CN104466019A - Structure and method for improving light extraction efficiency - Google Patents
Structure and method for improving light extraction efficiency Download PDFInfo
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- CN104466019A CN104466019A CN201410691916.6A CN201410691916A CN104466019A CN 104466019 A CN104466019 A CN 104466019A CN 201410691916 A CN201410691916 A CN 201410691916A CN 104466019 A CN104466019 A CN 104466019A
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- dielectric layer
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- light extraction
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- 238000000605 extraction Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 19
- 230000003287 optical effect Effects 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims 1
- 239000004926 polymethyl methacrylate Substances 0.000 claims 1
- 238000009826 distribution Methods 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 239000003989 dielectric material Substances 0.000 abstract 3
- 230000008859 change Effects 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000000192 social effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to a structure and method for improving the light extraction efficiency. A dielectric layer is arranged between a light source side and an exterior dielectric side, a micro structure used for changing the light transmission propagation direction is arranged in the dielectric layer, the micro structure is spherical or in the shape of a rod or a cone, air exists in the micro structure, the dielectric layer is arranged outside the micro structure, or the micro structure is composed of same dielectrics, but the interior lattice arrangement condition of the micro structure is changed, and distribution of refractive indexes of the micro structure is different from other positions in the dielectric layer. Structural design of micro optics is achieved in the dielectric layer, the micro optical structure changes the propagation path of light in dielectrics, the total reflection phenomenon is avoided, light energy which cannot be utilized because of total reflection can be utilized, light is coupled through the dielectrics so that the light outgoing efficiency can be increased, and the utilization rate of the light energy is remarkably increased.
Description
Technical field
The present invention relates to a kind of structure and the method thereof that improve light extraction efficiency.
Background technology
Current in display and lighting field, the light extraction efficiency of light source affects the service time of electronic equipment to a great extent, for mobile device, especially obviously.In numerous illuminating source, light-emitting diode (LED) and Organic Light Emitting Diode (OLED) progressively instead of the luminescent devices such as previous cold-cathode tube (CCFL), become the main stream light sources in market.Wherein Organic Light Emitting Diode (OLED) is a kind of thin-film light emitting device, by applying certain voltage at the two ends of luminous element, makes the continuous compound of the electronics in luminescent material and hole and luminous.The field of its application can extend to the every field such as display from illumination, is a very promising technology.The light extraction efficiency of OLED is one of emphasis of this technical research always, total light extraction efficiency of OLED is determined jointly by internal quantum efficiency and external quantum efficiency, in the last few years, internal quantum efficiency about OLED can realize the efficiency close to 100%, and external quantum efficiency is also confined to lower by about 20%.Light is trapped in three kinds of mode (surface plasma mode, guided mode, substrate mode) and can not be coupled out outside OLED in OLED.Be roughly divided into several for the method improving outer extraction efficiency current OLED: microlens array of 1. arranging is in substrate glass outer surface; 2. roughening glass substrate outer surface; 3. fill between interior surfaces of glass and ITO or grow certain material or material.The scheme of 1. planting can change the situation of light source lambertian distribution originally, change the angle of divergence, if have image blurring situation for showing, 2. the plant scheme and be not suitable for display, because have scattering phenomenon not putting bright pixel situation sub-screen, 3. the technological process that scheme of planting needs to change current OLED manufacture, and be not suitable for extensive manufacture.On the other hand, light-emitting diode (LED) is by three four compounds, and as the semiconductors such as GaAs (GaAs), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide) are made, its core is PN junction.Under certain condition, it has the characteristics of luminescence.Under forward voltage, electronics injects P district by N district, and N district is injected by P district in hole.Minority carrier (few son) part entering the other side region and majority carrier (how son) compound and luminous.Total light extraction efficiency of LED is determined jointly by internal quantum efficiency and external quantum efficiency equally, and internal quantum efficiency can be greater than 50% at optimum conditions, and external quantum efficiency only has 0.1% ~ 0.7%.With the medium parcel luminescence chip that refractive index is high, then external quantum efficiency can bring up to 20%-30%.For LED, the method extracting outer extraction efficiency is generally the shape of the high index of refraction material changing encapsulating light emitting chip, destroys total reflection, or uses reflector to increase operation rate.Its problem is the dispersion angle of the light of the lambertian distribution that can change chip light emitting originally, there is the problem of angular brightness non-uniform light, simultaneously owing to changing the encapsulation shape of LED outside, makes the volume of LED increase the integrated level being unfavorable for raising system to some extent.
