KR20130025242A - A fluorescent body, light emitting diode and package of thereof - Google Patents

Abstract

PURPOSE: An acid nitride phosphor with improved coloring index is provided to minimize color segmentation by having a wide spectrum for light-emitting wavelength and to have uniform particle size. CONSTITUTION: An acid nitride phosphor comprises a crystal indicated in chemical formula: A_(2-x)B_a Si_b O_d N_e : Ce^(3+)_x, wherein A is a trivalent rare earth metal , B is a metal atom, x is 0.01-0.2, a is 1-3, b is 1-3, c is 5-12, and d is 1-15. A light-emitting diode comprises a first semiconductor layer, a second semiconductor layer, and an active layer arranged between first and second semiconductor layers; a light-emitting structure which emits light with a base peak of 440-490 nm; and a light-emitting layer which emits light with a base peak of 500-680 nm and arranged on one side of the light-emitting structure. The light-emitting layer is formed of the acid nitride phosphor.

Description

Oxynitride phosphor and light emitting device and light emitting device package using the same {A FLUORESCENT BODY, LIGHT EMITTING DIODE AND PACKAGE OF THEREOF}

The embodiment relates to an oxynitride phosphor, and a light emitting device and a light emitting device package using the same.

Recently, galvanized GaN-based white light emitting diodes (LEDs), which have been actively developed worldwide, are manufactured in a single chip form by combining fluorescent materials on blue or ultra violet (UV) LED chips. It is divided into two methods of obtaining white and a method of obtaining white by combining LED chips in a multi-chip form.

A typical method of implementing white light emitting diodes in a multi-chip form is to combine three chips of RGB (Red, Green, Blue), and each chip outputs according to the nonuniformity of operating voltage and ambient temperature. This change causes color problems and other problems.

LED device that emits white light with a single chip is a method of using blue light emitted from the device by applying a phosphor to the LED and a secondary light source emitted from the phosphor. A method of obtaining white light by applying YAG: Ce phosphors emitting yellow to the blue LED. [US Pat. No. 6,069,440] is common. However, the above method has disadvantages in that the efficiency is reduced due to quantum deficits and re-radiation efficiency generated by using secondary light, and color rendering is not easy.

YAG is not only thermally deteriorated at more than 100 ° C., but also uses Y ₂ O ₃ in natural materials and requires high temperature heat treatment at 1500 ° C. or higher to disadvantage the production cost. In addition, when doping rare earth trivalent ions to change the emission main peak of the YAG to a red region, there is a problem such that the emission luminance decreases.

Embodiments provide an oxynitride phosphor having improved color rendering index, and a light emitting device and a light emitting device package using the same.

An oxynitride phosphor according to the embodiment includes a crystal represented by the following formula.

[Chemical Formula]

A _(2-x) B _a Si _b O _d N _e : Ce ³⁺ _x

(In the above formula, A is a trivalent rare earth metal, B is a metal element, x is 0.01 to 0.2, a is 1 to 3, b is 1 to 3, c is 5 to 12, and d Is 1 to 15.)

In the oxynitride phosphor according to the embodiment, the spectrum of the emission wavelength is widened, thereby improving the color rendering index.

The oxynitride phosphor according to the embodiment has a broad spectrum of emission wavelengths, thereby minimizing color separation.

The oxynitride phosphor according to the embodiment may emit white light by exciting the light generated from the light emitting device.

In the oxynitride phosphor according to the embodiment, the particles are uniform to improve the scattering of the light emitting device.

