TW201641546A - Polishing pad and method of making the same - Google Patents

Polishing pad and method of making the same Download PDF

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TW201641546A
TW201641546A TW105110362A TW105110362A TW201641546A TW 201641546 A TW201641546 A TW 201641546A TW 105110362 A TW105110362 A TW 105110362A TW 105110362 A TW105110362 A TW 105110362A TW 201641546 A TW201641546 A TW 201641546A
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polishing pad
elastic modulus
compound
polishing
hollow body
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TW105110362A
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TWI767882B (en
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Hirohito Miyasaka
Teppei Tateno
Ryuma Matsuoka
Yoshie Kiraku
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Fujibo Holdings Inc
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  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
  • Polyurethanes Or Polyureas (AREA)

Abstract

This invention provides a polishing pad with excellent inhibition of polishing damage and excellent polishing processability and a method of making the same. The polishing pad is provided with polyurethane resin sheet. When being subject to test at a testing frequency of 10 rad/sec and tensile mode, the polyurethane resin sheet demonstrates a ratio (tan[delta] (25DEG C)) of less than 0.25 for the loss elastic modulus at 25DEG C E''(25DEG C ) relative to the storage elastic modulus E'(25DEG C), wherein the storage elastic modulus E' of the polyurethane resin sheet at 45-65DEG C is less than 200 MPa.

Description

研磨墊及其製造方法 Polishing pad and method of manufacturing same

本發明係關於一種研磨墊及其製造方法。尤其關於一種光學材料、半導體元件、硬碟、玻璃基板等化學機械研磨(CMP)加工用研磨墊及其製造方法。 The present invention relates to a polishing pad and a method of manufacturing the same. In particular, it relates to a polishing pad for chemical mechanical polishing (CMP) processing such as an optical material, a semiconductor element, a hard disk, or a glass substrate, and a method of manufacturing the same.

由於對光學材料、半導體元件、硬碟、玻璃基板等材料之表面要求平坦性,故而進行使用研磨墊之游離研磨粒方式之研磨。游離研磨粒方式係一面將包含研磨粒之漿料(研磨液)供給至研磨墊與被研磨物之間一面對被研磨物之加工面進行研磨加工之方法。 Since the surface of a material such as an optical material, a semiconductor element, a hard disk, or a glass substrate is required to be flat, polishing by a free abrasive grain method using a polishing pad is performed. The free abrasive grain method is a method in which a slurry (polishing liquid) containing abrasive grains is supplied to a polishing surface between the polishing pad and the workpiece to face the object to be polished.

對半導體元件用之研磨墊要求用於將研磨粒保持於該研磨墊表面之開孔、維持半導體元件表面之平坦性之剛性、防止半導體元件表面之刮痕之彈性。作為符合該等要求之研磨墊,一直利用具有利用胺基甲酸酯樹脂發泡體而製造之研磨層之研磨墊。 The polishing pad for a semiconductor element is required to have an opening for holding the abrasive grains on the surface of the polishing pad, to maintain the rigidity of the flatness of the surface of the semiconductor element, and to prevent the scratch of the surface of the semiconductor element. As a polishing pad that meets such requirements, a polishing pad having a polishing layer produced using a urethane resin foam has been used.

胺基甲酸酯樹脂發泡體通常係藉由包含含有聚胺基甲酸酯鍵之異氰酸酯化合物之預聚物與硬化劑之反應而硬化後成形(乾式法)。繼而,藉由將該發泡體切成片狀而形成研磨墊。以此方式利用乾式法所成形之具有硬質之研磨層之研磨墊(以下,有時簡稱為硬質(乾式)研磨墊)由於在胺基甲酸酯樹脂硬化成形時會於發泡體內部形成相對較小之大致球狀之氣泡,故而於藉由切片而形成之研磨墊之研磨表面形成能夠於研磨加工時保持漿料之開孔(開口)。 The urethane resin foam is usually formed by hardening by reacting a prepolymer containing a polyurethane bond-containing isocyanate compound with a hardener (dry method). Then, the polishing pad is formed by cutting the foam into a sheet shape. A polishing pad having a hard abrasive layer formed by a dry method in this manner (hereinafter sometimes referred to simply as a hard (dry) polishing pad) is formed in the inside of the foam during hardening of the urethane resin. The smaller, substantially spherical bubbles form an open surface (opening) that maintains the slurry during the grinding process on the abrasive surface of the polishing pad formed by slicing.

作為包含胺基甲酸酯樹脂發泡體之研磨墊,例如亦已知有 IC1000(註冊商標,NITTA HAAS公司製造)等研磨墊。又,已知有一種30℃之tanδ30之值為0.1以下且30℃之tanδ30與60℃之tanδ60之比(tanδ30/tanδ60)為1~2之研磨墊(專利文獻1)。 As a polishing pad containing a urethane resin foam, for example, it is also known A polishing pad such as IC1000 (registered trademark, manufactured by NITTA HAAS Co., Ltd.). Further, a polishing pad having a ratio of tan δ30 of 30 ° C of 0.1 or less and a ratio of tan δ 30 at 30 ° C to tan δ 60 of 60 ° C (tan δ 30 / tan δ 60 ) of 1 to 2 is known (Patent Document 1).

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2006-142439號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2006-142439

對研磨墊要求較高之研磨處理性、或研磨損傷之產生抑制等方面優異之研磨特性。 Excellent polishing properties such as high polishing treatment properties and suppression of polishing damage are required for the polishing pad.

然而,IC1000(註冊商標,NITTA HAAS公司製造)之研磨墊具有容易產生研磨損傷(刮痕)之問題點。 However, the polishing pad of IC1000 (registered trademark, manufactured by NITTA HAAS Co., Ltd.) has a problem that it is easy to cause abrasion damage (scratch).

又,專利文獻1之研磨墊由於tanδ30之值較低,故而研磨處理性(於研磨處理時,研磨墊之研磨表面因摩擦熱而變成25℃左右)優異,雖然如此,但由於tanδ60小於tanδ30,故而若於研磨加工時產生熱(於研磨加工時,研磨墊之研磨表面變成45℃~65℃左右),則變得難以軟化。因此,存在如下問題點:若於研磨時局部產生異物(研磨屑或研磨粒之凝聚物),則被研磨物容易產生研磨損傷。 Further, since the polishing pad of Patent Document 1 has a low value of tan δ30, the polishing processability (the polishing surface of the polishing pad is about 25° C. due to frictional heat during the polishing process) is excellent. However, since tan δ 60 is smaller than tan δ 30, Therefore, if heat is generated during the polishing process (the polishing surface of the polishing pad becomes about 45 ° C to 65 ° C during the polishing process), it becomes difficult to soften. Therefore, there is a problem in that if foreign matter (grinding debris or aggregates of abrasive grains) is locally generated during polishing, the object to be polished is liable to cause polishing damage.

因此,先前之研磨墊於研磨處理性及研磨損傷之產生抑制之任一方面均較差。因此,對於研磨處理性及研磨損傷之產生抑制之任一方面均優異之研磨墊存在較高需求。 Therefore, the prior polishing pad is inferior in any of the aspects of suppressing the abrasive treatment property and the grinding damage. Therefore, there is a high demand for a polishing pad which is excellent in any aspect of suppressing the polishing treatment property and the polishing damage.

本發明者係鑒於上述問題而完成者,目的在於利用研磨時之溫度與因研磨中之摩擦而引起之發熱時之溫度之不同而提供一種研磨處理性及研磨時之研磨損傷產生抑制性均優異之研磨墊及其製造方法。 The inventors of the present invention have achieved the above problems, and have an object of providing polishing treatment property and polishing damage resistance during polishing by using a temperature at the time of polishing and a temperature at the time of heat generation due to friction during polishing. A polishing pad and a method of manufacturing the same.

為了解決上述問題,本發明採用了以下構成。 In order to solve the above problems, the present invention adopts the following constitution.

[1]一種上述研磨墊,其係具備聚胺基甲酸酯樹脂薄片者,且於測定頻率10弧度/秒及拉伸模式下進行測定時,上述聚胺基甲酸酯樹脂薄片之25℃下之損失彈性模數E"(25℃)相對於儲存彈性模數E'(25℃)之比率(tanδ(25℃))為0.25以下,上述聚胺基甲酸酯樹脂薄片之45~65℃下之儲存彈性模數E'為200MPa以下。 [1] A polishing pad comprising a polyurethane resin sheet and 25 ° C of the polyurethane resin sheet when measured at a measurement frequency of 10 rad/sec and a tensile mode. The ratio of the loss elastic modulus E" (25 ° C) to the storage elastic modulus E' (25 ° C) (tan δ (25 ° C)) is 0.25 or less, and the above-mentioned polyurethane resin sheet is 45 to 65 The storage elastic modulus E' at ° C is 200 MPa or less.

[2]如[1]記載之研磨墊,其於測定頻率10弧度/秒及拉伸模式下進行測定時,上述聚胺基甲酸酯樹脂薄片之25℃下之損失彈性模數E"(25℃)相對於儲存彈性模數E'(25℃)之比率(tanδ(25℃))與65℃下之損失彈性模數E"(65℃)相對於儲存彈性模數E'(65℃)之比率(tanδ(65℃))之比即tanδ(25℃)/tanδ(65℃)為0.95以下。 [2] The polishing pad according to [1], wherein the polyurethane modulus resin has a loss elastic modulus E" at 25 ° C when measured at a measurement frequency of 10 rad/sec and a tensile mode. 25 ° C) ratio with respect to storage elastic modulus E' (25 ° C) (tan δ (25 ° C)) and loss elastic modulus E" (65 ° C) at 65 ° C with respect to storage elastic modulus E ' (65 ° C The ratio of the ratio (tan δ (65 ° C)), that is, tan δ (25 ° C) / tan δ (65 ° C) is 0.95 or less.

[3]如[1]或[2]記載之研磨墊,其於測定頻率10弧度/秒及拉伸模式下進行測定時,上述聚胺基甲酸酯樹脂薄片之65℃下之損失彈性模數E"(65℃)相對於儲存彈性模數E'(65℃)之比率(tanδ(65℃))為0.12~0.30之範圍內。 [3] The polishing pad according to [1] or [2], wherein the elastic modulus of the polyurethane resin sheet at 65 ° C is measured at a measurement frequency of 10 rad/sec and a tensile mode. The ratio of the number E" (65 ° C) to the storage elastic modulus E' (65 ° C) (tan δ (65 ° C)) is in the range of 0.12 to 0.30.

[4]如[1]~[3]中任一項記載之研磨墊,其至少包含1種中空體。 [4] The polishing pad according to any one of [1] to [3], which comprises at least one hollow body.

[5]如[4]記載之研磨墊,其中上述中空體包含平均粒徑5~60μm之第1中空體及平均粒徑70~150μm之第2中空體。 [5] The polishing pad according to [4], wherein the hollow body comprises a first hollow body having an average particle diameter of 5 to 60 μm and a second hollow body having an average particle diameter of 70 to 150 μm.

