KR20130024874A - Led lighting apparatus - Google Patents

Abstract

PURPOSE: An LED lighting device is provided to prevent the degradation of light emitting intensity and light emitting efficiency when using for long hours by separating a fluorescent substance layer including a fluorescent substance from an LED chip. CONSTITUTION: A fixed frame(10) is disposed at the rear of the LED lighting device and functions as a total frame. An LED module(20) is connected to the fixed frame. The LED module comprises multiple LED elements(23) respectively including LED chips(236). A light diffusion cover(30) is connected to the fixed frame and surrounds the front side of the LED module. A fluorescent substance layer(40) absorbs a part of light coming out from the LED chip and emits a predetermined light emitting spectrum. The fluorescent substance layer is formed in the shape of a plate covering the front of the LED module.

Description

Light emitting diode lighting device {LED lighting apparatus}

The present invention relates to a light emitting diode illumination device using a light emitting diode element.

The light emitting diode is compact, can efficiently emit light of vivid color, and is a semiconductor device, so there is no fear of loss, excellent initial driving characteristics and vibration resistance, and strong resistance to repeated ON / OFF lighting. As a result, light emitting diodes are widely used as various light sources.

Recently, a large amount of white light emitting sources have been produced using light emitting diodes. In order to obtain white light using a light emitting diode, since the light emitting diode has a monochromatic peak wavelength, it is necessary to provide three light emitting elements close to each other, for example, R, G, and B, and emit light by mixing them. There is. In order to generate white light with such a configuration, there is a problem that it is difficult to generate a desired white color due to dispersion of color tone, luminance, etc. of the light emitting device. In addition, when the light emitting elements are formed of different materials, there is a problem in that the driving circuit is complicated because it is necessary to apply a predetermined voltage to each of the light emitting elements due to different driving powers. In addition, since the light emitting device is a semiconductor light emitting device, the change in temperature characteristics and time elapses, so that the color tone changes according to the use environment or the color generated by each light emitting device cannot be uniformly mixed, resulting in color unevenness. There were many problems. That is, although the light emitting diode is effective as a light emitting device that emits each color, it is difficult to obtain a satisfactory light source capable of generating white light using the light emitting element.

Another method of obtaining white light using a light emitting diode is to combine a blue light emitting diode chip with a phosphor, and to convert white light by converting wavelengths. Japanese Patent Laid-Open No. 7-176794, Japanese Patent Laid-Open No. 8-7614, Japanese Patent No. 3700502 and the like. The light emitting diodes disclosed in these documents can emit other light emitting colors such as white light by using one type of light emitting device, and are mainly configured as follows.

The light emitting diode disclosed in the above document specifically includes a light emitting element having a large energy band gap of a light emitting layer on a cup provided at a tip of a synthetic resin frame, and absorbs light from the light emitting element in a resin mold member covering the light emitting element. And a phosphor that emits light (wavelength conversion) that is different from the light absorbed by the wavelength. That is, an epoxy resin or a silicone resin containing phosphor is directly applied near the light emitting diode chip, and the phosphor component is in direct contact with the high temperature generated in the chip.

 In addition, another light emitting diode introduced in the above documents has a quantum well structure, and the light emitting layer is made of a gallium nitride-based semiconductor including In, and includes a light emitting diode chip and a phosphor. The light emitting diode chip has a peak in the emission spectrum in the range of 420 to 490 nm. The phosphor absorbs some of the light emitted from the light emitting diode chip, has a peak at 530 to 570 nm, and consists of a garnet-based phosphor activated by light emitting cerium, which emits a light emission spectrum gradually decreasing to at least 700 nm. The light emission spectrum of the light generated by the light emitting diode chip and passing through without being absorbed by the phosphor and the light emission spectrum of the light generated by the phosphor overlap each other, and the white light can be emitted by mixing both light emission spectra. That is, an epoxy resin or a silicone resin containing phosphor is directly applied near the light emitting diode chip, so that the phosphor component is in direct contact with the high temperature generated in the light emitting diode chip.