1 is a view showing an emission spectrum showing the excitation wavelength band of the oxynitride phosphor according to the embodiment,
2 is a view showing an emission spectrum showing an emission wavelength band of an oxynitride phosphor according to an embodiment;
3 is a flowchart illustrating a method of synthesizing an oxynitride phosphor according to an embodiment;
4 is a photograph of the particles of the oxynitride phosphor according to the embodiment observed with a surface scanning electron microscope,
5 is a component distribution graph showing a result of fluorescence X-ray analysis of an oxynitride phosphor according to an embodiment;
6 is a cross-sectional view showing a cross section of a light emitting device including an oxynitride phosphor according to an embodiment;
7A is a perspective view of a light emitting device package including an oxynitride phosphor according to an embodiment;
7B is a cross-sectional view of a light emitting device package including an oxynitride phosphor according to an embodiment;
8A is a perspective view of an illumination system including an oxynitride phosphor according to an embodiment;
8B is a sectional view showing a section CC ′ of the lighting system of FIG. 8A;
9 is an exploded perspective view of a liquid crystal display device including an oxynitride phosphor according to an embodiment; and
10 is an exploded perspective view of a liquid crystal display device including an oxynitride phosphor according to an embodiment.

In the description of embodiments, each layer, region, pattern, or structure is “under” a substrate, each layer (film), region, pad, or “on” of a pattern or other structure. In the case of being described as being formed on the upper or lower, the "on", "under", upper, and lower are "direct" "directly" or "indirectly" through other layers or structures.

In addition, the description of the positional relationship between each layer or structure, please refer to this specification, or drawings attached to this specification.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size and area of each component do not entirely reflect actual size or area.

1 is a view showing an emission spectrum showing the excitation wavelength band of the oxynitride phosphor according to the embodiment, Figure 2 is a view showing an emission spectrum showing the emission wavelength band of the oxynitride phosphor according to the embodiment.

An oxynitride phosphor according to the embodiment includes a crystal represented by the following formula.

[Chemical Formula]

A _(2-x) B _a Si _b O _d N _e : Ce ³⁺ _x

(In the above formula, A is a + trivalent rare earth metal, and B is a metal element.)

In the oxynitride phosphor according to the embodiment, referring to FIG. 1, the wavelength region of 440 to 490 nm is used as the excitation wavelength band, that is, the excitation main peak. Referring to FIG. It can be made into a peak. The oxynitride phosphor may emit light by exciting light generated from a light source in a wide range.

The light emitted by the phosphor according to this embodiment is synthesized with near-ultraviolet light (N-UV) used as excitation light when used in a white light emitting diode to represent white light, thereby emitting white light. It can be used in the light emitting device according to. This is explained below.

The oxynitride phosphor having a chemical formula of A _(2-x) B _a Si _b O _d N _e : Ce ³⁺ _x may have a x of 0.01 to 0.2.

A may be yttrium (Y). B may be aluminum (Al).

The a may be 1 to 3, the b may be 1 to 3, the c may be 5 to 12, the d may be 1 to 15.

The full width at half maximum (FWHM) range of the oxynitride phosphor may be 509 to 647 nm. The oxynitride phosphors may have a half width of about 138 nm. The oxynitride phosphor may have a half width that is improved to significantly improve the color rendering index.

The oxynitride phosphor according to the embodiment may be combined with a UV LED or a blue LED to produce white light having excellent color rendering properties even with a single component without mixing with a phosphor of another color. The oxynitride phosphor has a high emission intensity in the yellow region, thereby realizing white light having excellent color rendering properties.

3 is a flowchart illustrating a method of synthesizing an oxynitride phosphor according to an embodiment.

Referring to FIG. 3, the method for preparing an oxynitride phosphor includes preparing a raw material (a), mixing the raw material (b), forming a phosphor synthesis atmosphere (c), a ball mill process, and a drying operation. Step (d), and (e) analyzing the components of the phosphor.

In step (a) of preparing a raw material, Y ₂ O ₃ , AlN, SiO ₂ , Si ₃ N ₄ , and CeO ₂ , which are raw materials, may be prepared according to a composition ratio.

In step (b) of mixing the raw materials, the raw materials may be mixed according to the composition ratio and then mixed using agate induction and acetone solvent.

In step (c) of forming the phosphor synthesis atmosphere, the phosphor may be oxidized at a temperature of 1300 to 1500 ° C. for 10 hours. In this case, the hydrogen / nitrogen gas may be changed at a ratio of 5:95 to 20:80 v / v, and the gas flow may sinter the phosphor under 1000 to 2000 cc. The oxynitride phosphor may be synthesized by a low temperature atmospheric pressure method.