[6]一種如[1]~[5]中任一項記載之研磨墊之製造方法,其包含如下步驟:至少將作為預聚物之含有聚胺基甲酸酯鍵之異氰酸酯化合物(A)、硬化劑(D)、及中空體(E)進行混合,獲得成形體成形用混合液;及利用上述成形體成形用混合液成形聚胺基甲酸酯樹脂成形體 獲得聚胺基甲酸酯樹脂薄片;且上述硬化劑(D)包含選自由聚胺化合物(D-1)及多元醇化合物(D-2)所組成之群中之至少1種,且以上述聚胺基甲酸酯樹脂薄片之、硬化劑(D)中存在之活性氫基相對於存在於作為預聚物之含有聚胺基甲酸酯鍵之異氰酸酯化合物(A)之末端之異氰酸酯基的當量比即R值成為0.60~1.40之方式將各成分進行混合。 [6] The method for producing a polishing pad according to any one of [1] to [5] comprising the step of at least a polyurethane-containing isocyanate compound (A) as a prepolymer The mixture of the curing agent (D) and the hollow body (E) to obtain a mixed body for molding a molded article; and the molded article for forming a polyurethane resin by the mixed solution for forming the molded article Obtaining a sheet of a polyurethane resin; and the above curing agent (D) comprises at least one selected from the group consisting of a polyamine compound (D-1) and a polyol compound (D-2), and The active hydrogen group present in the hardener (D) of the polyurethane resin sheet relative to the isocyanate group present at the end of the polyurethane bond-containing isocyanate compound (A) as a prepolymer The components are mixed in such a manner that the equivalent ratio, that is, the R value is 0.60 to 1.40.

[7]如[6]記載之研磨墊之製造方法,其中上述中空體(E)包含平均粒徑5~60μm之第1中空體及平均粒徑70~150μm之第2中空體。 [7] The method for producing a polishing pad according to [6], wherein the hollow body (E) comprises a first hollow body having an average particle diameter of 5 to 60 μm and a second hollow body having an average particle diameter of 70 to 150 μm.

[8]如[6]或[7]記載之研磨墊之製造方法,其進而包含使聚異氰酸酯化合物(B)與多元醇化合物(C)進行反應而獲得作為預聚物之上述含有聚胺基甲酸酯鍵之異氰酸酯化合物(A)之步驟,且上述多元醇化合物(C)包含數量平均分子量600~1300之聚(氧四亞甲基)二醇。 [8] The method for producing a polishing pad according to [6] or [7], which further comprises reacting the polyisocyanate compound (B) with the polyol compound (C) to obtain the above-mentioned polyamine group as a prepolymer. A step of a formate bond-containing isocyanate compound (A), and the above polyol compound (C) comprises a poly(oxytetramethylene) glycol having a number average molecular weight of 600 to 1300.

根據本發明,能夠獲得研磨處理性及研磨損傷之產生抑制方面均優異之研磨墊。 According to the present invention, it is possible to obtain a polishing pad excellent in polishing treatment property and suppression of occurrence of polishing damage.

以下,對本實施方式進行說明。 Hereinafter, the present embodiment will be described.

<<研磨墊>> <<Grinding pad>>

本發明之研磨墊之特徵在於:其係具備聚胺基甲酸酯樹脂薄片者,且於測定頻率10弧度/秒及拉伸模式下進行測定時,上述聚胺基甲酸酯樹脂薄片之25℃下之損失彈性模數E"(25℃)相對於儲存彈性模數E'(25℃)之比率(tanδ(25℃))為0.25以下,上述聚胺基甲酸酯樹脂薄 片之45~65℃下之儲存彈性模數E'為200MPa以下。 The polishing pad of the present invention is characterized in that it is provided with a polyurethane resin sheet, and is measured at a measurement frequency of 10 rad/sec and in a tensile mode, and the above-mentioned polyurethane resin sheet is 25 The ratio of the loss elastic modulus E" (25 ° C) to the storage elastic modulus E' (25 ° C) at a temperature of ° C (tan δ (25 ° C)) is 0.25 or less, and the above-mentioned polyurethane resin is thin. The storage elastic modulus E' at 45 to 65 ° C of the sheet is 200 MPa or less.

上述聚胺基甲酸酯樹脂薄片意指分子內具有至少2個以上胺基甲酸酯鍵之薄片狀之樹脂。上述聚胺基甲酸酯樹脂薄片較佳為分子內具有至少2個以上之胺基甲酸酯鍵及至少2個以上脲鍵。本發明之聚胺基甲酸酯樹脂薄片及包含該樹脂薄片之研磨墊例如能夠根據後文所述之本發明之製造方法而製造。 The above-mentioned polyurethane resin sheet means a sheet-like resin having at least two or more urethane bonds in the molecule. The urethane resin sheet preferably has at least two or more urethane bonds and at least two or more urethane bonds in the molecule. The polyurethane resin sheet of the present invention and the polishing pad containing the resin sheet can be produced, for example, according to the production method of the present invention described later.

又,聚胺基甲酸酯樹脂薄片較佳為具有大致球狀之微小氣泡。所謂大致球狀,係意指利用乾式法而成形之成形體中存在之普通之氣泡形狀(具有各向同性,且為球狀、橢圓狀、或與該等相近之形狀)之概念,與利用濕式法而成形之成形體中所包含之氣泡形狀(具有各向異性,且具有直徑自研磨墊之研磨表面朝底部變大之構造)明確地區別。 Further, the polyurethane resin sheet preferably has minute bubbles which are substantially spherical. The term "substantially spherical" means the concept of ordinary bubble shapes (having isotropy, spherical, elliptical, or similar shapes) existing in a molded body formed by a dry method, and utilizing The shape of the bubble contained in the formed body formed by the wet method (having anisotropy and having a structure in which the diameter from the polishing surface of the polishing pad becomes larger toward the bottom) is clearly distinguished.

(儲存彈性模數E'及tanδ) (Storage elastic modulus E' and tan δ)

於本說明書及申請專利範圍中,所謂儲存彈性模數E',於對聚胺基甲酸酯樹脂薄片施加正弦性地產生變化之應力之情形時的、負荷週期之間可貯存且可回復之能量之尺度。又,所謂損失彈性模數E",係負荷週期之間所失去之(被消耗)能量之尺度。 In the scope of the present specification and the patent application, the storage elastic modulus E' can be stored and repliable between load cycles when a sinusoidal stress is applied to the polyurethane resin sheet. The scale of energy. Further, the loss elastic modulus E" is a measure of the energy lost (consumed) between load cycles.

於本說明書及申請專利範圍中,所謂tanδ,係損失彈性模數E"相對於儲存彈性模數E'之比率,係表示某種溫度條件下之黏性之程度之指標。 In the present specification and the scope of the patent application, the ratio of tan δ, the loss elastic modulus E" to the storage elastic modulus E', is an index indicating the degree of viscosity under a certain temperature condition.

儲存彈性模數E'及損失彈性模數E"分別係依據JIS K7244並於特定之溫度(℃)、測定頻率10弧度/秒、拉伸模式下之儲存彈性模數E'及損失彈性模數E"。 The storage elastic modulus E' and the loss elastic modulus E" are respectively based on JIS K7244 and at a specific temperature (°C), a measurement frequency of 10 rad/sec, a storage elastic modulus E' in a tensile mode, and a loss elastic modulus. E".

於本說明書及申請專利範圍中,有時將上述特定之溫度為25℃之情形之儲存彈性模數E'、損失彈性模數E"及tanδ分別記載為儲存彈性模數E'(25℃)、損失彈性模數E"(25℃)及tanδ(25℃)。又,於特定之 溫度為45℃、65℃之情形亦相同,有時記載為儲存彈性模數E'(45℃)、損失彈性模數E"(45℃)及tanδ(45℃)、以及儲存彈性模數E'(65℃)、損失彈性模數E"(65℃)及tanδ(65℃)。 In the present specification and the scope of the patent application, the storage elastic modulus E', the loss elastic modulus E", and tan δ in the case where the specific temperature is 25 ° C are sometimes described as the storage elastic modulus E' (25 ° C). Loss modulus E" (25 ° C) and tan δ (25 ° C). Also, in particular The same applies to the case where the temperature is 45 ° C and 65 ° C, and it is sometimes described as storage elastic modulus E' (45 ° C), loss elastic modulus E" (45 ° C) and tan δ (45 ° C), and storage elastic modulus E. '(65 ° C), loss elastic modulus E" (65 ° C) and tan δ (65 ° C).

本發明之研磨墊的於測定頻率10弧度/秒、拉伸模式下進行測定時之聚胺基甲酸酯樹脂薄片之25℃下之損失彈性模數E"(25℃)相對於儲存彈性模數E'(25℃)之比率(tanδ(25℃))為0.25以下。tanδ(25℃)較佳為0.01~0.25,更佳為0.05~0.23,進而更佳為0.08~0.22。若tanδ(25℃)為上述範圍內,則能夠使研磨墊之研磨處理性提昇。 The loss elastic modulus E" (25 ° C) at 25 ° C of the polyurethane sheet of the present invention measured at a measurement frequency of 10 rad/sec in a tensile mode with respect to the storage elastic modulus The ratio of the number E' (25 ° C) (tan δ (25 ° C)) is 0.25 or less. The tan δ (25 ° C) is preferably 0.01 to 0.25, more preferably 0.05 to 0.23, still more preferably 0.08 to 0.22. When 25 ° C) is in the above range, the polishing treatment property of the polishing pad can be improved.

又,本發明之研磨墊較佳為聚胺基甲酸酯樹脂薄片之65℃下之損失彈性模數E"(65℃)相對於儲存彈性模數E'(65℃)之比率(tanδ(65℃))為0.12~0.30之範圍內。tanδ(65℃)更佳為0.12~0.25之範圍內。 Further, the polishing pad of the present invention is preferably a ratio of the loss elastic modulus E" (65 ° C) to the storage elastic modulus E' (65 ° C) at 65 ° C of the polyurethane resin sheet (tan δ ( 65 ° C)) is in the range of 0.12 to 0.30, and tan δ (65 ° C) is more preferably in the range of 0.12 to 0.25.

本發明之研磨墊之聚胺基甲酸酯樹脂薄片之45~65℃下之儲存彈性模數E'為200MPa以下。45~65℃下之儲存彈性模數E'較佳為1~200MPa,更佳為10~180MPa,進而更佳為30~165MPa。 The storage modulus E' of the polyurethane resin sheet of the polishing pad of the present invention at 45 to 65 ° C is 200 MPa or less. The storage elastic modulus E' at 45 to 65 ° C is preferably from 1 to 200 MPa, more preferably from 10 to 180 MPa, and still more preferably from 30 to 165 MPa.

儲存彈性模數E'(45℃)為200MPa以下,較佳為1~200MPa,更佳為10~180MPa,進而更佳為30~165MPa,進而更佳為50~165MPa,進而更佳為70~165MPa。 The storage elastic modulus E' (45 ° C) is 200 MPa or less, preferably 1 to 200 MPa, more preferably 10 to 180 MPa, further preferably 30 to 165 MPa, more preferably 50 to 165 MPa, and even more preferably 70 to 70. 165 MPa.

65℃下之儲存彈性模數E'(65℃)為200MPa以下,較佳為1~200MPa,更佳為10~180MPa,進而更佳為30~165MPa,進而更佳為30~130MPa,進而更佳為30~100MPa。 The storage elastic modulus E' (65 ° C) at 65 ° C is 200 MPa or less, preferably 1 to 200 MPa, more preferably 10 to 180 MPa, still more preferably 30 to 165 MPa, and still more preferably 30 to 130 MPa, and further more Good for 30~100MPa.

若45℃~65℃下之儲存彈性模數E'為上述範圍內,則能夠充分抑制研磨損傷(刮痕)之產生。 When the storage elastic modulus E' at 45 ° C to 65 ° C is within the above range, the occurrence of polishing damage (scratches) can be sufficiently suppressed.

