KR20130063412A - Phosphor and method of fabricating phosphor - Google Patents
Phosphor and method of fabricating phosphor Download PDFInfo
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- KR20130063412A KR20130063412A KR1020110129915A KR20110129915A KR20130063412A KR 20130063412 A KR20130063412 A KR 20130063412A KR 1020110129915 A KR1020110129915 A KR 1020110129915A KR 20110129915 A KR20110129915 A KR 20110129915A KR 20130063412 A KR20130063412 A KR 20130063412A
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- phosphor
- containing compound
- aluminum silicate
- aluminum
- europium
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 claims abstract description 32
- 230000008859 change Effects 0.000 claims abstract description 10
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 8
- 229910052792 caesium Inorganic materials 0.000 claims abstract description 6
- 230000005284 excitation Effects 0.000 claims abstract description 6
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 6
- -1 oxygen ions Chemical class 0.000 claims abstract description 6
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 6
- 229910052701 rubidium Inorganic materials 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims abstract description 6
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 4
- 239000001301 oxygen Substances 0.000 claims abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 4
- 150000001875 compounds Chemical class 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 16
- 239000011734 sodium Substances 0.000 claims description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 229910052693 Europium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 7
- 239000011572 manganese Substances 0.000 claims description 7
- 239000012298 atmosphere Substances 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052783 alkali metal Inorganic materials 0.000 claims description 4
- 150000001340 alkali metals Chemical class 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- OUUQCZGPVNCOIJ-UHFFFAOYSA-M Superoxide Chemical class [O-][O] OUUQCZGPVNCOIJ-UHFFFAOYSA-M 0.000 claims description 2
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 claims description 2
- 150000001805 chlorine compounds Chemical class 0.000 claims description 2
- 239000011363 dried mixture Substances 0.000 claims description 2
- 150000004679 hydroxides Chemical class 0.000 claims description 2
- 150000002823 nitrates Chemical class 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 2
- 239000011575 calcium Substances 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims 1
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 229910052692 Dysprosium Inorganic materials 0.000 claims 1
- 229910052691 Erbium Inorganic materials 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052765 Lutetium Inorganic materials 0.000 claims 1
- 229910052779 Neodymium Inorganic materials 0.000 claims 1
- 229910052772 Samarium Inorganic materials 0.000 claims 1
- 229910052771 Terbium Inorganic materials 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- 239000000654 additive Substances 0.000 claims 1
- 230000000996 additive effect Effects 0.000 claims 1
- 229910052791 calcium Inorganic materials 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims 1
- 229910052761 rare earth metal Inorganic materials 0.000 claims 1
- 150000002910 rare earth metals Chemical class 0.000 claims 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims 1
- 229910052723 transition metal Inorganic materials 0.000 claims 1
- 150000003624 transition metals Chemical class 0.000 claims 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims 1
- 238000001228 spectrum Methods 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract 1
- 238000000295 emission spectrum Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 6
- 238000009877 rendering Methods 0.000 description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 239000012190 activator Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 3
- JLDSOYXADOWAKB-UHFFFAOYSA-N aluminium nitrate Chemical compound [Al+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O JLDSOYXADOWAKB-UHFFFAOYSA-N 0.000 description 3
- NNMXSTWQJRPBJZ-UHFFFAOYSA-K europium(iii) chloride Chemical compound Cl[Eu](Cl)Cl NNMXSTWQJRPBJZ-UHFFFAOYSA-K 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000000103 photoluminescence spectrum Methods 0.000 description 3
- 235000010344 sodium nitrate Nutrition 0.000 description 3
- 239000004317 sodium nitrate Substances 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 2
- 239000013543 active substance Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- IIPYXGDZVMZOAP-UHFFFAOYSA-N lithium nitrate Chemical compound [Li+].[O-][N+]([O-])=O IIPYXGDZVMZOAP-UHFFFAOYSA-N 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- NGDQQLAVJWUYSF-UHFFFAOYSA-N 4-methyl-2-phenyl-1,3-thiazole-5-sulfonyl chloride Chemical compound S1C(S(Cl)(=O)=O)=C(C)N=C1C1=CC=CC=C1 NGDQQLAVJWUYSF-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910013553 LiNO Inorganic materials 0.000 description 1
- 229910021380 Manganese Chloride Inorganic materials 0.000 description 1
- GLFNIEUTAYBVOC-UHFFFAOYSA-L Manganese chloride Chemical compound Cl[Mn]Cl GLFNIEUTAYBVOC-UHFFFAOYSA-L 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 229910052789 astatine Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- GEIGXJHXQWKQAT-UHFFFAOYSA-N europium;nitric acid Chemical compound [Eu].O[N+]([O-])=O GEIGXJHXQWKQAT-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- FYDKNKUEBJQCCN-UHFFFAOYSA-N lanthanum(3+);trinitrate Chemical compound [La+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O FYDKNKUEBJQCCN-UHFFFAOYSA-N 0.000 description 1
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 1
- 235000002867 manganese chloride Nutrition 0.000 description 1
- 239000011565 manganese chloride Substances 0.000 description 1
- 229940099607 manganese chloride Drugs 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77344—Aluminosilicates
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/55—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing beryllium, magnesium, alkali metals or alkaline earth metals
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7729—Chalcogenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
Description
실시 예는 형광체 및 형광체 제조방법에 관한 것이다.The embodiment relates to a phosphor and a method for producing the phosphor.