In step (d) of the ball mill process and the drying operation, the phosphor powder synthesized by firing the phosphor in the previous step (c) is mixed with water, and then the ball mill process and the cleaning process are performed using zirconia and glass balls. Drying can be performed for about 12 hours in an oven at 80 ° C.

The step (e) of analyzing the components of the phosphor may confirm PL emission and perform surface scanning electron microscopy (SEM) and fluorescence X-ray analysis (EDX) on the oxynitride phosphor. The result of confirming the PL emission is shown in the graphs of FIGS. 1 and 2.

Figure 4 is a photograph of the particles of the oxynitride phosphor according to the embodiment observed with a surface scanning electron microscope.

It can be seen from the surface scanning electron microscopy results of FIG. 4 that the fine particles of the oxynitride phosphor of A _(2-x) B _a Si _b O _d N _e : Ce ³⁺ _x are evenly distributed.

The crystal size of the oxynitride phosphor may be 1 to 2㎛. When the particles of the phosphor are made uniform, the distribution of the phosphor can be made uniform. That is, the dispersibility of the phosphor can be improved. The oxynitride phosphors can have an improved spread. When the oxynitride phosphor is applied to a light emitting device, the quality of the light emitting device can be improved. If the crystal size of the oxynitride phosphor is excessively small, the light efficiency may be reduced, and if it is too large, the distribution of the phosphor may be uneven.

5 is a component distribution graph showing the results of fluorescence X-ray analysis of the oxynitride phosphors according to the example.

As a result of quantitative analysis of the oxynitride phosphor by fluorescence X-ray analysis, it can be confirmed that Y, Si, Al, Ce, O, and N were detected. Table 1 below shows the Wt% and At% of the components included in the oxynitride phosphor. Fluorescence X-ray analysis may confirm that essential elements are detected in the oxynitride phosphor.

6 is a cross-sectional view showing a cross section of a light emitting device 100 including an oxynitride phosphor according to an embodiment.

Referring to FIG. 6, the light emitting device 100 according to the embodiment is disposed on the substrate 110 and the substrate 110, and has a first semiconductor layer 122, a second semiconductor layer 126, and a first semiconductor layer. A phosphor layer including an active layer 124 disposed between the 122 and the second semiconductor layer 126, and a phosphor layer 130 disposed on one surface of the light emitting structure 120. 130 is A _(2-x) B _a Si _b O _d N _e : Ce ^Oxynitride phosphors having the formula ³⁺ .

The light emitting device 100 illustrated in FIG. 6 is a horizontal light emitting diode, but the light emitting device 100 is not limited to the horizontal light emitting device. That is, although the horizontal light emitting diode is mentioned below, the doped materials of the first semiconductor layer 122 and the second semiconductor layer 126 may be different from each other, and the embodiment may be applied to the vertical light emitting diode.

The substrate 110 may be formed of a semiconductor material according to an embodiment, for example, silicon (Si), germanium (Ge), gallium arsenide (GaAs), zinc oxide (ZnO), silicon carbide (SiC), It may be implemented as a carrier wafer such as silicon germanium (SiGe), gallium nitride (GaN), gallium (III) oxide (Ga ₂ O ₃ ).

The substrate 110 may be formed of a conductive material. According to the embodiment, the metal may be formed of, for example, gold (Au), nickel (Ni), tungsten (W), molybdenum (Mo), copper (Cu), aluminum (Al), tantalum (Ta), or silver. It may be formed of any one selected from (Ag), platinum (Pt), chromium (Cr) or formed of two or more alloys, and may be formed by stacking two or more of the above materials. When the substrate 110 is formed of a metal, the thermal stability of the light emitting device may be improved by facilitating the emission of heat generated from the light emitting device.

The substrate 110 may include a patterned substrate (PSS) structure on an upper surface thereof to increase light extraction efficiency, but is not limited thereto. The substrate 110 may improve the thermal stability of the light emitting device 100 by facilitating the emission of heat generated from the light emitting device 100. The substrate 110 may include a layer having a difference between the first semiconductor layer 122 and the lattice constant to mitigate the difference in the lattice constant between the first semiconductor layer 122 but is not limited thereto.

