KR20130028218A - Wavelengh conversion structure, manufacturing methods thereof, and lighting emitting device including the wavelength conversion structure - Google Patents

Wavelengh conversion structure, manufacturing methods thereof, and lighting emitting device including the wavelength conversion structure Download PDF

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Publication number
KR20130028218A
KR20130028218A KR1020110091598A KR20110091598A KR20130028218A KR 20130028218 A KR20130028218 A KR 20130028218A KR 1020110091598 A KR1020110091598 A KR 1020110091598A KR 20110091598 A KR20110091598 A KR 20110091598A KR 20130028218 A KR20130028218 A KR 20130028218A
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South Korea
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section
layer
material layer
fluorescent
refractive index
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KR1020110091598A
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Korean (ko)
Inventor
민-순 시에
이-주이 추앙
멩-유안 홍
밍-치 슈
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에피스타 코포레이션
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Priority to KR1020110091598A priority Critical patent/KR20130028218A/en
Publication of KR20130028218A publication Critical patent/KR20130028218A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder

Abstract

PURPOSE: A wavelength conversion structure, a manufacturing method thereof, and a lighting emitting device including the wavelength conversion structure are provided to prevent the light of a fluorescence layer from being directly absorbed into an LED chip. CONSTITUTION: A fluorescence layer(102) includes a first region(105) and a second region(106). The second region is formed on the first region. A first material layer(103) is formed in the space of the first region. A second material layer(104) is formed in the space of the second region.

Description

WAVELENGH CONVERSION STRUCTURE, MANUFACTURING METHODS THEREOF, AND LIGHTING EMITTING DEVICE INCLUDING THE WAVELENGTH CONVERSION STRUCTURE}

The present invention relates to a wavelength conversion structure and a method of manufacturing the same, and more particularly to a wavelength conversion structure having a high light extraction efficiency (Light Extraction Efficiency) and a method of manufacturing the same.

In recent years, the energy problem is becoming more and more important, and various new types of energy saving lighting fixtures are being developed. Among them, light emitting diodes (LEDs) are very promising next-generation luminaires because they have high luminous efficiency, low electric consumption, mercury-free, and long service life.

Speaking of white light LED for lighting, it operates by matching LED chip and fluorescent powder, using blue light generated on blue LED chip, and excitation of yellow fluorescent powder by YAG (Yttrium Aluminum Garnet, Y 3 Al 5 O 12 ) Yellow light is generated, and blue light and yellow light are mixed again to form white light.

Here, the general fluorescent powder coating method includes two types of conformal coating (conformal coating) and separation phosphorescent (romote phosphor). The conformal coating coats the fluorescent powder directly on the LED chip to form a fluorescent layer. Since the coating directly on the LED chip, the present method has the advantage that the fluorescence powder thickness is relatively uniform. However, since the LED chip and the support plate absorb light emitted from the fluorescent layer, the overall luminous efficiency is lowered. In addition, since the fluorescent powder is in direct contact with the LED chip, when the LED chip is operated, a high temperature of 100 ° C. to 150 ° C. is generated, and the fluorescent layer gradually deteriorates and affects the conversion efficiency.

The separate fluorescence method is to solve the problems in the above-described conformal coating. In this method, since the fluorescence layer of the LED light emitting device is separated from the LED chip, the light emitted from the fluorescence layer is directly transmitted by the LED chip. It can prevent the absorption as much as possible. In addition, since the fluorescent layer is installed in a manner that is spaced apart from the LED chip, the fluorescent component of the fluorescent layer is not easily degraded due to the high temperature generated during the operation of the LED chip.

The fluorescent particles absorb light from the LED chip and are then excited to produce light of a different color. However, the light rays generated by the excitation of the fluorescent powder particles are directed in all directions, and include light rays transmitted therein, and since the refractive index of the package resin and the fluorescent powder is not the same, total reflection easily occurs, thereby reducing luminous efficiency. .

An object of the present invention is to provide a wavelength conversion structure, a method of manufacturing the same, and a light emitting device for solving the above problems.

A wavelength conversion structure according to an embodiment of the present invention includes a first section and a second section, the second section is located on the first section, the fluorescent layer having a space in the first section and the second section; A first material layer formed in the space of the first section of the fluorescent layer; And a second material layer formed in the space of the second section of the fluorescent layer.

 In one embodiment, a wavelength conversion structure includes a first material layer and a second material layer disposed on the first material layer, and a plurality of fluorescent particles distributed in the first material layer and the second material layer. It includes.