When the phosphor layer is near a light emitting diode chip that emits blue light, the phosphor layer is characterized by yellowing and deterioration with time due to the high temperature heat generated when driving the blue light emitting diode chip. In a light emitting diode roughening device in which a plurality of rows of white light emitting diode elements are arranged in a row, heat may be expelled by an adjacent element, thereby causing a faster deterioration.

That is, when a lighting device is made using a white light emitting diode coated with a phosphor in one such package, reliability cannot be ensured by heat generation, thereby making it difficult to guarantee the quality of the light emitting diode lighting device.

The light emitting diode device having such a structure is excellent in initial luminous efficiency because an epoxy resin or a silicone resin containing a phosphor is directly coated and exposed on the light emitting diode chip, but a high temperature at which a phosphor component is generated in the light emitting diode chip when used for a long time is used. Due to this, there is a problem in reliability that the deterioration of the phosphor occurs, and thus, the color tone is changed or the phosphor is darkened and the external extraction efficiency of the light is lowered. Here, blackening means, for example, that when inorganic phosphors such as (Cd, Zn) S phosphors are used, a part of the metal elements constituting the phosphors are precipitated or deteriorated and colored. In the case of using, it means coloring by breaking of a double bond or the like. In addition, the YAG: Ce-based phosphor is also difficult to solve the problem of reliability deterioration due to phosphor itself deterioration. In particular, when the conversion efficiency of the phosphor is improved by using a semiconductor having a high energy band gap as a light emitting device (that is, the energy of the light emitted by the semiconductor is increased so that the light having a threshold or more that can be absorbed by the phosphor is absorbed). Increasing the amount of light absorbed by the phosphor, or decreasing the amount of phosphor used (i.e., the amount of energy irradiated to the phosphor is relatively high), inevitably increases the energy of the light absorbed by the phosphor. Is remarkable. Further, if the light emission intensity of the light emitting device is further increased and used for a long time, the deterioration of the phosphor becomes more severe.

In addition, the phosphor provided in the vicinity of the light emitting diode chip is brought to a high temperature state due to the temperature rise of the light emitting diode chip or an external environment (for example, due to sunlight when used outdoors) and deteriorated by this heat. It may be. In addition, depending on the phosphor, deterioration may be promoted by moisture penetrating from the outside or by moisture contained in the inside at the time of manufacture and the light and heat. In addition, when an ionic organic dye is used, in the vicinity of a chip | tip, electrophoresis may be caused by a direct current electric field, and color tone may change.

As described above, a light emitting diode device that implements white light using a blue light emitting diode chip and a phosphor has various problems due to deterioration of the phosphor.

The present invention has been made to solve the problems described above, and the problem to be solved by the present invention is to prevent the degradation of the phosphor to reduce the luminous intensity and luminous efficiency or color shift even under a long time use environment (color shift) This extremely small light emitting diode illumination device is provided.

The light emitting diode lighting apparatus according to the embodiment of the present invention, a light emitting diode module having a plurality of light emitting diode elements each of which is fastened to the fixed frame, the fixed frame and including a light emitting diode chip, the light emitting diode is fastened to the fixed frame It includes a light diffusion cover surrounding the front surface of the module, and a phosphor layer which is installed so as not to be in direct contact with the light emitting diode chip and absorbs a part of the light emitted from the light emitting diode chip to emit a predetermined emission spectrum.

The phosphor layer may be formed to have a plate shape covering the front of the light emitting diode module.

The phosphor layer may be formed in the form of a cover in contact with the inner surface of the light diffusion cover.

The phosphor layer may be formed to fill a space between the light diffusion cover and the light emitting diode module.

The phosphor layer may be integrally formed on the light diffusion plate.

The light diffusion cover and the fixing frame may be integrally formed.

The phosphor layer may be formed of a resin containing a phosphor, a plastic material, or glass.

The light emitting diode chip may be formed of a nitride compound semiconductor (General Formula: In _i Ga _j Al _k N, where 0 ≦ i, 0 ≦ j, 0 ≦ k, and i + j + k = 1) doped with InGaN or various impurities. GaN may be included.

The light emitting diode chip may be a blue light emitting diode chip that emits blue light, and the phosphor contained in the phosphor layer absorbs a part of the blue light to emit a light emission spectrum having a peak of 500 to 590 nm and gradually decreasing to at least 720 to 810 nm. It may be a phosphor capable of.