本發明之研磨墊較佳為聚胺基甲酸酯樹脂薄片之25℃下之損失彈性模數E"(25℃)相對於儲存彈性模數E'(25℃)之比率(tanδ(25℃))與65℃下之損失彈性模數E"(65℃)相對於儲存彈性模數E'(65℃)之比率(tanδ(65℃))之比即tanδ(25℃)/tanδ(65℃)為0.95以下。tanδ(25 ℃)/tanδ(65℃)較佳為0.50~0.95,更佳為0.65~0.95。 The polishing pad of the present invention preferably has a ratio of loss elastic modulus E" (25 ° C) to storage elastic modulus E' (25 ° C) at 25 ° C of the polyurethane resin sheet (tan δ (25 ° C) )) the ratio of the loss elastic modulus E" (65 ° C) at 65 ° C to the storage elastic modulus E' (65 ° C) ratio (tan δ (65 ° C)), that is, tan δ (25 ° C) / tan δ (65 °C) is 0.95 or less. Tanδ(25 °C)/tan δ (65 ° C) is preferably from 0.50 to 0.95, more preferably from 0.65 to 0.95.

若tanδ(25℃)/tanδ(65℃)為上述範圍內,則能夠使研磨墊之研磨處理性及研磨損傷(刮痕)之產生抑制方面提昇。 When tan δ (25 ° C) / tan δ (65 ° C) is in the above range, the polishing treatment property of the polishing pad and the occurrence of polishing damage (scratches) can be improved.

(中空體) (hollow body)

於本說明書及申請專利範圍中,所謂中空體,意指具有空隙之微小球體。 In the context of the present specification and the patent application, the term "hollow body" means a microsphere having a void.

本發明之研磨墊較佳為上述聚胺基甲酸酯樹脂薄片具有中空體。中空體較佳為平均粒徑5~150μm,更佳為10~140μm,進而更佳為15~130μm。 In the polishing pad of the present invention, it is preferable that the above-mentioned polyurethane resin sheet has a hollow body. The hollow body preferably has an average particle diameter of 5 to 150 μm, more preferably 10 to 140 μm, still more preferably 15 to 130 μm.

中空體可使用1種中空體,亦可將2種以上中空體組合使用。又,於將2種以上中空體組合使用之情形時,較佳為包含平均粒徑5~70μm之第1中空體、及平均粒徑70~150μm之第2中空體。第1中空體之平均粒徑更佳為10~55μm,進而更佳為15~50μm。第2中空體之平均粒徑更佳為80~140μm,進而更佳為90~130μm。 One type of hollow body may be used for the hollow body, or two or more types of hollow bodies may be used in combination. Further, when two or more kinds of hollow bodies are used in combination, it is preferable to include a first hollow body having an average particle diameter of 5 to 70 μm and a second hollow body having an average particle diameter of 70 to 150 μm. The average particle diameter of the first hollow body is more preferably from 10 to 55 μm, still more preferably from 15 to 50 μm. The average particle diameter of the second hollow body is more preferably from 80 to 140 μm, still more preferably from 90 to 130 μm.

由於藉由包含中空體,研磨加工時所產生之熱會集中於研磨表面附近,使研磨表面附近軟質化,故而即便於研磨加工時局部產生異物,亦不易產生研磨損傷。 Since the hollow body is included, the heat generated during the polishing process is concentrated in the vicinity of the polishing surface, and the vicinity of the polishing surface is softened. Therefore, even if foreign matter is locally generated during the polishing process, the polishing damage is less likely to occur.

(厚度) (thickness)

本發明之研磨墊之聚胺基甲酸酯樹脂薄片之厚度並無特別限制,例如可於0.5~3.0mm、較佳為0.5~1.5mm之範圍內使用。 The thickness of the urethane resin sheet of the polishing pad of the present invention is not particularly limited, and can be, for example, 0.5 to 3.0 mm, preferably 0.5 to 1.5 mm.

(聚胺基甲酸酯樹脂之構成成分) (Composition of polyurethane resin)

於本說明書及申請專利範圍中,所謂聚胺基甲酸酯樹脂之構成成分,意指藉由其後之聚合反應作為構成聚胺基甲酸酯樹脂之鏈之一部分而加入之聚胺基甲酸酯樹脂之原料成分。 In the present specification and the scope of the patent application, the constituent component of the polyurethane resin means a polyamine group which is added as a part of a chain constituting the polyurethane resin by a subsequent polymerization reaction. The raw material component of the acid ester resin.

作為構成本發明之研磨墊之聚胺基甲酸酯樹脂薄片之聚胺基甲酸酯樹脂之構成成分,可列舉聚胺基甲酸酯樹脂之原料成分,即聚異 氰酸酯成分、多元醇成分、及作為任意成分之聚胺成分。作為聚異氰酸酯成分,可列舉後文所述之(B)聚異氰酸酯化合物。作為多元醇化合物,可列舉可於(C)多元醇化合物及(D-2)預聚物合成後使用之多元醇化合物。作為聚胺成分,可列舉(D-1)聚胺化合物。 The constituent components of the polyurethane resin constituting the polyurethane resin sheet of the polishing pad of the present invention include the raw material components of the polyurethane resin, that is, the poly component A cyanate component, a polyol component, and a polyamine component as an optional component. The polyisocyanate component (B) polyisocyanate compound mentioned later is mentioned. The polyol compound may be a polyol compound which can be used after the synthesis of the (C) polyol compound and the (D-2) prepolymer. The polyamine component (D-1) is mentioned as a polyamine component.

本發明之研磨墊之聚胺基甲酸酯樹脂薄片較佳為包含數量平均分子量600~1300之聚(氧四亞甲基)二醇(PTMG)作為構成聚胺基甲酸酯樹脂之多元醇成分。聚(氧四亞甲基)二醇更佳為數量平均分子量為700~1100,進而更佳為800~1050。 The urethane resin sheet of the polishing pad of the present invention preferably comprises poly(oxytetramethylene) diol (PTMG) having a number average molecular weight of 600 to 1300 as a polyol constituting the polyurethane resin. ingredient. The poly(oxytetramethylene) glycol preferably has a number average molecular weight of from 700 to 1,100, and more preferably from 800 to 1,050.

本發明之研磨墊可較佳地用於矽、硬碟、玻璃基板、薄型液晶顯示器用母玻璃、半導體晶圓、半導體元件等之研磨,尤其是半導體元件之化學機械研磨(CMP)。 The polishing pad of the present invention can be preferably used for polishing of enamel, hard disk, glass substrate, mother glass for thin liquid crystal display, semiconductor wafer, semiconductor element, etc., especially chemical mechanical polishing (CMP) of semiconductor elements.

<<研磨墊之製造方法>> <<Method of manufacturing polishing pad>>

本發明之研磨墊例如可藉由本發明之製造方法而獲得。本發明之製造方法之特徵在於:其包含如下步驟:至少將作為預聚物之含有聚胺基甲酸酯鍵之異氰酸酯化合物(A)、硬化劑(D)、及中空體(E)進行混合,獲得成形體成形用混合液(混合步驟);及利用上述成形體成形用混合液成形聚胺基甲酸酯樹脂成形體,獲得聚胺基甲酸酯樹脂薄片(成形體成形步驟);且上述硬化劑(D)包含選自由聚胺化合物(D-1)及多元醇化合物(D-2)所組成之群中之至少1種,且以上述聚胺基甲酸酯樹脂薄片之、硬化劑(D)中存在之活性氫基相對於存在於作為預聚物之含有聚胺基甲酸酯鍵之異氰酸酯化合物(A)之末端之異氰酸酯基的當量比即R值成為0.60~1.40之方式將各成分進行混合。 The polishing pad of the present invention can be obtained, for example, by the production method of the present invention. The production method of the present invention is characterized in that it comprises the steps of mixing at least a polyurethane-containing isocyanate compound (A), a hardener (D), and a hollow body (E) as a prepolymer. And obtaining a mixture for forming a molded body (mixing step); and molding the polyurethane resin molded article by the mixed liquid for forming the molded body to obtain a polyurethane resin sheet (molded body forming step); The hardener (D) contains at least one selected from the group consisting of a polyamine compound (D-1) and a polyol compound (D-2), and is hardened by the above-mentioned polyurethane resin sheet. The equivalent ratio of the active hydrogen group present in the agent (D) to the isocyanate group at the terminal of the polyurethane bond-containing isocyanate compound (A) as the prepolymer, that is, the R value is 0.60 to 1.40. The ingredients were mixed.

以下,針對各步驟進行說明。 Hereinafter, each step will be described.

<混合步驟> <mixing step>

混合步驟係至少將含有聚胺基甲酸酯鍵之異氰酸酯化合物(A)、硬化劑(D)、中空體(E)進行混合作為聚胺基甲酸酯樹脂薄片之原料。 又,亦可於無損本發明之效果之範圍內合併使用上述以外之成分。 In the mixing step, at least a polyurethane bond-containing isocyanate compound (A), a curing agent (D), and a hollow body (E) are mixed as a raw material of the polyurethane resin sheet. Further, it is also possible to combine the components other than the above without departing from the effects of the present invention.

以下,針對各成分進行說明。 Hereinafter, each component will be described.

[(A)含有聚胺基甲酸酯鍵之異氰酸酯化合物] [(A) Isocyanate compound containing a polyurethane linkage]

作為預聚物之含有聚胺基甲酸酯鍵之異氰酸酯化合物(A)係藉由使下述聚異氰酸酯化合物(B)與多元醇化合物(C)於通常使用之條件下反應而獲得之化合物,且為分子內包含聚胺基甲酸酯鍵及異氰酸酯基者。又,亦可於無損本發明之效果之範圍內使其他成分包含於含有聚胺基甲酸酯鍵之異氰酸酯化合物中。 The isocyanate compound (A) containing a polyurethane linkage as a prepolymer is a compound obtained by reacting the following polyisocyanate compound (B) with a polyol compound (C) under usual use conditions, And it is a molecule containing a polyurethane bond and an isocyanate group in a molecule. Further, other components may be contained in the isocyanate compound containing a polyurethane bond within the range in which the effects of the present invention are not impaired.

作為含有聚胺基甲酸酯鍵之異氰酸酯化合物(A),可使用正在市售者,亦可使用使聚異氰酸酯化合物(B)與多元醇化合物(C)反應所合成者。對上述反應並無特別限制,於聚胺基甲酸酯樹脂之製造中使用公知之方法及條件進行加成聚合反應即可。例如可利用如下方法而製造:對加溫至40℃之多元醇化合物於氮環境下一面攪拌一面添加加溫至50℃之聚異氰酸酯化合物,於30分鐘後使其升溫直至80℃,進而於80℃下反應60分鐘。 As the isocyanate compound (A) containing a polyurethane bond, those which are commercially available or which are obtained by reacting a polyisocyanate compound (B) with a polyol compound (C) can be used. The above reaction is not particularly limited, and an addition polymerization reaction may be carried out by using a known method and conditions in the production of a polyurethane resin. For example, it can be produced by adding a polyisocyanate compound heated to 50 ° C while stirring a polyol compound heated to 40 ° C under a nitrogen atmosphere, and then raising the temperature to 80 ° C after 30 minutes, and further to 80 The reaction was carried out at ° C for 60 minutes.

[(B)聚異氰酸酯化合物] [(B) Polyisocyanate Compound]

於本說明書及申請專利範圍中,所謂聚異氰酸酯化合物,意指分子內具有2個以上異氰酸酯基之化合物。 In the specification and the patent application, the polyisocyanate compound means a compound having two or more isocyanate groups in the molecule.

