KR20130032202A - Light emitting device package and light unit having the same - Google Patents

Abstract

PURPOSE: A light emitting device package and a light unit including the same are provided to improve the reliability of a light unit by integrally forming a ceramic based sidewall member and a ceramic layer including a fluorescent substance. CONSTITUTION: A first support member(12) has a first metal layer and a second metal layer. A second support member(17) is arranged on the first area of the first support member. A light emitting chip(18) is arranged on the second support member. A sidewall member(14) includes a first sidewall part and a second sidewall part. A ceramic layer(15) includes an outer part and an inner part.

Description

LIGHT EMITTING DEVICE PACKAGE AND LIGHT UNIT HAVING THE SAME}

The embodiment relates to a light emitting device and a light unit having the same.

 A light emitting device, such as a light emitting device, is a kind of semiconductor device that converts electrical energy into light, and has been spotlighted as a next-generation light source by replacing a conventional fluorescent lamp and an incandescent lamp.

Since the light emitting diode generates light by using a semiconductor element, the light emitting diode consumes very low power as compared with an incandescent lamp that generates light by heating tungsten, or a fluorescent lamp that generates ultraviolet light by impinging ultraviolet rays generated through high-pressure discharge on a phosphor .

In addition, since the light emitting diode generates light using the potential gap of the semiconductor device, it has a longer lifetime, faster response characteristics, and an environment-friendly characteristic as compared with the conventional light source.

Accordingly, much research has been conducted to replace an existing light source with a light emitting diode, and a light emitting diode is increasingly used as a light source for various lamps used for indoor and outdoor use, lighting devices such as a liquid crystal display, an electric signboard, and a streetlight.

The embodiment provides a light emitting device package having a new structure.

In an embodiment, a light emitting chip is disposed on a support member, and a ceramic sidewall member coupled to the support member is disposed around the light emitting chip, and a phosphor coupled to the sidewall member and covering the light emitting chip is added. A light emitting device package including a ceramic layer and a light unit including the same are provided.

The embodiment provides a light emitting device package having a ceramic-based sidewall member and a ceramic layer to which phosphors are added, and a light unit having the same.

The light emitting device package according to the embodiment includes a first support member having a first metal layer and a second metal layer; A second support member electrically connected to the first metal layer and the second metal layer of the first support member, the second support member disposed on a first area of the upper surface of the first support member; A light emitting chip disposed on the second support member; A side wall member having a hole wider than the width of the second support member and including a first side wall portion disposed around the second support member and a second side wall portion disposed on the first side wall portion; And a ceramic layer including an outer portion coupled between the first side wall portion and the second side wall portion of the sidewall member, and an inner portion connected to the outer portion and spaced apart from the light emitting chip on the light emitting chip.

The light emitting device package according to the embodiment includes a first support member having a first metal layer and a second metal layer; A light emitting chip disposed on the first support member and electrically connected to the first metal layer and the second metal layer; A side wall member having a hole therein and including a first side wall portion disposed around an upper surface of the first support member and a second side wall portion disposed on the first side wall portion; And a ceramic layer including an outer portion coupled between the first side wall portion and the second side wall portion of the sidewall member, and an inner portion connected to the outer portion and spaced apart from the light emitting chip.

The embodiment provides a light emitting device package having a new structure.

The embodiment provides a light emitting device package capable of integrally providing a ceramic-based sidewall member and a ceramic layer to which phosphors are added.

The embodiment provides a light emitting device package in which the sidewall member and the ceramic layer to which the phosphor is added are easily coupled.

The embodiment provides a light emitting device package capable of replacing the ceramic layer to which the sidewall member and the phosphor are added.

The embodiment may improve the reliability of the light emitting device package and the light unit having the same.

1 is a side cross-sectional view illustrating a light emitting device package according to a first embodiment.
FIG. 2 is a diagram illustrating another example of the light emitting device package of FIG. 1.
3 is a diagram illustrating still another example of the light emitting device package of FIG. 1.
4 is a side cross-sectional view illustrating a light emitting device package according to a second embodiment.
5 is a side cross-sectional view illustrating a light emitting device package according to a third embodiment.
6 is a side cross-sectional view illustrating a light emitting device package according to a fourth embodiment.
7 is a side cross-sectional view illustrating a light emitting device package according to a fifth embodiment.
8 is a view showing another example of the side wall portion in the embodiment.
9 is a side cross-sectional view illustrating a light emitting device package according to a sixth embodiment.
10 is a diagram illustrating an example of a second substrate in an embodiment.
11 is a side cross-sectional view illustrating a light emitting device package according to a seventh embodiment.
12 and 13 illustrate a manufacturing process of the light emitting device package of FIG. 1.
14 is a view showing a light emitting chip according to an embodiment.
15 is a diagram illustrating another example of a light emitting chip according to one embodiment.
16 is a diagram illustrating a display device having the light emitting device package of FIG. 1.
17 is a diagram illustrating another example of a display device having the light emitting device package of FIG. 1.
18 is a view illustrating a lighting device having the light emitting device package of FIG. 1.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under / under"Quot; on "and" under "as used herein are intended to refer to all that is" directly "or" indirectly " . In addition, the criteria for up / down or down / down each layer will be described with reference to the drawings. In the drawings, sizes are exaggerated, omitted, or schematically illustrated for convenience and clarity of description. Also, the size of each component does not entirely reflect the actual size. Like reference numerals denote like elements throughout the description of the drawings.

Hereinafter, a light emitting device package according to an embodiment will be described with reference to the accompanying drawings.

1 is a side cross-sectional view illustrating a light emitting device package according to a first embodiment.