The phosphor contained in the phosphor layer includes at least one element selected from the group consisting of Y, Lu, Sc, La, Gd, and Sm, and at least one element selected from the group consisting of Al, Ga, and In, It may include a garnet-based phosphor activated by cerium.

The phosphor contained in the phosphor layer may be Y ₃ Al ₅ O ₁₂ : Ce or Gd ₃ In ₅ O ₁₂ : Ce.

The phosphor contained in the phosphor layer includes at least one element selected from the group consisting of Sr and Ca, and at least one element selected from the group consisting of Al, Si, and N, and is activated with Eu It may include a silicate (Silicate) -based phosphor.

The phosphor contained in the phosphor layer is composed of SrO _X BaO _Z CaO and MgO ₂ (SiO ₂ ) _b M ₂ O ₃ (where 0 ≦ x ≦ 1, 0 ≦ z ≦ 1, 0 ≦ _b ), and Eu It may include a silicate (Silicate) -based phosphor activated by (paid fume).

The phosphor contained in the phosphor layer is _{Si 6 - g Al g O g} N 8 -g ( where Im 0≤g≤3) consist of, comprise a silicate (Silicate) based fluorescent material activated with Eu (Pay-per-fume) Can be.

The phosphor contained in the phosphor layer may be a phosphor having a Ca _r Eu _t (Si, Al) ₁₂ (O, N) ₁₂ (where 0 ≦ r ≦ 2 and 0 ≦ t ≦ 2) composition.

The phosphor layer may include two or more phosphors having different compositions.

The light diffusion cover may contain a phosphor, the phosphor contained in the phosphor layer and the phosphor contained in the light diffusion cover may have a different composition, the phosphor contained in the phosphor layer and the light diffusion cover contained in Any one of the phosphors may be a red phosphor having a peak of 580 to 700 nm and the other one may be a phosphor having a peak of 500 to 590 nm.

According to the present invention, since the phosphor layer containing the phosphor is spaced apart from the light emitting diode chip, it is possible to prevent deterioration of the phosphor, and therefore, even in a long-term use environment, the degradation of luminescence intensity, luminous efficiency and color shift are extremely low. It is possible to provide a small light emitting diode illumination device.

1 is a perspective view of a light emitting diode lighting apparatus according to an embodiment of the present invention.
FIG. 2 is a schematic partially exploded perspective view of the LED lighting apparatus of FIG. 1.
3 is a cross-sectional view taken along the line III-III in Fig.
4 is a cross-sectional view of a light emitting diode lighting apparatus according to another embodiment of the present invention.
5 is a cross-sectional view of a light emitting diode lighting apparatus according to another embodiment of the present invention.
6 is a cross-sectional view of a light emitting diode lighting apparatus according to another embodiment of the present invention.
7 is a cross-sectional view of a light emitting diode lighting apparatus according to another embodiment of the present invention.
8 is a cross-sectional view of a light emitting diode lighting apparatus according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a perspective view of a light emitting diode lighting apparatus according to an embodiment of the present invention, FIG. 2 is a partial exploded perspective view of the light emitting diode lighting apparatus of FIG. 1, and FIG. 3 is a cutaway view taken along line III-III of FIG. 2. It is a cross section.

Referring to FIG. 1, a light emitting diode lighting apparatus according to an exemplary embodiment of the present invention may be a linear lighting lamp having a substantially bar shape similar to a conventional fluorescent lamp.

2 and 3, the light emitting diode lighting apparatus according to the embodiment of the present invention includes a fixing frame 10.

Various components described below are mounted to the fixed frame 10, and the fixed frame 10 is disposed behind the light emitting diode lighting device to serve as an overall frame.

The fixed frame 10 may be formed of a metal material such as aluminum alloy having good heat dissipation characteristics, and may be formed of a synthetic resin material as necessary. In this case, as shown in FIG. 3, a plurality of heat dissipation grooves 11 may be formed on the rear surface of the fixing frame 10, and the heat dissipation grooves 11 are formed to increase the cross-sectional area exposed to the outside, thereby increasing heat dissipation effect. Is improved.