作為聚異氰酸酯化合物(B),只要分子內具有2個以上異氰酸酯基,則並無特別限制。例如,作為分子內具有2個異氰酸酯基之二異氰酸酯化合物,可列舉:間苯二異氰酸酯、對苯二異氰酸酯、2,6-甲苯二異氰酸酯(2,6-TDI)、2,4-甲苯二異氰酸酯(2,4-TDI)、萘-1,4-二異氰酸酯、二苯甲烷-4,4'-二異氰酸酯(MDI)、4,4'-亞甲基-雙(環己基異氰酸酯)(氫化MDI)、3,3'-二甲氧基-4,4'-聯苯基二異氰酸酯、3,3'-二甲基二苯甲烷-4,4'-二異氰酸酯、苯二甲基-1,4-二異氰酸酯、4,4'-二苯基丙烷二異氰酸酯、三亞甲基二異氰酸酯、六亞甲基二異氰酸酯、伸丙 基-1,2-二異氰酸酯、伸丁基-1,2-二異氰酸酯、伸環己基-1,2-二異氰酸酯、伸環己基-1,4-二異氰酸酯、對苯二異硫氰酸酯、苯二甲基-1,4-二異硫氰酸酯、次乙基二異硫氰酸酯等。 The polyisocyanate compound (B) is not particularly limited as long as it has two or more isocyanate groups in the molecule. For example, examples of the diisocyanate compound having two isocyanate groups in the molecule include m-phenylene diisocyanate, p-phenylene diisocyanate, 2,6-toluene diisocyanate (2,6-TDI), and 2,4-toluene diisocyanate. (2,4-TDI), naphthalene-1,4-diisocyanate, diphenylmethane-4,4'-diisocyanate (MDI), 4,4'-methylene-bis(cyclohexyl isocyanate) (hydrogenated MDI , 3,3'-dimethoxy-4,4'-biphenyl diisocyanate, 3,3'-dimethyldiphenylmethane-4,4'-diisocyanate, benzenedimethyl-1, 4-diisocyanate, 4,4'-diphenylpropane diisocyanate, trimethylene diisocyanate, hexamethylene diisocyanate, propylene Base-1,2-diisocyanate, butyl-1,2-diisocyanate, cyclohexyl-1,2-diisocyanate, cyclohexyl-1,4-diisocyanate, p-phenylene isothiocyanate Benzyl-1,4-diisothiocyanate, hypoethyl diisothiocyanate, and the like.

作為聚異氰酸酯化合物,較佳為二異氰酸酯化合物,其中,更佳為2,4-TDI、2,6-TDI、MDI,尤佳為2,4-TDI、2,6-TDI。 The polyisocyanate compound is preferably a diisocyanate compound, more preferably 2,4-TDI, 2,6-TDI or MDI, and particularly preferably 2,4-TDI or 2,6-TDI.

該等聚異氰酸酯化合物(B)可單獨使用,亦可將複數個聚異氰酸酯化合物組合使用。 These polyisocyanate compounds (B) may be used singly or in combination of a plurality of polyisocyanate compounds.

[(C)多元醇化合物] [(C) Polyol Compound]

於本說明書及申請專利範圍中,所謂多元醇化合物,意指分子內具有2個以上醇性羥基(OH)之化合物。 In the specification and the patent application, the term "polyol compound" means a compound having two or more alcoholic hydroxyl groups (OH) in the molecule.

作為用於合成作為預聚物之含有聚胺基甲酸酯鍵之異氰酸酯化合物之多元醇化合物(C),可列舉:乙二醇、二乙二醇(DEG)、丁二醇等二醇化合物、三醇化合物等;聚(氧四亞甲基)二醇(或聚四亞甲基醚二醇)(PTMG)等聚醚多元醇化合物;乙二醇與己二酸之反應物或丁二醇與己二酸之反應物等聚酯多元醇化合物;聚碳酸酯多元醇化合物、聚己內酯多元醇化合物等。又,亦可使用加成有環氧乙烷之3官能性丙二醇。該等之中,較佳為PTMG、或PTMG與DEG之組合。PTMG之數量平均分子量(Mn)較佳為600~1300,更佳為700~1100,進而更佳為800~1050。數量平均分子量可藉由凝膠滲透層析法(Gel Permeation Chromatography:GPC)進行測定。再者,於利用聚胺基甲酸酯樹脂測定多元醇化合物之數量平均分子量之情形時,亦可藉由胺分解等常規方法將各成分分解之後藉由GPC進行推定。 Examples of the polyol compound (C) for synthesizing a polyurethane bond-containing isocyanate compound as a prepolymer include diol compounds such as ethylene glycol, diethylene glycol (DEG), and butylene glycol. a triol compound or the like; a polyether polyol compound such as poly(oxytetramethylene) glycol (or polytetramethylene ether glycol) (PTMG); a reaction product of ethylene glycol with adipic acid or dibutyl A polyester polyol compound such as a reactant of an alcohol and adipic acid; a polycarbonate polyol compound, a polycaprolactone polyol compound, or the like. Further, a trifunctional propylene glycol to which ethylene oxide is added may also be used. Among these, PTMG, or a combination of PTMG and DEG is preferred. The number average molecular weight (Mn) of the PTMG is preferably from 600 to 1300, more preferably from 700 to 1,100, and still more preferably from 800 to 1,050. The number average molecular weight can be determined by gel permeation chromatography (GPC). Further, when the number average molecular weight of the polyol compound is measured by a polyurethane resin, each component may be decomposed by a conventional method such as amine decomposition and then estimated by GPC.

上述第1多元醇化合物(C)可單獨使用,亦可將複數個多元醇化合物組合使用。 The first polyol compound (C) may be used singly or in combination of a plurality of polyol compounds.

(預聚物之NCO當量) (NCO equivalent of prepolymer)

又,利用“(聚異氰酸酯化合物(B)之質量份+多元醇化合物(C)之 質量份)/[(聚異氰酸酯化合物(B)1分子之官能基數×聚異氰酸酯化合物(B)之質量份/聚異氰酸酯化合物(B)之分子量)-(多元醇化合物(C)1分子之官能基數×多元醇化合物(C)之質量份/多元醇化合物(C)之分子量)]”所求出之預聚物之NCO當量表示1個NCO基之PP(預聚物)之分子量之數值。該NCO當量較佳為200~800,更佳為300~700,進而更佳為400~600。 Further, "(the mass of the polyisocyanate compound (B) + the polyol compound (C) is utilized" (parts by mass) / [(polyisocyanate compound (B) 1 molecule functional group × mass fraction of polyisocyanate compound (B) / molecular weight of polyisocyanate compound (B)) - (polyol compound (C) 1 molecule functional group × parts by mass of the polyol compound (C) / molecular weight of the polyol compound (C)) The NCO equivalent of the prepolymer obtained by the formula "] represents the molecular weight of the PP (prepolymer) of one NCO group. The NCO equivalent is preferably from 200 to 800, more preferably from 300 to 700, and even more preferably from 400 to 600.

[(D)硬化劑] [(D) hardener]

本發明之製造方法係於混合步驟中使硬化劑(亦稱為鏈伸長劑)與含有聚胺基甲酸酯鍵之異氰酸酯化合物等進行混合。藉由加入硬化劑,於其後之成形體成形步驟中,作為預聚物之含有聚胺基甲酸酯鍵之異氰酸酯化合物之主鏈末端與硬化劑鍵結而形成聚合物鏈,並進行硬化。 The production method of the present invention is a step of mixing a curing agent (also referred to as a chain extender) with an isocyanate compound containing a polyurethane bond in a mixing step. By adding a hardener, in the subsequent molding step of the shaped body, the main chain end of the polyisocyanate-containing isocyanate compound as a prepolymer is bonded to a hardener to form a polymer chain, and is hardened. .

作為硬化劑,例如可使用聚胺化合物(D-1)及/或多元醇化合物(D-2)。 As the hardener, for example, a polyamine compound (D-1) and/or a polyol compound (D-2) can be used.

((D-1)聚胺化合物) ((D-1) polyamine compound)

於本說明書及申請專利範圍中,所謂聚胺化合物,意指分子內具有2個以上胺基之化合物。 In the present specification and the scope of the patent application, the term "polyamine compound" means a compound having two or more amine groups in the molecule.

作為聚胺化合物(D-1),可使用脂肪族或芳香族之聚胺化合物,尤其是二胺化合物,例如可列舉:乙二胺、丙二胺、六亞甲基二胺、異佛爾酮二胺、二環己基甲烷-4,4'-二胺、3,3'-二氯-4,4'-二胺基二苯基甲烷(亦稱為亞甲基雙-鄰氯苯胺)(以下,簡記為MOCA)、具有與MOCA相同之結構之聚胺化合物等。又,聚胺化合物可具有羥基,作為此種胺系化合物,例如可列舉:2-羥乙基乙二胺、2-羥乙基丙二胺、二-2-羥乙基乙二胺、二-2-羥乙基丙二胺、2-羥丙基乙二胺、二-2-羥丙基乙二胺等。 As the polyamine compound (D-1), an aliphatic or aromatic polyamine compound, particularly a diamine compound, may be used, and examples thereof include ethylenediamine, propylenediamine, hexamethylenediamine, and isophor. Ketodiamine, dicyclohexylmethane-4,4'-diamine, 3,3'-dichloro-4,4'-diaminodiphenylmethane (also known as methylene bis-o-chloroaniline) (hereinafter, abbreviated as MOCA), a polyamine compound having the same structure as MOCA, and the like. Further, the polyamine compound may have a hydroxyl group, and examples of such an amine compound include 2-hydroxyethylethylenediamine, 2-hydroxyethylpropylenediamine, di-2-hydroxyethylethylenediamine, and 2-hydroxyethyl propylene diamine, 2-hydroxypropyl ethylene diamine, di-2-hydroxypropyl ethylene diamine, and the like.

作為聚胺化合物,較佳為二胺化合物,更佳為MOCA、二胺基二 苯基甲烷、二胺基二苯基碸,尤佳為MOCA。 As the polyamine compound, a diamine compound is preferred, and more preferably MOCA, diamine II Phenylmethane, diaminodiphenylphosphonium, and more preferably MOCA.

聚胺化合物(D-1)可單獨使用,亦可將複數個聚胺化合物(D-1)組合使用。 The polyamine compound (D-1) may be used singly or in combination of a plurality of polyamine compounds (D-1).

作為聚胺化合物(D-1),為了使其容易與其他成分混合及/或使後續之成形體形成步驟中之氣泡直徑之均一性提昇,較佳為視需要於已加熱之狀態下於減壓下進行消泡。作為於減壓下之消泡方法,使用於聚胺基甲酸酯之製造中公知之方法即可,例如可使用真空泵於0.1MPa以下之真空度下進行消泡。 As the polyamine compound (D-1), in order to make it easy to mix with other components and/or to improve the uniformity of the bubble diameter in the subsequent formed body forming step, it is preferred to reduce it as needed in the heated state. Depressurize by pressing. The defoaming method under reduced pressure may be a method known in the production of polyurethane, and for example, defoaming may be performed using a vacuum pump at a vacuum of 0.1 MPa or less.

於使用固體之化合物作為硬化劑(鏈伸長劑)之情形時,可一面藉由加熱使其熔融,一面於減壓下進行消泡。 When a solid compound is used as a curing agent (chain extender), it can be defoamed under reduced pressure while being melted by heating.

(可於(D-2)預聚物合成後使用之多元醇化合物) (Polyol compound which can be used after (D-2) prepolymer synthesis)

又,於本發明中,除用以形成作為上述預聚物之異氰酸酯基含有化合物之多元醇化合物(C)以外,可另外使用多元醇化合物(D-2)作為硬化劑。 Further, in the present invention, in addition to the polyol compound (C) for forming an isocyanate group-containing compound as the prepolymer, a polyol compound (D-2) may be additionally used as a curing agent.