백색 발광 다이오드(white LED)는 기존의 일반 조명 중 가장 대표적이라 할 수 있는 형광등을 대체 할 수 있는 차세대 발광 소자 후보의 하나이다. 발광 다이오드는 기존의 광원보다 소비전력이 적으며, 형광등과 달리 수은을 포함하지 않아 친환경적이라 할 수 있다. 또한 기존의 광원과 비교하여 수명이 길며 응답속도가 빠르다는 장점을 갖는다. 백색 발광 다이오드를 제조하는 방법에는 크게 세 가지가 있다. 적색, 녹색, 청색 LED 칩을 조합하여 백색광을 구현하는 방법, 청색 LED 칩에 황색 형광체를 도포하여 백색광을 구현하는 방법, UV LED 칩에 적색, 녹색, 청색 LED 칩을 조합하여 백색광을 구현하는 방법이 그것이다.White light emitting diodes (white LEDs) are one of the next-generation light emitting device candidates that can replace fluorescent light, which is one of the most typical conventional lighting. Light emitting diodes consume less power than conventional light sources, and unlike fluorescent lamps, they do not contain mercury and are thus environmentally friendly. In addition, it has the advantage of longer life and faster response speed than the conventional light source. There are three methods for manufacturing a white light emitting diode. A method of realizing white light by combining red, green and blue LED chips, A method of realizing white light by applying a yellow phosphor to a blue LED chip, and a method of realizing white light by combining red, green and blue LED chips on a UV LED chip. This is it.
적색, 녹색, 청색 LED 칩을 조합하여 백색광을 구현하기 위해서는 InGaN,GaN, GaAs, ZnO 등의 서로 다른 막을 만들어야 하는데 이러한 제조 방법은 서로 다른 발광 다이오드를 제조해야 하므로 제조공정에 설비비가 많이 들고 생산비가 높아지는 단점이 있다. 또한 적색, 녹색, 청색 LED 칩을 조합하는 경우 각각의 LED 칩의 구동 전압이 달라 각각의 회로를 구성하는데 따른 제조 공정의 복잡성, 복잡한 구조로 인한 디자인의 제약 및 비용 상승이라는 문제점이 발생한다.In order to realize white light by combining red, green, and blue LED chips, different films such as InGaN, GaN, GaAs, and ZnO must be made. Such a manufacturing method requires manufacturing different light emitting diodes, . In addition, when the red, green, and blue LED chips are combined, the driving voltage of each LED chip is different. Therefore, there arises a problem of complexity of the manufacturing process and restriction of design due to the complicated structure of the respective circuits.
청색 LED 칩에 황색 형광체를 도포하여 백색광을 구현하는 방법은 현재 가장 널리 사용되며 발광 다이오드를 이용하여 백색광을 구현하는 가장 대표적인 방법이다. 현재 가장 널리 사용되고 있는 백색 발광 다이오드는 청색 LED 칩에 황색 형광체인 YAG:Ce 형광체를 도포하여 제조되고 있다. 청색 LED 칩과 황색 형광체를 결합하여 백색광을 구현하는 방법의 경우 발광 다이오드의 여기원이 450 nm의 파장으로 450nm 여기 파장을 갖는 형광체를 찾는데 그 어려움이 있어 청색 LED 칩과 형광체를 결합하는데 있어 그 제약이 따른다. 청색 LED 칩으로 여기되는 형광체로서 황색 형광체를 사용하는 경우 적색 영역의 약한 발광으로 인해 연색 지수 (Color Rendering Index,CRI)가 낮아지는 단점이 있다. 또한 상기 방법의 경우 청색 광원이 구동 전압에 따라 변하게 되므로 색좌표가 불안정한 단점을 갖게 된다.The method of applying a yellow phosphor to a blue LED chip to realize white light is currently the most widely used and is the most representative method of realizing white light by using a light emitting diode. Currently, the most widely used white light emitting diodes are manufactured by applying YAG: Ce phosphor, which is a yellow phosphor, to a blue LED chip. In the case of a method of implementing white light by combining a blue LED chip and a yellow phosphor, it is difficult to find a phosphor having a 450 nm excitation wavelength at a wavelength of 450 nm because of the difficulty in combining the blue LED chip with a phosphor. This follows. When a yellow phosphor is used as a phosphor excited by a blue LED chip, color rendering index (CRI) is lowered due to weak light emission in a red region. In addition, since the blue light source changes according to the driving voltage in the above method, the color coordinate becomes unstable.
자외선 LED칩에 적색, 녹색, 청색 형광체를 조합하거나, 넓은 반치폭 (Full Width Half Maximum, FWHM)의 발광 스펙트럼을 가지는 형광체를 이용하여 백색광을 구현하는 방법의 경우 상기의 문제점들을 해결할 수 있다. 장파장 자외선 발광 다이오드에 적색, 녹색, 청색 형광체를 도포하는 경우나, 넓은 반치폭을 가지는 황색의 형광체의 경우. 높은 연색지수를 갖는 태양광에 가까운 백색광을 만들어낼 수 있다. 따라서 이러한 자외선 및 청색 발광 다이오드에 의해 여기 되는 고연색 및 고효율의 형광체 개발이 절실히 요구되는 실정이다.The above problems can be solved in the case of a method of implementing white light by combining red, green, and blue phosphors in an ultraviolet LED chip or using a phosphor having an emission spectrum of a full width half maximum (FWHM). In the case of applying red, green, and blue phosphors to a long wavelength ultraviolet light emitting diode, or in the case of a yellow phosphor having a wide half width. White light close to sunlight having a high color rendering index can be produced. Therefore, there is an urgent need to develop phosphors having high color rendering and high efficiency which are excited by such ultraviolet and blue light emitting diodes.