Referring to FIG. 1, the light emitting device package may include a first support member 12; A second support member 17 on the first support member 12; A light emitting chip 18 on the second support member 17; A sidewall member 14 disposed on the first support member 12 and disposed around the light emitting chip 18; And a ceramic layer 15 coupled to the sidewall member 14 and to which a phosphor disposed on the light emitting chip 18 is added.

The first support member 12 may be a resin-based printed circuit board (PCB), a silicon-based such as silicon or silicon carbide (SiC), a ceramic-based such as aluminum nitride (AlN), It may be formed of at least one of a resin series such as polyphthalamide (PPA), a liquid crystal polymer (PCB), and a metal core PCB (MCPCB) having a metal layer on the bottom thereof, but is not limited thereto.

The first support member 12 includes a first metal layer 12-1, a second metal layer 12-2, a first connection member 12-3, a second connection member 12-4, and a first lead. The part 12-5 and the 2nd lead part 12-6 are included. The first metal layer 12-1 and the second metal layer 12-2 are disposed to be spaced apart from each other on the first support member 12. The first lead portion 12-5 and the second lead portion 12-6 are disposed to be spaced apart from each other under the first support member 12. The first connection member 12-3 may be disposed inside or on the first side surface of the first support member 12. The first metal layer 12-1 and the first lead portion 12-5 may be disposed. ) To each other. The second connection member 12-4 may be disposed inside or on the second side surface of the first support member 12, and the second metal layer 12-2 and the second lead part 12-6 may be disposed. ) To each other.

The first metal layer 12-1, the second metal layer 12-2, the first lead part 12-5, and the second lead part 12-6 are made of a metal material, for example, titanium (Ti). At least one of copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), phosphorus (P), or It may be formed of these optional alloys, and may be formed of a single metal layer or a multilayer metal layer.

The first connection member 12-3 and the second connection member 12-4 include at least one of a via, a via hole, and a through hole.

The second support member 17 is disposed on the first region of the top region of the first support member 12, and the sidewall member 14 is disposed on the second region. The second area may be a circumference of the first area.

The second support member 17 may be a resin-based printed circuit board (PCB), a silicon-based such as silicon (silicon) or silicon carbide (silicon carbide (SiC)), a ceramic-based such as aluminum nitride (AlN), poly It can be formed of at least one of a resin-based, such as phthalamide (polyphthalamide: PPA), a liquid crystal polymer (Liquid Crystal Polymer), but is not limited to these materials. The second support member 17 may include a ceramic substrate, and the ceramic substrate may have a higher heat dissipation efficiency than a resin substrate.

The second support member 17 includes a third metal layer 17-1, a fourth metal layer 17-2, a third connection member 17-3, a fourth connection member 17-4, and a third lead. Part 17-5 and fourth lead part 17-6 are included. The third metal layer 17-1 and the fourth metal layer 17-2 are disposed to be spaced apart from each other on the second support member 17. The third lead portion 17-5 and the fourth lead portion 17-6 are disposed to be spaced apart from each other under the second support member 17. The third connection member 17-3 may be disposed inside or on the first side surface of the second support member 17, and the third metal layer 17-1 and the third lead portion 17-5 may be disposed in the second support member 17. ) To each other. The fourth connecting member 17-4 may be disposed inside or on the second side surface of the second supporting member 17, and the fourth metal layer 17-2 and the fourth lead part 17-6 are formed. ) To each other.

The third lead portion 17-5 may be disposed on the first metal layer 12-1 to be electrically connected to the first metal layer 12-1, and the fourth lead portion 17-6 may be electrically connected to the first metal layer 12-1. The second metal layer 12-2 may be disposed on and electrically connected to the second metal layer 12-2. The third lead portion 17-5 is disposed on the first metal layer 12-1, and the fourth lead portion 17-6 is disposed on the second metal layer 12-2.

The third metal layer 17-1, the fourth metal layer 17-2, the third lead portion 17-5 and the fourth lead portion 17-6 are made of a metal material, for example, titanium (Ti). At least one of copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), phosphorus (P), or It may be formed of these optional alloys, and may be formed of a single metal layer or a multilayer metal layer.

The third connection member 17-3 and the fourth connection member 17-4 include at least one of a via, a via hole, and a through hole.

The second support member 17 may be formed to be wider than the width of the first support member 12, and may be formed to be thinner than the thickness of the first support member 12. The thermal conductivity of the second support member 17 and the first support member 12 may be different from each other. For example, the thermal conductivity of the second support member 17 may be higher than that of the first support member 12. Can be high. For example, the second support member 17 may be formed of a ceramic material, and the first support member 12 may be formed of a resin material.

The light emitting chip 18 is disposed on the third metal layer 17-1 of the second supporting member 17 and electrically connected to the third metal layer 17-1 and the fourth metal layer 17-2. Is connected. The light emitting chip 18 may be bonded to the third metal layer 17-1 and connected to the fourth metal layer 17-2 by a wire 19. As another example, the light emitting chip 18 may be connected to the third metal layer 17-1 and the fourth metal layer 17-2 by a wire 19 or bonded in a flip manner.

The light emitting chip 18 may selectively emit light in a range of visible light to ultraviolet light, for example, UV (Ultraviolet) LED chip, red LED chip, blue LED chip, green LED chip, yellow green LED It may optionally include a colored LED chip such as a chip.

The light emitting chip 18 may be disposed on an upper surface of the second support member 17, but is not limited thereto. Heat generated from the light emitting chip 18 may be conducted through the second support member 17.

The side wall member 14 may be disposed on an upper surface of the first support member 12, and may be formed in at least one of a cylindrical shape, an elliptical cylinder, and a polygonal cylinder when viewed from above. The side wall member 14 may include at least one of a ring shape, a loop shape, and a frame shape that are continuously connected.