When luminescent layer needs by certain material or medium couples to time outside, because optical transmission medium and the residing medium of medium and light source itself being coupled to outside exist refringence, each dielectric interface has the generation of total reflection phenomenon, and this phenomenon can make light be reflected back light source place medium or in being confined to the dielectric layer that penetrates needed for light, external agency (such as air) cannot be coupled to, thus cause the loss of this part light energy.
Summary of the invention
The object of the invention is the deficiency overcoming prior art existence, a kind of structure and the method thereof that improve light extraction efficiency are provided.
Object of the present invention is achieved through the following technical solutions:
Improve the structure of light extraction efficiency, feature is: between light source side and external agency side, have dielectric layer, is provided with the micro-structural for changing optical propagation direction in described dielectric layer.
Further, the structure of above-mentioned raising light extraction efficiency, wherein, described micro-structural is spherical or bar-shaped or taper.
Further, the structure of above-mentioned raising light extraction efficiency, wherein, described micro-structural be inner for air outside be the microstructure of dielectric layer.
Further, the structure of above-mentioned raising light extraction efficiency, wherein, described micro-structural is made up of same medium but changes the structure of its internal crystal framework arrangement situation, presents the refraction index profile different from other position in dielectric layer.
Further, the structure of above-mentioned raising light extraction efficiency, wherein, described micro-structural is formed at dielectric layer inside engraving by pulse laser.
Further, the structure of above-mentioned raising light extraction efficiency, wherein, described micro-structural extends to dielectric layer surface along its length.
Further, the structure of above-mentioned raising light extraction efficiency, wherein, the refractive index of described light source side is n1, and the refractive index of dielectric layer is n2, and the refractive index of external agency side is n3, n1 ≠ n2, n2 >=n3.
The present invention improves the method for light extraction efficiency, light is incident to dielectric layer from light source side, is coupled in the process of external agency side through dielectric layer, and the micro-structural in dielectric layer changes the direction of propagation of light, make luminous energy meet outgoing condition and the angle of emergence is less than critical angle, therefore couples optical energy is in external agency.
Again further, the method for above-mentioned raising light extraction efficiency, wherein, the refractive index of described light source side is n1, and the refractive index of dielectric layer is n2, and the refractive index of external agency side is n3, meets n1 ≠ n2, n2 >=n3.
The substantive distinguishing features that technical solution of the present invention is outstanding and significant progress are mainly reflected in:
1. the present invention realizes the structural design of micro-optic in dielectric layer inside, micro optical structure changes light propagation path in media as well, avoid the generation of total reflection phenomenon, the luminous energy that cannot be utilized due to total reflection is utilized, significantly improves the utilance of light energy;
2. only design for the dielectric layer of optical transport, significantly improve out coupling efficiency not changing on the basis penetrating shape of medium needed for light, the technological process making photoelectric device at present can't be changed;
3. be very applicable to large area and industrial production, economic benefit and social effect significantly, are rated as the good technology with novelty, creativeness, practicality.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, technical solution of the present invention is described further:
Fig. 1: structural representation of the present invention.
Embodiment
The present invention proposes a kind of novel design method, is intended to reduce light energy and is limited in ratio in each mode, thus improve whole lighting efficiency.
As shown in Figure 1, improve the structure of light extraction efficiency, there is dielectric layer 2 between light source side 1 and external agency side 3, in dielectric layer 2, being provided with the micro-structural 4 for changing optical propagation direction.
Micro-structural 4 is in spherical or bar-shaped or taper etc., multiple means can be adopted to realize making micro-structural, such as pulse laser is formed at dielectric layer inside engraving, the mode forming micro-structural is not limited to pulse laser one, also by reserving the space of micro-structural when making glass, just complete the design of structure in the lump when making.
Micro-structural 4 be inner for air outside be the microstructure of dielectric layer, or micro-structural 4 is made up of same medium but changes the structure that its internal crystal framework arranges situation, presents the refraction index profile different from other position in dielectric layer.