실시 예는 자외선 및 청색 발광 다이오드에 여기되는 기존의 형광체에서 나타나는 낮은 연색성 및 밝기 등의 문제점을 해결하기 위한 것으로, 자외선 및 청색 발광 다이오드에 의해 여기 되며, 400 ~ 800 nm 영역의 발광 파장 스펙트럼을 보이는 알루미늄 실리케이트계 형광체와 이를 이용한 백색 발광 소자의 제조방법을 제공할 수 있다.The embodiment is intended to solve problems such as low color rendering and brightness of conventional phosphors excited by ultraviolet light and blue light emitting diodes, and is excited by ultraviolet light and blue light emitting diodes, and exhibits an emission wavelength spectrum of 400 to 800 nm. An aluminum silicate-based phosphor and a method of manufacturing a white light emitting device using the same can be provided.
실시 예에서는 자외선 및 청색 발광 다이오드 등에 의해 250nm ~ 500nm의 파장 영역에서 여기 되며, 400nm ~ 800nm 영역의 발광 파장 스펙트럼을 나타내는 알루미늄 실리케이트계 형광체[(M1 - xNx)4(Si1 - yAly)8O16 ±δ:Eu2 + z] 및 그 제조방법을 제시하였으며, 이를 이용하여 뛰어난 발광 특성의 조명기구를 얻을 수 있는 방법에 대하여 검토하였다.In the embodiment, the aluminum silicate-based phosphor [(M 1 - x N x ) 4 (Si 1 - y Al) is excited in the wavelength region of 250 nm to 500 nm by ultraviolet and blue light emitting diodes and the like and exhibits the emission wavelength spectrum in the 400 nm to 800 nm region. y ) 8 O 16 ± δ : Eu 2 + z ] and a method of manufacturing the same, and a method of obtaining a luminaire having excellent light emission characteristics was examined.
실시 예에 따른 알루미늄 실리케이트계 형광체는 화학식 (M1 - xNx)4(Si1 -yAly)8O16±δ:Eu2 + z(여기서, M과 N은 Li, Na, K, Rb, Cs 등을 포함하는 알칼리 토금속 원소 중 각 1종 이상이고, 0 ≤ x ≤ 1, 0 < y < 1, 0 < z ≤ 0.5, δ는 x와 y 값의 변화에 따른 산소 이온의 비화학양론적 몰비 변화이다)으로 나타내는 알루미늄 실리케이트계를 주성분으로 하는 분말로 구현될 수 있다.Aluminum silicate-based phosphors according to the embodiment of the formula (M 1 - x N x ) 4 (Si 1 -y Al y ) 8 O 16 ± δ : Eu 2 + z (where M and N are Li, Na, K, At least one of alkaline earth metal elements including Rb, Cs, etc., and 0 ≤ x ≤ 1, 0 <y <1, 0 <z ≤ 0.5, δ is a non-chemistry of oxygen ions according to the change of x and y values It can be implemented as a powder based on an aluminum silicate system represented by the stoichiometric molar ratio change.
실시 예에 있어서, 알루미늄 실리케이트계 형광체는 큐빅 (cubic), 테트라구날 (Tetragonal), 올소롬빅 (Orthorhombic), 헥사구날 (Hexagonal) 중에서 1개 이상의 결정상을 주상으로 가질 수 있다. In an embodiment, the aluminum silicate-based phosphor may have one or more crystal phases of cubic, tetragonal, orthorhombic, and hexagunal.
실시 예에서 상기 화학식으로 표현되는 알루미늄 실리케이트계 형광체의 제조 방법은 알루미늄(Al) 함유 화합물과, 실리콘(Si) 함유 화합물 및 알칼리 금속(Li, Na, K, Rb, Cs) 함유 화합물, 이트륨(Y) 함유 화합물, 란타늄(La) 함유 화합물, 유로피움(Eu) 함유 화합물을 에탄올, 아세톤, 알콜 및 물 중에서 선택된 용매를 사용하여 혼합한 다음 50oC ~ 200oC 온도 범위에서 건조한 건조체를 고순도 알루미나 보트에 넣어 800oC ~ 1,600oC 및 75% ~ 95% : 25% ~ 5% 인 질소 또는 아르곤과 수소의 혼합 가스 환원 분위기하에서 열처리를 수행할 수 있다.In the embodiment, the method for producing an aluminum silicate-based phosphor represented by the chemical formula includes an aluminum (Al) -containing compound, a silicon (Si) -containing compound, an alkali metal (Li, Na, K, Rb, Cs) -containing compound, and yttrium (Y). ), Lanthanum (La) -containing compound and europium (Eu) -containing compound were mixed using a solvent selected from ethanol, acetone, alcohol and water, and then dried to a high purity alumina dried at a temperature range of 50 o C to 200 o C. The heat treatment may be carried out in a boat at 800 o C to 1600 o C and 75% to 95%: 25% to 5% nitrogen or a mixed gas reducing atmosphere of argon and hydrogen.
실시 예에 있어, 상기 언급된 모든 함유 화합물은 금속의 산화물, 염화물, 수산화물, 질산화물, 탄산화물 및 초산화물 중에서 선택된 단일 또는 2 종 이상의 혼합물로 구현될 수 있으며, 활성제인 유로피움(Eu) 함유 화합물은 알칼리 금속 (Li, Na, K, Rb, Cs), 알루미늄(Al), 실리콘(Si) 함유 화합물의 사용량에 대하여 0.001 몰비 ~ 0.5 몰비의 범위로 첨가될 수 있다. In an embodiment, all of the above-mentioned compounds may be embodied as a single or a mixture of two or more selected from oxides, chlorides, hydroxides, nitrates, carbonates and superoxides of metals, and an active compound europium (Eu) containing compound Silver may be added in the range of 0.001 molar ratio to 0.5 molar ratio with respect to the amount of the alkali metal (Li, Na, K, Rb, Cs), aluminum (Al) and silicon (Si) containing compounds.