The side wall member 14 is spaced apart from the side surface of the second support member 17 and is formed along the circumference of the upper surface of the first support member 12. The side wall member 14 covers the circumference of the light emitting chip 18 to reflect the light emitted from the light emitting chip 18. The side wall member 14 may be a reflective wall, but is not limited thereto.

An adhesive member 13 is disposed between the first support member 12 and the side wall member 14, and the adhesive member 13 includes an adhesive or an adhesive, and the first support member 12 and the The side wall members 14 may be bonded to each other.

The side wall member 14 may be formed of a ceramic-based material. The side wall member 14 includes, for example, a second metal oxide as a reflector in the first metal oxide. The second metal oxide may be formed of a material having a refractive index different from that of the first metal oxide, for example, higher than that of the first metal oxide. The first metal oxide may include Al ₂ O ₃ as a material having a refractive index of less than ₂ , and the second metal oxide may include a material having a refractive index of 2 or more, such as TiO ₂ . The second metal oxide may include at least one of SnO ₂ , ZnO, and Ta ₂ O ₅ as another material. The second metal oxide may be formed of a material having a refractive index of 0.3 or more higher than the refractive index of the first metal oxide.

The second metal oxide may be added in 30% or more in the first metal oxide, and may be added in an amount of about 50 to 95% for reflectance. The reflectance of the sidewall member 14 may vary depending on the amount of the second metal oxide added in the first metal oxide.

The side wall member 14 is spaced apart from the side surface of the light emitting chip 18. The side wall member 14 includes a first side wall portion 14-1 and a second side wall portion 14-2 on the first side wall portion 14-1, and the first side wall portion 14-1. 1) and the second side wall portion 14-2 may be the same ceramic material or different ceramic materials, but are not limited thereto.

The width of the first side wall portion 14-1 may be the same width as that of the second side wall portion 14-2. As another example, the width of the first side wall portion 14-1 may be wider than the width of the second side wall portion 14-2. Inner side surfaces of the first side wall portion 14-1 and the second side wall portion 14-2 may have the same plane or may have a stepped structure.

The first side wall portion 14-1 and the second side wall portion 14-2 may have a stack structure of a plurality of ceramic layers.

The thickness T1 of the first side wall portion 14-1 may be thicker than the thickness of the second side wall portion 14-2, and an upper surface thereof is larger than an upper surface height of the light emitting chip 18. Can be placed high. The thickness T1 may be formed to about 250 μm or more, for example, about 250 μm to 1000 μm.

The ceramic layer 15 is a translucent layer and is disposed on the light emitting chip 18. An outer portion of the ceramic layer 15 may be disposed between the first side wall portion 14-1 and the second side wall portion 14-2, and an inner portion may be disposed on the second support member 17. have.

An outer portion of the ceramic layer 15 may contact between the first side wall portion 14-1 and the second side wall portion 14-2. The inner part of the ceramic layer 15 extends horizontally with the outer part of the ceramic layer 15. The ceramic layer 15 may be formed as a horizontal layer, and may be disposed in parallel with an upper surface or a lower surface of at least one of the first support member 12 and the second support member 17.

The ceramic layer 15 is spaced apart from the first support member 12 at the same interval as the thickness T1 of the first side wall portion 14-1. The width of the ceramic layer 15 may be formed to have the same width as the length of the sidewall member 14, that is, the distance between the outer side surfaces. Accordingly, the ceramic layer 15 is disposed between the first hole 14A and the second hole 14B of the side wall member 14. The ceramic layer 15 is spaced apart from the top surface of the light emitting chip 18 to convert some of the light emitted from the light emitting chip 18 to emit light having a different wavelength.

The ceramic layer 15 is a ceramic-based material, and may be a metal oxide such as Al ₂ O _3, or may include a glass material. The phosphor added to the ceramic layer 15 may include at least one of a red phosphor, a green phosphor, a blue phosphor, and a yellow phosphor. The phosphor may be selectively formed among, for example, YAG, TAG, Silicate, Nitride, and Oxy-nitride-based materials. The ceramic layer 15 may be integrally formed by the firing process of the first side wall portion 14-1 and the second side wall portion 14-2, but is not limited thereto.

A first hole 14A is formed in the first side wall portion 14-1 of the side wall member 14, and a second hole 14B is formed in the second side wall portion 14-2. The first hole 14A may be an empty area or may be formed of another light transmitting material. The second hole 14B may be an empty area, and may be formed in a concave groove or cavity structure on the ceramic layer 15. The first hole 14A and the second hole 14B may include a circular, elliptical, or polygonal shape, but are not limited thereto.

The width of the second hole 14B may be equal to the width of the first hole 14A or larger than the width of the first hole 14A. The width of the first hole 14A and the second hole 14B may be a gap between the inner side surfaces of the side wall member 14. The outer side surface of the side wall member 14 and the side surface of the first support member 12 may be disposed on the same plane.

FIG. 2 is another example of the light emitting device package of FIG. 1.

Referring to FIG. 2, in the light emitting device package, a light transmissive resin layer 16 is disposed on a ceramic layer 15 to which phosphor is added, and the light transmissive resin layer 16 includes a silicon or epoxy material. The transparent resin layer 16 may be formed in the second hole 14B of the side wall member 14, but is not limited thereto.

The transparent resin layer 16 may have a thickness equal to or different from the thickness of the second side wall portion 14-2 of the side wall member 14, but is not limited thereto.

A low reflection coating layer 15-1 may be formed on the bottom surface of the ceramic layer 15, and the low reflection coating layer 15-1 may be formed of an anti reflect coating. The low reflection coating layer 15-1 reduces the reflection loss caused by the ceramic layer 15.