作為該多元醇化合物(D-2),只要為二醇化合物或三醇化合物等化合物,則可無特別限制地使用。又,可與用以形成預聚物之多元醇化合物(C)相同,亦可不同。 The polyol compound (D-2) can be used without particular limitation as long as it is a compound such as a diol compound or a triol compound. Further, it may be the same as or different from the polyol compound (C) for forming the prepolymer.

作為具體例,可列舉:乙二醇、二乙二醇、三乙二醇、1,2-丙二醇、1,3-丙二醇、1,3-丁二醇、1,4-丁二醇、新戊二醇、戊二醇、3-甲基-1,5-戊二醇、1,6-己二醇等低分子量二醇、聚(氧四亞甲基)二醇、聚乙二醇、聚丙二醇等高分子量之多元醇化合物等。 Specific examples thereof include ethylene glycol, diethylene glycol, triethylene glycol, 1,2-propylene glycol, 1,3-propanediol, 1,3-butylene glycol, and 1,4-butanediol. Low molecular weight diol such as pentanediol, pentanediol, 3-methyl-1,5-pentanediol, 1,6-hexanediol, poly(oxytetramethylene) glycol, polyethylene glycol, A high molecular weight polyol compound such as polypropylene glycol or the like.

上述多元醇化合物(D-2)可單獨使用,亦可將複數個多元醇化合物(D-2)組合使用。 The above polyol compound (D-2) may be used singly or in combination of a plurality of polyol compounds (D-2).

作為硬化劑(D),可使用聚胺化合物(D-1),亦可使用多元醇化合物(D-2),還可使用該等之混合物。其中,較佳為使用聚胺化合物(D-1)。 As the hardener (D), a polyamine compound (D-1) can be used, and a polyol compound (D-2) can also be used, and a mixture of these can also be used. Among them, the polyamine compound (D-1) is preferably used.

(R值) (R value)

本發明之研磨墊之製造方法中,以硬化劑(D)中存在之活性氫基(胺基及羥基)相對於存在於作為預聚物之含有聚胺基甲酸酯鍵之異氰酸酯化合物(A)之末端之異氰酸酯基之當量比即R值成為0.60~1.40之方式將各成分進行混合。R值較佳為0.65~0.1.30,更佳為0.70~1.20。 In the method for producing a polishing pad of the present invention, the active hydrogen group (amine group and hydroxyl group) present in the curing agent (D) is relative to the isocyanate compound (A) present in the polyurethane-containing bond as a prepolymer. The component is mixed so that the equivalent ratio of the isocyanate groups at the end thereof is, that is, the R value is 0.60 to 1.40. The R value is preferably from 0.65 to 0.1.30, more preferably from 0.70 to 1.20.

[(E)中空體] [(E) hollow body]

於本發明之研磨墊製造方法中,使用中空體(E)使聚胺基甲酸酯樹脂成形體內部含有氣泡。 In the method for producing a polishing pad of the present invention, the hollow body (E) is used to contain bubbles in the interior of the polyurethane resin molded body.

所謂中空體,意指具有空隙之微小球體。微小球體中包含球狀、橢圓狀、及與該等相近之形狀者。作為中空體之例,可列舉使由包含熱塑性樹脂之外殼(聚合物殼)與外殼內包含之低沸點烴所構成之未發泡之加熱膨脹性微球狀體加熱膨脹而成者。 The term "hollow body" means a microsphere having a void. The microspheres include a spherical shape, an elliptical shape, and a shape similar to the above. Examples of the hollow body include heating and expansion of an unfoamed heat-expandable microsphere composed of a shell (polymer shell) containing a thermoplastic resin and a low-boiling hydrocarbon contained in the shell.

作為上述聚合物殼,如日本專利特開昭57-137323號公報等所揭示般,例如可使用:丙烯腈-偏二氯乙烯共聚物、丙烯腈-甲基丙烯酸甲酯共聚物、氯乙烯-乙烯共聚物等熱塑性樹脂。同樣,作為聚合物殼內包含之低沸點烴,例如可使用異丁烷、戊烷、異戊烷、石油醚等。 As the polymer shell, as disclosed in Japanese Laid-Open Patent Publication No. SHO 57-137323, for example, an acrylonitrile-vinylidene chloride copolymer, an acrylonitrile-methyl methacrylate copolymer, or a vinyl chloride- A thermoplastic resin such as an ethylene copolymer. Also, as the low boiling point hydrocarbon contained in the polymer shell, for example, isobutane, pentane, isopentane, petroleum ether or the like can be used.

本發明之研磨墊之製造方法中,較佳為使用平均粒徑5~150μm之中空體(E),更佳為使用10~140μm之中空體(E),進而更佳為使用15~130μm之中空體(E)。 In the method for producing a polishing pad of the present invention, it is preferred to use a hollow body (E) having an average particle diameter of 5 to 150 μm, more preferably a hollow body (E) of 10 to 140 μm, and more preferably 15 to 130 μm. Hollow body (E).

又,於使用2種中空體之情形時,第1中空體較佳為平均粒徑5~60μm,更佳為10~55μm,進而更佳為15~50μm。第2中空體較佳為平均粒徑70~150μm,更佳為80~140μm,進而更佳為90~130μm。 Further, in the case of using two types of hollow bodies, the first hollow body preferably has an average particle diameter of 5 to 60 μm, more preferably 10 to 55 μm, still more preferably 15 to 50 μm. The second hollow body preferably has an average particle diameter of 70 to 150 μm, more preferably 80 to 140 μm, still more preferably 90 to 130 μm.

作為第1中空體之例,可列舉EXPANCEL461DE20d70(EXPANCEL公司製造)(偏二氯乙烯-丙烯腈系之外殼組成且平均粒經 為15~25μm、密度為70±6kg/m3之已膨脹之微小中空球狀體)、EXPANCEL551DE20d42(EXPANCEL公司製造)(偏二氯乙烯-丙烯腈系之外殼組成且平均粒徑為30~50μm、密度為42±4kg/m3之已膨脹之微小中空球狀體)。 Examples of the first hollow body include EXPANCEL 461DE20d70 (manufactured by EXPANCEL) (the outer structure of a vinylidene chloride-acrylonitrile-based outer casing and an average particle diameter of 15 to 25 μm and a density of 70 ± 6 kg/m 3 . Hollow spherical body), EXPANCEL551DE20d42 (manufactured by EXPANCEL) (expanded micro hollow spheroids composed of a vinylidene chloride-acrylonitrile-based outer shell and having an average particle diameter of 30 to 50 μm and a density of 42 ± 4 kg/m 3 ).

作為第2中空體之例,可列舉Matsumoto Microsphere F-80DE(松本油脂製藥(股)製造)(丙烯腈系之外殼組成且平均粒徑為90~130μm、密度25±5kg/m3之已膨脹之微小中空球狀體)。 Examples of the second hollow body include Matsumoto Microsphere F-80DE (manufactured by Matsumoto Oil & Fats Co., Ltd.) (acrylonitrile-based outer shell composition and an average particle diameter of 90 to 130 μm and a density of 25 ± 5 kg/m 3 . Tiny hollow spheroids).

再者,平均粒徑可藉由雷射繞射式粒度分佈測定裝置(例如spectris(股)製造,Mastersizer 2000)進行測定。 Further, the average particle diameter can be measured by a laser diffraction type particle size distribution measuring apparatus (for example, manufactured by Spectris, Mastersizer 2000).

中空體(E)較佳為預聚物每1000質量份包含10~40質量份,更佳為包含15~30質量份。 The hollow body (E) preferably contains the prepolymer in an amount of 10 to 40 parts by mass, more preferably 15 to 30 parts by mass per 1000 parts by mass.

又,於中空體(E)具有第1中空體及第2中空體之情形時,第1中空體與第2中空體之質量比較佳為10:90~90:10,更佳為30:70~90:10,進而更佳為40:60~90:10,進而更佳為50:50~80:20。 Further, when the hollow body (E) has the first hollow body and the second hollow body, the mass of the first hollow body and the second hollow body is preferably 10:90 to 90:10, more preferably 30:70. ~90:10, and more preferably 40:60~90:10, and even more preferably 50:50~80:20.

又,除上述成分以外,可於無損本發明之效果之範圍內將先前使用之發泡劑與上述微小中空球體併用,亦可於下述混合步驟中對上述各成分吹入非反應性之氣體。作為該發泡劑,可列舉以水、或碳數5或6之烴為主成分之發泡劑。作為該烴,例如可列舉正戊烷、正己烷等鏈狀烴、或環戊烷、環己烷等脂環式烴。 Further, in addition to the above components, the previously used foaming agent may be used in combination with the above-mentioned micro hollow spheres insofar as the effects of the present invention are not impaired, and a non-reactive gas may be blown into the above components in the following mixing step. . The foaming agent may, for example, be a foaming agent containing water or a hydrocarbon having 5 or 6 carbon atoms as a main component. Examples of the hydrocarbon include a chain hydrocarbon such as n-pentane or n-hexane, or an alicyclic hydrocarbon such as cyclopentane or cyclohexane.

又,除上述各成分以外,亦可添加公知之泡沫穩定劑、阻燃劑、著色劑、塑化劑等。 Further, in addition to the above components, a known foam stabilizer, a flame retardant, a colorant, a plasticizer or the like may be added.

混合步驟係至少將作為預聚物之含有聚胺基甲酸酯鍵之異氰酸酯化合物(A)、硬化劑(D)及中空體(E)供給至混合機內進行攪拌、混合。對混合順序並無特別限制,較佳為準備將含有聚胺基甲酸酯鍵之異氰酸酯化合物(A)與中空體(E)進行混合而成之混合液、及將硬化劑(D)及視需要之其他成分進行混合而成之混合液,並將兩混合液供給 至混合器內進行混合攪拌。如此,得以製備成形體成形用之混合液。混合步驟係於加溫至能夠確保上述各成分之流動性之溫度之狀態下進行。 In the mixing step, at least a polyurethane-containing isocyanate compound (A), a curing agent (D), and a hollow body (E) as a prepolymer are supplied to a mixer, stirred, and mixed. The mixing order is not particularly limited, and a mixture of an isocyanate compound (A) containing a polyurethane bond and a hollow body (E), and a hardener (D) and a view are preferably used. a mixture of other ingredients that are required to be mixed, and the two mixtures are supplied Mix and stir into the mixer. Thus, a mixed liquid for molding a shaped body can be prepared. The mixing step is carried out while heating to a temperature at which the fluidity of each of the above components can be ensured.

例如可將包含上述中空體(E)之加溫至40~80℃之預聚物(含有聚胺基甲酸酯鍵之異氰酸酯)溶液、及加溫至80~130℃之硬化劑(D)投入至混合機進行攪拌。攪拌時間根據混合機之齒數或轉數、間隙等進行適當調整,例如為0.5~4秒。 For example, a prepolymer (isocyanate containing a polyurethane bond) solution containing the above hollow body (E) heated to 40 to 80 ° C, and a hardener (D) heated to 80 to 130 ° C can be used. Put in a mixer and stir. The stirring time is appropriately adjusted according to the number of teeth, the number of revolutions, the gap, and the like of the mixer, for example, 0.5 to 4 seconds.

<成形體成形步驟> <Forming body forming step>

成形體成形步驟係藉由使於上述混合步驟中所製備之成形體成形用混合液流入至50~100℃之模框內進行硬化而成形聚胺基甲酸酯樹脂。此時,藉由預聚物與硬化劑反應而形成聚胺基甲酸酯樹脂,該混合液於中空體大致均勻地分散於上述樹脂中之狀態下進行硬化。藉此,得以形成包含大量大致球狀之氣泡之聚胺基甲酸酯樹脂成形體。 In the molding process, the polyurethane molding resin is formed by flowing the mixed liquid for molding a molded body prepared in the mixing step into a mold frame of 50 to 100 ° C to be cured. At this time, the prepolymer is reacted with a curing agent to form a polyurethane resin, and the mixture is cured in a state where the hollow body is substantially uniformly dispersed in the resin. Thereby, a polyurethane molding having a large number of substantially spherical bubbles is formed.

