KR20130043060A - Urethane resin composition for polishing pad and polyurethane polishing pad - Google Patents

Urethane resin composition for polishing pad and polyurethane polishing pad Download PDF

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KR20130043060A
KR20130043060A KR1020120103093A KR20120103093A KR20130043060A KR 20130043060 A KR20130043060 A KR 20130043060A KR 1020120103093 A KR1020120103093 A KR 1020120103093A KR 20120103093 A KR20120103093 A KR 20120103093A KR 20130043060 A KR20130043060 A KR 20130043060A
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polishing
polishing pad
resin composition
urethane resin
fumed silica
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KR1020120103093A
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Korean (ko)
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요시유키 오다
히로시 스자키
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디아이씨 가부시끼가이샤
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L75/00Compositions of polyureas or polyurethanes; Compositions of derivatives of such polymers
    • C08L75/04Polyurethanes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00Polymeric products of isocyanates or isothiocyanates
    • C08G18/06Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/08Processes
    • C08G18/10Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
    • C08G18/12Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step using two or more compounds having active hydrogen in the first polymerisation step
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00Polymeric products of isocyanates or isothiocyanates
    • C08G18/06Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/30Low-molecular-weight compounds
    • C08G18/32Polyhydroxy compounds; Polyamines; Hydroxyamines
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/34Silicon-containing compounds
    • C08K3/36Silica
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Polyurethanes Or Polyureas (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)

Abstract

PURPOSE: A urethane resin composition for polishing pads is provided to provide to provide a polishing pad with excellent polishing rate, scratch resistance, and flatness and to have excellent durability. CONSTITUTION: A urethane resin composition for polishing pads comprises a base material which contains a urethane prepolymer which contains an isocyanate group, a hardening agent containing a functional group reactable with the isocyanate group and additionally comprises fumed silica. The use amount of the fumed silica is 0.5-2 parts by weight based on 100.0 parts by weight of the urethane prepolymer. The fumed silica is hydrophobic fumed silica. A polishing pad is obtained by using the urethane resin composition for polishing pads.

Description

연마 패드용 우레탄 수지 조성물 및 폴리우레탄 연마 패드{URETHANE RESIN COMPOSITION FOR POLISHING PAD AND POLYURETHANE POLISHING PAD}Urethane resin composition for polyurethane pad and polyurethane polishing pad TECHNICAL FIELD

본 발명은 유리 기판, 실리콘 웨이퍼, 반도체 디바이스 등의 유리 연마 분야에 사용되는 열경화성 우레탄(TSU) 타입의 연마 패드용 우레탄 수지 조성물 및 그것을 사용하여 얻어진 폴리우레탄 연마 패드에 관한 것이다.The present invention relates to a urethane resin composition for thermosetting urethane (TSU) type polishing pads used in glass polishing fields such as glass substrates, silicon wafers, semiconductor devices and the like, and polyurethane polishing pads obtained using the same.

액정 디스플레이(LCD)용 유리 기판, 하드디스크(HDD)용 유리 기판, 기록 장치용 유리 디스크, 광학용 렌즈, 실리콘 웨이퍼, 반도체 디바이스 등은 고도의 표면 평탄성과 면내 균일성이 요구된다.Glass substrates for liquid crystal displays (LCDs), glass substrates for hard disks (HDDs), glass disks for recording devices, optical lenses, silicon wafers, semiconductor devices and the like require high surface flatness and in-plane uniformity.

반도체 디바이스에서는, 반도체 회로의 집적도가 급격히 증대함에 따라 고밀도화를 목적으로 한 미세화나 다층 배선화가 진행되고, 가공면을 한층 고도로 평탄화하는 기술이 중요하게 되어 있다. 한편, 액정 디스플레이용 유리 기판에서는, 액정 디스플레이의 대형화에 수반하여, 가공면의 보다 고도의 평탄성이 요구되고 있다. 평탄성의 요구가 고도화하는 것에 수반하여, 연마 가공에 있어서의 연마 정밀도나 연마 효율 등의 요구 성능이 높아져 오고 있다.In semiconductor devices, as the degree of integration of semiconductor circuits rapidly increases, miniaturization and multilayer wiring for the purpose of high density proceed, and the technology of further flattening the processed surface becomes important. On the other hand, in the glass substrate for liquid crystal displays, with the enlargement of a liquid crystal display, the higher level flatness of a process surface is calculated | required. As the demand for flatness has been advanced, demanded performances such as polishing accuracy and polishing efficiency in polishing have been increasing.

반도체 디바이스나 광 디바이스의 제조 프로세스에 있어서, 우수한 평탄성을 갖는 표면을 형성할 수 있는 연마 방법으로서, 화학적 기계적 연마법, 소위 CMP(Chemical Mechanical Polishing)가 널리 채용되어 있다.In the manufacturing process of a semiconductor device and an optical device, the chemical mechanical polishing method, what is called CMP (Chemical Mechanical Polishing), is employ | adopted widely as a grinding | polishing method which can form the surface which has the outstanding flatness.

CMP법에서는, 통상, 연마 가공시에, 지립(砥粒)(연마 입자)을 알칼리 용액 또는 산 용액에 분산시킨 슬러리(연마액)를 공급하여 연마하는, 소위 유리(遊離) 지립 방식이 채용되고 있다. 즉, 피연마물(의 가공면)은, 슬러리 중의 지립에 의한 기계적 작용과, 알칼리 용액 또는 산 용액에 의한 화학적 작용으로 평탄화된다. 가공면에 요구되는 평탄성의 고도화에 수반하여, CMP법에 요구되는 연마 정밀도나 연마 효율 등의 연마 성능, 구체적으로는, 고(高)연마 레이트, 비(非)스크래치성, 고평탄성의 요구가 높아지고 있다. CMP의 유리 지립 방식의 연마 패드로서는, 예를 들면 마모의 정도를 적정화하여 연마 성능의 안정화를 도모하는 기술이 보고되어 있다(예를 들면 특허문헌 1 참조). 한편, 폐액 처리나 코스트 문제로부터, 유리 지립을 사용하지 않고 고정 지립형 연마 패드도 제안되어 있다(예를 들면 특허문헌 2 참조).In the CMP method, generally, a so-called glass abrasive grain method of supplying and polishing a slurry (polishing liquid) in which abrasive grains (polishing particles) are dispersed in an alkaline solution or an acid solution during polishing is employed. have. That is, the to-be-processed object (the processed surface) is planarized by the mechanical action by the abrasive grain in a slurry, and the chemical action by alkaline solution or an acid solution. With the advancement of the flatness required for the processing surface, the polishing performance such as polishing accuracy and polishing efficiency required for the CMP method, specifically, high polishing rate, non-scratchability and high flatness are required. It is rising. As a polishing pad of the CMP glass abrasive grain method, the technique which aims at stabilizing polishing performance by optimizing the grade of abrasion, for example is reported (for example, refer patent document 1). On the other hand, from a waste liquid process and a cost problem, the fixed abrasive type polishing pad is also proposed without using a glass abrasive grain (for example, refer patent document 2).

그러나, 상기의 유리 지립 방식의 연마 패드는, 마모량을 제어하기 위해 R값이 0.7~0.9로 낮게 설정되어 있기 때문에, 우레탄 수지가 약간 무르고, 숙성 기간이 수개월에 미치는 등 품질이 안정되지 않은 문제가 있다. 또한, 상기한 비유리 지립 방식인 고정 지립형 연마 패드는 아무래도 스크래치가 발생하기 쉬운 문제가 있다.However, the polishing pad of the glass abrasive grain method described above has a problem in that the urethane resin is slightly soft and the quality of the maturation period is several months, since the R value is set low to 0.7 to 0.9 to control the amount of wear. have. In addition, the fixed abrasive abrasive pad, which is the non-glass abrasive grain method, has a problem that scratches are likely to occur.

이상, 산업계로부터는, 정밀 연마에 끊임없이 요구되는 고연마 레이트, 비스크래치성, 평탄성을 만족하는 연마 패드가 강하게 요구되고 있지만, 아직 발견되고 있지 않은 것이 실정이다.As mentioned above, although an industrial polishing pad strongly demands high polishing rate, non-scratchability, and flatness which are constantly required for precision polishing, it has not been found yet.

일본국 특개2010-76075호 공보Japanese Patent Application Laid-Open No. 2010-76075 일본국 특개2011-142249호 공보Japanese Patent Application Laid-Open No. 2011-142249

본 발명이 해결하려는 과제는, 연마 특성(고연마 레이트, 비스크래치성, 평탄성)이 우수한 CMP법의 연마 패드를 제공하는 것이다.The problem to be solved by the present invention is to provide a CMP polishing pad excellent in polishing characteristics (high polishing rate, non-scratchability, flatness).

본 발명자들은, 상기 과제를 해결하기 위해 연구를 진행시키는 가운데, 첨가제의 종류에 착목하여, 예의 연구를 행했다.MEANS TO SOLVE THE PROBLEM The present inventors earnestly researched in view of the kind of additive, progressing research in order to solve the said subject.

그 결과, 흄드 실리카를 첨가함으로써, 상기 과제를 만족하는 연마 패드가 얻어지는 것을 발견하고, 본 발명을 완성하기에 이르렀다.As a result, by adding fumed silica, it discovered that the polishing pad which satisfy | fills the said subject was obtained, and came to complete this invention.

즉, 본 발명은 이소시아네이트기를 갖는 우레탄 프리폴리머(A)를 함유하는 주제(主劑)와, 이소시아네이트기와 반응하는 관능기를 갖는 화합물(B)을 함유하는 경화제를 함유하는 연마 패드용 우레탄 수지 조성물에 있어서, 흄드 실리카(C)를 더 함유하는 것을 특징으로 하는 연마 패드용 우레탄 수지 조성물 및 폴리우레탄 연마 패드를 제공하는 것이다.That is, this invention is a urethane resin composition for polishing pads which contains the main body containing the urethane prepolymer (A) which has an isocyanate group, and the hardening | curing agent containing the compound (B) which has a functional group which reacts with an isocyanate group, It is to provide a urethane resin composition for a polishing pad and a polyurethane polishing pad, further comprising fumed silica (C).