3 is another example of the light emitting device package of FIG. 1.

Referring to FIG. 3, the light emitting device package includes a lens 16A on the ceramic layer 15 to which phosphor is added. The lens 16A may be formed in a convex lens shape on the ceramic layer 15. As another example, the lens 16A may include at least one of a concave lens, a flat lens, a cylindrical lens, a prism lens, and a Fresnel lens. It may include. As another example, a translucent resin layer may be further formed between the ceramic layer 15 and the lens, but is not limited thereto.

The bottom width of the lens 16A may be formed to be narrower than the width of the ceramic layer 15, and the high point of the lens 16A may be formed higher than the top surface of the side wall member 14. .

4 is a view showing a light emitting device package according to a second embodiment.

Referring to FIG. 4, the light emitting device package 21 may include a first support member 22 having a recess 22A thereon and a second support disposed in the recess 22A of the first support member 22. The sidewall member 24 disposed on the member 27, the light emitting chip 28 and the light emitting chip 28 on the second support member 27, and arranged around the upper surface of the first support member 22. ), And a ceramic layer 25 to which phosphors are added on the light emitting chip 28.

An upper portion of the first support member 22 is opened and a concave portion 22A concave to a depth lower than an upper surface thereof is disposed, and the second support member 27 is disposed on the concave portion 22A. The depth of the recess 22A may be about the thickness of the second support member 7 or may be formed to be thicker than the thickness of the second support member 7.

The second support member 7 may be attached to the recess 22A with an adhesive or an adhesive, but is not limited thereto.

The first metal layer 22-1 and the second metal layer 22-4 are disposed on the upper surface of the first support member 2, and the first metal layer 22-1 and the second metal layer 22-4 are disposed. The spacing between can be further spaced apart than the width of the recess 22A. The first metal layer 22-1 is disposed higher than the bottom of the recess 22A and is connected to the first connecting member 22-2, and the first connecting member 22-2 is connected to the first lead part. Connected to (22-3). The first connection member 22-2 is formed on the first side surface of the first support member 22, and the first lead part 22-3 is disposed on the bottom surface of the first support member 22. do.

The second metal layer 22-4 is disposed higher than the bottom of the recess 22A and is connected to the second connecting member 22-5, and the second connecting member 22-5 is a second lead portion. Connected to (22-6). The second connecting member 22-5 is formed on the second side surface of the first supporting member 22, and the second lead portion 22-6 is formed on the lower surface of the first supporting member 22. Is placed.

The light emitting chip 28 is disposed on the second support member 27, and is connected to the first metal layer 22-1 and the second metal layer 22-4 by wire.

The second support member 27 may be accommodated in the recess 22A of the first support member 22, thereby reducing the thickness of the sidewall member 24.

The thickness of the first side wall portion 24-1 and the second side wall portion 24-2 of the side wall member 24 may be the same or different from each other, but is not limited thereto. An adhesive or an adhesive may be disposed between the first support member 22 and the side wall member 24, but is not limited thereto.

The first hole 24A of the side wall member 24 is disposed below the ceramic layer 25 and may be empty or filled with another light-transmitting material, and the second hole 24B disposed on the ceramic layer 25. ) May be empty or filled with other translucent materials.

5 is a view showing a light emitting device package according to a third embodiment.

Referring to FIG. 5, the light emitting device package 31 may include a first support member 32 having a recess 32A and a second support member disposed on the recess 32A of the first support member 32. 37, a light emitting chip 38 on the second support member 37, a sidewall member 34 disposed around the upper surface of the first support member 32 and disposed around the light emitting chip 38. It includes a ceramic layer 35 on which the phosphor is added on the light emitting chip 38.

The depth T2 of the recess 32A of the first support member 32 may be formed to the same depth as the thickness of the second support member 37 or may be formed to a lower depth. The depth T2 of the concave portion 32A makes the thickness T3 of the first side wall portion 34-1 of the side wall member 34 thinner than that of FIG. 1, thereby reducing the thickness of the light emitting device package 31. Can be reduced.

The recess 32A of the first support member 32 may have the same width as the width of the inner first hole 34A of the side wall member 34, and the width of the second support member 37. It can be formed in a wider width than.

In the first support member 32, a first metal layer 32-1 and a second metal layer 32-2 are disposed in the recess 32A, and the first metal layer 32-1 and the second metal layer are disposed. 32-2 may be disposed at a position lower than an upper surface of the first support member 32. The first connecting member 32-3 and the second connecting member 32-4 are disposed in the first supporting member 32, and the first connecting member 32-3 and the second connecting member 32 are disposed. The height of −4 may be lower than the thickness of the first support member 32. The first lead part 32-5 and the second lead part 32-6 are disposed on the lower surface of the first support member 32.

The second support member 37 includes a third metal layer 37-1, a fourth metal layer 37-2, a third connection member 37-3, a fourth connection member 37-4, and a third lead The part 37-5 and the fourth lead part 37-6 are included.

The first support member 32 and the side wall member 34 may be attached to each other as an adhesive member, but is not limited thereto.

The thickness of the first side wall portion 34-1 and the second side wall portion 34-2 of the side wall member 34 may be the same or different.

The light emitting chip 38 may be connected to the fourth metal layer 37-2 on the second support member 37 by a wire 39.

6 is a side cross-sectional view illustrating a light emitting device package according to a fourth embodiment.

Referring to FIG. 6, the light emitting device package 41 includes a light emitting chip 48 on the first support member 42, a sidewall member 44 around the light emitting chip 48, and the sidewall member 44. And a ceramic layer 45 on the light emitting chip 48.

