KR20130057676A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
KR20130057676A
KR20130057676A KR1020110123539A KR20110123539A KR20130057676A KR 20130057676 A KR20130057676 A KR 20130057676A KR 1020110123539 A KR1020110123539 A KR 1020110123539A KR 20110123539 A KR20110123539 A KR 20110123539A KR 20130057676 A KR20130057676 A KR 20130057676A
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KR
South Korea
Prior art keywords
light emitting
emitting device
lead frame
main body
conductive resin
Prior art date
Application number
KR1020110123539A
Other languages
Korean (ko)
Inventor
김대현
마사키 소후에
국정규
고건유
장규호
Original Assignee
삼성전자주식회사
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Priority to KR1020110123539A priority Critical patent/KR20130057676A/en
Publication of KR20130057676A publication Critical patent/KR20130057676A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

Abstract

The present invention relates to a light emitting device,
An aspect of the present invention includes at least one pair of lead frames, a body having a recessed portion exposing the lead frame at a lower portion thereof, a light emitting element disposed on the lead frame within the recessed portion, and metal particles; The light emitting device may include a heat conduction resin layer formed to encapsulate the light emitting device in the concave portion, and a wavelength converter disposed on the light emitting device to be in contact with the lead frame and the heat conduction resin layer and spaced apart from the main body. have.

Description

Light Emitting Device

The present invention relates to a light emitting device.

A light emitting diode (LED), which is one type of semiconductor light emitting device, is a semiconductor device capable of generating light of various colors due to recombination of electrons and holes at a junction portion of p and n type semiconductors when an electric current is applied. Such a light emitting diode has been continuously increasing in demand because it has many advantages such as a long lifetime, a low power supply, an excellent initial driving characteristic, and a high vibration resistance as compared with a light emitting device based on a filament. Particularly, in recent years, a group III nitride semiconductor capable of emitting light in a short wavelength range of a blue series has been spotlighted.

After such a nitride light emitting device has been developed, its application range has been expanded, and various studies have been attempted as light sources for general lighting and electrical equipment. In particular, conventionally, the light emitting device has been mainly used as a component that is applied to low current / low output mobile products, and in recent years, its application range is gradually extended to the high current / high output field. Accordingly, studies are being actively conducted to improve heat dissipation characteristics of light emitting devices that generate a large amount of heat.

One of the objects of the present invention is to provide a light emitting device having improved heat dissipation efficiency and improved reliability.

Another object of the present invention is to provide a light emitting device having improved light extraction efficiency.

According to an aspect of the present invention,

At least one pair of lead frames, a body exposing the lead frame at a lower portion thereof, having a recess, a light emitting element disposed on the lead frame in the recess, and metal particles and emitting light in the recess. Provided is a light emitting device including a thermally conductive resin layer formed to encapsulate a device, and a wavelength converter disposed on the light emitting device and in contact with the lead frame and the thermally conductive resin layer and spaced apart from the main body.

In one embodiment of the present invention, the lead frame may be bent from the lower part of the main body to the upper part to contact the wavelength converter at the upper part of the main body.

In one embodiment of the present invention, the upper surface of the wavelength converter may be located above the upper surface of the body.

In one embodiment of the present invention, the thermal conductive resin layer may include at least one metal particles of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au.

In one embodiment of the present invention, the thermal conductive resin layer may include a silicone or an epoxy resin.

In one embodiment of the present invention, the wavelength converter may include at least one of a phosphor and a quantum dot.

In one embodiment of the present invention, the wavelength converter may include a wavelength conversion unit including at least one of a phosphor and a quantum dot and a thermally conductive resin cover to seal the wavelength conversion unit.

In one embodiment of the present invention, the thermally conductive resin cover portion may contact the thermally conductive resin layer and the lead frame.

In one embodiment of the present invention, the wavelength converter may be disposed to cover the entire surface of the heat conductive resin layer inside the body.

In one embodiment of the present invention, the lead frame may be exposed to the outside of the lower region where the light emitting device is disposed.

In one embodiment of the present invention, the lead frame may extend into the recess to reflect the light emitted from the light emitting device to guide upward.

In one embodiment of the present invention, the main body may be formed to surround the lead frame but cover a portion of the upper surface of the lead frame.

According to one embodiment of the present invention, it is possible to provide a light emitting device having improved heat dissipation efficiency and improved reliability.