본 발명의 연마 패드용 우레탄 수지 조성물은, 고연마 레이트, 비스크래치성, 평탄성이 우수한 연마 패드를 제공할 수 있다. 또한, 경시(經時) 사용되어도 연마 특성이 저하하기 어렵고, 내구성이 우수한 것이다.The urethane resin composition for a polishing pad of the present invention can provide a polishing pad excellent in high polishing rate, non-scratchability and flatness. Moreover, even if it is used over time, polishing property is hard to fall and it is excellent in durability.

따라서, 본 발명의 연마 패드용 우레탄 수지 조성물을 사용하여 얻어지는 폴리우레탄 연마 패드는, 액정 디스플레이(LCD)용 유리 기판, 하드디스크(HDD)용 유리 기판, 기록 장치용 유리 디스크, 광학용 렌즈, 실리콘 웨이퍼, 반도체 디바이스, LED용 사파이어 기판, 탄화규소 기판, 비화갈륨 기판 등의 반도체 기판, 광학 기판, 자성(磁性) 기판 등, 고도의 표면 평탄성과 면내 균일성이 요구되는 높은 정밀도의 연마 가공에 유용하다.Therefore, the polyurethane polishing pad obtained using the urethane resin composition for polishing pads of the present invention is a glass substrate for liquid crystal display (LCD), a glass substrate for hard disk (HDD), a glass disk for recording device, an optical lens, silicon Useful for high-precision polishing, such as wafers, semiconductor devices, sapphire substrates for LEDs, silicon carbide substrates, gallium arsenide substrates, optical substrates, magnetic substrates, etc., which require high surface flatness and in-plane uniformity. Do.

본 발명의 연마 패드용 우레탄 수지 조성물은, 이소시아네이트기를 갖는 우레탄 프리폴리머(A)(이하, 「우레탄 프리폴리머(A)」라고 약기함)를 함유하는 주제와, 이소시아네이트기와 반응하는 관능기를 갖는 화합물(B)(이하, 「화합물(B)이라고 약기함」)을 함유하는 경화제와, 흄드 실리카(C)를 함유하는 것이다.The urethane resin composition for a polishing pad of the present invention is a compound containing a urethane prepolymer (A) having an isocyanate group (hereinafter abbreviated as "urethane prepolymer (A)") and a functional group reacting with an isocyanate group (B). (Hereinafter, abbreviated as "compound (B)") and a fumed silica (C) are included.

우선, 상기 우레탄 프리폴리머(A)에 대해서 설명한다. 상기 우레탄 프리폴리머는, 폴리이소시아네이트(a1)와 폴리올(a2)을 종래 공지의 방법에 따라, 반응시켜 얻어지는 것이다.First, the urethane prepolymer (A) will be described. The said urethane prepolymer is obtained by making a polyisocyanate (a1) and a polyol (a2) react in accordance with a conventionally well-known method.

상기 폴리이소시아네이트(a1)로서는, 예를 들면 톨릴렌디이소시아네이트(TDI-100; 2,4-체의 톨루엔디이소시아네이트, TDI-80; 2,4-체와 2,6-체의 톨루엔디이소시아네이트의 혼합물이고, 2,4-체/2,6-체=80/20질량비), 톨리딘디이소시아네이트(TODI), 디페닐메탄디이소시아네이트(약칭 MDI; 그 4,4'-체, 2,4'-체, 또는 2,2'-체, 혹은 그들의 혼합물), 폴리메틸렌폴리페닐폴리이소시아네이트, 카르보디이미드화디페닐메탄폴리이소시아네이트, 자일릴렌디이소시아네이트(XDI), 1,5-나프탈렌디이소시아네이트(NDI), 테트라메틸자일렌디이소시아네이트 등의 방향족계 디이소시아네이트; 혹은 이소포론디이소시아네이트(IPDI), 수첨 디페닐메탄디이소시아네이트(수첨 MDI), 수첨 자일릴렌디이소시아네이트(수첨 XDI) 등의 지환족계 디이소시아네이트; 헥사메틸렌디이소시아네이트, 다이머산디이소시아네이트, 노르보르넨디이소시아네이트 등의 지방족계 디이소시아네이트 등을 들 수 있다. 이들 중에서도 톨릴렌디이소시아네이트(TDI), 톨리딘디이소시아네이트(TODI), 수첨 디페닐메탄디이소시아네이트(수첨 MDI)가, 연마 특성을 보다 향상할 수 있는 점이나, 작업시의 반응성의 제어가 보다 용이한 점에서 바람직하다.As said polyisocyanate (a1), for example, a mixture of tolylene diisocyanate (TDI-100; toluene diisocyanate of 2,4-body, TDI-80; 2,4- and toluene diisocyanate) 2,4-body / 2,6-body = 80/20 mass ratio), tolidine diisocyanate (TODI), diphenylmethane diisocyanate (abbreviated MDI; its 4,4'-form, 2,4'-form) , Or 2,2'-form or mixtures thereof), polymethylene polyphenylpolyisocyanate, carbodiimide-ized diphenylmethane polyisocyanate, xylylene diisocyanate (XDI), 1,5-naphthalenedi isocyanate (NDI), tetra Aromatic diisocyanates such as methyl xylene diisocyanate; Or alicyclic diisocyanates such as isophorone diisocyanate (IPDI), hydrogenated diphenylmethane diisocyanate (hydrogenated MDI), hydrogenated xylylene diisocyanate (hydrogenated XDI); And aliphatic diisocyanates such as hexamethylene diisocyanate, dimer acid diisocyanate and norbornene diisocyanate. Among these, tolylene diisocyanate (TDI), tolidine diisocyanate (TODI), and hydrogenated diphenylmethane diisocyanate (hydrogenated MDI) can improve polishing characteristics more easily, and it is easier to control the reactivity at work. Preferred at

상기 폴리올(a2)로서는, 예를 들면 저분자량 폴리올, 폴리에스테르폴리올, 폴리카보네이트폴리올, 폴리에테르폴리올, 폴리에스테르폴리올, 폴리부타디엔폴리올, 실리콘 폴리올로 이루어지는 군에서 선택되는 적어도 하나의 폴리올을 사용할 수 있다. 이들 폴리올의 종류 및 양은 사용되는 용도에 따라 적의(適宜) 선택되지만, 내(耐)가수분해성의 관점에서, 폴리에테르폴리올을 사용하는 것이 바람직하고, 폴리테트라메틸렌에테르글리콜을 사용하는 것이 특히 바람직하다.As the polyol (a2), for example, at least one polyol selected from the group consisting of low molecular weight polyols, polyester polyols, polycarbonate polyols, polyether polyols, polyester polyols, polybutadiene polyols and silicone polyols can be used. . Although the kind and quantity of these polyols are suitably selected according to the use used, it is preferable to use a polyether polyol from a viewpoint of hydrolysis resistance, and it is especially preferable to use polytetramethylene ether glycol. .

상기 저분자량 폴리올로서는, 예를 들면 에틸렌글리콜, 1,2-프로판디올, 1,3-프로판디올, 2-메틸-1,3-프로판디올, 2-부틸-2-에틸-1,3-프로판디올, 1,3-부탄디올, 1,4-부탄디올, 네오펜틸글리콜(2,2-디메틸-1,3-프로판디올), 2-이소프로필-1,4-부탄디올, 3-메틸-2,4-펜탄디올, 2,4-펜탄디올, 1,5-펜탄디올, 3-메틸-1,5-펜탄디올, 2-메틸-2,4-펜탄디올, 2,4-디메틸-1,5-펜탄디올, 2,4-디에틸-1,5-펜탄디올, 1,5-헥산디올, 1,6-헥산디올, 2-에틸-1,3-헥산디올, 2-에틸-1,6-헥산디올, 1,7-헵탄디올, 3,5-헵탄디올, 1,8-옥탄디올, 2-메틸-1,8-옥탄디올, 1,9-노난디올, 1,10-데칸디올 등의 지방족 디올; 시클로헥산디메탄올(예를 들면 1,4-시클로헥산디메탄올), 시클로헥산디올(예를 들면 1,3-시클로헥산디올, 1,4-시클로헥산디올), 2-비스(4-히드록시시클로헥실)-프로판 등의 지환식 디올; 트리메틸올에탄, 트리메틸올프로판, 헥시톨류, 펜티톨류, 글리세린, 폴리글리세린, 펜타에리트리톨, 디펜타에리트리톨, 테트라메틸올프로판 등의 3가 이상의 폴리올 등을 들 수 있다.Examples of the low molecular weight polyol include ethylene glycol, 1,2-propanediol, 1,3-propanediol, 2-methyl-1,3-propanediol, and 2-butyl-2-ethyl-1,3-propane Diol, 1,3-butanediol, 1,4-butanediol, neopentylglycol (2,2-dimethyl-1,3-propanediol), 2-isopropyl-1,4-butanediol, 3-methyl-2,4 -Pentanediol, 2,4-pentanediol, 1,5-pentanediol, 3-methyl-1,5-pentanediol, 2-methyl-2,4-pentanediol, 2,4-dimethyl-1,5- Pentanediol, 2,4-diethyl-1,5-pentanediol, 1,5-hexanediol, 1,6-hexanediol, 2-ethyl-1,3-hexanediol, 2-ethyl-1,6- Hexanediol, 1,7-heptanediol, 3,5-heptanediol, 1,8-octanediol, 2-methyl-1,8-octanediol, 1,9-nonanediol, 1,10-decanediol Aliphatic diols; Cyclohexanedimethanol (eg 1,4-cyclohexanedimethanol), cyclohexanediol (eg 1,3-cyclohexanediol, 1,4-cyclohexanediol), 2-bis (4-hydroxy Alicyclic diols such as cyclohexyl) -propane; Trivalent or more polyols, such as trimethylol ethane, trimethylol propane, hexitols, pentitols, glycerin, polyglycerol, pentaerythritol, dipentaerythritol, tetramethylolpropane, and the like.