藉由上述成形體成形步驟所獲得之聚胺基甲酸酯樹脂成形體於其後切成片狀,而形成聚胺基甲酸酯樹脂薄片。藉由進行切片,得以於薄片表面設置開孔。此時,為了形成耐磨耗性優異且不易堵塞之研磨面之開孔,可於80~120℃下老化1小時~10小時左右。 The polyurethane resin molded body obtained by the above-described molded body forming step is thereafter cut into a sheet shape to form a polyurethane resin sheet. By performing slicing, it is possible to provide openings in the surface of the sheet. In this case, in order to form an opening of the polishing surface which is excellent in abrasion resistance and is not easily clogged, it can be aged at 80 to 120 ° C for about 1 hour to 10 hours.

以此方式所獲得之聚胺基甲酸酯樹脂薄片其後於與研磨面為相反側之面貼附雙面膠帶,並切成特定形狀,較佳為圓板狀,形成為本發明之研磨墊。對雙面膠帶並無特別限制,可任意地自該技術領域中公知之雙面膠帶之中選擇而使用。 The polyurethane resin sheet obtained in this manner is then attached to a surface opposite to the polishing surface by a double-sided tape and cut into a specific shape, preferably in the form of a disk, to form a polishing of the present invention. pad. The double-sided tape is not particularly limited and can be arbitrarily selected from among double-sided tapes well known in the art.

又,本發明之研磨墊可為僅包含聚胺基甲酸酯樹脂薄片之單層構造,亦可為於與聚胺基甲酸酯樹脂薄片(研磨層)之研磨面為相反側之面貼合其他層(下層、支持層)而成之複數層。其他層之特性並無特別限定,較佳為於與聚胺基甲酸酯樹脂薄片之研磨面為相反側之面貼合軟於聚胺基甲酸酯樹脂薄片之(A硬度或D硬度較小)層。藉由設置軟 於聚胺基甲酸酯樹脂薄片之層,研磨平坦性進一步提昇。 Further, the polishing pad of the present invention may be a single layer structure including only a polyurethane resin sheet, or may be attached to the opposite side of the polishing surface of the polyurethane resin sheet (abrasive layer). A plurality of layers formed by combining other layers (lower layer, support layer). The characteristics of the other layers are not particularly limited, and it is preferred to apply a softer to the polyurethane resin sheet on the opposite side to the polished surface of the urethane resin sheet (A hardness or D hardness). Small) layer. By setting soft In the layer of the polyurethane resin sheet, the polishing flatness is further improved.

於具有複數層構造之情形時,將複數層彼此使用雙面膠帶或接著劑等視需要一面加壓一面進行接著、固定。對此時所使用之雙面膠帶或接著劑並無特別限制,可任意地自該技術領域中公知之雙面膠帶或接著劑之中進行選擇而使用。 In the case of having a plurality of layers, the plurality of layers are pressed and adhered to each other using a double-sided tape or an adhesive as needed. The double-sided tape or the adhesive used in this case is not particularly limited, and can be optionally used from among double-sided tapes or adhesives known in the art.

進而,本發明之研磨墊可視需要對聚胺基甲酸酯樹脂薄片之研磨面及/或與研磨面為相反側之面進行研削處理,或對研磨面實施溝槽加工或壓紋加工或孔加工(打孔加工),亦可使基材及/或黏著層與聚胺基甲酸酯樹脂薄片貼合,還可具備光透過部。 Further, the polishing pad of the present invention may be subjected to grinding treatment on the polished surface of the polyurethane resin sheet and/or the surface opposite to the polishing surface, or by performing groove processing or embossing or hole on the polished surface. For processing (punching), the substrate and/or the adhesive layer may be bonded to the urethane resin sheet, and a light transmitting portion may be provided.

對研削處理之方法並無特別限制,可藉由公知之方法進行研削。具體而言,可列舉藉由砂紙之研削。 The method of the grinding treatment is not particularly limited, and the grinding can be carried out by a known method. Specifically, grinding by sandpaper is mentioned.

對溝槽加工及壓紋加工之形狀並無特別限制,例如可列舉格子型、同心圓型、放射型等形狀。 The shape of the groove processing and the embossing processing is not particularly limited, and examples thereof include a lattice shape, a concentric shape, and a radial shape.

於使用本發明之研磨墊時,將研磨墊以聚胺基甲酸酯樹脂薄片之研磨面與被研磨物相對之方式安裝於研磨機之研磨壓盤。繼而,一面供給研磨劑漿料一面使研磨壓盤旋轉,對被研磨物之加工表面進行研磨。 When the polishing pad of the present invention is used, the polishing pad is attached to the polishing platen of the grinder so that the polishing surface of the urethane resin sheet faces the object to be polished. Then, while the abrasive slurry is supplied, the polishing platen is rotated to polish the processed surface of the object to be polished.

作為藉由本發明之研磨墊進行加工之被研磨物,可列舉:硬碟、玻璃基板、薄型顯示器用母玻璃、半導體晶圓、半導體元件等。其中,本發明之研磨墊可較佳地用於對半導體元件進行化學機械研磨(CMP)加工。 Examples of the object to be polished which are processed by the polishing pad of the present invention include a hard disk, a glass substrate, a mother glass for a thin display, a semiconductor wafer, and a semiconductor element. Among them, the polishing pad of the present invention can be preferably used for chemical mechanical polishing (CMP) processing of semiconductor elements.

如上所述,本發明之研磨墊於研磨處理性及研磨損傷之產生抑制方面均優異。其原因並不明確,如以下般進行推測。即,於研磨處理時之溫度(約25℃)下,研磨墊較硬,得以充分地進行研磨,另一方面,於研磨加工時之溫度(約45℃~65℃)下,研磨墊軟質化,即便局部產生異物(研磨屑或研磨粒之凝聚物),亦不易損傷被研磨物。因 此,認為本發明之研磨墊為研磨處理性及研磨損傷之產生抑制方面均優異者。 As described above, the polishing pad of the present invention is excellent in both the polishing treatability and the suppression of the occurrence of polishing damage. The reason is not clear, and it is estimated as follows. That is, at the temperature (about 25 ° C) at the time of the polishing treatment, the polishing pad is hard and sufficiently polished, and on the other hand, the polishing pad is softened at a temperature (about 45 ° C to 65 ° C) during the polishing process. Even if foreign matter (grinding debris or aggregates of abrasive grains) is locally generated, it is not easy to damage the object to be polished. because Therefore, it is considered that the polishing pad of the present invention is excellent in both the polishing treatment property and the suppression of the occurrence of polishing damage.

[實施例] [Examples]

以下,藉由實施例對本發明進一步詳細地進行說明,但本發明並不受該等例所限定。 Hereinafter, the present invention will be described in further detail by way of examples, but the invention is not limited by the examples.

於各實施例及比較例以及表1~2中,只要無特別指定,「份」意指「質量份」。 In each of the examples, comparative examples, and Tables 1 and 2, "parts" means "parts by mass" unless otherwise specified.

又,表1~2之各略號意指以下者。 Further, the respective symbols in Tables 1 to 2 mean the following.

所謂NCO當量,係表示利用“(聚異氰酸酯化合物(B)之質量(份)+多元醇化合物(C)之質量(份))/[(聚異氰酸酯化合物(B)1分子之官能基數×聚異氰酸酯化合物(B)之質量(份)/聚異氰酸酯化合物(B)之分子量)-(多元醇化合物(C)1分子之官能基數×多元醇化合物(C)之質量(份)/多元醇化合物(C)之分子量)]”而求出之1個NCO基之預聚物(PP)之分子量之數值。 The NCO equivalent means "(the mass of the polyisocyanate compound (B) + the mass (part) of the polyol compound (C)) / [(the number of functional groups of the polyisocyanate compound (B) 1 molecule × polyisocyanate The mass (parts) of the compound (B) / the molecular weight of the polyisocyanate compound (B)) - (the number of functional groups of the polyol compound (C) 1 molecule × the mass (parts) of the polyol compound (C) / the polyol compound (C) The molecular weight of the prepolymer (PP) of one NCO group obtained by molecular weight)]".

所謂R值,如上所述,係硬化劑中存在之活性氫基(胺基及羥基)相對於預聚物中之末端異氰酸酯基之當量比之數值。 The R value is, as described above, the value of the equivalent ratio of the active hydrogen group (amine group and hydroxyl group) present in the hardener to the terminal isocyanate group in the prepolymer.

[實施例1] [Example 1]

使2,4-甲苯二異氰酸酯770份與分子量850之聚(氧四亞甲基)二醇(PTMG)1000份及二乙二醇155份之混合二醇反應而獲得異氰酸酯基末端胺基甲酸酯預聚物。於所獲得之異氰酸酯基末端胺基甲酸酯預聚物1000份中添加殼部分包含丙烯腈-偏二氯乙烯共聚物且殼內包含有異丁烷氣體之粒子之大小為15~25μm之已膨脹之微小中空球狀體(商品名:EXPANCEL 461 DE20d70(EXPANCEL公司製造))12份、及殼部分包含丙烯腈系且殼內包含有戊烷氣體之粒子之大小為90~130μm之已膨脹之微小中空球狀體(商品名:Matsumoto Microsphere F-80DE(松本油脂製藥(股)製造))12份並進行混合,獲得混合液。將所獲得之混 合液加入至第1液槽,於80℃下進行保溫。繼而,除第1液以外另行製備作為硬化劑之3,3'-二氯-4,4'-二胺基二苯基甲烷(商品名:PANDEX E(DIC公司製造)),並於第2液槽內於120℃下進行保溫。以表示預聚物之異氰酸酯與硬化劑之胺之當量比之R值成為0.70之方式,將第1液槽、第2液槽各者之液體自各注入口注入至具備2個注入口之混合機。一面對所注入之2種液體進行混合攪拌一面向預熱至100℃之成形機之模具注入,其後,進行鎖模,於110℃下加熱30分鐘,使其進行一次硬化。將進行過一次硬化之成形物脫模,其後,利用烘箱於130℃下進行二次硬化2小時,而獲得胺基甲酸酯成形物。將所獲得之胺基甲酸酯成形物放冷至25℃,其後,再次利用烘箱於120℃下加熱5小時後切成1.3mm之厚度,而獲得研磨墊。 770 parts of 2,4-toluene diisocyanate was reacted with 1000 parts of poly(oxytetramethylene) glycol (PTMG) having a molecular weight of 850 and 155 parts of diethylene glycol to obtain an isocyanate-terminated urethane. Ester prepolymer. Adding to the 1000 parts of the obtained isocyanate-terminated urethane prepolymer, the shell portion contains an acrylonitrile-vinylidene chloride copolymer and the particles containing the isobutane gas in the shell have a size of 15 to 25 μm. 12 parts of the expanded hollow hollow spheroid (trade name: EXPANCEL 461 DE20d70 (manufactured by EXPANCEL)), and the shell portion containing acrylonitrile-based particles containing pentane gas in the shell is expanded to a size of 90 to 130 μm. 12 parts of a small hollow spheroid (trade name: Matsumoto Microsphere F-80DE (manufactured by Matsumoto Oil & Fats Co., Ltd.)) was mixed and mixed to obtain a mixed liquid. The mix that will be obtained The liquid mixture was added to the first liquid tank, and the temperature was kept at 80 °C. Then, in addition to the first liquid, 3,3'-dichloro-4,4'-diaminodiphenylmethane (trade name: PANDEX E (manufactured by DIC)) as a curing agent was separately prepared, and in the second The temperature was maintained at 120 ° C in the tank. The liquid of each of the first liquid tank and the second liquid tank is injected from each injection port to a mixer having two injection ports so that the R ratio of the equivalent ratio of the isocyanate of the prepolymer to the amine of the curing agent is 0.70. . The two kinds of liquids to be injected were mixed and stirred, and the mold was injected into a molding machine preheated to 100 ° C. Thereafter, the mold was clamped and heated at 110 ° C for 30 minutes to be hardened once. The molded product which had been hardened once was demolded, and thereafter, secondary hardening was carried out at 130 ° C for 2 hours in an oven to obtain a urethane molded product. The obtained urethane formed product was allowed to cool to 25 ° C, and thereafter, it was further heated in an oven at 120 ° C for 5 hours and then cut into a thickness of 1.3 mm to obtain a polishing pad.