Meanwhile, a buffer layer (not shown) may be disposed on the substrate 110 to mitigate lattice mismatch between the substrate 110 and the first semiconductor layer 122 and to easily grow the semiconductor layer. The buffer layer (not shown) may be formed in a low temperature atmosphere, and may be formed of a material capable of alleviating the difference in lattice constant between the semiconductor layer and the substrate 110. For example, materials such as GaN, InN, AlN, AlInN, InGaN, AlGaN, and InAlGaN can be selected and not limited thereto. The buffer layer (not shown) may grow non-single crystal on the substrate 110, and the buffer layer (not shown) grown in the non-single crystal may improve crystallinity of the first semiconductor layer 122 growing on the buffer layer (not shown). You can.

The light emitting structure including the first semiconductor layer 122, the active layer 124, and the second semiconductor layer 126 may be disposed on the buffer layer (not shown).

The first semiconductor layer 122 may be disposed on the buffer layer (not shown). The first semiconductor layer 122 may be implemented as an n-type semiconductor layer, and may provide electrons to the active layer 124. A first semiconductor layer 122, for _{example, In x Al y Ga 1 -x-} y N (0 = x = 1, 0 = y = 1, 0 = x + y = 1) semiconductor material having a compositional formula of For example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, etc. may be selected, and n-type dopants such as Si, Ge, Sn, and the like may be doped.

In addition, an undoped semiconductor layer (not shown) may be further included under the first semiconductor layer 122, but is not limited thereto. The undoped semiconductor layer (not shown) is a layer formed to improve the crystallinity of the first semiconductor layer 122, except that the n-type dopant is not doped and thus has lower electrical conductivity than that of the first semiconductor layer 122. And may be the same as the first semiconductor layer 122.

The active layer 124 may be disposed on the first semiconductor layer 122. The active layer 124 may be formed of a single or multiple quantum well structure, a quantum-wire structure, a quantum dot structure, or the like using a compound semiconductor material of a group III-V group element.

Well active layer 124 has a composition formula in this case formed of a quantum well structure, for _{example, In x Al y Ga 1 -x-} y N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) It may have a single or multiple quantum well structure having a layer and a barrier layer having a composition formula of In _a Al _b Ga _{1 -a- b} N ( _{0≤a≤1, 0≤b≤1, 0≤a} + b≤1). Can be. The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.

A conductive clad layer (not shown) may be disposed above or below the active layer 124. The conductive clad layer (not shown) may be formed of an AlGaN-based semiconductor, and may have a band gap larger than that of the active layer 124.

The second semiconductor layer 126 may be implemented as a p-type semiconductor layer to inject holes into the active layer 124. A second semiconductor layer 126 is, for example, semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) For example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, and the like may be selected, and p-type dopants such as Mg, Zn, Ca, Sr, and Ba may be doped.

The phosphor layer 130 may be disposed on one surface of the light emitting structure 120. The phosphor layer 130 may be disposed to cover the light emitting structure 120 or may be disposed on one surface thereof. In some cases, the light emitting portion of the light emitting structure 120 may be partially molded, but is not limited thereto. In the case of a small-capacity light emitting device, it is preferable to mold it as a whole, but in the case of a high-power light emitting device, molding in its entirety may adversely affect evenly dispersing the phosphor in the resin, and thus partial molding may be preferable. The phosphor layer 130 may be formed of one or a plurality of light transmitting epoxy resins, polyimide resins, urea resins, acrylic resins, or light transmitting silicone resins.

The phosphor layer 130 may minimize defects due to foreign material injection by blocking the light emitting structure from the outside.

The phosphor layer 130 may include an oxynitride phosphor. The oxynitride phosphor includes a crystal represented by the following formula.

[Chemical Formula]

A _(2-x) B _a Si _b O _d N _e : Ce ³⁺

The phosphor layer 130 may include the oxynitride phosphor and have a full width at half maximum, and may have an excellent color rendering index, thereby emitting white light by exciting light generated from the light emitting structure 120.