The length of micro-structural 4 can be designed to extend to dielectric layer surface or only inner at dielectric layer, does not destroy dielectric layer surface pattern.The shape of micro-structural and length can be undertaken controlling (such as adjusting the energy size etc. of the radiative wavelength of laser, pulse frequency, duration, single pulse) by different technological means.According to different demands, the arrangement of micro-structural can be random, also can be that even micro-structural depth location in the dielectric layer also can make and variously arranges flexibly and change according to array way arrangement.
During embody rule, light is incident to dielectric layer 2 from light source side 1, is coupled in the process of external agency side 3 through dielectric layer 2, and the micro-structural 4 in dielectric layer 2 changes the direction of propagation of light, make luminous energy meet outgoing condition and the angle of emergence is less than critical angle, therefore couples optical energy is in external agency.The structural design of micro-optic is realized in dielectric layer inside, micro optical structure can destroy light propagation path in media as well, avoid the generation of total reflection phenomenon, the luminous energy that cannot be utilized due to total reflection is utilized, the efficiency increase that light is coupling luminous via medium.
Light source side represents light and is incident to dielectric layer from this side, do not represent that dielectric layer must be close to light source side, can be that light source is close to dielectric layer, also can be that light source enters last layer dielectric layer through the medium of this layer, wherein the refractive index of this layer is n1, and the refractive index of the dielectric layer that light need penetrate is n2, and the refractive index of external agency side is n3, n1 ≠ n2, n2 >=n3.Generally, light source is coupled to the process of external agency through dielectric layer, and light on dielectric interface, total reflection phenomenon can occur, and light will be coupled to external agency, and energy can lose.And the present invention designs dielectric layer, make that there are in dielectric layer some micro-structurals, the script direction of propagation of Microstructure Fracture light, destroy total reflection effect, luminous energy is made to meet outgoing condition (angle of emergence is less than critical angle), therefore couples optical energy is in external agency, improves the utilance of light energy.
The number of density on the light energy be finally coupled out of micro-structural has impact, the size of the quantity that light is coupled out increases gradually along with the increase of micro-structural density, but when micro-structural density increases to a certain degree, the light ray energy be coupled out cannot increase again can reach a saturated degree gradually, and therefore the density of micro-structural has optimized value.The depth location that micro-structural is in medium is insensitive on the size impact going out light energy.The shape of micro-structural arrangement is insensitive on the size impact going out light energy when close evenly arrangement.The shape of micro-structural can change the pattern of bright dipping, if cone structure can cause light type more concentrated, if circular, light type can be caused to compare and disperse.The shape, arrangement, density etc. of micro-structural can not the spectral line of derivative spectomstry be drifted about.
In sum, the present invention only designs for the dielectric layer of optical transport, coupling efficiency not changing the basis penetrating shape of medium needed for light significantly improves, the technological process making photoelectric device at present can't be changed, very be applicable to large area and industrial production, there is higher practicality and economic worth.
It is to be understood that: the above is only the preferred embodiment of the present invention; for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. improve the structure of light extraction efficiency, it is characterized in that: between light source side and external agency side, there is dielectric layer, in described dielectric layer, being provided with the micro-structural for changing optical propagation direction.
2. the structure of raising light extraction efficiency according to claim 1, is characterized in that: described micro-structural is spherical or bar-shaped or taper.
3. the structure of raising light extraction efficiency according to claim 1 and 2, is characterized in that: described micro-structural be inner for air outside be the microstructure of dielectric layer.
4. the structure of raising light extraction efficiency according to claim 1 and 2, is characterized in that: described micro-structural is made up of same medium but changes the structure of its internal crystal framework arrangement situation, presents the refraction index profile different from other position in dielectric layer.
5. the structure of raising light extraction efficiency according to claim 1 and 2, is characterized in that: described micro-structural is formed at dielectric layer inside engraving by pulse laser.
6. the structure of raising light extraction efficiency according to claim 1 and 2, is characterized in that: described micro-structural extends to dielectric layer surface along its length.
7. the structure of raising light extraction efficiency according to claim 1, is characterized in that: the material of described dielectric layer is glass or PC film or PE or PMMA.
