes 226.

The light emitting structure 220 may be formed of, for example, Metal Organic Chemical Vapor Deposition (MOCVD), Chemical Vapor Deposition (CVD), Plasma-Enhanced Chemical Vapor Deposition (PECVD), or molecular beam growth. It may be formed using a method such as Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), but is not limited thereto.

The growth substrate 210 may be formed of a material suitable for growing a semiconductor material, or a carrier wafer. In addition, it may be formed of a material having excellent thermal conductivity, and may be a conductive substrate or an insulating substrate. The growth substrate 210 may use, for example, at least one of sapphire (Al 2 O 3 ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga 2 0 3 . An uneven structure may be formed on the growth substrate 210, but is not limited thereto. Impurities on the surface may be removed by wet cleaning the growth substrate 210.

A buffer layer (not shown) may be grown between the light emitting structure 220 and the growth substrate 210 to mitigate the difference in lattice mismatch and thermal expansion coefficient of the material. The material of the buffer layer may be formed of at least one of Group III-V compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. An undoped semiconductor layer may be formed on the buffer layer, but the present invention is not limited thereto.

The first conductivity-type semiconductor layer 222 may be formed of a semiconductor compound, and for example, may be formed of a compound semiconductor, such as Group 3-5 or Group 2-6. In addition, the first conductivity type dopant may be doped. When the first conductivity type semiconductor layer 222 is an n type semiconductor layer, the first conductivity type dopant may include Si, Ge, Sn, Se, Te as an n type dopant, but is not limited thereto. Alternatively, when the first conductive semiconductor layer 222 is a p-type semiconductor layer, the second conductive dopant may be a p-type dopant, and may include Mg, Zn, Ca, Sr, Ba, and the like, but is not limited thereto. .

The first conductive semiconductor layer 222 may be formed of only the first conductive semiconductor layer, or may further include an undoped semiconductor layer under the first conductive semiconductor layer, but is not limited thereto.

The non-conductive semiconductor layer is formed to improve the crystallinity of the first conductive type semiconductor layer, and the non-conductive semiconductor layer has a lower electrical conductivity than the first conductive type semiconductor layer without doping the n-type dopant. And may be the same as the first conductive type semiconductor layer.

The active layer 224 may be formed on the first conductive semiconductor layer 222.

In the active layer 224, electrons injected through the first conductive semiconductor layer 222 and holes injected through the second conductive semiconductor layer 226 formed thereafter meet each other to form an energy band unique to the active layer (light emitting layer) material. It is a layer that emits light with energy determined by it.

The active layer 224 may be formed of at least one of a single well structure, a multiple well structure, a quantum-wire structure, and a quantum dot structure. For example, the active layer 224 may be injected with trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and trimethyl indium gas (TMIn) to form a multi-quantum well structure. It is not limited to this.

The well layer / barrier layer of the active layer 224 may be formed of any one or more pair structures of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) / AlGaP. However, the present invention is not limited thereto. The well layer may be formed of a material having a lower band gap than the band gap of the barrier layer.

A conductive cladding layer (not shown) may be formed on or under the active layer 224. The conductive clad layer may be formed of a semiconductor having a band gap wider than the band gap of the barrier layer of the active layer. For example, the conductive clad layer may comprise GaN, AlGaN, InAlGaN or a superlattice structure. In addition, the conductive clad layer may be doped with n-type or p-type.

In addition, a second conductivity type semiconductor layer 226 may be formed on the active layer 224.

The second conductivity type semiconductor layer 226 may be formed of a semiconductor compound, for example, a group III-V compound semiconductor doped with a second conductivity type dopant. A second conductive semiconductor layer 226, for example, having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It may include a semiconductor material. When the second conductive semiconductor layer 226 is a p-type semiconductor layer, the second conductive dopant may be a p-type dopant and may include Mg, Zn, Ca, Sr, and Ba. In addition, when the second conductivity type semiconductor layer 226 is an n type semiconductor layer, the first conductivity type dopant may include Si, Ge, Sn, Se, Te as an n type dopant, but is not limited thereto.

Here, unlike the above, the first conductive semiconductor layer 222 may include a p-type semiconductor layer, and the second conductive semiconductor layer 226 may include an n-type semiconductor layer. In addition, a third conductive semiconductor layer (not shown) including an n-type or p-type semiconductor layer may be formed on the first conductive semiconductor layer 222. Accordingly, the light emitting diode according to the present embodiment It may include at least one of np, pn, npn, pnp junction structure.

In addition, the doping concentrations of the conductive dopants in the first conductive semiconductor layer 222 and the second conductive semiconductor layer 226 may be uniformly or non-uniformly formed. That is, the structure of the plurality of semiconductor layers may be formed in various ways, but is not limited thereto.

In addition, a first electrode 230 is formed on an opening surface formed by mesa etching a portion of the first conductive semiconductor layer 222, and a second electrode 240 is formed on the second conductive semiconductor layer 226. ) Is formed. The first electrode 230 and the second electrode 240 each include at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au). It can be formed into a single layer or a multi-layer structure.

14 illustrates a horizontal light emitting device as an example, but a vertical light emitting device or a flip chip type light emitting device may be disposed.

Hereinafter, a display apparatus and a lighting apparatus will be described as an example of a lighting system in which a light source module according to the above embodiments is disposed.

15 and 16 illustrate an embodiment of a display device.