The light emitting diode module 20 is fastened to the fixed frame 10. The light emitting diode module 20 includes a plurality of light emitting diode elements 23, and the light emitting diode elements 23 each include a light emitting diode chip 236. In this case, referring to FIG. 2, the plurality of light emitting diode elements 23 may be arranged in a line along the length direction of the fixed frame 10.

The light emitting diode element 23 may be installed on the printed circuit board 21. The printed circuit board 21 is formed to apply electricity to the light emitting diode element 23. The printed circuit board 21 may have a rod shape similar to the fixed frame 10, and the plurality of light emitting diode elements 23 may be arranged in a line along the length direction on the printed circuit board 21.

* At this time, the mounting jaw 12 may be formed inside the fixing frame 10, and the printed circuit board 21 may be installed in the fixing frame 10 with both ends mounted on the mounting jaw 12. have.

The light emitting diode element 23 may include a pair of electrode leads 231 and 232, and the pair of electrode leads 231 and 232 are arranged to be electrically insulated from each other. The pair of electrode leads 231 and 232 are fixed by the synthetic resin frame 235. The synthetic resin frame 235 forms a reflective cup 239, and the light emitting diode chip 236 is disposed inside the reflective cup 239. For example, the light emitting diode chip 236 may be fixed by an adhesive to the electrode lead 231 exposed in the reflecting cup 239, and some of the light emitted from the light emitting diode chip 236 may be reflected by the reflecting cup 239. Reflected on the inner surface of the) will proceed approximately forward. The reflective cup 239 may be filled with a transparent resin such as epoxy or silicon.

In this case, the light emitting diode chip 236 is electrically connected to the pair of electrode leads 231 and 232 by a pair of wires 237 and 238, respectively. The pair of electrode leads 231 and 232 are bonded to each other by the conductive adhesives 233 and 234 in an electrically connected state to the printed circuit board 21. As a result, an external power source may be applied to the light emitting diode chip 236 through the printed circuit board 21 and the conductive adhesives 233 and 234.

On the other hand, elements for converting an external power source into a suitable form and supplied to the printed circuit board 21 may be provided. For example, a bridge diode 103 for converting a polarity power source into a nonpolar power source and a connector 101 connecting the electrode part may be provided.

In addition, an external power supply unit 104 for receiving external power may be fastened to both sides of the fixed frame 10, and the external power supply unit 104 includes a pair of electrode terminals 101 exposed to the outside. can do.

The light diffusion cover 30 surrounding the front surface of the light emitting diode module 20 is fastened to the fixed frame 10.

The light diffusion cover 30 may be formed of a synthetic resin material such as polycarbonate having good light transmission and light diffusion effect, and may be formed of a material such as thermosetting resin or glass, if necessary. As shown in the figure, the light diffusing cover 30 may be formed in a shell shape having a circular shape in which one side is cut approximately, and the light diffusing cover 30 and the fixing frame 10 are combined to form a substantially circular shape. It is possible to achieve the cross-sectional shape of. The cross-sectional shape of the light diffusion cover 30 is not limited thereto, and may be variously changed, such as an ellipse or a polygon.

Protruding portions 14 and 15 formed to face each other may be formed on both outer surfaces of the fixing frame 10, and ends of the light diffusion cover 30 are inserted into a space formed between the protruding portions 14 and 15. The light diffusion cover 30 may be fastened to the fixed frame 10.

A phosphor layer 40 is provided that absorbs a portion of the light emitted from the LED chip 236 and emits a predetermined emission spectrum. The phosphor layer 40 is provided so as not to directly contact the LED chip 236.

The phosphor layer 40 includes a phosphor that absorbs a part of light emitted from the light emitting diode chip 236 and excites it. For example, the light emitting diode illumination device may be a lighting device that emits white light, wherein the light emitting diode chip 236 may be a blue light emitting diode chip that emits blue light, and the phosphor of the phosphor layer 40 is a light emitting diode. A portion of the blue light emitted by the chip 236 may be absorbed to emit a predetermined emission spectrum, and the light emitted by the LED chip 236 may be absorbed by the phosphor layer 40 and the light emitted to the outside instead of being absorbed by the phosphor. White light can be emitted by the combination of light emitted.

The phosphor layer 40 may be formed by containing a phosphor such as a resin such as epoxy, other plastic resin, or glass.