 According to another aspect of the present invention, there is provided a method of fabricating a wavelength conversion structure, the method comprising: providing a substrate; Forming a fluorescent layer including a first section and a second section on the substrate, wherein a second section is disposed on the first section and has a space in the first section and the second section; Forming a first material layer in a space of the first section; And forming a second material layer in the space of the second section.

A light emitting device according to another embodiment of the present invention, a carrier plate; A light emitting element provided on the carrier plate; A first light guide layer surrounding the light emitting element and provided on the carrier plate; A wavelength conversion structure disposed on the first light guide layer, the wavelength conversion structure comprising: a conductive substrate; A fluorescent layer comprising a first section and a second section, wherein the first section is located on the first light guide layer, the second section is located on the first section, and has a space in the first section and the second section; A first material layer formed in a space of a first section of the fluorescent layer; And a second material layer formed in the space of the second section of the fluorescent layer.

According to the present invention, the light emitted from the fluorescent layer is prevented from being directly absorbed by the light emitting diode chip, and the fluorescent component of the fluorescent layer is not degraded due to the high temperature generated in the light emitting diode chip, and the total reflection phenomenon is effectively reduced to emit light. It is possible to provide a light emitting device that increases the efficiency.

1 is a schematic diagram showing a wavelength conversion structure according to a first embodiment of the present invention.
2 is a schematic view showing a state in which a first material layer is plated in a first section of the wavelength conversion structure.
3 is a schematic view showing a state where the upper surface of the second material layer filling the second section is higher than the upper surface of the fluorescent layer.
4 shows an SEM image of a fluorescent layer of a wavelength conversion structure.
5 is an SEM photograph of the first material layer plated on the fluorescent layer.
6 is a SEM photograph of a second material layer located on top of the first material layer.
7 is a schematic view showing the package structure of the fluorescent powder of the present invention.

The preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. The above-exemplified embodiments are intended to enable those skilled in the art to understand the spirit of the present invention. The present invention is not limited to the above illustrated embodiment, and other methods may be used. In the drawings herein, the width, length, thickness and other similar sizes can be readily described by enlarging as needed. Like reference numerals in the drawings denote like elements.

 It should be further noted here that the manner in which an element or material layer of the present disclosure is installed or connected on another element or another material layer may be directly installed or connected on another element or another material layer or on another element or other material layer. It may be indirectly installed or connected on top of one another to insert another element or layer of material therebetween. On the contrary, when the device or material layer is described herein as being installed or connected directly on another device or other material layer, it means a case where no other device or material layer is provided between the two.

1 is a schematic diagram of a wavelength conversion structure according to a preferred embodiment of the present invention. The wavelength conversion structure 10 includes a conductive substrate 101, a fluorescent powder layer 102, a first material layer 103, and a second material layer 104. The fluorescent layer 102 is formed on the conductive substrate 101, is composed of fluorescent powder particles, and there is a space between the fluorescent powder particles. The fluorescent layer 102 includes a first section 105 and a second section 106, wherein the first section 105 is positioned above the conductive substrate 101, and the second section 106 is formed of the first section 105 and the second section 106. It is located above the first section 105. The thickness of the first section 105 and the second section 106 and the thickness of the fluorescent layer 102 are the same. The first material layer 105 is positioned on the conductive substrate 101, and the first material layer 105 injects an inorganic compound into the space of the first section 103, so that the thickness of the fluorescent layer 102 is reduced. A film layer smaller than the thickness is formed. The second material layer 104 is positioned above the first material layer 103, and is formed by injecting an adhesive into the space of the second section 106 of the fluorescent layer.

The conductive substrate 101 has a transparent conductive property, and the material includes, but is not limited to, a transparent conductive inorganic compound (TCO). The fluorescent layer 102 is formed on the conductive substrate 101, and the material configuration includes, but is not limited to, a yellow light ceramic fluorescent material. The particle diameter of the fluorescent powder particles of the fluorescent powder layer 102 is 225 nm to 825 nm, and there is a space between the fluorescent powder particles. The fluorescent layer 102 includes a first section 105 and a second section 106, the thickness of the first section 105 being smaller than the thickness of the fluorescent section 102, and the first section 105. And the thickness ratio of the fluorescent layer 102 is between 0.5 and 1.9. The thickness of the second section 106 is equal to the thickness of the fluorescent layer 102 minus the thickness of the first section 105.