실시 예의 발광 소자는 발광 광원과 형광체로 구성되고 적어도 상기 알루미늄 실리케이트계 형광체 또는 상기 제조 방법으로 얻어진 알루미늄 실리케이트계 형광체를 이용할 수 있다.The light emitting device of the embodiment may be composed of a light emitting light source and a phosphor and may use at least the aluminum silicate-based phosphor or the aluminum silicate-based phosphor obtained by the manufacturing method.
실시 예에 따른 형광체는 (M1 - xNx)4(Si1 - yAly)8O16 ±δ를 모체로 하고 Eu2 +를 활성제로 첨가하여 1,200oC 이상의 온도에서 환원처리 공정을 거쳐 제조한 것으로써, 400 nm ~ 800 nm에 이르는 넓은 파장의 발광 스펙트럼을 보이며 자외선 및 청색 영역의 여기 범위를 갖는다.The phosphor according to the embodiment is a (M 1 - x N x ) 4 (Si 1 - y Al y ) 8 O 16 ± δ as a parent and Eu 2 + as an activator to reduce the process at a temperature of 1,200 o C or more It is produced through, and shows a light emission spectrum of a broad wavelength ranging from 400 nm to 800 nm, and has an excitation range of ultraviolet and blue regions.
실시 예에 따르면 Eu2 +를 활성제로 사용하는 알루미늄 실리케이트계 형광체를 제조할 수 있었으며, 자외선 및 청색 발광 다이오드를 여기 에너지원으로 사용하여 발광하는 형광체를 얻을 수 있다.According to this embodiment was able to produce the aluminum silicate-based phosphor of using the Eu 2 + as the activator, it is possible to obtain a phosphor which emits light by ultraviolet and blue light-emitting diode excited by the energy source.
실시 예의 형광체는 자외선 및 청색 발광 다이오드에 결합되어 조명, 디스플레이 및 표시장치 등의 백라이트로 적용될 수 있다.The phosphor of the embodiment may be coupled to ultraviolet and blue light emitting diodes and applied to backlights such as lighting, displays, and display devices.
도 1은 실시 예에 따른 형광체를 얻기 위한 제조방법의 순서도를 나타낸 것이다.
도 2a와 도 2b는 실시 예에서 열처리 온도를 변경시키면서 얻은 형광체를 395 nm의 자외선으로 여기 시켜 얻은 형광체의 흡수 및 발광 스펙트럼을 나타낸 것이다.
도 3a와 도 3b는 실시 예에서 Al3 +와 Si4 +의 상대적인 농도 변화에 따른 395 nm 자외선 여기 휘도 및 파장 변화의 발광 스펙트럼을 나타낸 것이다.
도 4는 실시 예에서 얻은 Eu2 + 활성제의 0 ~ 0.06 몰비 변화에 따른 형광체의 발광 스펙트럼을 나타낸 것이다.
도 5는 실시 예에서 얻은 Eu2 + 활성제의 0 ~ 0.06 몰비 변화에 따른 XRD 회절 패턴을 나타낸 것이다.
도 6은 실시 예에 따른 알루미늄 실리케이트계 형광체와 445 nm 발광 파장을 보이는 청색 형광체를 도포하여 제조한 발광소자(발광파장 395 nm)의 백색 발광 스펙트럼을 나타낸 것이다.1 shows a flowchart of a manufacturing method for obtaining a phosphor according to an embodiment.
2A and 2B illustrate absorption and emission spectra of phosphors obtained by exciting a phosphor obtained by changing a heat treatment temperature with ultraviolet rays of 395 nm in Examples.
Figure 3a and Figure 3b shows the emission spectrum of the 395 nm ultraviolet ray-excited luminance and wavelength changes according to the relative concentration of Al 3 + and Si + 4 in the embodiment.
Figure 4 shows the emission spectrum of the phosphor according to the change of 0 ~ 0.06 molar ratio of the Eu 2 + activator obtained in the example.
Figure 5 shows the XRD diffraction pattern according to the 0 ~ 0.06 molar ratio change of the Eu 2 + activator obtained in the example.
6 illustrates a white emission spectrum of a light emitting device (a light emitting wavelength of 395 nm) manufactured by applying an aluminum silicate-based phosphor and a blue phosphor having a 445 nm emission wavelength according to an embodiment.
이하에서는 예시적인 하나 이상의 구현 예에 따른 (M1 - xNx)4(Si1 - yAly)8O16 ±δ를 모체로 하고, Eu2 +를 활성제로 첨가시킨 다음 화학식 1로 표시되는 자외선 및 청색 여기용 형광체, 상기 형광체 제조방법 및 상기 형광체를 포함하는 백색 발광 소자에 관하여 더욱 상세히 설명한다.
Hereinafter, (M 1 - x N x ) 4 (Si 1 - y Al y ) 8 O 16 ± δ according to one or more exemplary embodiments as a parent, Eu 2 + is added as an active agent and then represented by the formula (1) The ultraviolet and blue excitation phosphor, the phosphor manufacturing method, and the white light emitting device including the phosphor will be described in more detail.
화학식1
(M1 - xNx)4(Si1 - yAly)8O16 ±δ:Eu2 + z (M 1 - x N x ) 4 (Si 1 - y Al y ) 8 O 16 ± δ : Eu 2 + z
상기 화학식에서, M과 N은 Li, Na, K, Rb, Cs 등을 포함하는 알칼리 토금속 군에서 선택된 각 1종 이상의 원소이고, 0 ≤ x ≤ 1, 0 < y < 1, 0 < z ≤ 0.5, δ는 x와 y 값의 변화에 따른 산소 이온의 비화학양론적 몰비 변화이다.In the above formula, M and N are at least one element selected from the group of alkaline earth metals including Li, Na, K, Rb, Cs, etc., and 0 ≦ x ≦ 1, 0 <y <1, 0 <z ≦ 0.5 , δ is the change in the nonstoichiometric molar ratio of oxygen ions with the change of x and y values.