2 and 3, in this embodiment, the phosphor layer 40 may have the form of a plate, and the phosphor layer 40 in the form of a plate covers the entire surface of the light emitting diode module 20. It is installed on the fixed frame 10 so that. Accordingly, all the light emitted from the light emitting diode chip 236 of the light emitting diode module 20 passes through the phosphor layer 40, and then moves forward. In the process of passing light through the phosphor layer 40, a part of the light is emitted. Light is absorbed and excited by the phosphor of the phosphor layer 40.

For example, flat mounting portions 13 are provided at both sides of the front end of the fixed frame 10, and the phosphor layer 40 is provided on the mounting portion 13 by the plate-like phosphor layer 40. It is installed at (10). At this time, the mounting portion 13 of the fixing frame 10 is formed to protrude further forward than the front end of the light emitting diode module 20, the phosphor layer 40 as shown in Figure 3 the light emitting diode module 20 Is spaced from As a result, the phosphor contained in the phosphor layer 40 does not directly contact the LED chip 236. Accordingly, it is possible to prevent the phosphor from being directly exposed to the heat of the LED chip 236, thereby minimizing the degradation of the phosphor due to heat and various problems thereof.

On the other hand, the light emitting diode chip 236 is a nitride-based semiconductor including In may be a blue light emitting diode chip having a peak of the emission spectrum in the range of 440 ~ 480nm. For example, as a gallium nitride compound semiconductor (General Formula: In _i Ga _j Al _k N, where 0≤i, 0≤j, 0≤k, and i + j + k = 1), InGaN or various impurities are doped. GaN may be a variety of semiconductors.

In this case, the phosphor contained in the phosphor layer 40 is a phosphor capable of absorbing a part of the blue light emitted from the light emitting diode chip 236 and having a peak of 500 to 590 nm and emitting light emission spectrum gradually decreasing to at least 720 to 810 nm. Can be.

Specifically, the phosphor contained in the phosphor layer 40 is at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one selected from the group consisting of Al, Ga and In It may include a garnet-based phosphor containing an element, and activated with cerium.

Meanwhile, the phosphor contained in the phosphor layer 40 may be Y ₃ Al ₅ O ₁₂ : Ce or Gd ₃ In ₅ O ₁₂ : Ce.

On the other hand, the phosphor contained in the phosphor layer 40 contains at least one element selected from the group consisting of Sr and Ca, and at least one element selected from the group consisting of Al, Si, and N, And silicate-based phosphors activated with fume). For example, the phosphor may be (SrCa) AlSiN ₃ : Eu).

On the other hand, the phosphor contained in the phosphor layer 40 is SrO _X BaO _Z CaO and MgO ₂ (SiO ₂ ) _b M ₂ O ₃ (where 0≤x≤1, 0≤z≤1, 0≤b) It may be configured, and may include a silicate (Silicate) -based phosphor activated by Eu (Pigarium).

On the other hand, the phosphor contained in the phosphor layer 40 may be composed of Si _{6 - g} Al _g O _g N _{8- g} (where 0≤g≤3), silicate activated with Eu (paid fume) (Silicate ) May include a phosphor.

Meanwhile, the phosphor contained in the fluorescent resin layer 80 may be a phosphor having a Ca _r Eu _t (Si, Al) ₁₂ (O, N) ₁₂ (where 0 ≦ r ≦ 2 and 0 ≦ t ≦ 2) composition. .

On the other hand, as the phosphor, the general formula (Re _{1 - r S m r} ) ₃ (Al _{1 - s} Ga _s ) ₅ O ₁₂ : Ce (where 0≤r <1, 0≤s≤1, Re is Y, Gd Phosphors represented by at least one selected) can be used, and the same excellent characteristics as in the case of using the yttrium aluminum garnet-based phosphor can be obtained.

Further, in order to reduce temperature dependence of light emission characteristics of the light emission such as wavelength or light emission intensity, the phosphor represented by the general formula _{(Y 1 -pq- r Gd p Ce} q Sm r) 3 (Al 1 - s Ga s) 5 O 12 ( However, phosphors represented by 0 ≦ p ≦ 0.8, 0.003 ≦ q ≦ 0.2, 0.0003 ≦ r ≦ 0.08, and 0 ≦ s ≦ 1) may be used.