The first support member 42 includes a silicon-based body or a conductive substrate. An insulating layer 42-1 is formed on the surface of the first supporting member 42, and a first metal layer 42-2 and a second metal layer 42-3 are formed on the insulating layer 42-1. Is placed. The light emitting chip 48 is disposed on the first metal layer 42-2 and electrically connected to the first metal layer 42-2 and the second metal layer 42-3. For example, the light emitting chip 48 may be bonded to the first metal layer 42-2 and connected to the second metal layer 42-3 by a wire 49.

The first metal layer 42-2 is disposed on a portion of the upper surface, the first side surface, and the lower surface of the first support member 42, and the second metal layer 42-3 is disposed on the first support member 42. The upper surface, the second side surface and the lower surface portion may be disposed.

The side surface of the first support member 42 may be formed as an inclined side surface, or may be formed as a vertical surface. A pn junction region, such as a zener diode, may be formed in the first support member 42, but is not limited thereto.

The side wall member 44 is disposed on the metal layers 42-2 and 42-3 of the first supporting member 42, and the first side wall portion 44-1 and the second side wall portion 44-2 are disposed on the metal layers 42-2 and 42-3. Include. A ceramic layer 45 is formed between the first side wall portion 44-1 and the second side wall portion 44-2, and the ceramic layer 45 includes the first side wall portion 44-1 and the second side wall portion 44-1. It is formed on the side wall part 44-2.

At least one of the first hole 44A and the second hole 44B disposed on the light emitting chip 48 may be empty or a light transmissive material may be disposed.

7 is a side cross-sectional view illustrating a light emitting device package according to a fourth embodiment.

Referring to FIG. 7, the light emitting device package 51 includes a first support member 52, a light emitting chip 58, a sidewall member 54, and a ceramic layer 55 on the first support member 52. .

The first support member 52 may include a recess 52A having an open upper portion, and the side surface of the recess 52A may be an inclined surface or a vertical surface. A bottom of the recess 52A includes a first lead portion 52-1 and a second lead portion 52-2, and includes the first lead portion 52-1 and the second lead portion 52. -2) may be disposed on the same plane as the side surface of the first support member 52 or protrude from the side surface of the first support member 52.

The light emitting chip 58 may be disposed on the first lead portion 52-1, and the light emitting chip 58 may be connected to the second lead portion 52-2 by a wire 59. The light emitting chip 58 may be connected to the first lead portion 52-1 and the second lead portion 52-2 by a wire 59 or a flip method.

The side wall member 54 includes a first side wall portion 54-1 and a second side wall portion 54-2, and the ceramic layer 55 includes the first side wall portion 54-1 and the second side wall portion 54-1. It may be disposed between the side wall portion 54-2 and above the recess 52A.

The first hole 54A between the first side wall portion 54-1 may be connected to the recess 52A. The second hole 54B, which is an upper region of the ceramic layer 55, may include, but is not limited to, a translucent resin layer and / or a lens.

8 is a view showing another example of the side wall member in the embodiment. Components below the sidewall member will be referred to the above embodiments.

Referring to FIG. 8, the side wall member 64 arranges the protrusion 64-3 between the first side wall portion 64-1 and the second side wall portion 64-2, and the protrusion 64-3. Protrudes from the first side wall portion 64-1. The protrusion 64-3 may be disposed between the first side wall portion 64-1 and the second side wall portion 64-2, and may have the same thickness as that of the ceramic layer 65.

The ceramic layer 65 includes a hole 65-1 and the hole 65-1 is inserted into the protrusion 64-3. Accordingly, the ceramic layer 65 is coupled between the first side wall portion 64-1 and the second side wall portion 64-2. The configuration of the side wall member 64 and the ceramic layer 65 may be selectively applied to the above embodiment, but is not limited thereto.

The side wall member 64 includes a first hole 64A and a second hole 64B above the ceramic layer 65.

9 is a side cross-sectional view illustrating a light emitting device package according to a fifth embodiment.

Referring to FIG. 9, the light emitting device package 71 includes a first support member 72, a light emitting chip 78 on the first support member 72, and a sidewall member disposed around the light emitting chip 78. 74, a ceramic body layer 75 coupled to the sidewall member 74 and disposed on the light emitting chip 78.

The first support member 72 includes a first metal layer 72-1, a second metal layer 72-2, a first connection member 72-3, a second connection member 72-4, and a first lead. The part 72-5 and the second lead part 72-6 are included. The light emitting chip 78 is mounted on the first metal layer 72-1.

Coupling grooves 72-7 may be disposed on the first support member 72, and the coupling grooves 72-7 may have a trench structure.

The width of the first support member 72 may be equal to or wider than the width of the sidewall member 74, but is not limited thereto.

The side wall member 74 includes a first side wall portion 74-1 and a second side wall portion 74-2, and a protrusion 74-3 protrudes below the first side wall portion 74-1. The protrusion 74-3 may be coupled to the coupling groove 72-7 of the first support member 72.

A ceramic layer 75 is formed between the first side wall portion 74-1 and the second side wall portion 74-2 of the first support member 74, and the ceramic layer 75 is formed of the light emitting chip ( 78) placed above.

The ceramic layer 75 may be exposed to the outer side surface of the side wall member 74, but is not limited thereto. The first hole 74A of the sidewall member 74 disposed below the ceramic layer 5 may be empty or formed of a light transmitting material. The second hole 74B of the sidewall member 74 disposed on the ceramic layer 5 may be empty, or a transparent resin layer and / or a lens may be disposed, but the embodiment is not limited thereto.

10 is another example of the first support member in the embodiment.