Referring to FIG. 15, the display apparatus 1 includes a display module 20, a front cover 30 surrounding the display module 20, a back cover 35, and a driver 55 provided in the back cover 35. And a driving unit cover 40 surrounding the driving unit 55.

The front cover 30 may include a front panel (not shown) of a transparent material that transmits light, and the front panel protects the display module 20 at regular intervals, and the light emitted from the display module 20. The light is transmitted through the display module 20 so that the image displayed on the display module 20 can be seen from the outside.

The back cover 35 may be combined with the front cover 30 to protect the display module 20.

The driving unit 55 may be disposed on one surface of the back cover 35.

The driving unit 55 may include a driving control unit 55a, a main board 55b, and a power supply unit 55c.

The driving controller 55a may be a timing controller. The driving controller 55a may be a driving unit for adjusting operation timing of each driver IC of the display module 20. The main board 55b may include V sink, H sink, R, G, The driving unit transmits a B resolution signal, and the power supply unit 55c is a driving unit that applies power to the display module 20.

The driving unit 55 may be provided in the back cover 35 and may be wrapped by the driving unit cover 40.

A plurality of holes may be provided in the back cover 35 to connect the display module 20 and the driving unit 55, and a stand 60 supporting the display apparatus 1 may be provided.

On the other hand, as shown in Figure 16, the drive control unit 55a of the drive unit 55 is provided in the back cover 35, the main board 55b and the power board 55c may be provided in the stand 60. have.

In addition, the driving unit cover 40 may wrap only the driving unit 55 provided in the back cover 35.

Although the main board 55b and the power board 55c are separately formed in the present embodiment, they may be formed as one integrated board, but are not limited thereto.

17 is a diagram illustrating an embodiment of a lighting apparatus in which a light source module according to the above embodiments is disposed.

Referring to FIG. 17, a lighting apparatus according to an embodiment includes a light source 600 for projecting light, a housing 400 in which the light source 600 is embedded, and a heat dissipation part 500 for dissipating heat from the light source 600. And a holder 700 for coupling the light source 600 and the heat dissipation part 500 to the housing 400.

The housing 400 includes a socket coupling part 410 coupled to an electric socket and a body part 420 connected to the socket coupling part 410 and having a light source 600 embedded therein. One air flow port 430 may be formed in the body portion 420.

A plurality of air flow openings 430 are provided on the body portion 420 of the housing 400. The air flow openings 430 may be formed of one air flow openings or a plurality of flow openings may be radially arranged Various other arrangements are also possible.

The light source 600 may be a light source module according to the above embodiments.

A holder 700 is provided below the light source 600, and the holder 700 may include a frame and another air flow port. In addition, although not shown, an optical member may be provided under the light source 600 to diffuse, scatter, or converge the light projected from the light source 600.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, This is possible.

Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined not only by the claims below but also by the equivalents of the claims.

100: light emitting portion 110: substrate
112: cavity 120: light guide plate
122: pattern 130: light diffusing portion
210: a substrate, 220: a light emitting structure,
222: first conductive semiconductor layer, 224: active layer
226: second conductive semiconductor layer 230: first electrode
400: housing
500: radiator 600: light source
700: Holder

Claims (17)

A substrate on which a cavity is formed;
A light guide plate disposed in the cavity;
At least one light emitting element disposed in the cavity and disposed between the light guide plate and one surface of the cavity;
A light source module having a pattern formed on the light guide plate. The method of claim 1,
The pattern is a light source module, the central region is formed denser than the peripheral region. The method of claim 1,
The pattern is a light source module formed in a dot or stripe. The method of claim 1,
The light guide plate is disposed to cover at least a portion of the upper surface of the light emitting device. The method of claim 1,
The light guide plate is disposed so as to overlap at least a portion of the light emitting element. The method of claim 1,
A light source module coated with a wavelength conversion material on the upper surface and / or lower surface of the light guide plate. The method of claim 1,
The light guide plate is a light source module formed with a light diffusion portion adjacent to the light emitting element. The method of claim 1,
The light guide plate has a horizontal cross-sectional shape of a light source module including any one of circular, elliptical, or polygonal. The method of claim 1,
The light source module has a support portion for supporting the light guide plate on the side wall of the cavity. The method of claim 7, wherein
The light diffusion module is formed on at least one of the upper surface or the lower surface of the light guide plate. The method of claim 1,
The light emitting device is a light source module disposed adjacent to the side wall of the cavity. The method of claim 1,
The light emitting device is a light source module disposed in the center area of the bottom surface of the cavity. The method of claim 1,
And a lower surface of the light guide plate having at least one step. The method of claim 1,
The lower surface of the light guide plate is a light source module thicker than the peripheral area of the central region of the light guide plate. The method of claim 1,
The lower surface of the light guide plate is a light source module of which the central area of the light guide plate is thinner than the peripheral area. The method of claim 1,
The pattern is a light source module wherein the peripheral area is formed denser than the center area. 17. An illumination system comprising the light source module of any of claims 1-16.
KR1020110131031A 2011-12-08 2011-12-08 Light source module and lighting system including the same KR20130064429A (en)

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Application Number Priority Date Filing Date Title
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200107601A (en) * 2019-03-08 2020-09-16 항조우 유종 가오홍 라이팅 일렉트리컬 이퀴프먼트 컴퍼니 리미티드 Slim type led flood light

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200107601A (en) * 2019-03-08 2020-09-16 항조우 유종 가오홍 라이팅 일렉트리컬 이퀴프먼트 컴퍼니 리미티드 Slim type led flood light

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