The phosphor may also include two or more yttrium-aluminum-garnet-based phosphors activated by cerium, each having a composition different from each other including Y and Al. As a result, a desired emission color can be emitted by adjusting the emission spectrum of the phosphor corresponding to the characteristics (light emission wavelength) of the light emitting element.

In addition, in order to set the emission wavelength to a predetermined value, the phosphors are each represented by the general formula (Re _{1-r S m r} ) ₀ (Al _1-s Ga _s ) ₅ O ₁₂ : Ce (where 0 ≦ r <1, 0 ≤ s ≤ 1, Re may be a phosphor represented by at least one selected from Y, Gd), and may include two or more phosphors having different compositions from each other.

In addition, the phosphor has a general formula Y ₃ in order to adjust the emission wavelength _{(Al 1 - s Ga s)} 5 O 12: The represented by Ce: a first phosphor represented by Ce, and the general formula Re ₃ Al ₅ O ₁₂ It may also contain two phosphors. Here, 0 ≦ s ≦ 1, and Re is at least one selected from Y, Gd, and La.

In addition, in order to adjust the light emission wavelength, each of the phosphors may include a first phosphor and a second phosphor in which yttrium is partially replaced by gadolinium (Gd) in the yttrium-aluminum-garnet-based phosphor, and the substitution amounts are different from each other. have. Further, the main peak of the emission spectrum of the light emitting diode element can be set within the range of 400 nm to 530 nm, and the main light emission wavelength of the phosphor can be set longer than the main peak wavelength of the light emitting diode element. As a result, the white light can be efficiently emitted.

In addition, the light emitting layer of the light emitting diode element includes a gallium nitride-based semiconductor containing In, and the phosphor is a yttrium-aluminum-garnet-based phosphor in which a part of Al is Ga, and Ga: Al is 1: 1 to 4: It may be substituted so that it becomes a ratio within the range of 6, and a part of Y may be substituted so that Y: Gd may become a ratio within a range of 4: 1 to 2: 3 by Gd. The absorption spectrum of the phosphor thus adjusted is very well matched with the wavelength of light emitted by the light emitting diode element having a gallium nitride based semiconductor including In as a light emitting layer, so that the conversion efficiency (luminescence efficiency) can be improved. In addition, the light generated by the mixture of the blue light of the light emitting diode element and the fluorescent light of the phosphor is a white color having good color rendering and can provide a very excellent light emitting device in this respect.

In addition, according to the embodiment of the present invention, in order to improve the luminous efficiency and extend the lifespan, the main peak of the light emission spectrum of the light emitting diode chip 236 is set within a short range of 440 to 480 nm, which is a relatively short wavelength in visible light, The main light emission wavelength of the phosphor of the phosphor layer 40 was set longer than the main peak wavelength of the light emitting diode chip 236. In this way, since the light converted by the phosphor is longer in wavelength than the light emitted from the light emitting diode chip 40, the light emitting diode element 236 is used by the light emitting diode element 236 even if the light converted by the phosphor or the like is irradiated onto the light emitting diode chip 40. FIG. It is not absorbed. This is because the energy of the converted light is smaller than the band cap energy of the light emitting diode chip 236.

4 to 8 are cross-sectional views of light emitting diode lighting apparatuses according to other embodiments of the present invention. According to other embodiments of the present invention, the phosphor layer may have various shapes and may be disposed at various positions. Hereinafter, other embodiments of the present invention will be described with reference to FIGS. 4 to 8. The same reference numerals are used for the same parts as in the above-described embodiment, and description of the overlapping parts will be omitted.

First, with reference to FIG. 4, protrusions 114 and 115 facing both sides of the rear side of the fixing frame 110 are provided, and an end of the light diffusion cover 130 is inserted into a space between the protrusions 114 and 115. do. At this time, the projection 131 is provided at the end of the light diffusion cover 130, the projection 131 is fitted in the space between the protrusions 114, 115 in a suppression fitting manner.

In addition, a pair of seating parts 112 facing each other are provided near the front end of the fixed frame 110, and the printed circuit board 21 of the light emitting diode module 23 is seated on the seating part 112.