7A and 7B are a perspective view and a cross-sectional view of a light emitting device package 500 according to an embodiment.

Referring to FIGS. 7A and 7B, the light emitting device package 500 includes a body 510 in which an upper surface is recessed and a cavity 520, and a light source and body 510 disposed in the cavity 520 to emit light. The cavity to cover the first and second lead frames 540 and 550, the light emitting device 530 electrically connected to the first and second lead frames 540 and 550, and the light emitting device 530. 520 may include an encapsulant (not shown) filled in.

The body 510 may be made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), liquid crystal polymer (PSG), polyamide 9T (SPS), a metal material, sapphire (Al ₂ O ₃ ), beryllium oxide (BeO), and a printed circuit board (PCB). The body 510 may be formed by injection molding, etching, or the like, but is not limited thereto.

The inner surface of the body 510 may be formed with an inclined surface. The reflection angle of the light emitted from the light emitting device 530 can be changed according to the angle of the inclined surface, and thus the directivity angle of the light emitted to the outside can be controlled.

Concentration of light emitted to the outside from the light emitting device 530 increases as the directivity angle of light decreases. Conversely, as the directivity angle of light increases, the concentration of light emitted from the light emitting device 530 decreases.

The shape of the cavity 520 formed in the body 510 may be circular, rectangular, polygonal, elliptical, or the like, and may have a curved shape, but the present invention is not limited thereto.

The light emitting device 530 is mounted on the first lead frame 540 and may be, for example, a light emitting device emitting light of red, green, blue, white, or UV (ultraviolet) light emitting device emitting ultraviolet light. But it is not limited thereto. In addition, one or more light emitting elements 530 may be mounted.

The light emitting device 530 may be a horizontal type or a vertical type formed on the upper or lower surface of the light emitting device 530 or a flip chip Applicable.

The encapsulant (not shown) may be filled in the cavity 520 to cover the light emitting device 530. The encapsulant (not shown) may be formed of one or a plurality of light transmitting epoxy resins, polyimide resins, urea resins, acrylic resins, or light transmitting silicone resins. The encapsulant (not shown) may be formed by filling the cavity 520 and then UV or heat curing the encapsulant.

In addition, the encapsulant (not shown) may include a phosphor, and the phosphor is A _(2-x) B _a Si _b O _d N _e : Ce Crystals with a chemical formula of ³⁺ . The phosphor may enable the light emitting device package 500 to realize clear white light.

The phosphor may be excited by the light having the first light emitted from the light emitting device 530 to generate the second light. For example, as the light generated by the light emitting device 530 is mixed with the color of the phosphor, the light emitting device package 500 may provide white light.

The first and second lead frames 540 and 550 may be formed of a metal material such as titanium, copper, nickel, gold, chromium, tantalum, (Pt), tin (Sn), silver (Ag), phosphorus (P), aluminum (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium , Hafnium (Hf), ruthenium (Ru), and iron (Fe). Also, the first and second lead frames 540 and 550 may be formed to have a single layer or a multilayer structure, but the present invention is not limited thereto.

The first and second lead frames 540 and 550 are separated from each other and electrically separated from each other. The light emitting device 530 is mounted on the first and second lead frames 540 and 550, and the first and second lead frames 540 and 550 are in direct contact with the light emitting device 530 or a soldering member (not shown). May be electrically connected through a material having conductivity such as C). In addition, the light emitting device 530 may be electrically connected to the first and second lead frames 540 and 550 through wire bonding, but is not limited thereto. Accordingly, when power is supplied to the first and second lead frames 540 and 550, power may be applied to the light emitting device 530. Meanwhile, a plurality of lead frames (not shown) may be mounted in the body 510 and each lead frame (not shown) may be electrically connected to the light emitting device 530, but is not limited thereto.

8A is a perspective view illustrating a lighting device including a light emitting device package according to an embodiment, and FIG. 8B is a cross-sectional view illustrating a C-C 'cross section of the lighting device of FIG. 8A.