상기 형광체에서 (M1 - xNx)4(Si1 - yAly)8O16 ±δ는 결정 모재이며, 상기 Eu2 +는 활성제이다. 상기 Eu2 + 만을 포함하는 알루미늄 실리케이트계 형광체 이외에 망간(Mn), 철(Fe), 코발트(Co), 니켈(Ni), 구리(Cu), 이트륨(Y) 및 란탄(La) 중에서 선택된 단일 또는 2 종 이상의 부활성제가 일정 조성 범위에서 추가적으로 포함될 수 있으며, 이에 따라 상기 부활성제는 상기 형광체의 발광 스펙트럼에 영향을 줄 수 있다.In the phosphor (M 1 - x N x) 4 (Si 1 - y Al y) 8 O 16 ± δ is a crystal base material, wherein Eu + 2 is the active agent. A single or selected from manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), yttrium (Y) and lanthanum (La) in addition to the aluminum silicate-based phosphor containing only Eu 2 + Two or more kinds of deactivator may be additionally included in a certain composition range, whereby the deactivator may affect the emission spectrum of the phosphor.
실시 예에 따른 형광체의 원료 물질로는 알루미늄 나이트레이트(Al(NO3)3), 알루미늄 옥사이드(Al2O3), 알루미늄 클로라이드(AlCl3), 소듐 나이트레이트(NaNO3), 소듐 클로라이드(NaCl), 테트라올소실리케이트(Tetraorthosilicate, TEOS), 메타-소듐 실리케이트(Na2SiO3), 유로피움 클로라이드(EuCl3), 유로피움 나이트레이트(Eu(NO3)3)를 사용할 수 있다. 또한, 필요에 따라, 리튬 나이트레이트(LiNO3), 리튬 클로라이드(LiCl), 포타슘 나이트레이트(KNO3), 포타슘 클로라이드(KCl), 이트륨 나이트레이트(Y(NO3)3), 란타늄 나이트레이트(La(NO3)3), 망간 클로라이드(MnCl2), 망간 나이트레이트(Mn(NO3)2), 카파 나이트레이트(Cu(NO3)2) 등을 원료로 하는, 망간(Mn), 철(Fe), 코발트(Co), 니켈(Ni), 구리(Cu), 이트륨(Y) 및 란탄(La)등의 원소로 치환될 수 있다.As a raw material of the phosphor according to the embodiment, aluminum nitrate (Al (NO 3 ) 3 ), aluminum oxide (Al 2 O 3 ), aluminum chloride (AlCl 3 ), sodium nitrate (NaNO 3 ), sodium chloride (NaCl ), Tetraorthosilicate (TEOS), meta-sodium silicate (Na 2 SiO 3 ), europium chloride (EuCl 3 ), europium nitrate (Eu (NO 3 ) 3 ) can be used. In addition, if necessary, lithium nitrate (LiNO 3 ), lithium chloride (LiCl), potassium nitrate (KNO 3 ), potassium chloride (KCl), yttrium nitrate (Y (NO 3 ) 3 ), lanthanum nitrate ( Manganese (Mn), iron based on La (NO 3 ) 3 ), manganese chloride (MnCl 2 ), manganese nitrate (Mn (NO 3 ) 2 ), and kapparate (Cu (NO 3 ) 2 ) It may be substituted with elements such as (Fe), cobalt (Co), nickel (Ni), copper (Cu), yttrium (Y), and lanthanum (La).
상기의 원료물질을 가지고 알루미늄 실리케이트계 형광체를 다음의 방법에 의해 제조할 수 있다. 먼저, 알루미늄 나이트레이트(Al(NO3)3), 소듐 나이트레이트(NaNO3), 테트라올소실리케이트(Tetraorthosilicate, TEOS), 유로피움 클로라이드 (EuCl3)를 상기 화학식 1의 조성비에 따라 칭량한다. 그리고, 에탄올, 아세톤, 알콜 및 물 중에서 1종 이상의 선택된 용매를 사용하여 상기 원료물질을 혼합한다. 선택된 용매와 혼합된 원료물질을 교반 및 초음파 진동장치(ultra sonic)를 이용하여 균일한 조성이 되도록 섞는다. With the above raw material, an aluminum silicate-based phosphor can be produced by the following method. First, aluminum nitrate (Al (NO 3 ) 3 ), sodium nitrate (NaNO 3 ), tetraolsosilicate (Tetraorthosilicate, TEOS) and europium chloride (EuCl 3 ) are weighed according to the composition ratio of Chemical Formula 1. The raw materials are then mixed using one or more selected solvents from ethanol, acetone, alcohol and water. The raw materials mixed with the selected solvent are mixed to a uniform composition by using agitation and ultra sonic.
균일한 조성을 얻기 위해 교반 및 울트라 소닉을 이용하여 충분히 혼합하고, 혼합물을 오븐에서 50oC ~ 200oC 의 온도범위에서 완전 건조될 때까지 건조한다. 건조된 혼합물을 고순도 알루미나 도가니에 넣고 5%/95%의 수소/질소 혼합 가스의 환원 분위기에서 열처리를 한다. 열처리 온도는 1,200oC 이상으로, 열처리 온도가 1200 oC 미만이면 모체상 이외의 2차 상의 형성으로 발광 강도가 감소하게 된다. 따라서 열처리 온도는 1,200oC 이상으로 하고 열처리 시간은 3 시간 이상으로 한다.The mixture is sufficiently mixed using stirring and ultrasonic to obtain a uniform composition, and the mixture is dried in an oven until it is completely dried in a temperature range of 50 ° C. to 200 ° C. The dried mixture is placed in a high purity alumina crucible and heat treated in a reducing atmosphere of 5% / 95% hydrogen / nitrogen mixed gas. The heat treatment temperature is 1,200 ° C. or more, and when the heat treatment temperature is less than 1200 ° C., the emission intensity is reduced by the formation of a secondary phase other than the parent phase. Therefore, the heat treatment temperature is 1,200 o C or more and the heat treatment time is 3 hours or more.