상기 폴리에스테르폴리올로서는, 예를 들면 상기 저분자량 폴리올 등의 폴리올과, 다가 카르복시산, 다가 카르복시산의 에스테르 형성성 유도체(에스테르, 무수물, 할라이드 등), 락톤, 히드록시카르복시산 등과의 에스테르화물을 들 수 있다. 상기 다가 카르복시산으로서는, 예를 들면 옥살산, 말론산, 숙신산, 글루타르산, 아디프산, 피멜산, 수베르산, 아젤라산, 세바스산, 도데칸2산, 2-메틸숙신산, 2-메틸아디프산, 3-메틸아디프산, 3-메틸펜탄2산, 2-메틸옥탄2산, 3,8-디메틸데칸2산, 3,7-디메틸데칸2산, 지방족 디카르복시산(예를 들면 수첨 다이머산, 다이머산등), 방향족 디카르복시산(예를 들면 프탈산, 테레프탈산, 이소프탈산, 나프탈렌디카르복시산 등), 지환식 디카르복시산(예를 들면 시클로헥산디카르복시산 등), 트리카르복시산(예를 들면 트리멜리트산, 트리메스산, 피마자유 지방산의 3량체 등), 테트라카르복시산(예를 들면 피로멜리트산) 등을 들 수 있다. 상기 다가 카르복시산의 에스테르 형성성 유도체로서는, 예를 들면 산무수물, 할라이드(클로라이드, 브로마이드 등), 에스테르(예를 들면 메틸에스테르, 에틸에스테르, 프로필에스테르, 이소프로필에스테르, 부틸에스테르, 이소부틸에스테르, 아밀에스테르 등의 저급 지방족 에스테르) 등을 들 수 있다. 상기 락톤으로서는, 예를 들면 γ-카프로락톤, δ-카프로락톤, ε-카프로락톤, 디메틸-ε-카프로락톤, δ-발레로락톤, γ-발레로락톤, γ-부티로락톤 등을 들 수 있다. 또한, 상기 히드록시카르복시산은, 예를 들면 상기 락톤이 개환(開環)한 구조의 히드록시카르복시산이어도 된다.As said polyester polyol, esterified products of polyols, such as said low molecular weight polyol, and ester-forming derivatives (ester, anhydride, halide, etc.) of polyhydric carboxylic acid, polyhydric carboxylic acid, lactone, hydroxycarboxylic acid, etc. are mentioned, for example. . Examples of the polyhydric carboxylic acid include oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, dodecane diacid, 2-methyl succinic acid, and 2-methylamic acid. Dipic acid, 3-methyladipic acid, 3-methylpentane diacid, 2-methyloctane diacid, 3,8-dimethyldecane diacid, 3,7-dimethyldecane diacid, aliphatic dicarboxylic acid (e.g. hydrogenated Dimer acid, dimer acid, etc.), aromatic dicarboxylic acid (e.g., phthalic acid, terephthalic acid, isophthalic acid, naphthalenedicarboxylic acid, etc.), alicyclic dicarboxylic acid (e.g., cyclohexanedicarboxylic acid, etc.), tricarboxylic acid (e.g., tricarboxylic acid) Methalic acid, trimesic acid, trimer of castor oil fatty acid, etc.), tetracarboxylic acid (for example, pyromellitic acid), etc. are mentioned. As ester-forming derivatives of the polyhydric carboxylic acid, for example, acid anhydride, halide (chloride, bromide, etc.), ester (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, amyl) Lower aliphatic esters such as esters); and the like. Examples of the lactone include γ-caprolactone, δ-caprolactone, ε-caprolactone, dimethyl-ε-caprolactone, δ-valerolactone, γ-valerolactone, γ-butyrolactone, and the like. have. The hydroxycarboxylic acid may be, for example, a hydroxycarboxylic acid having a structure in which the lactone is ring-opened.

상기 폴리에테르폴리올로서는, 예를 들면 에틸렌옥사이드 부가물, 프로필렌옥사이드 부가물, 폴리테트라메틸렌글리콜, 상기 저분자 폴리올의 옥사이드 부가물 등을 들 수 있다. 상기 에틸렌옥사이드 부가물로서는, 예를 들면 디에틸렌글리콜, 트리에틸렌글리콜 등을 들 수 있고, 상기 프로필렌옥사이드 부가물로서는, 예를 들면 디프로필렌글리콜, 트리프로필렌글리콜 등을 들 수 있다. 상기 저분자 폴리올의 옥사이드 부가물로서는, 예를 들면 에틸렌옥사이드 부가물, 프로필렌옥사이드 부가물, 에틸렌옥사이드 및 프로필렌옥사이드 부가물 등을 들 수 있다.As said polyether polyol, an ethylene oxide addition product, a propylene oxide addition product, polytetramethylene glycol, the oxide addition product of the said low molecular polyol is mentioned, for example. As said ethylene oxide addition product, diethylene glycol, triethylene glycol, etc. are mentioned, for example, As said propylene oxide addition product, dipropylene glycol, tripropylene glycol, etc. are mentioned, for example. As an oxide adduct of the said low molecular polyol, an ethylene oxide adduct, a propylene oxide adduct, ethylene oxide, a propylene oxide adduct, etc. are mentioned, for example.

상기 폴리카보네이트폴리올로서는, 예를 들면 탄산에스테르 및/또는 포스겐과, 후술하는 폴리올을 반응시켜 얻어지는 것을 사용할 수 있다.As said polycarbonate polyol, what is obtained by making carbonate ester and / or phosgene react with the polyol mentioned later, for example can be used.

상기 탄산에스테르로서는, 예를 들면 메틸카보네이트나, 디메틸카보네이트, 에틸카보네이트, 디에틸카보네이트, 시클로카보네이트, 디페닐카보네이트 등을 들 수 있다.As said carbonate ester, methyl carbonate, dimethyl carbonate, ethyl carbonate, diethyl carbonate, cyclocarbonate, diphenyl carbonate, etc. are mentioned, for example.

또한, 상기 탄산에스테르나 포스겐과 반응할 수 있는 폴리올로서는, 예를 들면 에틸렌글리콜, 디에틸렌글리콜, 트리에틸렌글리콜, 테트라에틸렌글리콜, 1,2-프로판디올, 1,3-프로판디올, 디프로필렌글리콜, 트리프로필렌글리콜, 1,2-부탄디올, 1,3-부탄디올, 1,4-부탄디올, 2,3-부탄디올, 1,5-펜탄디올, 1,5-헥산디올, 1,6-헥산디올, 2,5-헥산디올, 1,7-헵탄디올, 1,8-옥탄디올, 1,9-노난디올, 1,10-데칸디올, 1,11-운데칸디올, 1,12-도데칸디올, 2-메틸-1,3-프로판디올, 네오펜틸글리콜, 2-부틸-2-에틸-1,3-프로판디올, 3-메틸-1,5-펜탄디올, 2-에틸-1,3-헥산디올, 2-메틸-1,8-옥탄디올, 1,4-시클로헥산디메탄올, 1,4-시클로헥산디메탄올, 하이드로퀴논, 레조르신, 비스페놀A, 비스페놀F, 4,4'-비페놀 등의 비교적 저분자량의 디히드록시 화합물이나, 폴리에틸렌글리콜, 폴리프로필렌글리콜, 폴리테트라메틸렌글리콜 등의 폴리에테르폴리올이나, 폴리헥사메틸렌아디페이트, 폴리헥사메틸렌숙시네이트, 폴리카프로락톤 등의 폴리에스테르폴리올 등을 들 수 있다.Moreover, as a polyol which can react with the said carbonate ester and phosgene, for example, ethylene glycol, diethylene glycol, triethylene glycol, tetraethylene glycol, 1,2-propanediol, 1,3-propanediol, dipropylene glycol , Tripropylene glycol, 1,2-butanediol, 1,3-butanediol, 1,4-butanediol, 2,3-butanediol, 1,5-pentanediol, 1,5-hexanediol, 1,6-hexanediol, 2,5-hexanediol, 1,7-heptanediol, 1,8-octanediol, 1,9-nonanediol, 1,10-decanediol, 1,11-undecanediol, 1,12-dodecanediol , 2-methyl-1,3-propanediol, neopentylglycol, 2-butyl-2-ethyl-1,3-propanediol, 3-methyl-1,5-pentanediol, 2-ethyl-1,3- Hexanediol, 2-methyl-1,8-octanediol, 1,4-cyclohexanedimethanol, 1,4-cyclohexanedimethanol, hydroquinone, resorcin, bisphenol A, bisphenol F, 4,4'-ratio Relatively low molecular weight dihydroxy compounds such as phenol, polyethylene glycol, polypropylene glycol, Polyether polyols, such as polytetramethylene glycol, Polyester polyols, such as polyhexamethylene adipate, polyhexamethylene succinate, and polycaprolactone, etc. are mentioned.

저분자량 폴리올을 제외하는 상기 폴리올(a2)의 수평균 분자량으로서는, 우레탄 수지의 우수한 강도 신도(伸度), 점탄성의 관점에서, 500~5,000의 범위인 것이 바람직하고, 특히 500~2,000의 범위가 바람직하다. 또한, 상기 폴리올(a2)의 수평균 분자량은, 수산기가, 산가로부터 구해지는 수평균 분자량을 나타낸다.As a number average molecular weight of the said polyol (a2) except a low molecular weight polyol, it is preferable that it is the range of 500-5,000 from a viewpoint of the outstanding strength elongation and viscoelasticity of a urethane resin, Especially the range of 500-2,000 is desirable. In addition, the number average molecular weight of the said polyol (a2) shows the number average molecular weight with which a hydroxyl value is calculated | required from an acid value.