Referring to FIG. 10, in the first support member 82, a plurality of light emitting chips 88 may be disposed on the first metal layer 82-1, and the plurality of light emitting chips 88 may include the second metal layer ( 82-2) and the wire 89 may be connected. The plurality of light emitting chips 88 may be connected in parallel or connected in series, but is not limited thereto. The first support member 82 may be applied in the same structure as the second support member of FIG. 1, but is not limited thereto.

11 is a view showing a light emitting device package according to a sixth embodiment.

Referring to FIG. 11, the light emitting device package 91 may be formed on a first support member 92, a plurality of second support members 97 and 97A spaced apart from each other, and a plurality of second support members 97 and 97A. The light emitting chip 98 is coupled to the sidewall member 94 and the sidewall member 94 between the light emitting chip 98, an upper circumference of the first support member 92, and the plurality of second support members 97 and 97A. A ceramic layer 95 disposed on 98.

The second support members 97 and 97A are disposed at different regions of the upper surface of the first support member 92, and the sidewall member 94 is formed around each of the second support members 97 and 97A. Is placed.

The light emitting chip 98 is mounted on each of the supporting members 97 and 97A and connected to the wire 99.

The sidewall member 94 is disposed around the light emitting chip 98 disposed on the second support members 97 and 97A. The sidewall member 94 is disposed between the second support members 97 and 97A, and the sidewall member 94 may block interference between light generated from the light emitting chips 98 in different regions. The side wall member 94 between the second support members 97 and 97A may not be formed, but is not limited thereto.

The ceramic layer 95 is disposed between the first side wall portion 94-1 and the second side wall portion 94-2 of the side wall member 94, and a phosphor is added to the ceramic layer 95. The ceramic layer 95 may be disposed on the plurality of second support members 97, and phosphors of the same type may be disposed.

The first hole 94A disposed under the ceramic layer 95 may be formed of an empty or other light transmitting material. The second hole 94B disposed on the ceramic layer 95 may be empty or a transparent resin layer or a lens may be disposed.

The light emitting device package 91 may be divided into a light emitting region of the light emitting chip 8 into a first light emitting portion 91A and a second light emitting portion 91B, and the first and second light emitting portions 91A, The side wall member 94 is arrange | positioned between 91B.

12 and 13 illustrate a manufacturing process of the light emitting device package of FIG. 1.

Referring to FIG. 12, a plurality of second supporting members 17 are disposed in the unit T1 area among the upper surface areas of the first supporting member 12.

The plurality of second supporting members 17 are spaced apart from each other, and the light emitting chips 18 are disposed on the upper surfaces thereof. The second support member 17 may be formed of a high temperature co-fired ceramic (HTCC) or a low temperature co-fired ceramic (LTCC) substrate, a silicon material, or a resin substrate. .

The side wall members 14 are disposed around the second support members 17, respectively.

Here, the translucent ceramic layer 15 having the phosphor participated is disposed in the sidewall member 14.

In the manufacturing process of the side wall member 14 and the ceramic layer 15, after the first side wall portion 14-1 is baked at a predetermined temperature using a ceramic material, the first side wall portion 14-1 is formed. The ceramic layer 15 is fired at a predetermined temperature thereon. The second side wall portion 14-2 is fired on the ceramic layer 15 at a predetermined temperature. The side wall member 14 and the ceramic layer 15 may be formed of a substrate made of high temperature co-fired ceramic (HTCC). The side wall member 14 and the ceramic layer 15 may be formed of a metal oxide, for example, Al ₂ O ₃ . In the sidewall member 14, for example, TIO ₂ may be added as a reflective material or a high refractive index material. At least one kind of phosphor may be added in the ceramic layer 15, but is not limited thereto.

In this case, the first side wall portion 14-1 is sequentially stacked with a plurality of green sheets having a circular or polygonal shape, and then fired and bonded at a predetermined temperature. The second side wall portion 14-2 sequentially stacks one or more green sheets having the same shape as the structure of the first side wall portion 14-1, and then couples the sheet at predetermined temperatures. Accordingly, the first side wall portion 14-1 and the second side wall portion 14-2 may have a ceramic multilayer structure.

The second support member 7 may be formed of ceramic, for example, AlN.

Referring to FIG. 13, the side wall member 14 is attached to the first support member 12 by an adhesive member 13. The adhesive member 13 may be an insulating or conductive tape or an adhesive.

When the sidewall member 14 is disposed, the sidewall member 14 is cut at intervals of the size T4 of the individual light emitting device packages to be used as individual packages. Here, the individual packages may be cut into one or more package units, but is not limited thereto.

Accordingly, in the light emitting device package, as shown in FIG. 1, the second support member 17 and the sidewall member 14 are disposed on the first support member 12, and the light emitting chip 18 is disposed on the second support member 17. ) And the ceramic layer 15 to which the phosphor is added may be disposed.

<Light Emitting Chip>

The light emitting chip according to the embodiment will be described with reference to FIGS. 14 and 15.

Referring to FIG. 14, in the light emitting chip 18, an ohmic layer 121 is formed under the light emitting structure 110, a reflective layer 124 is formed under the ohmic layer 121, and under the reflective layer 124. The support member 125 may be formed on the passivation layer, and a protective layer 123 may be formed around the reflective layer 124 and the light emitting structure 110.

The light emitting chip 18 forms an ohmic layer 121, a channel layer 123, a reflective layer 125, and a support member 125 under the second conductive semiconductor layer 115, and then removes the growth substrate. Can be formed.