According to one embodiment of the present invention, a light emitting device having improved light extraction efficiency can be provided.

1 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present invention.
2 is a schematic cross-sectional view of a light emitting device according to another embodiment of the present invention.
3 is a schematic cross-sectional view of a light emitting device according to still another embodiment of the present invention.
4 is a schematic cross-sectional view of a light emitting device according to still another embodiment of the present invention.
5 is a simulation result showing the temperature difference between the wavelength converter applied to the existing structure according to the power consumption (W) and the wavelength converter according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Further, the embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shapes and sizes of the elements in the drawings may be exaggerated for clarity of description, and the elements denoted by the same reference numerals in the drawings are the same elements.

1 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present invention.

Referring to FIG. 1, the light emitting device 100 according to the present exemplary embodiment includes at least one pair of lead frames 10a and 10b, a body 20 exposing the lead frames 10a and 10b at a lower portion thereof and having a concave portion. The light emitting device 30 disposed on the lead frames 10a and 10b in the concave portion, and the heat conductive resin layer 40 formed to encapsulate the light emitting element 30 in the concave portion and including metal particles. And a wavelength converter 50 disposed on the light emitting device 30. In the present embodiment, the wavelength converter 50 may be in contact with the lead frames 10a and 10b and the thermal conductive resin layer 40 but spaced apart from the main body 20.

The light emitting device 30 may be any photoelectric device that emits light when an electric signal is applied, and typically includes an LED chip. For example, the light emitting device 30 may be a gallium nitride (GaN) -based LED chip that emits blue light, and as will be described later, at least some of the blue light is converted into light of a different color by the wavelength converter 50. Can be converted.

The pair of lead frames 10a and 10b may be electrically connected to the light emitting device 30 through the conductive wire W and may be used as a terminal for applying an external electric signal. To this end, the pair of lead frames 10a and 10b may be made of a metal material having excellent electrical conductivity.

As shown in FIG. 1, one of the pair of lead frames 10a and 10b may be provided as a mounting area of the light emitting device 30. In the present embodiment, light emission of the lead frames 10a and 10b is performed. Since the lower portion of the region in which the device 30 is mounted is exposed to the outside from the lower surface of the main body 20, heat dissipation may be more effectively performed.

In the present embodiment, a pair of electrodes (not shown) connected to the light emitting device 30 is positioned above, and the structure is connected to the lead frames 10a and 10b through the pair of conductive wires W. Depending on the form, the connection scheme may vary. For example, the lead frame 10a provided as a mounting area may be directly electrically connected without using a wire, and only the other lead frame 10b may be connected with a conductive wire. In addition, without the conductive wire, the light emitting device 30 may be disposed in a so-called flip-chip bonding method.

In the present embodiment, only one light emitting device 30 is provided on the lead frames 10a and 10b. However, two or more light emitting devices 30 may be provided. Furthermore, although the conductive wire W is shown as an example of the wiring structure, it may be appropriately replaced by another type of wiring structure, for example, a metal line, if it can perform the electrical signal transmission function.

The main body 20 may include a recess to accommodate the light emitting device 30, and may serve to fix the at least one pair of lead frames 10a and 10b. The light emitting device 30 may be disposed on the lead frames 10a and 10b exposed from the recesses of the main body 20, and the lead frames 10a and 10b may be exposed below the main body 20. In this case, an area in which the light emitting device 30 is disposed among the lead frames 10a and 10b may be exposed from the lower portion of the main body 20 to more effectively radiate heat.

The material constituting the main body 20 is not particularly limited, but it is preferable to use a material having electrical insulation and excellent heat emission performance and light reflectance. In this aspect, the main body 20 may have a structure in which light reflective particles (eg, TiO 2 ) are dispersed in the transparent resin and the transparent resin.

The heat conductive resin layer 40 may be formed in the concave portion of the main body 20 to encapsulate the light emitting device 30. The thermally conductive resin layer 40 may include metal particles in silicon, epoxy-based transparent resin. For example, the thermally conductive resin layer 40 may be formed of Ag, Ni, Al, Rh, Pd, Ir, Ru, It may include at least one metal particle of Mg, Zn, Pt, Au. Accordingly, the thermally conductive resin layer 40 may have high thermal conductivity, and the wavelength converter 50 disposed thereon covers the entire surface of the thermally conductive resin layer 40 inside the main body 20. The heat dissipation may be more effectively emitted from the wavelength converter 50.