수평균 분자량=(56,100×f)/(수산기가+산가)Number average molecular weight = (56,100 × f) / (hydroxyl value + acid value)

또한, f: 관능기수In addition, f: functional group

상기 프리폴리머(A)를 제조하는 방법은, 종래 공지의 방법을 사용할 수 있지만, 제조시에, 필요에 따라 3급 아민 촉매나 유기 금속계 촉매 등을 사용하여 반응을 촉진할 수 있다.Although the conventionally well-known method can be used for the method of manufacturing the said prepolymer (A), reaction can be accelerated | stimulated using a tertiary amine catalyst, an organometallic catalyst, etc. as needed at the time of manufacture.

상기 프리폴리머(A)의 이소시아네이트기 당량(NCO 당량)으로서는, 200~750g/eq.의 범위인 것이 바람직하고, 250~700g/eq.의 범위가 보다 바람직하다.As an isocyanate group equivalent (NCO equivalent) of the said prepolymer (A), it is preferable that it is the range of 200-750 g / eq., And the range of 250-700 g / eq. Is more preferable.

다음으로, 상기 경화제에 대해서 설명한다. 상기 경화제는, 필수 성분인 화합물(B)과 함께, 발포제인 물(D), 촉매(E) 및 정포제(F) 등을 함유해도 된다.Next, the said hardening | curing agent is demonstrated. The said hardening | curing agent may contain water (D), a catalyst (E), a foam stabilizer (F), etc. which are foaming agents with the compound (B) which is an essential component.

상기 화합물(B)은, 이소시아네이트기를 갖는 화합물에 대하여, 양호한 반응성을 갖는 관능기를 갖는 것이면 되고, 예를 들면 아민 화합물이나 폴리올류를 들 수 있다.The said compound (B) should just have a functional group which has favorable reactivity with respect to the compound which has an isocyanate group, For example, an amine compound and polyols are mentioned.

상기 아민 화합물로서는, 예를 들면 에틸렌디아민, 1,6-헥사메틸렌디아민, 피페라진, 2,5-디메틸피페라진, 이소포론디아민, 4,4'-디시클로헥실메탄디아민, 3,3'-디메틸-4,4'-디시클로헥실메탄디아민, 1,4-시클로헥산디아민, 1,2-프로판디아민, 디에틸렌트리아민, 트리에틸렌테트라민, 3,3'-디클로로-4,4'-디아미노디페닐메탄, 폴리아미노클로로페닐메탄 화합물, 판덱스 E-50(상표: DIC 가부시키가이샤제, 폴리아미노클로로페닐메탄 화합물) 등의 아민 화합물; 히드라진, 산히드라지드 등의 히드라진류 등을 들 수 있다.Examples of the amine compound include ethylenediamine, 1,6-hexamethylenediamine, piperazine, 2,5-dimethylpiperazine, isophoronediamine, 4,4'-dicyclohexylmethanediamine, 3,3'- Dimethyl-4,4'-dicyclohexylmethanediamine, 1,4-cyclohexanediamine, 1,2-propanediamine, diethylenetriamine, triethylenetetramine, 3,3'-dichloro-4,4'- Amine compounds such as diaminodiphenylmethane, polyaminochlorophenylmethane compound and Pandex E-50 (trademark: DIC Corporation, polyaminochlorophenylmethane compound); Hydrazines, such as hydrazine and sanhydrazide, are mentioned.

상기 폴리올류로서는, 상기한 폴리테트라메틸렌글리콜이나 폴리프로필렌글리콜 등의 폴리에테르폴리올, 폴리에스테르폴리올, 폴리카보네이트폴리올, 저분자량 폴리올 등을 들 수 있다.Examples of the polyols include polyether polyols such as polytetramethylene glycol and polypropylene glycol, polyester polyols, polycarbonate polyols, and low molecular weight polyols.

상기 화합물(B)은, 단독으로 사용해도 2종 이상을 병용해도 된다. 즉, 아민 화합물이 폴리올류에 용해한 것을 사용해도 된다. 상기 화합물(B)을 2종 이상 병용할 경우에는, 상기 주제와, 2종 이상의 화합물(B)을 함유하는 경화제의 2액계의 우레탄 수지 조성물로 해도 되고, 경화제를 2액 이상(예를 들면 화합물(B)과, 상기(B)는 다른 화합물(B))으로 나누어도 된다.The said compound (B) may be used independently or may use 2 or more types together. That is, you may use what the amine compound melt | dissolved in polyols. When using 2 or more types of said compounds (B) together, it is good also as a two-component urethane resin composition of the said main body and the hardening | curing agent containing 2 or more types of compounds (B), and hardening | curing agent 2 or more (for example, a compound) You may divide (B) and said (B) into another compound (B)).

상기 화합물(B)로서는, 상기한 중에서도, 폴리아미노클로로페닐메탄 화합물이 내(耐)열수성, 내마모성의 관점에서 바람직하고, 3,3'-디클로로-4,4'-디아미노디페닐메탄이 특히 바람직하다.As said compound (B), among the above-mentioned, a polyamino chlorophenylmethane compound is preferable from a viewpoint of hydrothermal resistance and abrasion resistance, and 3,3'- dichloro-4,4'- diamino diphenylmethane is Particularly preferred.

상기 화합물(B)의 사용량으로서는, 상기 프리폴리머(A) 100질량부에 대하여, 바람직하게는 15~80질량부의 범위이며, 보다 바람직하게는 20~60질량부의 범위이다.As the usage-amount of the said compound (B), Preferably it is the range of 15-80 mass parts with respect to 100 mass parts of said prepolymers (A), More preferably, it is the range of 20-60 mass parts.

또한, 상기 물(D)은, 수발포법에 있어서의 발포제의 역할을 하기 위해 배합하는 것이다. 물의 사용량으로서는, 상기 화합물(B) 100질량부에 대하여, 바람직하게는 0.05~3질량부의 범위이며, 보다 바람직하게는 0.5~2질량부의 범위이다.In addition, the said water (D) is mix | blended in order to play the role of a foaming agent in a water-foaming method. As the usage-amount of water, it is the range of 0.05-3 mass parts with respect to 100 mass parts of said compounds (B), More preferably, it is the range of 0.5-2 mass parts.

주제와 경화제를 혼합할 때의 상기 물(D)의 첨가 방법으로서는, 예를 들면 미리 경화제로서, 화합물(B)과 물(D)과 필요에 따라 촉매(E)나 정포제(F) 등의 첨가제를 가하여 혼합해 두고, 계속하여, 제1 성분(A)과 제2 성분((B)+(D)+그 밖의 첨가제)을 혼합하여, 발포, 경화시키는 방법이나, 예를 들면 화합물(B)의 융점이 100℃ 이상일 경우에는, 융점 100℃ 이하의 다른 화합물(B)에 물(D)과 필요에 따라 촉매(E)나 정포제(F) 등의 그 밖의 첨가제를 가하여 혼합해 두고, 계속하여, 제1 성분(A)과 제2 성분(B)과 제3 성분((B)+(D)+그 밖의 첨가제)을 혼합하여, 발포, 경화시키는 방법을 들 수 있다.As the addition method of the said water (D) at the time of mixing a main body and a hardening | curing agent, it is a compound (B), water (D), and a catalyst (E), a foaming agent (F), etc. as needed previously, as a hardening | curing agent, for example. The additive is added and mixed, and then the first component (A) and the second component ((B) + (D) + other additives) are mixed, foamed and cured, or a compound (B) In the case of melting point of 100 ° C. or higher, water (D) and other additives such as catalyst (E) and foam stabilizer (F) are added and mixed with other compounds (B) having a melting point of 100 ° C. or lower, Then, the method of mixing, foaming and hardening a 1st component (A), a 2nd component (B), and a 3rd component ((B) + (D) + other additive) is mentioned.

상기 촉매(E)로서는, 예를 들면 트리에틸렌디아민, N,N,N',N'-테트라메틸헥산디아민, N,N,N',N'-테트라메틸프로판디아민, N,N,N',N'',N''-펜타메틸디에틸렌트리아민, N,N',N'-트리메틸아미노에틸피페라진, N,N-디메틸시클로헥실아민, N,N,N',N'-테트라메틸에틸렌디아민, 비스(3-디메틸아미노프로필)-N,N-디메틸프로판디아민, N,N-디시클로헥실메틸아민, 비스(디메틸아미노에틸)에테르, N,N',N''-트리스(3-디메틸아미노프로필)헥사히드로-S-트리아진, N,N-디메틸벤질아민, N,N-디메틸아미노에톡시에톡시에탄올, N,N-디메틸아미노헥산올, N,N-디메틸아미노에톡시에탄올, N,N,N'-트리메틸아미노에틸에탄올아민, N,N,N'-트리메틸-2-히드록시에틸프로필렌디아민, 1-메틸이미다졸, 1-이소부틸-2-메틸이미다졸, 1,2-디메틸이미다졸, 디메틸에탄올아민, 트리에탄올아민 등의 아민계 촉매; 디부틸주석디라우레이트, 디옥틸틴디라우레이트, 옥틸산주석2-에틸헥산산, 옥틸산칼륨, 디부틸주석라우릴멜캅타이드, 비스무트트리스(2-에틸헥사노에이트) 등의 금속계 촉매 등을 들 수 있다. 이들 중에서도, 포화 특성이 강한 제3급 아민이 바람직하다.Examples of the catalyst (E) include triethylenediamine, N, N, N ', N'-tetramethylhexanediamine, N, N, N', N'-tetramethylpropanediamine, N, N, N ' , N '', N ''-pentamethyldiethylenetriamine, N, N ', N'-trimethylaminoethylpiperazine, N, N-dimethylcyclohexylamine, N, N, N', N'-tetra Methylethylenediamine, bis (3-dimethylaminopropyl) -N, N-dimethylpropanediamine, N, N-dicyclohexylmethylamine, bis (dimethylaminoethyl) ether, N, N ', N' '-tris ( 3-dimethylaminopropyl) hexahydro-S-triazine, N, N-dimethylbenzylamine, N, N-dimethylaminoethoxyethoxyethanol, N, N-dimethylaminohexanol, N, N-dimethylamino Methoxyethanol, N, N, N'-trimethylaminoethylethanolamine, N, N, N'-trimethyl-2-hydroxyethylpropylenediamine, 1-methylimidazole, 1-isobutyl-2-methylimida Amine catalysts such as sol, 1,2-dimethylimidazole, dimethylethanolamine and triethanolamine; Metal catalysts such as dibutyltin dilaurate, dioctyl tin dilaurate, tin octylate 2-ethylhexanoic acid, potassium octylate, dibutyltin laurylmelcaptide and bismuth tris (2-ethylhexanoate); Can be mentioned. Among these, tertiary amines with strong saturation characteristics are preferred.