The ohmic layer 121 is in ohmic contact with the lower layer of the light emitting structure 110, for example, the second conductive semiconductor layer 115, and the material may be selected from a metal oxide, a metal nitride, an insulating material, and a conductive material. Indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide), antimony tin oxide (ATO), gallium zinc oxide (GZO), Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf and any combination of these Can be formed. In addition, the metal material and the light transmitting conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, and ATO can be used in a multilayer structure. For example, IZO / Ni, AZO / Ag, IZO / / Ag / Ni or the like. An inside of the ohmic layer 121 may further include a layer blocking current so as to correspond to the electrode 116.

The protective layer 123 may be selected from a metal oxide or an insulating material, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZAO), or IGZO. (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ . The protective layer 123 may be formed using a sputtering method or a deposition method, and may prevent a metal such as the reflective layer 124 from shorting the layers of the light emitting structure 110.

The reflective layer 124 may be formed of a material including metals such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and optional combinations thereof. The reflective layer 124 may be formed larger than the width of the light emitting structure 110, which may improve the light reflection efficiency.

The support member 125 is a base substrate and is a metal such as copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper-tungsten (Cu-W) or a carrier wafer (eg, Si, Ge, GaAs, ZnO, SiC). A bonding layer may be further formed between the support member 125 and the reflective layer 124, and the bonding layer may bond the two layers to each other. The disclosed light emitting chip is one example and is not limited to the features disclosed above. The light emitting chip may be selectively applied to the above embodiment of the light emitting device, but is not limited thereto.

Referring to FIG. 15, the light emitting chip 28 may include a substrate 111, a buffer layer 112, a first conductive semiconductor layer 113, an active layer 114, a second conductive semiconductor layer 115, and a first electrode. 116, and a second electrode 117. The first conductive semiconductor layer 113, the active layer 114, and the second conductive semiconductor layer 115 may be defined as the light emitting structure 110.

The substrate 111 may be a light transmissive, insulating substrate, or a conductive substrate, for example, a sapphire substrate (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP, InP, Ga ₂ O ₃ , and GaAs Can be selected from. The substrate 111 may be a growth substrate, and has a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1) on the growth substrate. It can be grown into a semiconductor.

The buffer layer 112 is a layer for alleviating the difference in lattice constant between the substrate 111 and the semiconductor, and may be formed of a group 2 to group 6 compound semiconductor. An undoped group III-V compound semiconductor layer may be further formed on the buffer layer 112, but is not limited thereto.

A first conductive semiconductor layer 113 is formed on the buffer layer 112, an active layer 124 is formed on the first conductive semiconductor layer 113, and a second conductive semiconductor layer is formed on the active layer 124. 115 is formed.

The first conductive semiconductor layer 113 is a compound semiconductor of Group III-V elements doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like can be selected. When the first conductive type is an N type semiconductor, the first conductive type dopant includes an N type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductive semiconductor layer 114 may be formed as a single layer or a multilayer, but is not limited thereto.

The active layer 114 may be formed of a single quantum well structure, a multiple quantum well structure, a quantum line structure, or a quantum dot structure. The active layer 114 may be formed with a period of a well layer and a barrier layer, for example, an InGaN well layer / GaN barrier layer or an InGaN well layer / AlGaN barrier layer, using a compound semiconductor material of Group III-V group elements. have.

A conductive clad layer may be formed on or under the active layer 114, and the conductive clad layer may be formed of an AlGaN-based semiconductor.

The second conductive semiconductor layer 115 is formed on the active layer 114, and the second conductive semiconductor layer 115 is a compound semiconductor of a group III-V group element doped with a second conductive dopant. GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like. When the second conductive type is a P type semiconductor, the second conductive type dopant includes a P type dopant such as Mg and Ze. The second conductive semiconductor layer 115 may be formed as a single layer or a multilayer, but is not limited thereto.

In addition, a third conductive semiconductor layer, for example, an N-type semiconductor layer, may be formed on the second conductive semiconductor layer 115. The light emitting structure 135 may have at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.

A current spreading layer may be formed on the second conductive semiconductor layer 115, and the current spreading layer may be a transparent conductive layer, for example, indium tin oxide (ITO), indium zinc oxide (IZO), and indium zinc tin oxide (IZTO). ), Selectively formed from indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO) Can be.

The first electrode 116 may be formed on the first conductive semiconductor layer 113, and the second electrode 117 may be formed on the second conductive semiconductor layer 115. The first electrode 116 and the second electrode 117 may be connected to a metal layer of another support member through a wire.

<Lighting system>

The light emitting device of the embodiment (s) disclosed above is a structure in which a light emitting chip is packaged, and a plurality of light emitting devices may be disposed on a board and provided to a lighting system such as a light emitting module or a light unit. The light emitting device selected from the above embodiments may be applied to a lighting system.

The light emitting device according to the embodiment may be applied to the light unit. The light unit includes a structure in which a plurality of light emitting elements are arranged, and includes a display device as shown in FIGS. 16 and 17 and a lighting device as shown in FIG. 18, and may include a lighting lamp, a traffic light, a vehicle headlamp, an electric signboard, and the like. have.

16 is an exploded perspective view of a display device according to an exemplary embodiment.

Referring to FIG. 16, the display apparatus 1000 according to the embodiment includes a light guide plate 1041, a light emitting module 1031 that provides light to the light guide plate 1041, and a reflective member 1022 under the light guide plate 1041. ), An optical sheet 1051 on the light guide plate 1041, a display panel 1061, a light guide plate 1041, a light emitting module 1031, and a reflective member 1022 on the optical sheet 1051. The bottom cover 1011 may be included, but is not limited thereto.

The bottom cover 1011, the reflective member 1022, the light guide plate 1041, and the optical sheet 1051 may be defined as a light unit 1050.