The wavelength converter 50 may contact the lead frames 10a and 10b and the thermal conductive resin layer 40 on the light emitting device 30, but may be spaced apart from the main body 20. The wavelength converter 50 may include at least one of a wavelength conversion material for converting the wavelength of light emitted from the light emitting device 30, for example, a phosphor and a quantum dot.

The phosphor may be made of a material that converts wavelengths into any one of yellow, red, and green, and the type of the phosphor may be determined by the wavelength emitted from the light emitting device 30. . The phosphor may include any one of YAG-based, TAG-based, Silicate-based, Sulfide-based, or Nitride-based fluorescent materials. For example, a white light emitting semiconductor light emitting device can be obtained when a phosphor for wavelength conversion into yellow is applied to a blue light emitting LED chip.

Quantum dots are nanocrystals of a semiconductor material having a diameter of about 1 to 10 nm, and exhibit a quantum confinement effect. The quantum dots convert wavelengths of light emitted from the light emitting device 30 to generate wavelength converted light, that is, fluorescence. Examples of the quantum dots include Si-based nanocrystals, group II-VI compound semiconductor nanocrystals, group III-V compound semiconductor nanocrystals, and group IV-VI compound semiconductor nanocrystals. Each can be used alone or a mixture thereof.

The emission of quantum dots is generated by the transition of electrons excited by the valence band in the conduction band. Even in the same material, the wavelength varies depending on the particle size. As the size of the quantum dot decreases, light of a desired wavelength range may be obtained by adjusting the size of the quantum dot to emit light having a short wavelength. In this case, the size of the quantum dots can be controlled by appropriately changing the growth conditions of the nanocrystals.

The wavelength converter 50 may be applied in the form of a mixture of a phosphor and a quantum dot, for example, the wavelength of the light emitted from the light emitting element 30 to convert the wavelength to green light and the quantum dot to convert the wavelength to red light wavelength Included together in the converter, it can emit light of various wavelengths.

In the case of the wavelength converter 50 applied to the light emitting device, there is a problem that the color conversion efficiency is lowered by the heat emitted from the light emitting device 30, especially in the case of a high output light emitting device package with a high driving current reliability due to high heat It can be greatly reduced.

However, in the present embodiment, the wavelength converter 50 may be disposed to contact the thermally conductive resin layer 40 and the lead frames 10a and 10b having high thermal conductivity, thereby improving heat dissipation characteristics. In addition, the lead frames 10a and 10b are exposed to the outside through the lower portion of the main body 20 to allow electrical connection by directly contacting the wiring structure formed on the substrate on which the light emitting device 100 is mounted. The heat generated from the light emitting device 30 may be easily released to the outside.

In addition, the wavelength converter 50 is disposed in contact with the thermally conductive resin layer 40 and the lead frames (10a, 10b) but spaced apart at a predetermined interval (d) so as not to contact the main body 20, the heat is wavelength It is possible to emit more effectively from the converter 50, thereby providing a light emitting device with improved reliability.

2 is a schematic cross-sectional view of a light emitting device according to another embodiment of the present invention.

The light emitting device 101 according to the present embodiment includes at least a pair of lead frames 11, a main body 21 having a recessed portion exposing the lead frame from below, and a light emitting element 31 within the recessed portion. A wavelength converting member 51 disposed in contact with the lead frame 11 and the thermal conductive resin layer 41 and spaced apart from the main body 21 on the thermal conductive resin layer 41 and the light emitting element 31 formed to be encapsulated. It may include.

In the case of the light emitting device illustrated in FIG. 2, only the shapes of the light emitting device illustrated in FIG. 1 and the lead frame 11 are different. Therefore, descriptions of the same configuration will be omitted and only different configurations will be described.

The lead frame 11 according to the present exemplary embodiment may be bent upward from the lower portion of the main body 21 to contact the wavelength converter 51 at the upper portion of the main body 21, and within the main body 21. It is bent and exposed from the side and bottom surface of the main body 21 to maximize the heat dissipation efficiency by diversifying the heat dissipation path.

On the other hand, when the lead frame 11 extends into the recessed portion of the main body 21 as in the present embodiment, the lead frame 11 reflects the light emitted from the light emitting element 31 and guides it upwards. can do. To this end, the lead frame 11 includes a material of high reflective metal, for example, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, or the like, or the lead frame 11 The surface may be plated with a highly reflective metal material.