환원 분위기를 형성하여 주지 않으면 유로피움(Eu)원소가 2가(Eu2 +)로 환원되지 못하고 산화되어 3가(Eu3 +)로 존재하여 원하는 발광 파장을 얻을 수 없으므로 환원 분위기를 형성해 주어야 하며, 상기 수소/질소 혼합 가스는 2% ~ 25% 부피 비율로 혼합된 혼합가스를 사용한다. 열처리 후 상온까지 공냉시키고, 충분히 분쇄(grinding)하여 분말 형광체를 얻는다. If it does not form a reducing atmosphere, the europium (Eu) element cannot be reduced to divalent (Eu 2 + ) and oxidized to exist as trivalent (Eu 3 + ) to obtain a desired emission wavelength. Therefore, a reducing atmosphere must be formed. The hydrogen / nitrogen mixed gas uses a mixed gas mixed at a volume ratio of 2% to 25%. After heat treatment, the mixture was cooled to room temperature and sufficiently ground to obtain a powder phosphor.
실시 예에 따른 발광소자는 상기 화학식 1에 따른 알루미늄 실리케이트계 형광체와 반도체 발광다이오드 칩을 포함할 수 있다. 상기 알루미늄 실리케이트계 형광체는 상기 발광 다이오드 칩에서 방출된 광에 의해 여기 될 수 있다. The light emitting device according to the embodiment may include an aluminum silicate-based phosphor according to Chemical Formula 1 and a semiconductor LED chip. The aluminum silicate-based phosphor may be excited by light emitted from the light emitting diode chip.
상기 발광소자의 한 예로서, 발광다이오드는 광을 내는 광원, 상기 광원을 지지하는 기판 및 상기 광원 주위를 몰딩한 몰딩부재를 포함할 수 있다. 따라서, 실시 예에 따른 알루미늄 실리케이트계 형광체 및 몰딩부재로써 에폭시를 포함하는 발광소자용 코팅 형광체 조성물을 상기 발광다이오드 칩의 주위에 도포함으로써 발광다이오드를 구성할 수 있다.
As an example of the light emitting device, the light emitting diode may include a light source for emitting light, a substrate supporting the light source, and a molding member molded around the light source. Therefore, the light emitting diode may be configured by applying a coating phosphor composition for a light emitting device including an epoxy as an aluminum silicate-based phosphor and a molding member around the light emitting diode chip.
실시 예 1: (Na0 .75K0 .25)4(Si0 .56Al0 .44)8O16 .24:Eu2 + 0.05 형광체의 열처리 온도에 따른 제조.Example 1: (Na 0 .75 K 0 .25) 4 (
(Na0 .75K0 .25)4(Si0 .56Al0 .44)8O16 .24:Eu2 + 0. 05형광체의 조성을 갖는 형광체를 위의 방법을 이용하여 제조하였다. (Na 0 .75 K 0 .25) 4 (
[도1]은 실시 예에서 제시한 (M1 - xNx)4(Si1 - yAly)8O16 ±δ:Eu2 + z 조성의 알루미늄 실리케이트계 형광체를 제조하기 위한 대략적인 순서도를 나타낸 것이다. 실시 예에서 제시한 알루미늄 실리케이트계 형광체를 제조하기 위해, 알루미늄 나이트레이트(Al(NO3)3), 포타슘 나이트레이트(KNO3), 소듐 나이트레이트(NaNO3), 테트라올소실리케이트(Tetraorthosilicate, TEOS), 유로피움 클로라이드(EuCl3) 칭량한 후, 에탄올, 아세톤, 알코올 및 물 중에서 선택된 용매에 녹인 후, 교반을 하여 균일한 조성이 되도록 혼합하였다. 오븐에서 120oC 의 온도에서 완전 건조하고 1,200oC ~ 1,500oC의 온도에서 3시간 동안 열처리 하였다. 여기서, 환원 분위기 유지를 위하여 5%/95% 수소/질소 혼합가스를 사용하였다. 위와 같은 방법으로 제조한 알루미늄 실리케이트 형광체의 열처리 온도에 따른 흡수 및 발광 스펙트럼을 [도2a]와 [도2b]에 나타내었다.
1 is a schematic flowchart for preparing an aluminum silicate-based phosphor of (M 1 - x N x ) 4 (Si 1 - y Al y ) 8 O 16 ± δ : Eu 2 + z composition shown in the Examples It is shown. In order to prepare the aluminum silicate-based phosphors presented in the examples, aluminum nitrate (Al (NO 3 ) 3 ), potassium nitrate (KNO 3 ), sodium nitrate (NaNO 3 ), tetraolsosilicate (TEOS) After weighing, europium chloride (EuCl 3 ), it was dissolved in a solvent selected from ethanol, acetone, alcohol, and water, followed by stirring to obtain a uniform composition. The oven was completely dried at 120 ° C. and heat-treated at 1,200 ° C. to 1500 ° C. for 3 hours. Here, 5% / 95% hydrogen / nitrogen mixed gas was used to maintain the reducing atmosphere. Absorption and emission spectra according to the heat treatment temperature of the aluminum silicate phosphor prepared by the above method are shown in FIGS. 2a and 2b.