As shown in FIG. 2, the first compound layer 103 is formed by injecting an inorganic compound into the space of the fluorescent powder particles in the first section 105. Materials of the inorganic compound include metal oxides such as zinc oxide (ZnO), aluminum oxide (Al 2 O 3 ), indium tin oxide (ITO), aluminum zinc oxide (AZO), or indium gallium zinc oxide (InGaZnO, IGZO). However, this is not limitative. When the yellow light ceramic fluorescent powder is the fluorescent powder layer 102 material, the refractive index is about 2, and the inorganic compound material is preferably selected from a material having a similar refractive index. For example, when zinc oxide (ZnO) is selected as the inorganic compound material, its refractive index is about 1.8 to 2. The refractive indices of the first material layer 103 and the fluorescent layer 102 are similar to each other, and the refractive indices of the materials are different from each other, thereby effectively reducing the loss of luminous efficiency. In addition, the inorganic compound material injected between the fluorescent powder particles acts to increase the mechanical strength of the fluorescent powder layer 102 as an adhesive.

Referring to the wavelength conversion structure 10 of FIG. 1, an adhesive is injected into the space of the second section 106 of the fluorescent layer 102 to form the second material layer 104. The material composition of the second material layer 104 includes, but is not limited to, silica gel having a refractive index of about 1.45. The adhesive of this embodiment is silica gel, but other materials may be used in other embodiments. For example, glass (refractive index is 1.5 to 1.9), resin (Resin, refractive index is 1.5 to 1.6), titanium oxide (Titanium Oxide, TiO 2 , refractive index is 2.2 to 2.4), silicon oxide (Silicon Oxide, SiO 2) , The refractive index is 1.5 to 1.7), or magnesium fluoride (Magnesium Fluoride, MgF, the refractive index is 1.38) and the like. The second material layer 104 may include an organic compound or an inorganic compound, and its refractive index is about 1.3 to 1.6.

As shown in FIG. 3, the thickness of the second section 106 is equal to the thickness of the fluorescent layer 102 minus the thickness of the first section 105. In another embodiment, the thickness of the second material layer 104 is greater than the thickness of the second section 106, and the top surface 124 of the second material layer 104 is formed from the top surface of the fluorescent layer 102. It is higher than 126 and can make the surface of the wavelength conversion structure 10 flatter.

Next, the manufacturing method of the wavelength conversion structure 10 of this embodiment is demonstrated. First, the conductive substrate 101 is placed in an electrophoretic device. The conductive substrate 101 may be ITO glass. Phosphor particles are deposited on the surface of the ITO glass by electrophoresis to form a phosphor layer 102.

4 shows an SEM photograph. The fluorescent layer 102 of the present embodiment is a material for converting the wavelength of incident light, for example, a fluorescent material (Phosphor). The technique of depositing the fluorescent layer 102 is not limited to the electrophoresis method, and may be another method capable of depositing a fluorescent material such as gravity sedimentation. Then, a transparent inorganic compound (for example, zinc oxide) is injected into the space of the first section 105 of the fluorescent layer 102 by the electroplating method to form the first material layer 103. By injecting a transparent oxide having a similar fluorescence refractive index, the loss due to scattering of light can be reduced, thereby increasing the light emission efficiency of white light.

As shown in the SEM photograph of FIG. 5, the inorganic compound may increase the mechanical strength of the fluorescent layer 102 with an adhesive of fluorescent particles. The deposition thickness of the first material layer 103 may be adjusted differently according to the fluorescent particles and / or the space size. The method of forming the first material layer 103 is not limited to electroplating, and may include a method of plating an inorganic compound into a space of a fluorescent part, for example, a CVD method or a sol-gel method. to be.

As shown in the SEM photograph of FIG. 6, the second section 106 of the fluorescent layer 102 is completely filled using the method of filling the gel. Filling the gel is a method commonly used by those of ordinary skill in the art, the detailed description thereof will be omitted. The wavelength converting structure 10 has a generally uniform or nonuniform thickness.

7 is a schematic view showing a light emitting device according to a preferred embodiment of the present invention. The light emitting device 20 includes a package substrate 111, a light emitting diode 110, a support frame 112, a light guide layer 113, and a wavelength conversion structure 10. The light emitting diodes 110 are positioned on the package substrate 111. The light guide layer 113 covers the package substrate 111 and the light emitting diodes 110. The light emitting device 20 includes the same wavelength converting structure 10 as the above embodiment, wherein the wavelength converting structure 10 and the light emitting diode 110 are separated by a support frame 112 so that the fluorescence component is Since it is not in direct contact with the light emitting diodes 110, it is possible to prevent the light emitted from the fluorescent layer from being directly absorbed by the light emitting diodes 110 chip. In addition, since the fluorescent powder is installed in a manner away from the LED chip 110, the fluorescent powder of the fluorescent layer does not deteriorate due to the high temperature generated when the LED chip 110 operates.