[實施例2~5] [Examples 2 to 5]

將R值如表1般進行變更,除此以外,利用與實施例1相同之方法進行製作,而獲得研磨墊。 The polishing pad was obtained by the same method as in Example 1 except that the R value was changed as shown in Table 1.

[實施例6] [Embodiment 6]

使2,4-甲苯二異氰酸酯770份與分子量1000之聚(氧四亞甲基)二醇(PTMG)1242份及二乙二醇69份之混合二醇反應而獲得異氰酸酯基末端胺基甲酸酯預聚物。於所獲得之異氰酸酯基末端胺基甲酸酯預聚物1000份中添加殼部分包含丙烯腈-偏二氯乙烯共聚物且殼內包含有異丁烷氣體之粒子之大小為30~50μm之已膨脹之微小中空球狀體(商品 名:EXPANCEL 551 DE20d42(EXPANCEL公司製造))18份、及殼部分包含丙烯腈系且殼內包含有戊烷氣體之粒子之大小為90~130μm之已膨脹之微小中空球狀體(商品名:Matsumoto Microsphere F-80DE(松本油脂製藥(股)製造))4.5份並進行混合,獲得混合液。將所獲得之混合液加入至第1液槽,於80℃下進行保溫。繼而,除第1液以外另行製備作為硬化劑之3,3'-二氯-4,4'-二胺基二苯基甲烷(DIC公司製造;商品名:PANDEX E)及將3,3'-二氯-4,4'-二胺基二苯基甲烷與聚醚多元醇之混合硬化劑(DIC公司製造;商品名:PANDEX E50)以1:1之比進行混合而成者,並加入至第2液槽,於120℃下進行保溫。將第1液槽、第2液槽之各者之液體以R值為0.85之比率自各注入口注入至具備2個注入口之混合機。一面對所注入之2種液體進行混合攪拌一面向預熱至80℃之成形機之模具注入,其後,進行鎖模,於模溫80℃下加熱30分鐘,使其進行一次硬化。將進行過一次硬化之成形物脫模,其後,利用烘箱於120℃下進行二次硬化5小時,而獲得胺基甲酸酯成形物。將所獲得之胺基甲酸酯成形物切成1.3mm之厚度,而獲得研磨墊。 770 parts of 2,4-toluene diisocyanate was reacted with a mixed diol of 1242 parts of poly(oxytetramethylene) glycol (PTMG) having a molecular weight of 1000 and 69 parts of diethylene glycol to obtain an isocyanate-terminated urethane. Ester prepolymer. Adding to the 1000 parts of the obtained isocyanate-terminated urethane prepolymer, the shell portion containing the acrylonitrile-vinylidene chloride copolymer and the particles containing the isobutane gas in the shell have a size of 30 to 50 μm. Expanded tiny hollow spheroid (commodity Name: EXPANCEL 551 DE20d42 (manufactured by EXPANCEL)) The expanded hollow spherical spheroids of 18 parts and shells containing acrylonitrile-based particles containing pentane gas in the shell and having a size of 90 to 130 μm (trade name: A portion of 4.5 parts of Matsumoto Microsphere F-80DE (manufactured by Matsumoto Oil & Pharmaceutical Co., Ltd.) was mixed to obtain a mixed liquid. The obtained mixed liquid was added to the first liquid tank, and the temperature was kept at 80 °C. Then, in addition to the first liquid, 3,3'-dichloro-4,4'-diaminodiphenylmethane (manufactured by DIC Corporation; trade name: PANDEX E) and 3,3' as a curing agent were separately prepared. - a mixed hardener of dichloro-4,4'-diaminodiphenylmethane and a polyether polyol (manufactured by DIC Corporation; trade name: PANDEX E50) is mixed at a ratio of 1:1 and added The temperature was maintained at 120 ° C in the second liquid bath. The liquid of each of the first liquid tank and the second liquid tank was injected from each injection port to a mixer having two injection ports at a R value of 0.85. The two kinds of liquids to be injected were mixed and stirred, and the mold was injected into a molding machine preheated to 80 ° C. Thereafter, the mold was clamped and heated at a mold temperature of 80 ° C for 30 minutes to be hardened once. The molded product which had been hardened once was demolded, and thereafter, secondary hardening was carried out at 120 ° C for 5 hours in an oven to obtain a urethane molded product. The obtained urethane formed product was cut into a thickness of 1.3 mm to obtain a polishing pad.

[實施例7~9] [Examples 7 to 9]

將R值如表2般進行變更,除此以外,利用與實施例6相同之方法進行製作,而獲得研磨墊。 The polishing pad was obtained by the same method as in Example 6 except that the R value was changed as shown in Table 2.

[比較例1] [Comparative Example 1]

比較例1中,使用NITTA HAAS公司製造之IC1000研磨墊。 In Comparative Example 1, an IC1000 polishing pad manufactured by NITTA HAAS Co., Ltd. was used.

[比較例2] [Comparative Example 2]

將作為預聚物之日本聚胺基甲酸酯公司製造之「DC-6912」(TDI系預聚物,NCO當量540)1000份加入至第1液槽,於80℃下進行保溫。繼而,除第1液以外另行將作為硬化劑之DIC公司製造之「PANDEX E50」274份加入至第2液槽,並於120℃下進行保溫。進而,於第3液槽中混合作為硬化劑之DIC公司製造之「HYPROX TG-3000」(分子量3000之聚丙二醇)42份及作為發泡劑之水12份,並於50℃下進行保溫。將第1液槽、第2液槽及第3液槽之各者之液體以上述份數之比率自各注入口注入至具備3個注入口之混合機。一面對所注入之3種液體進行混合攪拌一面向預熱至100℃之成形機之模具注入,其後,進行鎖模,於模溫度100℃下進行加熱30分鐘,使其進行一次硬化。將進行過一次硬化之成形物脫模,其後,利用烘箱於130℃下進行二次硬化5小時,而獲得胺基甲酸酯成形物。將所獲得之胺基甲酸酯成形物切成1.3mm之厚度,而獲得研磨墊。 1000 parts of "DC-6912" (TDI-based prepolymer, NCO equivalent 540) manufactured by Japan Polyurethane Co., Ltd., which is a prepolymer, was added to the first liquid tank, and the temperature was kept at 80 °C. Then, 274 parts of "PANDEX E50" manufactured by DIC Corporation, which is a curing agent, was added to the second liquid tank in addition to the first liquid, and the temperature was kept at 120 °C. Further, 42 parts of "HYPROX TG-3000" (polypropylene glycol having a molecular weight of 3,000) and 12 parts of water as a foaming agent manufactured by DIC Corporation, which is a curing agent, were mixed in the third liquid tank, and the mixture was kept at 50 °C. The liquid of each of the first liquid tank, the second liquid tank, and the third liquid tank is injected from each injection port into a mixer having three injection ports at a ratio of the above-mentioned parts. The three kinds of liquids to be injected were mixed and stirred, and the mold was injected into a molding machine preheated to 100 ° C. Thereafter, the mold was clamped and heated at a mold temperature of 100 ° C for 30 minutes to be hardened once. The molded product which had been hardened once was demolded, and thereafter, secondary hardening was carried out at 130 ° C for 5 hours in an oven to obtain a urethane molded product. The obtained urethane formed product was cut into a thickness of 1.3 mm to obtain a polishing pad.

<物性> <physical property>

針對上述各實施例及比較例,藉由TA Instruments公司製造之RSAIII,以初期負荷10~700g、應變範圍0.1~1.0%、測定頻率10弧度/秒、升溫速度3℃/分鐘對自20℃升溫至100℃時之25℃、45℃及65℃下之試片5mm×10mm之儲存彈性模數E'、損失彈性模數E"、tanδ進行測定。詳細條件如下。 For each of the above examples and comparative examples, the RSAIII manufactured by TA Instruments has an initial load of 10 to 700 g, a strain range of 0.1 to 1.0%, a measurement frequency of 10 rad/sec, and a temperature increase rate of 3 ° C/min for heating from 20 ° C. The storage elastic modulus E', the loss elastic modulus E", and the tan δ of the test piece of 5 mm × 10 mm at 25 ° C, 45 ° C and 65 ° C at 100 ° C were measured. The detailed conditions are as follows.

測定裝置:TA Instruments Japan RSAIII Measuring device: TA Instruments Japan RSAIII

試驗方向:拉伸 Test direction: stretching

試片:5×10mm Test piece: 5 × 10mm

負荷:200g Load: 200g

應變:0.1% Strain: 0.1%

頻率:10弧度/秒(=1.59Hz) Frequency: 10 radians/second (=1.59 Hz)

溫度:20~100℃ Temperature: 20~100°C

試樣厚度:1.3mm Sample thickness: 1.3mm

將其結果示於表3。 The results are shown in Table 3.

<<評價試驗>> <<Evaluation test>>

<1.研磨處理試驗> <1. Grinding treatment test>

針對各實施例、比較例,利用以下條件進行研磨處理、並進行評價。 For each of the examples and the comparative examples, the polishing treatment was carried out under the following conditions and evaluated.

(研磨處理條件) (grinding conditions)

‧使用研磨機:荏原製作所公司製造,F-REX300 ‧Use grinding machine: manufactured by Ebara Seisakusho Co., Ltd., F-REX300

‧轉數:(壓盤)80rpm,(修整器)36rpm ‧ number of revolutions: (platen) 80rpm, (dresser) 36rpm

‧壓力:30N ‧ Pressure: 30N

‧研磨劑:水 ‧ abrasive: water

‧研磨劑溫度:20℃ ‧Abrasant temperature: 20 ° C

‧研磨劑吐出量:500ml/min ‧ Abrasives discharge: 500ml/min

‧研磨時間:30分鐘 ‧ Grinding time: 30 minutes

‧修整器:住友3M A188金剛石研磨(外徑4.25inch) ‧ Dresser: Sumitomo 3M A188 diamond grinding (outer diameter 4.25inch)

‧霧化器:不使用 ‧ atomizer: not used

(研磨性評價) (Evaluation of abrasiveness)

對研磨處理前後之研磨面利用雷射CCD(Charge Coupled Device,電荷耦合元件)進行拍攝。雷射CCD圖像使用KEYENCE公司製造之VK-X200(倍率:物鏡×10目鏡×20;測定間距:6μm;亮度:6207)。其後,對拍攝圖像進行二值化處理,並對研磨面之增加量進行測定。二值化處理係使用分析軟體WinRoof ver 6.5(測定範圍:1mm×1.4mm;中值:過濾器5*5;對比度:75;自動二值化:判別分析法閾值88)。 The polished surface before and after the polishing treatment was imaged by a laser CCD (Charge Coupled Device). The laser CCD image was VK-X200 manufactured by KEYENCE Corporation (magnification: objective lens × 10 eyepiece × 20; measurement pitch: 6 μm; brightness: 6207). Thereafter, the captured image was binarized, and the amount of increase in the polished surface was measured. The binarization treatment used the analysis software WinRoof ver 6.5 (measurement range: 1 mm x 1.4 mm; median: filter 5*5; contrast: 75; automatic binarization: discriminant analysis threshold 88).