8. the structure of raising light extraction efficiency according to claim 1, is characterized in that: the refractive index of described light source side is n1, and the refractive index of dielectric layer is n2, and the refractive index of external agency side is n3, n1 ≠ n2, n2 >=n3.
9. structure described in claim 1 realizes the method improving light extraction efficiency, it is characterized in that: light is incident to dielectric layer from light source side, be coupled in the process of external agency side through dielectric layer, micro-structural in dielectric layer changes the direction of propagation of light, make luminous energy meet outgoing condition and the angle of emergence is less than critical angle, therefore couples optical energy is in external agency.
10. the method for raising light extraction efficiency according to claim 9, is characterized in that: the refractive index of described light source side is n1, and the refractive index of dielectric layer is n2, and the refractive index of external agency side is n3, meets n1 ≠ n2, n2 >=n3.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410691916.6A CN104466019A (en) | 2014-11-25 | 2014-11-25 | Structure and method for improving light extraction efficiency |
| PCT/CN2015/079143 WO2016082486A1 (en) | 2014-11-25 | 2015-05-18 | Structure and method for improving light extraction efficiency |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410691916.6A CN104466019A (en) | 2014-11-25 | 2014-11-25 | Structure and method for improving light extraction efficiency |
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| CN104466019A true CN104466019A (en) | 2015-03-25 |
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| CN201410691916.6A Pending CN104466019A (en) | 2014-11-25 | 2014-11-25 | Structure and method for improving light extraction efficiency |
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| CN (1) | CN104466019A (en) |
| WO (1) | WO2016082486A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016082486A1 (en) * | 2014-11-25 | 2016-06-02 | 上海交通大学 | Structure and method for improving light extraction efficiency |
| CN109037462A (en) * | 2014-07-24 | 2018-12-18 | 环球展览公司 | OLED device and its manufacturing method with enhancement layer |
| CN111880312A (en) * | 2020-03-27 | 2020-11-03 | 西安炬光科技股份有限公司 | Optical device, beam shaping method and application module |
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| KR102044923B1 (en) * | 2013-04-15 | 2019-11-15 | 삼성디스플레이 주식회사 | Organic light emitting display device and manufacturing method thereof |
| CN104466019A (en) * | 2014-11-25 | 2015-03-25 | 上海交通大学 | Structure and method for improving light extraction efficiency |
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2014
- 2014-11-25 CN CN201410691916.6A patent/CN104466019A/en active Pending
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- 2015-05-18 WO PCT/CN2015/079143 patent/WO2016082486A1/en active Application Filing
Patent Citations (5)
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| EP1445095A1 (en) * | 2001-10-25 | 2004-08-11 | Matsushita Electric Works, Ltd. | Composite thin film holding substrate, transparent conductive film holding substrate, and panel light emitting body |
| CN101766052A (en) * | 2007-07-27 | 2010-06-30 | 旭硝子株式会社 | Translucent substrate, method for manufacturing the translucent substrate, organic led element and method for manufacturing the organic LED element |
| WO2010140629A1 (en) * | 2009-06-02 | 2010-12-09 | パナソニック電工株式会社 | Organic electroluminescent element |
| US20110058770A1 (en) * | 2009-09-10 | 2011-03-10 | E. I. Du Pont De Nemours And Company | Sub-surface engraving of oled substrates for improved optical outcoupling |
| CN103828084A (en) * | 2011-09-30 | 2014-05-28 | 通用电气公司 | OLED devices comprising hollow objects |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109037462A (en) * | 2014-07-24 | 2018-12-18 | 环球展览公司 | OLED device and its manufacturing method with enhancement layer |
| WO2016082486A1 (en) * | 2014-11-25 | 2016-06-02 | 上海交通大学 | Structure and method for improving light extraction efficiency |
| CN111880312A (en) * | 2020-03-27 | 2020-11-03 | 西安炬光科技股份有限公司 | Optical device, beam shaping method and application module |
| CN111880312B (en) * | 2020-03-27 | 2022-09-16 | 西安炬光科技股份有限公司 | Optical device, beam shaping method and application module |
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| Publication number | Publication date |
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| WO2016082486A1 (en) | 2016-06-02 |
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Application publication date: 20150325 |
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