8A and 8B, the lighting device 600 may include a body 610, a cover 630 fastened to the body 610, and a closing cap 650 positioned at both ends of the body 610. have.

A light emitting device module 640 is coupled to a lower surface of the body 610. The body 610 is electrically conductive so that heat generated from the light emitting device package 644 can be emitted to the outside through the upper surface of the body 610. [ And a metal material having an excellent heat dissipation effect.

The light emitting device package 644 may be mounted on the printed circuit board 642 in a multi-color or multi-row manner to form an array. The light emitting device package 644 may be mounted at equal intervals, or may be mounted with various distances as required, have. As the printed circuit board 642, a MPPCB (Metal Core PCB) or a PCB made of FR4 may be used.

The light emitting device package 644 may include an encapsulant having a high color rendering index, thereby improving the implementation of white light, so that the resolution of the lighting device 600 including the light emitting device package 622 and the light emitting device package 644 may be improved. Can be improved.

The cover 630 may be formed in a circular shape so as to surround the lower surface of the body 610, but is not limited thereto.

The cover 630 protects the internal light emitting element module 640 from foreign substances or the like. The cover 630 may include diffusion particles so as to prevent glare of light generated in the light emitting device package 644 and uniformly emit light to the outside, and may include at least one of an inner surface and an outer surface of the cover 630 A prism pattern or the like may be formed on one side. Further, the phosphor may be applied to at least one of the inner surface and the outer surface of the cover 630.

On the other hand, since the light generated from the light emitting device package 644 is emitted to the outside through the cover 630, the cover 630 should have excellent light transmittance, and has sufficient heat resistance to withstand the heat generated from the light emitting device package 644. The cover 630 is preferably formed of a material including polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), or the like. .

The finishing cap 650 is located at both ends of the body 610 and can be used to seal the power supply unit (not shown). In addition, the finishing cap 650 is provided with the power supply pin 652, so that the lighting apparatus 600 according to the embodiment can be used immediately without a separate device on the terminal from which the conventional fluorescent lamp is removed.

9 is an exploded perspective view of a liquid crystal display including the light emitting device according to the embodiment.

The backlight unit 770 shown in FIG. 9 includes an edge-light type and the liquid crystal display 700 includes a backlight unit 770 for providing light to the liquid crystal display panel 710 and the liquid crystal display panel 710 can do.

The liquid crystal display panel 710 can display an image using light provided from the backlight unit 770. The liquid crystal display panel 710 may include a color filter substrate 712 and a thin film transistor substrate 714 facing each other with a liquid crystal therebetween.

The color filter substrate 712 can realize the color of an image to be displayed through the liquid crystal display panel 710.

The thin film transistor substrate 714 is electrically connected to the printed circuit board 718 on which a plurality of circuit components are mounted through the driving film 717. The thin film transistor substrate 714 may apply a driving voltage provided from the printed circuit board 718 to the liquid crystal in response to a driving signal provided from the printed circuit board 718. [

The thin film transistor substrate 714 may include a thin film transistor and a pixel electrode formed as a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 770 includes a light emitting element module 720 that outputs light, a light guide plate 730 that changes the light provided from the light emitting element module 720 into a surface light source and provides the light to the liquid crystal display panel 710, A plurality of films 750, 766, and 764 for uniformly distributing the luminance of light provided from the light guide plate 730 and improving vertical incidence and a reflective sheet (not shown) for reflecting the light emitted to the rear of the light guide plate 730 to the light guide plate 730 740).

The light emitting device module 720 may include a printed circuit board 722 to mount a plurality of light emitting device packages 724 and a plurality of light emitting device packages 724 to form an array.

Meanwhile, the backlight unit 770 includes a diffusion film 766 for diffusing light incident from the light guide plate 730 toward the liquid crystal display panel 710, and a prism film 750 for condensing the diffused light to improve vertical incidence. It may be configured as), and may include a protective film 764 for protecting the prism film 750.

10 is an exploded perspective view of a liquid crystal display device including a light emitting device according to an embodiment. However, the parts shown and described in FIG. 9 will not be described in detail repeatedly.