3 is a schematic cross-sectional view of a light emitting device according to still another embodiment of the present invention.

Referring to FIG. 3, the light emitting device 102 according to the present embodiment includes at least a pair of lead frames 12, a main body 22 having a recessed portion and exposing the lead frame 12 from below, and in the recessed portions. The light emitting element 32 disposed on the lead frame 12, the thermal conductive resin layer 42 formed to encapsulate the light emitting element in the recess, and the lead frame 12 are in contact with the main body 22 and spaced apart from the main body 22. The wavelength converter 52 may be disposed.

In the case of the light emitting device 102 according to the present embodiment, only the configuration of the light emitting device and the wavelength converter 53 shown in FIG. 1 are different, and the description of the same configuration will be omitted and only the changed configuration will be described.

The wavelength converter 52 according to the present exemplary embodiment may include a wavelength converter 52a including a phosphor or a quantum dot and a thermally conductive resin cover 52b for sealing the wavelength converter 52a.

The wavelength converter 52a may be configured in a form in which a quantum dot or a phosphor is dispersed in a dispersant such as an organic solvent or a polymer resin. For example, the organic solvent may include at least one of toluene, chloroform and ethanol, and the polymer resin may be epoxy, silicone, polystyrene and acrylic. It may include at least one of the acrylate.

The thermally conductive resin cover portion 52b for sealing the wavelength conversion portion 52a is formed of a material similar to the thermally conductive resin layer 43, that is, a metal particle dispersed in an epoxy or silicone resin, and thus has high thermal conductivity. Can have In the case of the present embodiment, the thermally conductive resin cover portion 52b may be disposed to contact the thermally conductive resin layer 42 and the lead frame 12. The thermally conductive resin cover 52b is not only effective in dissipating heat from the wavelength converter 52a to the outside, but also blocks the wavelength converter 52a from an external environment (moisture or oxygen), thereby converting the wavelength converter ( 52) can improve the reliability.

4 is a schematic cross-sectional view of a light emitting device according to still another embodiment of the present invention.

The light emitting device 103 according to the present embodiment has the same configuration as the light emitting device 102 shown in FIG. 3 except that the upper surface of the wavelength converter 53 is located above the upper surface of the main body 23. Have That is, in the present embodiment, the light extraction efficiency can be improved by forming the height t2 of the upper surface of the wavelength converter 53 larger than the height t1 of the main body 23. In addition, in the present embodiment, the main body 23 is formed so as to surround the lead frame 13 and cover a part of the upper surface of the lead frame 13, so that the lead frame 13 is closer to the main body 23. I can fix it firmly.

On the other hand, as a result of performing a simulation comparing the amount of light of the light emitting device 103 shown in Figure 4 and the light emitting device of the structure modified therefrom, when the wavelength converter and the main body is disposed apart so that the wavelength converter is in contact with the main body The amount of light is increased than that of the arrangement, and in the same condition, the amount of light is increased when the top surface of the wavelength converter is located above the top surface of the body than when the top surface of the wavelength converter and the top surface of the body are the same. there was.

Specifically, when the amount of light when the resin containing the phosphor is coated in the recess of the main body is 100, the light amount is about 1.9% when the wavelength converter is disposed to have the same height as the upper surface of the main body and to contact the main body. The amount of light increased by about 8.1% when positioned above the upper surface of the main body and in contact with the main body.

On the other hand, when the wavelength converter has the same height as the upper surface of the main body and is spaced apart from the main body, the amount of light increased by about 17.8%. % Increased.

That is, as shown in FIG. 4, when the upper surface of the wavelength converter 53 is located above the upper surface of the main body 23 but spaced apart from the contact with the main body 23, the light extraction efficiency is remarkably increased. An improved effect could be obtained.

5 is a simulation result showing the temperature difference between the wavelength converter applied to the existing structure according to the power consumption (W) and the wavelength converter according to an embodiment of the present invention.

Specifically, the temperature difference according to the power consumption of the light emitting device 103 according to the embodiment shown in FIG. 4 and the light emitting device having a structure in which the lead frame has a flat plate shape and the wavelength converter does not contact the lead frame is compared. It is a graph. As shown in FIG. 5, as the power consumption, that is, the driving current increases, the temperature difference between the comparative example (the structure where the lead frame and the wavelength converter do not contact) and the embodiment (the structure shown in FIG. 4) increases. Able to know. That is, according to one embodiment of the present invention, it can be seen that the reliability of the high output light emitting device having a large amount of heat emission can be improved more effectively.