The light guide plate 1041 diffuses light to serve as a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

The light emitting module 1031 may include at least one, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 1031 may include a substrate 1033 and a light emitting device package 11 according to the exemplary embodiment disclosed above, and the light emitting device package 11 may be arranged on the substrate 1033 at predetermined intervals. have.

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device package 11 is mounted on the side surface of the bottom cover 1011 or the heat dissipation plate, the substrate 1033 may be removed. Here, a part of the heat dissipation plate may contact the upper surface of the bottom cover 1011.

In addition, the plurality of light emitting device packages 11 may be mounted on the substrate 1033 such that an emission surface from which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device package 11 may directly or indirectly provide light to a light incident portion, which is one side of the light guide plate 1041, but is not limited thereto.

The reflection 1022 may be disposed under the light guide plate 1041. The reflective member 1022 may improve the luminance of the light unit 1050 by reflecting light incident to the lower surface of the light guide plate 1041 and pointing upward. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may accommodate the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be combined with the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. The display device 1000 may be applied to various portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light transmissive sheet. The optical sheet 1051 may include at least one of a sheet such as, for example, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses the incident light, the horizontal and / or vertical prism sheet focuses the incident light into the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 1031, but are not limited thereto.

17 is a diagram illustrating a display device according to an exemplary embodiment.

Referring to FIG. 17, the display device 1100 includes a bottom cover 1152, a substrate 1120 on which the light emitting device package 11 disclosed above is arranged, an optical member 1154, and a display panel 1155. .

The substrate 1120 and the light emitting device package 11 may be defined as a light emitting module 1060. The bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit.

The bottom cover 1152 may include an accommodating part 1153, but is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, the horizontal and vertical prism sheets focus the incident light onto the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness.

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, condensing, etc. of the light emitted from the light emitting module 1060.

18 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 18, the lighting device 1500 includes a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, for example, may be formed of a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device package 11 according to an embodiment mounted on the substrate 1532. The plurality of light emitting device packages 11 may be arranged in a matrix form or spaced apart at predetermined intervals.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrates and the like.

In addition, the substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white or silver, in which the light is efficiently reflected.

At least one light emitting device package 11 may be mounted on the substrate 1532. Each of the light emitting device packages 11 may include at least one light emitting diode (LED) chip. The LED chip may include a colored light emitting diode emitting red, green, blue or white colored light, and a UV emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 11 to obtain color and brightness. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

11,21,31,41,51,61,71,91: light emitting device package
12,22,32,42,52,72,82,92: first support member
14, 24, 34, 44, 54, 64, 74, 94: side wall member
17,27,37,97: second support member
18,28,38,48,58,78,98: light emitting chips
15,25,35,45,55,65,75,95: ceramic layer

Claims (18)

A first support member having a first metal layer and a second metal layer;
A second support member electrically connected to the first metal layer and the second metal layer of the first support member, the second support member disposed on a first area of the upper surface of the first support member;
A light emitting chip disposed on the second support member;
A side wall member having a hole wider than the width of the second support member and including a first side wall portion disposed around the second support member and a second side wall portion disposed on the first side wall portion; And
And a ceramic layer including an outer portion coupled between the first side wall portion and the second side wall portion of the sidewall member, and an inner portion connected to the outer portion and spaced apart from the light emitting chip on the light emitting chip. A first support member having a first metal layer and a second metal layer;
A light emitting chip disposed on the first support member and electrically connected to the first metal layer and the second metal layer;
A side wall member having a hole therein and including a first side wall portion disposed around an upper surface of the first support member and a second side wall portion disposed on the first side wall portion; And
And a ceramic layer including an outer portion coupled between the first side wall portion and the second side wall portion of the sidewall member, and an inner portion connected to the outer portion and spaced apart from the light emitting chip. The light emitting device package of claim 1, wherein the first side wall portion of the side wall member has a thickness thicker than that of the second support member. The light emitting device package of claim 1, further comprising a recess having a depth lower than an upper surface of the first support member, wherein at least a portion of the second support member is inserted into the recess. The light emitting device package of claim 2, further comprising a recess having a lower depth than an upper surface of the first support member, wherein the light emitting chip is disposed in the recess. According to claim 1, Coupling protrusion protruding below the side wall member; And a coupling groove coupled to the coupling protrusion around an upper surface of the first support member. The method of claim 1, further comprising: a projection between the first side wall portion and the second side wall portion; And a hole formed in the ceramic layer to insert the protrusion. The light emitting device package of claim 1, wherein the sidewall member comprises a ceramic material. The light emitting device package of claim 8, wherein the sidewall member comprises a first metal oxide having a first refractive index and a second metal oxide added in the first metal oxide and having a second refractive index higher than the first refractive index. The light emitting device package of claim 8, further comprising a phosphor added in the ceramic layer. The light emitting device package of claim 10, further comprising a low reflection coating layer on a lower surface of the ceramic layer. The light emitting device package of claim 1, further comprising an adhesive member between the sidewall member and the first support member. The light emitting device package of claim 8, wherein the second side wall portion has a thickness thinner than a thickness of the first side wall portion. The light emitting device package of claim 10, further comprising at least one of a light-transmissive resin layer and a lens formed on the ceramic layer. The light emitting device package of claim 1, wherein the second support member comprises a ceramic series having a connection member therein. According to claim 1 or claim 2, wherein the first support member comprises a resin-based, ceramic-based and silicon-based, the first lead portion and the second connected to the first metal layer on the lower surface of the first support member A light emitting device package comprising a second lead portion connected to the metal layer. The light emitting device package of claim 9, wherein the first metal oxide and the ceramic layer of the sidewall member are formed of the same material. The light emitting device package of claim 17, wherein the ceramic layer is Al ₂ O ₃ and the second metal oxide is TiO ₂ .

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