The backlight unit 870 shown in Fig. 10 may include a backlight unit 870 for providing light to the liquid crystal display panel 810 and the liquid crystal display panel 810 have.

The liquid crystal display panel 810 is the same as that described with reference to FIG. 9, and a detailed description thereof will be omitted.

The backlight unit 870 includes a plurality of light emitting element modules 823, a reflective sheet 824, a lower chassis 830 in which the light emitting element module 823 and the reflective sheet 824 are accommodated, And a plurality of optical films 860. The diffuser plate 840 and the plurality of optical films 860 are disposed on the light guide plate 840. [

LED Module 823 A plurality of LED package 822 and a plurality of LED package 822 may be mounted to include a printed circuit board 821 to form an array.

The reflective sheet 824 reflects light generated from the light emitting device package 822 in a direction in which the liquid crystal display panel 810 is positioned, thereby improving light utilization efficiency.

Light generated in the light emitting element module 823 is incident on the diffusion plate 840 and an optical film 860 is disposed on the diffusion plate 840. The optical film 860 may include a diffusion film 866, a prism film 850, and a protective film 864.

Meanwhile, the light emitting device according to the embodiment is not limited to the configuration and method of the embodiments described above, but the embodiments may be modified so that all or some of the embodiments may be selectively And may be configured in combination.

In addition, while the preferred embodiments have been shown and described, the present invention is not limited to the specific embodiments described above, and the present invention is not limited to the specific embodiments described above, and the present invention may be used in the art without departing from the gist of the invention as claimed in the claims. Various modifications can be made by those skilled in the art, and these modifications should not be individually understood from the technical spirit or the prospect of the present invention.

100 light emitting element 110 substrate
122: first semiconductor layer 124: active layer
126: second semiconductor layer 130: phosphor layer

Claims (11)

An oxynitride phosphor comprising a crystal represented by the following formula.
[Chemical Formula]
A _(2-x) B _a Si _b O _d N _e : Ce ³⁺ _x
(In the above formula, A is a trivalent rare earth metal, B is a metal element, x is 0.01 to 0.2, a is 1 to 3, b is 1 to 3, c is 5 to 12, and d Is 1 to 15.) The method of claim 1,
A is yttrium (Y) oxynitride phosphor. The method of claim 1,
B is aluminum (Al) oxynitride phosphor. The method of claim 1,
The oxynitride phosphor has a crystal size of 1 to 2 μm. The method of claim 1,
The full width at half maximum of the oxynitride phosphor is 509 to 647 nm. A light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer and having a main peak of 440 to 490 nm; And
And a phosphor layer disposed on one surface of the light emitting structure and configured to generate light having a main peak of 500 to 680 nm.
The phosphor layer is A _(2-x) B _a Si _b O _d N _e : Ce ³⁺ _x
Light emitting device comprising an oxynitride phosphor having the chemical formula of.
(In the above formula, A is a + trivalent rare earth metal, and B is a metal element.) The method of claim 13,
The phosphor layer is disposed to cover the light emitting structure. The method of claim 13,
The phosphor layer is formed of a light transmitting epoxy resin or a light transmitting silicone resin. A body having a cavity formed on an upper surface thereof;
A light source disposed in the cavity and emitting light for generating light having a main peak of 440 to 490 nm; And
It includes; encapsulation material disposed in the cavity,
The encapsulant has a chemical formula of A _(2-x) B _a Si _b O _d N _e : Ce ³⁺ _x ,
A light emitting device package comprising an oxynitride phosphor for generating light having a main peak of 500 to 680 nm.
(In the above formula, A is a + trivalent rare earth metal, and B is a metal element.) 10. The method of claim 9,
The encapsulant is a light emitting device package formed of a light transmitting epoxy resin or a light transmitting silicone resin. An oxynitride phosphor comprising a crystal represented by the following formula.
[Chemical Formula]
Y _x AlSi _a O _b N _c : Ce ³⁺ _x
(Wherein x is 0.1 to 0.2 and a, b, and c are integers)

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