And, as shown in Figure 4, the phosphor layer 140 is formed in the form of a cover in contact with the inner surface of the optical cover cover 130. That is, the phosphor layer 140 has a form of a circular shell in which one side having a predetermined thickness is cut and is in close contact with the inner surface of the light diffusion cover 130.

Meanwhile, referring to FIG. 5, according to another embodiment of the present invention, the phosphor layer 140 is integrally formed on the light diffusion cover 130. That is, it is formed of one member of the phosphor layer 140 and the light diffusion cover 130, which may be formed of an epoxy resin, a thermosetting resin, glass, etc. containing the phosphor and the diffusion agent.

Meanwhile, referring to FIG. 6, according to another embodiment of the present invention, the phosphor layer 240 is formed to be filled in the space between the light diffusion cover 130 and the light emitting diode module 20. In this case, the reflective cup 239 of the light emitting diode chip 236 may be filled with a transparent resin such as silicon or epoxy, thereby preventing the phosphor of the phosphor layer 240 from directly contacting the light emitting diode chip 236. .

On the other hand, referring to Figure 7, according to another embodiment of the present invention, the phosphor layer 340 is formed in a multi-stage shape of varying height, the rear end portion 341 facing each other the front end of the fixed frame 110 It is fixed to the seating surface formed in the. At this time, the light emitting diode chip 23 is formed to protrude slightly from the tip of the fixed frame 10.

Meanwhile, referring to FIG. 8, according to another embodiment of the present invention, the light diffusion cover 230 and the fixing frame are integrally formed instead of a separate fixing frame. That is, the light diffusion cover 230 simultaneously performs the function of the light diffusion cover and the function of the fixed frame described above. As shown in the figure, the light diffusion cover 230 may be formed to have a substantially circular cross section. In this case, the light diffusion cover 230 may be formed of a resin such as polycarbonate, or may be formed of an epoxy resin containing a light diffusing agent.

Meanwhile, according to another embodiment of the present invention, the phosphor layers 40, 140, 240, and 340 may include two or more phosphors having different compositions.

Furthermore, according to another embodiment of the present invention, the phosphor layers 40, 140, 240, and 340 containing phosphors may be provided, and the phosphors may also be contained in the light diffusion plates 30, 130, and 230. The phosphor contained in the phosphor layers 40, 140, 240, and 340 and the phosphor contained in the light diffusion covers 30, 130, and 230 may have different compositions. For example, the phosphors contained in the phosphor layers 40, 140, 240, and 340 are red phosphors having peaks of 580 to 700 nm, and the phosphors contained in the light diffusion covers 30, 130, and 230 are 500 to It may be a phosphor having a peak of 590 nm. Meanwhile, the phosphor contained in the phosphor layers 40, 140, 240, and 340 and the phosphor contained in the light diffusion covers 30, 130, and 230 may be opposite to each other.

While the present invention has been particularly shown and described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, And all changes and modifications to the scope of the invention.

10: fixed frame
20: light emitting diode module
30, 130, 230: light diffusion cover
40, 140, 240, 340: phosphor layer

Claims (7)

Fixed frame,
A light emitting diode module fastened to the fixed frame and having a plurality of light emitting diode elements each including a light emitting diode chip;
A light diffusion cover fastened to the fixing frame and surrounding the front surface of the light emitting diode module;
And a phosphor layer disposed so as not to directly contact the light emitting diode chip and absorbing a portion of the light emitted from the light emitting diode chip to emit a predetermined emission spectrum. In claim 1,
The phosphor layer is formed to have a plate shape covering the front of the light emitting diode module. In claim 1,
The phosphor layer is formed in the form of a cover in contact with the inner surface of the light diffusion cover. In claim 1,
The phosphor layer is formed to fill the space between the light diffusion cover and the light emitting diode module. In claim 1,
The phosphor layer is integrally formed on the light diffusion plate. In claim 1,
The light diffusing cover and the fixing frame are integrally formed with a light emitting diode lighting device. In any one of claims 1 to 6,
The phosphor layer is a light emitting diode illumination device is formed of a resin containing a phosphor, a plastic material, or glass.

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