상기 촉매(E)의 사용량은, 상기 화합물(B) 100질량부에 대하여, 바람직하게는 0.01~1.0질량부의 범위이며, 보다 바람직하게는 0.05~0.3질량부의 범위이다. 상기 촉매의 배합량이 이러한 범위이면, 연마 패드의 발포 상태가 보다 안정된다.The amount of the catalyst (E) used is preferably in the range of 0.01 to 1.0 parts by mass, and more preferably in the range of 0.05 to 0.3 parts by mass relative to 100 parts by mass of the compound (B). If the compounding quantity of the said catalyst is this range, the foaming state of a polishing pad will be more stable.

상기 정포제(F)로서는, 미세한 기포를 안정적으로 형성할 수 있는 것이면 되고, 실리콘계 계면 활성제가 바람직하게 사용된다. 상기 정포제(F)로서는, 예를 들면 「SZ-1919」, 「SH-192」, 「SH-190」, 「SZ-580」, 「SRX-280A」, 「SZ-1959」, 「SZ-1328E」, 「SF-2937F」, 「SF-2938F」, 「SZ-1671」, 「SH-193」, 「SZ-1923」(이상, 도레이·다우코닝 가부시키가이샤제) 등이 시판품으로서 입수할 수 있다.As said foam stabilizer (F), what is necessary is just to be able to form fine bubbles stably, and silicone type surfactant is used preferably. As said foam stabilizer (F), for example, "SZ-1919", "SH-192", "SH-190", "SZ-580", "SRX-280A", "SZ-1959", "SZ- 1328E "," SF-2937F "," SF-2938F "," SZ-1671 "," SH-193 "," SZ-1923 "(above, made by Toray Dow Corning Co., Ltd.), etc. are available as a commercial item. Can be.

다음으로, 상기 흄드 실리카(C)에 대해서 설명한다. 상기 흄드 실리카(C)는, 상기 주제 또는 상기 경화제 중 어느 쪽에 배합되어도 되지만, 배합량을 많이 넣을 수 있으므로, 배합비가 큰 상기 주제에 배합되어 있는 것이 보다 바람직하다.Next, the said fumed silica (C) is demonstrated. Although the said fumed silica (C) may be mix | blended with either the said main material or the said hardening | curing agent, since a compounding quantity can be put into many, it is more preferable to mix | blend with the said main material with a large compounding ratio.

상기 흄드 실리카(C)는, 비(非)변성의 흄드 실리카(친수성 실리카) 및 흄드 실리카의 입자 표면을, 각종 표면 처리제에 의해 소수(疎水) 변성한 소수성 흄드 실리카 중 어느 것이어도 된다. 이들 중에서도, 연마 특성을 보다 향상할 수 있는 점에서, 소수성 흄드 실리카를 사용하는 것이 바람직하다.The fumed silica (C) may be any of non-modified fumed silica (hydrophilic silica) and hydrophobic fumed silica in which the surface of particles of fumed silica is hydrophobically modified by various surface treatment agents. Among these, it is preferable to use hydrophobic fumed silica from the point which can improve a grinding | polishing characteristic further.

상기 흄드 실리카란, 건식법으로 얻어지는 것이며, 구체적으로는, 사염화규소를 기화하고, 고온의 염(炎) 중에서 가수 분해한 이산화규소이다. 단, 제조 공정에서는, 이들이 응집한 것이 형성된다.The said fumed silica is obtained by the dry method, and specifically, is silicon dioxide which vaporized silicon tetrachloride and hydrolyzed in high temperature salt. However, in the manufacturing process, what aggregated these is formed.

상기 응집한 이산화규소의 표면에는, 실록산 및 실라놀기가 존재하고 있으며, 친수성을 나타낸다. 한편, 이 실라놀기에 표면 처리제를 반응시킴으로써, 소수성이 부여된다. 또한, 본 발명에서 「소수성」이란, 상기 응집한 이산화규소의 표면에 존재하는 실록산 및 실라놀이, 상기 표면 처리제에 의해 15% 이상 반응한 것을 나타낸다. On the surface of the agglomerated silicon dioxide, siloxane and silanol groups exist and exhibit hydrophilicity. On the other hand, hydrophobicity is provided by making a surface treating agent react with this silanol group. In addition, in this invention, "hydrophobic" means having reacted 15% or more with the siloxane and silanol which exist in the surface of the said agglomerated silicon dioxide, and the said surface treating agent.

상기 표면 처리제로서는, 예를 들면 디메틸디클로로실란, 디메틸 실리콘 오일, 헥사메틸디실라잔, 옥틸실란, 헥사데실실란, 아미노실란, 메타크릴실란, 옥타메틸시클로테트라실록산, 폴리디메틸실록산 등의 실란 화합물을 들 수 있다.Examples of the surface treating agent include silane compounds such as dimethyldichlorosilane, dimethyl silicone oil, hexamethyldisilazane, octylsilane, hexadecylsilane, aminosilane, methacrylsilane, octamethylcyclotetrasiloxane, and polydimethylsiloxane. Can be mentioned.

또한, 상기 흄드 실리카(C)의 BET법에 의한 비표면적으로서는, 30~300㎡/g의 범위인 것이 바람직하고, 60~200㎡/g의 범위가 보다 바람직하며, 120~200㎡/g의 범위가 더 바람직하다.Moreover, as a specific surface area by the BET method of the said fumed silica (C), it is preferable that it is the range of 30-300 m <2> / g, The range of 60-200 m <2> / g is more preferable, It is 120-200 m <2> / g The range is more preferred.

상기 흄드 실리카(C)의 친수성 타입의 시판품으로서는, 「아에로질 50」, 「아에로질 90G」, 「아에로질 130」, 「아에로질 200」, 「아에로질 200CF」, 「아에로질 200V」, 「아에로질 300」, 「아에로질 300CF」(이상, 니혼아에로질 가부시키가이샤제) 등을 입수할 수 있다.As a commercial item of the said hydrophilic type of said fumed silica (C), "Aerosil 50", "Aerosil 90G", "Aerosil 130", "Aerosil 200", "Aerosil" 200CF "," Aerosil 200V "," Aerosil 300 "," Aerosil 300CF "(above, Nippon Aerosil Co., Ltd. product) etc. can be obtained.

또한, 소수성 타입의 시판품으로서는, 「아에로질 DT4」, 「아에로질 NA200Y」, 「아에로질 NA50H」, 「아에로질 NA50Y」, 「아에로질 NAX50」, 「아에로질 R104」, 「아에로질 R106」, 「아에로질 R202」, 「아에로질 R202W90」, 「아에로질 R504」, 「아에로질 R711」, 「아에로질 R700」, 「아에로질 R7200」, 「아에로질 R805」, 「아에로질 R805VV90」, 「아에로질 R812」, 「아에로질 812S」, 「아에로질 R816」, 「아에로질 R8200」, 「아에로질 R972」, 「아에로질 R972V」, 「아에로질 R974」, 「아에로질 RA200HS」, 「아에로질 RX200」, 「아에로질 RX300」, 「아에로질 RX50」, 「아에로질 RY200」, 「아에로질 RY200S」, 「아에로질 RY300」, 「아에로질 RY50」(이상, 니혼아에로질 가부시키가이샤제) 등을 입수할 수 있다.Moreover, as a commercial item of a hydrophobic type, "Aerosil DT4", "Aerosil NA200Y", "Aerosil NA50H", "Aerosil NA50Y", "Aerosil NAX50", "Ah" Aerosil R104 "," Aerosil R106 "," Aerosil R202 "," Aerosil R202W90 "," Aerosil R504 "," Aerosil R711 "," Aero Quality R700 "," Aerosil R7200 "," Aerosil R805 "," Aerosil R805VV90 "," Aerosil R812 "," Aerosil 812S "," Aerosil R816 " , "Aerosil R8200", "Aerosil R972", "Aerosil R972V", "Aerosil R974", "Aerosil RA200HS", "Aerosil RX200", `` Aerosil RX300 '', `` Aerosil RX50 '', `` Aerosil RY200 '', `` Aerosil RY200S '', `` Aerosil RY300 '', `` Aerosil RY50 '' (above, Nihon Aerosil Co., Ltd.) etc. can be obtained.

상기 흄드 실리카(C)의 사용량으로서는, 상기 우레탄 프리폴리머(A) 100질량부에 대하여, 0.5~2.0질량부의 범위인 것이, 액점도 및 연마 특성의 점에서 보다 바람직하다. 또한, 상기 범위이면, 상기 흄드 실리카(C)가 연속 기포에 기여하기 때문에, 얻어지는 폴리우레탄 연마 패드가 저(低)독립 기포율이 된다. 따라서, 폴리우레탄 연마 패드의 슬러리 유지력이 향상하고, 연마 특성이 향상한다.As the usage-amount of the said fumed silica (C), it is more preferable that it is the range of 0.5-2.0 mass parts with respect to 100 mass parts of said urethane prepolymers (A) from the point of a liquid viscosity and a grinding | polishing characteristic. In addition, since the said fumed silica (C) contributes to a continuous bubble in the said range, the polyurethane polishing pad obtained becomes a low independent bubble ratio. Therefore, the slurry holding force of a polyurethane polishing pad improves and polishing characteristics improve.

다음으로, 본 발명의 연마 패드용 우레탄 수지 조성물에 대해서 설명한다.Next, the urethane resin composition for polishing pads of this invention is demonstrated.