실시 예 2: (Na0 .75K0 .25)4(Si1 - yAly)8O16 긴:Eu2 + 0.05 (0 < y ≤ 0.6, -0.4 ≤δ ≤ 0.24), Al과 Si의 상대적인 농도에 따른 알루미늄 실리케이트 형광체의 PL 스펙트럼 측정.Example 2: (Na 0 .75 K 0 .25) 4 (Si 1 - y Al y) 8 O 16 long: Eu 2 + 0.05 (0 <y ≤ 0.6, -0.4 ≤ δ ≤ 0.24), PL spectra of aluminum silicate phosphors with relative concentrations of Al and Si.
상기 실시 예 1에 따라 만들어진 형광체의 Al과 Si의 상대적인 농도에 따른 알루미늄 실리케이트 형광체의 PL 스펙트럼을 측정 하였으며, Al3 + 농도가 증가함에 따라 최대 발광 강도를 y=0.48에서 보였으며[도3a], 555 nm 부근에서 관찰되는 주피크가 점점 575 nm 부근의 장파장으로 이동됨을 [도3b]에 나타내었다.
The embodiment was Example 1 measuring the PL spectrum of the aluminum silicate phosphor according to the relative concentration of Al and Si in the phosphor made in accordance with, Al 3 + concentration increases the maximum light emission intensity showed at y = 0.48, as Fig. 3a], It is shown in Fig. 3b that the main peak observed near 555 nm is gradually shifted to the long wavelength near 575 nm.
실시 예 3: (Na0 .75K0 .25)4(Si0 .52Al0 .48)8O16 .08:Eu2 + z, (0 < z ≤ 0.06) 몰 농도에 따른 알루미늄 실리케이트 형광체의 발광 스펙트럼 측정.Example 3: (Na 0 .75 K 0 .25) 4 (
상기 실시 예 1에따라 만들어진 형광체의 Eu2 + 농도에 따른 PL 스펙트럼을 측정하였으며, Eu2 + 농도가 증가함에 따라 발광 강도가 증가[도4]하고, 555 nm 부근에서 주피크가 관찰되었다.
PL spectra were measured according to the concentration of Eu 2 + phosphor made according to Example 1, Eu 2 + concentration increases as a main peak was observed the emission intensity is increased in the vicinity of [4], and 555 nm, depending.
실시 예 4: (Na0 .75K0 .25)4(Si0 .52Al0 .48)8O16 .08:Eu2 +z, (0 < z ≤ 0.06) Eu2 + 몰비에 따른 알루미늄 실리케이트 형광체의 XRD 회절 패턴.Example 4: (Na 0 .75 K 0 .25) 4 (
[도 5]는 실시 예에 의한 (Na0 .75K0 .25)4(Si0 .52Al0 .48)8O16 .08:Eu2 + z 조성의 z값을 0 ~ 0.06 몰비로 변화시키면서 실시 예 1에 따라 만든 알루미늄 실리케이트 형광체의 XRD 회절 패턴이다.
[Figure 5] is (Na 0 .75 K 0 .25) 4 (
실시 예 5: [도 6]은 자외선 발광 다이오드에 도포된 알루미늄 실리케이트계 형광체의 발광 스펙트럼을 나타낸 것이다. 실시 예는 색순도가 뛰어나고 색의 연색성 (CRI ~ 90)이 뛰어난 백색 LED 소자를 제공한다. 백색 LED 소자는 실시 예에서 제조된 알루미늄 실리케이트계 형광체와 청색 형광체를 에폭시 수지에 균일하게 분산시켜 발광 다이오드의 칩 부분에 도포하고, 도포된 청색 형광체 및 알루미늄 실리케이트계 형광체를 자외선 여기 하에서 발광케 한다. 상기 사용된 청색 형광체는 440 nm ~ 470 nm의 발광파장 영역을 가지는 것을 선택한다.Example 5 FIG. 6 shows emission spectra of aluminum silicate-based phosphors applied to ultraviolet light emitting diodes. The embodiment provides a white LED device having excellent color purity and excellent color rendering (CRI ~ 90). The white LED device uniformly disperses the aluminum silicate-based phosphor and the blue phosphor prepared in the embodiment in an epoxy resin, and applies the chip to the chip portion of the light emitting diode, and causes the applied blue phosphor and the aluminum silicate-based phosphor to emit light under ultraviolet excitation. The used blue phosphor is selected to have a light emission wavelength region of 440 nm ~ 470 nm.
이상에서 실시 예들에 설명된 특징, 구조, 효과 등은 본 발명의 적어도 하나의 실시 예에 포함되며, 반드시 하나의 실시 예에만 한정되는 것은 아니다. 나아가, 각 실시 예에서 예시된 특징, 구조, 효과 등은 실시 예들이 속하는 분야의 통상의 지식을 가지는 자에 의해 다른 실시 예들에 대해서도 조합 또는 변형되어 실시 가능하다. 따라서 이러한 조합과 변형에 관계된 내용들은 본 발명의 범위에 포함되는 것으로 해석되어야 할 것이다.Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.