研磨處理後之研磨面增加量與研磨處理前之研磨面相比,判斷為10%以下之研磨墊之研磨性較差(×),超過10%至未達30%之研磨墊之研磨性不充分(△),30%以上之研磨墊之研磨性良好(○)。將其結果示於表3。 The amount of increase in the polishing surface after the polishing treatment is determined to be inferior (×) in the polishing pad of 10% or less compared with the polished surface before the polishing treatment, and the polishing property of the polishing pad exceeding 10% to less than 30% is insufficient ( △), the polishing pad of 30% or more of the polishing pad is good (○). The results are shown in Table 3.

<2.研磨試驗(刮痕之有無)> <2. Grinding test (with or without scratches)>

針對各實施例及比較例之研磨墊,於以下研磨條件下進行研磨加工,並進行研磨損傷(刮痕)之評價。作為被研磨物,使用TEOS(Tetra Ethyl Ortho Silicate,正矽酸乙酯)膜。 The polishing pads of the respective examples and comparative examples were subjected to polishing treatment under the following polishing conditions, and evaluation of polishing damage (scratches) was performed. As the object to be polished, a TEOS (Tetra Ethyl Ortho Silicate) film was used.

對25塊基板進行研磨,並對研磨加工後之第21~25塊基板之5塊基板於晶圓表面檢查裝置(KLA-Tencor公司製造,Surfscan SP1DLS)之高感度測定模式下進行測定,對基板表面之刮痕之有無以未觀察到刮痕者設為○、觀察到刮痕者設為×之方式進行評價。將其結果示於表3。 The 25 substrates were polished, and the five substrates of the 21st to 25th substrates after the polishing were measured in a high-sensitivity measurement mode of a wafer surface inspection device (Surfscan SP1DLS, manufactured by KLA-Tencor Co., Ltd.). The presence or absence of the scratch on the surface was evaluated such that the scratch was not observed and the scratch was observed to be ×. The results are shown in Table 3.

再者,上述試驗中所使用之研磨條件如下。 Further, the polishing conditions used in the above test were as follows.

‧使用研磨機:荏原製作所製造,F-REX300 ‧Use grinding machine: 荏原制作,F-REX300

‧研磨墊直徑:740 ‧ polishing pad diameter: 740

‧轉數:(壓盤)70rpm,(頂環)71rpm ‧ number of revolutions: (platen) 70rpm, (top ring) 71rpm

‧研磨壓力:3.5psi ‧ Grinding pressure: 3.5psi

‧研磨劑:Cabot公司製造SS25(使用SS25原液:純水=1:1之混合液) ‧ Abrasives: SS25 manufactured by Cabot (using SS25 stock solution: pure water = 1:1 mixture)

‧研磨劑溫度:20℃ ‧Abrasant temperature: 20 ° C

‧研磨劑噴出量:200ml/min ‧Blasting amount of abrasive: 200ml/min

‧使用工件(被研磨物):TEOS膜於12英吋矽晶圓上利用PECVD(Plasma Enhanced Chemical Vapor Deposition,電漿輔助化學氣相沈積)以使四乙氧基矽烷成為1μm之厚度之絕緣膜之方式形成的基板 ‧Use workpiece (abrasive): TEOS film at 12 inches A substrate formed by using PECVD (Plasma Enhanced Chemical Vapor Deposition) on a silicon wafer to form an epoxy film having a thickness of 1 μm.

‧研磨時間:60sec ‧ Grinding time: 60sec

<試驗結果> <test result>

研磨處理試驗之結果為,實施例1~9之研磨墊之tanδ(25℃)之值為0.25以下,研磨處理後之研磨面之增加量較高,為30%以上。另一方面,比較例2之研磨墊之tanδ(25℃)之值較高,研磨性較差。 As a result of the polishing treatment test, the values of tan δ (25 ° C) of the polishing pads of Examples 1 to 9 were 0.25 or less, and the amount of increase of the polished surface after the polishing treatment was as high as 30% or more. On the other hand, the polishing pad of Comparative Example 2 had a high value of tan δ (25 ° C) and was inferior in abrasiveness.

又,研磨試驗之結果為,實施例1~9之研磨墊之E'(45℃)及E'(65℃)之值為200MPa以下,未發現刮痕之產生。另一方面,比較例1之研磨墊之E'(45℃)及E'(65℃)之值較高,確認有刮痕之產生。 Further, as a result of the polishing test, the values of E' (45 ° C) and E' (65 ° C) of the polishing pads of Examples 1 to 9 were 200 MPa or less, and no scratches were observed. On the other hand, the values of E' (45 ° C) and E' (65 ° C) of the polishing pad of Comparative Example 1 were high, and the occurrence of scratches was confirmed.

因此,本發明之研磨墊由於tanδ(25℃)、E'(45℃)及E'(65℃)為特定之範圍內,故而判定研磨性及刮痕之產生抑制方面均優異。 Therefore, since the polishing pad of the present invention has a range of tan δ (25° C.), E′ (45° C.), and E′ (65° C.), it is determined that the polishing property and the occurrence of scratches are excellent.

[產業上之可利用性] [Industrial availability]

本發明之研磨墊於研磨處理性及研磨損傷之產生抑制方面均優異。因此,本發明之研磨墊及其製造方法於產業上具有可利用性。 The polishing pad of the present invention is excellent in both the polishing treatment property and the suppression of the occurrence of polishing damage. Therefore, the polishing pad of the present invention and the method for producing the same are industrially available.

Claims (8)

一種研磨墊,其係具備聚胺基甲酸酯樹脂薄片者,且於測定頻率10弧度/秒及拉伸模式下進行測定時,上述聚胺基甲酸酯樹脂薄片之25℃下之損失彈性模數E"(25℃)相對於儲存彈性模數E'(25℃)之比率(tanδ(25℃))為0.25以下,上述聚胺基甲酸酯樹脂薄片之45~65℃下之儲存彈性模數E'為200MPa以下。 A polishing pad which is provided with a polyurethane resin sheet and has a loss elasticity at 25 ° C of the above-mentioned polyurethane film sheet when measured at a measurement frequency of 10 rad/sec and a tensile mode. The ratio of the modulus E" (25 ° C) to the storage elastic modulus E' (25 ° C) (tan δ (25 ° C)) is 0.25 or less, and the storage of the above-mentioned polyurethane resin sheet at 45 to 65 ° C The elastic modulus E' is 200 MPa or less. 如請求項1之研磨墊,其於測定頻率10弧度/秒及拉伸模式下進行測定時,上述聚胺基甲酸酯樹脂薄片之25℃下之損失彈性模數E"(25℃)相對於儲存彈性模數E'(25℃)之比率(tanδ(25℃))與65℃下之損失彈性模數E"(65℃)相對於儲存彈性模數E'(65℃)之比率(tanδ(65℃))之比即tanδ(25℃)/tanδ(65℃)為0.95以下。 When the polishing pad of claim 1 is measured at a measurement frequency of 10 rad/sec and a tensile mode, the loss elastic modulus E" (25 ° C) of the polyurethane resin sheet at 25 ° C is relatively The ratio of the storage elastic modulus E' (25 ° C) (tan δ (25 ° C)) to the loss elastic modulus E" (65 ° C) at 65 ° C relative to the storage elastic modulus E' (65 ° C) ( The tan δ (65 ° C) ratio, that is, tan δ (25 ° C) / tan δ (65 ° C) is 0.95 or less. 如請求項1之研磨墊,其於測定頻率10弧度/秒及拉伸模式下進行測定時,上述聚胺基甲酸酯樹脂薄片之65℃下之損失彈性模數E"(65℃)相對於儲存彈性模數E'(65℃)之比率(tanδ(65℃))為0.12~0.30之範圍內。 When the polishing pad of claim 1 is measured at a measurement frequency of 10 rad/sec and a tensile mode, the loss elastic modulus E" (65 ° C) of the polyurethane resin sheet at 65 ° C is relatively The ratio of the storage elastic modulus E' (65 ° C) (tan δ (65 ° C)) is in the range of 0.12 to 0.30. 如請求項1之研磨墊,其至少包含1種中空體。 The polishing pad of claim 1, which comprises at least one hollow body. 如請求項4之研磨墊,其中上述中空體包含平均粒徑5~60μm之第1中空體及平均粒徑70~150μm之第2中空體。 The polishing pad according to claim 4, wherein the hollow body comprises a first hollow body having an average particle diameter of 5 to 60 μm and a second hollow body having an average particle diameter of 70 to 150 μm. 一種如請求項1之研磨墊之製造方法,其包含如下步驟:至少將作為預聚物之含有聚胺基甲酸酯鍵之異氰酸酯化合物(A)、硬化劑(D)、及中空體(E)進行混合,獲得成形體成形用混合液;及 利用上述成形體成形用混合液成形聚胺基甲酸酯樹脂成形體,獲得聚胺基甲酸酯樹脂薄片;且上述硬化劑(D)包含選自由聚胺化合物(D-1)及多元醇化合物(D-2)所組成之群中之至少1種,且以上述聚胺基甲酸酯樹脂薄片之、硬化劑(D)中存在之活性氫基相對於存在於作為預聚物之含有聚胺基甲酸酯鍵之異氰酸酯化合物(A)之末端之異氰酸酯基的當量比即R值成為0.60~1.40之方式將各成分進行混合。 A method for producing a polishing pad according to claim 1, comprising the steps of: at least a polyurethane-containing isocyanate compound (A), a hardener (D), and a hollow body (E) as a prepolymer Mixing to obtain a mixed solution for forming a shaped body; and The polyurethane resin molded article is formed by the above-mentioned mixed solution for molding a molded body to obtain a polyurethane resin sheet; and the curing agent (D) contains a polyamine compound (D-1) and a polyol selected from the group consisting of polyamine compound (D-1) and polyol At least one of the group consisting of the compound (D-2), and the active hydrogen group present in the curing agent (D) of the above-mentioned polyurethane resin sheet relative to the content contained in the prepolymer The components are mixed so that the equivalent ratio of the isocyanate groups at the terminal of the isocyanate compound (A) of the polyurethane bond is 0.60 to 1.40. 如請求項6之研磨墊之製造方法,其中上述中空體(E)包含平均粒徑5~60μm之第1中空體及平均粒徑70~150μm之第2中空體。 The method for producing a polishing pad according to claim 6, wherein the hollow body (E) comprises a first hollow body having an average particle diameter of 5 to 60 μm and a second hollow body having an average particle diameter of 70 to 150 μm. 如請求項6之研磨墊之製造方法,其進而包含使聚異氰酸酯化合物(B)與多元醇化合物(C)進行反應而獲得作為預聚物之上述含有聚胺基甲酸酯鍵之異氰酸酯化合物(A)之步驟,且上述多元醇化合物(C)包含數量平均分子量600~1300之聚(氧四亞甲基)二醇。 The method for producing a polishing pad according to claim 6, which further comprises reacting the polyisocyanate compound (B) with the polyol compound (C) to obtain the above-mentioned polyurethane bond-containing isocyanate compound as a prepolymer ( The step of A), wherein the above polyol compound (C) comprises poly(oxytetramethylene) glycol having a number average molecular weight of 600 to 1300.
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