본 발명의 연마 패드용 우레탄 수지 조성물을 얻기 위한 상기 주제와 상기 경화제의 배합비, 즉, R값 [R]=〔화합물(B)과 물(D)을 함유한 경화제 중의 이소시아네이트기와 반응할 수 있는 기의 합계 몰수〕/〔주제인 프리폴리머(A) 중의 이소시아네이트기의 전 몰수〕는, 바람직하게는 0.7~1.1의 범위이며, 보다 바람직하게는 0.8~1.0의 범위이다.Compounding ratio of the above-mentioned main ingredient and the curing agent for obtaining the urethane resin composition for a polishing pad of the present invention, that is, the group capable of reacting with isocyanate groups in the curing agent containing R value [R] = [compound (B) and water (D) Total mole number] / [total number of moles of isocyanate groups in the prepolymer (A) which is the subject] becomes like this. Preferably it is the range of 0.7-1.1, More preferably, it is the range of 0.8-1.0.

본 발명의 연마 패드용 우레탄 수지 조성물, 산화 방지제, 탈포제, 자외선 흡수제, 지립, 충전제, 안료, 증점제, 난연제, 가소제, 활제(滑劑), 대전 방지제, 내열 안정제 등의 공지 관용의 첨가제를, 제조 공정의 어느 단계에서도 사용할 수 있다.Known conventional additives such as urethane resin compositions for polishing pads of the present invention, antioxidants, defoamers, ultraviolet absorbers, abrasive grains, fillers, pigments, thickeners, flame retardants, plasticizers, lubricants, antistatic agents, heat stabilizers, It can be used at any stage of the manufacturing process.

상기 충전재로서는, 예를 들면 탄산염, 규산, 규산염, 수산화물, 황산염, 붕산염, 티탄산염, 금속 산화물, 탄소물, 유기물 등을 들 수 있다.As said filler, a carbonate, a silicic acid, a silicate, a hydroxide, a sulfate, a borate, a titanate, a metal oxide, a carbon thing, an organic substance, etc. are mentioned, for example.

다음으로, 본 발명의 폴리우레탄 연마 패드, 및 그 제조 방법에 대해서 설명한다. 본 발명의 폴리우레탄 연마 패드는, 상기 연마 패드용 우레탄 수지 조성물 을 사용하여 얻어지는 것이며, 예를 들면 상기 연마 패드용 우레탄 수지 조성물에, 필요에 따라, 상기와 같은 첨가제를 가하여 혼합하고, 소정의 형상의 형(型) 내에 주입하여 발포, 경화시켜, 발포 성형물을 형으로부터 취출(取出)하고, 시트상(狀) 등의 적당한 형상으로 슬라이스 등 가공하여 얻을 수 있다.Next, the polyurethane polishing pad of the present invention and a manufacturing method thereof will be described. The polyurethane polishing pad of this invention is obtained using the said urethane resin composition for polishing pads, For example, it adds and mixes the above additives to the said urethane resin composition for polishing pads as needed, and it predetermined shape It can be injected into a mold, foamed and cured, and the foamed molded article can be taken out from the mold, and processed into slices or the like in a suitable shape such as a sheet.

본 발명의 폴리우레탄 연마 패드의 제조 방법으로서는, 상술한 수발포법 이외에도, 예를 들면 중공 비드를 첨가시키는 방법, 미캐니컬 프로스법(mechanical frothing), 혼합 챔버 내에 비반응성 기체를 도입 혼합시키는 기계 발포법, 화학적 발포법 등, 공지 관용의 방법을 채용할 수 있고, 특별히 제한하지 않는다.As the method for producing the polyurethane polishing pad of the present invention, in addition to the above-described water-foaming method, for example, a method of adding hollow beads, mechanical frothing, and a machine for introducing and mixing a non-reactive gas into a mixing chamber Known conventional methods such as foaming and chemical foaming can be employed, and are not particularly limited.

본 발명의 폴리우레탄 연마 패드의 제조 방법의 구체예로서는, 예를 들면 〔공정 1〕~〔공정 5〕를 포함하는 일련의 제조 방법을 들 수 있다.As a specific example of the manufacturing method of the polyurethane polishing pad of this invention, a series of manufacturing methods including [step 1]-[step 5] are mentioned, for example.

〔공정 1〕 주제(제1 성분)의 조제 공정[Step 1] Preparation Step of Main (First Component)

질소 도입관, 냉각 콘덴서, 온도계, 냉각기를 구비한 반응 장치에, 예를 들면 폴리이소시아네이트(a1)와 폴리올(a2)을 각각 투입하고, 질소 분위기 하에서 교반하면서, 바람직하게는 70~90℃의 범위, 보다 바람직하게는 75~85℃의 범위에서 반응시키고, 우레탄 프리폴리머(A)를 합성하여, 상기 우레탄 프리폴리머(A), 및 바람직하게는 흄드 실리카(C)를 함유하는 주제를 얻는다.For example, a polyisocyanate (a1) and a polyol (a2) are respectively added to a reactor equipped with a nitrogen inlet tube, a cooling condenser, a thermometer, and a cooler, and stirred under a nitrogen atmosphere, preferably in the range of 70 to 90 ° C. More preferably, it reacts in 75-85 degreeC, and synthesize | combines a urethane prepolymer (A), and obtains the main subject containing the said urethane prepolymer (A) and preferably fumed silica (C).

〔공정 2〕 주제와 경화제의 혼합 공정[Step 2] Mixing Step of Main Part and Curing Agent

계속하여, 상기 우레탄 프리폴리머(A)를 함유하는 주제(제1 성분)와, 화합물(B), 바람직하게는 물(D) 및 촉매(E)를 함유하는 경화제(제2 성분)를 혼합하여 교반하여 반응액으로 한다. 단, 화합물(B)의 융점이 100℃ 이상일 경우에는, 예를 들면 상기와는 다른 화합물(B)에 물(D) 및 촉매(E)를 용해시킨 제3 성분으로 하고, 제1 성분/제2 성분/제3 성분을 혼합하고 교반하여 반응액으로 해도 된다.Subsequently, the main body (first component) containing the urethane prepolymer (A) and the curing agent (second component) containing the compound (B), preferably water (D) and the catalyst (E) are mixed and stirred. To the reaction solution. However, when melting | fusing point of a compound (B) is 100 degreeC or more, it is set as the 3rd component which melt | dissolved water (D) and a catalyst (E) in the compound (B) different from the above, for example, 1st component / agent It is good also as a reaction liquid, mixing and stirring two components / 3rd components.

혼합시에는 우레탄 프리폴리머(A)를 함유하는 주제(제1 성분)와, 화합물(B)을 함유하는 경화제(제2 성분), 경우에 따라서는 상기 제3 성분을 혼합 주형기의 각각의 탱크에 넣어, 상기 우레탄 프리폴리머(A)를 함유하는 주제(제1 성분)를 바람직하게는 40~80℃로 가온하고, 상기 경화제(제2 성분)를 바람직하게는 40~120℃로 가온하고, 경우에 따라서는 제3 성분을 30~70℃로 가열하고, 각각을 혼합 주형기로 혼합한다.At the time of mixing, the main component (the first component) containing the urethane prepolymer (A) and the curing agent (the second component) containing the compound (B), and optionally the third component, are added to each tank of the mixing mold machine. The main component (first component) containing the urethane prepolymer (A) is preferably heated to 40 to 80 ° C, and the curing agent (second component) is preferably heated to 40 to 120 ° C, Therefore, the 3rd component is heated to 30-70 degreeC, and each is mixed with a mixing mold machine.

〔공정 3〕 주형 공정[Step 3] Molding Step

혼합 주형기로부터 토출한 상기 반응액을, 호스 등을 사용하여, 바람직하게는 40~120℃로 미리 가온한 형 내에 주입한다.The reaction liquid discharged from the mixing molder is injected into a mold which is preferably warmed to 40 to 120 ° C using a hose or the like.

〔공정 4〕 경화 공정[Step 4] Curing Step

형 내에 주입된 상태에서 반응액을 적절한 온도 범위(예를 들면 40~120℃의 범위)에서 가열 유지하고, 발포, 경화시켜, 바람직하게는 30분~2시간, 40~120℃의 금형 내에서 방치한 후, 당해 성형품을 취출하고, 바람직하게는 100~120℃, 8~17시간의 조건으로 애프터 큐어를 행하여, 성형품으로 한다.In the state injected into the mold, the reaction solution is heated and maintained in an appropriate temperature range (for example, in the range of 40 to 120 ° C), foamed and cured, and preferably in a mold of 40 to 120 ° C for 30 minutes to 2 hours. After leaving to stand, the molded article is taken out, preferably after cured under conditions of 100 to 120 ° C. for 8 to 17 hours to obtain a molded article.

〔공정 5〕 슬라이스 공정[Step 5] Slice Step

상기 성형품을 적절한 두께로 시트상으로 슬라이스한다. 슬라이스 후의 시트 두께는, 연마의 목적에 따라 설정하면 되고, 특별히 제한은 없지만, 예를 들면 0.6~2.0㎜의 범위가 바람직하다.The molded article is sliced into a sheet with an appropriate thickness. What is necessary is just to set the sheet thickness after slice according to the objective of grinding | polishing, Although there is no restriction | limiting in particular, For example, the range of 0.6-2.0 mm is preferable.

이상과 같이 하여 얻어진 폴리우레탄 연마 패드는, 예를 들면 양면 테이프로 정반(定盤)에 고정되고, 고정된 폴리우레탄 연마 패드를 정반과 함께 회전시켜, 그 위에 연마 지립을 함유한 연마 슬러리를 상시 공급하면서, 반도체 기판, 광학 기판, 자성(磁性) 기판 등을 폴리우레탄 연마 패드에 압부(押付)하여 연마가 행해진다.The polyurethane polishing pad obtained as described above is fixed to a surface plate with, for example, a double-sided tape, and the fixed polyurethane polishing pad is rotated together with the surface plate to always polish polishing slurry containing abrasive grains thereon. While supplying, a semiconductor substrate, an optical substrate, a magnetic substrate, etc. are pressed against a polyurethane polishing pad, and polishing is performed.