The light guide layer 113 of the present embodiment is a light passing layer and has a material layer for enhancing light extraction efficiency. In the present embodiment, the light guide layer 113 has a plurality of material layers, and has a gradient refractive index (GRIN). In this embodiment, the plurality of material layers of the light guide layer 113 has a refractive index n a = 1.95 a nitride silicon (Silicon Nitride, Si 3 N 4), the refractive index n b = 1.7 of aluminum (Aluminum Oxide, Al 2 O 3 oxide ), And a silica gel (Silicone) having a refractive index n c = 1.45, but in other embodiments, other materials may be used in combination. By using a small difference in refractive index between the layers, the gradient refractive index layer having a smaller refractive index as far away from the light emitting diode 110 can effectively lower the total reflection phenomenon of the light beam. Materials used include glass (refractive index of 1.5 to 1.9), resin (resin, refractive index of 1.5 to 1.6), diamond like carbon (DCL, refractive index of 2.0 to 2.4), titanium oxide ((Titanium Oxide) , TiO 2 , the refractive index is 2.2 to 2.4, silicon oxide (Silicon Oxide, SiO 2 , the refractive index is 1.5 to 1.7), or magnesium fluoride (Magnesium Fluoride; MgF, the refractive index is 1.38) and the like. In the present embodiment, the light emitting diode 110 may use a GaN blue light LED chip, and its refractive index is 2.4. Therefore, the total reflection phenomenon of the light beam is made by reducing the difference in refractive index between layers by the stacked gradient refractive index. Can be effectively lowered.

In the light emitting device 20 according to the present embodiment, the wavelength conversion structure 10 as in the above embodiment is installed on the light guide layer 113, and after light is emitted from the light emitting diode 110, the light guide layer 113 is removed. Enters the wavelength converting structure 10 and enters the second material layer 104 having a relatively low refractive index through the plurality of material layers included in the light guiding layer 113, and then the fluorescent layer 102 and The first material layer 103 having a similar fluorescence content and refractive index enters. Since the difference in refractive index is relatively small, the loss of light due to total reflection can be effectively reduced. The refractive index of the inorganic compound and the fluorescent particles is similar, so that light can reduce scattering between the fluorescent particles. The light emitting device 20 according to the present embodiment has a flat plate-shaped package structure. In other embodiments, the conductive substrate 101 of the wavelength conversion structure 10 is not limited to a flat plate, and a convex lens, a concave lens, or the like. It may have a triangular pyramid or the like, and the surface of the conductive substrate 101 may be a flat surface, a curved surface, or a refractive surface.

 Table 1 shows the results of testing the light intensity of the light emitting device having the wavelength conversion structure 10 according to the embodiment of the present invention, which is the injection of only the silica gel into the space of the fluorescent layer 102 and space of the fluorescent layer 102 The optical efficiencies of the inorganic compounds ITO, silica gel and zinc oxide materials were compared. As can be seen from the results of this test, when only the silica gel was spray-coated without adding an inorganic compound in the space of the fluorescent layer 102, the luminous efficiency was 32.15 Lumen / Watt. When the zinc oxide, silica gel, and ITO material were placed in the space of the fluorescent layer 102, the luminous efficiency was 35.9-36.8 Lumen / Watt, and when the zinc oxide was electroplated for 45 minutes, the luminous efficiency was 35.9 Lumen. / Watt, and when the zinc oxide was electroplated for 90 minutes, the luminous efficiency was 36.8 Lumen / Watt. The wavelength conversion structure 10 in which the inorganic compound zinc oxide and silica gel are mixed in the present embodiment has a light emission intensity of about 14% higher than that in the case where the inorganic compound is not mixed. The luminous efficiency of zinc oxide electroplated for 90 minutes is higher than the luminous efficiency of zinc oxide electroplated for 45 minutes, and the results are shown in the table below.

Comparison table of light emission efficiency of conventional split fluorescent package structure and light emission efficiency of light emitting device using wavelength conversion structure 10 Luminous Efficiency [Lumen / Watt] Luminous efficiency comparison (%) Spray coating of only silica gel, but not spray coating of ITO and ZnO 32.1521 Ref ZnO 90 minutes electroplating + silica gel + ITO 36.80457 14.47 ZnO 45 min electroplating + silica gel + ITO 35.909533 11.69

Although a preferred embodiment of the light emitting device of the present invention has been described above, the present invention is not limited to the above method, and a person having ordinary knowledge in the technical field to which the present invention belongs does not depart from the spirit and scope of the present invention. Modifications are all within the scope of the present invention.