The present invention is not limited by the above-described embodiments and the accompanying drawings, but is intended to be limited only by the appended claims. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

100, 101, 102, 103: light emitting devices 10, 11, 12, 13: lead frame
20, 21, 22, 23: main body 30, 31, 32, 33: light emitting element
40, 41, 42, 43: thermally conductive resin layers 50, 51, 52, 53: wavelength converter
52a, 53a: wavelength conversion portion 52b, 53b: thermal conductive resin cover portion

Claims (12)

At least one pair of lead frames;
A main body exposing the lead frame from below and having a concave portion;
A light emitting element disposed on the lead frame in the recess;
A thermally conductive resin layer including metal particles and formed to encapsulate the light emitting device in the recess; And
A wavelength converter contacting the lead frame and the thermal conductive resin layer on the light emitting device and spaced apart from the main body;
.
The method of claim 1,
The lead frame is bent from the bottom of the main body to the upper portion of the light emitting device, characterized in that in contact with the wavelength converter.
The method of claim 1,
The upper surface of the wavelength converter is located above the upper surface of the main body.
The method of claim 1,
The thermally conductive resin layer includes at least one metal particle of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au.
The method of claim 1,
The heat conductive resin layer is a light emitting device, characterized in that containing silicon or epoxy resin.
The method of claim 1,
The wavelength converter includes at least one of a phosphor and a quantum dot.
The method of claim 1,
The wavelength converter includes a wavelength conversion part including at least one of a phosphor and a quantum dot, and a heat conductive resin cover part sealing the wavelength conversion part.
The method of claim 7, wherein
And the thermally conductive resin cover portion is in contact with the thermally conductive resin layer and the lead frame.
The method of claim 1,
And the wavelength converter is disposed to cover the entire surface of the thermal conductive resin layer inside the main body.
The method of claim 1,
The lead frame is a light emitting device, characterized in that the lower portion of the region where the light emitting element is disposed is exposed to the outside.
The method of claim 1,
And the lead frame extends inside the recess to reflect light emitted from the light emitting element and guide the light upward.
The method of claim 1,
And the main body surrounds the lead frame and covers a portion of an upper surface of the lead frame.
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015077369A1 (en) * 2013-11-19 2015-05-28 Qd Vision, Inc. Light emitting device including quantum dots
WO2015121089A1 (en) * 2014-02-11 2015-08-20 Koninklijke Philips N.V. A wavelength converting element, a light emitting module and a luminaire
JP2018037566A (en) * 2016-09-01 2018-03-08 エルジー ディスプレイ カンパニー リミテッド Light source device and display device
JP2018510513A (en) * 2015-03-30 2018-04-12 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Peripheral heat sink device for high brightness light emitting devices
US10374137B2 (en) * 2014-03-11 2019-08-06 Osram Gmbh Light converter assemblies with enhanced heat dissipation
US11294228B2 (en) 2016-03-24 2022-04-05 Saturn Licensing Llc Light-emitting device, display apparatus, and illumination apparatus

Cited By (9)

* Cited by examiner, † Cited by third party
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WO2015077369A1 (en) * 2013-11-19 2015-05-28 Qd Vision, Inc. Light emitting device including quantum dots
WO2015121089A1 (en) * 2014-02-11 2015-08-20 Koninklijke Philips N.V. A wavelength converting element, a light emitting module and a luminaire
US10374137B2 (en) * 2014-03-11 2019-08-06 Osram Gmbh Light converter assemblies with enhanced heat dissipation
JP2018510513A (en) * 2015-03-30 2018-04-12 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Peripheral heat sink device for high brightness light emitting devices
US11005021B2 (en) 2015-03-30 2021-05-11 Koninklijke Philips N.V. Peripheral heat sinking arrangement for high brightness light emitting devices
US11294228B2 (en) 2016-03-24 2022-04-05 Saturn Licensing Llc Light-emitting device, display apparatus, and illumination apparatus
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US11630344B2 (en) 2016-03-24 2023-04-18 Saturn Licensing Llc Light-emitting device, display apparatus, and illumination apparatus
JP2018037566A (en) * 2016-09-01 2018-03-08 エルジー ディスプレイ カンパニー リミテッド Light source device and display device

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