상기 지립으로서는, 콜로이달 실리카, 산화세륨, 산화지르코늄, 탄화규소, 알루미나 등을 들 수 있다.Examples of the abrasive include colloidal silica, cerium oxide, zirconium oxide, silicon carbide, alumina and the like.

(실시예)(Example)

이하, 본 발명을 실시예를 사용하여 보다 상세하게 설명한다.Hereinafter, the present invention will be described in more detail using examples.

[실시예 1] ≪폴리우레탄 연마 패드(P-1)의 제조≫Example 1 Manufacture of Polyurethane Polishing Pad (P-1)

질소 도입관, 냉각용 콘덴서, 온도계, 교반기를 구비한 4구 둥근바닥 플라스크에, 톨릴렌디이소시아네이트(「TDI-100」 니혼폴리우레탄고교 가부시키가이샤제) 37질량부를 투입하고, 교반을 개시했다. 계속하여, 폴리테트라메틸렌글리콜(수평균 분자량 1,000) 63질량부를 투입하고 혼합하여, 질소 기류 하 60℃에서 8시간 반응을 행하고, 이소시아네이트기 당량 335의 우레탄 프리폴리머(A-1)를 얻었다. 얻어진 우레탄 프리폴리머(A-1)에 친수성 실리카(상품명: 「레오로실 QS20L」, 비표면적=220㎡/g, 가부시키가이샤 토쿠야마제)를 1.25질량부 첨가하고, 디스퍼 분산기로 충분히 혼합하여, 제1 성분으로 했다. 얻어진 제1 성분의 이소시아네이트기 당량은 342였다.37 mass parts of tolylene diisocyanate ("TDI-100" Nippon Polyurethane Co., Ltd. product) was thrown into the four neck round bottom flask provided with the nitrogen inlet tube, the cooling condenser, the thermometer, and the stirrer, and stirring was started. Subsequently, 63 mass parts of polytetramethylene glycol (number average molecular weight 1,000) was thrown in, and it mixed, reaction was performed at 60 degreeC under nitrogen stream for 8 hours, and the urethane prepolymer (A-1) of isocyanate group equivalent 335 was obtained. To the obtained urethane prepolymer (A-1), 1.25 parts by mass of hydrophilic silica (brand name: "Leosilyl QS20L", specific surface area = 220 m 2 / g, manufactured by Tokuyama Co., Ltd.) was added thereto, and was sufficiently mixed with a disper disperser. , As the first component. The isocyanate group equivalent of the obtained 1st component was 342.

계속하여, 3,3'-디클로로-4,4'-디아미노페닐메탄(이하, 「MBOCA」라고 약기함)을 120℃에서 용융하고, 제2 성분으로 했다.Subsequently, 3,3'-dichloro-4,4'-diaminophenylmethane (hereinafter abbreviated as "MBOCA") was melted at 120 ° C to obtain a second component.

다음으로, 폴리프로필렌글리콜(이하, 「PPG」라고 약기함. 수평균 분자량 3,000, f=3) 100질량부와, 이온 교환수 7.0질량부, 비스(디메틸아미노에틸)에테르 0.5질량부 및 표면 장력 21.3mN/m(25℃)의 폴리에테르 변성 실리콘 정포제를 4질량부 배합하고, 충분히 교반 혼합하여 제3 성분으로 했다.Next, polypropylene glycol (hereinafter abbreviated as "PPG"). 100 parts by mass of number average molecular weight 3,000, f = 3, 7.0 parts by mass of ion-exchanged water, 0.5 parts by mass of bis (dimethylaminoethyl) ether and surface tension 4 mass parts of polyether modified silicone foam stabilizers of 21.3 mN / m (25 degreeC) were mix | blended, it was fully stirred and mixed, and it was set as the 3rd component.

다음으로, 믹싱형 엘라스토머 주형기(「EA-408형」 도호기카이고교 가부시키가이샤제)의 3개의 탱크에 상기 제1 성분, 제2 성분, 제3 성분을 각각 투입하고, 감압 탈포했다. 계속하여, 60℃로 온조(溫調)한 금형(안 치수 500×500×20㎜)에, R값=0.9가 되도록, 제1 성분/제2 성분/제3 성분=74.1/22.0/3.9(질량비)의 배합비로, 3350g(제1+제2+제3 성분)을 주입했다.Next, the said 1st component, the 2nd component, and the 3rd component were thrown into three tanks of the mixing type | mold elastomer casting machine (the "EA-408 type" Toho Kikai Kogyo Co., Ltd. make), and it degassed under reduced pressure. Subsequently, in the mold (inner dimensions 500 × 500 × 20 mm) warmed to 60 ° C., the first component / second component / third component = 74.1 / 22.0 / 3.9 3350 g (1st + 2nd + 3rd component) was injected | poured in the compounding ratio of mass ratio.

·토출량=7,500g/min(제1+제2+제3 성분)Discharge amount = 7,500 g / min (first + second + third component)

·믹서 회전수=3,500rpmMixer rotation speed = 3,500 rpm

·혼합 챔버 내 건조 공기 도입=무Introduction of dry air in the mixing chamber

그 후, 즉시, 금형의 덮개를 덮고, 60℃에서 30분 유지한 후, 성형품을 취출했다. 또한 얻어진 성형품을 110℃에서 16시간의 애프터 큐어를 행했다.Then, the molded article was taken out immediately after covering the cover of a metal mold | die and hold | maintaining at 60 degreeC for 30 minutes. Moreover, the obtained molded article was after-cure for 16 hours at 110 degreeC.

얻어진 성형품을 슬라이서로 두께 1.4㎜로 잘라내어, 시트상의 폴리우레탄 연마 패드(P-1)를 얻었다.The obtained molded article was cut out to thickness 1.4mm with the slicer, and the sheet-like polyurethane polishing pad (P-1) was obtained.

[실시예 3] ≪폴리우레탄 연마 패드(P-3)의 제조≫Example 3 Manufacture of Polyurethane Polishing Pad (P-3)

친수성 실리카(상품명: 「레오로실 QS20L」)를 디메틸 실리콘 오일에서 소수 변성한 흄드 실리카(상품명: 「아에로질 RY200S」, 비표면적=130㎡/g, 니혼아에로질 가부시키가이샤제)로 변경한 것 이외는, 실시예 1과 같이 하여 폴리우레탄 연마 패드(P-2)를 얻었다.Fumed silica hydrophobically modified with hydrophilic silica (brand name: "Leosilyl QS20L") in dimethyl silicone oil (brand name: "Aerosil RY200S", specific surface area = 130 m 2 / g, manufactured by Nippon Aerosil Co., Ltd.) Polyurethane polishing pad (P-2) was obtained like Example 1 except having changed to).

[비교예 1] ≪폴리우레탄 연마 패드(P'-1)의 제조≫Comparative Example 1 Manufacture of Polyurethane Polishing Pad (P′-1) ≫

제1 성분을 흄드 실리카를 도입하지 않고 우레탄 프리폴리머(A-1)로 하고, 배합비로서 제1 성분/제2 성분/제3 성분=73.7/22.3/3.9(질량비)로 한 것 이외는 실시예 1과 같이 하여 폴리우레탄 연마 패드(P'-1)를 얻었다.Example 1 except having made the 1st component into the urethane prepolymer (A-1) without introducing a fumed silica, and setting it as 1st component / 2nd component / 3rd component = 73.7 / 22.3 / 3.9 (mass ratio) as a compounding ratio. A polyurethane polishing pad (P'-1) was obtained in the same manner.

[프리폴리머(A)의 이소시아네이트기 당량(NCO 당량)의 측정 방법][Measurement Method for Isocyanate Group Equivalent (NCO Equivalent) in the Prepolymer (A)]

프리폴리머(A)의 NCO 당량의 측정은, JIS K 7301에 준거하여, 시료를 건조 톨루엔에 용해하고, 과잉의 디-n-부틸아민 용액을 가하여 반응시키고, 잔존하는 디-n-부틸아민을 염산 표준 용액으로 역적정(逆滴定)하여 구했다.The measurement of the NCO equivalent of a prepolymer (A) is based on JIS K 7301, The sample is melt | dissolved in dry toluene, an excess di-n-butylamine solution is added and reacted, and the remaining di-n-butylamine hydrochloric acid is carried out. It was calculated by reverse titration with a standard solution.

[수평균 분자량의 측정 방법][Measurement method of number average molecular weight]

실시예 및 비교예에서 사용한 폴리올의 수평균 분자량은, 이하와 같이 구했다.The number average molecular weight of the polyol used by the Example and the comparative example was calculated | required as follows.

수평균 분자량=(56,100×f)/(수산기가+산가)Number average molecular weight = (56,100 × f) / (hydroxyl value + acid value)

또한, f: 관능기수In addition, f: functional group

또한, 수산기가 및 산가의 측정 방법은, JIS K 1557에 준하여 측정했다.In addition, the measuring method of the hydroxyl value and the acid value was measured according to JISK1557.

[연마 패드 두께의 측정 방법][Measuring method of polishing pad thickness]

다이얼 게이지(유효 숫자: 0.01㎜)로 측정하고(n=8), 평균값을 연마 패드의 두께로 했다.It measured by the dial gauge (effective number: 0.01 mm) (n = 8), and made the average value into the thickness of a polishing pad.

[연마 패드의 밀도의 측정 방법][Measuring Method of Density of Polishing Pad]

길이(유효 숫자: 0.1㎜)를 메저(measure)로 (n=2), 두께를 (유효 숫자: 0.01㎜)를 다이얼 게이지로 (n=8), 중량 (유효 숫자: 0.01g)을 천칭(天秤)으로 (n=2) 측정하고, 하기 식에 의해 산출했다.Measure the length (significant number: 0.1 mm) to measure (n = 2), the thickness (significant number: 0.01 mm) to dial gauge (n = 8), and the weight (significant number: 0.01 g) It measured by (n = 2) and calculated by the following formula.