또한, 이상에서 실시 예를 중심으로 설명하였으나 이는 단지 예시일 뿐 본 발명을 한정하는 것이 아니며, 본 발명이 속하는 분야의 통상의 지식을 가진 자라면 본 실시 예의 본질적인 특성을 벗어나지 않는 범위에서 이상에 예시되지 않은 여러 가지의 변형과 응용이 가능함을 알 수 있을 것이다. 예를 들어, 실시 예에 구체적으로 나타난 각 구성 요소는 변형하여 실시할 수 있는 것이다. 그리고 이러한 변형과 응용에 관계된 차이점들은 첨부된 청구 범위에서 규정하는 본 발명의 범위에 포함되는 것으로 해석되어야 할 것이다.In addition, the above description has been made with reference to the embodiments, which are merely exemplary and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated above in the range without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
Claims (8)
[화학식]
(M1 - xNx)4(Si1 - yAly)8O16 ±δ:Eu2 + z
상기 화학식에서, M과 N은 Li, Na, K, Rb, Cs 을 포함하는 알칼리 토금속 군에서 선택된 각 1종 이상의 원소이고, 그 농도 범위는 0 ≤ x ≤ 1, 0 < y < 1, 0 < z ≤ 0.5, δ는 x와 y 값의 변화에 따른 산소이온의 비화학양론적 몰비 변화이다.Next, an aluminum silicate-based phosphor represented by [Formula];
[Chemical Formula]
(M 1 - x N x ) 4 (Si 1 - y Al y ) 8 O 16 ± δ : Eu 2 + z
In the above formula, M and N are at least one element selected from the group of alkaline earth metals including Li, Na, K, Rb, and Cs, and the concentration range is 0 ≦ x ≦ 1, 0 <y <1, 0 < z ≤ 0.5, δ is the change in the nonstoichiometric molar ratio of oxygen ions with the change of x and y values.
상기 알루미늄 실리케이트계 형광체의 크기는 0.5μm ~ 20μm인 형광체.The method of claim 1,
The size of the aluminum silicate-based phosphor is 0.5μm ~ 20μm phosphor.
상기 알루미늄 실리케이트계 형광체는 250 nm ~ 500 nm의 여기 파장에서 400 nm ~ 800 nm의 발광 파장을 갖는 형광체.The method of claim 1,
The aluminum silicate-based phosphor has a light emission wavelength of 400 nm to 800 nm at an excitation wavelength of 250 nm to 500 nm.
상기 혼합물을 50oC ~ 200oC 온도 범위에서 건조하는 단계;
상기 건조된 혼합물을 800oC ~ 1600oC 온도 및 75% ~ 95% : 25% ~ 5% 인 질소 또는 아르곤과 수소의 혼합 가스 환원 분위기하에서 열처리하는 단계;
를 포함하는 형광체 제조방법.Forming a mixture using at least one solvent selected from ethanol, acetone, alcohol and water for the aluminum (Al) containing compound, the silica (Si) containing compound, the alkali metal containing compound, and the europium (Eu) containing compound;
Drying the mixture at a temperature ranging from 50 ° C. to 200 ° C .;
Heat-treating the dried mixture in a gas reducing atmosphere of nitrogen or argon and hydrogen at 800 ° C. to 1600 ° C. temperature and 75% to 95%: 25% to 5%;
Phosphor production method comprising a.
상기 알루미늄(Al) 함유 화합물, 실리카(Si) 함유 화합물, 알칼리 금속 함유 화합물, 유로피움(Eu) 함유 화합물은 금속의 산화물, 염화물, 수산화물, 질산화물, 탄산화물 및 초산화물 중에서 선택된 단일 또는 2종 이상의 혼합물인 형광체 제조방법.5. The method of claim 4,
The aluminum (Al) -containing compound, silica (Si) -containing compound, alkali metal-containing compound, and europium (Eu) -containing compound may be selected from the group consisting of one or two or more selected from oxides, chlorides, hydroxides, nitrates, carbonates and superoxides of metals. Method for producing a phosphor that is a mixture.
상기 유로피움 (Eu) 함유 화합물은 소듐(Na) 함유 화합물, 알루미늄(Al) 함유 화합물, 실리콘(Si) 함유 화합물의 사용량에 대하여 0.001 몰비 ~ 0.5 몰비로 첨가되는 형광체 제조방법.The method according to claim 4 or 5,
The europium (Eu) -containing compound is a phosphor manufacturing method is added in an amount of 0.001 to 0.5 molar ratio with respect to the amount of the sodium (Na) containing compound, aluminum (Al) containing compound, silicon (Si) containing compound.
상기 유로피움(Eu) 함유 화합물 외에 부활성제로서 망간(Mn), 철(Fe), 크롬(Cr), 칼슘(Ca), 아연(Zn), 코발트(Co), 니켈(Ni), 구리(Cu), 이트륨(Y)을 포함하는 전이금속과, 란탄(La), 세륨(Ce), 프라세듐(Pr), 네오디뮴(Nd), 사마륨(Sm), 가돌륨(Gd), 터븀(Tb), 디스프로슘(Dy), 어븀(Er), 튤륨(Tm), 이터븀(Yb), 루테튬(Lu)을 포함하는 희토류 금속과, 갈륨(Ga), 게르마늄(Ge), 인듐(In)을 포함하는 금속원소 중에서 선택된 단일 또는 2종 이상의 원소를, 그 함유율이 알루미늄(Al), 소듐(Na), 실리콘(Si) 함유 화합물의 사용량에 대하여 0.001 몰비 ~ 0.5 몰비로 첨가하는 형광체 제조방법.5. The method of claim 4,
Manganese (Mn), iron (Fe), chromium (Cr), calcium (Ca), zinc (Zn), cobalt (Co), nickel (Ni), copper (Cu) as an additive in addition to the europium (Eu) -containing compound ), A transition metal containing yttrium (Y), lanthanum (La), cerium (Ce), prasedium (Pr), neodymium (Nd), samarium (Sm), gadolium (Gd), terbium (Tb), Rare earth metals including dysprosium (Dy), erbium (Er), tulium (Tm), ytterbium (Yb) and lutetium (Lu), and metals including gallium (Ga), germanium (Ge) and indium (In) A method for producing a phosphor, wherein a single or two or more elements selected from the elements are added in an amount of 0.001 mol to 0.5 mol with respect to the amount of the aluminum (Al), sodium (Na), and silicon (Si) -containing compounds.
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