10: wavelength conversion structure
101: conductive substrate
102: fluorescent layer
103: first material layer
104: second material layer
105: first section
106: the second section
110: light emitting diode
111: package substrate
112: support frame
113: light guide layer
20: light emitting device

Claims (20)

A fluorescence layer including a first section and a second section, wherein the second section is located on the first section and has a space in the first section and the second section;
A first material layer formed in a space of the first section of the fluorescent layer; And
A second material layer formed in a space of the second section of the fluorescent layer;
Wavelength converting structure comprising a. A first material layer and a second material layer located on the first material layer; And
And a plurality of fluorescent particles distributed in the first material layer and the second material layer. The method according to claim 1 or 2,
And a conductive substrate positioned on one side of the first material layer. The method according to claim 1 or 2,
Wherein said first material layer comprises an inorganic compound and said second material layer comprises an organic compound or an inorganic compound. 5. The method of claim 4,
The inorganic compound is a metal oxide and is selected from the group consisting of zinc oxide (ZnO), aluminum oxide (Al 2 O 3 ), indium tin oxide (ITO), aluminum zinc oxide (AZO), or indium gallium zinc oxide (IGZO). And at least one, wherein said second layer of material comprises silica gel or glass. The method according to claim 1 or 2,
Wherein the refractive index of the first material layer is between about 1.8 and 2 and the refractive index of the second material layer is between 1.3 and 1.6. The method of claim 1,
Wherein said fluorescent layer comprises a yellow fluorescent substance. The method of claim 1,
The thickness of the first section is a wavelength conversion structure, characterized in that 0.5 to 0.9 times the thickness of the fluorescent layer. The method of claim 1,
And the upper surface of the second material layer is higher than the upper surface of the fluorescent layer. The method of claim 3,
The surface of the substrate is a flat surface, curved surface, or refractive surface, the refractive index of the substrate is a wavelength conversion structure, characterized in that 1.7 to 2.0. The method of claim 1,
And a refractive index difference between the refractive index of the fluorescent layer and the first material layer is less than 0.3. The method of claim 3,
The refractive index of the substrate is a wavelength conversion structure, characterized in that less than the refractive index of the fluorescent layer. Providing a substrate;
Forming a fluorescent layer on the substrate, wherein the second section includes a first section and a second section, wherein the second section is disposed on the first section and has a space between the first section and the second section;
Forming a first material layer in the space of the first section; And
Forming a second material layer in the space of the second section
Method for producing a wavelength conversion structure comprising a. The method of claim 13,
And said fluorescence layer is formed on said substrate by electrophoresis or gravity settling. The method of claim 13,
The first material layer is formed by the electroplating method, chemical vapor deposition method, or sol-gel method to form a first material layer in the space of the fluorescent layer, the second material layer is a fill method (fill) It is formed using, The manufacturing method of the wavelength conversion structure characterized by the above-mentioned. The method of claim 13,
The thickness of the first material layer is a manufacturing method of the wavelength conversion structure, characterized in that 0.5 to 0.9 times the thickness of the fluorescent layer. The method of claim 13,
And the upper surface of the second material layer is higher than the upper surface of the fluorescent layer. The method of claim 13,
The refractive index of the substrate is a method of manufacturing a wavelength conversion structure, characterized in that less than the refractive index of the fluorescent layer. The method of claim 13,
And a difference between the refractive index of the fluorescent layer and the refractive index of the first material layer is less than 0.3. Carrier plate;
A light emitting element provided on the carrier plate;
A first light guide layer surrounding the light emitting element and disposed on the carrier plate; And
A wavelength conversion structure adjacent to the first light guide layer,
The wavelength conversion structure,
And a first section and a second section, wherein the first section is located on the first light guide layer, the second section is located on the first section, and is spaced in the first section and the second section. A fluorescent layer;
A first material layer formed in a space of the first section of the fluorescent layer; And
A second material layer formed in a space of the second section of the fluorescent layer;
Light emitting device comprising a.
KR1020110091598A 2011-09-09 2011-09-09 Wavelengh conversion structure, manufacturing methods thereof, and lighting emitting device including the wavelength conversion structure KR20130028218A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117031826A (en) * 2023-08-30 2023-11-10 惠科股份有限公司 Backlight module and display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117031826A (en) * 2023-08-30 2023-11-10 惠科股份有限公司 Backlight module and display device

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