밀도(g/㎤)=평균 질량/(평균 길이 1×평균 길이 2×평균 두께)Density (g / cm 3) = average mass / (average length 1 x average length 2 x average thickness)

[연마 패드의 경도의 측정 방법][Measuring method of hardness of the polishing pad]

JIS A 7312에 준하여 측정했다.It measured according to JIS A 7312.

[연마 패드의 셀 평균경의 측정 방법][Measuring Method of Cell Average Diameter of Polishing Pad]

화상 해석 장치에 의해 셀경을 측정했다.The cell diameter was measured by the image analysis device.

장치: Pore Scan(Goldlucke제)Device: Pore Scan (made by Goldlucke)

조건: 포지션 12Condition: Position 12

Exposure: 1,000 Gain: 30Exposure: 1,000 Gain: 30

Threshould: AutoThreshould: Auto

5회 측정(배치 처리)5 measurements (batch processing)

300㎛2 이하는 카운트하지 않음300 μm 2 or less do not count

[거대 셀의 유무][With or without huge cell]

실시예 및 비교예에서 얻어진 폴리우레탄 연마 패드를 눈으로 보아 관찰하고, 거대 셀의 유무를 확인했다.The polyurethane polishing pad obtained in the Example and the comparative example was observed visually, and the presence or absence of the macro cell was confirmed.

또한, 직경이 1㎜ 이상의 셀이 폴리우레탄 연마 패드 위에 1개라도 존재할 경우에는 「있음」, 없을 경우에는 「없음」으로 표기했다.In addition, when there existed one cell of 1 mm or more in diameter on a polyurethane polishing pad, it represented with "Yes", and when there was not, it described as "None".

[연마 패드의 독립 기포율 측정 방법][Method for Measuring Independent Bubble Rate of Polishing Pad]

연마 패드로부터 38×250㎜로 2매 절취하고, 「공기식 겉보기 용적 측정기」(도쿄사이언스 가부시키가이샤제 공기 비교식 비중계 1000형)에 2매를 뭉쳐 투입하여 측정했다. ASTM D-2856에 준하여 측정했다.Two sheets of 38 × 250 mm were cut out from the polishing pad, and two sheets were put together and measured in an “air type apparent volumetric instrument” (1000 type air comparative-type hydrometer manufactured by Tokyo Science, Inc.). It measured according to ASTMD-2856.

[연마 레이트의 평가 방법][Evaluation method of polishing rate]

양면 테이프의 편면에 실시예 및 비교예에서 얻어진 폴리우레탄 연마 패드를 첩부(貼付)하고, 양면 테이프의 다른쪽 편면에 연마기의 정반을 첩부하여, 이하의 장치, 조건, 계산식으로 연마 레이트를 측정했다.The polyurethane polishing pads obtained in Examples and Comparative Examples were stuck to one side of the double-sided tape, and the surface plate of the polishing machine was stuck to the other side of the double-sided tape, and the polishing rate was measured by the following apparatus, conditions, and formula. .

연마기: FAM 18 GPAW(Speed Fam제 정반 직경=457.2㎜)Polishing machine: FAM 18 GPAW (Plated plate made by Speed Fam = 457.2 mm)

연마 조건:Polishing condition:

(패드 전처리) 패드 표면에 적색 연필로 2㎝ 간격으로 종횡으로 그린 선이 사라질 때까지, 다이아몬드 드레서(diamond dresser)로 드레스 처리(패드의 평탄화)를 행했다. 급수량 200ml/분(Pad pretreatment) The dressing process (flattening of the pad) was performed with the diamond dresser until the line | wire drawn on the pad surface disappeared vertically and horizontally by 2 cm interval. Water supply 200ml / min

(연마 대상) 단결정 실리콘 웨이퍼 4인치(102㎜ t=0.45㎜)(Polishing object) 4 inches of single crystal silicon wafers (102mm t = 0.45mm)

(슬러리) 콜로이달 실리카 용액 PH=11(실리카 농도=2%)(Slurry) colloidal silica solution PH = 11 (silica concentration = 2%)

(슬러리 유량) 60ml/분(Slurry flow rate) 60 ml / min

(정반 회전수) 50rpm(연회식(連回式))50 rpm (banquet type)

(연마 압력) 30㎪(Polishing pressure) 30㎪

(연마 시간) 20분(Polishing time) 20 minutes

(연마 레이트) 연마 전후의 폴리우레탄 연마 패드의 중량차로부터 산출했다. 즉,(Polishing rate) It calculated from the weight difference of the polyurethane polishing pad before and behind polishing. In other words,

연마 레이트(㎛/분)=(연마 전의 실리콘 웨이퍼의 중량(g)-연마 후의 실리콘 웨이퍼의 중량(g))×10000/(단결정 실리콘의 밀도(g/㎤)×실리콘 웨이퍼의 면적(c㎡)×연마 시간(분))Polishing rate (µm / min) = (weight of silicon wafer before polishing (g)-weight of silicon wafer after polishing (g)) x 10000 / (density of single crystal silicon (g / cm 3) x area of silicon wafer (cm 2) ) × Polishing time (minutes)

※ 단결정 실리콘의 밀도=2.329(g/㎤)※ Density of single crystal silicon = 2.329 (g / cm 3)

※ 실리콘 웨이퍼의 면적=20.4c㎡※ Area of silicon wafer = 20.4 c㎡

[스크래치의 평가 방법][Evaluation method of scratch]

상기 [연마 레이트의 평가 방법]으로 연마한 후의 실리콘 웨이퍼에 스크래치 흠집이 있는지의 여부를 눈으로 보아 관찰하고, 이하와 같이 평가했다.Whether the scratches were scratched on the silicon wafer after polishing by the above-mentioned [evaluation method of polishing rate] was visually observed and evaluated as follows.

스크래치 흠집이 없음: 「○」No scratch scratches: `` ○ ''

스크래치 흠집이 있음: 「×」Scratch scratches: `` × ''

[평탄성의 평가 방법][Evaluation method of flatness]

평탄성의 평가는, 상기 [연마 레이트의 평가 방법]으로 연마한 후의 단결정 실리콘 웨이퍼를 표면 거칠기계를 사용하여 측정했다.Evaluation of flatness measured the single crystal silicon wafer after grind | polishing by the said [evaluation method of a polishing rate] using the surface roughening machine.

장치: 폼 탈리서프(Form Talysurf) i120(Tayer Hobson제)Device: Form Talysurf i120 (by Taylor Hobson)

조건: 주사(走査) 스피드: 0.5㎜/분Condition: Scanning speed: 0.5 mm / minute

측정 부위: 직경 방향 102㎜ 중 99㎜를 평가Measurement site: 99 mm in 102 mm radial direction is evaluated

평가 기준: 고저차가 ±1.0㎛에 들어가는 선분의 길이가 90㎜ 이상인 것은 「○」로 평가함Evaluation Criteria: A line having a height difference of ± 1.0 µm having a length of 90 mm or more is evaluated as "○".

고저차가 ±1.0㎛에 들어가는 선분의 길이가 90㎜ 미만인 것은 「×」로 평가함A line segment having a height difference of ± 1.0 μm of less than 90 mm is evaluated as “×”.

[표 1][Table 1]

Figure pat00001
Figure pat00001

본 발명의 연마 패드용 우레탄 수지 조성물인 실시예 1 및 2는, 연마 레이트, 비스크래치성, 평탄성 모두 우수함을 알 수 있었다. 또한, 독립 기포율도 낮음을 알 수 있었다.It turned out that Example 1 and 2 which are the urethane resin compositions for polishing pads of this invention are excellent in all of a polishing rate, non-scratchability, and flatness. In addition, it was found that the independent bubble ratio was also low.

한편, 흄드 실리카(C)를 함유하지 않은 태양인 비교예 1은, 연마 레이트 및 평탄성이 불량이었다. 또한, 독립 기포율도 높음을 알 수 있었다.On the other hand, the comparative example 1 which is an aspect which does not contain a fumed silica (C) was bad in polishing rate and flatness. In addition, it was found that the independent bubble ratio was also high.

Claims (4)

이소시아네이트기를 갖는 우레탄 프리폴리머(A)를 함유하는 주제(主劑)와, 이소시아네이트기와 반응하는 관능기를 갖는 화합물(B)을 함유하는 경화제를 함유하는 연마 패드용 우레탄 수지 조성물에 있어서, 흄드 실리카(C)를 더 함유하는 것을 특징으로 하는 연마 패드용 우레탄 수지 조성물.In the urethane resin composition for a polishing pad containing the main body containing the urethane prepolymer (A) which has an isocyanate group, and the hardening | curing agent containing the compound (B) which has a functional group which reacts with an isocyanate group, Fumed silica (C) The urethane resin composition for a polishing pad further containing. 제1항에 있어서,
상기 흄드 실리카(C)의 사용량이, 상기 우레탄 프리폴리머(A) 100질량부에 대하여, 0.5~2질량부의 범위인 연마 패드용 우레탄 수지 조성물.
The method of claim 1,
The urethane resin composition for polishing pads whose usage-amount of the said fumed silica (C) is 0.5-2 mass parts with respect to 100 mass parts of said urethane prepolymers (A).
제1항 또는 제2항에 있어서,
상기 흄드 실리카(C)가, 소수성(疎水性) 흄드 실리카인 연마 패드용 우레탄 수지 조성물.
The method according to claim 1 or 2,
The urethane resin composition for a polishing pad, wherein the fumed silica (C) is hydrophobic fumed silica.
제1항 내지 제3항 중 어느 한 항에 기재된 연마 패드용 우레탄 수지 조성물을 사용하여 얻어진 폴리우레탄 연마 패드.The polyurethane polishing pad obtained using the urethane resin composition for polishing pads in any one of Claims 1-3.
KR1020120103093A 2011-10-19 2012-09-18 Urethane resin composition for polishing pad and polyurethane polishing pad KR20130043060A (en)

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